JP4923480B2 - Exposure apparatus, device manufacturing method, and measurement member - Google Patents

Description

  The present invention relates to an exposure apparatus that exposes a substrate through a liquid and a device manufacturing method.

In an exposure apparatus used in a photolithography process, an immersion exposure apparatus has been devised that fills an optical path of exposure light with a liquid and exposes a substrate through the liquid as disclosed in the following patent documents.
International Publication No. 99/49504 Pamphlet

  By the way, in the immersion exposure apparatus, when measurement is performed using a predetermined measurement unit, it is conceivable to form a liquid immersion region on the measurement unit. In that case, for example, if the liquid remains on the measurement unit after performing the liquid removal operation on the measurement unit, the measurement accuracy using the measurement unit may deteriorate due to the remaining liquid. .

  The present invention has been made in view of such circumstances, and an exposure apparatus that can satisfactorily expose a substrate while suppressing deterioration in measurement accuracy using a measurement unit in an immersion exposure apparatus, and the exposure apparatus thereof An object of the present invention is to provide a device manufacturing method using the device.

  In order to solve the above-described problems, the present invention employs the following configurations corresponding to the respective drawings shown in the embodiments. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

  According to the first aspect of the present invention, the exposure apparatus that exposes the substrate (P) through the liquid (LQ) is set to include the measurement unit (61) provided on the predetermined surface (5F). The first region (81) and the second region which is set around the first region (81) on the predetermined surface (5F) and has a liquid repellency with respect to the liquid (LQ) than the first region (81). An exposure apparatus that is set to a predetermined size or less so that the liquid (LQ) remains in the first area (81). (EX) is provided.

  According to the first aspect of the present invention, it is possible to suppress the remaining of the liquid in the first region including the measurement unit, and it is possible to suppress deterioration in measurement accuracy using the measurement unit.

  According to the second aspect of the present invention, the exposure apparatus that exposes the substrate (P) through the liquid (LQ) is set to include the measurement unit (61) provided on the predetermined surface (5F). The first region (81) and the second region which is set around the first region (81) on the predetermined surface (5F) and has a liquid repellency with respect to the liquid (LQ) than the first region (81). A liquid immersion mechanism (12, 13, etc.) for forming a liquid immersion region (LR) of the liquid (LQ) on the predetermined surface (5F) so as to cover the first region (81) on the predetermined surface (5F); By moving the predetermined member (5) having the surface (5F) with respect to the liquid immersion region (LR), the liquid immersion region (LR) can be moved between the first region (81) and the outer region. When the liquid drive area (LR) and the liquid immersion area (LR) retreat from the first area (81), the liquid (L ) So as not to remain, depending on the size of the first region (81), an exposure apparatus provided with a control device (7) for setting a movement condition of a predetermined member (5) (EX) is provided.

  According to the 2nd aspect of this invention, the residual of the liquid in the 1st area | region containing a measurement part can be suppressed, and deterioration of the measurement precision using the measurement part can be suppressed.

  According to the third aspect of the present invention, a device manufacturing method using the exposure apparatus (EX) of the above aspect is provided.

  According to the 3rd aspect of this invention, a device can be manufactured using the exposure apparatus by which the deterioration of the measurement precision using the measurement part was suppressed.

  ADVANTAGE OF THE INVENTION According to this invention, deterioration of the measurement precision using the measurement part in an immersion exposure apparatus can be suppressed, a board | substrate can be exposed favorably, and the device which has desired performance can be manufactured.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

  FIG. 1 is a schematic block diagram that shows an exposure apparatus EX according to the present embodiment. In FIG. 1, an exposure apparatus EX has a mask stage 3 that can move while holding a mask M, and a substrate holder 4H that holds a substrate P, and a substrate stage that can move while holding the substrate P in the substrate holder 4H. 4 and a measurement stage 5 mounted with a measuring instrument for measuring exposure processing and movable independently of the substrate stage 4, a laser interference system 6 for measuring position information of each stage, and a mask stage 3. The illumination system IL for illuminating the mask M being exposed with the exposure light EL, the projection optical system PL for projecting the pattern image of the mask M illuminated with the exposure light EL onto the substrate P, and the overall operation of the exposure apparatus EX are controlled. And a control device 7 for performing the operation. Here, the substrate includes a substrate in which a photosensitive material (photoresist) is coated on a base material such as a semiconductor wafer, and the mask includes a reticle on which a device pattern to be reduced and projected on the substrate is formed. In this embodiment, a transmissive mask is used as a mask, but a reflective mask may be used.

  In the present embodiment, the exposure apparatus EX uses a scanning exposure apparatus (so-called scanning stepper) that exposes a pattern formed on the mask M onto the substrate P while moving the mask M and the substrate P synchronously in the scanning direction. An example will be described. In the following description, the synchronous movement direction (scanning direction) of the mask M and the substrate P in the horizontal plane is the Y-axis direction, the direction orthogonal to the Y-axis direction in the horizontal plane is the X-axis direction (non-scanning direction), the X-axis, and A direction perpendicular to the Y-axis direction and parallel to the optical axis AX of the projection optical system PL is taken as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and substantially increase the depth of focus. The liquid immersion system 1 is provided to fill the optical path K with the liquid LQ. The operation of the immersion system 1 is controlled by the control device 7. The liquid immersion system 1 includes a substrate disposed on the lower surface of the first optical element LS1 closest to the image plane of the projection optical system PL and the image plane side of the projection optical system PL among the plurality of optical elements of the projection optical system PL. The immersion path LR is formed by filling the optical path K of the exposure light EL between the surface of the substrate P on the holder 4H with the liquid LQ. In the present embodiment, water (pure water) is used as the liquid LQ.

