JP4883556B2 - マイクロ波透過窓、マイクロ波プラズマ発生装置及びマイクロ波プラズマ処理装置 - Google Patents

マイクロ波透過窓、マイクロ波プラズマ発生装置及びマイクロ波プラズマ処理装置 Download PDF

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JP4883556B2
JP4883556B2 JP2006036026A JP2006036026A JP4883556B2 JP 4883556 B2 JP4883556 B2 JP 4883556B2 JP 2006036026 A JP2006036026 A JP 2006036026A JP 2006036026 A JP2006036026 A JP 2006036026A JP 4883556 B2 JP4883556 B2 JP 4883556B2
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transmission window
microwave
plasma
processing
processing chamber
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JP2007220700A (ja
JP2007220700A5 (enrdf_load_html_response
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浩嗣 板
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2006036026A 2006-02-14 2006-02-14 マイクロ波透過窓、マイクロ波プラズマ発生装置及びマイクロ波プラズマ処理装置 Expired - Fee Related JP4883556B2 (ja)

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JP2006036026A JP4883556B2 (ja) 2006-02-14 2006-02-14 マイクロ波透過窓、マイクロ波プラズマ発生装置及びマイクロ波プラズマ処理装置

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JP2006036026A JP4883556B2 (ja) 2006-02-14 2006-02-14 マイクロ波透過窓、マイクロ波プラズマ発生装置及びマイクロ波プラズマ処理装置

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JP2007220700A JP2007220700A (ja) 2007-08-30
JP2007220700A5 JP2007220700A5 (enrdf_load_html_response) 2009-04-02
JP4883556B2 true JP4883556B2 (ja) 2012-02-22

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
JP5356390B2 (ja) * 2008-08-08 2013-12-04 東京エレクトロン株式会社 マイクロ波プラズマ発生装置およびマイクロ波プラズマ処理装置
WO2011122422A1 (ja) * 2010-03-30 2011-10-06 東京エレクトロン株式会社 プラズマ処理装置、および誘電体窓
JP6850636B2 (ja) * 2017-03-03 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04173969A (ja) * 1990-11-08 1992-06-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置
JP3155199B2 (ja) * 1996-04-12 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
JP2000012291A (ja) * 1998-06-22 2000-01-14 Sumitomo Metal Ind Ltd プラズマ処理装置
JP4680400B2 (ja) * 2001-02-16 2011-05-11 東京エレクトロン株式会社 プラズマ装置及びその製造方法

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