JP4890833B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP4890833B2 JP4890833B2 JP2005313031A JP2005313031A JP4890833B2 JP 4890833 B2 JP4890833 B2 JP 4890833B2 JP 2005313031 A JP2005313031 A JP 2005313031A JP 2005313031 A JP2005313031 A JP 2005313031A JP 4890833 B2 JP4890833 B2 JP 4890833B2
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- Prior art keywords
- boat
- substrate
- substrate holder
- lock
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 111
- 238000011068 loading method Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 50
- 239000000463 material Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 12
- 238000001816 cooling Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical group Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
11 処理炉
13 ボート
13a ボートキャップ
14 ボート交換装置
19 ボート置き台
20 ボート置き台
41 ボート回転装置
43 ボート載置部
59 ボート受座
60 受座側位置決め部
62 ロックプレート
63 ロータリアクチュエータ
64 ボート底板
66 袋穴
67 鍵孔
68 ボート側位置決め部
71 凸部ピン
72 凹部穴
80 載置盤側位置決め部
81 凸部ピン
88 ロックプレート
96 凹部穴
97 凸部ピン
98 テーパ穴
108 環突条
109 環凹部
Claims (2)
- 底面部にロック穴が形成されると共に該ロック穴の周囲に凹部が形成された基板保持具と、該基板保持具に基板を載置した状態で基板を処理する処理室と、該処理室外に設けられ前記基板保持具を前記処理室に装入する為に前記基板保持具が載置される第1の載置部と、前記処理室外に設けられ前記基板保持具に基板が挿入出される為に該基板保持具が載置される第2の載置部と、前記処理室外に設けられ前記第1の載置部及び前記第2の載置部とは異なる位置で前記基板保持具を待機させる為に、該基板保持具が載置される第3の載置部と、前記第1の載置部と前記第2の載置部及び前記第3の載置部との間で前記基板保持具を移動させる手段と、前記第1の載置部若しくは前記第2の載置部又は前記第3の載置部に設けられ前記ロック穴に挿入出可能で前記基板保持具との相対回転で前記ロック穴と係合可能なロックプレートと、該ロックプレートの周囲に設けられ前記凹部と嵌合させる為の凸部と、前記ロックプレートを前記基板保持具に対して相対回転可能な手段とを有し、前記基板保持具が前記載置部に載置される際に前記凸部が凹部に嵌合されると共に、前記ロックプレートが前記ロック穴に挿入されることを特徴とする基板処理装置。
- 前記凸部は座刳穴の中に設けられている請求項1の基板処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005313031A JP4890833B2 (ja) | 2005-10-27 | 2005-10-27 | 基板処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005313031A JP4890833B2 (ja) | 2005-10-27 | 2005-10-27 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007119838A JP2007119838A (ja) | 2007-05-17 |
JP4890833B2 true JP4890833B2 (ja) | 2012-03-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005313031A Active JP4890833B2 (ja) | 2005-10-27 | 2005-10-27 | 基板処理装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4890833B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090004405A1 (en) * | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Thermal Batch Reactor with Removable Susceptors |
JP5559985B2 (ja) * | 2009-05-21 | 2014-07-23 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
CN101994100B (zh) * | 2009-08-20 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | 化学气相沉积设备的安装方法及化学气相沉积设备 |
JP2013074197A (ja) * | 2011-09-28 | 2013-04-22 | Disco Abrasive Syst Ltd | 板状物搬送装置 |
KR102153644B1 (ko) * | 2017-06-30 | 2020-09-09 | 가부시키가이샤 아루박 | 성막 장치, 마스크 프레임, 얼라인먼트 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2540524B2 (ja) * | 1985-10-24 | 1996-10-02 | テキサス インスツルメンツ インコ−ポレイテツド | ウエ−ハ支持体 |
JP2003031643A (ja) * | 2001-07-19 | 2003-01-31 | Hitachi Kokusai Electric Inc | 基板処理装置 |
-
2005
- 2005-10-27 JP JP2005313031A patent/JP4890833B2/ja active Active
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Publication number | Publication date |
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JP2007119838A (ja) | 2007-05-17 |
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