JP4828710B2 - Chip resistor and manufacturing method thereof - Google Patents

Chip resistor and manufacturing method thereof Download PDF

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Publication number
JP4828710B2
JP4828710B2 JP2001080344A JP2001080344A JP4828710B2 JP 4828710 B2 JP4828710 B2 JP 4828710B2 JP 2001080344 A JP2001080344 A JP 2001080344A JP 2001080344 A JP2001080344 A JP 2001080344A JP 4828710 B2 JP4828710 B2 JP 4828710B2
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Prior art keywords
film
glass
electrode film
chip resistor
undercoat
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JP2002280205A (en
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立樹 平野
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Kamaya Electric Co Ltd
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Kamaya Electric Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、抵抗体膜を配置した絶縁基板を分割して形成されるチップ形抵抗器およびそのチップ形抵抗器の製造方法に関するものである。
【0002】
【従来の技術】
従来、この種のチップ形抵抗器は、下記の手順にて形成される。
最初に、例えば、アルミナ96%以上含有の磁器からなる絶縁基板の裏面と表面に、ガラスフリットと導電材料を含む材料ペーストをスクリーン印刷し、これを例えば約850℃で焼成し、膜厚が8〜12μm程度の裏電極膜と表電極膜とを形成する。次に、一対の表電極膜間に、ガラスフリットと導電材料を含む材料ペーストをスクリーン印刷した後、これを850℃で焼成し、抵抗膜を形成する。
【0003】
そして、抵抗膜の上にアンダーコート膜を形成する。このアンダーコート膜は硼珪酸鉛ガラスなど含む材料ペーストでスクリーン印刷をし、約600℃で焼成して、膜厚が8〜12μmの膜としたものである。このアンダーコート膜上から抵抗膜にレーザを照射して、抵抗値調整のためのトリミング溝の刻設を行ない、さらに材料ペーストのスクリーン印刷工程と約600℃の焼成工程とを行なって保護コート膜を形成し、絶縁基板の一次方向の分割溝に沿って短冊状に一次ブレークをする。
この後、ガラスフリットと導電材料を含む材料ペーストで端面にスクリーン印刷をし、約600℃で焼成して膜厚が10〜12μmの端面電極膜を形成し、二次ブレークにより個々のチップに分割すると、チップ形抵抗器は完成する。
【0004】
【発明が解決しようとする課題】
前記従来のチップ形抵抗器にあっては、表電極膜を形成した後に、抵抗膜、アンダーコート膜及び保護コート膜の各形成工程が行なわれ、600℃、850℃といった高い焼成温度に何度も曝されるため、表電極膜に含まれる銀や鉛などの導電材料が抵抗膜内に拡散し、これにより、抵抗値などの電気的な特性が変化するという問題があった。
【0005】
本発明は前記のような問題を解決するものであり、その課題は、製品における抵抗値のばらつきが小さくて精度が高く、トリミング調整したのちの保護コート膜や側面電極の焼成工程によっても、抵抗値が所定範囲から外れることを防ぎ、不良品の発生率を低くすることができるチップ形抵抗器及びその製造方法を提供することにある。
【0006】
【課題を解決するための手段】
本発明では、前記課題を解決するために、絶縁基板の上面の両端に表電極膜を形成し、その両端の表電極を接続して抵抗膜を形成したチップ形抵抗器において、前記表電極膜が、それが結晶化した後に軟化温度が後記する抵抗膜の焼成温度より高くなるガラスフリットを含む結晶化ガラスで形成し、前記抵抗膜を、前記表電極膜の結晶ガラスよりも低い温度で軟化するガラスフリットを含む非晶質ガラスで形成したものである、ことを特徴とするチップ形抵抗器が提供される。
