JP2007166435A - Crystal oscillation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal oscillation device that improves electric characteristics and has high operation reliability. <P>SOLUTION: Electrode pads 12, 13 are formed on a bottom surface inside a ceramic package 1, and a square crystal diaphragm 2 in terms of top view that is a crystal oscillation element is mounted between the electrode pads 12, 13. A first conductive resin joining material is cured and formed on the electrode pads. On the first conductive resin joining material, a second conductive resin joining material allows the crystal diaphragm 2, which is subjected to excitation electrode formation in a small range as compared with the first conductive resin joining material, to be subjected to conductive junction. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a high-frequency crystal oscillating device used in electronic equipment.

  A thickness vibration type crystal resonator using an AT-cut crystal resonator element generally has a configuration in which a pair of excitation electrodes are formed on the front and back surfaces of a crystal resonator element so as to face each other and an AC voltage is applied to the excitation electrodes. Various characteristics of such a crystal resonator depend on the quality and shape of the crystal resonator element (crystal resonator plate) itself, and also depend on the configuration of the excitation electrode and the extraction electrode, the connection configuration to the package, and the like. In particular, when a crystal resonator element is mounted on a package, a conductive bonding material is used, but the characteristics of the crystal resonator may become unstable due to the influence of the conductive bonding material or the package.

  For example, in a surface-mount type crystal resonator using a ceramic package, a crystal resonator element in which a paste-like conductive bonding material is applied to an electrode pad of a package and a pair of front and back excitation electrodes are formed on the conductive bonding material Is installed. An extraction electrode is extracted from the excitation electrode to the end face of the quartz crystal vibration element, and the extraction electrode portion is electromechanically bonded by the conductive bonding material. In such a configuration, the characteristics of the crystal resonator may become unstable due to the influence of the conductive bonding material or the package.

By the way, the extraction electrode formed on the crystal resonator element is difficult to be formed on the side surface of the crystal resonator element depending on the electrode film forming method, and the wraparound electrode cannot be formed on the opposite main surface. For example, when film formation is performed by a vacuum evaporation method, an electrode may not be formed on an intended side surface depending on an evaporation angle with respect to an evaporation source of the crystal resonator element.

Japanese Patent Application Laid-Open No. 2000-36716 (Patent Document 1) discloses such a problem, and a piezoelectric vibration element joining method for solving such a problem is provided in a recess of a package. In the manufacturing process of a piezoelectric device having a structure in which the concave portion is hermetically sealed in a state where the piezoelectric vibration elements having excitation electrodes are housed on both the front and back surfaces, the conductive material is conductive on two electrode pads formed on the step in the concave portion. When bonding the piezoelectric vibration element via the adhesive, the front and back surfaces and the end surface of the element plate from the edge side of the piezoelectric element plate to the lead electrode previously derived from the respective excitation electrodes on the front and back surfaces at one end edge of the piezoelectric vibration element And applying the conductive adhesive and mounting the piezoelectric vibration element that has been applied with the conductive adhesive in the above-described step on each of the pads so that the respective conductive adhesives correspond to each other. Degree bonding method consisting of capital is disclosed. A similar joining method is also disclosed in Japanese Patent No. 2583866 (Patent Document 2).

Moreover, in order to solve the above-mentioned problem, the structure which apply | coats an electrically conductive joining material to upper and lower sides is considered. For example, in Japanese Patent No. 3375445 (Patent Document 3), in a method for supporting a quartz crystal vibrating piece that supports a quartz crystal vibrating piece with a holding part, a step of applying a first adhesive to the holding part; A temporary curing step of evaporating the solvent of the applied first adhesive to make the first adhesive in a semi-cured state or more, and applying a second adhesive on the first adhesive A step of placing the crystal vibrating piece on the holding portion such that an end of the crystal vibrating piece comes into contact with the first adhesive and the second adhesive; and Applying an additional second adhesive to the end surface of the quartz crystal vibrating piece to fix the end, and solidifying the first and second adhesives at a curing temperature, When the first and second adhesives are cured and contracted, the crystal piece rises and the first contact Method of supporting the quartz crystal resonator element, characterized in that blocked by agents. Is disclosed.

