JP4806241B2 - Substrate processing apparatus and substrate lift apparatus - Google Patents

Description

The present invention relates to a substrate processing instrumentation 置及 beauty substrate lift device, in particular, relates to a substrate lift device provided in the COR processing module carrying out the COR processing on a substrate.

  Conventionally, a CVD apparatus that forms a desired film on the surface of a substrate, for example, a wafer for semiconductor devices (hereinafter simply referred to as “wafer”) by CVD (Chemical Vapor Deposition) is known.

  The CVD apparatus includes a plurality of process modules (hereinafter referred to as “PM”) in order to sequentially perform a CVD process and a process associated therewith (for example, a wafer cleaning process and a heat treatment). Each PM accommodates a wafer, and the accommodated wafer is subjected to a CVD process and a process associated therewith. Each PM is radially connected to a transfer module (hereinafter referred to as “TM”) including a transfer arm for transferring a wafer, and the wafer passes through the TM when a corresponding process is performed in each PM. Is then carried into the next PM.

In recent years, a wiring layer formed on a semiconductor device has a multi-layered wiring structure corresponding to high density and high integration of circuits. For electrical connection between the semiconductor device and the wiring layer, a contact hole that penetrates part of the wiring layer in the stacking direction and reaches the semiconductor device is used.
A via hole penetrating a part of the wiring layer in the stacking direction is used for electrical connection between the wirings in the wiring layer. Contact holes and via holes are formed by etching, and each hole is filled with a metal such as aluminum (Al) or tungsten (W) or an alloy containing the metal as a main component. Prior to filling of the metal or alloy, each hole is filled in order to ensure contact between the metal or alloy filled in the hole and the silicon (Si) substrate or poly silicon layer in the semiconductor device. A titanium (Ti) layer is formed inside, and a titanium nitride (TiN) layer is further formed thereon as a barrier layer. In general, a film formed by CVD does not increase electrical resistance and the film thickness becomes uniform (good step coverage). Therefore, CVD is used to form the Ti layer and TiN layer described above. It is done. In particular, in CVD using TiCl ₄ , when Ti film is grown, Ti reacts with Si of the substrate and TiSi ₂ selectively grows on the Si diffusion layer at the bottom of the hole in a self-aligned manner. As a result, the ohmic resistance related to conductivity at the bottom of the hole can be reduced.

By the way, the binding energy of TiCl ₄ is very high. When TiCl ₄ is decomposed only by thermal energy, the ambient temperature needs to be 1200 ° C. or higher. Therefore, plasma CVD using not only thermal energy but also plasma energy for the decomposition of TiCl ₄ is used for forming the Ti film. In this plasma CVD, the ambient temperature may be about 650 ° C.

  On the other hand, since a natural oxide film is easily formed on the silicon or polysilicon layer of the substrate, the natural oxidation is performed prior to the above-described plasma CVD in order to reduce the contact resistance between the formed Ti layer and silicon. It is necessary to remove the film.

Conventionally, as a removal process of a natural oxide film, a removal process using a dilute hydrofluoric acid gas or a process of forming an inductively coupled plasma using hydrogen (H ₂ ) gas and argon (Ar) gas and removing it by the plasma is known. (For example, refer to Patent Document 1).

However, in recent years, with the miniaturization of semiconductor devices, the thickness (depth) of the Si diffusion layer has also decreased, and the growth of the TiSi ₂ film does not proceed in the CVD of the Ti film, and the contact resistance is reduced to a desired value. It has become difficult. In order to realize a low contact resistance in a thin TiSi ₂ film, it is necessary to form a large amount of TiSi ₂ having a C54 phase (crystal structure) in the film. However, in the CVD using only the thermal energy described above, the ambient temperature is low. Since it is high, it is difficult to form a large amount of C54 phase TiSi ₂ that is easily formed at a low temperature. Further, in the above-described plasma CVD, many TiSi ₂ crystals having different particle sizes are formed. In particular, when the removal process of the natural oxide film is performed using the argon gas plasma prior to the CVD of the Ti film, the Si diffusion layer is damaged by the plasma in the removal process and is amorphousized nonuniformly. The grain size of each crystal of TiSi ₂ formed in the TiSi ₂ film formed on the Si diffusion layer is greatly different. In a TiSi ₂ film formed by TiSi ₂ crystals having greatly different particle sizes, the crystal density is sparse, so that the specific resistance is high and the contact state with the Si diffusion layer is not stable. As a result, the contact resistance increases.

