JP4935870B2 - IC chip mounting method - Google Patents

IC chip mounting method Download PDF

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JP4935870B2
JP4935870B2 JP2009184508A JP2009184508A JP4935870B2 JP 4935870 B2 JP4935870 B2 JP 4935870B2 JP 2009184508 A JP2009184508 A JP 2009184508A JP 2009184508 A JP2009184508 A JP 2009184508A JP 4935870 B2 JP4935870 B2 JP 4935870B2
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film
chip
bumps
wiring board
printed wiring
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JP2009272645A (en
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敏広 三宅
宏司 近藤
成男 沼澤
克己 中村
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

Description

この発明はＩＣチップの実装方法に関するものである。   The present invention relates to an IC chip mounting method.

従来、プリント配線板（ＰＷＢ）にＩＣチップをフリップチップ法で搭載していたが、接合部の疲労寿命を向上して信頼性を確保するために、チップの下にアンダーフィルと呼ばれる樹脂を注入してきた。これに代わる手法として、基板とチップとの間に樹脂フィルムを挟んで接合を行うことにより基板・チップ間を樹脂で封止する技術がある（特許文献１、特許文献２等）。しかし、電極間の接合強度を高めるとともに、チップとプリント配線板との間の封止性（樹脂の接着性）を向上したいという要求がある。   Conventionally, an IC chip was mounted on a printed wiring board (PWB) by the flip chip method, but a resin called underfill was injected under the chip to improve the fatigue life of the joint and ensure reliability. I have done it. As an alternative method, there is a technique in which a substrate and a chip are sealed with a resin by bonding a resin film between the substrate and the chip (Patent Document 1, Patent Document 2, etc.). However, there is a demand for enhancing the bonding strength between the electrodes and improving the sealing property (resin adhesion) between the chip and the printed wiring board.

特開平９−６４２３７号公報Japanese Patent Laid-Open No. 9-64237 特許第２８１２２３８号公報Japanese Patent No. 2812238

そこで、この発明の目的は、より信頼性の高いＩＣチップの実装方法を提供することにある。   An object of the present invention is to provide a more reliable IC chip mounting method.

請求項１に記載のように、バンプを有するプリント配線板とバンプを有するＩＣチップとの間に、バンプに対応する位置に貫通孔を設けた熱可塑性樹脂フィルムを配置した後に、加熱・加圧して、プリント配線板のバンプとＩＣチップのバンプを接合するとともにフィルムを溶融させてＩＣチップとプリント配線板との間を樹脂封止する際に、プリント配線板のバンプの表面に、Ｃ−Ｈ結合解離エネルギーが９００ｋＪ／ｍｏｌよりも小さい炭化水素化合物であるジヒドロアントラセンよりなる膜を配置し、この膜を両バンプ間に介在させた状態で加熱・加圧してバンプの接合および樹脂封止を行う。すると、プリント配線板の電極部に配したＣ−Ｈ結合解離エネルギーの小さい炭化水素化合物により、電極表面の酸化膜を還元して活性な金属表面を界面に形成させながら接合することができ、高い信頼性が得られる。 As described in claim 1, after placing a thermoplastic resin film having through holes at positions corresponding to the bumps between the printed wiring board having bumps and the IC chip having bumps, heating and pressurizing are performed. When the bump of the printed wiring board and the bump of the IC chip are bonded and the film is melted to seal the space between the IC chip and the printed wiring board, the C-H is applied to the surface of the bump of the printed wiring board. bond dissociation energy is disposed a smaller hydrocarbon compounds der distearate Hidoroantorase emissions by Li Cheng film than 900kJ / mol, bonding and bump heated and pressed while interposing the film between two bumps Resin sealing is performed. Then, a hydrocarbon compound having a small C—H bond dissociation energy disposed on the electrode portion of the printed wiring board can be bonded while reducing the oxide film on the electrode surface and forming an active metal surface at the interface, which is high. Reliability is obtained.

つまり、プリント配線板のバンプとＩＣチップのバンプの間に、Ｃ−Ｈ結合解離エネルギーが９００ｋＪ／ｍｏｌよりも小さい炭化水素化合物であるジヒドロアントラセンを介在させ、炭化水素化合物を加熱することにより、炭化水素化合物を熱分解させて炭化水素化合物から水素が分離されたラジカルな状態とし、このラジカルな状態とされた炭化水素化合物によって金属の表面に形成された酸化膜を還元しつつ、接合が行われる。 In other words, between the bump and the IC chip bumps printed wiring board, C-H bond dissociation energy by interposing a small hydrocarbon compound der distearate Hidoroantorase emissions than 900kJ / mol, to heat the hydrocarbon compound In this way, the hydrocarbon compound is thermally decomposed into a radical state in which hydrogen is separated from the hydrocarbon compound, and the oxide film formed on the metal surface by the hydrocarbon compound in the radical state is reduced, Joining is performed.

