JP4816815B2 - Polishing apparatus for polygonal columnar member and polishing method thereof - Google Patents

Polishing apparatus for polygonal columnar member and polishing method thereof Download PDF

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JP4816815B2
JP4816815B2 JP2010546168A JP2010546168A JP4816815B2 JP 4816815 B2 JP4816815 B2 JP 4816815B2 JP 2010546168 A JP2010546168 A JP 2010546168A JP 2010546168 A JP2010546168 A JP 2010546168A JP 4816815 B2 JP4816815 B2 JP 4816815B2
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polishing
workpiece
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polygonal columnar
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JPWO2011052267A1 (en
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幹敏 平賀
尚 松本
茂 棚橋
左一郎 羽鳥
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新東工業株式会社
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Description

本発明は、硬脆材料からなる多角柱形状の被研磨加工物の各平面(以下「平面部」という)と、該2平面が交わる陵角(以下「陵角部」という)の表層を研磨除去する研磨装置に関するものである。   The present invention polishes the surface layer (hereinafter referred to as “flat angle portion”) at which each plane (hereinafter referred to as “plane portion”) intersects each plane (hereinafter referred to as “plane portion”) of a polygonal column-shaped workpiece made of hard and brittle material. The present invention relates to a polishing apparatus to be removed.
本発明の研磨対象となる硬脆材料の多角柱状部材には、例えば、ワイヤソーによりスライス加工をしてシリコンウエハを得るための材料となる四角柱形状のシリコンブロックがあって、該シリコンブロックは、素材が単結晶、あるいは多結晶からなるシリコンインゴットをバンドソーもしくはワイヤソーにより切断して四角柱形状に形成されるものであるが、前記切断後の外形寸法に関する要求精度が高い場合はその表層面を研削処理する。   The polygonal columnar member of the hard and brittle material to be polished of the present invention has, for example, a quadrangular columnar silicon block that is a material for slicing with a wire saw to obtain a silicon wafer, and the silicon block is A silicon ingot made of a single crystal or polycrystal is cut into a quadrangular prism shape by cutting with a band saw or wire saw. If the required accuracy regarding the outer dimensions after cutting is high, the surface layer is ground. To process.
単結晶からなるシリコンブロックは、引き上げ法により製造されて円柱形状に成形されたシリコンインゴットの円柱表層部を柱軸方向にバンドソーもしくはワイヤソーを使用して互いにその面が略直角となるように切断除去して4平面部を形成するとともにその2平面部間に前記円柱表層部の一部を残して円弧面(R面)とした4陵角部を形成したのち、必要に応じて前記4平面部の平面研削あるいは前記4陵角部の円筒研削を実施する。   Silicon blocks made of single crystal are cut and removed from the cylindrical surface layer of a silicon ingot manufactured by the pulling method and formed into a cylindrical shape using a band saw or wire saw in the direction of the column axis so that the surfaces are substantially perpendicular to each other. The four plane portions are formed, and the four plane portions are formed as arcuate surfaces (R planes) by leaving a part of the cylindrical surface layer portion between the two plane portions. Surface grinding or cylindrical grinding of the four corners is performed.
また、多結晶からなるシリコンブロックは、溶融原料を成形型に流し込んで立方体形状に成形されたシリコンインゴットの6面の表層部をバンドソーもしくはワイヤソーにより切断除去した後、さらに四角柱形状に切断して4面から成る平面部を形成し該2平面が交わる4陵角部を微小面取り(C面)している。なお、前記切断面の外形寸法に関する要求精度が高い場合は前記と同様に研削処理する。   In addition, the polycrystalline silicon block is prepared by pouring the molten raw material into a mold and cutting and removing the six surface layers of the silicon ingot formed into a cubic shape with a band saw or wire saw, and further cutting into a quadrangular prism shape. A flat surface portion consisting of four surfaces is formed, and the four corner portions where the two flat surfaces intersect each other are chamfered (C surface). In addition, when the required precision regarding the external dimension of the said cut surface is high, it grinds similarly to the above.
前記のように切断成形された単結晶シリコンブロック、ならびに多結晶シリコンブロックは、次工程にてワイヤソーによりスライス加工されてシリコンウエハが製造されるものであるが、前者の単結晶シリコンブロックの4平面部、および円弧面(R面)を成した4陵角部の表層部にマイクロクラックや微小凹凸が存在するとスライス加工時に製造されたシリコンウエハの割れ・欠けが発生し易いために、研磨手段としてダイアモンド砥粒(#800)を混入させたナイロン樹脂ブラシを使用して表面から50〜100μm以上、200μm以下の表層部を研磨除去して、前記4平面部および4陵角部に存在する微小凹凸(およびマイクロクラック)を除去し、研磨前の表面粗さRy10〜20μmを3〜4μmに平坦化し、シリコンウエハの製品歩留まりの向上を図った研磨方法が特許文献1により開示されている。   The single crystal silicon block and the polycrystalline silicon block cut and formed as described above are sliced with a wire saw in the next process to produce a silicon wafer. As a polishing means, if there are micro cracks or micro unevenness in the surface layer part of the four corners that form a circular arc surface (R surface), the silicon wafer manufactured at the time of slicing is likely to be cracked or chipped. Using a nylon resin brush mixed with diamond abrasive grains (# 800), the surface layer part of 50-100 μm or more and 200 μm or less is polished and removed from the surface, so that the fine irregularities present in the four plane parts and the four corner parts (And microcracks) are removed, the surface roughness Ry of 10-20 μm before polishing is flattened to 3-4 μm, and a silicon wafer is manufactured. Polishing method with improved yield has been disclosed in Patent Document 1.
また、後者の陵角部が直角形状で微小C面取りを施した多結晶シリコンブロックにおいても同様であって、その表層部にマイクロクラックや微小凹凸が存在するとスライス加工して製造されたシリコンウエハの割れ・欠けが発生し易いために、研磨手段としてシリコンブロックの2平面部を上向きにするV字状の支持部に支持させ、移送されてきた前記シリコンブロックの2平面部を斜め上方から同時に研磨できるように粗研磨用と仕上げ研磨用の回転ブラシを設け、4平面部に存在する微小凹凸を研磨除去して平坦化し、シリコンウエハ製品の歩留まり向上を図った研磨方法が特許文献2により開示されている。   The same applies to the polycrystalline silicon block in which the latter corner portion has a right-angled shape and is subjected to minute C chamfering, and a silicon wafer manufactured by slicing processing when a microcrack or minute unevenness exists in the surface layer portion. Since cracking and chipping are likely to occur, it is supported by a V-shaped support portion with the two flat portions of the silicon block facing upward as polishing means, and the two flat portions of the transferred silicon block are simultaneously polished from obliquely above Patent Document 2 discloses a polishing method in which rotary brushes for rough polishing and finish polishing are provided so as to be able to polish and flatten by removing fine irregularities present on the four plane portions, thereby improving the yield of silicon wafer products. ing.
特許文献1: 特許第4133935号公報
特許文献2: 特許第3405411号公報
Patent Document 1: Japanese Patent No. 4133935 Patent Document 2: Japanese Patent No. 3405411
前記のように製造されたシリコンブロックは、その平面部と陵角部の表層部に表面粗さ:Ry10〜20μm(JISB0601:1994)の凹凸と、さらに表層面より深さが80〜100μmのマイクロクラックが製造工程中に発生して存在する場合がある。このような状態のシリコンブロックをワイヤソーでスライス加工すると、前記したように、割れ・欠けが生じた不良のシリコンウエハを製造することとなるから、スライス加工前に、研磨加工時間を短くして(1)前記シリコンブロックの表層部から100μm前後の深さを研磨除去してマイクロクラックが除去できる高研磨能力、と(2)表面粗さ:Ry10〜20μmを数μm以下にする微細研磨能力、を備えた製造コストが安価な研磨装置が要求されている。   The silicon block manufactured as described above has irregularities with surface roughness: Ry of 10 to 20 μm (JISB0601: 1994) on the surface layer portion of the flat portion and the corner portion, and a microscopic surface having a depth of 80 to 100 μm from the surface layer surface. Cracks may occur and exist during the manufacturing process. When the silicon block in such a state is sliced with a wire saw, as described above, a defective silicon wafer with cracks / chips is produced, so the polishing time is shortened before slicing ( 1) A high polishing ability capable of removing microcracks by polishing and removing a depth of about 100 μm from the surface layer portion of the silicon block, and (2) surface roughness: a fine polishing ability for reducing Ry10 to 20 μm to several μm or less. There is a demand for a polishing apparatus equipped with a low manufacturing cost.
本発明は、前記の要求事項を満足させるとともに被研磨加工物である多角柱状のシリコンブロック(硬脆材料)の平面部および陵角部の研磨加工を1台の装置で研磨を可能とした研磨装置とその研磨方法を提供することを目的とする。   The present invention is a polishing that satisfies the above requirements and enables polishing of a planar portion and a corner portion of a polygonal columnar silicon block (hard and brittle material) that is a workpiece to be polished with a single apparatus. An object is to provide an apparatus and a polishing method thereof.
前記、課題を解決するために成された本発明は、被研磨加工物(W)の形状が多角柱状の各平面部および各陵角部を研磨する研磨装置であって、該被研磨加工物(W)の各平面部のうち1平面部または各陵角部のうち1陵角部のいずれかを研磨する加工面(P)として水平上向きとなるように載置できるようにした基台(4)と、前記被研磨加工物(W)を研磨加工する時にその両端面を挟持し、研磨終了後に前記挟持状態を解除する把持部(6A)、(6B)を先端に取付けて前後動するようにしたクランプ軸(12A)、(12B)からなるクランプ手段(5)と、前記被研磨加工物(W)を研磨加工する時に、前記加工面(P)に研磨手段(2)の先端が接触回転しながら研磨加工する研磨手段(2)を移送する研磨ユニット(1)と、前記被研磨加工物(W)の加工面(P)の高さ位置を研磨加工前に検出し該高さ位置検出信号を制御手段(13)に記憶させる高さ位置検出手段(3)と、を備え、前記制御手段(13)が前記高さ位置検出信号により研磨手段(2)の先端の切込み量を演算処理して研磨加工を行うようにした多角柱状部材の研磨装置を第1の発明とする。なお、ここでいう「水平上向き」とは、加工面を基準面(下方向)としている。
The present invention, which has been made to solve the above-mentioned problems, is a polishing apparatus for polishing each plane part and each corner part of the workpiece to be polished (W), wherein the workpiece is polished. (W) A base that can be placed so as to be horizontally upward as a processing surface (P) for polishing either one flat surface portion of each flat surface portion or one of the long corner portions. 4) and gripping portions (6A) and (6B) for holding the both end surfaces of the workpiece (W) when polishing and releasing the clamping state after polishing is completed and moved back and forth. When the clamp means (5) composed of the clamp shafts (12A) and (12B) and the workpiece (W) to be polished are polished, the tip of the polishing means (2) is placed on the processing surface (P). A polishing unit (1) for transferring polishing means (2) for polishing while rotating in contact; Height position detection means (3) for detecting the height position of the processed surface (P) of the workpiece (W) before polishing and storing the height position detection signal in the control means (13); A polishing apparatus for a polygonal columnar member, wherein the control means (13) performs a polishing process by calculating a cutting amount at the tip of the polishing means (2) based on the height position detection signal. And Here, “horizontal upward” means that the processed surface is a reference surface (downward).
前記した「演算処理」とは、制御手段(13)に研磨開始前に作業者が入力する「研磨手段(2)の砥材の粒度」、「前工程における被研磨加工物(W)の切断条件」、「被研磨加工物(W)の研磨加工部位(平面部または陵角部)」の研磨加工条件と、前記高さ位置検出手段(3)の高さ位置検出信号による「被研磨加工物(W)の加工面(P)に対する研磨手段(2)の先端の切り込み量」が自動設定されることを云い、また、前記「被研磨加工物(W)の研磨加工部位(平面部または陵角部)」の入力により「研磨ユニット(1)の移送速度」が自動設定されることを云う。
The above-mentioned “arithmetic processing” means “the abrasive grain size of the polishing means (2)” input by the operator before starting polishing to the control means (13), “cutting the workpiece (W) to be polished in the previous step” "Conditions to be polished" based on the polishing conditions of the "conditions", "the polishing portion (planar portion or corner portion) of the workpiece (W)" and the height position detection signal of the height position detecting means (3) refers to the object cutting amount-edge polishing means (2) with respect to the processing plane (P) of (W) "is automatically set, also the" polishing part (flat portion of the polished workpiece (W) Or, “the transfer speed of the polishing unit (1)” is automatically set by inputting “
また、前記第1の発明に記載の把持部(6A)、(6B)に両端面が挟持された被研磨加工物(W)を前記クランプ軸(12A)、(12B)の軸心を中心に所定の回転角度が設定されて被研磨加工物(W)の加工面(P)が上向きとなるように回転するタクト回転、または回転速度が設定されて回転する連続回転のどちらかに選択して回転するようにした回転手段(14A)、(14B)と、前記基台(4)を昇降させる昇降手段と、を備え、研磨加工前に研磨加工する被研磨加工物(W)の多角柱形状の角数と、該被研磨加工物(W)の前記陵角部の研磨加工条件である前記回転手段(14A)、(14B)によるタクト回転、または連続回転のどちらかを選択して前記制御手段(13)に設定するようにした多角柱状部材の研磨装置を第2の発明とする。   Further, the workpiece (W) having both end surfaces sandwiched between the gripping portions (6A) and (6B) according to the first invention is centered on the axis of the clamp shafts (12A) and (12B). Select either tact rotation that rotates so that the processing surface (P) of the workpiece (W) is set upward with a predetermined rotation angle or continuous rotation that rotates with the rotation speed set Rotating means (14A) and (14B) adapted to rotate, and elevating means for raising and lowering the base (4), and a polygonal column shape of a workpiece (W) to be polished before polishing And the control by selecting either the tact rotation by the rotating means (14A) and (14B) or the continuous rotation which is the polishing processing condition of the corner portion of the workpiece (W). A polishing apparatus for a polygonal columnar member set in the means (13) And 2 of the invention.