  In view of this, it has now been studied to apply a COR (Chemical Oxide Removal) process for removing the natural oxide film by a chemical reaction to the Si diffusion layer (diffusion layer).

A PM that performs COR processing on a wafer includes a chamber that accommodates the wafer and a mounting table (stage) that is placed in the chamber and on which the wafer is mounted. The mounting table lifts the wafer when the wafer is carried in and out. It has a plurality of lift pins. Each lift pin penetrates the mounting table and is lifted and lowered by a lift pin assembly (lift pin lifting device) disposed under each lift pin (see, for example, Patent Document 2). In this PM, the lift pin assembly is disposed outside the chamber, that is, in the atmosphere, and the lift pin protrudes into the chamber which is a decompressed atmosphere, so that the lift pin accommodation hole in the mounting table communicates between the atmosphere and the chamber. Therefore, the lift pin accommodation hole is filled with grease to seal the inside of the chamber from the atmosphere.
JP-A-4-336426 US Patent Application Publication No. 2004/0182315

  However, in the CVD apparatus, each PM communicates with each other via TM, so that the grease, which is an organic substance evaporated from the PM in the COR process, enters the PM in the CVD process to form the Ti layer or the TiN layer, and the Ti layer or the TiN layer. There is a problem that a film formation defect occurs.

An object of the present invention is to provide a substrate processing instrumentation 置及 beauty substrate lift device capable of preventing the occurrence of defective film formation.

In order to achieve the above object, a substrate processing apparatus according to claim 1 is provided with a COR processing module that performs COR processing on a substrate, a CVD processing module that performs CVD processing on the substrate, the COR processing module, and the CVD processing module. And a transport module for transporting the substrate, the COR processing module being disposed in the chamber and placing the substrate on the chamber. the mounting table, the disposed in the chamber possess a substrate lifting device for lifting the substrate from the mounting table the substrate lifting device includes a rod-shaped lift pins, a lifting member for lifting in the periphery of the mounting table The lift pin and the interlocking member that interlocks the lifting member, and the mounting table is arranged along a lifting direction of the lifting member. An interlocking member housing groove for housing at least a part of the interlocking member, an opening in the mounting surface that communicates with the interlocking member housing groove and on which the substrate is placed in the mounting table, and A lift pin receiving hole for receiving the lift pin; the lift pin is placed on the interlocking member in the interlocking member receiving groove; and the lift member is capable of adjusting an amount of protrusion of the lift pin from the mounting surface. A protrusion amount adjusting mechanism, and the protrusion amount adjusting mechanism is connected to the interlocking member and has a polygonal columnar block member having a screw on at least a part of a side surface thereof, and the lifting member of the block member. A height-defining member that defines the height of the block member, a nut member that is threadedly engaged with the male screw of the block member, a nut member that is seated on the lift member, and the lift portion of the block member Characterized by chromatic and a rotation regulating member for regulating the rotation relative.

3. The substrate processing apparatus according to claim 2 , wherein a COR processing module that performs COR processing on the substrate, a CVD processing module that performs CVD processing on the substrate, the COR processing module and the CVD processing module are connected, and the substrate The COR processing module includes a chamber that accommodates the substrate, a mounting table that is disposed in the chamber and places the substrate, and a chamber in the chamber. A substrate lift device that is disposed and lifts the substrate from the mounting table; the substrate lifting device includes a rod-shaped lift pin; a lifting member that moves up and down around the mounting table; and the lift pin and the lifting member. An interlocking member to be interlocked, and the mounting table is drilled along the ascending / descending direction of the elevating member, and the interlocking An interlocking member housing groove for housing at least a part of the material, and a lift pin housing hole that communicates with the interlocking member housing groove and opens on the mounting surface on which the substrate is placed on the mounting table and houses the lift pin The lift pin is placed on the interlocking member in the interlocking member receiving groove, and the lifting member has a protrusion amount adjusting mechanism capable of adjusting the protrusion amount of the lift pin from the mounting surface. The interlocking member has an end portion having a predetermined shape, the protrusion amount adjusting mechanism has a rotation restricting portion having a shape complementary to the predetermined shape of the end portion, and the lifting member A rotation regulating member to be fastened; a height adjusting member connected to the elevating member and mounting the end; and a bolt for fastening the interlocking member, the height adjusting member and the elevating member to each other. That features To.

