JP4860293B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4860293B2 JP4860293B2 JP2006038853A JP2006038853A JP4860293B2 JP 4860293 B2 JP4860293 B2 JP 4860293B2 JP 2006038853 A JP2006038853 A JP 2006038853A JP 2006038853 A JP2006038853 A JP 2006038853A JP 4860293 B2 JP4860293 B2 JP 4860293B2
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- 238000000034 method Methods 0.000 title claims description 53
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- 239000010410 layer Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 48
- 239000011229 interlayer Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 35
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 46
- 229910052710 silicon Inorganic materials 0.000 description 46
- 239000010703 silicon Substances 0.000 description 46
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 238000003491 array Methods 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
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- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006038853A JP4860293B2 (ja) | 1999-02-12 | 2006-02-16 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3366799 | 1999-02-12 | ||
| JP1999033667 | 1999-02-12 | ||
| JP2006038853A JP4860293B2 (ja) | 1999-02-12 | 2006-02-16 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000032888A Division JP4372939B2 (ja) | 1999-02-12 | 2000-02-10 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006157046A JP2006157046A (ja) | 2006-06-15 |
| JP2006157046A5 JP2006157046A5 (cg-RX-API-DMAC7.html) | 2009-10-22 |
| JP4860293B2 true JP4860293B2 (ja) | 2012-01-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006038853A Expired - Fee Related JP4860293B2 (ja) | 1999-02-12 | 2006-02-16 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4860293B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4993292B2 (ja) * | 2007-07-18 | 2012-08-08 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
| US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| TWI611567B (zh) | 2013-02-27 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置、驅動電路及顯示裝置 |
| KR102703645B1 (ko) * | 2018-10-22 | 2024-09-06 | 엘지디스플레이 주식회사 | 중첩된 박막 트랜지스터들을 포함하는 표시장치 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800956B2 (ja) * | 1992-03-10 | 1998-09-21 | シャープ株式会社 | アクティブマトリクス基板 |
| JP2924506B2 (ja) * | 1992-10-27 | 1999-07-26 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の画素構造 |
| JP3212060B2 (ja) * | 1993-09-20 | 2001-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP3267011B2 (ja) * | 1993-11-04 | 2002-03-18 | セイコーエプソン株式会社 | 液晶表示装置 |
| JPH09171196A (ja) * | 1995-10-16 | 1997-06-30 | Sharp Corp | 液晶表示装置 |
| JPH1056184A (ja) * | 1996-06-04 | 1998-02-24 | Semiconductor Energy Lab Co Ltd | 半導体集積回路およびその作製方法 |
| JP4401448B2 (ja) * | 1997-02-24 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2006
- 2006-02-16 JP JP2006038853A patent/JP4860293B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006157046A (ja) | 2006-06-15 |
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