ここで、Ｃ−Ｈ結合解離エネルギーΔＨとは、図７に示すように、炭化水素化合物がそれぞれ電子を保有しつつアルキル基と水素とに解離するために必要なエネルギーであり、それぞれの物質の分子軌道計算から算出されるものである。換言すれば、それぞれの物質のＣ−Ｈ結合解離エネルギーΔＨは、炭化水素化合物のアルキル基と水素とへの解離のしやすさを示しており、このエネルギーの小さい物質ほど、アルキル基と水素とに解離しや
すい。 Here, as shown in FIG. 7, the C—H bond dissociation energy ΔH is the energy required for the hydrocarbon compound to dissociate into an alkyl group and hydrogen while holding an electron, respectively. It is calculated from molecular orbital calculation. In other words, the C—H bond dissociation energy ΔH of each substance indicates the ease of dissociation of the hydrocarbon compound into an alkyl group and hydrogen. Easily dissociates.

そして、図７において、それぞれ電子を保有しつつアルキル基と水素に解離すると、そのアルキル基がラジカルな状態となり、酸化銅等から酸素を奪って、すなわち酸化銅を還元して、自身はアルカン酸化物となって安定する。このように、炭化水素化合物として、熱分解により還元作用を発揮するものを用いることにより、十分な接合強度が得られる。   Then, in FIG. 7, when each of them holds an electron and dissociates into an alkyl group and hydrogen, the alkyl group becomes a radical state, deprives oxygen from copper oxide or the like, that is, reduces copper oxide, and self-oxidizes alkane. Stabilizes as a thing. Thus, sufficient bonding strength can be obtained by using a hydrocarbon compound that exhibits a reducing action by thermal decomposition.

さらに、上述の炭化水素化合物は、加圧・加熱により熱可塑性樹脂フィルムの表層部に浸透し、その表層部の弾性率を低下させる性質を有する。このため、熱可塑性樹脂フィルムのプリント配線板側の面全体を炭化水素化合物の膜に当接させれば、熱可塑性樹脂フィルムとプリント配線板との接着性を向上できる。   Furthermore, the above-mentioned hydrocarbon compound has a property of penetrating into the surface layer portion of the thermoplastic resin film by pressurization and heating, and reducing the elastic modulus of the surface layer portion. For this reason, if the whole surface by the side of the printed wiring board of a thermoplastic resin film is contact | abutted to the film | membrane of a hydrocarbon compound, the adhesiveness of a thermoplastic resin film and a printed wiring board can be improved.

実施の形態におけるＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of IC chip in embodiment. ＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of IC chip. ＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of IC chip. 比較例におけるＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of the IC chip in a comparative example. ＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of IC chip. ＩＣチップの実装方法の説明図。Explanatory drawing of the mounting method of IC chip. アルカンによるＣｕＯ還元反応を説明するための図。The figure for demonstrating the CuO reduction | restoration reaction by alkane. Ｃ−Ｈ結合解離エネルギーと還元速度定数の関係を示す図。The figure which shows the relationship between CH bond dissociation energy and a reduction rate constant. ＣｕＯ還元反応速度の測定方法を説明するための図。The figure for demonstrating the measuring method of CuO reduction reaction rate. Ｃ−Ｈ結合解離エネルギーと接続面積率の関係を示す図。The figure which shows the relationship between CH bond dissociation energy and a connection area ratio. 接着強度の測定結果を示す図。The figure which shows the measurement result of adhesive strength.

（実施の形態）
以下、この発明を具体化した実施の形態を図面に従って説明する。
図１〜図３には、本実施形態におけるＩＣチップの実装工程を示す。 (Embodiment)
Embodiments of the present invention will be described below with reference to the drawings.
1 to 3 show an IC chip mounting process in the present embodiment.

