JP4838308B2 - アクティブポストディストーション線形化を有する増幅器 - Google Patents

アクティブポストディストーション線形化を有する増幅器 Download PDF

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Publication number
JP4838308B2
JP4838308B2 JP2008525115A JP2008525115A JP4838308B2 JP 4838308 B2 JP4838308 B2 JP 4838308B2 JP 2008525115 A JP2008525115 A JP 2008525115A JP 2008525115 A JP2008525115 A JP 2008525115A JP 4838308 B2 JP4838308 B2 JP 4838308B2
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Prior art keywords
transistor
electrically coupled
drain
transistors
lna
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Japanese (ja)
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JP2009504096A (ja
Inventor
キム、ナムソ
バーネット、ケネス・チャールズ
アパリン、ブラディミア
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
JP2008525115A 2005-08-02 2006-07-31 アクティブポストディストーション線形化を有する増幅器 Active JP4838308B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US70525605P 2005-08-02 2005-08-02
US60/705,256 2005-08-02
US11/285,949 2005-11-22
US11/285,949 US7902925B2 (en) 2005-08-02 2005-11-22 Amplifier with active post-distortion linearization
PCT/US2006/029905 WO2007016552A1 (en) 2005-08-02 2006-07-31 Amplifier with active post-distortion linearization

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011152109A Division JP5350440B2 (ja) 2005-08-02 2011-07-08 アクティブポストディストーション線形化を有する増幅器

Publications (2)

Publication Number Publication Date
JP2009504096A JP2009504096A (ja) 2009-01-29
JP4838308B2 true JP4838308B2 (ja) 2011-12-14

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008525115A Active JP4838308B2 (ja) 2005-08-02 2006-07-31 アクティブポストディストーション線形化を有する増幅器
JP2011152109A Active JP5350440B2 (ja) 2005-08-02 2011-07-08 アクティブポストディストーション線形化を有する増幅器

Family Applications After (1)

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JP2011152109A Active JP5350440B2 (ja) 2005-08-02 2011-07-08 アクティブポストディストーション線形化を有する増幅器

Country Status (8)

Country Link
US (1) US7902925B2 (enExample)
EP (1) EP1911154B1 (enExample)
JP (2) JP4838308B2 (enExample)
KR (1) KR101092264B1 (enExample)
CN (1) CN101273525B (enExample)
AT (1) ATE525802T1 (enExample)
TW (1) TW200723680A (enExample)
WO (1) WO2007016552A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10911007B2 (en) 2018-06-29 2021-02-02 Kabushiki Kaisha Toshiba High-frequency amplifier circuitry and semiconductor device
US10965256B2 (en) 2019-02-07 2021-03-30 Kabushiki Kaisha Toshiba High-frequency amplifier circuitry and semiconductor device

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KR100631973B1 (ko) * 2005-03-02 2006-10-11 삼성전기주식회사 가변이득 광대역 증폭기
US7889007B2 (en) * 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US8035447B2 (en) * 2007-08-21 2011-10-11 Qualcomm, Incorporated Active circuits with load linearization
US7746169B2 (en) * 2008-02-06 2010-06-29 Qualcomm, Incorporated LNA having a post-distortion mode and a high-gain mode
US8331897B2 (en) * 2008-04-07 2012-12-11 Qualcomm Incorporated Highly linear embedded filtering passive mixer
GB0807149D0 (en) * 2008-04-18 2008-05-21 Elonics Ltd Low noise amplifier
US7936220B2 (en) * 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
WO2010082235A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 可変利得増幅器およびそれを備えた高周波信号受信装置
US7876158B2 (en) * 2009-04-24 2011-01-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. High gain stacked cascade amplifier with current compensation to reduce gain compression
TWM377794U (en) * 2009-09-18 2010-04-01 Princeton Technology Corp Low noise amplifier and radio frequency signal receiving system
US8138835B2 (en) 2010-02-11 2012-03-20 Qualcomm, Incorporated Wide band LNA with noise canceling
US8842582B2 (en) * 2010-06-04 2014-09-23 Qualcomm Incorporated Reducing power consumption by taking advantage of superior in-circuit duplexer performance
US8570106B2 (en) 2011-05-13 2013-10-29 Qualcomm, Incorporated Positive feedback common gate low noise amplifier
US8373503B1 (en) * 2011-12-12 2013-02-12 Linear Technology Corporation Third order intermodulation cancellation for RF transconductors
CN102571014B (zh) * 2012-02-10 2014-03-12 中国科学院微电子研究所 一种电压型自动增益控制电路
US8970304B2 (en) * 2013-01-11 2015-03-03 Qualcomm Incorporated Hybrid amplifier
US9106185B2 (en) 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching
US9035697B2 (en) 2013-03-15 2015-05-19 Qualcomm Incorporated Split amplifiers with improved linearity
US9124228B2 (en) * 2013-04-04 2015-09-01 Qualcomm Incorporated Amplifiers with boosted or deboosted source degeneration inductance
US9178473B2 (en) * 2013-12-19 2015-11-03 Qualcomm Incorporated Distortion cancellation for low noise amplifier (LNA) non-linear second order products
EP2913922A1 (en) 2014-02-28 2015-09-02 Telefonaktiebolaget L M Ericsson (publ) A low noise amplifier circuit
US9385901B2 (en) * 2014-11-13 2016-07-05 Qualcomm Incorporated Receiver front end architecture for intra band carrier aggregation
US9698736B2 (en) 2014-12-30 2017-07-04 Skyworks Solutions, Inc. Compression control through power amplifier load adjustment
KR101719313B1 (ko) * 2015-06-19 2017-04-05 (주)에프씨아이 멀티밴드를 위한 고선형 특성을 갖는 저잡음 증폭기
US10003451B2 (en) * 2015-10-08 2018-06-19 Macom Technology Solutions Holdings, Inc. Dual-input, high power handling, power combining LNA for full duplex communications systems
CN112075059A (zh) * 2018-03-30 2020-12-11 苹果公司 自评估高频、带宽和动态范围蜂窝极性发射信号保真
TWI643449B (zh) * 2018-04-27 2018-12-01 立積電子股份有限公司 放大器
KR102538339B1 (ko) 2019-01-07 2023-05-31 삼성전자 주식회사 후왜곡을 이용한 선형화 증폭기
US10985951B2 (en) 2019-03-15 2021-04-20 The Research Foundation for the State University Integrating Volterra series model and deep neural networks to equalize nonlinear power amplifiers
KR20230112455A (ko) 2022-01-20 2023-07-27 삼성전자주식회사 무선 통신 시스템에서 송신단의 비선형성을 보상하기 위한 비선형성 상태 정보 전송 방법 및 장치