前記したクランプ軸(12A)、(12B)の「タクト回転」とは、被研磨加工物(W)の各陵角部および各平面部の研磨を1加工面(P)毎に研磨する場合に選択設定する研磨形式であって、研磨加工開始前に回転手段(14A)、(14B)のクランプ軸(12A)、(12B)の研磨形式を「タクト回転」に選択設定し、被研磨加工物(W)の多角柱形状の「角数」を制御手段(13)に入力することにより前記回転手段(14A)、(14B)の回転角度が演算処理されて、1加工面(P)の研磨が終了する毎に被研磨加工物(W)の次の加工面(P)が上向きとなるように回転手段(14A)、(14B)のクランプ軸(12A)、(12B)が回転して停止する研磨形式であって、該被研磨加工物(W)の形状が多結晶からなるシリコンブロックのように多数の平面部と該2平面部が交わる陵角部の断面形状が角形の多角柱状部材を研磨加工する場合に設定されるものである。   The “tact rotation” of the clamp shafts (12A) and (12B) described above refers to the case where polishing of each corner portion and each plane portion of the workpiece (W) is performed for each processing surface (P). The polishing type to be selected and set, and the polishing type of the clamp shafts (12A) and (12B) of the rotating means (14A) and (14B) is selectively set to “tact rotation” before starting the polishing process, and the workpiece to be polished By inputting the “angle” of the polygonal column shape of (W) to the control means (13), the rotation angle of the rotation means (14A) and (14B) is calculated, and polishing of one processed surface (P) is performed. Rotating means (14A) and clamp shafts (12A) and (12B) of rotation means (14A) and (14B) rotate and stop so that the next processing surface (P) of the workpiece (W) is directed upward each time is finished. The polishing type is such that the shape of the workpiece (W) is polycrystalline. In which a number of the planar portion and a cross-sectional shape of the ridge corner of the second flat section intersect as silicon block is set when polished polygonal columnar member squareness.
また、前記したクランプ軸(12A)、(12B)の「連続回転」とは、被研磨加工物(W)の形状が単結晶からなるシリコンブロックのように多面からなる平面部と該2平面部が交わる陵角部の断面形状が円弧状であって該陵角部の研磨加工をする場合に選択設定する研磨形式であって、研磨加工開始前に回転手段(14A)、(14B)のクランプ軸(12A)、(12B)の回転形式を「連続回転」に選択設定しその「回転速度」を制御手段(13)に入力することにより、被研磨加工物(W)がクランプ軸(12A)、(12B)の軸心を中心にして連続回転して該各陵角部が同時に研磨加工されるものである。なお、当該被研磨加工物(W)の各平面部の研磨加工は、前記研磨形式の「タクト回転」により研磨加工される。   In addition, the “continuous rotation” of the clamp shafts (12A) and (12B) described above means that the polished workpiece (W) has a multi-plane flat portion such as a silicon block whose shape is a single crystal and the two flat portions. Is a polishing type that is selected and set when the cross-sectional shape of the corner portion where the crossing is arc-shaped and polishing the corner portion, and the clamps of the rotating means (14A) and (14B) before the polishing processing starts. By selecting and setting the rotation type of the shafts (12A) and (12B) to “continuous rotation” and inputting the “rotation speed” to the control means (13), the workpiece (W) is clamped by the clamp shaft (12A). , (12B) is continuously rotated around the axis, and the respective corner portions are polished simultaneously. In addition, the polishing of each planar portion of the workpiece (W) is polished by the “tact rotation” of the polishing type.
また、第1または第2の発明において、研磨手段(2)が、砥粒を含有した毛材であり、該毛材が該研磨手段の底部にリング状に複数本植設されている研磨ブラシであることを第3の発明とする。   Further, in the first or second invention, the polishing means (2) is a bristle material containing abrasive grains, and a plurality of the bristle material are planted in a ring shape at the bottom of the grinding means It is the third invention.
また、第1または第2の発明において、研磨手段(2)が、砥粒を含有した毛材を複数本束ねた研磨具(10)の基部が回転板に複数本植設されている研磨ブラシであることを第4の発明とする。   In the first or second invention, the polishing means (2) is a polishing brush in which a plurality of base portions of a polishing tool (10) in which a plurality of hair materials containing abrasive grains are bundled are implanted on a rotating plate. This is the fourth invention.
また、第1または第2の発明において、研磨手段(2)が、砥粒を含有し互いが絡み合った繊維状の弾性体が該研磨手段の底部に複数本植設されている研磨ブラシであることを第5の発明とする。   In the first or second invention, the polishing means (2) is a polishing brush in which a plurality of fibrous elastic bodies containing abrasive grains and entangled with each other are implanted at the bottom of the polishing means. This is the fifth invention.
また、第3乃至第5のいずれかの発明において、研磨手段(2)を複数台、それぞれの研磨手段(2)の下端が略水平、すなわち、加工面に対しそれぞれの研磨手段(2)の下端が略平行となるように連接したことを第6の発明とする。   In any of the third to fifth inventions, a plurality of polishing means (2) are provided, and the lower end of each polishing means (2) is substantially horizontal, that is, each polishing means (2) The sixth invention is such that the lower ends are connected so as to be substantially parallel.
また、第3乃至第5のいずれかの発明において、研磨手段(2)を、前記多角柱状部材の少なくとも2以上の異なる面に配置したことを第7の発明とする。   In any one of the third to fifth inventions, the seventh invention is that the polishing means (2) is disposed on at least two different surfaces of the polygonal columnar member.
また、第3乃至第5のいずれかの発明において、研磨手段(2)を前記多角柱状部材の少なくとも2以上の異なる面に、それぞれ複数台、それぞれの研磨手段(2)の下端が略水平、すなわち、加工面に対しそれぞれの研磨手段(2)の下端が略平行となるように配置したことを第8の発明とする。   In any one of the third to fifth inventions, a plurality of polishing means (2) may be provided on at least two different surfaces of the polygonal columnar member, and the lower ends of the polishing means (2) may be substantially horizontal. That is, the eighth invention is that the lower end of each polishing means (2) is arranged substantially parallel to the processed surface.
また、前記第6または第8の発明に記載の発明において、毛材に混合される砥粒の粒度がF180〜#2000(JIS R6001:1998)であって、その粒度が異なる研磨手段(2)を2種類以上選択し、該研磨手段(2)を、その粒度が「粗」から「細」の順に研磨加工するように連設した多角柱状部材の研磨装置を第9の発明とする。   Further, in the invention described in the sixth or eighth invention, the abrasive means (2) having a particle size of F180 to # 2000 (JIS R6001: 1998), and the particle size of which is mixed with the hair material is different. A ninth aspect of the present invention is a polishing apparatus for a polygonal columnar member in which two or more types are selected and the polishing means (2) is continuously processed so that the particle size thereof is polished in the order of “rough” to “fine”.
第6または第8の発明において、毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が略同一の研磨手段を選択し、該研磨手段を連接したことを第10の発明とする。   In the sixth or eighth aspect of the present invention, the abrasive grain mixed with the hair material is F180 to # 2000, and a polishing means having substantially the same grain size is selected, and the polishing means is connected to the tenth. It is set as invention of this.
また、前記第1乃至第10のいずれかの発明に記載の基台(4)に被研磨加工物(W)を載置する受け部材(7)に、前記被研磨加工物(W)のいずれか1陵角部を研磨するときに、該1陵角部を水平上向きに載置できるようにその下側となる平面部が接する切欠きV(8)と、該切欠きV(8)に、前記被研磨加工物(W)の各平面部のいずれか1平面部を研磨するときに、該1平面部を上向きに載置できるようにその下側となる陵角部が係止できる切欠きL(9)と、を形成した多角柱状部材の研磨装置を第11の発明とする。   In addition, any of the workpieces (W) is placed on the receiving member (7) for placing the workpiece (W) on the base (4) according to any one of the first to tenth inventions. When the 1 corner portion is polished, the notch V (8) which is in contact with the lower plane portion so that the 1 corner portion can be placed horizontally upward, and the notch V (8) A cut that can lock the lower corner portion so that one flat surface portion can be placed upward when polishing any one flat surface portion of the workpiece (W). A polishing apparatus for a polygonal columnar member formed with a notch L (9) is defined as an eleventh invention.
また、前記第1乃至第11のいずれかの発明に記載の多角柱状部材の研磨装置により、被加工物の表層より100μm以下に存在するマイクロクラックが除去され、かつ研磨加工面の表面粗さRy(JIS B0601:1994)が3μm以下とされた多角柱状部材を第12の発明とする。   Moreover, the polishing apparatus for a polygonal columnar member according to any one of the first to eleventh inventions removes microcracks present at 100 μm or less from the surface layer of the workpiece, and the surface roughness Ry of the polished surface. A polygonal columnar member having (JIS B0601: 1994) of 3 μm or less is defined as the twelfth invention.
また、第12の発明に記載の多角柱状部材はシリコンブロックまたはセラミックスであることを第13の発明とする。   A thirteenth invention is that the polygonal columnar member described in the twelfth invention is a silicon block or ceramics.
また、前記第1の発明に記載の多角柱状部材の研磨装置において、基台(4)に載置されている被研磨加工物(W)の複数ある加工面(P)のうち各加工面(P)の研磨が終了した時点で前記クランプ手段(5)のクランプ軸(12A)、(12B)が後退して把持部(6A)、(6B)の挟持状態が解除された前記被研磨加工物(W)の次の加工面(P)を水平上向きとなるように作業者が手動で反転したのち、前記クランプ手段(5)のクランプ軸(12A)、(12B)が前進して一方の把持部(6A)が被研磨加工物(W)の基準端面位置に到達して停止し他方のクランプ軸(12B)がさらに前進してその把持部(12B)が被研磨加工物(W)の他方の端面を押圧して挟持し前記に設定された次の加工面(P)を研磨加工するようにし、すべての加工面(P)を研磨加工する手順を、各陵角部の研磨を終了させた後に各平面部の研磨加工を行うようにした多角柱状部材の研磨方法を第14の発明とする。   Moreover, in the polishing apparatus for a polygonal columnar member according to the first invention, each processing surface (P) among a plurality of processing surfaces (P) of the workpiece (W) to be polished placed on the base (4) ( The workpiece to be polished in which the clamp shafts (12A) and (12B) of the clamp means (5) are retreated and the gripping portions (6A) and (6B) are released from being held when the polishing of P) is completed. After the operator manually inverts the next processed surface (P) of (W) so as to be horizontally upward, the clamp shafts (12A) and (12B) of the clamp means (5) are moved forward to hold one of them. The portion (6A) reaches the reference end face position of the workpiece (W) and stops, the other clamp shaft (12B) further advances, and the gripping portion (12B) becomes the other end of the workpiece (W). The end surface of the material is pressed and sandwiched, and the next processing surface (P) set as described above is polished. The fourteenth aspect of the present invention is a polishing method for a polygonal columnar member in which the polishing process for all the processed surfaces (P) is performed by polishing each flat surface portion after finishing the polishing of each corner portion. To do.
また、前記第2の発明に記載の多角柱状部材の研磨装置において、基台(4)に載置されている被研磨加工物(W)の両端面をクランプ手段(5)の把持部(6A)、(6B)により挟持した状態で前記基台(4)を下降させて被研磨加工物(W)より離間させておき、被研磨加工物(W)の各陵角部の研磨を、所定の回転角度が設定された前記回転手段(14A)、(14B)を回転させて1陵角部毎に研磨面(P)が上向きとなるように位置決めして研磨するようにしたタクト研磨、または回転速度が設定された前記回転手段(14A)、(14B)を連続回転させて各陵角部を同時に研磨するようにした連続研磨のどちらかの方法によりすべての陵角部の研磨加工を終了させたのち、所定の回転角度が設定された前記回転手段(14A)、(14B)を回転させて1平面部毎に研磨加工してすべての平面部の研磨加工を行うようにした多角柱状部材の研磨方法を第15の発明とする。   Further, in the polygonal columnar member polishing apparatus according to the second aspect of the present invention, both end surfaces of the workpiece (W) placed on the base (4) are clamped to the gripping portions (6A) of the clamping means (5). ) And (6B), the base (4) is lowered and separated from the workpiece (W) to polish each corner portion of the workpiece (W) in a predetermined manner. Tact polishing in which the rotation means (14A) and (14B) set at the rotation angle of the rotation is rotated so that the polishing surface (P) is positioned upward and polished every one corner portion, or Polishing of all the corners is completed by either of the continuous polishing methods in which the rotation means (14A) and (14B) having the rotation speed are continuously rotated to polish each corner at the same time. After the rotation, the rotation means (14A , And polished by the polishing method of the polygonal-shaped member to perform the polishing of all the flat portion aspect 15 per flat portion by rotating the (14B).