このように表電極膜と抵抗膜との材料として、結晶化ガラスと非晶質ガラスとを組み合わせたチップ形抵抗器は新規であり、この結晶化ガラスと非晶質ガラスの組み合わせにより、抵抗膜を形成するときの焼成に際し、表電極膜や抵抗膜に含まれる導電材料が他方の膜内へ拡散することを抑制できる。ところで、結晶化ガラスとは、ガラスのなかに意図的に結晶を析出させたガラスであって、例えば、非晶質のものより耐熱度が増加したり、機械的強度も高められたものであり、従来から、ガラス食器やガラス鍋の材料として使用されている。
【0007】
また本発明では、絶縁基板の上面に表電極膜と抵抗膜とアンダーコート膜、及び保護コート膜とを備えたチップ形抵抗器の製造方法において、前記絶縁基板の表面にそれが結晶化した後に軟化温度が後記する抵抗膜の焼成温度より高くなるガラスフリットのペースト材料を塗着し結晶化ガラスに焼成する表電極膜形成工程と、前記表電極膜の上から接続する配置に前記表面電極膜の結晶ガラスよりも低い温度で軟化するガラスフリットのペースト材料を塗着し非晶質ガラスに焼成する抵抗膜形成工程と、を含むことを特徴とするチップ形抵抗器の製造方法が提供される。
【0008】
【発明の実施の形態】
本発明のチップ形抵抗器において、表電極膜に含まれる結晶化ガラスの結晶化率は75〜95%程度にすることが好ましい。
【0009】
本発明のチップ形抵抗器では、前記抵抗膜を覆うようにガラスにより形成したアンダーコート膜と、前記表電極膜の一部と前記抵抗膜及び前記アンダーコート膜の全体とを覆うようにガラスにより形成した保護コート膜及び側面電極を含むように構成しても良い。
【0010】
前記アンダーコート膜、保護コート膜及び側面電極膜におけるガラスは、結晶化ガラスまたは非晶質ガラスのいずれであっても良いが、より好適には、非晶質ガラスとする。一回焼成し膜が形成されても、そのガラス膜は約600℃で軟化点を有するという理由から、ガラス膜形成後の加熱によるアンダーコート、保護コート間の相互拡散が生じ、保護コートの信頼性が向上し、さらに側面電極と基板との密着力が向上するといった効果が得られる。
【0011】
本発明の製造方法において、前記表電極膜の焼成温度や焼成時間などの条件は、結晶化ガラスが形成されるように、その組成に応じて適宜選択することができる。
また本発明の製造方法において前記アンダーコート膜と前記保護コート膜とを形成するときの焼成温度は、その組成に応じて適宜選択されるものであるが、前記抵抗膜におけるガラスフリットの軟化点よりも低い温度とすることが好ましい。これにより、抵抗膜におけるガラスは、アンダーコート膜、保護コート膜及び側面電極膜を形成する際の焼成時にも軟化しないから、この抵抗膜に含まれる導電材料のアンダーコート膜や表電極膜への拡散を抑制することが可能になる。
【0012】
また本発明の製造方法において、抵抗膜、アンダーコート膜、保護コート膜及び側面電極膜を形成するときの焼成温度を、前記表電極膜における結晶化ガラスの軟化点よりも低い温度とすることが好ましい。これにより、表電極膜における結晶化ガラスは、抵抗膜、アンダーコート膜、保護コート膜及び側面電極膜を形成する際の焼成時にも軟化しないから、この表電極膜に含まれる導電材料のアンダーコート膜や抵抗膜への拡散抑制効果がより一層強められる。
【0013】
【実施例】
以下、図を参照して本発明の実施の一形態を詳細に説明する。
図3は本発明のチップ形抵抗器10の断面図である。
図3において、チップ形抵抗器10は、アルミナ96%以上含有の磁器からなる絶縁基板11と、この絶縁基板11の表面両端に形成された結晶化ガラスを含む表電極膜12,13と、この表電極膜12,13どうしを接続してこれらの一部を覆うように形成された非晶質ガラスを含む抵抗膜14と、抵抗膜を覆うように非晶質ガラスにより形成したアンダーコート膜15と、表電極膜12,13の一部、アンダーコート膜15及び抵抗膜14を覆うように非晶質ガラスにより形成した保護コート膜17と、絶縁基板11の端面に形成された側面電極18,19と、絶縁基板11の裏面両端に形成された裏電極膜20,21とを備え、抵抗膜14にはアンダーコート膜15と伴に刻まれたトリミング溝16が設けられている。
【0014】
次に、図1及び図2を参照してチップ形抵抗器10の製造方法を説明する。
図1は絶縁基板11上に表電極膜12,13が設けられた一つのチップの斜視図であり、図2(a)〜(e)は製造過程における一つのチップの平面図である。最初に、96%以上のアルミナを含有し、表裏面に一次方向および二次方向の分割溝が刻まれた絶縁基板を用意し、これの裏面に、導電材料とガラスフリットと含んだペースト材料でスクリーン印刷を行い、約850℃で焼成して裏面電極を形成する。
【0015】