In order to achieve the above object, a substrate lift apparatus according to claim 3 is provided in a chamber of a substrate processing module, comprising: a chamber that accommodates a substrate; and a mounting table that is disposed in the chamber and places the substrate. A substrate lift device that lifts the substrate from the mounting table, a rod-shaped lift pin, a lifting member that moves up and down around the mounting table, and an interlocking member that interlocks the lift pin and the lifting member The mounting table is drilled along the ascending / descending direction of the elevating member, and communicates with the interlocking member accommodating groove for accommodating at least a part of the interlocking member; together with the substrate are opened on the mounting surface to be mounted in the mounting table, and a lift pin receiving hole for accommodating the lift, the lift pins, the interlocking member Placed on the interlocking member in Description groove, the lifting member has an adjustable protrusion amount adjusting mechanism projection amount from the mounting surface of the lift pins, the projection amount adjusting mechanism, the interlocking member And a columnar block material having a screw on at least a part of a side surface thereof, a height defining member for defining a height of the block material from the elevating member, and an external thread of the block material and which has a threaded internal thread, characterized Rukoto that Yusuke a nut member seated on the lifting member, and a rotation regulating member for regulating the rotation with respect to the elevation member of the block material.

The substrate lift apparatus according to claim 10 , wherein the substrate lift apparatus is disposed in the chamber of a substrate processing module including a chamber that accommodates a substrate, and a mounting table that is disposed in the chamber and places the substrate. A substrate lift apparatus that lifts the table from the mounting table, comprising: a rod-shaped lift pin; a lifting member that moves up and down around the mounting table; and an interlocking member that interlocks the lift pin and the lifting member. Is formed along the ascending / descending direction of the elevating member, accommodates at least a part of the interlocking member, communicates with the interlocking member accommodating groove, and mounts the substrate on the mounting table. And a lift pin receiving hole for receiving the lift pin, the lift pin being connected to the interlocking member in the interlocking member receiving groove. Is placed on wood, the lifting member has an adjustable protrusion amount adjusting mechanism projection amount from the mounting surface of the lift pins, the interlocking member has an end portion which exhibits a predetermined shape, the The protrusion amount adjusting mechanism includes a rotation restricting portion having a shape complementary to a predetermined shape of the end portion, and is connected to the rotation restricting member fastened to the elevating member, the elevating member, and the end And a bolt for fastening the interlocking member, the height adjusting member, and the elevating member to each other.

According to the substrate processing equipment according to claim 1, COR processing modules connected to the CVD processing module for performing CVD processing the substrate via the transfer module comprises a chamber for accommodating a substrate, disposed within the chamber Since the substrate lifting device has a mounting table for mounting the substrate and a substrate lifting device for lifting the substrate from the mounting table, and the substrate lifting device is disposed in the chamber, a hole for communicating the inside of the chamber and the atmosphere in the mounting table is provided. There is no need to provide grease, and the need to use grease can be eliminated. Therefore, when the substrate is subjected to the CVD process, it is possible to prevent a film formation defect from occurring on the substrate.

According to the substrate processing apparatus of claim 1 , the rod-like lift pins are moved up and down to move the lift pins up and down around the mounting table in the interlocking member receiving groove formed in the mounting table along the lifting direction of the lifting member. The lift pin is placed in the interlocking member to be interlocked with the member, and the lift pin is accommodated in the lift pin accommodation hole that communicates with the interlocking member accommodation groove and opens in the placement surface on which the substrate is placed on the placement table. The substrate can protrude freely on the mounting surface, and thus the substrate can be stably lifted on the mounting surface.

According to the substrate processing apparatus described in claims 1 and 2 and the substrate lift apparatus described in claims 3 and 4 , the elevating member has a protrusion amount adjusting mechanism capable of adjusting the protrusion amount of the lift pin from the mounting surface. Therefore, when a plurality of lift pins are arranged, the substrate can be lifted more stably on the placement surface by adjusting the amount of protrusion of each lift pin from the placement surface, and directly below the placement table. Therefore, it is possible to eliminate the need to squeeze the mounting table large in order to arrange the protrusion amount adjusting mechanism in the mounting table. Therefore, a cooling system and an electrode plate for electrostatic adsorption are built in the mounting table to stably perform desired processing on the substrate. be able to.

