KR101092264B1 - 액티브 포스트-왜곡 선형화된 증폭기 - Google Patents

액티브 포스트-왜곡 선형화된 증폭기 Download PDF

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KR101092264B1
KR101092264B1 KR1020087005130A KR20087005130A KR101092264B1 KR 101092264 B1 KR101092264 B1 KR 101092264B1 KR 1020087005130 A KR1020087005130 A KR 1020087005130A KR 20087005130 A KR20087005130 A KR 20087005130A KR 101092264 B1 KR101092264 B1 KR 101092264B1
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transistor
signal
electrically connected
drain
lna
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KR20080031999A (ko
Inventor
김남수
케네스 찰스 바넷
블라디미르 아파린
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
KR1020087005130A 2005-08-02 2006-07-31 액티브 포스트-왜곡 선형화된 증폭기 Active KR101092264B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US70525605P 2005-08-02 2005-08-02
US60/705,256 2005-08-02
US11/285,949 2005-11-22
US11/285,949 US7902925B2 (en) 2005-08-02 2005-11-22 Amplifier with active post-distortion linearization
PCT/US2006/029905 WO2007016552A1 (en) 2005-08-02 2006-07-31 Amplifier with active post-distortion linearization

Publications (2)

Publication Number Publication Date
KR20080031999A KR20080031999A (ko) 2008-04-11
KR101092264B1 true KR101092264B1 (ko) 2011-12-13

Family

ID=37310399

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087005130A Active KR101092264B1 (ko) 2005-08-02 2006-07-31 액티브 포스트-왜곡 선형화된 증폭기

Country Status (8)

Country Link
US (1) US7902925B2 (enExample)
EP (1) EP1911154B1 (enExample)
JP (2) JP4838308B2 (enExample)
KR (1) KR101092264B1 (enExample)
CN (1) CN101273525B (enExample)
AT (1) ATE525802T1 (enExample)
TW (1) TW200723680A (enExample)
WO (1) WO2007016552A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150100943A (ko) * 2013-01-11 2015-09-02 퀄컴 인코포레이티드 하이브리드 증폭기
KR20160150252A (ko) * 2015-06-19 2016-12-29 (주)에프씨아이 멀티밴드를 위한 고선형 특성을 갖는 저잡음 증폭기

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KR100631973B1 (ko) * 2005-03-02 2006-10-11 삼성전기주식회사 가변이득 광대역 증폭기
US7889007B2 (en) * 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US8035447B2 (en) * 2007-08-21 2011-10-11 Qualcomm, Incorporated Active circuits with load linearization
US7746169B2 (en) * 2008-02-06 2010-06-29 Qualcomm, Incorporated LNA having a post-distortion mode and a high-gain mode
US8331897B2 (en) * 2008-04-07 2012-12-11 Qualcomm Incorporated Highly linear embedded filtering passive mixer
GB0807149D0 (en) * 2008-04-18 2008-05-21 Elonics Ltd Low noise amplifier
US7936220B2 (en) * 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
WO2010082235A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 可変利得増幅器およびそれを備えた高周波信号受信装置
US7876158B2 (en) * 2009-04-24 2011-01-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. High gain stacked cascade amplifier with current compensation to reduce gain compression
TWM377794U (en) * 2009-09-18 2010-04-01 Princeton Technology Corp Low noise amplifier and radio frequency signal receiving system
US8138835B2 (en) 2010-02-11 2012-03-20 Qualcomm, Incorporated Wide band LNA with noise canceling
US8842582B2 (en) * 2010-06-04 2014-09-23 Qualcomm Incorporated Reducing power consumption by taking advantage of superior in-circuit duplexer performance
US8570106B2 (en) 2011-05-13 2013-10-29 Qualcomm, Incorporated Positive feedback common gate low noise amplifier
US8373503B1 (en) * 2011-12-12 2013-02-12 Linear Technology Corporation Third order intermodulation cancellation for RF transconductors
CN102571014B (zh) * 2012-02-10 2014-03-12 中国科学院微电子研究所 一种电压型自动增益控制电路
US9106185B2 (en) 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching
US9035697B2 (en) 2013-03-15 2015-05-19 Qualcomm Incorporated Split amplifiers with improved linearity
US9124228B2 (en) * 2013-04-04 2015-09-01 Qualcomm Incorporated Amplifiers with boosted or deboosted source degeneration inductance
US9178473B2 (en) * 2013-12-19 2015-11-03 Qualcomm Incorporated Distortion cancellation for low noise amplifier (LNA) non-linear second order products
EP2913922A1 (en) 2014-02-28 2015-09-02 Telefonaktiebolaget L M Ericsson (publ) A low noise amplifier circuit
US9385901B2 (en) * 2014-11-13 2016-07-05 Qualcomm Incorporated Receiver front end architecture for intra band carrier aggregation
US9698736B2 (en) 2014-12-30 2017-07-04 Skyworks Solutions, Inc. Compression control through power amplifier load adjustment
US10003451B2 (en) * 2015-10-08 2018-06-19 Macom Technology Solutions Holdings, Inc. Dual-input, high power handling, power combining LNA for full duplex communications systems
CN112075059A (zh) * 2018-03-30 2020-12-11 苹果公司 自评估高频、带宽和动态范围蜂窝极性发射信号保真
TWI643449B (zh) * 2018-04-27 2018-12-01 立積電子股份有限公司 放大器
JP2020005177A (ja) 2018-06-29 2020-01-09 株式会社東芝 高周波増幅回路
KR102538339B1 (ko) 2019-01-07 2023-05-31 삼성전자 주식회사 후왜곡을 이용한 선형화 증폭기
JP2020129721A (ja) 2019-02-07 2020-08-27 株式会社東芝 高周波増幅回路
US10985951B2 (en) 2019-03-15 2021-04-20 The Research Foundation for the State University Integrating Volterra series model and deep neural networks to equalize nonlinear power amplifiers
KR20230112455A (ko) 2022-01-20 2023-07-27 삼성전자주식회사 무선 통신 시스템에서 송신단의 비선형성을 보상하기 위한 비선형성 상태 정보 전송 방법 및 장치