また、前記第6または第8の発明に記載の多角柱状部材の研磨装置において、毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が異なる研磨手段(2)を2種類以上選択し、該研磨手段(2)をその粒度が「粗」から「細」の順に研磨加工するように連設して研磨する多角柱状部材の研磨方法を第16の発明とする。   Further, in the polishing apparatus for a polygonal columnar member according to the sixth or eighth invention, the abrasive means (2) having a particle size of abrasive grains mixed with the hair material of F180 to # 2000 and having different particle sizes is provided. A sixteenth aspect of the invention is a polishing method for a polygonal columnar member in which two or more types are selected and the polishing means (2) is connected and polished so that the particle size is polished in the order of “rough” to “fine”.
また、前記第6または第8の発明に記載の多角柱状部材の研磨装置において、前記毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が略同一の研磨手段(2)を選択し、該研磨手段を連接して研磨する多角柱状部材の研磨方法を第17の発明とする。 Further, in the polishing apparatus for a polygonal columnar member according to the sixth or eighth invention, the abrasive grains mixed in the bristle material are F180 to # 2000, and the polishing means having substantially the same particle size ( According to a seventeenth aspect of the present invention, there is provided a polishing method for a polygonal columnar member that selects 2) and connects the polishing means to polish.
前記、第1の発明によれば、a)研磨開始前に「研磨加工完成品の標準片(マスターワーク)」を基台(4)上に載置して研磨手段2の先端の研磨加工を開始する高さ位置を設定したのち、b)前記基台(4)の研磨加工完成品の標準片を取り外し、被研磨加工物(W)をその加工面(P)が上向きとなるように載置し、
c)「研磨手段(2)の砥材の粒度」、「被研磨加工物(W)の前工程における切断条件」、「被研磨加工物(W)の研磨加工部位(平面部または陵角部)」の研磨加工条件を制御手段(13)に入力した後、研磨開始すれば、クランプ手段(5)の把持部(6A)、(6B)が被研磨加工物(W)の両端面を挟持して基台(4)上に固定し、例えば、被研磨加工物(W)の前工程における切断後の外形寸法に誤差が生じてバラツキがあった場合であっても、研磨手段(2)の先端の「被研磨加工物(W)の加工面(P)に対する切り込み量」が前記高さ位置検出手段(3)の高さ位置検出信号によって演算処理され研磨加工前に自動設定されて最良の研磨加工ができる。その研磨加工が終了したら、該被研磨加工物(W)の両端面を挟持している前記クランプ手段(5)の把持部(6A)、(6B)が自動解除されるから、基台(4)に載置されている被研磨加工物(W)を次の加工面(P)が上向きになるように作業者が手動により反転したのち、クランプ手段(5)の把持部(6A)、(6B)を作動させて被研磨加工物(W)の両端面を挟持固定して次の加工面(P)の研磨加工を行うことができる。
前記した一連の研磨工程における被研磨加工物(W)の加工面(P)の設定は、作業者の手動によるものであるが、研磨手段(2)の先端の被研磨加工物(W)への切込み量や、被研磨加工物(W)の加工面(P)に所定の回転速度で接触回転して研磨加工する作動は自動制御によるものであるから、最良の研磨加工ができ生産性の向上を図ることができる。
Wherein, according to the first aspect, a) polishing the polished before starting the "polishing finished standard piece (master work)" a base (4) is placed on-edge of the polishing means 2 B) After removing the standard piece of the finished polished product of the base (4), the workpiece (W) is so shaped that its processed surface (P) is facing upward. Placed,
c) “Grit size of abrasive material of polishing means (2)”, “Cutting condition in preceding process of workpiece (W) to be polished”, “Polished portion (planar portion or slope portion) of workpiece (W) to be polished ) ”Is input to the control means (13) and then the polishing is started, the gripping portions (6A) and (6B) of the clamping means (5) sandwich the both end faces of the workpiece (W). Even if there is a variation due to an error in the outer dimensions of the workpiece (W) after cutting in the previous step, the polishing means (2) is fixed on the base (4). is automatically set before the "depth of cut with respect to the processing plane (P) of the polished workpiece (W)" is the arithmetic processing by the height position detection signal of the height position detecting means (3) lapping of the previous end of the The best polishing process is possible. When the polishing process is completed, the gripping portions (6A) and (6B) of the clamping means (5) holding both end faces of the workpiece (W) are automatically released, so that the base (4 After the operator manually flips the workpiece (W) placed on the workpiece so that the next processing surface (P) faces upward, the gripping portion (6A) of the clamping means (5) ( 6B) is actuated to sandwich and fix both end faces of the workpiece (W), and the next processed surface (P) can be polished.
The processing surface (P) of the workpiece (W) to be polished in the series of polishing steps described above is manually set by the operator, but the workpiece (W) at the tip of the polishing means (2 ) is set. Since the cutting operation and the polishing operation by rotating the workpiece (W) in contact with the processing surface (P) of the workpiece (W) at a predetermined rotational speed are based on automatic control, the best polishing processing can be achieved and the productivity is improved. Improvements can be made.
第2の発明によれば、前記被研磨加工物(W)がクランプ手段(5)の把持部(6A)、(6B)に挟持された状態で基台(4)を下降させ被研磨加工物(W)より離間させたのち、該被研磨加工物(W)が前記回転手段(14A)、(14B)によりクランプ軸(12A)、(12B)を中心にして所定の角度にタクト回転されて次に研磨する加工面(P)が水平上向きに設定される。その時点で、前記基台(4)が上昇して被研磨加工物(W)を再び載置固定された状態となり、研磨手段(2)が接触回転しながら移送されて研磨加工を行うことができる。
前記した一連の研磨加工を、作業者の手作業を必要とせず、全自動で被研磨加工物(W)の各陵角部と各平面部の研磨加工を1加工面(P)毎に順次行うことができるものである。
According to the second invention, the workpiece (W) is lowered while the base (4) is lowered in a state where the workpiece (W) is sandwiched between the gripping portions (6A) and (6B) of the clamp means (5). After being separated from (W), the workpiece (W) is tact-rotated at a predetermined angle around the clamp shafts (12A) and (12B) by the rotating means (14A) and (14B). Next, the processing surface (P) to be polished is set horizontally upward. At that time, the base (4) is raised and the workpiece (W) is again placed and fixed, and the polishing means (2) is transferred while rotating in contact to perform polishing. it can.
The above-described series of polishing processes do not require the manual operation of the operator, and the polishing process of each corner portion and each plane portion of the workpiece (W) is automatically performed sequentially for each processing surface (P). Is something that can be done.
また、被研磨加工物(W)である素材が単結晶からなるシリコンブロックの各陵角部の研磨加工を前記のようにその加工面(P)が上向きにして停止させて1面毎に研磨する方法で研磨した場合は、陵角部と平面部との接合箇所の断面形状が起因して研磨手段(2)の先端の接触が不十分となってその接合箇所に存在するマイクロクラックの除去やその表面粗さの微細化がされていないことがあるから、前記回転手段(14A)、(14B)を連続回転させて被研磨加工物(W)であるシリコンブロックを柱軸中心に回転させて研磨加工する方法にすれば、前記陵角部の円弧面(R面)および該陵角部と平面部との接合箇所に研磨手段(2)の先端が十分に接触し押圧されて均一に研磨することができ、前記接合箇所に存在するマイクロクラックの除去とその表面粗さを微細化することが容易にできるものである。
Further, the polishing process of each corner portion of the silicon block whose material to be polished (W) is made of a single crystal is stopped with the processing surface (P) facing upward as described above to polish each surface. When polishing is performed by this method, the contact of the tip of the polishing means (2) becomes insufficient due to the cross-sectional shape of the joining portion between the corner portion and the flat portion, and the microcracks existing at the joining portion are removed. Since the surface roughness may not be refined, the rotating means (14A) and (14B) are continuously rotated to rotate the silicon block as the workpiece (W) about the column axis. According to the polishing method, the tip of the polishing means (2) is sufficiently brought into contact with the arc surface (R surface) of the corner portion and the joining portion between the corner portion and the flat portion and pressed uniformly. Can be polished and is present at the joint. It is one that can be easily be miniaturized and its surface roughness removal of click.
また、前記のように被研磨加工物(W)を連続回転させて各陵角部を同時に研磨加工する場合、クランプ手段(5)のクランプ軸(12A)、(12B)の軸心を中心にして回転するから、各陵角部を均一研磨するために、該被研磨加工物(W)の端面側から見たクランプ軸(12A)、(12B)の先端の把持部(6A)、(6B)の挟持位置は、芯出し調整がされてなければならない。   When the workpiece (W) is continuously rotated as described above to simultaneously grind each corner, the center of the clamp shafts (12A) and (12B) of the clamp means (5) is centered. Therefore, in order to uniformly polish each corner portion, the gripping portions (6A) and (6B) at the tips of the clamp shafts (12A) and (12B) viewed from the end face side of the workpiece (W) ) Must be centered and adjusted.
被研磨加工物(W)をその1陵角部を上向きにして基台(4)に載置し前記クランプ手段(5)のクランプ軸(12A)、(12B)を夫々前進させて把持部(6A)、(6B)が被研磨加工物(W)の両端面を挟持したときの被研磨加工物(W)の端面側から見た挟持位置について、その水平方向は、基台(4)の受け部材(7)に設けた切欠きV(8)により芯出し調整されているが、上下方向は、前工程においてシリコンインゴットを切断して形成された被研磨加工物(W)であるシリコンブロックの外形寸法に誤差が生じた場合、その誤差分の1/2に相当する量のズレが生ずるからその芯出し調整が必要となる。   The workpiece (W) is placed on the base (4) with its one corner facing upward, and the clamp shafts (12A) and (12B) of the clamp means (5) are advanced respectively to hold the gripping part ( 6A) and (6B), the horizontal direction of the clamping position as viewed from the end face side of the workpiece (W) when the both end faces of the workpiece (W) are clamped is determined by the horizontal direction of the base (4). Although the centering is adjusted by the notch V (8) provided in the receiving member (7), the vertical direction is a silicon block which is a workpiece (W) to be polished formed by cutting the silicon ingot in the previous step. If there is an error in the outer dimensions, an amount of deviation corresponding to ½ of the error occurs, so that centering adjustment is necessary.
前記、上下方向の芯出し調整をする方法は、前記高さ位置検出手段(3)を作動させて基台(4)に上向きに載置されている被研磨加工物(W)の陵角部の高さ(H1)を測定したのち、前記基台(4)を下降させて被研磨加工物(W)から離間させ回転手段(14A)、(14B)を180度回転させて前記下向きとなっていた被研磨加工物(W)の陵角部を上向きにしてその高さ(H2)を測定し、その測定結果を制御手段(13)に記憶させてその差分の1/2(=(H1−H2)/2)に相当する高さを上下方向の芯出し調整量として演算処理する。   The vertical centering adjustment method is performed by operating the height position detecting means (3) and inclining the workpiece (W) that is placed upward on the base (4). After the height (H1) is measured, the base (4) is lowered and separated from the workpiece (W), and the rotating means (14A) and (14B) are rotated 180 degrees so as to face downward. The height (H2) of the polished workpiece (W) is measured with the angled corner facing upward, the measurement result is stored in the control means (13), and the difference is 1/2 (= (H1 The height corresponding to −H2) / 2) is calculated as the centering adjustment amount in the vertical direction.
次に、基台(4)を上昇させ被研磨加工物(W)の下面を受け部材(7)に設けた切欠きV(8)に支持させ前記クランプ手段(5)のクランプ軸(12A)、(12B)を後退させて先端の把持部(6A)、(6B)が挟持している被研磨加工物(W)の両端面を開放した状態にしたのち、前記基台(4)が前記演算処理された上下方向の芯出し調整量に相当して移動し、前記クランプ手段(5)のクランプ軸(12A)、(12B)が前進して先端の把持部(6A)、(6B)が被研磨加工物(W)の両端面を挟持して上下方向の芯出し調整を完了することができる。   Next, the base (4) is raised, and the lower surface of the workpiece (W) is supported by the notch V (8) provided on the receiving member (7) to be clamped (12A) of the clamping means (5). , (12B) is retracted to open both ends of the workpiece (W) held by the gripping part (6A), (6B) at the tip, and then the base (4) is It moves corresponding to the calculated centering adjustment amount in the vertical direction, the clamp shafts (12A), (12B) of the clamp means (5) move forward, and the gripping portions (6A), (6B) at the tip end. The centering adjustment in the vertical direction can be completed by sandwiching both end faces of the workpiece (W).
第3の発明によれば、例えば研磨石等による研磨方法と比べて毛材は柔軟性があるので、被研磨加工物に研磨によるダメージを押さえることが出来る。毛材には砥粒が含有しているので、研磨力は十分に確保することができる。 According to the third invention, since the bristle material is more flexible than, for example, a polishing method using a polishing stone or the like, damage to the workpiece can be suppressed due to polishing. Since the bristle material contains abrasive grains, a sufficient polishing power can be secured.