図１に示すように、プリント配線板（ＰＷＢ）１０において、絶縁基板１１には導体パターン１２が形成されている。導体パターン１２でのＩＣチップとの接合部（ＰＷＢ端子部）においてはその上面に銅めっきによる突起（厚さ１０〜５０μｍ）１３が形成され、その上部にはニッケルめっき（厚さ１〜５μｍ）１４と金めっき（厚さ１〜５μｍ）１５が形成されている。このようにプリント配線板１０のバンプとして金バンプを用いている。さらに本例では、金バンプ部を含めた配線板上面には、Ｃ−Ｈ結合解離エネルギーが９５０ｋＪ／ｍｏｌ以下の炭化水素化合物よりなる膜１６が形成されている。具体的には、ジシクロペンタジエン、テトラメチルペンタデカン等よりなる膜を用いる。   As shown in FIG. 1, in a printed wiring board (PWB) 10, a conductive pattern 12 is formed on an insulating substrate 11. In the joint portion (PWB terminal portion) of the conductor pattern 12 with the IC chip, a protrusion (thickness 10 to 50 μm) 13 by copper plating is formed on the upper surface, and nickel plating (thickness 1 to 5 μm) is formed on the upper portion. 14 and gold plating (thickness 1 to 5 μm) 15 are formed. Thus, gold bumps are used as the bumps of the printed wiring board 10. Furthermore, in this example, a film 16 made of a hydrocarbon compound having a C—H bond dissociation energy of 950 kJ / mol or less is formed on the upper surface of the wiring board including the gold bump portion. Specifically, a film made of dicyclopentadiene, tetramethylpentadecane, or the like is used.

また、ＩＣチップ２０において、シリコンチップ２１には金属突起２２が形成され、金属突起２２は、銅（あるいはアルミまたは金）よりなる膜２３にて被覆されている。このようにしてバンプが形成されている。   In the IC chip 20, a metal protrusion 22 is formed on the silicon chip 21, and the metal protrusion 22 is covered with a film 23 made of copper (or aluminum or gold). In this way, bumps are formed.

一方、熱可塑性樹脂フィルム３０としてＰＥＥＫ−ＰＥＩフィルム（ポリエーテルエーテルケトンとポリエーテルイミドの混合物）を用いており、プリント配線板１０のバンプ１３〜１５およびＩＣチップ２０のバンプ２２，２３に対応する位置に貫通孔３１が形成されている。   On the other hand, a PEEK-PEI film (a mixture of polyetheretherketone and polyetherimide) is used as the thermoplastic resin film 30 and corresponds to the bumps 13 to 15 of the printed wiring board 10 and the bumps 22 and 23 of the IC chip 20. A through hole 31 is formed at the position.

そして、図２に示すように、プリント配線板（ＰＷＢ）１０の上にＰＥＥＫ−ＰＥＩフィルム３０を介してＩＣチップ２０を位置合わせして重ねる。つまり、プリント配線板１
０のバンプとＰＥＥＫ−ＰＥＩフィルム３０の穴位置とＩＣチップ２０のバンプとを一致させて重ねる。 Then, as shown in FIG. 2, the IC chip 20 is aligned and overlapped on the printed wiring board (PWB) 10 via the PEEK-PEI film 30. That is, the printed wiring board 1
The 0 bump, the hole position of the PEEK-PEI film 30 and the bump of the IC chip 20 are made to coincide with each other.

この状態で、チップ表面に加熱ツール（ヒータヘッドＨ）を押し当て、プリント配線板１０とＰＥＥＫ−ＰＥＩフィルム３０の界面の温度が３００〜３３０℃になるように加熱・加圧する（圧力０．０５〜０．５ＭＰａ、１〜１５秒）。このように熱圧着すると、図３に示すように、ＩＣチップ２０の電極とプリント配線板１０の金バンプとが接合するとともに、ＰＥＥＫ−ＰＥＩフィルム３０が溶けて接着する。つまり、図２でプリント配線板１０とＩＣチップ２０との間に熱可塑性樹脂フィルム３０を配置した後に、加熱・加圧して、プリント配線板１０のバンプ１３〜１５とＩＣチップ２０のバンプ２２，２３を接合するとともにフィルム３０を溶融してＩＣチップ２０とプリント配線板１０との間を樹脂４０（図３参照）で封止する。   In this state, a heating tool (heater head H) is pressed against the chip surface and heated and pressurized so that the temperature at the interface between the printed wiring board 10 and the PEEK-PEI film 30 is 300 to 330 ° C. (pressure 0.05) -0.5 MPa, 1-15 seconds). When thermocompression bonding is performed in this manner, as shown in FIG. 3, the electrodes of the IC chip 20 and the gold bumps of the printed wiring board 10 are bonded, and the PEEK-PEI film 30 is melted and bonded. That is, after the thermoplastic resin film 30 is disposed between the printed wiring board 10 and the IC chip 20 in FIG. 2, heating and pressurization are performed, so that the bumps 13 to 15 of the printed wiring board 10 and the bumps 22 of the IC chip 20. 23 and the film 30 are melted to seal the gap between the IC chip 20 and the printed wiring board 10 with a resin 40 (see FIG. 3).

