JP4908936B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4908936B2
JP4908936B2 JP2006162445A JP2006162445A JP4908936B2 JP 4908936 B2 JP4908936 B2 JP 4908936B2 JP 2006162445 A JP2006162445 A JP 2006162445A JP 2006162445 A JP2006162445 A JP 2006162445A JP 4908936 B2 JP4908936 B2 JP 4908936B2
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Japan
Prior art keywords
substrate
film
semiconductor device
curvature
element layer
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JP2006162445A
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Japanese (ja)
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JP2007043100A (ja
JP2007043100A5 (enExample
Inventor
卓也 鶴目
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006162445A priority Critical patent/JP4908936B2/ja
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Publication of JP2007043100A5 publication Critical patent/JP2007043100A5/ja
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  • Thin Film Transistor (AREA)
JP2006162445A 2005-06-30 2006-06-12 半導体装置の作製方法 Expired - Fee Related JP4908936B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006162445A JP4908936B2 (ja) 2005-06-30 2006-06-12 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005192484 2005-06-30
JP2005192484 2005-06-30
JP2006162445A JP4908936B2 (ja) 2005-06-30 2006-06-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007043100A JP2007043100A (ja) 2007-02-15
JP2007043100A5 JP2007043100A5 (enExample) 2009-07-16
JP4908936B2 true JP4908936B2 (ja) 2012-04-04

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JP2006162445A Expired - Fee Related JP4908936B2 (ja) 2005-06-30 2006-06-12 半導体装置の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100320249A1 (en) * 2007-02-28 2010-12-23 Claus Peter Kluge Method for producing a component using asymmetrical energy input along the parting or predetermined breaking line
JP2017199834A (ja) * 2016-04-28 2017-11-02 株式会社ジェイデバイス 半導体パッケージ及び半導体パッケージの製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129340A (en) * 1980-03-13 1981-10-09 Toshiba Corp Method of dividing platelike material
JPH01321085A (ja) * 1988-06-23 1989-12-27 Nippon Steel Corp セラミックスのレーザ加工法
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
JP3618200B2 (ja) * 1997-08-04 2005-02-09 株式会社日立製作所 セラミック基板および電子回路装置の製造方法
JP2002141443A (ja) * 2000-11-07 2002-05-17 Toshiba Corp 半導体装置
JP3882521B2 (ja) * 2001-03-29 2007-02-21 セイコーエプソン株式会社 半導体装置の実装方法
JP4886937B2 (ja) * 2001-05-17 2012-02-29 リンテック株式会社 ダイシングシート及びダイシング方法
ATE316691T1 (de) * 2002-04-19 2006-02-15 Xsil Technology Ltd Laser-behandlung
JP2004035315A (ja) * 2002-07-02 2004-02-05 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板の分断方法および脆性材料基板分断装置
JP4198966B2 (ja) * 2002-10-17 2008-12-17 株式会社東芝 半導体装置の製造方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4288092B2 (ja) * 2003-03-04 2009-07-01 ケンネマン ビートリッツ 厚さが薄いウエハからチップを製造する方法
JP2004289047A (ja) * 2003-03-25 2004-10-14 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JP2005072174A (ja) * 2003-08-22 2005-03-17 Disco Abrasive Syst Ltd 基板とその表面に積層された積層体から構成された被加工物の分割方法
JP4590174B2 (ja) * 2003-09-11 2010-12-01 株式会社ディスコ ウエーハの加工方法

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