JP2008258610A5 - - Google Patents

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Publication number
JP2008258610A5
JP2008258610A5 JP2008077942A JP2008077942A JP2008258610A5 JP 2008258610 A5 JP2008258610 A5 JP 2008258610A5 JP 2008077942 A JP2008077942 A JP 2008077942A JP 2008077942 A JP2008077942 A JP 2008077942A JP 2008258610 A5 JP2008258610 A5 JP 2008258610A5
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JP
Japan
Prior art keywords
phase
dielectric constant
polymer
layer
constant polymer
Prior art date
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Application number
JP2008077942A
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English (en)
Japanese (ja)
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JP2008258610A (ja
JP4908447B2 (ja
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Priority claimed from US11/695,138 external-priority patent/US7795614B2/en
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Publication of JP2008258610A publication Critical patent/JP2008258610A/ja
Publication of JP2008258610A5 publication Critical patent/JP2008258610A5/ja
Application granted granted Critical
Publication of JP4908447B2 publication Critical patent/JP4908447B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008077942A 2007-04-02 2008-03-25 電子デバイス及び薄膜トランジスタ Active JP4908447B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/695,138 US7795614B2 (en) 2007-04-02 2007-04-02 Device with phase-separated dielectric structure
US11/695,138 2007-04-02

Publications (3)

Publication Number Publication Date
JP2008258610A JP2008258610A (ja) 2008-10-23
JP2008258610A5 true JP2008258610A5 (enExample) 2011-05-12
JP4908447B2 JP4908447B2 (ja) 2012-04-04

Family

ID=39495246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008077942A Active JP4908447B2 (ja) 2007-04-02 2008-03-25 電子デバイス及び薄膜トランジスタ

Country Status (6)

Country Link
US (1) US7795614B2 (enExample)
EP (1) EP1978573B1 (enExample)
JP (1) JP4908447B2 (enExample)
KR (1) KR101451597B1 (enExample)
CA (1) CA2627496C (enExample)
TW (1) TWI433366B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
TW201117446A (en) * 2009-11-12 2011-05-16 Nat Univ Tsing Hua Method for forming organic layer of electronic device by contact printing
JP5737849B2 (ja) * 2010-03-02 2015-06-17 地方独立行政法人 大阪市立工業研究所 有機半導体膜の製造方法及び有機トランジスタ
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
US9076975B2 (en) * 2010-04-27 2015-07-07 Xerox Corporation Dielectric composition for thin-film transistors
JP6133532B2 (ja) * 2010-11-10 2017-05-24 株式会社カネカ トップゲート型有機薄膜トランジスタの製造方法および該製造法によって得られる有機薄膜トランジスタ
US8623447B2 (en) * 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors

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US5374453A (en) * 1991-05-24 1994-12-20 Rogers Corporation Particulate filled composite film and method of making same
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6528218B1 (en) 1998-12-15 2003-03-04 International Business Machines Corporation Method of fabricating circuitized structures
US6280794B1 (en) * 1999-03-10 2001-08-28 Conexant Systems, Inc. Method of forming dielectric material suitable for microelectronic circuits
US6136702A (en) * 1999-11-29 2000-10-24 Lucent Technologies Inc. Thin film transistors
JP2003518754A (ja) * 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
KR100432152B1 (ko) * 2001-04-12 2004-05-17 한국화학연구원 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
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JP4014431B2 (ja) 2002-03-27 2007-11-28 富士通株式会社 半導体記憶装置及び半導体記憶装置の製造方法
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