JP4815976B2 - Method for manufacturing crystal vibrating device - Google Patents

Description

The present invention relates to a method for manufacturing a high-frequency crystal oscillating device used in electronic equipment.

  A thickness vibration type crystal resonator using an AT-cut crystal resonator element generally has a configuration in which a pair of excitation electrodes are formed on the front and back surfaces of a crystal resonator element so as to face each other and an AC voltage is applied to the excitation electrodes. Various characteristics of such a crystal resonator depend on the quality and shape of the crystal resonator element (crystal resonator plate) itself, and also depend on the configuration of the excitation electrode and the extraction electrode, the connection configuration to the package, and the like. In particular, when a crystal resonator element is mounted on a package, a conductive bonding material is used, but the characteristics of the crystal resonator may become unstable due to the influence of the conductive bonding material.

  For example, in a surface-mount type crystal resonator using a ceramic package, a crystal resonator element in which a paste-like conductive bonding material is applied to an electrode pad of a package and a pair of front and back excitation electrodes are formed on the conductive bonding material Is installed. An extraction electrode is extracted from the excitation electrode to the end face of the quartz crystal vibration element, and the extraction electrode portion is electromechanically bonded by the conductive bonding material.

By the way, the extraction electrode formed on the crystal resonator element is difficult to be formed on the side surface of the crystal resonator element depending on the electrode film forming method, and the wraparound electrode cannot be formed on the opposite main surface. For example, when film formation is performed by a vacuum evaporation method, an electrode may not be formed on an intended side surface depending on an evaporation angle with respect to an evaporation source of the crystal resonator element.

Japanese Patent Application Laid-Open No. 2000-36716 (Patent Document 1) discloses such a problem, and a piezoelectric vibration element joining method for solving such a problem is provided in a recess of a package. In the manufacturing process of a piezoelectric device having a structure in which the concave portion is hermetically sealed in a state where the piezoelectric vibration elements having excitation electrodes are housed on both the front and back surfaces, the conductive material is conductive on two electrode pads formed on the step in the concave portion. When bonding the piezoelectric vibration element via the adhesive, the front and back surfaces and the end surface of the element plate from the edge side of the piezoelectric element plate to the lead electrode previously derived from the respective excitation electrodes on the front and back surfaces at one end edge of the piezoelectric vibration element And applying the conductive adhesive and mounting the piezoelectric vibration element that has been applied with the conductive adhesive in the above-described step on each of the pads so that the respective conductive adhesives correspond to each other. Degree bonding method consisting of capital is disclosed. A similar joining method is also disclosed in Japanese Patent No. 2583866 (Patent Document 2).

Moreover, in order to solve the above-mentioned problem, the structure which apply | coats an electrically conductive joining material to upper and lower sides is considered. For example, in Japanese Patent No. 3375445 (Patent Document 3), in a method for supporting a quartz crystal vibrating piece that supports a quartz crystal vibrating piece with a holding part, a step of applying a first adhesive to the holding part; A temporary curing step of evaporating the solvent of the applied first adhesive to make the first adhesive in a semi-cured state or more, and applying a second adhesive on the first adhesive A step of placing the crystal vibrating piece on the holding portion such that an end of the crystal vibrating piece comes into contact with the first adhesive and the second adhesive; and Applying an additional second adhesive to the end surface of the quartz crystal vibrating piece to fix the end, and solidifying the first and second adhesives at a curing temperature, When the first and second adhesives are cured and contracted, the crystal piece rises and the first contact Method of supporting the quartz crystal resonator element, characterized in that blocked by agents. Is disclosed.

By the way, in recent years, stability of DLD (Drive Level Dependance) characteristics has been demanded for crystal resonators. This is due to an increase in the opportunity to drive the crystal resonator at an extremely low voltage accompanying the low-voltage driving of the electronic equipment. The DLD characteristic is that the driving power applied to the crystal resonator is, for example, 0.001 μW to 300 μW. This shows the frequency characteristics when this is repeated and repeated. A crystal resonator with poor DLD characteristics has a problem that the frequency characteristics with respect to driving power fluctuations are not stable, such as the frequency fluctuation width becomes large, the frequency characteristics fluctuate, or the crystal oscillator stops oscillation in some cases. Have.

