JP4868330B2 - 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置 - Google Patents

多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置 Download PDF

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Publication number
JP4868330B2
JP4868330B2 JP2004296890A JP2004296890A JP4868330B2 JP 4868330 B2 JP4868330 B2 JP 4868330B2 JP 2004296890 A JP2004296890 A JP 2004296890A JP 2004296890 A JP2004296890 A JP 2004296890A JP 4868330 B2 JP4868330 B2 JP 4868330B2
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JP
Japan
Prior art keywords
ion
vacuum
source
multivalent
superconducting magnet
Prior art date
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Expired - Fee Related
Application number
JP2004296890A
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English (en)
Japanese (ja)
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JP2006108054A5 (enExample
JP2006108054A (ja
Inventor
誠 櫻井
史晴 中嶌
卓典 福本
信行 中村
俊介 大谷
信郎 益子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Publication date
Application filed by Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to JP2004296890A priority Critical patent/JP4868330B2/ja
Priority to PCT/JP2005/007284 priority patent/WO2006040850A1/ja
Priority to US11/576,945 priority patent/US7544952B2/en
Publication of JP2006108054A publication Critical patent/JP2006108054A/ja
Publication of JP2006108054A5 publication Critical patent/JP2006108054A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2004296890A 2004-10-08 2004-10-08 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置 Expired - Fee Related JP4868330B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004296890A JP4868330B2 (ja) 2004-10-08 2004-10-08 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置
PCT/JP2005/007284 WO2006040850A1 (ja) 2004-10-08 2005-04-08 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置
US11/576,945 US7544952B2 (en) 2004-10-08 2005-04-08 Multivalent ion generating source and charged particle beam apparatus using such ion generating source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004296890A JP4868330B2 (ja) 2004-10-08 2004-10-08 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置

Publications (3)

Publication Number Publication Date
JP2006108054A JP2006108054A (ja) 2006-04-20
JP2006108054A5 JP2006108054A5 (enExample) 2007-07-05
JP4868330B2 true JP4868330B2 (ja) 2012-02-01

Family

ID=36148151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004296890A Expired - Fee Related JP4868330B2 (ja) 2004-10-08 2004-10-08 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置

Country Status (3)

Country Link
US (1) US7544952B2 (enExample)
JP (1) JP4868330B2 (enExample)
WO (1) WO2006040850A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
EP3905300A3 (en) 2009-05-15 2022-02-23 Alpha Source, Inc. Ecr particle beam source apparatus
CN102012476B (zh) * 2010-07-27 2012-10-10 中国科学院等离子体物理研究所 低温超导绝缘帕邢放电试验装置
JP2013239303A (ja) * 2012-05-14 2013-11-28 National Institutes Of Natural Sciences 電子ビーム多価イオン源における多価イオン生成方法
US9984847B2 (en) 2013-03-15 2018-05-29 Mars Tohken Solution Co., Ltd. Open-type X-ray tube comprising field emission type electron gun and X-ray inspection apparatus using the same
JP6218403B2 (ja) * 2013-03-15 2017-10-25 株式会社マーストーケンソリューション 電界放射型電子銃を備えたｘ線管及びそれを用いたｘ線検査装置
US10297413B2 (en) 2015-03-10 2019-05-21 North-Western International Cleaner Production Centre Method and device for the production of highly charged ions
CN110868790A (zh) * 2019-11-26 2020-03-06 成都理工大学工程技术学院 一种负氢离子引出装置
CN111712033B (zh) * 2020-06-23 2022-09-27 中国科学院近代物理研究所 一种级联漂移管电势阱装置及其使用方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121735A (ja) * 1982-12-28 1984-07-13 Toshiba Corp イオン発生装置
FR2595868B1 (fr) * 1986-03-13 1988-05-13 Commissariat Energie Atomique Source d'ions a resonance cyclotronique electronique a injection coaxiale d'ondes electromagnetiques
JP2733243B2 (ja) 1988-03-31 1998-03-30 科学技術振興事業団 イオンソースチャンバー
FR2676593B1 (fr) * 1991-05-14 1997-01-03 Commissariat Energie Atomique Source d'ions a resonance cyclotronique electronique.
JPH05275408A (ja) * 1992-03-24 1993-10-22 Nippon Steel Corp 平面状基板の洗浄装置
JPH05275048A (ja) * 1992-03-26 1993-10-22 Fine Ceramics Center 酸素イオン注入装置
JPH07262946A (ja) 1994-03-22 1995-10-13 Mitsubishi Electric Corp イオン源
JP3368695B2 (ja) * 1994-10-05 2003-01-20 日新電機株式会社 イオン源
JPH11233335A (ja) * 1997-12-08 1999-08-27 Mitsubishi Heavy Ind Ltd 超伝導コイル装置
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
JP2004087542A (ja) * 2002-08-23 2004-03-18 Sumitomo Heavy Ind Ltd カスプ磁場発生用超伝導磁石装置
JP2004111330A (ja) 2002-09-20 2004-04-08 Aisin Seiki Co Ltd 溶融バルク高温超伝導体を備えた装置
US6783059B2 (en) 2002-12-23 2004-08-31 General Electric Company Conduction cooled passively-shielded MRI magnet

Also Published As

Publication number Publication date
US20080087842A1 (en) 2008-04-17
US7544952B2 (en) 2009-06-09
WO2006040850A1 (ja) 2006-04-20
JP2006108054A (ja) 2006-04-20

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