JP4919860B2 - ガス分析装置及び基板処理装置 - Google Patents
ガス分析装置及び基板処理装置 Download PDFInfo
- Publication number
- JP4919860B2 JP4919860B2 JP2007092192A JP2007092192A JP4919860B2 JP 4919860 B2 JP4919860 B2 JP 4919860B2 JP 2007092192 A JP2007092192 A JP 2007092192A JP 2007092192 A JP2007092192 A JP 2007092192A JP 4919860 B2 JP4919860 B2 JP 4919860B2
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- JP
- Japan
- Prior art keywords
- substrate
- temperature
- gas
- wafer
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/16—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K5/00—Measuring temperature based on the expansion or contraction of a material
- G01K5/48—Measuring temperature based on the expansion or contraction of a material the material being a solid
- G01K5/486—Measuring temperature based on the expansion or contraction of a material the material being a solid using microstructures, e.g. made of silicon
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Drying Of Semiconductors (AREA)
Description
1c…窓
1…測定チャンバ(測定容器)
3…真空ポンプ(減圧手段)
4…ハロゲンランプ(加熱手段)
8…質量分析計
11…干渉計(温度計測システム)
16…温度制御部(温度計測システム)
21…エッチング装置
22…COR処理装置
23…PHT処理装置
38a…載置台(載置部)
38…処理チャンバ(処理容器)
39…高温ガスの供給路(加熱手段)
44…真空ポンプ(減圧手段)
m…薄膜(試料)
W…Siウェハ(基板)
Claims (7)
- 試料を吸着させた基板が載せられる載置部を有する測定容器と、
前記測定容器内を減圧する減圧手段と、
前記載置部上の試料を吸着させた基板を加熱する加熱手段と、
前記測定容器内に挿入され、温度が上昇することによって脱離する試料の気体分子を検出する質量分析計と、
試料を吸着させた基板の光学的厚さを検出する干渉計を利用して、試料を吸着させた基板の温度を計測する温度計測システムと、
を備えるガス分析装置。 - 前記基板はSiウェハであり、前記試料はSiウェハ上に形成された膜であることを特徴とする請求項1に記載のガス分析装置。
- 前記質量分析計は、四重極質量分析計であることを特徴とする請求項1又は2に記載のガス分析装置。
- 前記干渉計は、干渉性の低い性質の光源を利用した低コヒーレンス干渉計であることを特徴とする請求項1ないし3のいずれかに記載のガス分析装置。
- 前記測定容器には、前記測定容器の外側と前記測定容器の内側との間で光を通過させる窓が設けられ、
前記干渉計は、前記窓を通して試料を吸着させた基板に光を照射することを特徴とする請求項1ないし4のいずれかに記載のガス分析装置。 - 酸化珪素の膜を含む基板を、ハロゲン元素を含むガス及び塩基性ガスにさらし、酸化珪素の膜とハロゲン元素を含むガス及び塩基性ガスとを化学反応させて、酸化珪素の膜を反応生成物に変質させる化学反応処理装置と、
反応生成物を加熱して気化させ、基板から除去する熱処理装置と、を備える基板処理装置において、
前記熱処理装置は、
反応生成物を含む基板が載せられる載置部を有する処理容器と、
前記処理容器内を減圧する減圧手段と、
前記載置部上の前記基板を加熱する加熱手段と、
前記処理容器内に挿入され、温度が上昇することによって脱離する反応生成物の気体分子を検出する質量分析計と、
前記基板の光学的厚さを検出する干渉計を利用して、前記基板の温度を計測する温度計測システムと、
を備えることを特徴とする基板処理装置。 - 前記質量分析計と前記温度計測システムの検出・計測結果に基づいて、前記熱処理装置の熱処理の終点を検出することを特徴とする請求項6に記載の基板処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007092192A JP4919860B2 (ja) | 2007-03-30 | 2007-03-30 | ガス分析装置及び基板処理装置 |
US12/057,940 US20080236747A1 (en) | 2007-03-30 | 2008-03-28 | Gas analyzing apparatus and substrate processing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007092192A JP4919860B2 (ja) | 2007-03-30 | 2007-03-30 | ガス分析装置及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008249537A JP2008249537A (ja) | 2008-10-16 |
JP4919860B2 true JP4919860B2 (ja) | 2012-04-18 |
Family
ID=39792241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007092192A Expired - Fee Related JP4919860B2 (ja) | 2007-03-30 | 2007-03-30 | ガス分析装置及び基板処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080236747A1 (ja) |