There are various factors that cause the deterioration of the DLD characteristics. One of them is the influence of the stress in the conductive bonding material for bonding the crystal resonator element and the package, and the package itself. The effect of distortion is also considered. As shown in Patent Document 3, it is preferable that the bonding material for connecting the crystal resonator elements has a multi-stage structure, which has an effect of reducing the influence of package distortion, but has the following drawbacks. One is to paste a crystal resonator element and a package using a paste-like conductive bonding material, and the stress remains in the conductive bonding material even after the conductive bonding material is cured and bonded. As a result, the characteristics of the crystal vibrating device may be changed. Further, even in the multi-stage bonding as disclosed in Patent Document 3, stress is inherent in each conductive bonding material, and these may be intertwined in a complicated manner to change the characteristics of the quartz crystal vibration device.

JP 2000-36716 A Japanese Patent No. 2583866 Japanese Patent No. 3375445

  The present invention has been made in view of the above points, and an object of the present invention is to provide a quartz resonator device having improved electrical characteristics such as DLD characteristics and high operational reliability. Is.

In order to achieve the above object, the present inventor has intensively studied the mounting configuration of the crystal resonator element on the package, and as a result, manufactured a crystal resonator device having stable electrical characteristics such as DLD characteristics as follows. It is realized by the method .

That is, as shown in claim 1, an electrode film forming step in which the excitation electrode and the extraction electrode are formed by thin film forming means using a patterning mask in a plurality of crystal resonator elements,
After the electrode film forming step, a step of forming a conductive solid by applying a conductive bonding material to each extraction electrode in a state accommodated in the patterning mask and curing the conductive bonding material;
Applying a paste-like conductive bonding material to the electrode pads of the package;
Mounting a conductive solid of the crystal resonator element on the paste-like conductive bonding material;
And a step of electrically and mechanically bonding the crystal vibrating element and the package by curing the paste-like conductive bonding material.

According to the above configuration, since the crystal vibrating element in which the conductive solid made of the conductive resin bonding material in which the conductive filler is dispersed in the resin bonding material is bonded by the conductive bonding material, a plurality of configurations excellent in the buffer function It is possible to form the crystal resonator element using the conductive material very easily. In addition, the conductive solid formed on the quartz vibrating element can be in a physically stable state, and in order to bond such a conductive solid with the conductive bonding material, the conductive bonding material is cured as in the past. Since the stress at is not directly transmitted to the crystal resonator element, electrical characteristics such as DLD characteristics can be improved. Furthermore, due to the mass effect of the conductive solid, stable support can be performed without tilting the free end of the crystal resonator element when bonded to the conductive bonding material. Therefore, a crystal vibration device with high reliability and stable characteristics can be obtained.

  In the electrode film forming process, the crystal resonator elements are aligned with the patterning mask. In such a manufacturing method, the alignment state stored in the patterning mask is used after the electrode film is formed, and the lead electrode portion is electrically conductive. A conductive solid is formed by applying and curing a conductive bonding material. Moreover, mounting on a package can be performed based on the alignment state in the conductive solid formation state. Therefore, it is not necessary to align a new crystal resonator element for forming a conductive solid, and it is possible to provide a method for manufacturing a crystal resonator device that is efficient and has excellent productivity.

  Further, as shown in claim 2, the conductive solid may be formed on only one surface or both surfaces or both surfaces and side surfaces of the crystal resonator element. In the formation of only one side, the mounting of the crystal resonator element on the electrode pad is mounted with either the front or back direction, but the conductive solid or conductive bonding material is not formed on the opposite side of the bonding surface, This is effective for reducing the height of quartz vibration devices. In this case, there may be a need for a lead-out electrode configuration in which the lead-out electrode is turned to the opposite main surface via the side surface of the crystal vibrating device.

  When the conductive solid is formed on both sides of the crystal resonator element, it is possible to mount the crystal resonator element without considering the direction of the front and back, because no distinction is made between the front and the back regarding the mounting on the electrode pad of the package. Moreover, when forming a conductive solid on both surfaces and side surfaces, the front and back electrodes can be made conductive without forming the above-described lead-out electrodes, and productivity can be improved.