According to the substrate lift device of the substrate processing apparatus and the third aspect of claim 1, wherein, the protrusion amount adjustment mechanism, while being connected to the interlocking member, the polygonal columnar having external threads on at least part of the side block A block member, a height defining member that defines the height of the block material from the lifting member, a nut member that is threadedly engaged with the male screw of the block material, and a seat member that is seated on the lifting member, and a lifting member for the block material A rotation restricting member that restricts rotation relative to the block member, and when the nut member is seated on the lifting member while screwing the nut member into the block member, the rotation of the block member is restricted from the lifting member of the block member. The block material can be fixed to the elevating member without changing the height. Therefore, the height of the interlocking member from the elevating member, and pulling the lift pin from the mounting surface can be easily and reliably performed. It can be adjusted.

According to the substrate processing apparatus of claim 2 and the substrate lift apparatus of claim 4 , the interlocking member has an end portion having a predetermined shape, and the protrusion adjustment mechanism has a predetermined shape of the end portion of the interlocking member. A rotation restricting member having a shape complementary to the rotation member, and a rotation restricting member fastened to the elevating member, a height adjusting member connected to the elevating member and mounting an end of the interlocking member, and an interlocking member The height adjusting member and the bolt for fastening the elevating member to each other, the height adjusting member is connected to the elevating member, and the end of the interlocking member is placed on the height adjusting member, and the interlocking member is formed by the bolt. When the height adjusting member and the elevating member are fastened to each other, the rotation of the interlocking member relative to the elevating member can be restricted. Moreover, the height from the raising / lowering member of an interlocking member can be adjusted by adjusting the protrusion amount from the raising / lowering member of a height adjustment member. As a result, the amount of protrusion of the lift pin from the mounting surface can be adjusted easily and reliably.

According to the substrate lift device of the third and fourth aspects, the substrate lift device is disposed in the chamber of the substrate processing module including the chamber and the mounting table, and the rod-shaped lift pins are arranged in the lifting direction of the lifting member on the mounting table. In the interlocking member receiving groove drilled along, the lift pin is placed on the interlocking member that interlocks with the elevating member that moves up and down around the mounting table, and the lift pin communicates with the interlocking member receiving groove and in the mounting table Since it is accommodated in the lift pin accommodation hole that opens to the placement surface on which the substrate is placed, it is not necessary to provide a hole for communicating the inside of the chamber and the atmosphere in the placement table, and the need for using grease can be eliminated. Therefore, when a film formation process is performed on the substrate, it is possible to prevent a film formation defect from occurring on the substrate. Further, the lift pins can freely protrude on the placement surface, and thereby the substrate can be stably lifted on the placement surface.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, the substrate processing apparatus according to the first embodiment of the present invention will be described.

  FIG. 1 is a plan view showing a schematic configuration of a CVD processing apparatus as a substrate processing apparatus according to the present embodiment.

  In FIG. 1, a CVD processing apparatus 10 includes four process modules (hereinafter referred to as “PM”) 11 to 14, a transfer module (hereinafter referred to as “TM”) 15, and a loader module (hereinafter referred to as “LM”). 16) and two load lock modules (hereinafter referred to as "LLM") 17 and 18. In this CVD processing apparatus 10, four PMs 11 to 14 are radially connected to TM 15, and TM 15 and LM 16 are connected via two LLMs 17 and 18.

  In addition to the LLMs 17 and 18 described above, the LM 16 is mounted with a hoop (Front Opening Unified Pod) as a container for accommodating 25 semiconductor device wafers (hereinafter simply referred to as “wafers”). One hoop mounting table 19 and an orienter 20 for pre-aligning the position of the wafer carried out of the hoop are connected. Further, the LM 16 has a built-in transfer arm (not shown) for transferring a wafer, and the transfer arm transfers an unprocessed or processed wafer between the hoop, the orienter 20 and the LLMs 17 and 18.

  The PM 11 has a chamber 23 which will be described later, and performs COR processing on the wafer accommodated in the chamber 23. The PM 12 also has a chamber (not shown), and a PHT (Post Heat Treatment) process described later is performed on the wafer accommodated in the chamber. The PM 13 also has a chamber (not shown) and performs a CVD process for forming a Ti layer on the surface of the wafer accommodated in the chamber. Further, the PM 14 also has a chamber (not shown), and performs a CVD process for forming a TiN layer on the surface of the wafer accommodated in the chamber.

