JP4953306B2 - 水素ガスセンサ製造方法 - Google Patents
水素ガスセンサ製造方法 Download PDFInfo
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- JP4953306B2 JP4953306B2 JP2007168899A JP2007168899A JP4953306B2 JP 4953306 B2 JP4953306 B2 JP 4953306B2 JP 2007168899 A JP2007168899 A JP 2007168899A JP 2007168899 A JP2007168899 A JP 2007168899A JP 4953306 B2 JP4953306 B2 JP 4953306B2
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- hydrogen gas
- gas sensor
- cnt
- catalyst metal
- hydrogen
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- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
以下、本発明の実施の形態1における水素ガスセンサと、水素ガスセンサにCNTを集積するCNT集積装置、水素ガスセンサ製造方法について説明をする。図1は本発明の実施の形態1における水素ガスセンサとCNT集積化装置の説明図、図2は本発明の実施の形態1における水素ガスセンサの液相酸化還元反応の状態を示す説明図、図3(a)は本発明の実施の形態1における水素ガスセンサの触媒金属粒子を析出させる前のSEM像写真、図3(b)は(a)の触媒金属粒子を析出させた後のSEM像写真、図4は本発明の実施の形態1における水素ガスセンサの還元反応処理を行ったCNTのEDX分析図、図5(a)は本発明の実施の形態1における水素ガスセンサのCNT上に触媒金属粒子を原子数比6%で析出させたときのSEM像写真、図5(b)は(a)の水素ガスセンサの電CNT上に触媒金属粒子を原子数比80%で析出させたときのSEM像写真である。
2a,2b マイクロ電極
3a,3b 電界集中部
4 絶縁基板
5 密閉チャンバ
6,22 電源
7 インピーダンス調整装置
8 CNT懸濁液
8a CNT
9a 導入路
9b 排出路
10 ポンプ
21 陽極
Claims (4)
- カーボンナノ材料を絶縁基板上に形成された一対の電極間で誘電泳動して架橋し、一旦乾燥後、電極材料よりイオン化傾向の小さな触媒金属の塩若しくは錯体の溶液に前記電極を浸漬し、析出する粒子状の触媒金属体によって前記カーボンナノ材料を修飾すると共に、前記電極材料と触媒金属の酸化還元反応を重畳して発生させ前記カーボンナノ材料の表面にこの酸化還元反応に由来する粒子状の触媒金属体を析出させることを特徴とする水素ガスセンサ製造方法。
- カーボンに対する前記触媒金属の原子数比を1%〜25%にすることを特徴とする請求項1記載の水素ガスセンサ製造方法。
- 絶縁基板上に形成された一対の電極間にカーボンナノ材料を誘電泳動して架橋し、一旦乾燥後、前記カーボンナノ材料の前記電極からの離脱力と物理吸着力を比較したとき該物理吸着力の方が大きい溶媒に対して、前記電極材料よりイオン化傾向の小さな触媒金属の塩若しくは錯体を溶解し、この溶液に前記電極を浸漬し、析出する粒子状の触媒金属体によって前記カーボンナノ材料を修飾すると共に、前記電極材料と触媒金属の酸化還元反応を重畳して発生させ前記カーボンナノ材料の表面にこの酸化還元反応に由来する粒子状の触媒金属体を析出させることを特徴とする水素ガスセンサ製造方法。
- 前記溶液中に前記一対の電極を浸漬して陰極とし、別に浸漬した陽極との間で直流電圧を印加して陰極酸素還元反応させることを特徴とする請求項1〜3の何れかに記載の水素ガスセンサ製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007168899A JP4953306B2 (ja) | 2007-06-27 | 2007-06-27 | 水素ガスセンサ製造方法 |
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JP2007168899A JP4953306B2 (ja) | 2007-06-27 | 2007-06-27 | 水素ガスセンサ製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009008476A JP2009008476A (ja) | 2009-01-15 |
JP4953306B2 true JP4953306B2 (ja) | 2012-06-13 |
Family
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JP2007168899A Expired - Fee Related JP4953306B2 (ja) | 2007-06-27 | 2007-06-27 | 水素ガスセンサ製造方法 |
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JP (1) | JP4953306B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305464B1 (ko) * | 2010-08-23 | 2013-09-06 | 충남대학교산학협력단 | 이온성 금속촉매가 도입된 탄소재를 이용한 고감도 가스센서 및 이의 제조방법 |
KR101309590B1 (ko) * | 2011-10-25 | 2013-09-17 | 한국표준과학연구원 | 수소가스농도 측정 시스템 |
JP6035087B2 (ja) * | 2012-09-06 | 2016-11-30 | セイコーインスツル株式会社 | ガスセンサ、ガス測定装置、及びガスセンサの製造方法 |
SG11201506096UA (en) * | 2013-01-11 | 2015-09-29 | Aqua Bank Co Ltd | Method for determining dissolved-hydrogen concentration |
CN103760196B (zh) * | 2014-02-19 | 2016-01-20 | 中国工程物理研究院化工材料研究所 | 一种水钠锰矿型二氧化锰纳米片氢气传感器及其制备方法 |
KR101765412B1 (ko) * | 2016-02-23 | 2017-08-04 | 연세대학교 산학협력단 | 수소 센서 및 이의 제조방법 |
KR20170114963A (ko) * | 2016-04-06 | 2017-10-16 | 울산과학기술원 | 수소가스센서 및 이의 제조방법 |
JP6782488B2 (ja) * | 2017-03-28 | 2020-11-11 | 学校法人加計学園 | ガスセンサ |
JP6786471B2 (ja) * | 2017-12-15 | 2020-11-18 | キヤノン株式会社 | 還元性ガスセンサ |
US11072531B2 (en) * | 2017-12-22 | 2021-07-27 | Palo Alto Research Center Incorporated | Annealed metal nano-particle decorated nanotubes |
JP7150467B2 (ja) * | 2018-05-14 | 2022-10-11 | キヤノン株式会社 | 還元性ガス検知材料および還元性ガス検知センサ |
US11686698B2 (en) | 2018-05-14 | 2023-06-27 | Canon Kabushiki Kaisha | Reducing gas detection material and reducing gas detection sensor |
JP7495691B2 (ja) | 2020-12-03 | 2024-06-05 | 宮城県 | ガス濃度測定方法及びガス濃度測定装置 |
CN118090837A (zh) * | 2024-04-23 | 2024-05-28 | 大连理工大学 | 一种室温氢气敏感立方体材料及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001044796A1 (en) * | 1999-12-15 | 2001-06-21 | Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
WO2003046536A1 (en) * | 2001-11-26 | 2003-06-05 | Sony International (Europe) Gmbh | The use of 1d semiconductor materials as chemical sensing materials, produced and operated close to room temperature |
JP3924472B2 (ja) * | 2002-02-05 | 2007-06-06 | 株式会社ジェイテクト | カーボンナノチューブを用いたセンサ |
JP2004325142A (ja) * | 2003-04-22 | 2004-11-18 | Matsushita Electric Works Ltd | ガスセンサ |
JP4338615B2 (ja) * | 2004-10-12 | 2009-10-07 | 富士通株式会社 | 気体検知装置 |
JP4714825B2 (ja) * | 2005-03-01 | 2011-06-29 | 国立大学法人東北大学 | 金属薄膜を用いた溶存水素センサ |
JP4825968B2 (ja) * | 2005-05-26 | 2011-11-30 | 国立大学法人九州大学 | カーボンナノチューブセンサ及びその製造方法 |
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