In addition, the resin used for the conductive solid and the paste conductive bonding material may be the same material. For example, the conductive solid has a paste-like conductive bonding material applied to the extraction electrode of the crystal resonator element and is cured, and this is bonded to the conductive solid using the same conductive bonding material. Thus, the crystal resonator element and the package may be electromechanically joined. In such a configuration, since both are made of the same material, the “familiarity” at the bonding interface becomes good and the bonding property can be improved.

Conversely, as shown in claim 4, the resin used for the conductive solid and the paste-like conductive bonding material may be a different material. For example, a conductive solid needs to be integrated with a crystal resonator element or an electrode pad formed on the surface thereof. By using a conductive solid that adopts a material that is “friendly” to these crystal resonator elements or electrode pads, The bondability between the two can be improved. Further, by selecting a conductive bonding material having a good bonding property between the electrode pad and the conductive solid, it contributes to the improvement and stability of the characteristics of the quartz crystal vibration device as a whole.

Furthermore, as shown in claim 5, the conductive solid may have a higher hardness than the paste-like conductive bonding material after curing. According to such a configuration, even if stress is inherent in the conductive bonding material, the stress is not easily transmitted to the crystal resonator element, and the characteristics can be stabilized.

The present invention also proposes a package configuration suitable for this configuration in which a conductive solid is formed on the extraction electrode of the crystal resonator element and this is bonded to the electrode pad of the package with a conductive bonding material. Yes. That is, as shown in claim 6, a small bank portion is formed in the vicinity of the outer periphery of the electrode pad, or as shown in claim 7, the electrode pad of the package is formed on the bottom surface inside the package. It is proposed that the upper surface of the electrode pad formed in the digging portion is lower than the inner bottom surface of the package.

According to each of the above configurations, it is possible to prevent the conductive bonding material from flowing out from the electrode pads. Therefore, even if a low-viscosity material or a low thixotropic material is selected for the conductive bonding material, the electrode pads are short-circuited. Accidents are less likely to occur.

According to the configuration of claim 7, and according to such a configuration, the conductive bonding material is supplied to the digging portion, so that the low-viscosity material or the low thixotropic material of the conductive bonding material is obtained. Even if selected, the conductive bonding material stays in the dug portion, and mutual short circuit accidents are less likely to occur. In addition, the thickness of the conductive solid is a factor that hinders the reduction in the height of the quartz vibration device, but a support structure in which a part of the conductive solid is accommodated in the digging portion can be adopted. Contributes to lower device height.

Furthermore, the present invention also proposes a configuration that improves the formation strength of a conductive solid when a conductive resin bonding material is used for the conductive solid. According to the eighth aspect of the present invention, the conductive solid is made of a conductive resin bonding material, and the base electrode exposed portion of the crystal vibrating element is formed on the extraction electrode on which the conductive solid is formed, and the conductive solid is also bonded to the base exposed portion. It is a configuration. The conductive resin bonding material is a bonding material having a structure in which a conductive filler such as gold or silver is dispersed in, for example, a resin-based bonding material, and generally has good bonding properties with the base portion of the crystal resonator element. When such a bonding material is used, the bonding strength between the crystal resonator element and the conductive solid can be improved by positively forming, for example, a slit-shaped or hole-shaped substrate exposed portion on the extraction electrode.

  Next, verification data of the product of the present invention and the conventional product will be described. The compared crystal resonator device is a surface-mount crystal resonator (86.450 MHz fundamental wave) in which a crystal resonator element is hermetically housed in a ceramic package, and the basic configuration is the configuration disclosed in the first embodiment described later. The conductive junction configuration of the element was varied. The conductive joint portion of the conventional product has a configuration similar to that of Patent Document 3, in which a crystal vibration element is mounted on a paste-like silicone resin-based conductive bonding material, and further, a paste-form silicone resin-based conductive joint is mounted on the crystal vibration element. It is the structure which apply | coated material and hardened these. The conductive joint portion of the product of the present invention is similar to the configuration disclosed in the first embodiment to be described later, and is a cured product of a silicone resin conductive joint material as a conductive solid on a paste-like silicone resin conductive joint material. This is a configuration in which a quartz vibration element formed with is mounted and a paste-like silicone resin conductive bonding material is cured. The number of samples was 20 for each of the conventional product and the product of the present invention, and each DLD characteristic was measured. The drive level was varied between 0.001 μW and 300 μW (horizontal axis), and the frequency deviation (dF / F ppm) was measured. FIG. 8 shows the DLD characteristics of the conventional product, and FIG. 9 shows the DLD characteristics of the product of the present invention. It can be understood that many conventional products have a large frequency deviation, whereas the present invention as a whole clearly has a small frequency deviation and stable characteristics.

