JP4831607B2 - パターン欠陥検査方法及びフォトマスクの製造方法 - Google Patents

パターン欠陥検査方法及びフォトマスクの製造方法 Download PDF

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Publication number
JP4831607B2
JP4831607B2 JP2006096756A JP2006096756A JP4831607B2 JP 4831607 B2 JP4831607 B2 JP 4831607B2 JP 2006096756 A JP2006096756 A JP 2006096756A JP 2006096756 A JP2006096756 A JP 2006096756A JP 4831607 B2 JP4831607 B2 JP 4831607B2
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JP
Japan
Prior art keywords
pattern
photomask
light
inspection
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006096756A
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English (en)
Japanese (ja)
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JP2007271425A (ja
Inventor
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
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Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2006096756A priority Critical patent/JP4831607B2/ja
Priority to TW096106686A priority patent/TW200736601A/zh
Priority to CN2007100890910A priority patent/CN101046624B/zh
Priority to KR1020070031279A priority patent/KR20070098695A/ko
Publication of JP2007271425A publication Critical patent/JP2007271425A/ja
Application granted granted Critical
Publication of JP4831607B2 publication Critical patent/JP4831607B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2006096756A 2006-03-31 2006-03-31 パターン欠陥検査方法及びフォトマスクの製造方法 Expired - Fee Related JP4831607B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006096756A JP4831607B2 (ja) 2006-03-31 2006-03-31 パターン欠陥検査方法及びフォトマスクの製造方法
TW096106686A TW200736601A (en) 2006-03-31 2007-02-27 Pattern defect inspecting apparatus, pattern defect inspecting method, and method of producing a photomask
CN2007100890910A CN101046624B (zh) 2006-03-31 2007-03-29 图案缺陷检查装置、图案缺陷检查方法及光掩模的制造方法
KR1020070031279A KR20070098695A (ko) 2006-03-31 2007-03-30 패턴결함 검사장치, 패턴결함 검사방법 및 포토마스크의제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006096756A JP4831607B2 (ja) 2006-03-31 2006-03-31 パターン欠陥検査方法及びフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
JP2007271425A JP2007271425A (ja) 2007-10-18
JP4831607B2 true JP4831607B2 (ja) 2011-12-07

Family

ID=38674381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006096756A Expired - Fee Related JP4831607B2 (ja) 2006-03-31 2006-03-31 パターン欠陥検査方法及びフォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP4831607B2 (zh)
KR (1) KR20070098695A (zh)
CN (1) CN101046624B (zh)
TW (1) TW200736601A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009156687A (ja) * 2007-12-26 2009-07-16 Hoya Corp フォトマスクの欠陥検査装置、フォトマスクの欠陥検査方法及びフォトマスクの製造方法
JP5245482B2 (ja) * 2008-03-21 2013-07-24 株式会社ニコン 基板検査装置、およびマスク用基板の製造方法
KR20100042924A (ko) 2008-10-17 2010-04-27 삼성전자주식회사 포토 마스크의 헤이즈 모니터링 시스템 및 모니터링 방법
CN101738400B (zh) * 2008-11-14 2011-12-07 中芯国际集成电路制造(上海)有限公司 判断晶圆表面重复缺陷的方法及装置
CN102519968A (zh) * 2011-11-28 2012-06-27 上海华力微电子有限公司 掩膜板缺陷检测装置
CN102495070A (zh) * 2011-12-09 2012-06-13 北京凌云光视数字图像技术有限公司 大幅宽不干胶标签表面三维缺陷检测系统
JP2014035326A (ja) 2012-08-10 2014-02-24 Toshiba Corp 欠陥検査装置
WO2015167492A1 (en) * 2014-04-30 2015-11-05 Hewlett-Packard Development Company, L.P. Imaging appratus and methods using diffraction-based illumination
JP2016070730A (ja) * 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 画像取得装置および画像取得方法
CN106783648B (zh) * 2016-12-28 2019-01-25 歌尔股份有限公司 一种led显示屏的制备方法
KR102112053B1 (ko) * 2018-08-01 2020-05-18 주식회사 뷰온 이미지 센서를 이용한 표면결함 검사장치 및 검사방법
CN112557400B (zh) * 2020-11-30 2021-10-22 电子科技大学 一种卫星望远镜镜片表面疵病轮廓检测系统及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08226901A (ja) * 1995-02-21 1996-09-03 Dainippon Printing Co Ltd ビューファインダー用カラーフイルターの検査装置
KR20010101550A (ko) * 1999-11-25 2001-11-14 기시모토 마사도시 결함검사데이터처리시스템
AU4277501A (en) * 2000-03-24 2001-10-03 Olympus Optical Co., Ltd. Apparatus for detecting defect
CN100370243C (zh) * 2001-09-21 2008-02-20 奥林巴斯株式会社 缺陷检查装置
JP2004117059A (ja) * 2002-09-24 2004-04-15 Sony Corp 透明体の検査方法及び検査装置
JP4474904B2 (ja) * 2003-11-18 2010-06-09 凸版印刷株式会社 周期性パターンムラ検査装置
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP2007170827A (ja) * 2005-12-19 2007-07-05 Toppan Printing Co Ltd 周期性パターンの欠陥検査装置

Also Published As

Publication number Publication date
KR20070098695A (ko) 2007-10-05
JP2007271425A (ja) 2007-10-18
TW200736601A (en) 2007-10-01
CN101046624A (zh) 2007-10-03
CN101046624B (zh) 2011-11-02

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