By the way, in recent years, stability of DLD (Drive Level Dependance) characteristics has been demanded for crystal resonators. This is due to an increase in the opportunity to drive the crystal resonator at an extremely low voltage accompanying the low-voltage driving of the electronic equipment. The DLD characteristic is that the driving power applied to the crystal resonator is, for example, 0.001 μW to 300 μW. This shows the frequency characteristics when this is repeated and repeated. A crystal resonator with a poor DLD characteristic has a large frequency fluctuation range, a fluctuation in the frequency characteristic occurs, or the oscillation of the crystal oscillator stops depending on the case. Has a point.

There are various factors that cause the deterioration of the DLD characteristics. One of them is the influence of the stress in the conductive bonding material for bonding the crystal resonator element and the package, and the package itself. The effect of distortion is also considered. As shown in Patent Document 3, it is preferable that the bonding material for connecting the crystal resonator elements has a multi-stage structure, which has an effect of reducing the influence of package distortion, but has the following drawbacks. In Patent Document 3, a first conductive resin bonding material is applied to a substrate or a support spring, and a part of the second conductive resin bonding material positioned above the substrate or the support spring is also connected to the substrate or the support spring. A configuration is disclosed. In such a configuration, after both the bonding materials are cured, the stress generated in the substrate or the support spring may be transmitted to the crystal vibrating element via the bonding material. It may lead to deterioration of device characteristics.

JP 2000-36716 A Japanese Patent No. 2583866 Japanese Patent No. 3375445

  The present invention has been made in view of the above points, and an object of the present invention is to provide a quartz resonator device having improved electrical characteristics such as DLD characteristics and high operational reliability. Is.

  In order to achieve the above object, the present inventor has intensively studied the mounting configuration of the crystal resonator element on the package, and as a result, the crystal resonator device having stable electrical characteristics such as DLD characteristics has the following configuration. Is realized.

  That is, as shown in claim 1, there is provided a crystal resonator device in which a crystal resonator element in which a pair of excitation electrodes and lead electrodes connected to the excitation electrodes are formed on the front and back surfaces is mounted on the package. A first conductive resin bonding material is formed on the electrode pad formed, and the crystal vibration element is conductively bonded to the first conductive resin bonding material by a second conductive resin bonding material and is planar. In view of this, the second conductive resin bonding material is formed in a size smaller than that of the first conductive resin bonding material.

When the second conductive resin bonding material adheres to the electrode pad, the distortion of the package after curing of the bonding material gives unnecessary strain stress to the crystal resonator element via the second conductive resin bonding material. Therefore, it is preferable that the second conductive resin bonding material does not directly contact the electrode pad. That is, the second conductive resin bonding material is formed in a size smaller than the first conductive resin bonding material in a plan view, and the second conductive resin bonding material is the first conductive resin bonding material. A configuration in which the second conductive resin bonding material is not directly bonded to the electrode pad is preferable.

  The second conductive resin bonding material for bonding the crystal resonator element does not directly contact the electrode pad on the package side, and the stress strain on the package side is directly vibrated by the buffer action of the first conductive resin bonding material. Do not tell the element. Further, when viewed in plan, the second conductive resin bonding material is formed to be smaller in size than the first conductive resin bonding material, so that the buffer function by the first conductive resin bonding material acts effectively. For example, the distortion stress of the package can be efficiently absorbed by the first conductive resin bonding material, and adverse effects on the crystal resonator element mounted thereon can be suppressed as much as possible.

  According to a second aspect of the present invention, the crystal vibration element may be conductively bonded to the upper portion of the cured first conductive resin bonding material by the second conductive resin bonding material.

According to the above configuration, only the first conductive resin bonding material is cured alone, so that the strain stress at the time of curing is released, and the strain stress is prevented from being inherent in the cured bonding material. It will be in a stable state. By using such a conductive resin bonding material having a small strain stress as a buffer material, it is possible to suppress the occurrence of complicated strain stress in the bonding of the crystal resonator element by the second conductive resin bonding material.

