KR101451597B1 - 상-분리된 유전 구조물을 갖는 장치 - Google Patents

상-분리된 유전 구조물을 갖는 장치 Download PDF

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KR101451597B1
KR101451597B1 KR1020080030866A KR20080030866A KR101451597B1 KR 101451597 B1 KR101451597 B1 KR 101451597B1 KR 1020080030866 A KR1020080030866 A KR 1020080030866A KR 20080030866 A KR20080030866 A KR 20080030866A KR 101451597 B1 KR101451597 B1 KR 101451597B1
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South Korea
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poly
dielectric
phase
low
polymer
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KR20080090330A (ko
Inventor
일리앙 우
하디 케이 마하바디
벵 에스. 옹
폴 에프. 스미스
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제록스 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
KR1020080030866A 2007-04-02 2008-04-02 상-분리된 유전 구조물을 갖는 장치 Active KR101451597B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/695,138 US7795614B2 (en) 2007-04-02 2007-04-02 Device with phase-separated dielectric structure
US11/695,138 2007-04-02

Publications (2)

Publication Number Publication Date
KR20080090330A KR20080090330A (ko) 2008-10-08
KR101451597B1 true KR101451597B1 (ko) 2014-10-16

Family

ID=39495246

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KR1020080030866A Active KR101451597B1 (ko) 2007-04-02 2008-04-02 상-분리된 유전 구조물을 갖는 장치

Country Status (6)

Country Link
US (1) US7795614B2 (enExample)
EP (1) EP1978573B1 (enExample)
JP (1) JP4908447B2 (enExample)
KR (1) KR101451597B1 (enExample)
CA (1) CA2627496C (enExample)
TW (1) TWI433366B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
TW201117446A (en) * 2009-11-12 2011-05-16 Nat Univ Tsing Hua Method for forming organic layer of electronic device by contact printing
JP5737849B2 (ja) * 2010-03-02 2015-06-17 地方独立行政法人 大阪市立工業研究所 有機半導体膜の製造方法及び有機トランジスタ
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
US9076975B2 (en) * 2010-04-27 2015-07-07 Xerox Corporation Dielectric composition for thin-film transistors
JP6133532B2 (ja) * 2010-11-10 2017-05-24 株式会社カネカ トップゲート型有機薄膜トランジスタの製造方法および該製造法によって得られる有機薄膜トランジスタ
US8623447B2 (en) * 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors

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JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005243822A (ja) * 2004-02-25 2005-09-08 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP2006295166A (ja) * 2005-04-13 2006-10-26 Xerox Corp 電子デバイス、薄膜トランジスタ及び薄膜トランジスタの作製方法

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US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6528218B1 (en) 1998-12-15 2003-03-04 International Business Machines Corporation Method of fabricating circuitized structures
US6280794B1 (en) * 1999-03-10 2001-08-28 Conexant Systems, Inc. Method of forming dielectric material suitable for microelectronic circuits
US6136702A (en) * 1999-11-29 2000-10-24 Lucent Technologies Inc. Thin film transistors
JP2003518754A (ja) * 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
KR100432152B1 (ko) * 2001-04-12 2004-05-17 한국화학연구원 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막
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JP4014431B2 (ja) 2002-03-27 2007-11-28 富士通株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
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JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005243822A (ja) * 2004-02-25 2005-09-08 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP2006295166A (ja) * 2005-04-13 2006-10-26 Xerox Corp 電子デバイス、薄膜トランジスタ及び薄膜トランジスタの作製方法

Also Published As

Publication number Publication date
JP2008258610A (ja) 2008-10-23
CA2627496A1 (en) 2008-10-02
US20080237581A1 (en) 2008-10-02
EP1978573A2 (en) 2008-10-08
EP1978573A3 (en) 2011-05-18
KR20080090330A (ko) 2008-10-08
JP4908447B2 (ja) 2012-04-04
CA2627496C (en) 2014-07-29
EP1978573B1 (en) 2017-07-12
US7795614B2 (en) 2010-09-14
TW200849687A (en) 2008-12-16
TWI433366B (zh) 2014-04-01

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