JP4961374B2 - ポジ型レジスト組成物およびパターン形成方法 - Google Patents
ポジ型レジスト組成物およびパターン形成方法 Download PDFInfo
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- JP4961374B2 JP4961374B2 JP2008071482A JP2008071482A JP4961374B2 JP 4961374 B2 JP4961374 B2 JP 4961374B2 JP 2008071482 A JP2008071482 A JP 2008071482A JP 2008071482 A JP2008071482 A JP 2008071482A JP 4961374 B2 JP4961374 B2 JP 4961374B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
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| US12/058,055 US8877421B2 (en) | 2007-03-28 | 2008-03-28 | Positive resist composition and pattern-forming method |
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| KR101547356B1 (ko) | 2008-11-13 | 2015-08-25 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제 |
| JP5816505B2 (ja) * | 2011-09-27 | 2015-11-18 | 東京応化工業株式会社 | レジストパターン形成方法 |
| JP6261947B2 (ja) * | 2012-11-15 | 2018-01-17 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5572739B2 (ja) * | 2013-06-17 | 2014-08-13 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
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| JP3860053B2 (ja) * | 2002-03-11 | 2006-12-20 | 富士フイルムホールディングス株式会社 | ポジ型感光性組成物 |
| TWI310119B (en) * | 2003-02-26 | 2009-05-21 | Tokyo Ohka Kogyo Co Ltd | Silsequioxane resin, positive photoresist composition, resist laminar body and resist pattern formation method |
| JP4488174B2 (ja) * | 2004-02-05 | 2010-06-23 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4304093B2 (ja) * | 2004-02-19 | 2009-07-29 | 富士フイルム株式会社 | 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
| US8597867B2 (en) * | 2004-05-06 | 2013-12-03 | Jsr Corporation | Lactone copolymer and radiation-sensitive resin composition |
| JP4881686B2 (ja) * | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4691442B2 (ja) * | 2005-12-09 | 2011-06-01 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP5012073B2 (ja) * | 2006-02-15 | 2012-08-29 | 住友化学株式会社 | フォトレジスト組成物 |
| JP4912733B2 (ja) * | 2006-02-17 | 2012-04-11 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
| JP2007334278A (ja) * | 2006-05-18 | 2007-12-27 | Tokyo Ohka Kogyo Co Ltd | 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP4839253B2 (ja) * | 2007-03-28 | 2011-12-21 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
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