JP4880793B1 - 放熱部材及び電子機器 - Google Patents
放熱部材及び電子機器 Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000002184 metal Substances 0.000 claims abstract description 89
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002131 composite material Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 238000010292 electrical insulation Methods 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 56
- 238000000034 method Methods 0.000 description 26
- 230000005855 radiation Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000007747 plating Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- -1 nickel metal hydride Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】放熱部材において、柱状ヒートシンク3は、凝固金属体でなり、凝固金属体は、基板1に設けられた孔30を鋳型として孔30の内部で凝固され、孔30を充たし、孔30の側壁面に密着している。しかも、孔30の内部で凝固され、孔30の側壁面に密着した凝固金属体は、巣、空隙、空洞のない緻密な構造を持つようになるから、熱伝導性及び放熱特性に優れた柱状ヒートシンク3となる。
【選択図】図1
Description
(a)放熱特性に優れた熱伝導路を有する放熱部材及びそれを用いた電子機器を提供することができる。
(b)放熱特性に優れた熱伝導路を短時間で、効率よく形成することができる放熱部材及びそれを用いた電子機器を提供することができる。
91 貫通電極
3 柱状ヒートシンク
7 電子部品
Claims (5)
- 基板と、柱状ヒートシンクとを有する放熱部材であって、
前記柱状ヒートシンクは、前記基板に設けられた孔内に流し込まれた溶融金属を、加圧しながら冷却させて凝固させた凝固金属体でなり、
前記凝固金属体は、金属成分とともに、カーボンナノチューブを含み、前記基板に設けられた孔を鋳型として前記孔内で凝固され、前記孔を充たし、前記孔の側壁面に密着しており、
更に、前記基板は、Si基板でなり、
前記柱状ヒートシンクは複数であって、それぞれは、前記基板の面方向に、互いに間隔を隔てて形成され、前記基板との間に設けられた絶縁膜によって前記基板から電気絶縁され、前記基板の一面に導出された一端が、前記基板の前記一面に電気絶縁して形成された金属層に、共通に接続されている、
放熱部材。 - 基板と、柱状ヒートシンクとを有する放熱部材であって、
前記柱状ヒートシンクは、前記基板に設けられた孔内に流し込まれた溶融金属を、加圧しながら冷却させて凝固させた凝固金属体でなり、
前記凝固金属体は、金属成分とともに、カーボンナノチューブを含み、前記基板に設けられた孔を鋳型として前記孔内で凝固され、前記孔を充たし、前記孔の側壁面に密着しており、
更に、前記基板は、少なくとも厚み方向の一面に金属又は合金層を有する複数枚の有機基板を積層したものでなり、前記有機基板の互いに重なり合う積層面に金属又は合金層が位置しており、
前記柱状ヒートシンクは複数であって、それぞれは、前記基板の面方向に互いに間隔を隔てて形成され、前記積層面の前記金属又は合金層に共通に接続されるとともに、前記基板の一面に導出された一端が、前記有機基板の前記一面に形成された金属又は合金層に、共通に接続されている、
放熱部材。 - 放熱部材と、発熱を伴う電子部品とを含む電子機器であって、
前記放熱部材は、請求項1又は2に記載されたものであり、
前記電子部品は、前記放熱部材に取り付けられている、
電子機器。 - 請求項3に記載された電子機器であって、前記電子部品は、能動部品、受動部品またはそれらを組み合わせた複合部品である、電子機器。
- 請求項3に記載された電子機器であって、パーソナル・コンピュータ、携帯電話機、デジタル家電、発光ダイオードを用いた発光装置、画像処理装置、イメージ・センサまたは車載電子機器の何れかである、電子機器。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2011092717A JP4880793B1 (ja) | 2011-04-19 | 2011-04-19 | 放熱部材及び電子機器 |
US13/313,823 US9704793B2 (en) | 2011-01-04 | 2011-12-07 | Substrate for electronic device and electronic device |
EP11275161.5A EP2472577B1 (en) | 2011-01-04 | 2011-12-15 | Substrate for electronic device and electronic device |
TW100148763A TW201234558A (en) | 2011-01-04 | 2011-12-27 | Substrate for electronic machine and electronic machine |
KR1020110146007A KR20120079445A (ko) | 2011-01-04 | 2011-12-29 | 전자기기용 기판 및 전자기기 |
CN2012100011365A CN102593100A (zh) | 2011-01-04 | 2012-01-04 | 电子设备用基板及电子设备 |
Applications Claiming Priority (1)
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JP2011092717A JP4880793B1 (ja) | 2011-04-19 | 2011-04-19 | 放熱部材及び電子機器 |
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JP4880793B1 true JP4880793B1 (ja) | 2012-02-22 |
JP2012227312A JP2012227312A (ja) | 2012-11-15 |
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JP2011092717A Active JP4880793B1 (ja) | 2011-01-04 | 2011-04-19 | 放熱部材及び電子機器 |
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US20210351102A1 (en) * | 2018-10-04 | 2021-11-11 | Showa Denko Materials Co., Ltd. | Heat radiation material, method for producing a heat radiation material, composition, and heat-generating element |
JP7095610B2 (ja) * | 2019-01-30 | 2022-07-05 | 株式会社豊田自動織機 | 電動圧縮機 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004010978A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Ind Ltd | 高熱伝導性放熱材料及びその製造方法 |
JP2004160549A (ja) * | 2002-10-24 | 2004-06-10 | Kyocera Corp | セラミックス−金属複合体およびこれを用いた高熱伝導放熱用基板 |
JP2004281977A (ja) * | 2003-03-19 | 2004-10-07 | Yazaki Corp | 筐体の放熱構造 |
JP2006144030A (ja) * | 2004-11-16 | 2006-06-08 | Bridgestone Corp | 高熱伝導複合材料とその製造方法 |
JP2007123516A (ja) * | 2005-10-27 | 2007-05-17 | Taika:Kk | ヒートスプレッダ、その製造方法及びそれを用いた半導体装置 |
-
2011
- 2011-04-19 JP JP2011092717A patent/JP4880793B1/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004010978A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Ind Ltd | 高熱伝導性放熱材料及びその製造方法 |
JP2004160549A (ja) * | 2002-10-24 | 2004-06-10 | Kyocera Corp | セラミックス−金属複合体およびこれを用いた高熱伝導放熱用基板 |
JP2004281977A (ja) * | 2003-03-19 | 2004-10-07 | Yazaki Corp | 筐体の放熱構造 |
JP2006144030A (ja) * | 2004-11-16 | 2006-06-08 | Bridgestone Corp | 高熱伝導複合材料とその製造方法 |
JP2007123516A (ja) * | 2005-10-27 | 2007-05-17 | Taika:Kk | ヒートスプレッダ、その製造方法及びそれを用いた半導体装置 |
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