第4の発明によれば、研磨具(10)を植設した回転板の位置(上下方向)を任意に設定することで、研磨手段(2)の底部より露出する毛材の長さを調整することができる。すなわち、毛材の摩耗に合わせて回転板の位置を下方に移動することで、常に露出している毛材の長さを一定に保つことが出来る。   According to the fourth invention, the length of the hair material exposed from the bottom of the polishing means (2) is adjusted by arbitrarily setting the position (vertical direction) of the rotating plate in which the polishing tool (10) is implanted. can do. In other words, the length of the hair material that is always exposed can be kept constant by moving the position of the rotating plate downward according to the wear of the hair material.
第5の発明によれば、砥粒を含有し互いに絡み合った弾性体が絡み合うことで、これらの集合体の内部には空気が包括されることとなり、これらを植設した研磨ブラシにて被加工物を加工する際、包括された空気層が緩衝材として働く。したがって、被研磨加工物(W)が該研磨ブラシと接触することによるダメージを低減することが出来る。   According to the fifth invention, the elastic bodies containing abrasive grains and entangled with each other are entangled with each other, so that air is contained inside these aggregates, and is processed by the polishing brush in which these are implanted. When processing an object, the enclosed air layer acts as a cushioning material. Therefore, damage due to the workpiece (W) being in contact with the polishing brush can be reduced.
第6の発明によれば、被研磨加工物(W)の種類や目的に応じて適宜研磨手段(2)を選択して加工をおこなうことができる。   According to the sixth aspect of the invention, it is possible to perform processing by appropriately selecting the polishing means (2) according to the type and purpose of the workpiece (W).
第7の発明によれば、被研磨加工物(W)の少なくとも2以上の異なる面に研磨手段(2)設置することで、同時に2面以上の加工を行うことが出来る。   According to the seventh aspect, by installing the polishing means (2) on at least two different surfaces of the workpiece (W), two or more surfaces can be processed simultaneously.
第8の発明によれば、被研磨加工物(W)の少なくとも2以上の異なる面に設置されたそれぞれの研磨手段(2)に対して、該被研磨加工物(W)の種類や目的に応じて適宜研磨手段(2)を選択して加工をおこなうことができる。   According to the eighth invention, for each polishing means (2) placed on at least two different surfaces of the workpiece (W), the type and purpose of the workpiece (W) Accordingly, the polishing means (2) can be appropriately selected and processed.
第9の発明によれば、砥粒の粒度が「粗」の研磨手段(2)により研磨力を向上させて研磨量を多くして被研磨加工物(W)の表層部に存在するマイクロクラックを容易に除去することができ、砥粒の粒度が「細」の研磨手段(2)により前記「粗」の研磨手段(2)の研磨加工で荒れた表面の凹凸を除去して表面粗さを微細にし、後工程において発生するクラックや割れ、欠けを無くすることができる。   According to the ninth invention, the microcracks present in the surface layer portion of the workpiece (W) to be polished by increasing the polishing power by the polishing means (2) having a coarse grain size and increasing the polishing amount. Can be easily removed, and the roughness of the surface roughened by the polishing process of the “rough” polishing means (2) is removed by the polishing means (2) having a grain size of “fine”. The cracks, cracks and chips generated in the subsequent process can be eliminated.
第10の発明によれば、複数台の研磨手段(2)を連接した際、それぞれの研磨手段(2)に植設された毛材に含まれる砥粒の粒度を略同一とすることで、被研磨加工物(W)の研磨加工時間を短縮することができる。 According to the tenth invention, when connecting a plurality of polishing means (2), by making the grain size of the abrasive grains contained in the hair material implanted in each polishing means (2) substantially the same, The polishing time of the workpiece (W) can be shortened.
第11の発明によれば、基台(4)の受け部材(7)に設けられた切欠きV(8)、(8)は、被研磨加工物(W)の陵角部を研磨する場合に、該被研磨加工物(W)の1陵角部が水平上向きとなるように載置したときに該被研磨加工物(W)の下側となる平面部を的確に載置固定することができ、前記基台(4)の受け部材(7)に設けられた切欠きL(9)、(9)は、被研磨加工物(W)の平面部を研磨する場合に、該被研磨加工物(W)の1平面部が水平上向きとなるように載置したときに該研磨加工物(W)の下側となる陵角部を的確に載置固定することができるものである。   According to the eleventh aspect, the notches V (8) and (8) provided in the receiving member (7) of the base (4) are used for polishing the dip portion of the workpiece (W). Further, when the workpiece is placed so that one corner portion of the workpiece (W) is horizontally upward, the plane portion on the lower side of the workpiece (W) is accurately placed and fixed. The notches L (9) and (9) provided in the receiving member (7) of the base (4) are used for polishing the planar portion of the workpiece (W). When the workpiece (W) is placed so that one plane portion is horizontally upward, the lower corner of the workpiece (W) can be accurately placed and fixed.
第12の発明によると、第1乃至第11のいずれかの発明に記載の研磨装置を使用することより、表層より100μmのマイクロクラックが除去され、かつ表面粗さRyが3μm以下である多角柱状部材を得ることができる。   According to the twelfth invention, by using the polishing apparatus according to any one of the first to eleventh inventions, a 100 μm microcrack is removed from the surface layer, and the surface roughness Ry is 3 μm or less. A member can be obtained.
第13の発明によると、第1乃至第11のいずれかの発明に記載の研磨装置を使用することにより、表層より100μmのマイクロクラックを除去し、かつ表面粗さRyが3μm以下とする多角柱状部材として、シリコンブロックやセラミックスといった硬脆材料を好適に用いることができる。   According to the thirteenth invention, by using the polishing apparatus according to any one of the first to eleventh inventions, a 100 μm microcrack is removed from the surface layer, and the surface roughness Ry is 3 μm or less. As the member, a hard and brittle material such as a silicon block or ceramics can be suitably used.
第14の発明によれば、前記第1の発明の効果にも記載した、被研磨加工物(W)の加工面(P)の設定は作業者の手動によるものであるが、研磨手段(2)の切込み量の設定やその作動は自動制御によるものであるから、作業者が替わっても加工精度と生産性を低下させることなく研磨加工ができるものであり、その研磨加工の手順を、各陵角部の研磨加工を終了させた後に各平面部の研磨加工を行うようにしたことにより各陵角部と平面部とが接合する繋ぎ箇所を「なだらか形状」に研磨することができ、表層部に存在するマイクロクラックと表面の凹凸の除去を容易に行えるものである。   According to the fourteenth invention, the setting of the processed surface (P) of the workpiece (W) described in the effect of the first invention is manually performed by the operator, but the polishing means (2 ) Cutting amount setting and its operation are based on automatic control, so even if the operator changes, polishing can be performed without reducing processing accuracy and productivity. By polishing each flat part after finishing the polishing process of the corner part, the joining point where each corner part and the flat part are joined can be polished to a "smooth shape". It is possible to easily remove microcracks and surface irregularities present in the part.
第15の発明によれば、前記第5の発明において作業者により行われていた被研磨加工物(W)の各加工面(P)の設定を、クランプ手段(5)のクランプ軸の先端の把持部(6)、(6)に被研磨加工物(W)を挟持した状態で、該被研磨加工物(W)を前記クランプ軸の軸心を中心に回転するようにした回転手段を設けたことにより、作業者の手間を省くことができるばかりでなく、前記回転手段により被研磨加工物(W)を連続回転させて該被研磨加工物(W)に上方より研磨手段(2)を下降させて研磨具(10)の先端を接触回転させながら移送させることにより、前記第5の発明の作用効果として得られる各陵角部と平面部とが接合する繋ぎ箇所の形状をさらに「なだらか形状」に研磨することができ、マイクロクラックや凹凸の除去をさらに的確に行えるものである。   According to the fifteenth invention, the setting of each processing surface (P) of the workpiece (W) that has been performed by the operator in the fifth invention is performed on the tip of the clamp shaft of the clamping means (5). Rotating means is provided for rotating the workpiece (W) about the axis of the clamp shaft in a state where the workpiece (W) is sandwiched between the gripping portions (6) and (6). As a result, not only can the labor of the operator be saved, but also the workpiece (W) is continuously rotated by the rotating means so that the polishing means (2) is placed on the workpiece (W) from above. By lowering and transferring the tip of the polishing tool (10) while rotating it in contact, the shape of the connecting portion where each horn portion and the flat portion obtained as the operational effect of the fifth invention are joined is further “slowly Can be polished to "shape", microcracks and irregularities In which further enables accurately removed.
第16の発明によれば、砥粒の粒度が異なる「粗」の研磨手段(2)と「細」の研磨手段(2)を2種類以上連設したことにより、砥粒の粒度が「粗」の研磨手段(2)の高研磨能力により被研磨加工物(W)の表層部に存在するマイクロクラック除去を的確にできるものであり、砥粒の粒度が「細」の研磨手段(2)の微細研磨能力により前記研磨加工でれた表層部の表面粗さを微細に研磨して、後工程における割れ、欠けの発生を無くすることができる。また、研磨手段(2)として採用する研磨ブラシは、後述の図2の説明(段落0040)に記載のように、砥粒を混合した毛材からなる研磨具(10)が消耗した際に、該研磨具(10)のみを新しい研磨具(10)に交換できるように、研磨具(10)を回転盤(11)に着脱自在にしたタイプと、研磨具(10)と回転盤(11)とを一緒に交換するように、研磨具(10)を回転盤(11)に固定取付けしたタイプ(図示せず)のどちらでも使用することができる。
According to the sixteenth aspect of the present invention, two or more types of “coarse” polishing means (2) and “fine” polishing means (2) having different abrasive grain sizes are connected, so that the grain size of the abrasive grains becomes “rough. "are those as possible out accurately the removal of micro cracks present in the surface portion of the polished workpiece (W) by the high polishing ability of a polishing means (2) of the polishing means of the abrasive grains of grain size is" fine "( The surface roughness of the surface layer portion roughened by the polishing process can be finely polished by the fine polishing ability of 2), thereby eliminating the occurrence of cracks and chips in the subsequent process. Further, the polishing brush employed as the polishing means (2) is used when the polishing tool (10) made of a hair material mixed with abrasive grains is consumed, as described in the description of FIG. 2 (paragraph 0040) described later. A type in which the polishing tool (10) is detachable from the rotating disk (11), and the polishing tool (10) and the rotating disk (11) so that only the polishing tool (10) can be replaced with a new polishing tool (10 ). to exchange together the door, you are possible to use grinding tool (10) either fixedly attached to the type rotary disc (11) (not shown).
第17の発明によれば、砥粒の粒度が略同一の研磨手段(2)を複数台連接したことにより、被研磨加工物(W)の研磨加工時間を短縮することができる。また、先述と同様に、研磨手段(2)として採用する研磨ブラシは、砥粒を含有した毛材を研磨ブラシの底部に複数本植設されているもの、砥粒を含有した毛材を複数本束ねた研磨具(10)を研磨ブラシの回転盤(11)に複数本植設したもの、砥粒を含有し互いが絡み合った繊維状の弾性体が研磨ブラシの底部に複数本植設されているもの、の中から選択することができる。また、前記研磨具(10)を前記回転盤(11)に複数本植設する場合は、後述の図2の説明に記載のように、砥粒を混合した毛材からなる研磨具(10)が消耗した際に、該研磨具(10)のみを新しい研磨具(10)に交換できるようにした回転盤(11)に着脱自在にしたタイプと、図示しない回転盤共々交換するように研磨具を回転盤に固定取付けしたタイプのどちらでも良いものである。
According to the seventeenth invention, the polishing time of the workpiece (W) to be polished can be shortened by connecting a plurality of polishing means (2) having substantially the same grain size. In the same manner as described above, the polishing brush employed as the polishing means (2) has a plurality of hair materials containing abrasive grains planted at the bottom of the polishing brush , and a plurality of hair materials containing abrasive grains. A plurality of bundled polishing tools (10) are planted on a rotating disk (11) of a polishing brush , and a plurality of fibrous elastic bodies containing abrasive grains and entangled with each other are planted on the bottom of the polishing brush. You can choose from what you have. Moreover, when planting a plurality of the polishing tools (10) on the rotating disk (11), as described in the description of FIG. 2 described later, the polishing tool (10) made of a hair material mixed with abrasive grains. A tool that is detachably attached to a rotating disk (11) that can replace only the polishing tool (10) with a new polishing tool (10) and a rotating tool that is not shown in the figure. Either of the types fixed to the rotating disk can be used.
本発明の研磨装置の全体を示す正面図である。It is a front view which shows the whole polishing apparatus of this invention. 本発明の研磨手段の研磨具に研磨ブラシを採用した1例を示すもので、(A)はその正面から見た一部切り欠き断面図、(B)は底面図である。An example which employ | adopted the polishing brush as the grinding | polishing tool of the grinding | polishing means of this invention is shown, (A) is a partially notched sectional view seen from the front, (B) is a bottom view. 本発明の基台の一部切り欠き斜視図である。It is a partially cutaway perspective view of the base of the present invention. 前記図3の基台に取付ける受け部材の製造過程を示す説明図である。It is explanatory drawing which shows the manufacture process of the receiving member attached to the base of the said FIG. 本発明に係る形状が四角柱状の被研磨加工物を示す斜視図であって、(A)は陵角部が微小C面の被研磨加工物を示し、(B)は陵角部がR面の被研磨加工物を示す。BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective view which shows the to-be-polished workpiece in which the shape which concerns on this invention is a square pillar shape, Comprising: (A) shows the to-be-processed object in which a corner | angular part is a micro C surface, (B) has a corner | angular part in the R surface The workpiece to be polished is shown. 本発明の基台に図5(B)に示す陵角部がR面の被研磨加工物を載置した状態を示す断面図であって、(A)は加工面を陵角部にしたときを示し、(B)は加工面を平面部としたときを示すものである。FIG. 5B is a cross-sectional view showing a state in which a workpiece to be polished whose R surface is an R surface is placed on the base of the present invention, and FIG. (B) shows the case where the processed surface is a plane portion. 前記図5(B)に示す陵角部がR面の被研磨加工物の該陵角部と平面部との接合箇所の拡大図である。FIG. 5 (B) is an enlarged view of a joining portion between the corner portion and the flat portion of the workpiece to be polished whose R-face is an R surface.
