JP4896588B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4896588B2
JP4896588B2 JP2006148425A JP2006148425A JP4896588B2 JP 4896588 B2 JP4896588 B2 JP 4896588B2 JP 2006148425 A JP2006148425 A JP 2006148425A JP 2006148425 A JP2006148425 A JP 2006148425A JP 4896588 B2 JP4896588 B2 JP 4896588B2
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JP
Japan
Prior art keywords
conductive layer
card
layer
password
region
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Expired - Fee Related
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JP2006148425A
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English (en)
Japanese (ja)
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JP2007012040A (ja
JP2007012040A5 (enExample
Inventor
麻美 田所
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006148425A priority Critical patent/JP4896588B2/ja
Publication of JP2007012040A publication Critical patent/JP2007012040A/ja
Publication of JP2007012040A5 publication Critical patent/JP2007012040A5/ja
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Publication of JP4896588B2 publication Critical patent/JP4896588B2/ja
Expired - Fee Related legal-status Critical Current
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2006148425A 2005-05-31 2006-05-29 半導体装置 Expired - Fee Related JP4896588B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006148425A JP4896588B2 (ja) 2005-05-31 2006-05-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005158301 2005-05-31
JP2005158301 2005-05-31
JP2006148425A JP4896588B2 (ja) 2005-05-31 2006-05-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2007012040A JP2007012040A (ja) 2007-01-18
JP2007012040A5 JP2007012040A5 (enExample) 2009-07-09
JP4896588B2 true JP4896588B2 (ja) 2012-03-14

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ID=37750377

Family Applications (1)

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JP2006148425A Expired - Fee Related JP4896588B2 (ja) 2005-05-31 2006-05-29 半導体装置

Country Status (1)

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JP (1) JP4896588B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5202026B2 (ja) * 2008-02-25 2013-06-05 三菱電機株式会社 レーザスクライブ装置
WO2009131132A1 (en) * 2008-04-25 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI597842B (zh) * 2011-03-25 2017-09-01 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
KR20130040706A (ko) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
IN2014DN03274A (enExample) * 2011-10-14 2015-05-22 Semiconductor Energy Lab
JP6426504B2 (ja) * 2015-03-10 2018-11-21 株式会社東芝 携帯可能電子装置、及びシステム
US10161901B2 (en) 2015-12-07 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual gate biologically sensitive field effect transistor
JP6736926B2 (ja) * 2016-03-18 2020-08-05 株式会社リコー 画像処理装置、プログラム及び画像処理システム
KR101833977B1 (ko) * 2016-10-28 2018-03-06 (주) 개마텍 지문센서 어셈블리
KR101833979B1 (ko) * 2016-10-28 2018-03-06 (주) 개마텍 지문센서 어셈블리의 제조방법
KR101833991B1 (ko) * 2016-10-28 2018-03-06 (주) 개마텍 지문센서 모듈 및 이의 제조방법
KR101833993B1 (ko) * 2016-11-23 2018-03-06 (주) 개마텍 투명강화조립층의 제조방법 및 이를 이용한 지문센서 어셈블리의 제조방법
WO2019103172A1 (ko) * 2017-11-21 2019-05-31 (주)개마텍 지문센서 어셈블리 및 이를 이용한 지문센서 모듈 및 이의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266376A (ja) * 1985-09-18 1987-03-25 Omron Tateisi Electronics Co カ−ド及びカ−ド真偽判別装置
JP2735075B2 (ja) * 1988-02-23 1998-04-02 富士通株式会社 指紋照合用辞書作成方法
JP3106566B2 (ja) * 1991-07-26 2000-11-06 ソニー株式会社 液晶表示装置および製造方法
JPH05300144A (ja) * 1992-04-16 1993-11-12 Toshiba Corp 個人通信端末装置
EP0846786A3 (en) * 1996-12-06 2001-11-07 Applied Materials, Inc. Modified physoical vapor deposition chamber and method of depositing materials at low pressure
JPH11134302A (ja) * 1997-10-31 1999-05-21 Mitsubishi Electric Corp 端末のアクセス制御装置および認証カード
JPH11149453A (ja) * 1997-11-18 1999-06-02 Canon Inc 情報処理装置及び方法
JP3557363B2 (ja) * 1999-03-11 2004-08-25 財団法人 中部科学技術センター 指紋入力装置及び同装置を用いた個人識別システム
JP4646368B2 (ja) * 1999-08-31 2011-03-09 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4485078B2 (ja) * 2000-01-26 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003030153A (ja) * 2001-07-13 2003-01-31 Mitsubishi Electric Corp 認証情報生成装置および認証情報生成方法
JP2003242464A (ja) * 2002-02-13 2003-08-29 Dainippon Printing Co Ltd Ｉｃカード及びそれを用いる管理装置

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JP2007012040A (ja) 2007-01-18

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