The samples were also examined for aging (aging) characteristics. Specifically, each sample was subjected to an aging test for 1000 hours (horizontal axis) in a high temperature environment of 85 ° C., and the frequency deviation (dF / F ppm) was measured. FIG. 10 shows the aging characteristics of the conventional product, and FIG. 11 shows the aging characteristics of the product of the present invention. As is clear from each figure, the conventional product has a large frequency deviation over time and its variation is large, while the present invention product as a whole has a small frequency deviation and small variation. It can be understood that the characteristics are stable.

  As described above, according to the present invention, a crystal resonator element having a conductive solid formed of a conductive resin bonding material in which a conductive filler is dispersed in a resin bonding material is bonded with a paste-like conductive resin bonding material. Therefore, it is possible to very easily obtain the bonding of the crystal resonator element by the conductors having a plurality of structures excellent in the buffer function. In addition, the crystal resonator element is not easily subjected to stress inherent in the conductive bonding material. Therefore, electrical characteristics such as DLD characteristics and aging characteristics are stable, and a highly reliable crystal resonator device can be obtained.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
A first embodiment of the present invention will be described with reference to FIGS. 1 to 3 by taking a surface-mounted crystal resonator as an example. FIG. 1 is a cross-sectional view showing the first embodiment, FIG. 2 is a plan view before airtight sealing with a lid, and FIG. 3 is a view showing a mounting state of a crystal resonator element. The surface-mount type crystal resonator includes a ceramic package 1 having a concave portion with an open top, a crystal vibration plate 2 that is a crystal vibration element housed in the package, and a lid 3 bonded to the opening of the package. Consists of. In FIG. 1 and FIG. 2, the description of the excitation electrode and the extraction electrode formed on the quartz crystal plate 2 is omitted.

  The ceramic package 1 has a structure in which a ceramic such as alumina and a conductive material are appropriately laminated, and is a structure having a concave shape in cross section and having an electronic element housing portion 10 and a bank portion 11 formed around the electronic device housing portion 10. The upper surface of the bank portion 11 around the electronic element housing portion is flat, and a circumferential first metal film layer 11a is formed on the bank portion. The upper surface of the first metal film layer 11a is also formed to be flat, and the metal film layers are configured in the order of tungsten, nickel, and gold. Tungsten is integrally formed during ceramic firing by metallization technology, and nickel and gold layers are formed by plating technology.

  Castellations C1, C2, C3, C4 extending in the vertical direction are formed at the four corners of the outer periphery of the ceramic package. The castellation has a configuration in which arc-shaped cutouts are formed in the vertical direction, and is necessary when the wafer is cut into pieces as described above.

  The first metal film layer 11a is externally formed on the lower surface (back surface) of the ceramic package by a via hole (not shown) formed in the ceramic package or a conductive film (not shown) formed in the castellation portion. It is electrically connected to a connection electrode (not shown) and finally connected to ground.

  Electrode pads 12 and 13 are formed on the inner bottom surface of the ceramic package 1, and these electrode pads are respectively connected to external connection electrodes 14 and 15 formed on the bottom surface outside the package via connection electrodes (not shown). It is pulled out as an input / output terminal.

  Between the electrode pads 12 and 13, a crystal vibrating plate 2 having a rectangular shape in plan view, which is a crystal vibrating element, is mounted. The crystal diaphragm 2 is, for example, an AT-cut crystal diaphragm driven by thickness-shear vibration. Excitation electrodes 21 and 22 (22 are not shown) having a rectangular shape in plan view are formed on the front and back surfaces thereof. The lead electrodes 211 and 221 (221 not shown) are led out from the respective excitation electrodes 21 and 22 to one short side.