次に、図1及び図2(a)に示したように、絶縁基板の表面に、例えば、軟化温度が570℃程度かつ結晶化温度が850℃程度のVO-CuO-PbO-SiO-MnOなどのガラスフリットと、結晶化を促進させるTiO2、ZrO2等の促進剤(ガラスフリットに対して重量比で5〜15%)と、Ag-Pdなどの導電材料とを含むペースト材料でスクリーン印刷を行い、約850℃で焼成してガラス材料が結晶化するように温度を制御しながら冷却し、これにより表面両端に表電極膜12,13を形成する。
ここで、表電極膜12,13におけるガラスフリットは、表電極膜12,13を焼成する際の温度とほぼ同じか、あるいはこの焼成温度よりも低い温度にて結晶化する材料を使用する。また、ガラスフリットは、一旦、結晶化した後には軟化温度が抵抗膜14の焼成温度よりも高くなるガラス材料を使用することが好ましい。
【0016】
次に、図2(b)に示したように、一対の表電極膜12,13どうしを接続してこれらの一部を覆うように、例えば、軟化温度が650℃程度のSiO−PbO−B23などのガラスフリットと、RuO2−Pb2 RuO2などの導電材料とを含むペースト材料でスクリーン印刷を行い、約850℃で焼成してガラス材料が非晶質になるように温度を制御しながら冷却し、これにより膜厚5〜15μm程度の抵抗膜14を形成する。ここで、抵抗膜14は、表電極膜12,13における結晶化ガラスの軟化温度よりも低い温度で焼成することが好ましい。また抵抗膜14に用いるガラスフリットは、表電極膜12,13における結晶化ガラスよりも低い温度で軟化するガラス材料を使用する。
【0017】
さらに、図2(c)に示したように、抵抗膜14の上に、軟化温度が560℃程度のSiO-PbO-B23などのガラスをスクリーン印刷して、これを約600℃で焼成してガラス材料が非晶質になるように冷却することにより、膜厚5〜15μm程度のアンダーコート膜15を形成する。このアンダーコート膜15の焼成温度とガラスの軟化温度は、抵抗膜14におけるガラスの軟化温度よりも低いことが好ましい。
【0018】
続いて、このアンダーコート膜15上からレーザを照射して抵抗値調整のためのトリミングを行ってトリミング溝16を形成し、その上に保護コート膜17を形成する。この保護コート膜17は、図示はしないが、ミドルコート膜とオーバーコート膜とで構成することが可能である。この場合、ミドルコート膜は、軟化温度が560℃程度のSiO-PbO-B23などのガラスをスクリーン印刷し、これを約600℃で焼成してガラス材料が非晶質になるように冷却して形成し、一方、保護コート膜は、軟化温度が550℃程度のSiO-PbO-B23-Al23などのガラスをスクリーン印刷し、これを約600℃で焼成してガラス材料が非晶質になるように冷却して形成する。
【0019】
このような保護コート膜の形成後は、絶縁基板の一次方向の分割溝に沿って短冊状にブレークして、絶縁基板の端面を覆うように、かつ表電極膜および裏電極膜の一部に重なるように側面電極18を形成し、絶縁基板を二次方向の分割スリッドでブレークして、個々のチップ状に分割し、電極めっき膜22,23を形成すればチップ形抵抗器10が得られる。
【0020】
【発明の効果】
本発明では、表電極膜におけるガラスを結晶化ガラスにする一方で、この表電極膜上に一部が重なる抵抗膜のガラスを非晶質ガラスにしたので、抵抗膜を形成するときの焼成に際して、表電極膜や抵抗膜に含まれる導電材料が他方の膜内へ拡散することを抑制できる。したがって、表電極膜と抵抗膜のガラスを非晶質ガラスから構成する従来品に比べて、抵抗値などの電気的な特性が安定し、製品における抵抗値のばらつきも小さくなって精度が高まり、トリミング調整したのちの保護コート膜や側面電極の焼成工程によっても、抵抗値が所定範囲から外れることを防ぎ、不良品の発生率を低くすることができる。
【図面の簡単な説明】
【図1】本発明の絶縁基板上に表電極膜が設けられた一つのチップの斜視図である。
【図2】(a)〜(e)は製造過程における一つのチップの平面図である。
【図3】本発明におけるチップ形抵抗器の縦断面図である。
【符号の説明】
10 チップ形抵抗器
11 絶縁基板
12,13 表電極膜
14 抵抗体膜
15 アンダーコート膜
16 トリミング溝
17 オーバーコート膜
18,19 端面電極膜
20,21 裏電極膜
22,23 電極めっき膜
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a chip resistor formed by dividing an insulating substrate on which a resistor film is arranged, and a method for manufacturing the chip resistor.