本発明の研磨粗さが異なる研磨手段を2連以上(3連)備えた多角柱状部材の研磨装置の構成内容と作動の詳細について、図を用いて説明する。   The configuration contents and details of the operation of the polishing apparatus for a polygonal columnar member provided with two or more (three) polishing means having different polishing roughness according to the present invention will be described with reference to the drawings.
図1は、図中右端の研磨開始前位置に停止している研磨ユニット1と、基台4上に載置される2点鎖線で示す被研磨加工物Wの図中左右にクランプ手段5のシリンダー駆動により摺動する基準側のクランプ軸12Aの先端の把持部6Aと、従動側のクランプ軸12Bの先端の把持部6Bが夫々後退していて被研磨加工物Wの挟持をしていない開放状態を示す研磨装置の正面図であって、前記研磨ユニット1には、「粗研磨用」、「中研磨用」、「仕上げ研磨用」として3種類の砥粒の粒度が異なり選択設定された研磨ブラシから成る各研磨手段2を図中右側から左側に連設し、前記「粗研磨用」の研磨手段2の図中右側に研磨開始前に被研磨加工物Wの加工面Pの高さ位置を検出するための高さ位置検出手段3が設けられている。   FIG. 1 shows a polishing unit 1 stopped at a position before starting polishing at the right end in the drawing, and a workpiece W to be polished shown by a two-dot chain line placed on a base 4 in the right and left in the drawing. The gripping portion 6A at the tip end of the reference-side clamp shaft 12A that slides by driving the cylinder and the gripping portion 6B at the tip end of the driven-side clamp shaft 12B are retracted so that the workpiece W is not pinched. FIG. 1 is a front view of a polishing apparatus showing a state, and the polishing unit 1 is selectively set with three types of abrasive grain sizes as “rough polishing”, “medium polishing”, and “finish polishing”. Each polishing means 2 composed of a polishing brush is provided continuously from the right side to the left side in the drawing, and on the right side in the drawing of the “rough polishing” polishing means 2, the height of the processing surface P of the workpiece W before polishing is started. Height position detecting means 3 for detecting the position is provided.
前記した3連の研磨手段2における「粗研磨用」は研磨能力を大として表層部に存在するマイクロクラックの大半を削り取る目的で設けるものであり、「中研磨用」はバンドソーもしくはワイヤソーにより切断したときに発生した表面の凹凸除去と前記「粗研磨」で荒れた表面を微細化する目的で設けるものであり、「仕上げ研磨用」は表面粗さの最終調整を目的に設けるものである。なお、前記「中研磨」の段階で表面の凹凸除去と表面粗さの微細化調整が完了すれば、研磨手段2を2連にしても良いものである。   “Rough polishing” in the above-described triple polishing means 2 is provided for the purpose of scraping most of microcracks existing in the surface layer portion with a large polishing ability, and “medium polishing” was cut with a band saw or a wire saw. It is provided for the purpose of removing irregularities on the surface that is sometimes generated and refining the roughened surface by the “rough polishing”, and “for final polishing” is provided for the purpose of final adjustment of the surface roughness. Note that the polishing means 2 may be doubled if the removal of the surface irregularities and the adjustment of the surface roughness are completed at the stage of “medium polishing”.
前記のように、研磨具10に含有される砥粒の粒度が異なる研磨手段2とその研磨粗さ(粗、中、仕上げ)の組合せを決定したら、該研磨具10の「被研磨加工物Wの研磨加工部位(陵角部または平面部)が異なっても同一とする回転速度」、「研磨加工部位が陵角部または平面部の違いにより異なる研磨移送速度」、「研磨加工完成品の標準片(マスターワーク)を高さ位置検出手段3により測定した研磨開始時の基準高さ」、「被研磨加工物Wの加工面Pに対する切り込み量」の各加工条件を制御手段13に設定する。   As described above, when the combination of the polishing means 2 and the polishing roughness (coarse, medium, and finish) having different particle sizes of the abrasive grains contained in the polishing tool 10 is determined, the “workpiece W to be polished W” of the polishing tool 10 is determined. ”The same rotation speed even if the polishing part (later angle part or flat part) is different”, “The polishing transfer speed where the polishing part differs depending on the difference in the horn part or flat part”, “Standard of finished polishing process product” Each control condition of the reference height at the start of polishing measured by the height position detecting means 3 and the “cutting amount with respect to the processed surface P of the workpiece W” is set in the control means 13.
前記の加工条件を設定した後に、作業者が前記クランプ手段5の把持部6A、6B間の基台4上に被研磨加工物Wの4陵角部のいずれかの加工面Pが水平上向きとなるように載置して「研磨加工部位(陵角部または平面部)の設定スイッチ」と「研磨開始スイッチ」を「ON」すれば、前記研磨ユニット1が図中左端に移動し、前記クランプ手段5の図示されていないシリンダーの起動により基準側のクランプ軸12Aが摺動して把持部6Aが図中「基準端面位置」まで前進して被研磨加工物Wの一方の端面を位置決めした後、従動側のクランプ軸12Bが摺動して把持部6Bが前進し被研磨加工物Wの他方の端面に接触し押圧して前記被研磨加工物Wが挟持固定される。   After the processing conditions are set, the operator can make sure that the processing surface P of one of the four corners of the workpiece W is horizontally upward on the base 4 between the gripping portions 6A and 6B of the clamping means 5. When the “set switch for polishing portion (long angle or flat portion)” and “polishing start switch” are set to “ON”, the polishing unit 1 moves to the left end in the figure, and the clamp After the cylinder (not shown) of the means 5 is activated, the clamp shaft 12A on the reference side slides and the gripping portion 6A advances to the “reference end face position” in the drawing to position one end face of the workpiece W to be polished. Then, the clamp shaft 12B on the driven side slides and the gripping portion 6B moves forward to come into contact with and press the other end surface of the workpiece W to be clamped and fixed.
次に、研磨ユニット1が図中右側へ移送し高さ位置検出手段3が作動して被研磨加工物Wの加工面Pの高さを検知しその信号を制御手段13に送信して演算処理され、該被研磨加工物Wの加工面Pに対する前記研磨手段2の研磨具10の先端の切り込み量が自動設定された後、前記「研磨加工部位(陵角部または平面部)の設定スイッチ」により移送速度が自動設定された前記研磨ユニット1が図中右側へさらに移送して各研磨手段2が「粗研磨」、「中研磨」、「仕上げ研磨」の順に研磨加工を行う。   Next, the polishing unit 1 is moved to the right side in the figure, and the height position detecting means 3 is activated to detect the height of the processed surface P of the work W to be polished, and the signal is transmitted to the control means 13 to perform arithmetic processing. Then, after the cutting amount of the tip of the polishing tool 10 of the polishing means 2 with respect to the processing surface P of the workpiece W is automatically set, the “setting switch for the polishing processing portion (the corner portion or the flat portion)” Thus, the polishing unit 1 whose transfer speed is automatically set is further transferred to the right side in the drawing, and each polishing means 2 performs polishing in the order of “rough polishing”, “medium polishing”, and “finish polishing”.
研磨加工が終了したら、被研磨加工物Wの両端面を挟持している前記クランプ手段5のクランプ軸12A、12Bが後退作動してその先端の把持部6A、6Bが被研磨加工物Wの挟持状態を自動解除するから、基台4に載置されている前記被研磨加工物Wを次の加工面Pが上向きになるように作業者が手動により反転した後、クランプ手段5のクランプ軸12A、12Bを再度前進作動させて把持部6A、6Bにより被研磨加工物Wの両端面を挟持固定し次の加工面Pを自動研磨加工するようにした第1の発明の半自動タイプの研磨装置と、前記被研磨加工物Wがクランプ手段5の把持部6A、6Bにより挟持された状態で図示しない昇降手段により基台4を下降させて被研磨加工物Wの載置固定の状態を解除し、該被研磨加工物Wを前記回転手段14A、14Bによりクランプ軸12A、12Bを中心にして所定角度を回転させて次に研磨する加工面Pが水平上向きに設定し、その時点で、基台4が上昇して被研磨加工物Wを再び載置固定して各陵角部と各平面部のいずれかの加工面Pを1面毎に研磨加工を順次行う、または、前記各陵角部の研磨加工を回転手段14A、14Bにより連続回転させて同時に研磨したのち各平面部の加工面Pを1面毎に自動研磨加工するようにした第2の発明の全自動タイプがある。   When the polishing process is completed, the clamp shafts 12A and 12B of the clamp means 5 holding the both end faces of the workpiece W are moved backward so that the gripping portions 6A and 6B at the tips of the clamp means 5 hold the workpiece W. Since the state is automatically released, the operator manually inverts the workpiece W placed on the base 4 so that the next processing surface P faces upward, and then the clamp shaft 12A of the clamp means 5 is used. The semi-automatic type polishing apparatus according to the first aspect of the present invention is configured such that 12B is moved forward again and both end surfaces of the workpiece W are sandwiched and fixed by the gripping portions 6A and 6B and the next processing surface P is automatically polished. In a state where the workpiece W is sandwiched between the gripping portions 6A and 6B of the clamp means 5, the base 4 is lowered by an elevator means (not shown) to release the mounting and fixing state of the workpiece W. The workpiece W to be polished is The processing surface P to be polished next is set horizontally upward by rotating a predetermined angle around the clamp shafts 12A and 12B by means 14A and 14B, and at that time, the base 4 is raised and the workpiece W to be polished W Is mounted and fixed again, and the processing surface P of each of the corner portions and each plane portion is sequentially polished for each surface, or the polishing processing of each corner portion is performed by the rotating means 14A and 14B. There is a fully automatic type of the second invention in which the processing surface P of each plane portion is automatically polished for each surface after being continuously rotated and simultaneously polished.
図2(A)および(B)は、前記研磨手段2としての研磨ブラシの1例を示すものである。 この研磨ブラシでは研磨具10を採用しており、研磨具10は、砥粒を混合したナイロン等の合成樹脂からなる毛材を束ねて構成している。 該研磨具10の基部回転駆動源に連結し水平回転するようにした回転盤11に着脱自在に取付けてあり該研磨具10の下端が被研磨加工物Wの加工面Pに接触回転して研磨を行うようになっている。 研磨具10が磨耗したら該研磨具10を回転盤11から取外し新しい研磨具10に交換できるものである。なお、研磨手段2としては、図2に示すような研磨具10採用した研磨ブラシに限るものでなく、砥粒を混合した毛材からなる研磨具10を回転盤11に直接取付けて永久固定した研磨ブラシ(図示せず)を使用することもできる。 この場合、該研磨具10が磨耗したら研磨具10と回転盤11を一緒に交換するようになっている。 2A and 2B show an example of a polishing brush as the polishing means 2 . This polishing brush employs a polishing tool 10, and the polishing tool 10 is configured by bundling hair materials made of synthetic resin such as nylon mixed with abrasive grains . The base of the grinding tool 10 is attached detachably to the rotary disc 11 which is adapted to connected to a rotational drive source for horizontal rotation, the lower end of the polishing tool 10 is rotated in contact with the working surface P of the polished workpiece W Polishing is performed. When the polishing tool 10 is worn, the polishing tool 10 can be removed from the rotating disk 11 and replaced with a new polishing tool 10. As the polishing means 2 is not limited to the polishing brush employing the grinding tool 10 as shown in FIG. 2, is attached directly to the polishing member 10 made of a bristle material obtained by mixing abrasive grains into the rotary disc 11 permanent A fixed polishing brush (not shown) can also be used. In this case, when the polishing tool 10 is worn, the polishing tool 10 and the rotating disk 11 are exchanged together .
図3は、前記被研磨加工物Wの陵角部または平面部のいずれか1面を加工面Pとして水平上向きに載置できるようにした基台4を示す一部切り欠きの斜視図であり、図4は、基台4に立設する平板状の受け部材7の製造過程を示した説明図であって、該受け部材7は、前記被研磨加工物Wのいずれか1陵角部を研磨するときに該1陵角部が水平上向きに載置できるようにその下側となる平面部が載置される切欠き(V)8が形成されると共に、前記被研磨加工物Wの各平面部のいずれか1平面部を研磨するときに該1平面部を上向きに載置できるようにその下側となる陵角部が係止できる切欠き(L)9が前記切欠き(V)8に形成されたものである。なお、前記図3に示した基台4は、被研磨加工物Wの加工面Pである陵角部および平面部の兼用ダイプを示したが、陵角部と平面部を別々とした専用タイプにしてもよいものである。   FIG. 3 is a partially cutaway perspective view showing the base 4 that can be placed horizontally upward with either one of the horn portion or the flat portion of the workpiece W as a processing surface P. FIG. 4 is an explanatory view showing the manufacturing process of the flat plate-shaped receiving member 7 standing on the base 4, and the receiving member 7 has any one corner portion of the workpiece W to be polished. A notch (V) 8 is formed on which the lower flat portion is placed so that the one corner portion can be placed horizontally upward when polishing, and each of the workpieces W to be polished is formed. The notch (L) 9 is a notch (V) that can lock the lower corner portion so that the one planar portion can be placed upward when any one of the planar portions is polished. 8 is formed. In addition, although the base 4 shown in the said FIG. 3 showed the die | dye of the corner | angular part which is the process surface P of the to-be-polished workpiece W, and a plane part, the exclusive type which made the corner part and the plane part separate. It may be.
