JP4860175B2 - 配線の作製方法、半導体装置の作製方法 - Google Patents
配線の作製方法、半導体装置の作製方法 Download PDFInfo
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- JP4860175B2 JP4860175B2 JP2005130163A JP2005130163A JP4860175B2 JP 4860175 B2 JP4860175 B2 JP 4860175B2 JP 2005130163 A JP2005130163 A JP 2005130163A JP 2005130163 A JP2005130163 A JP 2005130163A JP 4860175 B2 JP4860175 B2 JP 4860175B2
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Images
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Description
但し、本発明は多くの異なる態様で実施することが可能であり、本発明の趣旨及びその範囲から 逸脱することなくその形態及び詳細を様々に変更し得ることは当業者であれば容易に 理解される。従って、本実施の形態の記載内容に限定して解釈されるものではない。なお、実施の形態を説明するための全図において、同一部分又は同様な機能を有する部分には同一の符号を付し、その繰り返しの説明は省略する。
本実施の形態では、第1の条件によるエッチング工程及び第2の条件によるエッチング工程によって、側面に湾曲面を有する配線で形成される配線基板の作製方法を、図1、図3、及び図7を用いて説明する。
本実施の形態では、実施の形態1とは異なるエッチング条件により、側面に湾曲面を有する配線で形成される配線基板の作製方法を、図1、図4、及び図7を用いて説明する。
本実施の形態では、実施の形態1及び実施の形態2とは異なるエッチング工程により、側面に複数の傾斜面を有する配線で形成される配線基板の作製方法を、図2、図5、及び図8を用いて説明する。
(実施の形態4)
本実施の形態では、実施の形態3及とは異なるエッチング条件により、側面に複数の傾斜面を有する配線で形成される配線基板の作製方法を、図2、図6及び図8を用いて説明する。
素子が設けられている。
Claims (4)
- 絶縁表面上に導電層を形成する工程と、
前記導電層上にマスクパターンを形成する工程と、
第1のエッチングを行うことによって、前記導電層及び前記マスクパターンに第1の加工を施し、前記導電層の露出表面の一部をエッチングする工程と、
水又はオゾン水を用いて前記導電層の表面を洗浄し、前記導電層の表面に酸化物が形成される工程と、
第2のエッチングを行うことによって、前記酸化物をエッチングするとともに、前記導電層及び前記マスクパターンに第2の加工を施し、前記絶縁表面を露出させる工程と、
第3のエッチングを行うことによって、前記導電層及び前記マスクパターンに第3の加工を施し、配線を形成する工程と、
前記マスクパターンを除去する工程と、を有し、
前記第3のエッチングは、前記第1のエッチング及び前記第2のエッチングと比較して、前記導電層に対する前記マスクパターンの選択比が大きい条件で行われ、
前記第1の加工の際に、前記マスクパターンの端部下方において、側部の断面がテーパー形状の凸部が形成されることを特徴とする配線の作製方法。 - 絶縁表面上に導電層を形成する工程と、
前記導電層上にマスクパターンを形成する工程と、
第1のエッチングを行うことによって、前記導電層に第1の加工を施し、前記導電層の露出表面の一部をエッチングする工程と、
水又はオゾン水を用いて前記導電層の表面を洗浄し、前記導電層の表面に酸化物が形成される工程と、
第2のエッチングを行うことによって、前記酸化物をエッチングするとともに、前記導電層及び前記マスクパターンに第2の加工を施し、配線を形成する工程と、
前記マスクパターンを除去する工程と、を有し、
前記第2のエッチングは、前記第1のエッチングと比較して、前記導電層に対する前記マスクパターンの選択比が大きい条件で行われ、
前記第1の加工の際に、前記マスクパターンの端部下方において、側部の断面が垂直な凸部が形成されることを特徴とする配線の作製方法。 - 半導体素子上に第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に導電層を形成する工程と、
前記導電層上にマスクパターンを形成する工程と、
第1のエッチングを行うことによって、前記導電層及び前記マスクパターンに第1の加工を施し、前記導電層の露出表面の一部をエッチングする工程と、
水又はオゾン水を用いて前記導電層の表面を洗浄し、前記導電層の表面に酸化物が形成される工程と、
第2のエッチングを行うことによって、前記酸化物をエッチングするとともに、前記導電層及び前記マスクパターンに第2の加工を施し、前記第1の絶縁膜を露出させる工程と、
第3のエッチングを行うことによって、前記導電層及び前記マスクパターンに第3の加工を施し、配線を形成する工程と、
前記マスクパターンを除去する工程と、
前記配線上に第2の絶縁膜を形成する工程と、を有し、
前記第3のエッチングは、前記第1のエッチング及び前記第2のエッチングと比較して、前記導電層に対する前記マスクパターンの選択比が大きい条件で行われ、
前記第1の加工の際に、前記マスクパターンの端部下方において、側部の断面がテーパー形状の凸部が形成されることを特徴とする半導体装置の作製方法。 - 半導体素子上に第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に導電層を形成する工程と、
前記導電層上にマスクパターンを形成する工程と、
第1のエッチングを行うことによって、前記導電層に第1の加工を施し、前記導電層の露出表面の一部をエッチングする工程と、
水又はオゾン水を用いて前記導電層の表面を洗浄し、前記導電層の表面に酸化物が形成される工程と、
第2のエッチングを行うことによって、前記酸化物をエッチングするとともに、前記導電層及び前記マスクパターンに第2の加工を施し、配線を形成する工程と、
前記マスクパターンを除去する工程と、
前記配線上に第2の絶縁膜を形成する工程と、を有し、
前記第2のエッチングは、前記第1のエッチングと比較して、前記導電層に対する前記マスクパターンの選択比が大きい条件で行われ、
前記第1の加工の際に、前記マスクパターンの端部下方において、側部の断面が垂直な凸部が形成されることを特徴とする半導体装置の作製方法。
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