  Conductive solids S1 and S1 are formed on the short-side edge portions of the extraction electrodes 211 and 221 over the front and back main surfaces and side surfaces. In such a configuration, the front and back electrodes can be conducted without forming a lead electrode to the opposite main surface to the lead electrode, and productivity can be improved. In the present embodiment, a configuration in which a silicone resin conductive bonding material is cured on the conductive solids S1 and S1 is used. The silicone resin conductive bonding material has a structure in which a conductive filler such as gold or silver is dispersed in a paste-like silicone resin bonding material, and has a cushioning function by elasticity and good conductivity even after curing. A solid can be obtained.

  The crystal diaphragm in which the conductive solids S1 and S1 are integrally formed is conductively bonded to the electrode pads 12 and 13 of the ceramic package 1. Conductive bonding is performed using the conductive bonding materials S2 and S2, and in this embodiment, the same silicone resin conductive bonding material as that used for the conductive solid is used. Note that, due to the mass effect of the conductive solids S1 and S1, stable support can be performed without tilting the free end portion of the crystal diaphragm 2 when bonded to the conductive bonding materials S2 and S2.

  The lid 3 for hermetically sealing the ceramic package has a flat plate configuration having a rectangular shape in plan view. Although not shown, the lid 3 has a configuration in which a metal brazing material is formed as a second metal film layer 32 on a core material made of kovar. More specifically, for example, a nickel layer, kovar core material, copper In this order, the silver brazing layer, which is the second metal film layer, is joined to the first metal film layer of the ceramic package. Note that the outer shape of the lid in plan view is substantially the same as the outer shape of the ceramic package.

  The crystal diaphragm 2 in which the conductive solid is integrated is stored in the electronic element housing portion 10 of the ceramic package 1, and the electrode pads 12, 13 and the conductive solids S1, S1 are conductively bonded by the conductive resin bonding materials S2, S2. Thereafter, a necessary bonding material curing process is performed, and hermetic sealing is performed in a vacuum atmosphere. In the present embodiment, the above-mentioned silver brazing layer is melt-cured using a seam welding method and hermetically sealed.

  In addition, the conductive solid S1 formed on the quartz diaphragm 2 is not limited to the above-described configuration. For example, a conductive bonding material is formed on the lower surface side of the quartz diaphragm as shown in FIG. A cured configuration may be used, or a configuration in which a conductive bonding material is formed on the upper and lower surfaces of the crystal diaphragm and cured as shown in FIG. Further, as shown in FIG. 4C, a thick metal film layer may be formed on the lower surface side of the quartz crystal vibration plate. Note that the metal thick film layer may adopt a configuration in which a plurality of films are stacked by screen printing.

In the formation of only one side shown in FIG. 4 (a), the mounting of the crystal diaphragm on the electrode pad is mounted with either the front or back direction, but the conductive solid or the conductive bonding material is in contact with the bonding surface. Since it is not formed on the opposite surface, it is effective in reducing the height of the crystal unit. In this case, depending on the electrode configuration, there may be a need for a lead-out electrode configuration in which the lead-out electrode is turned to the opposite main surface via the side surface of the crystal resonator.

When the conductive solid shown in FIG. 4B is formed on both sides of the crystal diaphragm, the crystal diaphragm is not mounted in consideration of the direction of the front and back because there is no distinction between the front and back of the package on the electrode pad. It can be carried out.

Next, a method for manufacturing a crystal resonator according to this embodiment will be described. As a manufacturing process of the crystal resonator, a plurality of crystal diaphragms 2 are arranged and stored in a patterning mask, and the crystal diaphragm 2 stored in the patterning mask is physically processed by a vacuum deposition method, a sputtering method, or the like. Of forming the excitation electrodes 21 and 22 and the extraction electrodes 211 and 221 patterned on the surface of the crystal diaphragm by a typical film forming method, and the paste-like conductivity at the extraction electrode forming position of the crystal diaphragm 2 housed in the patterning mask Applying the conductive bonding material, curing the applied conductive bonding material to form the conductive solids S1 and S1, and forming the conductive bonding materials S2 and S2 on the electrode pads 12 and 13 of the ceramic package 1. A step of mounting the crystal diaphragm 2 on the ceramic package 1 so that the conductive solid is mounted on the conductive bonding material; And curing the bonding material S2, S2, and a step of hermetically sealing the opening of the ceramic package 1 at the lid 3. Note that the conductive solid does not have to be formed in the state of being accommodated in the patterning mask, and the conductive solid may be formed using another jig or coating device.

