JP4931928B2 - 保護光学コーティングを有する液浸光リソグラフィ・システム及び該システムの光学素子を形成する方法 - Google Patents
保護光学コーティングを有する液浸光リソグラフィ・システム及び該システムの光学素子を形成する方法 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims description 37
- 238000000576 coating method Methods 0.000 title description 22
- 239000011248 coating agent Substances 0.000 title description 20
- 238000007654 immersion Methods 0.000 title description 9
- 238000000206 photolithography Methods 0.000 title description 6
- 230000001681 protective effect Effects 0.000 title 1
- 239000011253 protective coating Substances 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000000671 immersion lithography Methods 0.000 claims abstract description 21
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 28
- -1 alkaline earth metal nitride Chemical class 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 20
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 14
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000012634 optical imaging Methods 0.000 abstract description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000002356 single layer Substances 0.000 description 18
- 239000011575 calcium Substances 0.000 description 12
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 12
- 229910052791 calcium Inorganic materials 0.000 description 11
- 229910001634 calcium fluoride Inorganic materials 0.000 description 11
- 210000002381 plasma Anatomy 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 150000001540 azides Chemical class 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001912 gas jet deposition Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005576 amination reaction Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JUINSXZKUKVTMD-UHFFFAOYSA-N hydrogen azide Chemical compound N=[N+]=[N-] JUINSXZKUKVTMD-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
(式1)
W=k1λ/nsinα
式中、k1は分解能係数であり、λは露光用放射の波長であり、nsinαは界面媒体の開口数(「NA」)であり、露光用放射はその界面を通してプリント中の構造体に伝達される。
液浸リソグラフィ・システムにおいて、液体は水を含むことが好ましく、分解性材料はアルカリ土類金属のフッ化物を含み、保護コーティングは、ハフニウム(Hf)、シリコン(Si)、ジルコニウム(Zr)、アルミニウム(Al)及びスカンジウム(Sc)からなる群から選択される少なくとも1つの元素の酸化物を含む。
本発明の特定の態様によれば、光学素子はフッ化カルシウムを含み、保護コーティングは窒化カルシウムを含む。
本発明の1つの態様によれば、光学素子はフッ化マグネシウムを含み、保護コーティングは窒化マグネシウムを含む。
本発明の特定の態様によれば、保護コーティングはフッ化物と窒化物の混合物を含む。例えば、保護コーティングは、窒化カルシウムとフッ化カルシウムの混合物を含む。
好ましくは、光学素子は、アルカリ土類金属のフッ化物を含み、保護コーティングを形成するステップは、ハフニウム(Hf)、シリコン(Si)、ジルコニウム(Zr)、アルミニウム(Al)及びスカンジウム(Sc)からなる群から選択される少なくとも1つの金属材料の酸化物を、光学素子を酸素源及び金属材料の蒸気源に曝すことによって形成するステップを含む。
好ましくは、第1の層を形成するステップは、光学素子の表面にヒドロキシル基を形成するステップと、ヒドロキシル基を金属材料の蒸気源と反応させて酸化物を形成するステップとを含む。一実施例において、ヒドロキシル基は、光学素子の表面のフッ化物を水蒸気に曝すことによって形成される。金属の蒸気源は、金属材料の塩化物を含むことができる。
好ましくは、保護コーティングを形成するステップは、フッ化物と窒化物の混合物を形成するステップをさらに含む。
好ましくは、保護コーティングを形成するステップは、光学素子をアニールするステップを含む。好ましくは、アニールするステップは、光学素子を約100ナノメートルと約200ナノメートルの間の波長を有する光源に曝すステップを含む。
好ましくは、保護コーティングを形成するステップは、複数の単層を逐次的に形成するステップを含み、各々の単層は少なくとも1つのアルカリ土類金属の窒化物を含み、複数の単層は、光学素子の表面のフッ化物と接触する、複数の単層の第1の単層を含む。
好ましくは、光源からの光を合焦するのに使用される液浸リソグラフィ・システムの光学素子であって、その表面と液浸リソグラフィ・システムによりパターン付けする物品との間の空間を占める液体と接触するように適合させた表面を有し、液体により分解される分解性材料を含む、光学素子を形成する方法が提供される。この方法は、光学素子上のアルカリ土類金属の窒化物を含む複数の単層の各々を逐次的に形成して、表面の分解性材料を覆う保護コーティングを形成するステップを含むが、この保護コーティングは光に対して透明であり、光に曝されるとき安定であり、そして液体に曝されるとき安定である。