With each of the above configurations, the first conductive resin bonding material is first cured and formed on the electrode pad, so that a physically stable base can be formed. The first conductive resin bonding material also has a buffering action. Since the quartz resonator element is conductively bonded onto the first conductive resin bonding material by the second conductive resin bonding material, no complicated internal stress is generated even when the second conductive resin bonding material is cured. It is possible to support a crystal resonator element that can be bonded and has excellent buffer performance. Therefore, the influence of stress on the curing of the conductive bonding material is suppressed, and the electrical characteristics such as the DLD characteristics in the quartz crystal vibration device can be improved. Furthermore, due to the mass effect of the conductive resin bonding material, stable support can be performed without tilting the free end of the crystal resonator element when bonded to the conductive bonding material. Therefore, a crystal vibration device with high reliability and stable characteristics can be obtained.

The second conductive resin bonding material may be formed on only one surface (one main surface) or both surfaces (both main surfaces) or both surfaces and side surfaces of the crystal resonator element. In the formation of only one side, the crystal resonator element is mounted on the first conductive resin bonding material formed on the electrode pad with mounting in either the front or back direction. Since the resin bonding material is not formed on the surface opposite to the bonding surface, it is effective for reducing the height of the crystal vibrating device. In this case, there may be a need for a lead-out electrode configuration in which the lead-out electrode is turned to the opposite main surface via the side surface of the crystal vibrating device.

  When the second conductive resin bonding material is formed on both sides of the crystal resonator element, it is not necessary to distinguish between the front and the back regarding the mounting on the electrode pad of the package. It can be carried out. In addition, when the second conductive resin bonding material is formed on both sides and side surfaces, the front and back electrodes can be made conductive without forming the above-described lead electrodes, and productivity can be improved.

  Further, as shown in claim 3, the first conductive resin bonding material and the second conductive resin bonding material may be the same kind of material. For example, the first conductive resin bonding material adopts a configuration in which a paste-like conductive bonding material is applied to the electrode pad and cured, and the second conductive resin bonding material is the first conductive resin bonding material. The crystal resonator element may be bonded using a bonding material similar to the material. These two bonding materials may be adjusted in properties such as different viscosity and thixotropy. In such a configuration, since both are the same type of material, “familiarity” at the bonding interface is good, and the bonding property between the two can be improved.

  Conversely, as shown in claim 4, the first conductive resin bonding material and the second conductive resin bonding material may be made of different materials. For example, the first conductive resin bonding material needs to be bonded to the electrode material (metal material) on the surface of the electrode pad, and a material that is “familiar” with the electrode pad is used and the second conductive resin bonding material is used. The resin bonding material can be improved in bonding reliability by adopting a crystal vibrating element or a material that is “familiar” with the extraction electrode formed on the crystal vibrating element.

Further, as shown in claim 5, the first conductive resin bonding material may have a softer hardness after curing than the second conductive resin bonding material, for example, the first conductive resin bonding material. A material having an excellent buffer function may be used as the bonding material, and the second conductive bonding material may be configured to be firmly bonded to the crystal resonator element. As a result, it is possible to reliably and stably hold the crystal resonator element and to obtain a support structure having excellent buffer performance.

The present invention also proposes a package configuration suitable for this configuration for bonding to the electrode pads of the package with a conductive resin bonding material. That is, as shown in claim 6, a small bank portion is formed in the vicinity of the outer periphery of the electrode pad, or as shown in claim 7, the electrode pad of the package is formed on the bottom surface inside the package. It is proposed that the upper surface of the electrode pad formed in the digging portion is lower than the inner bottom surface of the package.

According to each of the above configurations, it is possible to prevent the conductive bonding material from flowing out from the electrode pads. Therefore, even if a low-viscosity material or a low thixotropic material is selected for the conductive bonding material, the electrode pads are short-circuited. Accidents are less likely to occur. In particular, when a reduction in height is required, the first conductive resin bonding material may be formed in a thin layer, but in such a case, there is no outflow problem even if the viscosity of the bonding material is lowered.

Moreover, according to the structure of Claim 7, even if it selects a material with a low viscosity or a low thixotropy of a conductive bonding material by supplying a conductive bonding material to a digging part, a conductive bonding material Stays in the dug, making it difficult for mutual short-circuit accidents to occur. In addition, the multi-layer bonding material configuration is a factor that hinders the low profile of the quartz vibration device, but it is possible to adopt a support configuration in which a part of the conductive resin bonding material is accommodated in the digging portion. Contributes to lowering the height of crystal vibrating devices.