ここで、プリント配線板１０の金バンプ部に配したＣ−Ｈ結合解離エネルギーの小さい炭化水素化合物（膜１６）が介在されていることにより、電極表面の酸化膜を還元して活性な金属表面を界面に形成させながら接合することができる。   Here, a hydrocarbon compound (film 16) having a small C—H bond dissociation energy disposed on the gold bump portion of the printed wiring board 10 is interposed, so that the oxide film on the electrode surface is reduced and the active metal surface is reduced. Can be bonded while forming at the interface.

詳しくは、図７に示すように、炭化水素化合物（膜１６）を加熱することにより、炭化水素化合物が熱分解されて、炭化水素化合物から水素が分離されたラジカルな状態となり、このラジカルな状態とされた炭化水素化合物によって金属の表面に形成された酸化膜を還元しつつ、金属（Ｃｕ等）の溶融によって両基板の接続部を構成する金属が接合される。つまり、酸化膜の還元によって酸化膜が破れて清浄な金属表面が露出し、濡れ性が良い状態で、図２の配線板１０側のＡｕ膜１５の表面とＩＣチップ２０側のＣｕ膜２３の表面が接触し、さらに、Ｃｕ膜２３の溶解に伴い、図３に示すように、ＩＣチップ２０側のＣｕ膜２３と配線板１０側のＡｕ膜１５とが接合される。   Specifically, as shown in FIG. 7, by heating the hydrocarbon compound (film 16), the hydrocarbon compound is thermally decomposed into a radical state in which hydrogen is separated from the hydrocarbon compound, and this radical state. While the oxide film formed on the surface of the metal is reduced by the hydrocarbon compound, the metal constituting the connection portion of both substrates is joined by melting of the metal (Cu or the like). That is, the oxide film is broken by the reduction of the oxide film, and a clean metal surface is exposed, and the wettability is good, and the surface of the Au film 15 on the wiring board 10 side and the Cu film 23 on the IC chip 20 side in FIG. As shown in FIG. 3, the Cu film 23 on the IC chip 20 side and the Au film 15 on the wiring board 10 side are bonded together as the surface comes into contact with the Cu film 23 and melts.

このように本実施形態では、炭化水素化合物の膜１６を加熱することにより、Ｃｕ膜２３もしくはＡｕ膜１５表面の酸化膜を炭化水素化合物で還元しつつ、Ｃｕ膜２３を溶融することによって両バンプを接合する。   Thus, in this embodiment, both bumps are obtained by heating the hydrocarbon compound film 16 to melt the Cu film 23 while reducing the oxide film on the surface of the Cu film 23 or the Au film 15 with the hydrocarbon compound. Join.

接合原理について本発明者らは種々の実験を行ったので、それを以下に説明する。
（i ）．各種の炭化水素化合物溶液中に酸化銅を浸して加熱したときの水素及び水の発生量を検出した。この結果、水素の発生は確認されたが、水は検出されなかった。このため、酸化銅の還元は、水素によってなされたものではないことが確認された。 The inventors have conducted various experiments on the bonding principle, which will be described below.
(I). The amount of hydrogen and water generated when copper oxide was immersed in various hydrocarbon compound solutions and heated was detected. As a result, generation of hydrogen was confirmed, but water was not detected. For this reason, it was confirmed that reduction of copper oxide was not performed by hydrogen.

（ii）．各種の炭化水素化合物溶液中に酸化銅を浸して加熱したときの反応生成物を分析した。その結果、酸化された炭化水素化合物の存在が確認された（例えば、シクロオクタンの場合、シクロオクタノン及びシクロオクタノールの存在が確認された）。これにより、炭化水素化合物自身が酸化銅を還元している可能性があると考えた。   (Ii). Reaction products when copper oxide was immersed in various hydrocarbon compound solutions and heated were analyzed. As a result, the presence of an oxidized hydrocarbon compound was confirmed (for example, in the case of cyclooctane, the presence of cyclooctanone and cyclooctanol was confirmed). Thereby, it was considered that the hydrocarbon compound itself may be reducing copper oxide.