In carrying out the above manufacturing method, for example, a conductive bonding material on a patterning mask as shown in FIG. 5 may be applied. FIG. 5 shows a patterning mask M in which quartz crystal plates 2 (quartz crystal elements) on which excitation electrodes and extraction electrodes are formed are arranged in a matrix. Usually, the patterning mask is composed of a plurality of components. Although not shown in detail, a spacer for accommodating the crystal diaphragm and an opening window corresponding to the excitation electrode and the extraction electrode are formed above and below the spacer, respectively. The upper mask and the lower mask, or a pressing plate for fixing the upper mask and the lower mask. A conductive bonding material is applied with a dispenser or the like to the extraction electrode portion of each crystal vibrating plate 2 in a state of being accommodated in such a patterning mask M, and the conductive bonding material is heat-cured in a drying furnace or the like, so that many The quartz crystal plate 2 on which the conductive solids S1 and S1 are formed can be obtained. Such a crystal diaphragm is taken out of the patterning mask by a transfer device having a chucking function and a suction function and mounted on a package. Immediately before mounting the crystal diaphragm on the package, a conductive bonding material is applied to the electrode pad with a dispenser or the like, and the crystal diaphragm 2 sucked by the suction tool T of the transfer device as shown in FIG. The conductive solid S1 is mounted on a paste-like conductive bonding material formed on the electrode pads 12 and 13. With the manufacturing method in which the conductive bonding material is applied to the quartz crystal plate 2 in the state where the patterned mask is arranged in this manner and the conductive solid is formed, the conductive solid can be extremely efficiently formed on the extraction electrode portion. . Moreover, mounting on a package can be performed based on the alignment state in the conductive solid formation state. As described above, it is not necessary to arrange a new crystal resonator element for forming a conductive solid, and it is possible to provide a method for manufacturing a crystal resonator that is efficient and has excellent productivity. In this example, a silicone resin conductive bonding material is used together with a conductive solid and a conductive bonding material.

Conventionally, a conductive bonding material (first adhesive) is applied on the electrode pad, cured, and then a conductive bonding material (second adhesive) is further applied on the cured conductive bonding material. Further, a configuration in which a crystal resonator element is mounted is also conceivable. In this case, it is possible to stabilize the DLD characteristics, but there is a problem in terms of manufacturing. That is, in the actual manufacture of the crystal resonator, the supply of the adhesive to the electrode pad of the package on which the crystal resonator element is mounted is performed by bringing the dispenser close to the electrode pad in a positioned state. Here, the supply of the second adhesive is supplied onto the cured first adhesive, but the shape of the cured first adhesive varies depending on the supply amount variation of the adhesive. In such a case, the dispenser may come into contact with the cured first adhesive and damage the adhesive. In addition, it is difficult to supply the cured adhesive with high positioning accuracy, which causes manufacturing variations. According to the present invention, such a problem does not occur.

  A second embodiment of the present invention will be described with reference to the sectional view of FIG. In the present embodiment, the mounting performance of the crystal diaphragm according to the present invention is improved by devising the package. The basic configuration is similar to that of the first embodiment, but the configuration of the electrode pads is different. The surface-mount type crystal resonator includes a ceramic package 4 having a recess with an upper opening, a rectangular crystal vibration plate 5 that is a piezoelectric vibration plate housed in the package, and a lid 6 that is bonded to the opening of the package. It consists of.

  The ceramic package 4 has a configuration in which a ceramic such as alumina and a conductive material are laminated, and has a concave shape when viewed in cross section, and has an electronic element housing portion 40. The upper surface of the bank portion 41 around the electronic element housing portion is flat, and a circumferential first metal film layer 41a is formed on the entire surface of the bank portion. The upper surface of the first metal film layer 41a is also formed to be flat and has a layer structure of tungsten, nickel, and gold. Tungsten is integrally formed during ceramic firing by metallization technology, and nickel and gold layers are formed by plating technology.