Furthermore, the present invention also proposes a configuration for improving the formation strength of the second conductive resin bonding material formed on the extraction electrode portion of the crystal resonator element. According to an eighth aspect of the present invention, the exposed electrode on which the second conductive resin bonding material is formed is formed with a base exposed portion of the crystal vibrating element, and the second conductive resin bonding material is bonded to the lead electrode and the base exposed portion. It is the structure which is done. The conductive resin bonding material is a bonding material having a structure in which a conductive filler such as gold or silver is dispersed in, for example, a resin-based bonding material, and generally has good bonding properties with the base portion of the crystal resonator element. When such a bonding material is used, the bonding strength and bonding stability between the crystal resonator element and the conductive resin bonding material are improved by positively forming, for example, a slit-like or hole-like substrate exposed portion on the extraction electrode. The characteristics can be stabilized in combination with the effects of the above-described configurations.

  As described above, according to the present invention, the influence of the stress in the curing of the conductive bonding material or the stress from the package is suppressed, and the electrical characteristics such as the DLD characteristics and the aging characteristics are stabilized and the reliability is improved. High crystal oscillation device can be obtained.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
A first embodiment of the present invention will be described with reference to FIGS. 1 to 3 by taking a surface-mounted crystal resonator as an example. FIG. 1 is a cross-sectional view in the package long side direction showing the first embodiment, FIG. 2 is a plan view before airtight sealing with a lid, and FIG. 3 is a diagram showing a procedure for mounting a crystal resonator element. The surface-mount type crystal resonator includes a ceramic package 1 having a concave portion with an open top, a crystal vibration plate 2 that is a crystal vibration element housed in the package, and a lid 3 bonded to the opening of the package. Consists of. In FIGS. 1 and 3, the description of the excitation electrode and the extraction electrode formed on the crystal diaphragm 2 is omitted.

  The ceramic package 1 has a structure in which a ceramic such as alumina and a conductive material are appropriately laminated, and is a structure having a concave shape in cross section and having an electronic element housing portion 10 and a bank portion 11 formed around the electronic device housing portion 10. The upper surface of the bank portion 11 around the electronic element housing portion is flat, and a circumferential first metal film layer 11a is formed on the bank portion. The upper surface of the first metal film layer 11a is also formed to be flat. For example, the metal film layers are formed in the order of tungsten, nickel, and gold. Tungsten is integrally formed during ceramic firing by metallization technology, and nickel and gold layers are formed by plating technology.

  Castellations C1, C2, C3, C4 extending in the vertical direction are formed at the four corners of the outer periphery of the ceramic package. The castellation has a configuration in which arc-shaped cutouts are formed in the vertical direction, and is necessary when the wafer is cut into pieces as described above.

  The first metal film layer 11a is formed on the lower surface (back surface) of the ceramic package by a via hole (not shown) formed in the ceramic package or a conductive film (not shown) formed in the castellation portion. It is electrically connected to the external connection electrode and finally grounded.

  Electrode pads 12 and 13 are formed on the inner bottom surface of the ceramic package 1, and these electrode pads are respectively connected to external connection electrodes 14 and 15 formed on the bottom surface outside the package via connection electrodes (not shown). It is pulled out as an input / output terminal. In these electrode pads, for example, a metal layer is formed on the upper surface of the tungsten metallized layer by a method such as plating in the order of nickel and gold. In addition, the electrode pad may have a cross-sectional shape that is a concave shape having a small bank portion at the outer peripheral portion to facilitate the formation of the first conductive resin bonding material.

  First conductive resin bonding materials S1 and S1 are formed on the upper flat surfaces of the electrode pads 12 and 13 to form a conductive base. For example, as shown in FIG. 3A, the first conductive resin bonding material is formed by applying a paste-like silicone-based resin conductive bonding material on each of the electrode pads 12 and 13 and curing the same. Can be obtained. Since the said 1st conductive resin joining material is hardened | cured independently, there is little influence of the stress from others at the time of hardening, and it has a structure with a small internal stress.