JP (1) | JP4919860B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1391718B1 (it) * | 2008-11-13 | 2012-01-27 | Marposs Spa | Apparecchiatura e metodo per la misura ottica mediante interferometria dello spessore di un oggetto |
KR101514098B1 (ko) | 2009-02-02 | 2015-04-21 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치와 온도 측정 방법 및 장치 |
US8330961B1 (en) * | 2010-07-15 | 2012-12-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Optical multi-species gas monitoring sensor and system |
WO2012044402A1 (en) * | 2010-09-29 | 2012-04-05 | Conocophillips Company-Ip Services Group | High-pressure quartz crystal microbalance |
JP2012089805A (ja) * | 2010-10-22 | 2012-05-10 | Toshiba Corp | エッチング装置およびエッチング方法 |
CN103411888B (zh) * | 2013-08-27 | 2016-01-20 | 南京信息工程大学 | 一种气体浓度测量方法及测量装置 |
US9502226B2 (en) * | 2014-01-14 | 2016-11-22 | 908 Devices Inc. | Sample collection in compact mass spectrometry systems |
KR20180101598A (ko) * | 2016-02-01 | 2018-09-12 | 도쿄엘렉트론가부시키가이샤 | 건식 에칭 공정의 사후 열처리의 공정 완료를 결정하는 시스템 및 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5229303A (en) * | 1989-08-29 | 1993-07-20 | At&T Bell Laboratories | Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature |
US5549756A (en) * | 1994-02-02 | 1996-08-27 | Applied Materials, Inc. | Optical pyrometer for a thin film deposition system |
US5795493A (en) * | 1995-05-01 | 1998-08-18 | Motorola, Inc. | Laser assisted plasma chemical etching method |
JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
JP2003307458A (ja) * | 2002-04-15 | 2003-10-31 | Akifumi Ito | 基材の温度測定方法および温度測定装置 |
WO2004003256A1 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Anisotropic dry etching of cu-containing layers |
JP3846800B2 (ja) * | 2003-08-18 | 2006-11-15 | 株式会社リガク | 発生ガス分析方法とその装置 |
JP2005106524A (ja) * | 2003-09-29 | 2005-04-21 | Tdk Corp | 標準試料、ならびに校正方法、分析方法およびデバイスの製造方法 |
JP2006053042A (ja) * | 2004-08-11 | 2006-02-23 | Fuji Electric Holdings Co Ltd | ガス検知センサの表面吸着物測定方法および測定装置 |
US7259862B2 (en) * | 2004-09-20 | 2007-08-21 | Opsens Inc. | Low-coherence interferometry optical sensor using a single wedge polarization readout interferometer |
JP4756845B2 (ja) * | 2004-10-12 | 2011-08-24 | 東京エレクトロン株式会社 | 温度測定装置,温度測定方法,温度測定システム,制御システム,制御方法 |
US7446881B2 (en) * | 2005-01-12 | 2008-11-04 | Tokyo Electron Limited | System, apparatus, and method for determining temperature/thickness of an object using light interference measurements |
US7956310B2 (en) * | 2005-09-30 | 2011-06-07 | Tokyo Electron Limited | Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media |
-
2007
- 2007-03-30 JP JP2007092192A patent/JP4919860B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-28 US US12/057,940 patent/US20080236747A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20080236747A1 (en) | 2008-10-02 |
JP2008249537A (ja) | 2008-10-16 |
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