  The exposure apparatus EX fills the optical path K of the exposure light EL with the liquid LQ using the liquid immersion system 1 at least while the pattern image of the mask M is projected onto the substrate P. The exposure apparatus EX irradiates the exposure light EL that has passed through the mask M onto the substrate P held by the substrate holder 4H via the projection optical system PL and the liquid LQ filled in the optical path K of the exposure light EL. The pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed. Further, in the exposure apparatus EX of the present embodiment, the liquid LQ filled in the optical path K of the exposure light EL between the first optical element LS1 and the substrate P is on the substrate P including the projection area AR of the projection optical system PL. A local liquid immersion method is adopted in which a liquid immersion area LR of the liquid LQ that is larger than the projection area AR and smaller than the substrate P is locally formed in a part of the area.

  The liquid immersion region LR is not only on the substrate P but also on an object disposed at a position facing the first optical element LS1 on the image plane side of the projection optical system PL, for example, a part of the substrate stage 4 or measurement. It can be formed on a part of the stage 5 or the like.

The illumination system IL includes a light source and an illumination optical system, and illuminates a predetermined illumination area IA on the mask M with exposure light EL having a uniform illuminance distribution. As the exposure light EL emitted from the illumination system IL, for example, far ultraviolet light (DUV light) such as bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, Further, vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) is used. In this embodiment, an ArF excimer laser device is used as the light source, and ArF excimer laser light is used as the exposure light EL.

  The illumination optical system includes an illumination uniformizing optical system including an optical integrator such as a fly-eye lens, a relay optical system, a blind device 30 for setting an illumination area IA on the mask M by exposure light EL, a condenser lens, and the like. Yes. The blind device 30 is provided on the optical path of the exposure light EL, and includes an irradiation area (illumination area) IA of the exposure light EL on the mask M and an irradiation area (projection area) AR of the exposure light EL on the substrate P. It can be adjusted.

  The mask stage 3 is movable in the X-axis, Y-axis, and θZ directions while holding the mask M by driving a mask stage driving device 3D including an actuator such as a linear motor. The position information of the mask stage 3 (and hence the mask M) is measured by a laser interferometer 6M that constitutes a part of the laser interference system 6. The laser interferometer 6M measures the position information of the mask stage 3 using a moving mirror 3K provided on the mask stage 3. The control device 7 drives the mask stage driving device 3D based on the measurement result of the laser interferometer 6M, and controls the position of the mask M held on the mask stage 3.

  The projection optical system PL projects the pattern image of the mask M onto the substrate P at a predetermined projection magnification, and has a plurality of optical elements, and these optical elements are held by a lens barrel PK. The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, 1/8 or the like. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. The projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

  The substrate stage 4 has a substrate holder 4H that holds the substrate P, and the base member BP is held in a state in which the substrate P is held on the substrate holder 4H by driving a substrate stage driving device 4D including an actuator such as a linear motor. Above, it can move in the direction of 6 degrees of freedom of X axis, Y axis, Z axis, θX, θY, and θZ directions. The substrate holder 4H is disposed in a recess 4R provided on the substrate stage 4, and the upper surface 4F of the substrate stage 4 other than the recess 4R is substantially the same height as the surface of the substrate P held by the substrate holder 4H. The surface is flat. There may be a step between the surface of the substrate P held by the substrate holder 4H and the upper surface 4F of the substrate stage 4.

  The position information of the substrate stage 4 (and consequently the substrate P) is measured by a laser interferometer 6P that constitutes a part of the laser interference system 6. The laser interferometer 6 </ b> P uses the movable mirror 4 </ b> K provided on the substrate stage 4 to measure position information regarding the X-axis, Y-axis, and θZ directions of the substrate stage 4. Further, surface position information (position information regarding the Z-axis, θX, and θY directions) of the surface of the substrate P held on the substrate stage 4 is detected by a focus / leveling detection system (not shown). The control device 7 drives the substrate stage driving device 4D based on the measurement result of the laser interferometer 6P and the detection result of the focus / leveling detection system, and controls the position of the substrate P held on the substrate stage 4.

  The measurement stage 5 is equipped with a measuring device that performs measurement related to exposure processing, such as a reference member on which a reference mark is formed, various photoelectric sensors, and the like, and by driving a measurement stage driving device 5D including an actuator such as a linear motor, With the measuring instrument mounted, the base member BP can move in directions of six degrees of freedom in the X axis, Y axis, Z axis, θX, θY, and θZ directions. The position information of the measurement stage 5 is measured by a laser interferometer 6P that constitutes a part of the laser interference system 6. The laser interferometer 6P measures position information regarding the X axis, the Y axis, and the θZ direction of the measurement stage 5 using the movable mirror 5K provided on the measurement stage 5. The control device 7 drives the measurement stage drive device 5D based on the measurement result of the laser interferometer 6P, and controls the position of the measurement stage 5. An exposure apparatus provided with a measurement stage is disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 11-135400 and Japanese Patent Application Laid-Open No. 2000-164504.

  Next, the immersion system 1 will be described. The immersion system 1 is an optical path of the exposure light EL between the first optical element LS1 of the projection optical system PL and the substrate P disposed at a position facing the first optical element LS1 and held by the substrate holder 4H. Fill K with liquid LQ. The liquid immersion system 1 is provided in the vicinity of the optical path K of the exposure light EL between the first optical element LS1 and the substrate P, and includes a supply port 12 and a liquid LQ for supplying the liquid LQ to the optical path K. A nozzle member 71 having a recovery port 22 for recovery, a liquid supply device 11 for supplying the liquid LQ to the supply port 12 through a supply pipe 13 and a supply channel formed inside the nozzle member 71, and a nozzle A liquid recovery apparatus 21 that recovers the liquid LQ recovered from the recovery port 22 of the member 71 through the recovery flow path formed inside the nozzle member 71 and the recovery pipe 23 is provided. The supply port 12 and the supply pipe 13 are connected via a supply flow path, and the recovery port 22 and the recovery pipe 23 are connected via a recovery flow path. In the present embodiment, the nozzle member 71 is provided in an annular shape so as to surround the optical path K of the exposure light EL, and the supply port 12 for supplying the liquid LQ is the optical path K of the exposure light EL in the nozzle member 71. The recovery port 22 that recovers the liquid LQ is provided on the lower surface of the nozzle member 71 that faces the surface of the substrate P.