（iii ）．この（ii）の推論の真偽を確認するため、各種炭化水素化合物のＣ−Ｈ結合解離エネルギーと還元速度定数との関係を求めた。その結果を図８に示す。図８において横軸にＣ−Ｈ結合解離エネルギーΔＨをとり、縦軸に還元速度定数をとり、サンプルとして、ジシクロペンタジエンとトリフェニルメタンとシクロオクタンとテトラメチルペンタデカンとエイコサンを用いた。ここで、還元速度定数とは、図９に示すように試料中に基板（銅端子を酸化済のもの）を入れ３００℃で所定時間保持した際における銅表面の酸素を波長分散型Ｘ線分光分析法により定量（還元状態の定量）を行い、次式により求めたものである。   (Iii). In order to confirm the truth of the inference of (ii), the relationship between the C—H bond dissociation energy and the reduction rate constant of various hydrocarbon compounds was determined. The result is shown in FIG. In FIG. 8, the horizontal axis represents the C—H bond dissociation energy ΔH, the vertical axis represents the reduction rate constant, and dicyclopentadiene, triphenylmethane, cyclooctane, tetramethylpentadecane, and eicosane were used as samples. Here, as shown in FIG. 9, the reduction rate constant is the wavelength dispersive X-ray spectroscopy of oxygen on the copper surface when a substrate (with the copper terminal oxidized) is placed in a sample and held at 300 ° C. for a predetermined time. Quantification (reduction state quantification) is performed by an analytical method, and is obtained by the following formula.

還元速度定数ｋ＝（１−Ｘ／Ｘ１）／（ｔ・Ｘ）
ただし、Ｘ１；初期酸化状態でのＸ線カウント数
Ｘ；時間が経過した段階でのＸ線カウント数
ｔ；加熱時間（秒）
この結果、図８に示すように、Ｃ−Ｈ結合解離エネルギーが小さくなるほど、還元速度が上昇する関係があることが確認された。このため、ラジカルな状態となった炭化水素化合物によって酸化銅等が還元されていることが確認された。 Reduction rate constant k = (1−X / X1) / (t · X)
X1: X-ray count in the initial oxidation state
X: Number of X-ray counts when time has elapsed
t: heating time (seconds)
As a result, as shown in FIG. 8, it was confirmed that there is a relationship in which the reduction rate increases as the C—H bond dissociation energy decreases. For this reason, it was confirmed that the copper oxide etc. were reduced with the hydrocarbon compound which became the radical state.

（iv）．Ｃ−Ｈ結合解離エネルギーが比較的小さい各種物質を用いて、銅端子とハンダ被覆端子との接合を行ったところ、図１０に示すように、Ｃ−Ｈ結合解離エネルギーが９５０ｋＪ／ｍｏｌ以下の炭化水素化合物については、従来のフラックスと同等の接続面積率が得られ、十分な接続強度を確保できた（Ｃ−Ｈ結合解離エネルギーが小さいほど接続特性が良好である）。詳しくは、図１０において横軸にＣ−Ｈ結合解離エネルギーΔＨをとり、縦軸に接続面積率をとり、サンプルとして、ジヒドロアントラセンとジシクロペンタジエンとシクロオクタンとテトラメチルペンタデカンとエイコサンを用いた。ここで、接続面積率とは、長方形の接合部位における当該部位の短辺により正方形の観察窓を作り（想定し）、長方形の接合部位での最も接合が不良となっている領域に前述の観察窓を持っていき、この窓の内部における全面積に対する実際に接合が行われた面積の比率を求めたものである。その結果、フラックスを用いた場合の接続面積率である「０．７」以上とするためにはＣ−Ｈ結合解離エネルギーが約９５０ｋＪ／ｍｏｌ以下の物質を用いればよいことが分かった。   (Iv). When a copper terminal and a solder-coated terminal were joined using various substances having a relatively low C—H bond dissociation energy, as shown in FIG. 10, carbonization with a C—H bond dissociation energy of 950 kJ / mol or less was performed. About a hydrogen compound, the connection area ratio equivalent to the conventional flux was obtained, and sufficient connection strength was ensured (The connection characteristic is so favorable that CH bond dissociation energy is small). Specifically, in FIG. 10, the horizontal axis represents C—H bond dissociation energy ΔH, the vertical axis represents the connection area ratio, and dihydroanthracene, dicyclopentadiene, cyclooctane, tetramethylpentadecane, and eicosane were used as samples. Here, the connection area ratio refers to the above-mentioned observation in the region where the rectangular junction part has the poorest junction at the rectangular junction part (assuming that a square observation window is created). Taking the window, the ratio of the area where bonding was actually performed to the total area inside the window was obtained. As a result, it was found that a substance having a C—H bond dissociation energy of about 950 kJ / mol or less may be used in order to obtain a connection area ratio of “0.7” or more when using a flux.