図5(A)および(B)は、被研磨加工物Wの形状が四角柱状の1例を示す斜視図であり、(A)は角形の原材料から平面部となる四面を切り出してその陵角部が角形とし微小のC面を形成したものであり、(B)は円柱状の原材料から平面部となる四面を切り出したもので、その陵角部に原材料の円柱状の一部を残してR面となるように形成されたものである。   FIGS. 5A and 5B are perspective views showing an example in which the shape of the workpiece W is a quadrangular prism, and FIG. 5A is a perspective view of a square surface cut out from a rectangular raw material. The part is square and has a fine C surface, and (B) is a four-sided part cut out from a cylindrical raw material, leaving a cylindrical part of the raw material at the corner. It is formed so as to be an R plane.
図6(A)および(B)は、被研磨加工物(W)を基台4上に載置した側面から見た断面図であって、(A)は被研磨加工物Wの陵角部を研磨加工するときに、被研磨加工物Wをその加工面Pを上向きにして基台4の受け部材7に載置した状態を示し、(B)は被研磨加工物Wの平面部を研磨加工するときに、被研磨加工物Wをその加工面Pを上向きにして基台4の受け部材7に載置した状態を示すものである。   6A and 6B are cross-sectional views of the workpiece (W) viewed from the side where the workpiece (W) is placed on the base 4, and (A) is a corner portion of the workpiece W to be polished. Shows a state in which the workpiece W is placed on the receiving member 7 of the base 4 with the processing surface P facing upward, and (B) shows the polishing of the flat portion of the workpiece W 3 shows a state where the workpiece W is placed on the receiving member 7 of the base 4 with the processing surface P facing upward when processing.
以下に、被研磨加工物Wを四角柱状のシリコンブロックとし、前記被研磨加工物Wの4平面部と4陵角部を本発明の研磨装置を用いて研磨加工してその表層部に存在するマイクロクラックとその表面の凹凸を除去して表面粗さを微細化して研磨効果を評価し、当該シリコンブロックをワイヤソーでスライス加工してシリコンウエハを形成したときに、そのシリコンウエハの割れ・欠け等による不良品の発生率を低減することができた実施例について述べる。   In the following, the workpiece W is a quadrangular columnar silicon block, and the four planar portions and the four corners of the workpiece W are polished using the polishing apparatus of the present invention and exist in the surface layer portion. Micro-cracks and surface irregularities are removed to reduce the surface roughness and evaluate the polishing effect. When a silicon wafer is formed by slicing the silicon block with a wire saw, the silicon wafer is cracked or chipped. An example in which the incidence of defective products due to the above can be reduced will be described.
前記被研磨加工物Wとした単結晶のシリコンブロックの仕様について詳しく述べれば、断面が円柱形状で製造された単結晶のシリコンインゴットをバンドソーもしくはワイヤソーを用いて500mmの長さ(L)に切断し、その長さ方向に円柱壁面を四面切断除去して4平面部を形成するとともに、該2平面部が交わる陵角部を切断前の円柱壁面の一部の円弧幅が約25mmを残してR形状とした図5(B)に示す四角柱状とし、その大きさを(□)125mm×125mm、(L)500mmにして切断形成されたものである。   Describing in detail the specifications of the single-crystal silicon block used as the workpiece W, a single-crystal silicon ingot having a cylindrical cross section is cut to a length (L) of 500 mm using a band saw or wire saw. The cylindrical wall surface is cut and removed in the length direction to form four plane portions, and the arcuate corner where the two plane portions intersect is left with a circular arc width of a part of the cylindrical wall surface before cutting leaving about 25 mm. The rectangular prism shape shown in FIG. 5 (B) is used, and the size is (□) 125 mm × 125 mm and (L) 500 mm.
研磨加工前の前記被研磨加工物Wの陵角部および平面部の表層部には、深さが80〜100μmのマイクロクラックが存在しその表面粗さは(Ry)9〜11μmであり、該シリコンブロックをワイヤソーでスライス加工してシリコンウエハにしたときの割れ・欠け等による不良品の発生率が5〜6%であった。   Microcracks having a depth of 80 to 100 μm are present in the surface layer portion of the horn portion and the plane portion of the workpiece W before polishing, and the surface roughness is (Ry) 9 to 11 μm, When the silicon block was sliced with a wire saw to form a silicon wafer, the incidence of defective products due to cracks, chips, etc. was 5 to 6%.
本実施例に用いる研磨装置に、前記第1の発明に記載の研磨装置を用いて前記被研磨加工物(W)としたシリコンブロックを研磨加工してマイクロクラックおよび凹凸の除去と表面粗さの微小化した後、該シリコンブロックをスライス加工してシリコンウエハを形成したときの割れ・欠け等による不良品の発生率を低減させた結果について述べる。   In the polishing apparatus used in this example, the silicon block as the workpiece (W) was polished by using the polishing apparatus according to the first invention to remove microcracks and irregularities and the surface roughness. The result of reducing the occurrence rate of defective products due to cracks, chips, etc. when the silicon block is formed by slicing the silicon block after miniaturization will be described.
研磨手段2に採用する研磨ブラシの砥粒の粒度を選択設定するために作成した「研磨ブラシの砥粒の粒度に対する被研磨加工物Wの表面粗さ(Ry)」の関係を示す参考資料を次の表1に示す。   Reference material showing the relationship of “surface roughness (Ry) of workpiece W to abrasive grain size of polishing brush” created in order to select and set the abrasive grain size of polishing brush employed in polishing means 2 It is shown in the following Table 1.
また、研磨手段2の研磨具10の先端を被研磨加工物Wの加工面Pより突出させる切り込み量を設定するために作成した「研磨ブラシの砥粒の粒度毎の切り込み量に対するシリコンインゴットを切断してシリコンブロックを形成する前工程における切断手段の違い並びに切断面の表面仕上げの有無による被研磨加工物Wの削り代(μm)」の関係を示す参考資料を次の表2に示す。   In addition, “a silicon ingot is cut with respect to the cutting amount for each abrasive grain size of the polishing brush” created to set the cutting amount by which the tip of the polishing tool 10 of the polishing means 2 protrudes from the processing surface P of the workpiece W. Table 2 below shows the reference materials showing the relationship between the difference in the cutting means in the previous step of forming the silicon block and the machining allowance (μm) of the workpiece W depending on whether or not the surface of the cut surface is finished.
研磨開始前の準備事項として、次に示すa)〔研磨手段2の研磨粗さの選択設定〕を決定して研磨ユニット1に取付けて、b)〔研磨手段2の各研磨具10の基準高さの設定〕を実行して制御手段13に自動入力設定した後、c)〜e)の各加工条件を制御手段13に手入力設定する。
a)〔研磨手段2の研磨粗さの選択設定〕研磨ブラシの砥粒の粒度を、上記表1を参考にして粗研磨用:#240、中研磨用:#500、仕上げ研磨用:#800、の3種類を選定して連設した研磨手段2とする。
b)〔研磨手段2の各研磨具10の基準高さの設定〕研磨加工完成品の標準片(マスターワーク)を基台4に載置して、該標準片の陵角部および平面部の高さ位置を高さ位置検出手段3により測定することにより、その測定結果が研磨手段2の各研磨具10の研磨開始前の基準高さとして制御手段13に自動設定される。
c)〔研磨手段2の研磨具10の回転速度の設定〕15m/sec。
d)〔研磨手段2の研磨具10の研磨移送速度の設定〕(陵角部の固定研磨)40mm/sec、(平面部の研磨)20mm/sec。
e)〔研磨手段2の各研磨具10の加工面Pに対する切り込み量の設定〕前記選択設定された各研磨ブラシの加工面(P)に対する切り込み量を、上記表2を参考にして粗研磨用(#240):0.5mm、中研磨用(#500):0.7mm、仕上げ研磨用(#1100):0.8mm、に決定する。
As preparation items before polishing, the following a) [selection setting of polishing roughness of the polishing means 2] is determined and attached to the polishing unit 1, and b) [reference height of each polishing tool 10 of the polishing means 2] Then, the processing conditions c) to e) are manually set in the control means 13.
a) [Selection Setting of Polishing Roughness of Polishing Means 2] The abrasive grain size of the polishing brush was determined by referring to Table 1 above for rough polishing: # 240, medium polishing: # 500, final polishing: # 800 The polishing means 2 is selected and connected in series.
b) [Setting of the reference height of each polishing tool 10 of the polishing means 2] A standard piece (master work) of a polished product is placed on the base 4, and the corner and flat portions of the standard piece are placed. By measuring the height position by the height position detecting means 3, the measurement result is automatically set in the control means 13 as a reference height before starting polishing of each polishing tool 10 of the polishing means 2.
c) [Setting of rotational speed of polishing tool 10 of polishing means 2] 15 m / sec.
d) [Setting of the polishing transfer speed of the polishing tool 10 of the polishing means 2] (fixed polishing of the corner portion) 40 mm / sec, (polishing of the flat portion) 20 mm / sec.
e) [Setting of the cutting amount for the processing surface P of each polishing tool 10 of the polishing means 2] The cutting amount for the processing surface (P) of each of the selected polishing brushes is determined for rough polishing with reference to Table 2 above. (# 240): 0.5 mm, medium polishing (# 500): 0.7 mm, and final polishing (# 1100): 0.8 mm.
本発明において、陵角部と平面部の研磨加工を同一の研磨粗さの研磨手段2で研磨したときに平面部より陵角部が容易に研磨できる傾向であって、この要因は研磨箇所の形状の違いによるものと考えられる。このようなことから、前記に設定した陵角部と平面部のc)〔研磨手段2の研磨具10の回転速度の設定〕(=15m/sec)を同一速度にし、d)〔研磨手段2の研磨具10の研磨移送速度の設定〕において、平面部の研磨移送速度(20mm/sec)を正とし陵角部の移送速度(40mm/sec)を速く設定して、研磨加工時間を短縮できるように設定したものである。   In the present invention, when polishing the corner portion and the flat portion with the polishing means 2 having the same polishing roughness, the corner portion tends to be easily polished from the flat portion. This is probably due to the difference in shape. For this reason, c) [setting of the rotational speed of the polishing tool 10 of the polishing means 2] (= 15 m / sec) is set to the same speed, and d) [polishing means 2]. In the setting of the polishing transfer speed of the polishing tool 10], the polishing transfer speed (20 mm / sec) of the flat surface portion is set to be positive, and the transfer speed (40 mm / sec) of the sloping corner portion is set to be high, thereby shortening the polishing processing time. It is set as follows.
c)〔研磨手段2の研磨具10の回転速度の設定〕を速く設定すれば、研磨力を大とし研磨加工時間を短くすることができるもので、また、陵角部と平面部の回転速度を異なる回転速度に設定すれば、陵角部と平面部の表面粗さ調整ができるものである。   c) If [setting of the rotational speed of the polishing tool 10 of the polishing means 2] is set fast, the polishing power can be increased and the polishing time can be shortened. Is set to a different rotation speed, the surface roughness of the corner portion and the flat portion can be adjusted.
d)〔研磨手段2の研磨具10の研磨移送速度の設定〕を速く設定すれば研磨力を小とし研磨加工時間を短くすることができるものである。   d) If [setting of the polishing transfer speed of the polishing tool 10 of the polishing means 2] is set fast, the polishing force can be reduced and the polishing time can be shortened.
前記のように準備事項の設定が完了したら、クランプ手段5の把持部6A、6Bの間の基台4上に被研磨加工物(W)の陵角部のいずれか一面が水平上向きとなるように載置した後に制御手段13の研磨開始スイッチを「ON」して研磨加工を開始させて、クランプ手段5のクランプ軸12A、12Bの前進と後退に伴い把持部6A、6Bが被研磨加工物Wの両端面を挟持し解除する作動と、前記被研磨加工物Wのセットされた1加工面Pの研磨加工が終了して挟持状態が解除されたときに次の加工面Pを水平上向きとなるように作業者が反転して4陵角部を1面毎に研磨した後に4平面部を1面毎に順次研磨して3個のシリコンブロックを研磨加工した。   When the setting of the preparation items is completed as described above, any one of the corners of the workpiece (W) is horizontally upward on the base 4 between the gripping portions 6A and 6B of the clamp means 5. Then, the polishing start switch of the control means 13 is turned “ON” to start the polishing process, and the gripping portions 6A and 6B are made to be polished as the clamp shafts 12A and 12B of the clamp means 5 move forward and backward. The operation of clamping and releasing both end faces of W, and the next machining surface P to be horizontally upward when the grinding process of the one machining surface P on which the workpiece W is set is finished and the clamping state is released Then, the operator turned over and polished the four corners for each surface, and then sequentially polished the four flat surfaces for each surface to polish three silicon blocks.