  The liquid supply device 11 can deliver a clean and temperature-adjusted liquid LQ. The liquid recovery device 21 includes a vacuum system and the like and can recover the liquid LQ. The operations of the liquid supply device 11 and the liquid recovery device 21 are controlled by the control device 7. The liquid LQ delivered from the liquid supply device 11 flows through the supply pipe 13 and the supply flow path of the nozzle member 71 and then is supplied from the supply port 12 to the optical path K of the exposure light EL. Further, the liquid LQ recovered from the recovery port 22 by driving the liquid recovery device 21 flows through the recovery flow path of the nozzle member 71 and is then recovered by the liquid recovery device 21 via the recovery pipe 23. The control device 7 controls the liquid immersion system 1 to perform the liquid supply operation from the supply port 12 and the liquid recovery operation via the recovery port 22 in parallel, so that the first optical element LS1 and the substrate P are connected. The optical path K of the exposure light EL in between is filled with the liquid LQ to form the liquid immersion region LR.

  FIG. 2 is a schematic diagram for explaining an example of operations of the substrate stage 4 and the measurement stage 5. The control device 7 can move the substrate stage 4 and the measurement stage 5 independently of each other on the base member BP using the stage driving devices 4D and 5D. The control device 7 can adjust the positional relationship between the substrate stage 4 and the measurement stage 5. For example, as shown in FIG. 2, the control device 7 can bring the substrate stage 4 and the measurement stage 5 close to or in contact with each other, and the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5 are almost the same height. (Same). Further, the control device 7 moves the substrate stage 4 and the measurement stage 5 together in the XY directions in a state where the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5 are close to or in contact with each other. The immersion area LR formed by the immersion system 1 can be moved between the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5.

  The upper surface 4F of the substrate stage 4 has liquid repellency with respect to the liquid LQ. In the present embodiment, the upper surface 4F includes a liquid repellent material such as a fluorine-based material such as polytetrafluoroethylene. Further, in the upper surface 5F of the measurement stage 5, regions other than the first region 81 described later are also covered with a material having liquid repellency with respect to the liquid LQ, similarly to the upper surface 4F of the substrate stage 4.

  FIG. 3 is a plan view of the measurement stage 5. As described above, the measurement stage 5 includes a plurality of measuring instruments (measurement members) for performing various measurements related to the exposure process. A first light transmission portion 40 is formed at a predetermined position on the upper surface 5F of the measurement stage 5, and below the light transmission portion 40 (−Z direction), for example, International Publication No. 99/60361 pamphlet ( A wavefront aberration measuring instrument 41 as disclosed in the corresponding European Patent No. 1,079,223) and the like is disposed.

  Further, a second light transmission part 42 is formed at a predetermined position on the upper surface 5F of the measurement stage 5, and measurement is performed below the light transmission part 42 (−Z direction) via the projection optical system PL. An exposure light measuring instrument 43 that measures information (light quantity, illuminance, illuminance unevenness, etc.) relating to the exposure light EL irradiated on the stage 5 is arranged. As the exposure light measuring instrument 43, for example, as disclosed in Japanese Patent Application Laid-Open No. 57-117238 (corresponding US Pat. No. 4,465,368) or the like, illuminance unevenness is measured, or Japanese Patent Application Laid-Open No. 2001-267239. And a non-uniformity measuring instrument for measuring the amount of variation in the transmittance of the exposure light EL of the projection optical system PL, as disclosed in Japanese Patent Application Laid-Open No. 11-16816 (corresponding US Patent Application Publication No. 2002/2002). 0061469 specification) etc. can be used.

  A reference plate 44 on which a plurality of reference marks are formed is provided at a predetermined position on the upper surface 5F of the measurement stage 5. The reference plate 44 includes, for example, a reference mark 45 measured by a VRA (Visual Reticle Alignment) type alignment system as disclosed in, for example, Japanese Patent Application Laid-Open No. 7-176468, and Japanese Patent Application Laid-Open No. 4-65603, for example. A fiducial mark 46 is provided that is measured by an FIA (Field Image Alignment) type alignment system as disclosed.

  Further, a transparent member 47 is provided at a predetermined position on the upper surface 5F of the measurement stage 5, and below the transparent member 47 (−Z direction), the first optical element LS1 of the projection optical system PL and a transparent member are provided. An observation camera capable of acquiring an image (optical image) of the liquid immersion area LR of the liquid LQ formed on the member 47 is provided. The observation camera includes an optical system and an image sensor, and acquires an image of the liquid immersion region LR and the like via the transparent member 47.

  In addition, a slit-like light transmission portion 61 is formed at a predetermined position on the upper surface 5F of the measurement stage 5, and below the light transmission portion (slit) 61 (−Z direction), for example, Japanese Patent Laid-Open No. 2002-2002. An aerial image measuring device 60 for measuring the imaging characteristics (optical characteristics) of the projection optical system PL as disclosed in Japanese Patent No. 14005 and Japanese Patent Laid-Open No. 2002-198303 is arranged.

  4 is a cross-sectional view in the vicinity of the slit 61, and FIG. 5 is a plan view. 4 and 5, the slit 61 is formed in the slit plate 65. As shown in FIG. 4, an opening 5R is formed in a part of 5F of the measurement stage 5, and a slit plate 65 is fitted into the opening 5R. In addition, an internal space connected to the opening 5R is formed in the measurement stage 5. The aerial image measuring device 60 includes a light receiving element 63 that receives light that has passed through the slit 61. The light receiving element 63 is arranged below the slit plate 65 without any gap, and the light from the slit 61 enters the light receiving element 63 without passing through the gas space. The upper surface of the slit plate 65 fitted in the opening 5R is substantially flush with the upper surface 5F of the measurement stage 5, and the upper surface of the slit plate 65 constitutes a part of the upper surface 5F of the measurement stage 5. That is, in the present embodiment, the slit 61 is provided on the upper surface 5 </ b> F of the measurement stage 5 including the upper surface of the slit plate 65.