以上のように、プリント配線板１０のバンプ１３〜１５の表面に、Ｃ−Ｈ結合解離エネルギーが９５０ｋＪ／ｍｏｌ以下の炭化水素化合物よりなる膜１６を配置し、この膜１６を両バンプ間に介在させた状態で加熱・加圧してバンプの接合および樹脂封止を行うようにした。よって、プリント配線板１０の電極部に配したＣ−Ｈ結合解離エネルギーの小さい炭化水素化合物により、電極表面の酸化膜を還元して活性な金属表面を界面に形成させながら接合することができ、高い信頼性が得られる。   As described above, the film 16 made of a hydrocarbon compound having a C—H bond dissociation energy of 950 kJ / mol or less is disposed on the surface of the bumps 13 to 15 of the printed wiring board 10, and this film 16 is interposed between both bumps. In such a state, the bumps were bonded and the resin was sealed by heating and pressing. Therefore, by using a hydrocarbon compound having a small C—H bond dissociation energy disposed on the electrode portion of the printed wiring board 10, it is possible to bond while reducing the oxide film on the electrode surface and forming an active metal surface at the interface, High reliability is obtained.

さらに、上述の炭化水素化合物（１６）は、加圧・加熱により熱可塑性樹脂フィルム３０の表層部に浸透し、その表層部の弾性率を低下させる性質を有するため、熱可塑性樹脂フィルム３０のプリント配線板１０側の面全体を炭化水素化合物の膜１６に当接させることにより、熱可塑性樹脂フィルム３０とプリント配線板１０との接着性を向上させることができる。
（比較例）
次に、上記実施の形態の比較例を図面に従って説明する。図４〜図６には、本比較例におけるＩＣチップの実装工程を示す。 Furthermore, since the above-mentioned hydrocarbon compound (16) has the property of penetrating into the surface layer portion of the thermoplastic resin film 30 by pressurization and heating and reducing the elastic modulus of the surface layer portion, the printing of the thermoplastic resin film 30 is performed. Adhesion between the thermoplastic resin film 30 and the printed wiring board 10 can be improved by bringing the entire surface of the wiring board 10 into contact with the hydrocarbon compound film 16.
(Comparative example)
Next, a comparative example of the above embodiment will be described with reference to the drawings. 4 to 6 show an IC chip mounting process in this comparative example.

図４に示すように、プリント配線板（ＰＷＢ）５０において、絶縁基板５１には導体パターン５２が形成されている。導体パターン５２でのＩＣチップとの接合部（ＰＷＢ端子部）においてはその上面に銅めっきによる突起（厚さ１０〜５０μｍ）５３が形成され、その上部にはハンダめっき（厚さ２〜１０μｍ）５４が形成されている。このようにプリント配線板１０のバンプとしてハンダバンプを用いている。   As shown in FIG. 4, in a printed wiring board (PWB) 50, a conductive pattern 52 is formed on an insulating substrate 51. At the joint portion (PWB terminal portion) of the conductor pattern 52 with the IC chip, a protrusion (thickness 10 to 50 μm) 53 is formed on the upper surface thereof, and solder plating (thickness 2 to 10 μm) is formed thereon. 54 is formed. Thus, solder bumps are used as the bumps of the printed wiring board 10.

また、ＩＣチップ６０において、シリコンチップ６１には金属突起６２が形成され、金属突起６２は、金よりなる膜６３にて被覆されている。このようにしてバンプが形成されている。   In the IC chip 60, a metal protrusion 62 is formed on the silicon chip 61, and the metal protrusion 62 is covered with a film 63 made of gold. In this way, bumps are formed.

一方、熱可塑性樹脂フィルム７０としてＰＥＥＫ−ＰＥＩフィルム（ポリエーテルエーテルケトンとポリエーテルイミドの混合物）を用いており、両面にはアルカン類よりなる膜７１がコーティングされている。膜７１の材料としてのアルカン類は、エイコサン、テ
トラデカンを用いる。この熱可塑性樹脂フィルム７０および膜７１においてプリント配線板５０のバンプ５３，５４およびＩＣチップ６０のバンプ６２，６３に対応する位置に貫通孔７２が形成されている。 On the other hand, a PEEK-PEI film (a mixture of polyetheretherketone and polyetherimide) is used as the thermoplastic resin film 70, and a film 71 made of alkanes is coated on both surfaces. As the alkanes as the material of the film 71, eicosane and tetradecane are used. Through holes 72 are formed at positions corresponding to the bumps 53 and 54 of the printed wiring board 50 and the bumps 62 and 63 of the IC chip 60 in the thermoplastic resin film 70 and the film 71.