  The first metal film layer 41a is externally formed on the lower surface (back surface) of the ceramic package by a via hole (not shown) formed in the ceramic package or a conductive film (not shown) formed in the castellation portion. It is electrically connected to a connection electrode 46 (not shown) and finally connected to ground.

  Electrode pads 42 and 43 (43 are not shown) are formed on the inner bottom surface 40a of the electronic element housing portion 40 of the ceramic package 4, and these electrode pads are connected to the outside of the package via connecting electrodes (not shown). Are respectively connected to the external connection electrodes 44 and 45 formed on the bottom surface as input / output terminals. A digging portion 40b is formed at the electrode pad forming position of the bottom surface 40a, and the electrode pads 42 and 43 are formed in the digging portion 40b, and the upper surface of the electrode pad is positioned lower than the bottom surface 40a. It has a configuration. Since these digging portions are formed for each of the electrode pads 42 and 43, two independent digging portions are formed on the bottom surface 40a.

  Between the electrode pads 42 and 43, a crystal vibrating plate 5 having a rectangular shape in plan view, which is a crystal vibrating element, is mounted. The quartz diaphragm 5 is, for example, an AT-cut quartz diaphragm that is driven by thickness shear vibration. Excitation electrodes (not shown) having a rectangular shape in plan view are formed on the front and back surfaces of the quartz diaphragm 5 so as to face each other. Lead electrodes (not shown) are led out from one side to the other on one short side.

  Conductive solids S1 and S1 are formed over the front and back main surfaces and side surfaces at the edge portion on the short side of the extraction electrode. In such a configuration, the front and back electrodes can be conducted without forming a lead electrode to the opposite main surface to the lead electrode, and productivity can be improved. The conductive resin bonding material used here has a structure in which a conductive filler such as gold or silver is dispersed in a paste-like epoxy resin bonding material, and has a relatively high hardness when cured to obtain a hard conductive solid. Can do.

The crystal diaphragm in which the conductive solids S1 and S1 are integrally formed is conductively bonded to the electrode pads 42 and 43 of the ceramic package 4. Conductive bonding is performed using the conductive bonding materials S2 and S2, and in this embodiment, a silicone resin conductive bonding material having a lower level than the epoxy resin conductive bonding material used for the conductive solid is used. As described above, the electrode pad is provided in the digging portion of the bottom surface 40a, and the upper surface thereof is at a position lower than the bottom surface 40a, so that the conductive bonding materials S2 and S2 accumulate in the digging portion without flowing out. According to such a configuration, since the conductive bonding material is supplied to the dug portion, the conductive bonding material can be dug even when a low-viscosity material or a low thixotropic material is selected. It stays in the bayonet, making it difficult for mutual short circuit accidents to occur. Furthermore, although the thickness of the conductive solid is a factor that hinders the reduction in the height of the crystal unit, it is possible to adopt a support configuration in which a part of the conductive solid is accommodated in the digging portion. Contributes to lowering the child's height.

  The lid 6 for hermetically sealing the ceramic package 4 has a flat plate configuration that is rectangular in plan view. The lid 6 has a structure in which a metal brazing material is formed as a second metal film layer on a core material made of kovar (not shown in detail), for example, a multilayer of nickel layer, kovar core material, and silver brazing layer. The silver brazing layer, which is the second metal film layer, is configured to be joined to the first metal film layer of the ceramic package.

  The crystal vibrating plate 5 in which the conductive solid is integrated is stored in the electronic element housing portion 40 of the ceramic package 4, and the electrode pads 42 and 43 and the conductive solids S1 and S1 are connected to the lead electrode of the crystal vibrating plate 4 by the conductive resin bonding material. Conductive bonding is performed by S2 and S2. Thereafter, necessary bonding material curing treatment is performed, and hermetic sealing is performed in a vacuum atmosphere or an inert gas atmosphere. In the present embodiment, the above-mentioned silver brazing layer is melt-cured using a seam welding method and hermetically sealed. In the present embodiment, since the hardness of the conductive solid S1 is higher than that of the conductive bonding material, even if stress is inherent in the conductive bonding material, the stress is not easily transmitted to the crystal resonator element, and the characteristics can be stabilized. .