  The TM 15 incorporates a transfer arm (not shown) for transferring a wafer, and the transfer arm transfers an unprocessed or processed wafer between the PMs 11 to 14 and the LLMs 17 and 18. Each of the LLMs 17 and 18 incorporates a mounting table (not shown) on which a wafer is placed, and temporarily stores the wafers carried by the transfer arm of the LM 16 or the transfer arm of the TM 15.

  In this CVD processing apparatus 10, the wafers are carried in and out of PMs 11 to 14 in this order by the transfer arm of TM15. Thus, the COR process, the PHT process, the CVD process for forming the Ti layer, and the CVD process for forming the TiN layer are sequentially performed on the wafer. These series of processes are performed by a system controller (not shown) of the CVD processing apparatus 10 described later executing a program corresponding to the series of processes.

  The COR process is a process in which a foreign substance on the diffusion layer of the wafer, for example, an oxide film and a gas molecule is chemically reacted to generate a product. The PHT process is performed by heating the wafer subjected to the COR process, In this process, a product generated on the wafer by a chemical reaction of the COR process is vaporized and thermally oxidized (Thermal Oxidation) to be removed from the wafer. As described above, the COR process and the PHT process are processes for removing the oxide film on the diffusion layer without using a water component, and thus correspond to a dry cleaning process (dry cleaning process).

In the PM 11 of the CVD processing apparatus 10, ammonia gas and hydrogen fluoride (anhydrous HF) gas are used as gases. Here, the hydrogen fluoride gas promotes the corrosion of the oxide film on the diffusion layer, and the ammonia gas restricts the reaction between the oxide film and the hydrogen fluoride gas as necessary, and finally stops. Synthesize reaction by-products (By-product). Specifically, in PM11, an oxide film, for example, SiO ₂ is removed by using the following chemical reaction in the COR process and the PHT process.
(COR processing)
SiO ₂ + 4HF → SiF ₄ + 2H ₂ O ↑
SiF ₄ + 2NH ₃ + 2HF → (NH ₄ ) ₂ SiF ₆
(PHT treatment)
(NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑ + 2NH ₃ ↑ + 2HF ↑
In the PHT process, a small amount of N ₂ and H ₂ is also generated. Moreover, the COR process and the PHT process using the above-described chemical reaction have the following characteristics.
1) High thermal oxide film selectivity (removal rate) Specifically, the COR process and the PHT process have a high thermal oxide film selectivity, but a low silicon selectivity. Therefore, it is possible to efficiently remove foreign matters whose main component is a thermal oxide film.
2) The growth rate of the natural oxide film on the surface of the diffusion layer from which foreign matter has been removed is slow. Specifically, the surface of the diffusion layer from which the upper layer has been removed by COR processing and PHT processing is covered with hydrogen or fluorine (diffusion layer) Is terminated with hydrogen or fluorine), the surface is passivated and chemically stabilized. As a result, the growth of the natural oxide film on the surface is suppressed, and specifically, the growth time of the natural oxide film having a thickness of 3 mm is 2 hours or more. Therefore, an unnecessary oxide film is not generated in the manufacturing process of the semiconductor device, and the occurrence of poor conduction in the semiconductor device can be prevented and the reliability can be improved.
3) Reaction proceeds in a dry environment Specifically, water is not used in the COR process, and water generated by the COR process is also vaporized by the PHT process, so that the diffusion layer from which the upper layer is removed OH group is not arranged on the surface of Therefore, the surface of the diffusion layer does not become hydrophilic, and thus the surface does not absorb moisture, so that it is possible to prevent a reduction in wiring reliability of the semiconductor device.
4) The amount of product produced saturates after a predetermined time. Specifically, after a predetermined time has passed, the product is generated even if the diffusion layer is continuously exposed to a mixed gas of ammonia gas and hydrogen fluoride gas. The amount of product generated does not increase. Moreover, the production amount of the product is determined by parameters of the mixed gas such as the pressure of the mixed gas and the volume flow rate ratio. Therefore, the removal amount control of the oxide film on the diffusion layer can be easily performed.
5) Very few particles are generated.

  Specifically, in PM11, even when the oxide film on the wafer diffusion layer is removed from a large number of wafers, the adhesion of particles, which are the cause of the generation of foreign matters, is hardly observed on the inside of the side wall of the chamber 23 or the like. Therefore, no conduction failure occurs in the semiconductor device, and the reliability of the semiconductor device can be improved.