[0002]
[Prior art]
Conventionally, this type of chip resistor is formed by the following procedure.
First, for example, a material paste containing glass frit and a conductive material is screen-printed on the back and front surfaces of an insulating substrate made of porcelain containing 96% alumina or more, and this is fired at, for example, about 850 ° C. A back electrode film and a surface electrode film of about -12 μm are formed. Next, a material paste containing glass frit and a conductive material is screen-printed between the pair of surface electrode films, and then fired at 850 ° C. to form a resistance film.
[0003]
Then, an undercoat film is formed on the resistance film. This undercoat film is formed by screen printing with a material paste containing lead borosilicate glass or the like and baked at about 600 ° C. to form a film having a thickness of 8 to 12 μm. A laser is applied to the resistance film from above the undercoat film to form a trimming groove for adjusting the resistance value, and further, a screen printing process of material paste and a baking process at about 600 ° C. And a primary break is formed in a strip shape along the dividing groove in the primary direction of the insulating substrate.
After this, screen printing is performed on the end face with a material paste containing glass frit and a conductive material, baking is performed at about 600 ° C. to form an end face electrode film having a thickness of 10 to 12 μm, and divided into individual chips by secondary breaks. This completes the chip resistor.
[0004]
[Problems to be solved by the invention]
In the conventional chip resistor, after the surface electrode film is formed, each step of forming a resistance film, an undercoat film and a protective coat film is performed, and the process is repeated several times at a high firing temperature such as 600 ° C. and 850 ° C. As a result, the conductive material such as silver or lead contained in the surface electrode film diffuses into the resistance film, thereby changing the electrical characteristics such as the resistance value.
[0005]
The present invention solves the problems as described above, and the problem is that the resistance value variation in the product is small and high in accuracy, and the resistance can be reduced even by the baking process of the protective coat film and the side electrode after trimming adjustment. An object of the present invention is to provide a chip resistor capable of preventing the value from deviating from a predetermined range and reducing the occurrence rate of defective products, and a manufacturing method thereof.
[0006]
[Means for Solving the Problems]
In the present invention, in order to solve the above-described problem, a chip-type resistor in which a surface electrode film is formed on both ends of the upper surface of an insulating substrate and the surface electrodes on both ends are connected to form a resistance film. but it is formed in the crystallization glass comprising becomes higher glass frit than the firing temperature of the resistive film softening temperature below after crystallization, the resistive film at a temperature lower than the crystal glass of table electrode film is obtained by forming an amorphous glass containing glass frit softens, chip resistors are provided, characterized in that.
Thus, as a material for the surface electrode film and the resistance film, a chip-type resistor combining crystallized glass and amorphous glass is novel. In the firing when forming, the conductive material contained in the surface electrode film or the resistance film can be prevented from diffusing into the other film. By the way, crystallized glass is glass in which crystals are intentionally deposited in glass, for example, having a higher heat resistance or higher mechanical strength than amorphous ones. Traditionally, it has been used as a material for glass tableware and glass pans.