  The slit plate 65 includes a transparent glass plate member 64 and a light shielding film 62 made of chromium or the like formed on the upper surface of the glass plate member 64, and the light shielding film 62 is formed on a part of the light shielding film 62. A slit 61 that is not formed is formed. As a material for forming the glass plate member 64, synthetic quartz or meteorite having transparency to ArF excimer laser light or KrF excimer laser light is used. The slit 61 can be formed by etching the light shielding film 62, for example. A step 62 </ b> D is provided near the slit 61 of the light shielding film 62.

  The upper surface of the slit plate 65 (the upper surface 5F of the measurement stage 5) is a first region 81 that is set to include the slit 61, and the upper surface of the slit plate 65 (the upper surface 5F of the measurement stage 5). And a second region 82 having higher liquid repellency than the first region 81 with respect to the liquid LQ. Of the upper surface of the slit plate 65 (the upper surface 5F of the measurement stage 5), the second region 82 is covered with a liquid repellent film 68 made of a liquid repellent material, and the first region 81 is not covered with the liquid repellent film 68. In the second region 82, the liquid repellent film 68 is provided on the uppermost layer (surface layer). The liquid repellent film 68 is made of a material containing a fluorine resin material. In the present embodiment, the liquid repellent film 68 is formed by “Cytop” manufactured by Asahi Glass Co., Ltd.

An intermediate film 66 made of a light transmissive material is provided between the light shielding film 62 and the liquid repellent film 68. In the first region 81, the intermediate film 66 is provided in the uppermost layer (surface layer). That is, in the first region 81, the intermediate film 66 covers the slit 61 (the glass plate member 64 exposed from the slit 61) and the light shielding film 62. The intermediate film 66 is provided to reduce the level difference between the light shielding film 62 and the glass plate member 64 in the slit 61 and the level difference 62D of the light shielding film 62 and to improve the adhesion of the liquid repellent film 68. In the present embodiment, the intermediate film 66 is made of, for example, SiO ₂ (liquefied hardening SiO ₂ ).

  Thus, the intermediate film 66 is exposed in the first region 81, the liquid repellent film 68 is exposed in the second region 82, and the second region 82 is more repellent to the liquid LQ than the first region 81. It has liquidity. In this embodiment, the contact angle of the first region 81 (intermediate film 66) with respect to the liquid LQ is about 20 to 30 °, and the contact angle of the second region 82 (liquid repellent film 68) with respect to the liquid LQ is about 105 °. .

  As shown in FIG. 5, the first area 81 where the liquid repellent film 68 is not provided is set to a predetermined size or less so that the liquid LQ remaining in the first area 81 and its vicinity is suppressed. ing. In the present embodiment, the first region 81 has a substantially circular shape, and its diameter D is set to 1 mm or less.

  The length of the slit 61 is as small as about 10 to 15 μm and the width is about 0.2 μm. In the figure, only one slit 61 whose longitudinal direction is the X-axis direction is shown, but in reality, there are a slit whose longitudinal direction is the X-axis direction and a slit whose longitudinal direction is the Y-axis direction. A plurality of each is provided. The plurality of slits are arranged in the first region 81.

  In the case where the first region 81 is provided on a part of the upper surface of the slit plate 65, for example, a liquid repellent film 68 is first provided on the entire upper surface of the slit plate 65, and then a part of the liquid repellent film 68 is provided. (The liquid repellent film in the region corresponding to the first region 81) is removed. An example of the process for removing a part of the liquid repellent film 68 is a dry etching process. Of course, when the liquid repellent film 68 is coated (coated) on the slit plate 65, the first region 81 is formed in the region corresponding to the first region 81 by not coating the liquid repellent film 68. can do.

  Next, a method for measuring the imaging characteristics of the projection optical system PL using the aerial image measuring device 60 will be described with reference to FIG. 6A is a side view schematically showing the positional relationship between the liquid immersion area LR and the slit plate 65 formed on the image plane side of the projection optical system PL, and FIG. 6B is a plan view.

  As shown in FIG. 6, the control device 7 uses the liquid immersion system 1 to fill the space between the projection optical system PL and the slit plate 65 with the liquid LQ. The immersion system 1 forms an immersion region LR for the liquid LQ on the upper surface 5F of the measurement stage 5 so as to cover the first region 81. The control device 7 performs a measurement process using the slit 61 in a state where the liquid immersion region LR is formed so as to cover the first region 81. Further, when performing a measurement process using the aerial image measuring device 60 including the slit 61, the mask stage 3 holds a measurement mask on which an aerial image measurement pattern is formed.

  The control device 7 emits exposure light EL from the illumination system IL. The exposure light EL is applied to the slit plate 65 after passing through the measurement mask, the projection optical system PL, and the liquid LQ in the liquid immersion area LR. The light that has passed through the slit 61 of the slit plate 65 is received by the light receiving element 63 of the aerial image measuring device 60. The light receiving element 63 outputs a photoelectric conversion signal (light amount signal) corresponding to the amount of received light to the control device 7. The control device 7 performs a predetermined calculation process based on the light reception result of the light receiving element 63, and obtains an imaging characteristic through the projection optical system PL and the liquid LQ. Thus, the control device 7 performs the measurement process by irradiating the slit 61 with the exposure light EL via the liquid LQ in the liquid immersion region LR.