その結果、被研磨加工物Wのセット時間も含めた1個のシリコンブロックの研磨加工に要した研磨時間が24分34秒〜24分45秒(平均:24分40秒)、1面の研磨量(=深さ)が各陵角部108μm〜126μm(平均:119μm)、各平面部98μm〜110μm(平均:104μm)、マイクロクラックの最大深さが1.6μm、表面粗さが陵角部Ry0.7〜1.0(平均:Ry0.8)、平面部Ry0.8〜1.1(平均:Ry0.9)、であって、マイクロクラックおよび凹凸の除去と表面粗さを微小化することができ、そのシリコンブロックを3個ともワイヤソーでスライス加工してシリコンウエハにしその割れ・欠け等による不良品の発生率を調べた結果、その発生率を1.0%低減することができた。   As a result, the polishing time required for polishing a single silicon block including the set time of the workpiece W is 24 minutes 34 seconds to 24 minutes 45 seconds (average: 24 minutes 40 seconds). The amount (= depth) of each corner is 108 μm to 126 μm (average: 119 μm), each plane is 98 μm to 110 μm (average: 104 μm), the maximum depth of the microcracks is 1.6 μm, and the surface roughness is the corner Ry 0.7 to 1.0 (average: Ry 0.8), flat surface portion Ry 0.8 to 1.1 (average: Ry 0.9), which removes microcracks and irregularities and miniaturizes the surface roughness. As a result of slicing all three silicon blocks with a wire saw into a silicon wafer and examining the occurrence rate of defective products due to cracks, chips, etc., the occurrence rate was reduced by 1.0%. .
なお、前記マイクロクラックの最大深さ(1.6μm)が存在した箇所は、図7に示す「陵角部と平面部との接合箇所」であって、他の陵角部または平面部に存在したマイクロクラックの深さはすべて0.7〜1.0μmであった。このことから、各陵角部と各平面部の加工面(P)を1面毎に研磨する手段では、図7の斜線部に示すような「陵角部と平面部との接合箇所」の研磨加工が困難であるものと判断する。   In addition, the location where the maximum depth (1.6 μm) of the microcracks is present is the “joint location between the corner portion and the plane portion” shown in FIG. 7, and is present in another corner portion or the plane portion. The depths of the microcracks were all 0.7 to 1.0 μm. Therefore, in the means for polishing the processing surface (P) of each corner and each plane portion on a surface-by-surface basis, the “joint portion between the corner portion and the plane portion” as shown by the hatched portion in FIG. Judge that polishing is difficult.
また、マイクロクラックの最大深さが2.3μmの範囲のでは、数十ミクロンの厚さにスライス加工してシリコンウエハにしたときの割れ・欠け等による不良品の発生率に与える影響が少ないことも判明した。従来、マイクロクラックの深さが「3.0μm以上」で前記の不良品の発生率を増大させるものと考えられている。   In addition, when the maximum depth of microcracks is in the range of 2.3 μm, there is little effect on the incidence of defective products due to cracks or chips when sliced into a silicon wafer with a thickness of several tens of microns. Also turned out. Conventionally, it is considered that when the depth of microcracks is “3.0 μm or more”, the occurrence rate of the defective product is increased.
被研磨加工物Wに前記実施例1と同一のシリコンブロックを用い研磨装置に前記第2の発明に記載の研磨装置を用い、回転手段14A、14Bを連続回転させて被研磨加工物Wをクランプ軸12A、12Bの軸心を中心に回転させながら4陵角部の研磨加工を同時に行った後、回転手段14A、14Bを所定の角度(本実施例では「90度」)を回転させて4平面部の研磨加工を1面ごとに行った経過と、シリコンブロックにおけるマイクロクラックの残存状況と表面粗さ、および該シリコンブロックをスライス加工してシリコンウエハにしたときの割れ・欠け等による不良品の発生率を低減した結果について述べる。   The same silicon block as that of the first embodiment is used for the workpiece to be polished W, the polishing apparatus according to the second invention is used for the polishing apparatus, and the rotating means 14A and 14B are continuously rotated to clamp the workpiece W to be polished. After simultaneously rotating the four corners while rotating about the shaft centers of the shafts 12A and 12B, the rotating means 14A and 14B are rotated by a predetermined angle (“90 degrees” in this embodiment) to obtain 4 Defective product due to the progress of polishing each flat surface, the remaining state and surface roughness of microcracks in the silicon block, and cracks / chips when the silicon block is sliced into a silicon wafer The result of reducing the occurrence rate is described.
研磨開始前の準備事項として、a)〔研磨手段2の研磨粗さの選択設定〕、b)〔研磨手段2の各研磨具10の基準高さの設定〕、c)〔研磨手段2の研磨具10の回転速度の設定〕、e)〔研磨手段2の各研磨具10の加工面(P)に対する切り込み量の設定〕、を前記実施例1で設定した条件と同様に設定した後、d)〔研磨手段2の研磨具10の研磨移送速度の設定〕(陵角部の研磨)回転研磨による2mm/sec、(平面部の研磨)20mm/secと、新たにf)〔回転手段14A、14Bの回転条件の設定〕(陵角部の研磨)連続回転/105min−1、(平面部の研磨)角度回転/90度、を制御手段13に手入力設定する。   As preparation items before starting polishing, a) [selection and setting of polishing roughness of polishing means 2], b) [setting of reference height of each polishing tool 10 of polishing means 2], c) [polishing of polishing means 2] Setting the rotational speed of the tool 10], e) [setting the cutting amount for the processing surface (P) of each polishing tool 10 of the polishing means 2], in the same manner as the conditions set in the first embodiment, d ) [Setting of the polishing transfer speed of the polishing tool 10 of the polishing means 2] (Polishing of the corner portion) 2 mm / sec by rotation polishing (polishing of the flat portion) 20 mm / sec, and f) [Rotating means 14A, 14B Rotation Condition Setting] (Polishing the corner portion) Continuous rotation / 105 min−1, (Polishing the flat portion) Angle rotation / 90 degrees are manually set in the control means 13.
前記のように準備事項の設定が完了したら、クランプ手段5の把持部6A、6Bの間の基台4上に被研磨加工物(W)の陵角部または平面部のいずれか一面が水平上向きとなるように載置した後に制御手段13の研磨開始スイッチを「ON」して研磨加工を開始させれば、クランプ手段5のクランプ軸12A、12Bが前進して把持部6A、6Bが被研磨加工物Wの両端面を挟持した状態で前記基台4が下降した後、回転手段14A、14Bが前記被研磨加工物Wを105min−1の速度で連続回転させて4陵角部を同時に研磨加工が行われる。陵角部の研磨が終了した後に、前記回転手段14A、14Bが被研磨加工物(W)を90度回転させて、1平面部毎に上向きとなるように設定して順次研磨加工して前記実施例1と同様に3個のシリコンブロックを研磨加工した。   When the setting of the preparation items is completed as described above, either one of the corner portion or the flat portion of the workpiece (W) is horizontally upward on the base 4 between the gripping portions 6A and 6B of the clamp means 5. If the polishing start switch of the control means 13 is turned “ON” and the polishing process is started, the clamp shafts 12A and 12B of the clamp means 5 advance and the gripping portions 6A and 6B are polished. After the base 4 is lowered with both end faces of the workpiece W sandwiched, the rotating means 14A and 14B rotate the workpiece W continuously at a speed of 105 min-1 to simultaneously polish the four corners. Processing is performed. After the corner portion has been polished, the rotating means 14A and 14B rotate the workpiece (W) by 90 degrees to set the surface to face upward for each plane portion, and sequentially polish the workpiece. In the same manner as in Example 1, three silicon blocks were polished.
その結果、被研磨加工物Wのセット時間も含めた1個のシリコンブロックの研磨加工に要した研磨時間が27分46〜27分57秒(平均:27分51秒)、1面の研磨量(=深さ)が各陵角部121μm〜134μm(平均:127μm)、各平面部102μm〜110μm(平均:106μm)、マイクロクラックの最大深さが0.9μm、表面粗さが陵角部Ry0.5〜0.8(平均:Ry0.7)、平面部Ry0.7〜1.0(平均:Ry0.9)、であって、マイクロクラックおよび凹凸の除去と表面粗さを微小化することができ、そのシリコンブロックを3個ともワイヤソーでスライス加工してシリコンウエハにしその割れ・欠け等による不良品の発生率を調べた結果、その発生率を1.8%低減することができた。   As a result, the polishing time required for polishing one silicon block including the set time of the workpiece W is 27 minutes 46 to 27 minutes 57 seconds (average: 27 minutes 51 seconds), and the amount of polishing on one surface (= Depth) is each corner portion 121 μm to 134 μm (average: 127 μm), each plane portion 102 μm to 110 μm (average: 106 μm), the maximum depth of the microcracks is 0.9 μm, and the surface roughness is the corner portion Ry0 .5 to 0.8 (average: Ry 0.7), flat surface portion Ry 0.7 to 1.0 (average: Ry 0.9), and removal of microcracks and irregularities and miniaturization of surface roughness As a result of slicing all three silicon blocks with a wire saw to form a silicon wafer and examining the occurrence rate of defective products due to cracks, chips, etc., the occurrence rate was reduced by 1.8%.
また、「図7の斜線部に示す陵角部と平面部との接合箇所」に存在したマイクロクラックの深さは、前記実施例1においては1.6μm(最大深さ)であったのに対し、本実施例においては0.8μmに減少させることができた。これは、回転手段14A、14Bにより前記被研磨加工物(W)を連続回転させて4陵角部を同時に研磨加工したことによって図7の斜線部に示す箇所が研磨されて除去されたことによるものである。   Moreover, although the depth of the microcrack which existed in the "joint location of the corner | angular part shown in the oblique line part of FIG. 7 and a plane part" was 1.6 micrometers (maximum depth) in the said Example 1. On the other hand, in this example, it could be reduced to 0.8 μm. This is because the part shown by the hatched portion in FIG. 7 is polished and removed by continuously rotating the workpiece (W) by the rotating means 14A and 14B and simultaneously polishing the four corners. Is.
その他の実施例
研磨具10を使用せず、砥粒を含有したナイロン等の合成樹脂から成る毛材を、研磨手段2の底部に植設してもよい。前記毛材の植設はリング状、即ち研磨手段2底部の外周に沿うように、または略平行となるように行ってもよい。
Other Embodiments The bristle material made of synthetic resin such as nylon containing abrasive grains may be planted at the bottom of the polishing means 2 without using the polishing tool 10. The bristle material may be planted in a ring shape, that is, along the outer periphery of the bottom of the polishing means 2 or substantially parallel.
例えば、セラミックス等の研磨加工や、加工の際に略90°の角度を成す柱状体の角部に研磨手段2が接触する場合など、研磨具2と被研磨加工物Wの接触によって欠け(チッピング)が生じることが問題となる場合には、砥粒を含有した合成樹脂から成る繊維状の弾性体を互いに絡ませ、これを研磨手段の底部に植設してもよい。この場合、該弾性体同士が絡み合い、また被加工物に接触した際に折れない程度の弾力を保持するよう、合成樹脂の種類および砥粒の含有率を適宜選択する。   For example, when the polishing means 2 comes into contact with a corner of a columnar body that forms an angle of about 90 ° during processing, such as ceramics, chipping (chipping) occurs due to contact between the polishing tool 2 and the workpiece W to be polished. ) May be a problem, a fibrous elastic body made of a synthetic resin containing abrasive grains may be entangled with each other and implanted at the bottom of the polishing means. In this case, the type of the synthetic resin and the content of the abrasive grains are appropriately selected so that the elastic bodies are entangled with each other, and the elasticity is such that it does not break when it comes into contact with the workpiece.
「粗」→「細」のような多段加工を必要とせず、1段階の加工で要求される表面が得られる場合(例えば、被研磨加工物Wの表面のマイクロクラックが微小で、表面粗さが要求値に対して大差がない場合は「細」のみで加工)には、連接された2以上の研磨手段2に植設された毛材(または弾性体)に含有される砥粒の粒度は、いずれの研磨手段も略同一としてもよい。   When the surface required by one-step processing is obtained without requiring multi-step processing such as “rough” → “fine” (for example, the surface of the workpiece W is micro-cracked and the surface roughness is small) If there is no significant difference from the required value, the processing is performed only with “fine”), and the particle size of the abrasive grains contained in the hair material (or elastic body) implanted in the two or more connected polishing means 2 Any polishing means may be substantially the same.
例えば、上面およびそれに隣接する陵角部といった、異なる面を同時に加工できるように、複数の研磨手段2を設置してもよい。また、その場合においてもそれぞれの面を加工するために設置された研磨手段2に対し、複数の研磨手段2を連接してもよい。   For example, a plurality of polishing means 2 may be installed so that different surfaces such as the upper surface and the corner portion adjacent thereto can be processed simultaneously. Also in this case, a plurality of polishing means 2 may be connected to the polishing means 2 installed for processing each surface.
以上のように、本実施例はシリコンブロックの研削方法に則って説明したが、本発明はシリコンブロックに限定されるものではなく、例えばセラミックス等、硬脆材料全般について好適に用いることができる。   As described above, the present embodiment has been described in accordance with the grinding method of the silicon block. However, the present invention is not limited to the silicon block, and can be suitably used for all hard and brittle materials such as ceramics.
