JP4926597B2 - 記憶装置及び半導体装置 - Google Patents

記憶装置及び半導体装置 Download PDF

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Publication number
JP4926597B2
JP4926597B2 JP2006215816A JP2006215816A JP4926597B2 JP 4926597 B2 JP4926597 B2 JP 4926597B2 JP 2006215816 A JP2006215816 A JP 2006215816A JP 2006215816 A JP2006215816 A JP 2006215816A JP 4926597 B2 JP4926597 B2 JP 4926597B2
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layer
conductive layer
light
substrate
photosensitized
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Japanese (ja)
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JP2007073943A (ja
JP2007073943A5 (https=
Inventor
幹央 湯川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2006215816A 2005-08-12 2006-08-08 記憶装置及び半導体装置 Expired - Fee Related JP4926597B2 (ja)

Priority Applications (1)

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JP2006215816A JP4926597B2 (ja) 2005-08-12 2006-08-08 記憶装置及び半導体装置

Applications Claiming Priority (3)

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JP2005234387 2005-08-12
JP2005234387 2005-08-12
JP2006215816A JP4926597B2 (ja) 2005-08-12 2006-08-08 記憶装置及び半導体装置

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JP2007073943A JP2007073943A (ja) 2007-03-22
JP2007073943A5 JP2007073943A5 (https=) 2009-09-17
JP4926597B2 true JP4926597B2 (ja) 2012-05-09

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JP2006215816A Expired - Fee Related JP4926597B2 (ja) 2005-08-12 2006-08-08 記憶装置及び半導体装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299606A (ja) * 2006-04-28 2007-11-15 Fujifilm Corp 分散型エレクトロルミネッセンス
JP4769627B2 (ja) * 2006-04-28 2011-09-07 富士フイルム株式会社 無機分散型エレクトロルミネッセンス素子
JP5255794B2 (ja) * 2007-07-27 2013-08-07 ユー・ディー・シー アイルランド リミテッド 有機電界発光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277754A (ja) * 1988-09-14 1990-03-16 Toppan Printing Co Ltd 静電印刷版用感光体および静電印刷版の製造方法
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
JPH10302963A (ja) * 1997-04-24 1998-11-13 Toppan Printing Co Ltd 高分子電荷輸送材料
JP2004111856A (ja) * 2002-09-20 2004-04-08 Ricoh Co Ltd 不揮発性有機半導体記憶素子、その製造方法、及び非接触情報管理表示装置
JP2005183619A (ja) * 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
US7289353B2 (en) * 2004-08-17 2007-10-30 Spansion, Llc Systems and methods for adjusting programming thresholds of polymer memory cells

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