JP4817379B2 - 原料供給装置 - Google Patents
原料供給装置 Download PDFInfo
- Publication number
- JP4817379B2 JP4817379B2 JP2006268032A JP2006268032A JP4817379B2 JP 4817379 B2 JP4817379 B2 JP 4817379B2 JP 2006268032 A JP2006268032 A JP 2006268032A JP 2006268032 A JP2006268032 A JP 2006268032A JP 4817379 B2 JP4817379 B2 JP 4817379B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- rod
- bottom lid
- material supply
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002994 raw material Substances 0.000 title claims description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 103
- 239000013078 crystal Substances 0.000 claims description 38
- 230000003014 reinforcing effect Effects 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 32
- 239000000725 suspension Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 description 36
- 238000005452 bending Methods 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
5 底蓋
10 単結晶引き上げ装置
12 チャンバ
14 サブチャンバ
16 シード軸
20 石英坩堝
22 黒鉛坩堝
24 ヒータ
26 断熱材
28 回転軸
30 ホッパー
40 ゲート
46 ランプ材
48 原料融液
74 連結器
75 底蓋部材
76 石英ガラス棒
77 R加工部
80 連結部材
90 筒状部材
Claims (5)
- 単結晶育成用原料を供給する原料供給装置であって、
前記原料を保持する略円筒状の原料供給管と、
前記原料供給管の下方開口端に脱着可能に備えられ、円錐状の底蓋とこの円錐形状の頂部で結合される棒状部とからなる石英製の底蓋部材と、
前記底蓋部材を前記棒状部を用いて吊り下げるための吊り棒と、
前記吊り棒の下端部と前記棒状部の上端部とを連結する連結器と、を備え、
前記連結器は、前記底蓋が揺動可能となるように、前記吊り棒と前記棒状部とを連結し、
前記底蓋部材は、前記底蓋と前記棒状部との境界部の強度を補強する補強部を備えることを特徴とする原料供給装置。 - 前記補強部は、前記棒状部から前記頂部に向い断面積がしだいに大きくなり、側面視でR形状を呈することを特徴とする請求項1記載の原料供給装置。
- 前記補強部は、前記棒状部の外径よりも大きい外径の円柱形状であることを特徴とする請求項1記載の原料供給装置。
- 前記補強部は、円錐台形状であり、該円錐台形状の上面及び下面の直径が前記棒状部の外径よりも大きいことを特徴とする請求項1記載の原料供給装置。
- 前記補強部は、上面の直径が前記棒状部の外径と実質的に等しく、下面は上面より大きな直径を有する円錐台形状であることを特徴とする請求項1記載の原料供給装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006268032A JP4817379B2 (ja) | 2006-09-29 | 2006-09-29 | 原料供給装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006268032A JP4817379B2 (ja) | 2006-09-29 | 2006-09-29 | 原料供給装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008088001A JP2008088001A (ja) | 2008-04-17 |
JP4817379B2 true JP4817379B2 (ja) | 2011-11-16 |
Family
ID=39372527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006268032A Active JP4817379B2 (ja) | 2006-09-29 | 2006-09-29 | 原料供給装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4817379B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101472352B1 (ko) | 2013-06-11 | 2014-12-12 | 주식회사 엘지실트론 | 충전 장치 |
WO2016152057A1 (ja) * | 2015-03-25 | 2016-09-29 | 株式会社トクヤマ | 投入装置、塊状シリコン原料の供給方法、シリコン単結晶製造装置およびシリコン単結晶の製造方法 |
JP6471700B2 (ja) * | 2016-01-05 | 2019-02-20 | 株式会社Sumco | リチャージ装置を用いたシリコン原料の融解方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0688865B2 (ja) * | 1989-09-12 | 1994-11-09 | 信越半導体株式会社 | ドーピング装置 |
WO2002068732A1 (fr) * | 2001-02-28 | 2002-09-06 | Shin-Etsu Handotai Co., Ltd. | Tube de recharge pour matériau polycristallin solide, et procédé de production de monocristal au moyen de ce tube |
JP4354758B2 (ja) * | 2002-09-13 | 2009-10-28 | コバレントマテリアル株式会社 | 単結晶引上装置 |
JP4868430B2 (ja) * | 2003-02-12 | 2012-02-01 | Sumco Techxiv株式会社 | リチャージ装置、インゴット引上げ装置、及びインゴット製造方法 |
JP4345624B2 (ja) * | 2004-09-21 | 2009-10-14 | 株式会社Sumco | チョクラルスキー法による原料供給装置および原料供給方法 |
-
2006
- 2006-09-29 JP JP2006268032A patent/JP4817379B2/ja active Active
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Publication number | Publication date |
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JP2008088001A (ja) | 2008-04-17 |
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