1 研磨ユニット
2 研磨手段
3 高さ位置検出手段
4 基台
5 クランプ手段
6A 把持部(基準位置側)
6B 把持部(従動側)
7 受け部材
8 切欠きV
9 切欠きL
10 研磨具
11 回転盤
12A クランプ軸(基準位置側)
12B クランプ軸(従動側)
13 制御手段
14A 回転手段(基準位置側)
14B 回転手段(従動側)
W 被研磨加工物
P 加工面
DESCRIPTION OF SYMBOLS 1 Polishing unit 2 Polishing means 3 Height position detection means 4 Base 5 Clamping means 6A Grasping part (reference position side)
6B Grip part (driven side)
7 Receiving member 8 Notch V
9 Notch L
10 Polishing tool 11 Turntable 12A Clamp shaft (reference position side)
12B Clamp shaft (driven side)
13 Control means 14A Rotation means (reference position side)
14B Rotating means (driven side)
W Workpiece P Work surface

Claims (17)

  1. 被研磨加工物の形状が多角柱状の各平面部および各陵角部を研磨する研磨装置であって、該被研磨加工物(W)の各平面部のうち1平面部または各陵角部のうち1陵角部のいずれかを研磨する加工面として水平上向きとなるように載置できるようにした基台と、前記被研磨加工物を研磨加工する時にその両端面を挟持し、研磨終了後に前記挟持状態を解除する把持部を先端に取付けて前後動するようにしたクランプ軸からなるクランプ手段と、前記被研磨加工物を研磨加工する時に、前記加工面に研磨手段の先端が接触回転しながら研磨加工する研磨手段を移送する研磨ユニットと、前記被研磨加工物の加工面の高さ位置を研磨加工前に検出し該高さ位置の検出信号を制御手段に記憶させる高さ位置検出手段と、を備え、前記制御手段が前記高さ位置検出信号により研磨手段の先端の切込み量を演算処理して研磨加工を行うようにしたことを特徴とする多角柱状部材の研磨装置。    A polishing apparatus for polishing each planar portion and each corner portion having a polygonal columnar shape to be polished, wherein one planar portion or each corner portion of each planar portion of the workpiece (W) is polished. A base that can be placed horizontally upward as a processing surface for polishing one of the corners, and sandwiching both end surfaces when polishing the workpiece, and after polishing is completed A clamp means comprising a clamp shaft attached to the tip for releasing the clamping state and moved back and forth, and when the workpiece is polished, the tip of the polishing means rotates in contact with the processing surface. A polishing unit for transferring a polishing means for polishing processing, and a height position detecting means for detecting a height position of a processed surface of the workpiece to be polished before polishing and storing a detection signal of the height position in a control means And the control means includes the The polishing apparatus of polygonal shaped member, characterized in that the depth of cut of the tip of the polishing means to perform polishing by arithmetic processing by the position detection signal is.
  2. 前記把持部に両端面が挟持された被研磨加工物を前記クランプ軸の軸心を中心に所定の回転角度が設定されて被研磨加工物の加工面が上向きとなるように回転するタクト回転、または回転速度が設定されて回転する連続回転のどちらかに選択して回転するようにした回転手段と、前記基台を昇降させる昇降手段と、を備え、研磨加工前に研磨加工する被研磨加工物の多角柱形状の角数と、該被研磨加工物の前記陵角部の研磨加工条件である前記回転手段によるタクト回転、または連続回転の選択したどちらかと、を前記制御手段に設定するようにしたことを特徴とする請求項1記載の多角柱状部材の研磨装置。  A tact rotation in which a workpiece to be polished, whose both end faces are sandwiched between the gripping portions, is rotated so that a predetermined rotation angle is set around the axis of the clamp shaft and the workpiece surface of the workpiece is turned upward; Alternatively, a rotating process that is selected and selected from one of continuous rotations that rotate with a rotation speed set, and an elevating unit that raises and lowers the base, and is subjected to polishing before polishing. The number of corners of the polygonal column shape of the object and either the tact rotation by the rotation means or the continuous rotation selected as the polishing processing condition of the corner portion of the workpiece to be polished are set in the control means. The apparatus for polishing a polygonal columnar member according to claim 1, wherein
  3. 前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した毛材が該研磨ブラシの底部にリング状に複数本植設された構造を有することを特徴とする請求項1または請求項2記載の多角柱状部材の研磨装置。  2. The polishing brush according to claim 1, wherein the polishing means is a polishing brush, and the polishing brush has a structure in which a plurality of bristle materials containing abrasive grains are planted in a ring shape at the bottom of the polishing brush. The apparatus for polishing a polygonal columnar member according to claim 2.
  4. 前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した毛材を複数本束ねた研磨具の基部が回転盤に複数本植設された構造を有することを特徴とする請求項1または請求項2記載の多角柱状部材の研磨装置。  The polishing means is a polishing brush, and the polishing brush has a structure in which a plurality of base parts of a polishing tool in which a plurality of bristle materials containing abrasive grains are bundled are planted on a rotating disk. The polishing apparatus for a polygonal columnar member according to claim 1 or 2.
  5. 前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有し互いが絡み合った繊維状の弾性体が該研磨ブラシの底部に複数本植設された構造を有することを特徴とする請求項1または請求項2記載の多角柱状部材の研磨装置。  The polishing means is a polishing brush, and the polishing brush has a structure in which a plurality of fibrous elastic bodies containing abrasive grains and entangled with each other are planted at the bottom of the polishing brush. The polishing apparatus for a polygonal columnar member according to claim 1 or 2.
  6. 前記研磨手段を複数台水平に連接したことを特徴とする請求項3または請求項4のいずれか記載の多角柱状部材の研磨装置。The polishing apparatus of polygonal shaped member according to claim 3 or claim 4, characterized in that by concatenating the polishing means to a plurality horizontally.
  7. 前記研磨手段を、前記多角柱状部材の少なくとも2以上の異なる面に配置したことを特徴とする請求項3乃至請求項5のいずれか記載の多角柱状部材の研磨装置。  The polishing apparatus for a polygonal columnar member according to any one of claims 3 to 5, wherein the polishing means is disposed on at least two different surfaces of the polygonal columnar member.
  8. 前記研磨手段を前記多角柱状部材の少なくとも2以上の異なる面に、それぞれ複数台水平に配置したことを特徴とする請求項3または請求項4のいずれか記載の多角柱状部材の研磨装置。Wherein the polishing means into at least two different surfaces of the polygonal prism member, each polishing apparatus polygonal shaped member according to claim 3 or claim 4, characterized in that arranged in multiple horizontal.
  9. 前記毛材に混合される砥粒の粒度がF180〜#2000(JIS R6001:1998)であって、その粒度が異なる研磨手段を2種類以上選択し、該研磨手段を、その粒度が「粗」から「細」の順に研磨加工するように連設したことを特徴とする請求項6または請求項8記載の多角柱状部材の研磨装置。  The abrasive grains mixed with the bristle material are F180 to # 2000 (JIS R6001: 1998), and two or more types of polishing means having different particle sizes are selected. 9. The polishing apparatus for a polygonal columnar member according to claim 6 or 8, wherein the polishing apparatus is continuously arranged so as to perform polishing in the order of “thin” to “thin”.
  10. 前記毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が略同一の研磨手段を選択し、該研磨手段を連接したことを特徴とする請求項6または請求項8記載の多角柱状部材の研磨装置。  9. The abrasive grains mixed in the bristle material are F180 to # 2000, a polishing means having substantially the same particle size is selected, and the polishing means are connected to each other. The polygonal columnar member polishing apparatus described.
  11. 前記基台に被研磨加工物を載置する受け部材に、前記被研磨加工物のいずれか1陵角部を研磨するときに、該1陵角部を水平上向きに載置できるようにその下側となる平面部が接する切欠きVと、該切欠きVに、前記被研磨加工物の各平面部のいずれか1平面部を研磨するときに、該1平面部を上向きに載置できるようにその下側となる陵角部が係止できる切欠きLと、を形成したことを特徴とする請求項1乃至請求項10のいずれか記載の多角柱状部材の研磨装置。  When any one corner portion of the workpiece is polished on the receiving member for placing the workpiece on the base, the bottom portion can be placed horizontally upward so that the corner portion can be placed horizontally upward. A notch V that is in contact with the flat portion on the side, and the notch V so that when one flat portion of each flat portion of the workpiece is polished, the one flat portion can be placed upward. The polishing apparatus for a polygonal columnar member according to any one of claims 1 to 10, characterized in that a notch L that can be engaged with a lower corner portion is formed on the bottom.
  12. 前記請求項1乃至11のいずれか記載の多角柱状部材の研磨装置により、被加工物の表層より100μm以下に存在するマイクロクラックが除去され、かつ研磨加工面の表面粗さRy(JIS B0601:1994)が3μm以下とされたことを特徴とする多角柱状部材。  The polishing apparatus for a polygonal columnar member according to any one of claims 1 to 11 removes microcracks present at 100 μm or less from the surface layer of the workpiece, and surface roughness Ry (JIS B0601: 1994) of the polished surface. ) Is 3 μm or less.
  13. 前記多角柱部材はシリコンブロックまたはセラミックスであることを特徴とする請求項12記載の多角柱状部材。The polygonal columnar member according to claim 12, wherein the polygonal column member is a silicon block or a ceramic.
  14. 前記請求項1に記載の多角柱状部材の研磨装置によって、各陵角部の研磨を終了させた後に各平面部の研磨加工を行なうことですべての加工面を研磨加工する多角柱状部材の研磨方法であって、
    前記研磨方法は、基台に載置されている被研磨加工物の複数ある加工面のうち加工中の加工面の研磨が終了した時点で前記クランプ手段のクランプ軸が後退して把持部の挟持状態が解除された前記被研磨加工物の次の加工面を水平上向きとなるように作業者が手動で反転したのち、前記クランプ手段のクランプ軸が前進して一方の把持部が被研磨加工物の基準端面位置に到達して停止し他方のクランプ軸がさらに前進してその把持部が被研磨加工物の他方の端面を押圧して挟持し、次の加工面を研磨加工するようにしたことを特徴とする多角柱状部材の研磨方法。
    The method for polishing a polygonal columnar member, wherein all the processing surfaces are polished by polishing each planar portion after the polishing of each corner portion is finished by the polygonal columnar member polishing apparatus according to claim 1. Because
    In the polishing method, the clamp shaft of the clamp means is retracted and the gripping portion is clamped when polishing of the processing surface being processed among a plurality of processing surfaces of the workpiece to be polished placed on the base is completed. After the operator manually reverses the next processing surface of the workpiece to be polished that has been released from the state, the clamp shaft of the clamping means moves forward so that one gripping portion is the workpiece to be polished. The other end surface of the workpiece is pressed and sandwiched, and the next processing surface is polished. A polishing method for a polygonal columnar member characterized by the following.
  15. 前記請求項2に記載の多角柱状部材の研磨装置において、基台に載置されている被研磨加工物の両端面をクランプ手段の把持部により挟持した状態で前記基台を下降させて被研磨加工物より離間させておき、被研磨加工物の各陵角部の研磨を、所定の回転角度が設定された前記回転手段を回転させて1陵角部毎に研磨面が上向きとなるように位置決めして研磨するようにしたタクト研磨、または回転速度が設定された前記回転手段を連続回転させて各陵角部を同時に研磨するようにした連続研磨のどちらかの方法によりすべての陵角部の研磨加工を終了させたのち、所定の回転角度が設定された前記回転手段を回転させて1平面部毎に研磨加工してすべての平面部の研磨加工を行うようにしたことを特徴とする多角柱状部材の研磨方法。  3. The polishing apparatus for a polygonal columnar member according to claim 2, wherein the base is lowered while both end faces of the workpiece to be polished placed on the base are held by the gripping portions of the clamping means. Each of the corners of the workpiece to be polished is polished away from the workpiece, and the rotating means having a predetermined rotation angle is rotated so that the polishing surface faces upward for each corner. All the corners are either tact grinding, which is positioned and polished, or continuous grinding, in which each rotating corner is polished at the same time by continuously rotating the rotating means set at the rotation speed. After the polishing process is finished, the rotating means having a predetermined rotation angle is rotated so that the polishing process is performed for each plane part to perform the polishing process for all the plane parts. A method for polishing a polygonal columnar member.
  16. 前記請求項6または請求項8に記載の多角柱状部材の研磨装置において、前記毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が異なる研磨手段を2種類以上選択し、該研磨手段をその粒度が「粗」から「細」の順に研磨加工するように連設して研磨することを特徴とする多角柱状部材の研磨方法。  The polygonal columnar member polishing apparatus according to claim 6 or 8, wherein the abrasive grains mixed in the bristle material have a particle size of F180 to # 2000, and two or more types of polishing means having different particle sizes are selected. A polishing method for a polygonal columnar member, characterized in that the polishing means is connected and polished so that the particle size is polished in the order of “rough” to “fine”.
  17. 前記請求項6または請求項8に記載の多角柱状部材の研磨装置において、前記毛材に混合される砥粒の粒度がF180〜#2000であって、その粒度が略同一の研磨手段を選択し、該研磨手段を連接して研磨することを特徴とする多角柱状部材の研磨方法。  9. The polishing apparatus for a polygonal columnar member according to claim 6 or 8, wherein the abrasive grains mixed in the bristle material are F180 to # 2000, and the polishing means having the same grain size is selected. A polishing method for a polygonal columnar member, characterized by connecting and polishing the polishing means.
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