  The first conductive resin bonding material on the electrode pads 12 and 13 is mounted with a crystal diaphragm 2 having a rectangular shape in plan view, which is a crystal resonator element. The crystal diaphragm 2 is, for example, an AT-cut crystal diaphragm driven by thickness-shear vibration. Excitation electrodes 21 and 22 (22 are not shown) having a rectangular shape in plan view are formed on the front and back surfaces thereof. The lead electrodes 211 and 221 (221 not shown) are led out from the respective excitation electrodes 21 and 22 to one short side.

  Second conductive resin bonding materials S2 and S2 are formed over the front and back main surfaces and the side surfaces at the short side edge portions of the extraction electrodes 211 and 221. In such a configuration, the front and back electrodes can be conducted without forming a lead electrode to the opposite main surface to the lead electrode, and productivity can be improved. In the present embodiment, a configuration in which a silicone resin conductive bonding material is cured on the second conductive resin bonding materials S2 and S2 is used. The silicone resin conductive bonding material uses the same type of bonding material as the first conductive resin bonding material described above, and a conductive filler such as gold or silver is dispersed in a paste-like silicone resin bonding material. It is a configuration. The bonding material can obtain a conductive resin bonding material having a buffer function by elasticity and good conductivity even after curing.

Further, the size of the second conductive resin bonding material in plan view is smaller than the size of the first conductive resin bonding material in plan view and is formed so as to be within the formation range of the first conductive resin bonding material. Has been. With such a configuration, since the second conductive resin bonding material does not directly bond to the electrode pad, the influence of the stress on the package 1 side can be hardly applied to the crystal diaphragm 2.

  The first conductive resin bonding material formed on the electrode pads 12 and 13 of the ceramic package 1 by using the crystal diaphragm in which the paste-like second conductive resin bonding materials S2 and S2 are integrally formed. Mounted on and conductively bonded. Specifically, the main surface of the quartz diaphragm is sucked by the quartz diaphragm holding tool T, and the second conductive resin bonding material is applied to the extraction electrode portion with a dispenser or the like in the sucked and held state. After the application, as shown in FIG. 3B, immediately mounted on the first conductive resin bonding material formed on the electrode pads 12 and 13 as shown in FIG. 3B, conductive bonding is performed. Note that, due to the mass effect of the second conductive resin bonding materials S2 and S2, stable support can be performed without tilting the free end of the crystal diaphragm 2 during bonding.

  The lid 3 for hermetically sealing the ceramic package has a flat plate configuration having a rectangular shape in plan view. Although not shown, the lid 3 has a configuration in which a metal brazing material is formed as a second metal film layer 32 on a core material made of kovar. More specifically, for example, a nickel layer, kovar core material, copper In this order, the silver brazing layer, which is the second metal film layer, is joined to the first metal film layer of the ceramic package. Note that the outer shape of the lid in plan view is substantially the same as the outer shape of the ceramic package.

  The crystal diaphragm 2 is housed in the electronic element storage portion 10 of the ceramic package 1 and is conductively bonded by the conductive resin bonding materials S2 and S2. Thereafter, necessary bonding material curing treatment is performed, and hermetic sealing is performed in a vacuum atmosphere or an inert gas atmosphere. In the present embodiment, the above-mentioned silver brazing layer is melt-cured using a seam welding method and hermetically sealed.

  A second embodiment of the present invention will be described with reference to FIGS. 4 to 6 by taking a surface-mount type crystal resonator as an example. FIG. 4 is a cross-sectional view showing the second embodiment, FIG. 5 is a plan view of a crystal vibrating plate (crystal vibrating element) on which electrodes are formed, and FIG. 6 is a diagram showing a procedure for mounting the crystal vibrating element. The surface-mount type crystal resonator includes a ceramic package 4 having a recess having an upper opening, a crystal vibrating plate 5 that is a crystal vibrating element housed in the package, and a lid 6 bonded to the opening of the package. Consists of. In FIGS. 4 and 6, the description of the excitation electrode and the extraction electrode formed on the crystal diaphragm 5 is omitted.