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KR100281647B1 (ko) 1998-12-01 2001-02-15 정선종 능동소자 발룬을 이용한 소신호 선형성 향상을 위한 알에프 집적회로
KR100388373B1 (ko) 1994-12-23 2003-09-19 모토로라 인코포레이티드 증폭기

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JP2005124175A (ja) * 2003-09-24 2005-05-12 Matsushita Electric Ind Co Ltd 増幅装置および周波数変換装置
US7853235B2 (en) * 2004-02-11 2010-12-14 Qualcomm, Incorporated Field effect transistor amplifier with linearization
US7071779B2 (en) * 2004-06-17 2006-07-04 Winbond Electronics, Corp. Monolithic CMOS differential LNA with enhanced linearity

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KR100388373B1 (ko) 1994-12-23 2003-09-19 모토로라 인코포레이티드 증폭기
KR100281647B1 (ko) 1998-12-01 2001-02-15 정선종 능동소자 발룬을 이용한 소신호 선형성 향상을 위한 알에프 집적회로

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150100943A (ko) * 2013-01-11 2015-09-02 퀄컴 인코포레이티드 하이브리드 증폭기
KR101627275B1 (ko) * 2013-01-11 2016-06-03 퀄컴 인코포레이티드 하이브리드 증폭기
KR20160150252A (ko) * 2015-06-19 2016-12-29 (주)에프씨아이 멀티밴드를 위한 고선형 특성을 갖는 저잡음 증폭기
KR101719313B1 (ko) * 2015-06-19 2017-04-05 (주)에프씨아이 멀티밴드를 위한 고선형 특성을 갖는 저잡음 증폭기

Also Published As

Publication number Publication date
JP4838308B2 (ja) 2011-12-14
JP2011254499A (ja) 2011-12-15
EP1911154B1 (en) 2011-09-21
CN101273525A (zh) 2008-09-24
KR20080031999A (ko) 2008-04-11
CN101273525B (zh) 2012-04-11
US20070030076A1 (en) 2007-02-08
EP1911154A1 (en) 2008-04-16
JP2009504096A (ja) 2009-01-29
TW200723680A (en) 2007-06-16
WO2007016552A1 (en) 2007-02-08
US7902925B2 (en) 2011-03-08
ATE525802T1 (de) 2011-10-15
JP5350440B2 (ja) 2013-11-27

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