  Here, the control device 7 uses the blind device 30 of the illumination system IL to adjust the size of the illumination area IA on the measurement mask, and thus the projection area AR on the slit plate 65, and irradiates the exposure light EL. You may do it. Specifically, the control device 7 adjusts the blind device 30 so that the exposure light EL is applied only to the inside of the first region 81, and prevents the exposure light EL from being applied to the second region 82. Can do.

  Although the liquid repellent film 68 of this embodiment is resistant to the exposure light EL (ultraviolet light), its liquid repellency is deteriorated by exposure to the exposure light EL (ultraviolet light), or There is a possibility that a defect in which the quality of the surface deteriorates (such as deterioration of the surface state). Therefore, when the liquid repellent film 68 is provided so as to cover the slit 61 irradiated with the exposure light EL, the quality of the liquid repellent film 68 in the portion irradiated with the exposure light EL deteriorates due to the exposure light EL irradiation. There is a possibility of affecting the subsequent measurement process or degrading the measurement accuracy.

  In the present embodiment, since the liquid repellent film 68 is not provided in the first region 81 including the slit 61 irradiated with the exposure light EL, the occurrence of the above-described problems can be prevented.

  On the other hand, the liquid LQ is prevented from remaining even after the liquid immersion area LR has retreated from the measurement stage 5 by making the most area of the upper surface 5F of the measurement stage 5 including the second area 82 liquid repellent. be able to.

  After the measurement processing by the aerial image measuring device 60 in the state where the immersion region LR is formed so as to cover the first region 81 including the slit 61 is completed, the control device 7 drives the measurement stage as shown in FIG. Using the apparatus 5D, the measurement stage 5 having the upper surface 5F is moved in the XY direction with respect to the liquid immersion area LR of the liquid LQ formed on the image plane side of the projection optical system PL, and the liquid immersion area LR is moved. Move to an area outside the first area 81. In other words, the control device 7 moves the liquid immersion region LR away from the first region 81 by moving the measurement stage 5.

  In the present embodiment, the size of the first region 81 is set so that the liquid LQ does not remain in the first region 81 and the vicinity thereof when the liquid immersion region LR retreats from the first region 81. When the liquid LQ remains in the first region 81 and / or the vicinity thereof, the measurement accuracy may deteriorate due to the heat of vaporization when the remaining liquid LQ is vaporized. Further, when the liquid LQ remains in the first region 81, the remaining liquid LQ is vaporized, thereby forming an adhesion trace (watermark in the present embodiment) of the liquid LQ in the first region 81 including the slit 61. There is a possibility. Since the watermark acts as a foreign substance, there is a possibility that problems such as affecting subsequent measurement operations and degrading measurement accuracy may occur. In the present embodiment, since the size of the first region 81 is optimally set, the liquid LQ remains in the first region 81 and its vicinity when the liquid immersion region LR retreats from the first region 81. Can be prevented.

  Next, an experiment conducted for optimally setting the size of the first region 81 and the result thereof will be described with reference to the schematic diagrams of FIGS. After forming the liquid immersion region LR so as to cover the first region 81 set to include the slit 81 provided on the upper surface 5F, the upper surface 5F in the predetermined direction at a predetermined moving speed with respect to the liquid immersion region LR. The liquid LQ was observed in the first region 81 and / or in the vicinity thereof.

  That is, as shown in FIG. 8A, after forming the liquid immersion region LR so as to cover the first region 81 provided on the upper surface 5F, the upper surface 5F is immersed in the liquid as shown in FIG. The region LR was moved in a predetermined direction at a predetermined moving speed, and it was observed whether or not the liquid LQ remained in the first region 81 and / or in the vicinity thereof. When the diameter D of the first region 81 was set to 1 mm or less, the liquid LQ did not remain in the first region 81 and the vicinity thereof.

  On the other hand, as shown in the schematic diagram of FIG. 9, when the diameter D of the first region 81 was set to 2 mm and 4 mm, a drop of the liquid LQ remained in the vicinity of the first region 81.

  Thus, in this experiment, by setting the first region 81 to be 1 mm or less in diameter, when the liquid immersion region LR has retreated from the first region 81, the liquid LQ remains in the first region 81 and its vicinity. It turns out that it suppresses doing.

  Note that the size of the first region 81 described above is merely an example, and may be optimally set according to a moving condition when the measuring stage 5 is moved, for example. Here, the movement condition includes at least one of the movement speed, acceleration (deceleration), and movement direction of the measurement stage 5. For example, when the immersion area LR is moved away from the first area 81, the moving speed of the measurement stage 5 is slowed down so that the first area 81 has a size greater than 1 mm. There is a possibility that the liquid LQ hardly remains. Further, for example, when it is desired to increase the moving speed of the measurement stage 5 when the liquid immersion area LR is moved away from the first area 81, it is desirable to make the size of the first area 81 smaller than 1 mm.

  In the experiment, the diameter D of the first region 81 is set to 4 mm, and the measurement stage 5 is set to 500 mm / sec. , The number of liquid LQ droplets remaining in the vicinity of the first region 81 was two or three, but 250, 350 mm / sec. As a result, the number of droplets of the liquid LQ remaining in the vicinity of the first region 81 is two. Further, the diameter D of the first region 81 is set to 2 mm, and the measurement stage 5 is set to 250, 350, 500 mm / sec. , The number of droplets of the liquid LQ remaining in the vicinity of the first region 81 was one, one, and two, respectively. Further, the diameter D of the first region 81 is set to 1 mm, and the measurement stage 5 is set to 250, 350, 500 mm / sec. The liquid LQ did not remain in the first region 81 and the vicinity thereof when moving at a moving speed of.

  Further, by setting the size of the first region 81 according to the acceleration, deceleration, moving direction, etc. of the measurement stage 5 when the liquid immersion region LR is moved away from the first region 81, the liquid LQ remains. May be suppressed. As described above, by setting the size of the first region 81 according to the movement condition when moving the measurement stage 5, there is a possibility that the residual liquid LQ can be suppressed.

