JP4860343B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4860343B2
JP4860343B2 JP2006132109A JP2006132109A JP4860343B2 JP 4860343 B2 JP4860343 B2 JP 4860343B2 JP 2006132109 A JP2006132109 A JP 2006132109A JP 2006132109 A JP2006132109 A JP 2006132109A JP 4860343 B2 JP4860343 B2 JP 4860343B2
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JP
Japan
Prior art keywords
electrode layer
layer
film
oxide
light
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Expired - Fee Related
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JP2006132109A
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English (en)
Japanese (ja)
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JP2006344584A5 (https=
JP2006344584A (ja
Inventor
欣聡 及川
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006132109A priority Critical patent/JP4860343B2/ja
Publication of JP2006344584A publication Critical patent/JP2006344584A/ja
Publication of JP2006344584A5 publication Critical patent/JP2006344584A5/ja
Application granted granted Critical
Publication of JP4860343B2 publication Critical patent/JP4860343B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2006132109A 2005-05-13 2006-05-11 表示装置の作製方法 Expired - Fee Related JP4860343B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006132109A JP4860343B2 (ja) 2005-05-13 2006-05-11 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005141899 2005-05-13
JP2005141899 2005-05-13
JP2006132109A JP4860343B2 (ja) 2005-05-13 2006-05-11 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006344584A JP2006344584A (ja) 2006-12-21
JP2006344584A5 JP2006344584A5 (https=) 2009-05-21
JP4860343B2 true JP4860343B2 (ja) 2012-01-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006132109A Expired - Fee Related JP4860343B2 (ja) 2005-05-13 2006-05-11 表示装置の作製方法

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JP (1) JP4860343B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5352878B2 (ja) * 2008-03-31 2013-11-27 公立大学法人高知工科大学 表示用基板及びその製造方法並びに表示装置
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8735874B2 (en) * 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
KR102304724B1 (ko) * 2014-12-19 2021-09-27 삼성디스플레이 주식회사 박막트랜지스터 기판, 이를 포함하는 디스플레이 장치, 박막트랜지스터 기판 제조방법 및 이를 이용한 디스플레이 장치 제조방법
KR102367250B1 (ko) * 2015-09-17 2022-02-25 삼성디스플레이 주식회사 유기 발광 소자
KR102505880B1 (ko) * 2017-09-06 2023-03-06 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조방법, 이를 포함하는 표시 장치
TWI714979B (zh) 2018-03-19 2021-01-01 日商理光股份有限公司 無機電致發光元件、顯示元件、影像顯示裝置及系統

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4187315B2 (ja) * 1998-08-07 2008-11-26 帝人株式会社 液晶表示用透明導電積層体の製造方法
JP2003016858A (ja) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd インジウムスズ酸化膜の製造方法
JP4917725B2 (ja) * 2001-09-26 2012-04-18 東ソー株式会社 透明導電膜およびその製造方法並びにその用途
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ
JP2005258115A (ja) * 2004-03-12 2005-09-22 Idemitsu Kosan Co Ltd 薄膜トランジスタ型基板及び薄膜トランジスタ型液晶表示装置及び薄膜トランジスタ型基板の製造方法

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Publication number Publication date
JP2006344584A (ja) 2006-12-21

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