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JPS63132509A (ja) * 1986-09-02 1988-06-04 テクトロニックス・インコーポレイテッド Ｆｅｔ増幅器
JPH08242125A (ja) * 1994-12-23 1996-09-17 Motorola Inc 増幅器回路
JP2002525951A (ja) * 1998-09-22 2002-08-13 クゥアルコム・インコーポレイテッド 高効率スイッチド利得パワー増幅器
US6473595B1 (en) * 1998-12-01 2002-10-29 Electronics And Telecommunications Research Institute RF active balun circuit for improving small-signal linearity
JP2003198280A (ja) * 2001-12-13 2003-07-11 Agilent Technol Inc 側路スイッチ回路付き増幅器
JP2005124175A (ja) * 2003-09-24 2005-05-12 Matsushita Electric Ind Co Ltd 増幅装置および周波数変換装置
US20050176399A1 (en) * 2004-02-11 2005-08-11 Vladimir Aparin Field effect transistor amplifier with linearization

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JPH04245707A (ja) * 1991-01-31 1992-09-02 Nec Corp 歪補償回路
JPH0897644A (ja) 1994-09-22 1996-04-12 Clarion Co Ltd Ｊ−ｆｅｔ増幅回路
IL144811A (en) 2000-08-11 2005-12-18 Ibm Amplifier with suppression of harmonics
JP2002111412A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 増幅回路
US6801089B2 (en) * 2001-05-04 2004-10-05 Sequoia Communications Continuous variable-gain low-noise amplifier
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US7015753B2 (en) * 2003-06-02 2006-03-21 Edo Communications And Countermeasures Systems Inc. Digital signal processing based implementation of a feed forward amplifier
US7071779B2 (en) * 2004-06-17 2006-07-04 Winbond Electronics, Corp. Monolithic CMOS differential LNA with enhanced linearity

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JPS63132509A (ja) * 1986-09-02 1988-06-04 テクトロニックス・インコーポレイテッド Ｆｅｔ増幅器
JPH08242125A (ja) * 1994-12-23 1996-09-17 Motorola Inc 増幅器回路
JP2002525951A (ja) * 1998-09-22 2002-08-13 クゥアルコム・インコーポレイテッド 高効率スイッチド利得パワー増幅器
US6473595B1 (en) * 1998-12-01 2002-10-29 Electronics And Telecommunications Research Institute RF active balun circuit for improving small-signal linearity
JP2003198280A (ja) * 2001-12-13 2003-07-11 Agilent Technol Inc 側路スイッチ回路付き増幅器
JP2005124175A (ja) * 2003-09-24 2005-05-12 Matsushita Electric Ind Co Ltd 増幅装置および周波数変換装置
US20050176399A1 (en) * 2004-02-11 2005-08-11 Vladimir Aparin Field effect transistor amplifier with linearization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10911007B2 (en) 2018-06-29 2021-02-02 Kabushiki Kaisha Toshiba High-frequency amplifier circuitry and semiconductor device
US10965256B2 (en) 2019-02-07 2021-03-30 Kabushiki Kaisha Toshiba High-frequency amplifier circuitry and semiconductor device

Also Published As

Publication number Publication date
JP2011254499A (ja) 2011-12-15
EP1911154B1 (en) 2011-09-21
CN101273525A (zh) 2008-09-24
KR20080031999A (ko) 2008-04-11
CN101273525B (zh) 2012-04-11
US20070030076A1 (en) 2007-02-08
EP1911154A1 (en) 2008-04-16
JP2009504096A (ja) 2009-01-29
TW200723680A (en) 2007-06-16
WO2007016552A1 (en) 2007-02-08
KR101092264B1 (ko) 2011-12-13
US7902925B2 (en) 2011-03-08
ATE525802T1 (de) 2011-10-15
JP5350440B2 (ja) 2013-11-27

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