JP5709719B2 - 電子部品支持装置及び電子デバイス - Google Patents
電子部品支持装置及び電子デバイス Download PDFInfo
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- JP5709719B2 JP5709719B2 JP2011223051A JP2011223051A JP5709719B2 JP 5709719 B2 JP5709719 B2 JP 5709719B2 JP 2011223051 A JP2011223051 A JP 2011223051A JP 2011223051 A JP2011223051 A JP 2011223051A JP 5709719 B2 JP5709719 B2 JP 5709719B2
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- 239000000758 substrate Substances 0.000 claims description 98
- 239000002114 nanocomposite Substances 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 230000017525 heat dissipation Effects 0.000 claims description 22
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- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 21
- 150000001721 carbon Chemical group 0.000 claims description 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010410 layer Substances 0.000 description 13
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000002131 composite material Substances 0.000 description 8
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- 239000004020 conductor Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
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- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
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- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
21 貫通電極
3 柱状ヒートシンク
6 電子部品
Claims (3)
- 基板と、貫通電極と、複数の柱状ヒートシンクとを含む電子部品支持装置であって、
前記貫通電極は、前記基板を厚み方向に貫通し、一端が前記基板の一面に設けられた電子部品配置領域内に露出しており、
前記柱状ヒートシンクは、前記基板の厚み方向に設けられ、前記電子部品配置領域を取り囲んで、その周りに互いに間隔をおいて配置され、それぞれの一端が、前記基板の他面に付着して一体に設けられた放熱層に共通に接続されており、
更に、前記基板は、Si基板でなり、
前記柱状ヒートシンクは、前記基板との間に設けられた電気絶縁膜又は電気絶縁層によって前記基板から電気絶縁されており、
前記貫通電極及び前記柱状ヒートシンクの少なくとも一方は、nmサイズの炭素原子構造体を含有するナノコンポジット構造を有し、前記基板に設けられたビアを鋳型とする鋳込み成形体でなる、
電子部品支持装置。 - 請求項1に記載された電子部品支持装置であって、前記炭素原子構造体は、ダイヤモンド、フラーレンまたはカーボンナノチューブから選択された少なくとも一種を含有する、電子部品支持装置。
- 電子部品支持装置と、電子部品とを含む電子デバイスであって、
前記電子部品支持装置は、請求項1又は2に記載されたものであり、
前記電子部品は、前記電子部品支持装置の前記電子部品配置領域内に取り付けられている、
電子デバイス。
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JP2011223051A JP5709719B2 (ja) | 2011-01-18 | 2011-10-07 | 電子部品支持装置及び電子デバイス |
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JP2011007519 | 2011-01-18 | ||
JP2011007519 | 2011-01-18 | ||
JP2011223051A JP5709719B2 (ja) | 2011-01-18 | 2011-10-07 | 電子部品支持装置及び電子デバイス |
Publications (3)
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JP2012164956A JP2012164956A (ja) | 2012-08-30 |
JP2012164956A5 JP2012164956A5 (ja) | 2014-10-23 |
JP5709719B2 true JP5709719B2 (ja) | 2015-04-30 |
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JP2011223051A Active JP5709719B2 (ja) | 2011-01-18 | 2011-10-07 | 電子部品支持装置及び電子デバイス |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5521130B1 (ja) | 2012-08-30 | 2014-06-11 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
WO2014038128A1 (ja) * | 2012-09-05 | 2014-03-13 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US9524917B2 (en) * | 2014-04-23 | 2016-12-20 | Optiz, Inc. | Chip level heat dissipation using silicon |
EP3817041B1 (en) * | 2018-06-26 | 2023-08-16 | Kyocera Corporation | Electronic element mounting substrate, electronic device, and electronic module |
CN114614228A (zh) * | 2020-12-09 | 2022-06-10 | 深南电路股份有限公司 | 耦合器及电子设备 |
KR20240076681A (ko) * | 2022-11-22 | 2024-05-30 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 패키지 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294253A (ja) * | 2007-05-25 | 2008-12-04 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
JP2009117489A (ja) * | 2007-11-02 | 2009-05-28 | Sharp Corp | 半導体素子パッケージ及び実装基板 |
JP5357706B2 (ja) * | 2009-11-10 | 2013-12-04 | パナソニック株式会社 | 半導体実装構造体 |
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