[0007]
Further, in the present invention, in a method of manufacturing a chip resistor having a surface electrode film, a resistance film, an undercoat film, and a protective coat film on the upper surface of the insulating substrate, after it is crystallized on the surface of the insulating substrate. a front electrode film forming step of firing the crystallized glass becomes higher Garasufuri' bets paste material than the firing temperature of the resistive film softening temperature described later with Nurigi, the surface electrodes disposed to be connected from the top of the table electrode film provide manufacturing method of the chip resistor which comprises a resistive film forming step of firing the amorphous glass by Nurigi paste material Garasufuri' you want to soften at a temperature lower than the crystalline glass layer, the Is done.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
In the chip resistor of the present invention, the crystallization rate of the crystallized glass contained in the surface electrode film is preferably about 75 to 95%.
[0009]
In the chip resistor of the present invention, the undercoat film formed of glass so as to cover the resistance film, and the glass so as to cover a part of the surface electrode film and the entire resistance film and the undercoat film. You may comprise so that the formed protective coating film and side electrode may be included.
[0010]
The glass in the undercoat film, the protective coat film, and the side electrode film may be either crystallized glass or amorphous glass, but more preferably amorphous glass. Even if a film is formed by firing once, the glass film has a softening point at about 600 ° C., and therefore, after the glass film is formed, mutual diffusion occurs between the undercoat and the protective coat due to heating. The effect of improving the adhesiveness and further improving the adhesion between the side electrode and the substrate can be obtained.
[0011]
In the production method of the present invention, conditions such as the firing temperature and firing time of the surface electrode film can be appropriately selected according to the composition so that crystallized glass is formed.
Further, in the production method of the present invention, the firing temperature when forming the undercoat film and the protective coat film is appropriately selected according to the composition, but from the softening point of the glass frit in the resistance film. It is preferable that the temperature be lower. As a result, the glass in the resistance film does not soften even during firing when forming the undercoat film, the protective coat film, and the side electrode film, so that the conductive material contained in the resistance film is applied to the undercoat film and the surface electrode film. It becomes possible to suppress diffusion.
[0012]
In the production method of the present invention, the firing temperature when forming the resistance film, the undercoat film, the protective coat film, and the side electrode film may be lower than the softening point of the crystallized glass in the surface electrode film. preferable. As a result, the crystallized glass in the surface electrode film does not soften during firing when forming the resistance film, the undercoat film, the protective coat film, and the side electrode film, so the undercoat of the conductive material contained in the surface electrode film The effect of suppressing diffusion into the film and the resistance film is further enhanced.
[0013]
【Example】
Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 3 is a cross-sectional view of the chip resistor 10 of the present invention.
In FIG. 3, a chip resistor 10 includes an insulating substrate 11 made of porcelain containing 96% alumina or more, surface electrode films 12 and 13 containing crystallized glass formed on both ends of the surface of the insulating substrate 11, A resistance film 14 including amorphous glass formed to connect the surface electrode films 12 and 13 to cover a part of them, and an undercoat film 15 formed of amorphous glass so as to cover the resistance film. A protective coating film 17 formed of amorphous glass so as to cover a part of the surface electrode films 12 and 13, the undercoat film 15 and the resistance film 14, and side electrodes 18 formed on the end face of the insulating substrate 11 19 and back electrode films 20 and 21 formed on both ends of the back surface of the insulating substrate 11, and the resistance film 14 is provided with a trimming groove 16 which is engraved with the undercoat film 15.
[0014]
Next, a manufacturing method of the chip resistor 10 will be described with reference to FIGS.
FIG. 1 is a perspective view of one chip in which surface electrode films 12 and 13 are provided on an insulating substrate 11, and FIGS. 2A to 2E are plan views of one chip in a manufacturing process. First, an insulating substrate containing 96% or more of alumina and having front and back side grooves engraved in the primary direction and the secondary direction is prepared, and the back side thereof is made of a paste material containing a conductive material and glass frit. Screen printing is performed and baking is performed at about 850 ° C. to form a back electrode.
[0015]
Next, as shown in FIG. 1 and FIG. 2A, on the surface of the insulating substrate, for example, VO—CuO—PbO—SiO—MnO having a softening temperature of about 570 ° C. and a crystallization temperature of about 850 ° C. and glass frit, TiO 2, ZrO 2 or the like of the accelerating agent for accelerating crystallization with (5-15% by weight relative to the glass frit), a screen printed with a paste material containing a conductive material such as Ag-Pd And is cooled while controlling the temperature so that the glass material is crystallized by baking at about 850 ° C., thereby forming the surface electrode films 12 and 13 on both ends of the surface.
