JP4932268B2 - 半導体装置、及び半導体装置の作製方法 - Google Patents

半導体装置、及び半導体装置の作製方法 Download PDF

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Publication number
JP4932268B2
JP4932268B2 JP2006029163A JP2006029163A JP4932268B2 JP 4932268 B2 JP4932268 B2 JP 4932268B2 JP 2006029163 A JP2006029163 A JP 2006029163A JP 2006029163 A JP2006029163 A JP 2006029163A JP 4932268 B2 JP4932268 B2 JP 4932268B2
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insulating layer
layer
conductive layer
semiconductor device
insulating
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JP2006253661A (ja
JP2006253661A5 (enExample
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厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2006029163A 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法 Expired - Fee Related JP4932268B2 (ja)

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JP2006029163A JP4932268B2 (ja) 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法

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JP2005035258 2005-02-10
JP2005035258 2005-02-10
JP2006029163A JP4932268B2 (ja) 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法

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JP2006253661A JP2006253661A (ja) 2006-09-21
JP2006253661A5 JP2006253661A5 (enExample) 2009-03-26
JP4932268B2 true JP4932268B2 (ja) 2012-05-16

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101169395B1 (ko) * 2006-10-13 2012-07-30 삼성전자주식회사 상변화층의 표면처리공정을 포함하는 상변화 메모리 소자의제조방법
JP2019145546A (ja) * 2018-02-16 2019-08-29 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP6622940B1 (ja) * 2019-07-02 2019-12-18 株式会社日立パワーソリューションズ 両面実装基板、両面実装基板の製造方法、および半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722669A (ja) * 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
JP3104843B2 (ja) * 1994-08-19 2000-10-30 川崎製鉄株式会社 アンチヒューズ型半導体集積回路装置
CN100380596C (zh) * 2003-04-25 2008-04-09 株式会社半导体能源研究所 液滴排出装置、图案的形成方法及半导体装置的制造方法
JP2005019955A (ja) * 2003-05-30 2005-01-20 Seiko Epson Corp 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器

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