そして、図５に示すように、プリント配線板（ＰＷＢ）５０の上に熱可塑性樹脂フィルム７０を介してＩＣチップ６０を位置させる。このとき、プリント配線板５０のバンプと熱可塑性樹脂フィルム７０の穴位置とＩＣチップ６０のバンプとを一致させて重ねる。   Then, as shown in FIG. 5, the IC chip 60 is positioned on the printed wiring board (PWB) 50 via the thermoplastic resin film 70. At this time, the bumps of the printed wiring board 50, the hole positions of the thermoplastic resin film 70, and the bumps of the IC chip 60 are made to coincide with each other.

この状態で、チップ表面に加熱ツール（ヒータヘッドＨ）を押し当て、プリント配線板５０と熱可塑性樹脂フィルム７０の界面の温度が３００〜３３０℃になるように加熱・加圧する（圧力０．０５〜０．５ＭＰａ、１〜１５秒）。このように熱圧着すると、図６に示すように、ＩＣチップ６０の電極とプリント配線板５０のハンダバンプとが接合するとともに、熱可塑性樹脂フィルム７０が溶けて接着する。つまり、図５でプリント配線板５０とＩＣチップ６０との間に熱可塑性樹脂フィルム７０を配置した後に、加熱・加圧して、プリント配線板５０のバンプ５３，５４とＩＣチップ６０のバンプ６２，６３を接合するとともにフィルム７０を溶融してＩＣチップ６０とプリント配線板５０との間を樹脂８０（図６参照）で封止する。   In this state, a heating tool (heater head H) is pressed against the chip surface and heated and pressurized so that the temperature at the interface between the printed wiring board 50 and the thermoplastic resin film 70 is 300 to 330 ° C. (pressure 0.05) -0.5 MPa, 1-15 seconds). When thermocompression bonding is performed in this manner, the electrodes of the IC chip 60 and the solder bumps of the printed wiring board 50 are joined and the thermoplastic resin film 70 is melted and bonded as shown in FIG. That is, in FIG. 5, after the thermoplastic resin film 70 is disposed between the printed wiring board 50 and the IC chip 60, the bumps 53 and 54 of the printed wiring board 50 and the bumps 62 of the IC chip 60 are heated and pressed. 63 is joined and the film 70 is melted to seal between the IC chip 60 and the printed wiring board 50 with a resin 80 (see FIG. 6).

ここで、ＰＥＥＫ−ＰＥＩフィルム７０の両面には、アルカン類（エイコサン、テトラデカン等）よりなる膜７１を介在させているので、ＰＥＥＫ−ＰＥＩとの界面で、アルカン類がＰＥＥＫ−ＰＥＩに浸透して弾性率が下がることにより、接着力が向上する。   Here, since the film 71 made of alkanes (eicosane, tetradecane, etc.) is interposed on both sides of the PEEK-PEI film 70, the alkanes penetrate into the PEEK-PEI at the interface with the PEEK-PEI. Adhesive force improves because the elastic modulus decreases.

以下、実験を行ったので、その結果について説明する。
図１１には、接着界面温度を変えていったときの接着強度の測定結果を示す。
サンプルには、アルカン膜（Ｃ14Ｈ30）を用いたものと、用いなかったものを使用している。 Hereinafter, since the experiment was performed, the result will be described.
FIG. 11 shows the measurement results of the adhesive strength when the adhesive interface temperature is changed.
Samples with and without an alkane membrane (C 14 H 30 ) are used.

この図１１から、２７０℃で接着する場合には、アルカン膜を用いることにより、１．５Ｎ／ｍｍの接着強度を得ることができることが分かる。換言すると、同じ接着強度を得る場合には、より低い温度での加熱でよいことになる。具体的には、図１１において縦軸の接着強度を１．５Ｎ／ｍｍとしたい場合において、アルカン膜を用いない場合には約３００℃に加熱する必要があるが、アルカン膜を用いると約２７０℃に加熱するだけでよいことになる。   From FIG. 11, it can be seen that, when bonding is performed at 270 ° C., an adhesive strength of 1.5 N / mm can be obtained by using an alkane film. In other words, in order to obtain the same adhesive strength, heating at a lower temperature is sufficient. Specifically, in the case where it is desired to set the adhesive strength on the vertical axis in FIG. 11 to 1.5 N / mm, it is necessary to heat to about 300 ° C. when the alkane film is not used, but when the alkane film is used, about 270 is used. All you need to do is heat to ° C.