Here, the glass frit in the surface electrode films 12 and 13 is made of a material that is crystallized at a temperature substantially equal to or lower than the temperature at which the surface electrode films 12 and 13 are fired. The glass frit is preferably made of a glass material whose softening temperature is higher than the firing temperature of the resistance film 14 after crystallization.
[0016]
Next, as shown in FIG. 2B , for example, SiO—PbO—B having a softening temperature of about 650 ° C. is connected so as to cover a part of the pair of surface electrode films 12 and 13. Screen printing is performed with a paste material containing a glass frit such as 2 O 3 and a conductive material such as RuO 2 —Pb 2 or RuO 2, and the temperature is set so that the glass material becomes amorphous by baking at about 850 ° C. As a result, the resistance film 14 having a film thickness of about 5 to 15 μm is formed. Here, the resistance film 14 is preferably fired at a temperature lower than the softening temperature of the crystallized glass in the surface electrode films 12 and 13. The glass frit used for the resistance film 14 is made of a glass material that softens at a lower temperature than the crystallized glass in the surface electrode films 12 and 13.
[0017]
Further, as shown in FIG. 2 (c), a glass such as SiO—PbO—B 2 O 3 having a softening temperature of about 560 ° C. is screen-printed on the resistance film 14, and this is performed at about 600 ° C. By baking and cooling so that the glass material becomes amorphous, the undercoat film 15 having a film thickness of about 5 to 15 μm is formed. The firing temperature of the undercoat film 15 and the glass softening temperature are preferably lower than the glass softening temperature of the resistance film 14.
[0018]
Subsequently, the undercoat film 15 is irradiated with a laser to perform trimming for adjusting the resistance value to form a trimming groove 16, and a protective coat film 17 is formed thereon. Although not shown, the protective coat film 17 can be composed of a middle coat film and an overcoat film. In this case, the middle coat film is formed by screen-printing glass such as SiO—PbO—B 2 O 3 having a softening temperature of about 560 ° C., and firing it at about 600 ° C. so that the glass material becomes amorphous. On the other hand, the protective coating film is formed by screen-printing glass such as SiO—PbO—B 2 O 3 —Al 2 O 3 having a softening temperature of about 550 ° C., and firing it at about 600 ° C. It is formed by cooling so that the glass material becomes amorphous.
[0019]
After the formation of such a protective coating film, it breaks into strips along the primary dividing grooves in the insulating substrate so as to cover the end surface of the insulating substrate and on part of the front electrode film and the back electrode film. The chip-type resistor 10 is obtained by forming the side electrodes 18 so as to overlap, breaking the insulating substrate with a dividing slit in the secondary direction, dividing it into individual chips, and forming the electrode plating films 22 and 23. .
[0020]
【The invention's effect】
In the present invention, since the glass in the surface electrode film is crystallized glass, the glass of the resistance film partially overlapping on the surface electrode film is amorphous glass. The conductive material contained in the surface electrode film or the resistance film can be prevented from diffusing into the other film. Therefore, compared with the conventional product in which the glass of the surface electrode film and the resistance film is made of amorphous glass, the electrical characteristics such as the resistance value are stabilized, the variation in resistance value in the product is reduced, and the accuracy is increased. The firing process of the protective coating film and side electrode after trimming adjustment can also prevent the resistance value from deviating from the predetermined range and reduce the incidence of defective products.
[Brief description of the drawings]
FIG. 1 is a perspective view of one chip in which a surface electrode film is provided on an insulating substrate of the present invention.
FIGS. 2A to 2E are plan views of one chip in a manufacturing process.