  Next, a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described. Before the substrate P is exposed, the imaging characteristic measurement processing of the projection optical system PL using the aerial image measuring device 60 is performed in the above-described procedure.

  After the measurement process is performed (or before) using the slit 61 in the state where the liquid immersion region LR is formed so as to cover the first region 81, the control device 7 performs, for example, measurement using the exposure light measuring instrument 43, reference At least one of measurement using the plate 44 and measurement using the wavefront aberration measuring instrument 41 can be performed. In the present embodiment, the liquid repellent film 68 in a predetermined region (first region) including the light transmission part 42 is removed from the upper surface 5F of the measurement stage 5 with a predetermined size (diameter 1 mm). After the measurement operation using the measuring instrument 43 is completed, even if the liquid immersion area LR is withdrawn from the first area including the light transmitting portion 42, the liquid LQ is prevented from remaining in the first area and the vicinity thereof. ing. Similarly, in the present embodiment, in the upper surface 5F of the measurement stage 5, a predetermined region (first region) including the light transmission unit 40 and a predetermined region (first region) including the reference marks 45 and 46 of the reference plate 44 are provided. However, since the liquid repellent film 68 is removed and the first area has a diameter of 1 mm or less, even if the immersion area LR is retracted from the first area after the measurement operation is completed, The liquid LQ is prevented from remaining in the region and the vicinity thereof.

  After the measurement process at the measurement stage 5 is completed, the control device 7 brings the substrate stage 4 and the measurement stage 5 into contact (or approaches) as described with reference to FIG. The substrate stage 4 and the measurement stage 5 are moved together in the XY plane using the stage driving devices 4D and 5D while maintaining the relative positional relationship between the liquid immersion area LR and the measurement stage. 5 from the upper surface 5F of the substrate 5 to the upper surface 4F of the substrate stage 4. The control device 7 appropriately performs predetermined processing such as adjustment processing (calibration processing) of the imaging characteristics of the projection optical system PL using the result measured by the measurement stage 5. The mask stage 3 holds a mask M for manufacturing a device, and the substrate stage 4 holds a substrate P for manufacturing a device. The control device 7 emits the exposure light EL from the illumination system IL, illuminates the mask M with the exposure light EL, and the substrate via the projection optical system PL and the liquid LQ in the liquid immersion region LR formed on the substrate P. A pattern image of the mask M is projected onto P.

  As described above, when the liquid immersion area LR covering the first area 81 is moved away from the first area 81 by setting the first area 81 to a predetermined size or less, the first area 81 and its vicinity It is possible to prevent the liquid LQ from remaining on the surface. Therefore, it is possible to suppress the occurrence of problems caused by the remaining liquid LQ.

  In the present embodiment, the first region 81 is substantially circular. That is, the first region 81 has no corner and has a shape in which the liquid LQ hardly remains. As described above, by optimizing the shape of the first region 81, the remaining liquid LQ can be effectively suppressed.

  As described above, the size of the first region 81 can be set according to the movement condition when the measurement stage 5 is moved. However, the control device 7 moves the liquid immersion region LR from the first region 81. The moving condition of the measurement stage 5 can also be set according to the size of the first region 81 so that the liquid LQ does not remain in the first region 81 and the vicinity thereof when retreated. For example, when the size of the first region 81 is large, the remaining liquid LQ can be suppressed by reducing the moving speed, acceleration, and the like. Further, when the size of the first region 81 is small, there is a possibility that the moving speed, acceleration, and the like can be increased.

  Further, as described above, since the remaining of the liquid LQ may be suppressed by optimizing the shape of the first region 81, the moving condition of the measurement stage 5 is considered in consideration of the shape of the first region 81. May be set. For example, when there is a corner at a predetermined position of the edge of the first region 81, when the liquid immersion region LR covering the first region 81 is moved away from the first region 81 in order to suppress the remaining liquid LQ, The measurement stage 5 is moved in a direction in which the liquid LQ in the liquid immersion region LR hardly remains at the corner. In addition, when the first region 81 has a shape that can suppress the remaining liquid LQ, such as a circular shape, the moving speed of the measurement stage 3 may be increased. When the first area 81 is circular, there is no need to provide a restriction on the movement direction of the liquid immersion area LR relative to the first area 81 in the XY plane, that is, no restriction on the movement direction of the measurement stage 5. .

  Conversely, the shape of the first region 81 may be set in consideration of the movement condition of the measurement stage 5. For example, when the measurement stage 5 is moved in a predetermined direction with respect to the liquid immersion region LR in order to move the liquid immersion region LR covering the first region 81 away from the first region 81, among the edges of the first region 81, The first region 81 is set in a shape having no corners on the path through which the liquid immersion region LR passes. By doing so, there is a possibility that the residual liquid LQ can be suppressed.

  In consideration of the moving condition of the measurement stage 5, at least one of the contact angle with respect to the liquid LQ in the first region 81 and the contact angle with respect to the liquid LQ in the second region 82 may be set. Alternatively, the difference between the contact angle of the first region 81 with respect to the liquid LQ and the contact angle of the second region 82 with respect to the liquid LQ may be set in consideration of the moving condition of the measurement stage 5. For example, when the moving speed of the measurement stage 5 is slowed when the immersion area LR is moved away from the first area 81, the contact angle with respect to the liquid LQ in the first area 81 or the liquid LQ in the second area 82 Even if the contact angle is small, the remaining liquid LQ can be suppressed. Further, when the moving speed of the measurement stage 5 is increased when the immersion area LR is moved away from the first area 81, the contact angle of the first area 81 with respect to the liquid LQ is optimized, By optimizing the difference between the contact angle with respect to the liquid LQ and the contact angle with respect to the liquid LQ in the second region 82, the remaining liquid LQ in the first region 81 may be suppressed.