以上のように、熱可塑性樹脂フィルム７０の両面にアルカン類よりなる膜７１を配置し、この膜７１をチップ・配線板間に介在させた状態で加熱・加圧してバンプの接合および樹脂封止を行うようにした。よって、フィルム７０の表面はアルカン類を介在させているので、ＰＥＥＫ−ＰＥＩとの界面で、アルカン類がＰＥＥＫ−ＰＥＩに浸透して弾性率が下がることにより、接着力が向上し、高い信頼性が得られる。   As described above, the film 71 made of alkanes is disposed on both surfaces of the thermoplastic resin film 70, and this film 71 is heated and pressed in a state of being interposed between the chip and the wiring board to bond the bumps and seal the resin. To do. Therefore, since the surface of the film 70 contains alkanes, the alkanes penetrate into the PEEK-PEI at the interface with the PEEK-PEI and the elastic modulus is lowered, thereby improving the adhesive force and high reliability. Is obtained.

１０…プリント配線板、１１…絶縁基板、１２…導体パターン、１３…突起、１４…ニッケルめっき、１５…金めっき、１６…炭化水素化合物よりなる膜、２０…ＩＣチップ、２１…シリコンチップ、２２…金属突起、２３…銅よりなる膜、３０…樹脂フィルム、３１…貫通孔、５０…プリント配線板、５１…絶縁基板、５２…導体パターン、５３…突起、５４…ハンダめっき、６０…ＩＣチップ、６１…シリコンチップ、６２…金属突起、６３…金よりなる膜、７０…熱可塑性樹脂フィルム、７１…アルカン類よりなる膜、７２…貫通孔。   DESCRIPTION OF SYMBOLS 10 ... Printed wiring board, 11 ... Insulating substrate, 12 ... Conductor pattern, 13 ... Protrusion, 14 ... Nickel plating, 15 ... Gold plating, 16 ... Film | membrane consisting of a hydrocarbon compound, 20 ... IC chip, 21 ... Silicon chip, 22 ... Metal projection, 23 ... Copper film, 30 ... Resin film, 31 ... Through hole, 50 ... Printed wiring board, 51 ... Insulating substrate, 52 ... Conductor pattern, 53 ... Projection, 54 ... Solder plating, 60 ... IC chip , 61 ... Silicon chip, 62 ... Metal projection, 63 ... Film made of gold, 70 ... Thermoplastic resin film, 71 ... Film made of alkanes, 72 ... Through-hole.

Claims (1)

バンプ（１３〜１５）を有するプリント配線板（１０）とバンプ（２２，２３）を有するＩＣチップ（２０）との間に、前記バンプ（１３〜１５，２２，２３）に対応する位置に貫通孔（３１）を設けた熱可塑性樹脂フィルム（３０）を配置した後に、加熱・加圧して、プリント配線板（１０）のバンプ（１３〜１５）とＩＣチップ（２０）のバンプ（２２，２３）を接合するとともに前記フィルム（３０）を溶融させてＩＣチップ（２０）とプリント配線板（１０）との間を樹脂封止するＩＣチップの実装方法であって、
前記プリント配線板（１０）のバンプ（１３〜１５）の表面に、Ｃ−Ｈ結合解離エネルギーが９００ｋＪ／ｍｏｌよりも小さい炭化水素化合物であるジヒドロアントラセンよりなる膜（１６）を配置し、この膜（１６）を前記両バンプ間に介在させた状態で加熱・加圧して前記バンプの接合および樹脂封止を行うようにした
ことを特徴とするＩＣチップの実装方法。 Between the printed wiring board (10) having the bumps (13 to 15) and the IC chip (20) having the bumps (22 and 23), the holes penetrate through the positions corresponding to the bumps (13 to 15, 22, and 23). After arranging the thermoplastic resin film (30) provided with the holes (31), the bumps (13 to 15) of the printed wiring board (10) and the bumps (22, 23) of the IC chip (20) are heated and pressurized. ) And melting the film (30) to resin seal between the IC chip (20) and the printed wiring board (10),
On the surface of the bumps (13 to 15) of the printed circuit board (10), C-H bond dissociation energy is less than 900kJ / mol hydrocarbon compounds der distearate Hidoroantorase emissions by Li Cheng film (16) An IC chip mounting method, characterized in that the bumps are bonded and resin-sealed by placing and heating and pressurizing the film (16) between the bumps.
JP2009184508A 2009-08-07 2009-08-07 IC chip mounting method Expired - Lifetime JP4935870B2 (en)

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