  The ceramic package 4 has a configuration in which a ceramic such as alumina and a conductive material are laminated, and has a concave shape when viewed in cross section, and has an electronic element housing portion 40. The upper surface of the bank portion 41 around the electronic element housing portion is flat, and a circumferential first metal film layer 41a is formed on the entire surface of the bank portion. The upper surface of the first metal film layer 41a is also formed to be flat and has a layer structure of tungsten, nickel, and gold. Tungsten is integrally formed during ceramic firing by metallization technology, and nickel and gold layers are formed by plating technology.

  The first metal film layer 41a is externally formed on the lower surface (back surface) of the ceramic package by a via hole (not shown) formed in the ceramic package or a conductive film (not shown) formed in the castellation portion. It is electrically connected to the connection electrode and finally connected to ground.

  Electrode pads 42 and 43 (43 are not shown) are formed on the inner bottom surface 40a of the electronic element housing portion 40 of the ceramic package 4, and these electrode pads are connected to the outside of the package via connecting electrodes (not shown). Are respectively connected to the external connection electrodes 44 and 45 formed on the bottom surface as input / output terminals. A digging portion 40b is formed at the electrode pad forming position of the bottom surface 40a, and the electrode pads 42 and 43 are formed in the digging portion 40b, and the upper surface of the electrode pad is positioned lower than the bottom surface 40a. It has a configuration. Since these dug portions 40b are formed for each of the electrode pads 42 and 43, two independent dug portions are formed on the inner bottom surface 40a.

  First conductive resin bonding materials S1 and S1 are formed on the upper flat surfaces of the electrode pads 42 and 43 in the digging portion to constitute a conductive base. For example, the first conductive resin bonding material is formed by applying a paste-like silicone resin conductive bonding material on each of the electrode pads 12 and 13 as shown in FIG. Is obtained. Since the said 1st conductive resin joining material is hardened | cured independently, there is little influence of the stress from others at the time of hardening, and it has a structure with a small internal stress.

  FIG. 6A shows a state in which the above-described first conductive resin bonding material is formed by curing, and FIG. 6B shows a paste-like second conductive material on the first conductive resin bonding material. The state which applied the adhesive resin bonding material is shown. At this time, the plan view size of the second conductive resin bonding material S2 is formed in a range smaller than the plan view size of the first conductive resin bonding material S1. The second conductive resin bonding material S2 uses an epoxy resin bonding material in the present embodiment. The epoxy resin has a relatively high hardness after curing and can provide stable support. Immediately after the application of the second conductive resin bonding material, as shown in FIG. 6C, the quartz vibration plate 5 is placed on the paste-like second conductive resin bonding material portion by the mounting tool T having a suction holding function. To be installed.

The quartz diaphragm 5 is, for example, an AT-cut quartz diaphragm that is driven by thickness shear vibration. Excitation electrodes 51 and 52 (52 are not shown) having a rectangular shape in plan view are formed on the front and back surfaces of the quartz diaphragm 5. The leading electrodes 511 and 521 are led out from the respective excitation electrodes on one short side. In the extraction electrodes 511 and 521, quartz substrate exposed portions 511a and 521a are formed in a part of the formation region of the second conductive resin bonding material S2 (dotted line round frame in FIG. 5). The conductive resin bonding material is a bonding material having a structure in which a conductive filler such as gold or silver is dispersed in, for example, a resin-based bonding material, and generally has good bonding properties with the base portion of the crystal resonator element. When such a bonding material is used, the bonding strength between the crystal resonator element and the conductive resin bonding material body can be improved by positively forming, for example, a slit-shaped or hole-shaped substrate exposed portion on the extraction electrode. it can.

The crystal diaphragm 5 is conductively bonded to the electrode pads 42 and 43 of the ceramic package 4. As described above, the electrode pad is provided in the digging portion 40b of the bottom surface 40a, and the upper surface is located at a position lower than the bottom surface 40a. The bonding materials S1 and S1 accumulate in the dug portion without flowing out. According to such a configuration, even when a low-viscosity material or a low-thixotropic material is selected by supplying the conductive bonding material to the dug portion 40b, the conductive bonding material is It stays in the excavation part, and it becomes difficult for mutual short circuit accidents to occur. Further, the formation of the second conductive resin bonding material increases the thickness and hinders the reduction in the height of the crystal resonator. A support structure that accommodates the portion can be employed, which contributes to a reduction in the height of the crystal unit.