FIG. 3 is a longitudinal sectional view of a chip resistor according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Chip type resistor 11 Insulating substrate 12, 13 Surface electrode film 14 Resistor film 15 Undercoat film 16 Trimming groove 17 Overcoat film 18, 19 End electrode film 20, 21 Back electrode film 22, 23 Electrode plating film

Claims (6)

絶縁基板の上面の両端に表電極膜を形成し、その両端の表電極を接続して抵抗膜を形成したチップ形抵抗器において、
前記表電極膜が、それが結晶化した後に軟化温度が後記する抵抗膜の焼成温度より高くなるガラスフリットを含む結晶化ガラスで形成し、
前記抵抗膜を、前記表電極膜の結晶ガラスよりも低い温度で軟化するガラスフリットを含む非晶質ガラスで形成したものである、
ことを特徴とするチップ形抵抗器。
In a chip resistor in which a surface electrode film is formed on both ends of the upper surface of the insulating substrate, and a resistance film is formed by connecting the surface electrodes on both ends,
Table electrode film, it is formed in the crystallization glass comprising becomes higher glass frit than the firing temperature of the resistive film softening temperature below after crystallization,
The resistive film is obtained by forming an amorphous glass containing a glass frit which softens at a temperature lower than the crystal glass of Table electrode film,
A chip-type resistor characterized by that.
前記結晶化ガラスのガラスフリットがVO−CuO−PbO−SiO−MnOを含み、前記非晶質ガラスのガラスフリットがSiO−PbO−B2O3を含むものである請求項1に記載のチップ形抵抗器。Includes a glass frit VO-CuO-PbO-SiO- MnO of the crystallized glass, Chip resistor according to claim 1 glass frit of the amorphous glass is intended to include SiO-PbO-B 2 O 3 . 前記抵抗膜を覆うようにガラスにより形成したアンダーコート膜と、前記表電極膜の一部と前記抵抗膜及び前記アンダーコート膜の全体とを覆うようにガラスにより形成した保護コート膜とを含むことを特徴とする請求項1又は2に記載のチップ形抵抗器。  An undercoat film formed of glass so as to cover the resistive film; and a protective coat film formed of glass so as to cover a part of the surface electrode film and the entire resistive film and the undercoat film. The chip-type resistor according to claim 1 or 2. 絶縁基板の上面に表電極膜と抵抗膜とアンダーコート膜、及び保護コート膜とを備えたチップ形抵抗器の製造方法において、
前記絶縁基板の表面にそれが結晶化した後に軟化温度が後記する抵抗膜の焼成温度より高くなるガラスフリットのペースト材料を塗着し結晶化ガラスに焼成する表電極膜形成工程と、
前記表電極膜の上から接続する配置に前記表面電極膜の結晶ガラスよりも低い温度で軟化するガラスフリットのペースト材料を塗着し非晶質ガラスに焼成する抵抗膜形成工程と、
を含むことを特徴とするチップ形抵抗器の製造方法。
In the method of manufacturing a chip resistor comprising a surface electrode film, a resistance film, an undercoat film, and a protective coat film on the upper surface of the insulating substrate,
A front electrode film forming step of the it to the surface of the insulating substrate is fired Nurigi to crystallized glass becomes higher Garasufuri' bets paste material than the firing temperature of the resistive film softening temperature below after crystallization,
A resistive film forming step of calcining the amorphous glass by Nurigi the Garasufuri' bets paste material which softens at a temperature lower than the crystal glass of the surface electrode film arranged to be connected from the top of the table electrode film,
A method for manufacturing a chip resistor, comprising:
前記電極膜形成工程で使用したガラスフリットのペースト材料に、導電材料と結晶化促進剤とを含むものとし、前記抵抗膜形成工程で使用したガラスフリットのペースト材料が導電材料を含むものとした請求項4に記載のチップ形抵抗器の製造方法。The glass frit paste material used in the electrode film formation step includes a conductive material and a crystallization accelerator, and the glass frit paste material used in the resistance film formation step includes a conductive material. 5. A method for producing a chip resistor according to 4. 前記アンダーコート膜を形成する工程と前記保護コート膜を形成する工程とにおける焼成温度を、前記抵抗膜におけるガラスフリットの軟化点よりも低い温度とすることを特徴とする請求項4又は5に記載のチップ形抵抗器の製造方法。Wherein the baking temperature in the step of forming step and the protective coating layer for forming the undercoat layer, to claim 4 or 5, characterized in that a temperature lower than the softening point of the glass frit in the resistive film Of manufacturing a chip resistor.
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