  Conversely, the moving condition of the measurement stage 5 may be set in consideration of at least one of the contact angle of the first region 81 with respect to the liquid LQ and the contact angle of the second region 82 with respect to the liquid LQ. Alternatively, the moving condition of the measurement stage 5 may be set in consideration of the difference between the contact angle of the first region 81 with respect to the liquid LQ and the contact angle of the second region 82 with respect to the liquid LQ. For example, when the contact angle of the first region 81 with respect to the liquid LQ is large (the first region 81 is liquid repellent), the measurement stage 5 is moved when the liquid immersion region LR is moved away from the first region 81. Even if the speed is increased, there is a possibility that the residual liquid LQ can be suppressed. In addition, when the difference between the contact angle of the first region 81 with respect to the liquid LQ and the contact angle of the second region 82 with respect to the liquid LQ is small, the moving speed and acceleration of the measurement stage 5 are optimized according to the difference. can do.

  Then, by performing the experiment or simulation as described above, the movement condition of the measurement stage 5 for suppressing the residual liquid LQ, the shape of the first region 81, and the first region 81 (second region 82). The contact angle with respect to the liquid LQ can be optimized.

  In addition, as described above, the upper surface 5F of the measurement stage 5 is provided with a plurality of light transmission parts and marks irradiated with the exposure light EL, and the first region is formed on the plurality of light transmission parts (marks). A plurality of such areas are set so as to correspond to each other, but the size of each of the first areas may be set according to each light transmission portion (mark). For example, when the size of the light transmission part 40 and the size of the light transmission part 42 are different from each other, the sizes of the first regions corresponding to the light transmission part 40 and the light transmission part 42 can be different from each other. .

  Moreover, the control apparatus 7 can set the movement conditions of the measurement stage 5 when retracting the liquid immersion area LR from each of the plurality of first areas according to the plurality of first areas, respectively. For example, when the size of the first region corresponding to the light transmission unit 40 and the size of the first region corresponding to the light transmission unit 42 are different from each other, the movement condition is set according to the size of the first region. Is done. Further, when the shape of the first region corresponding to the light transmission part 40 (or the contact angle with respect to the liquid LQ) and the shape of the first region corresponding to the light transmission part 42 (or the contact angle with respect to the liquid LQ) are different from each other. Can set the movement condition of the measurement stage 5 in accordance with each of the first regions.

In the above-described embodiment, the uppermost film of the first region 81 is SiO ₂ , but other materials may be used as long as the exposure light EL can be transmitted.

  In the above-described embodiment, a plurality of measuring instruments (measuring members) are arranged on the measuring stage 5, but some may be omitted or some may be provided on the substrate stage 4.

  As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. . When the purity of pure water supplied from a factory or the like is low, the exposure apparatus may have an ultrapure water production device.

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be about 1.44, and when ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL On the substrate P, the wavelength is shortened to 1 / n, that is, about 134 nm, and a high resolution can be obtained. Furthermore, since the depth of focus is enlarged by about n times, that is, about 1.44 times compared with that in the air, the projection optical system PL can be used when it is sufficient to ensure the same depth of focus as that in the air. The numerical aperture can be further increased, and the resolution is improved in this respect as well.

  In the present embodiment, the optical element LS1 is attached to the tip of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma aberration, etc.) can be adjusted by this optical element. . The optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL.

  When the pressure between the optical element at the tip of the projection optical system PL generated by the flow of the liquid LQ and the substrate P is large, the optical element is not exchangeable but the optical element is moved by the pressure. It may be fixed firmly so that there is no.

  In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ. However, for example, the liquid with the cover glass made of a plane-parallel plate attached to the surface of the substrate P is used. The structure which satisfy | fills LQ may be sufficient.

  In the projection optical system of the above-described embodiment, the optical path space on the image plane side of the optical element at the tip is filled with liquid, but as disclosed in International Publication No. 2004/019128, the optical at the tip is used. It is also possible to employ a projection optical system in which the optical path space on the object plane side of the element is filled with liquid.

The liquid LQ of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not pass through water. The liquid LQ may be, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil that can transmit F ₂ laser light. In this case, the lyophilic treatment is performed by forming a thin film with a substance having a molecular structure having a small polarity including fluorine, for example, at a portion in contact with the liquid LQ. In addition, as the liquid LQ, the liquid LQ is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used.

  Moreover, as the liquid LQ, a liquid having a refractive index of about 1.6 to 1.8 may be used. Furthermore, the optical element LS1 may be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more).

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise.

  Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P being substantially stationary (for example, a refraction type projection optical system that does not include a reflecting element at 1/8 reduction magnification). The present invention can also be applied to an exposure apparatus that performs batch exposure on the substrate P using the above. In this case, after that, with the second pattern and the substrate P substantially stationary, a reduced image of the second pattern is collectively exposed onto the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially transferred on the substrate P, and the substrate P is sequentially moved.

  The present invention also relates to a twin stage type exposure apparatus having a plurality of substrate stages as disclosed in JP-A-10-163099, JP-A-10-214783, JP-T 2000-505958, and the like. It can also be applied to. In this case, the measurement unit is disposed on a part of the upper surface of at least one substrate stage.

  The present invention can also be applied to an exposure apparatus that does not include a measurement stage, as disclosed in WO99 / 49504. In this case, the measurement unit is provided on a part of the upper surface of the substrate stage. The present invention can also be applied to an exposure apparatus that includes a plurality of substrate stages and measurement stages.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in Japanese Patent No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used.

  Further, as disclosed in International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line-and-space pattern on a substrate P by forming interference fringes on the substrate P. The present invention can also be applied.