  The lid 6 for hermetically sealing the ceramic package 4 has a flat plate configuration that is rectangular in plan view. The lid 6 has a structure in which a metal brazing material is formed as a second metal film layer on a core material made of kovar (not shown in detail), for example, a multilayer of nickel layer, kovar core material, and silver brazing layer. The silver brazing layer, which is the second metal film layer, is configured to be joined to the first metal film layer of the ceramic package.

  The crystal diaphragm 5 is housed in the electronic element housing portion 40 of the ceramic package 4 and is conductively bonded by the conductive resin bonding materials S2 and S2. Thereafter, necessary bonding material curing treatment is performed, and hermetic sealing is performed in a vacuum atmosphere or an inert gas atmosphere. In the present embodiment, the above-mentioned silver brazing layer is melt-cured using a seam welding method and hermetically sealed. In the present embodiment, since the first conductive resin bonding material has a lower hardness than the second conductive resin bonding material S2 and has a buffer function, the stress strain of the package or the like can reach the crystal resonator element. It is difficult to be transmitted and the characteristics can be stabilized.

In the above embodiment, as a hermetic sealing method, the metal brazing material formed on the lid is joined by seam welding, but the metal ring body is formed at the opening of the package, and the metal ring body and the lid are formed. May be joined by seam welding or energy beam welding such as an electron beam, or a method of joining the package and lid with a metal brazing material in a heated atmosphere may be employed.

In the above-described embodiment, the surface-mount type crystal resonator using a ceramic package has been exemplified. However, the present invention can also be applied to a package mainly made of glass or a package mainly made of metal. The present invention can also be applied to a crystal oscillator in which a quartz filter and other electronic elements are integrally stored.

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  Applicable for mass production of crystal vibrating devices.

It is sectional drawing which shows 1st Embodiment by this invention. It is a top view which shows 1st Embodiment by this invention. It is a figure which shows the manufacturing method of 1st Embodiment by this invention. It is sectional drawing which shows 2nd Embodiment by this invention. It is a top view of the crystal diaphragm which shows 2nd Embodiment by this invention. It is a figure which shows the manufacturing method of 2nd Embodiment by this invention.

Explanation of symbols

1,4 Ceramic package (package)
Quartz diaphragm (quartz vibrator)
Lid S1 First conductive resin bonding material S2 Second conductive resin bonding material

Claims (8)

A quartz-crystal vibrating device in which a quartz-crystal vibrating element having a pair of excitation electrodes on the front and back surfaces and an extraction electrode connected to the excitation electrode is mounted on a package, wherein the first conductive material is formed on the electrode pad formed on the package. A conductive resin bonding material is formed, and the crystal resonator element is conductively bonded onto the first conductive resin bonding material by a second conductive resin bonding material, and the second conductive resin bonding is seen in plan view. The quartz crystal vibration device, wherein the material is formed in a size smaller than that of the first conductive resin bonding material. 2. The crystal vibration device according to claim 1, wherein the crystal vibration element is conductively bonded to the upper portion of the cured first conductive resin bonding material by a second conductive resin bonding material. The crystal vibrating device according to claim 1, wherein the first conductive resin bonding material and the second conductive resin bonding material are the same material. 4. The crystal vibration device according to claim 1, wherein the first conductive resin bonding material and the second conductive resin bonding material are different materials. 5. The quartz vibration device according to any one of claims 1 to 4, wherein the first conductive resin bonding material has a hardness after curing that is softer than that of the second conductive resin bonding material. 6. The quartz crystal vibrating device according to claim 1, wherein a small bank portion is formed in the vicinity of the outer periphery of the electrode pad. The crystal vibration according to claim 1, wherein the electrode pad of the package is formed in a digging portion formed on a bottom surface inside the package, and the top surface of the electrode pad is lower than the bottom surface inside the package. device. The lead electrode on which the second conductive resin bonding material is formed is formed with a base exposed portion of a crystal resonator element, and the second conductive resin bonding material is also bonded to the base exposed portion. The quartz crystal vibration device according to claim 1.

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