或いは、コーティングは、例えば、約100ナノメートル(nm)と200nmの間の波長を有する紫外光などの紫外光源に曝すような光学的アニールにより緻密化することができる。
101:光学画像形成システム
103:光源
105:マスク
107:光学素子
109:光学素子の表面
110:光学画像形成システムの下端部
140:液体
145:界面領域
150:物品
152:感光性表面(物品の表面)
160:供給管
Claims (4)
- 光源からの光を合焦するために用いられる液浸リソグラフィ・システムの光学素子を形成する方法であって、前記光学素子は、その表面と前記液浸リソグラフィ・システムによりパターン付けされる物品との間の空間を占める液体と接触するように適合された表面を有し、
前記光学素子の表面において前記液体により分解される分解性材料を含む光学素子を準備するステップと、
前記表面の前記分解性材料を覆って前記光学素子の前記表面を前記液体から保護する保護コーティングであって、前記光に対して透明であり、前記光に曝されたとき安定であり、そして前記液体に曝されたとき安定である保護コーティングを形成するステップと
を含み、
前記液体は水を含み、前記光学素子は、少なくとも1つのアルカリ土類金属のフッ化物を含み、前記保護コーティングを前記形成するステップは、少なくとも1つのアルカリ土類金属の窒化物を形成するステップを含み、
前記保護コーティングを前記形成するステップは、シランを供給したチャンバ内で前記光学素子の前記表面内に窒素をプラズマ注入するステップを含む、
方法。 - 前記保護コーティングを前記形成するステップは、前記少なくとも1つのアルカリ土類金属の前記フッ化物と前記窒化物との混合物を形成するステップをさらに含む、請求項1に記載の方法。
- 前記保護コーティングを前記形成するステップは、前記光学素子をアニールするステップをさらに含む、請求項1に記載の方法。
- 前記アニールするステップは、前記光学素子を、100ナノメートルと200ナノメートルの間の波長を有する光源に曝すステップを含む、請求項3に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/163,007 | 2005-09-30 | ||
US11/163,007 US7495743B2 (en) | 2005-09-30 | 2005-09-30 | Immersion optical lithography system having protective optical coating |
PCT/EP2006/065995 WO2007039374A2 (en) | 2005-09-30 | 2006-09-05 | Immersion optical lithography system having protective optical coating |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009510749A JP2009510749A (ja) | 2009-03-12 |
JP2009510749A5 JP2009510749A5 (ja) | 2009-04-23 |
JP4931928B2 true JP4931928B2 (ja) | 2012-05-16 |
Family
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US (3) | US7495743B2 (ja) |
EP (1) | EP1929374B1 (ja) |
JP (1) | JP4931928B2 (ja) |
KR (1) | KR101027174B1 (ja) |
CN (1) | CN101278238B (ja) |
AT (1) | ATE552533T1 (ja) |
TW (1) | TW200728932A (ja) |
WO (1) | WO2007039374A2 (ja) |
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US7495743B2 (en) * | 2005-09-30 | 2009-02-24 | International Business Machines Corporation | Immersion optical lithography system having protective optical coating |
US20100003212A1 (en) * | 2006-06-26 | 2010-01-07 | Kis Georg L | Polymers with antimicrobial activity containing quaternary ammonium groups |
JP5120193B2 (ja) * | 2008-10-08 | 2013-01-16 | 株式会社ニコン | 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法 |
DE102016203442A1 (de) * | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives |
CN112522958A (zh) * | 2019-09-18 | 2021-03-19 | 天守(福建)超纤科技股份有限公司 | 一种光影处理技术合成革及其制备方法 |
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- 2006-09-05 WO PCT/EP2006/065995 patent/WO2007039374A2/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
US20080225251A1 (en) | 2008-09-18 |
WO2007039374A2 (en) | 2007-04-12 |
EP1929374B1 (en) | 2012-04-04 |
US20070296947A1 (en) | 2007-12-27 |
US7646469B2 (en) | 2010-01-12 |
CN101278238A (zh) | 2008-10-01 |
US7495743B2 (en) | 2009-02-24 |
ATE552533T1 (de) | 2012-04-15 |
JP2009510749A (ja) | 2009-03-12 |
WO2007039374A3 (en) | 2007-07-05 |
US20070076179A1 (en) | 2007-04-05 |
CN101278238B (zh) | 2010-06-16 |
US8009268B2 (en) | 2011-08-30 |
EP1929374A2 (en) | 2008-06-11 |
TW200728932A (en) | 2007-08-01 |
KR20080052598A (ko) | 2008-06-11 |
KR101027174B1 (ko) | 2011-04-05 |
WO2007039374B1 (en) | 2007-08-30 |
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