In the above embodiment, as a hermetic sealing method, the metal brazing material formed on the lid is joined by seam welding, but the metal ring body is formed at the opening of the package, and the metal ring body and the lid are formed. May be joined by seam welding or energy beam welding such as an electron beam, or a method of joining the package and lid with a metal brazing material in a heated atmosphere may be employed.

The present invention is not limited to the embodiment described above. For example, as shown in FIG. 7, it is good also as a structure which formed the base material exposed parts 511a and 521a of the quartz in a part of formation area of the conductive solid S1 (dotted line round frame) of the extraction electrodes 511 and 521. Such a configuration is particularly effective when the conductive solid is made of a conductive resin bonding material. The conductive resin bonding material is a bonding material having a structure in which a conductive filler such as gold or silver is dispersed in, for example, a resin-based bonding material, and generally has good bonding properties with the base portion of the crystal resonator element. When such a bonding material is used, the bonding strength between the crystal resonator element and the conductive solid can be improved by positively forming, for example, a slit-shaped or hole-shaped substrate exposed portion on the extraction electrode.

In the above-described embodiment, the surface-mount type crystal resonator using a ceramic package has been exemplified. However, the present invention can also be applied to a package mainly made of glass or a package mainly made of metal. The present invention can also be applied to a crystal oscillator in which a quartz filter and other electronic elements are integrally stored.

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  Applicable for mass production of crystal vibrating devices.

It is sectional drawing which shows 1st Embodiment by this invention. It is a top view which shows 1st Embodiment by this invention. It is a figure which shows the manufacturing method of 1st Embodiment by this invention. It is a figure which shows other embodiment by this invention. It is a figure which shows the patterning mask structure by this invention. It is sectional drawing which shows 2nd Embodiment by this invention. It is a figure which shows other embodiment by this invention. It is a figure which shows the comparison data of a DLD characteristic. It is a figure which shows the comparison data of a DLD characteristic. It is a figure which shows the comparison data of an aging characteristic. It is a figure which shows the comparison data of an aging characteristic.

1,4 Ceramic package (package)
Quartz diaphragm (quartz vibrator)
Lid S1 Conductive Solid S2 Conductive Bonding Material

Claims (8)

An electrode film forming step in which an excitation electrode and an extraction electrode are formed by a thin film forming means using a patterning mask in a plurality of crystal resonator elements;
  After the electrode film forming step, a step of forming a conductive solid by applying a conductive bonding material to each extraction electrode in a state accommodated in the patterning mask and curing the conductive bonding material;
  Applying a paste-like conductive bonding material to the electrode pads of the package;
  Mounting a conductive solid of the crystal resonator element on the paste-like conductive bonding material;
  A step of electrically and mechanically bonding the crystal resonator element and the package by curing the paste-like conductive bonding material;
  A method for manufacturing a quartz crystal vibration device. 2. The method for manufacturing a crystal resonator device according to claim 1, wherein the conductive solid is formed on only one surface or both surfaces or both surfaces and side surfaces of the crystal resonator element . 3. The method for manufacturing a quartz-crystal vibrating device according to claim 1, wherein the resin used for the conductive solid and the paste-like conductive bonding material is the same material . 4. The method for manufacturing a crystal vibrating device according to claim 1, wherein the resin used for the conductive solid and the paste-like conductive bonding material is a different material . 5. The method for manufacturing a crystal oscillating device according to claim 1, wherein the conductive solid has a hardness higher than that of the paste-like conductive bonding material after curing . 6. The method of manufacturing a crystal oscillating device according to claim 1, wherein a small bank portion is formed in the vicinity of the outer periphery of the electrode pad . The crystal vibration according to claim 1, wherein the electrode pad of the package is formed in a digging portion formed on a bottom surface inside the package, and the top surface of the electrode pad is lower than the bottom surface inside the package. Device manufacturing method. The conductive solid is made of a conductive resin bonding material, and the base electrode exposed portion of the crystal vibrating element is formed on the extraction electrode on which the conductive solid is formed, and the conductive solid is also bonded to the base exposed portion. A method for manufacturing a quartz-crystal vibrating device according to any one of claims 1 to 7 .

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