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 10, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a substrate of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows the exposure apparatus which concerns on this embodiment. It is a schematic diagram for demonstrating an example of operation | movement of a substrate stage and a measurement stage. It is a top view which shows an example of a measurement stage. It is sectional drawing which shows the principal part of a measurement stage. It is a top view which shows the principal part of a measurement stage. It is a figure for demonstrating the measurement operation | movement using a measurement stage. It is a figure for demonstrating the measurement operation | movement using a measurement stage. It is a schematic diagram for demonstrating the relationship between the magnitude | size of a 1st area | region, and the behavior of a liquid. It is a schematic diagram for demonstrating the relationship between the magnitude | size of a 1st area | region, and the behavior of a liquid. It is a flowchart figure for demonstrating an example of the manufacturing process of a microdevice.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid immersion system, 4 ... Substrate stage, 5 ... Measurement stage, 5D ... Measurement stage drive device, 5F ... Upper surface, 7 ... Control device, 61 ... Slit, 68 ... Liquid-repellent film, 81 ... 1st area | region, 82 ... Second area, EX ... exposure apparatus, LQ ... liquid, LR ... immersion area, P ... substrate

Claims (20)

In an exposure apparatus that exposes a substrate with exposure light through a liquid in an immersion area ,
The liquid immersion device is set so as to include a measurement unit provided on a predetermined surface of the movable predetermined member, includes a light-transmitting film that covers the measurement unit, and is covered with the liquid immersion region. A first region irradiated with the exposure light through a liquid in the region;
Wherein a predetermined plane is set around the first region, a second region comprising a liquid-repellent film to the liquid than the light transmission of the film,
In the first region , the liquid-repellent film is not provided, and the light-transmitting film is provided on the most surface layer ,
Wherein in the second region, exposing the liquid-repellent film is provided on the most surface layer device. The exposure apparatus according to claim 1, wherein the light transmissive film includes SiO ₂ .   The exposure apparatus according to claim 1, wherein the liquid-repellent film than the light-transmitting film is formed of a material containing a fluorine-based resin material.   The exposure apparatus according to claim 1, wherein the first region is set to have a diameter of 1 mm or less.   The exposure apparatus according to claim 1, wherein the first region is substantially circular. On the predetermined plane, and a liquid immersion mechanism that forms the immersion area of the liquid so as to cover the first region,
Wherein said predetermined member having a predetermined surface by moving relative to the liquid immersion area, and a movable driving mechanism the liquid immersion area between the first region and the outer region,
The size of the first region is set so that no liquid remains in the first region when the liquid immersion region retreats from the first region. Exposure device.   The exposure apparatus according to claim 6, wherein the size of the first region is set according to a moving condition when the predetermined member is moved.   The exposure apparatus according to claim 7, wherein the moving condition includes at least a part of a moving speed, an acceleration / deceleration speed, and a moving direction of the predetermined member.   The exposure apparatus according to claim 7 or 8, wherein at least one of a shape of the first region and a contact angle with respect to the liquid is set in consideration of the movement condition.   10. The exposure apparatus according to claim 6, further comprising a control device that performs a predetermined measurement process using the measurement unit in a state where the liquid immersion region is formed so as to cover the first region.   The exposure apparatus according to claim 10, wherein the control device performs the measurement process by irradiating the measurement unit with the exposure light through the liquid in the immersion area. In an exposure apparatus that exposes a substrate with exposure light through a liquid,
Look including a light-permeable membrane covering the measuring section provided on a predetermined plane, free the said exposure light through a liquid of the immersion area in a state covered with the liquid immersion area of the liquid is irradiated One area,
A second region that is set around the first region on the predetermined surface and includes a liquid- repellent film with respect to the liquid rather than the light-transmitting film;
An immersion mechanism for forming a liquid immersion area on the predetermined surface so as to cover the first area;
A drive mechanism capable of moving the liquid immersion region between the first region and an outer region thereof by moving a predetermined member having the predetermined surface with respect to the liquid immersion region ;
In the first region, the liquid-repellent film is not provided, and the light-transmitting film is provided on the most surface layer ,
An exposure apparatus in which the liquid-repellent film is provided on the most surface layer in the second region .   The exposure apparatus according to claim 12, further comprising: a control device that sets a movement condition of the predetermined member so that no liquid remains in the first area when the liquid immersion area retreats from the first area.   The exposure apparatus according to claim 13, wherein the moving condition includes at least a part of a moving speed, an acceleration / deceleration speed, and a moving direction of the member.   The exposure apparatus according to claim 13 or 14, wherein the moving condition is set in consideration of at least one of a shape of the first region and a contact angle with respect to the liquid. A plurality of measurement units are provided on the predetermined surface, and a plurality of the first regions are set to correspond to the plurality of measurement units,
The control device according to any one of claims 13 to 15, wherein the control device sets a movement condition for retracting the liquid immersion region from each of the plurality of first regions according to the plurality of first regions. Exposure device. Exposure light is irradiated to the measurement unit through the liquid in the liquid immersion region in a state where the liquid immersion region is formed so as to cover the first region,
The exposure apparatus according to claim 1, wherein the first region is irradiated with the exposure light, and the second region is not irradiated with the exposure light. A projection optical system;
A stage that moves on the image plane side of the projection optical system;
A measuring member provided on the stage,
The exposure apparatus according to claim 1, wherein an upper surface of the measurement member has the first region and the second region.   The device manufacturing method using the exposure apparatus as described in any one of Claims 1-18. A measuring member that is irradiated with exposure light in an exposure apparatus that exposes a substrate via a projection optical system and a liquid,
A plate member provided on a stage that moves on the image plane side of the projection optical system;
A measurement unit that is provided on the upper surface of the plate member and is irradiated with exposure light from the projection optical system via the liquid;
A first region in which a light-transmitting film provided on the plate member so as to cover the measurement unit forms an outermost layer ;
The light transmissive film is provided around the first region forming the outermost layer on the plate member, and the liquid repellant film has a second region having the outermost layer formed from the light transmissive film. Measuring member.

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