JP4932150B2 - 半導体素子の作製方法 - Google Patents

半導体素子の作製方法 Download PDF

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Publication number
JP4932150B2
JP4932150B2 JP2004306331A JP2004306331A JP4932150B2 JP 4932150 B2 JP4932150 B2 JP 4932150B2 JP 2004306331 A JP2004306331 A JP 2004306331A JP 2004306331 A JP2004306331 A JP 2004306331A JP 4932150 B2 JP4932150 B2 JP 4932150B2
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Japan
Prior art keywords
film
conductive film
semiconductor
conductive
electrode
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Expired - Fee Related
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JP2004306331A
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English (en)
Japanese (ja)
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JP2005150710A5 (https=
JP2005150710A (ja
Inventor
厳 藤井
慎志 前川
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004306331A priority Critical patent/JP4932150B2/ja
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Publication of JP2005150710A5 publication Critical patent/JP2005150710A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004306331A 2003-10-21 2004-10-21 半導体素子の作製方法 Expired - Fee Related JP4932150B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004306331A JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003361262 2003-10-21
JP2003361262 2003-10-21
JP2004306331A JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

Publications (3)

Publication Number Publication Date
JP2005150710A JP2005150710A (ja) 2005-06-09
JP2005150710A5 JP2005150710A5 (https=) 2007-11-29
JP4932150B2 true JP4932150B2 (ja) 2012-05-16

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JP2004306331A Expired - Fee Related JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4732118B2 (ja) * 2005-10-18 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007134481A (ja) * 2005-11-10 2007-05-31 Sony Corp 半導体装置の製造方法
KR101251995B1 (ko) 2006-01-27 2013-04-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP4950532B2 (ja) * 2006-03-20 2012-06-13 株式会社日本マイクロニクス 回路基板の配線補修方法およびその装置
JP4738299B2 (ja) 2006-09-20 2011-08-03 富士通株式会社 キャパシタ、その製造方法、および電子基板
WO2008084736A1 (ja) * 2007-01-09 2008-07-17 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
US20090023235A1 (en) * 2007-07-19 2009-01-22 Mackenzie John D Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices
JP5697309B2 (ja) * 2009-03-06 2015-04-08 地方独立行政法人東京都立産業技術研究センター 局在プラズモン共鳴センサの製造方法
CN105265029B (zh) 2013-04-30 2018-02-02 阿莫绿色技术有限公司 柔性印刷电路板及其制造方法
JP5753568B2 (ja) * 2013-11-20 2015-07-22 地方独立行政法人東京都立産業技術研究センター 局在プラズモン共鳴センサ及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3690552B2 (ja) * 1997-05-02 2005-08-31 株式会社アルバック 金属ペーストの焼成方法
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
AU2000225122A1 (en) * 2000-01-21 2001-07-31 Midwest Research Institute Method for forming thin-film conductors through the decomposition of metal-chelates in association with metal particles
JP2002224604A (ja) * 2001-01-31 2002-08-13 Hitachi Ltd パターン転写装置，パターン転写方法および転写用原版の製造方法
JP2002339076A (ja) * 2001-05-16 2002-11-27 Jsr Corp 金属銅薄膜の形成方法および銅薄膜形成用組成物
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003273111A (ja) * 2002-03-14 2003-09-26 Seiko Epson Corp 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法

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JP2005150710A (ja) 2005-06-09

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