JP4908447B2 - 電子デバイス及び薄膜トランジスタ - Google Patents

電子デバイス及び薄膜トランジスタ Download PDF

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Publication number
JP4908447B2
JP4908447B2 JP2008077942A JP2008077942A JP4908447B2 JP 4908447 B2 JP4908447 B2 JP 4908447B2 JP 2008077942 A JP2008077942 A JP 2008077942A JP 2008077942 A JP2008077942 A JP 2008077942A JP 4908447 B2 JP4908447 B2 JP 4908447B2
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Japan
Prior art keywords
phase
dielectric constant
semiconductor layer
constant polymer
dielectric
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Japanese (ja)
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JP2008258610A5 (enExample
JP2008258610A (ja
Inventor
ウー イリャン
ケー．マハバディ ハディ
エス．オング ベング
エフ．スミス ポール
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Xerox Corp
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Xerox Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
JP2008077942A 2007-04-02 2008-03-25 電子デバイス及び薄膜トランジスタ Active JP4908447B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/695,138 US7795614B2 (en) 2007-04-02 2007-04-02 Device with phase-separated dielectric structure
US11/695,138 2007-04-02

Publications (3)

Publication Number Publication Date
JP2008258610A JP2008258610A (ja) 2008-10-23
JP2008258610A5 JP2008258610A5 (enExample) 2011-05-12
JP4908447B2 true JP4908447B2 (ja) 2012-04-04

Family

ID=39495246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008077942A Active JP4908447B2 (ja) 2007-04-02 2008-03-25 電子デバイス及び薄膜トランジスタ

Country Status (6)

Country Link
US (1) US7795614B2 (enExample)
EP (1) EP1978573B1 (enExample)
JP (1) JP4908447B2 (enExample)
KR (1) KR101451597B1 (enExample)
CA (1) CA2627496C (enExample)
TW (1) TWI433366B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
TW201117446A (en) * 2009-11-12 2011-05-16 Nat Univ Tsing Hua Method for forming organic layer of electronic device by contact printing
JP5737849B2 (ja) * 2010-03-02 2015-06-17 地方独立行政法人 大阪市立工業研究所 有機半導体膜の製造方法及び有機トランジスタ
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
US9076975B2 (en) * 2010-04-27 2015-07-07 Xerox Corporation Dielectric composition for thin-film transistors
JP6133532B2 (ja) * 2010-11-10 2017-05-24 株式会社カネカ トップゲート型有機薄膜トランジスタの製造方法および該製造法によって得られる有機薄膜トランジスタ
US8623447B2 (en) * 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors

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US5374453A (en) * 1991-05-24 1994-12-20 Rogers Corporation Particulate filled composite film and method of making same
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6528218B1 (en) 1998-12-15 2003-03-04 International Business Machines Corporation Method of fabricating circuitized structures
US6280794B1 (en) * 1999-03-10 2001-08-28 Conexant Systems, Inc. Method of forming dielectric material suitable for microelectronic circuits
US6136702A (en) * 1999-11-29 2000-10-24 Lucent Technologies Inc. Thin film transistors
JP2003518754A (ja) * 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
KR100432152B1 (ko) * 2001-04-12 2004-05-17 한국화학연구원 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
US6621099B2 (en) 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
JP4014431B2 (ja) 2002-03-27 2007-11-28 富士通株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US20030227014A1 (en) 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
US7098525B2 (en) 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005243822A (ja) * 2004-02-25 2005-09-08 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
US7098150B2 (en) 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US7282735B2 (en) 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US7348280B2 (en) 2005-11-03 2008-03-25 International Business Machines Corporation Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions

Also Published As

Publication number Publication date
JP2008258610A (ja) 2008-10-23
CA2627496A1 (en) 2008-10-02
US20080237581A1 (en) 2008-10-02
EP1978573A2 (en) 2008-10-08
EP1978573A3 (en) 2011-05-18
KR20080090330A (ko) 2008-10-08
KR101451597B1 (ko) 2014-10-16
CA2627496C (en) 2014-07-29
EP1978573B1 (en) 2017-07-12
US7795614B2 (en) 2010-09-14
TW200849687A (en) 2008-12-16
TWI433366B (zh) 2014-04-01

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