  As described above, in the CVD processing apparatus 10, before the CVD process for forming the Ti layer and the TiN layer is performed on the wafer, the COR process and the PHT process are performed on the wafer. As a result, foreign matter (oxide film) on the diffusion layer of the wafer can be removed without suppressing the generation of particles and cutting the polysilicon gate, thereby reliably suppressing the occurrence of poor conduction in semiconductor devices. can do.

  FIG. 2 is a perspective view showing a schematic configuration of the PM that performs COR processing on the wafer in FIG.

  In FIG. 2, a PM 11 contains a wafer, a chamber 23 that performs COR processing on the wafer, and a gas box 21 that is a gas supply device that supplies ammonia gas and hydrogen fluoride gas into a container 32 (to be described later) of the chamber 23. And an ECS power source 22 for applying a DC voltage to an electrode plate 35 of an ESC 33, which will be described later, as a wafer mounting table disposed in the container 32, and a variable butterfly valve for controlling the pressure in the container 32. An automatic pressure control valve (hereinafter referred to as “APC valve”) 24 and a turbo molecular pump (exhaust pump for vacuuming) that evacuates the inside of the container 32 through the APC valve 24 ( Turbo Molecular Pump (hereinafter referred to as “TMP”) 25 and a main exhaust pipe 26 connecting the TMP 25 and a DP (Dry Pump) 77 described later. A trap 27 that is disposed in the middle of the main exhaust pipe 26 and collects products in the exhaust; an ESC chiller 28 that supplies a coolant, for example, cooling water, at a predetermined temperature to a later-described refrigerant chamber 99 in the ESC 33; The module temperature control unit 29 that controls the temperature of the entire PM 11 and the MC (Module Controller) 101 to be described later that controls the operation of each component (21 to 29) of the PM 11 are provided. Each component (21 to 29) of the PM 11 is fixed to the frame 30 and is handled as one module.

  In the PM 11, the TMP 25, the APC valve 24, the chamber 23, and the gas box 21 are arranged in a substantially straight line with respect to the vertical direction in the drawing by the frame 30. Thereby, the magnitude | size of PM11 can be made small and arrangement | positioning of PM11 in the CVD processing apparatus 10 is made easy.

  The chamber 23 has a chamber lid (lid) 31 at the top, and a gauge (not shown) for monitoring the state inside the container 32 at the side. The opening / closing angle of the chamber lid 31 is 180 °, and maintenance of the chamber 23 is not hindered by an operator's maintenance work, for example, wet cleaning or replacement of parts in the chamber. Can be improved.

  FIG. 3 is a cross-sectional view showing a schematic configuration of the chamber in FIG.

In FIG. 3, the chamber 23 includes an aluminum cylindrical container 32, a columnar ESC 33 disposed below the container 32, and a shower head 34 disposed above the container 32. The ESC 33 has a structure in which an aluminum member, an Al ₂ O ₃ member, and an aluminum member are stacked from below in the drawing.

  The ESC 33 has an electrode plate 35 to which a DC voltage from the ECS power supply 22 is applied, and adsorbs the wafer by a Coulomb force or a Johnson-Rahbek force generated by the applied DC voltage. Hold. Further, the ESC 33 has an annular refrigerant chamber 99 extending in the circumferential direction, for example. A refrigerant of a predetermined temperature, for example, cooling water, is circulated and supplied from the ESC chiller 28 to the refrigerant chamber 99 via a refrigerant pipe (not shown), and the wafer W adsorbed and held on the upper surface of the ESC 33 by the temperature of the refrigerant. The processing temperature is controlled. Further, the ESC 33 has a heat transfer gas supply system (not shown) that uniformly supplies heat transfer gas (helium gas) between the upper surface of the ESC 33 and the back surface of the wafer. During the COR process, the heat transfer gas performs heat exchange between the wafer and the ESC 33 maintained at a desired designated temperature by the refrigerant, thereby cooling the wafer efficiently and uniformly.

  In the ESC 33, a plurality of lift pins 42 protrude from an upper surface (hereinafter referred to as “mounting surface”) on which the wafer is mounted. These lift pins 42 are components of the wafer lift device 80 described later, and project from the mounting surface in conjunction with the elevation of the pin holder 81, which is also a component of the wafer lift device 80, in the container 32, or embedded in the mounting surface. Enter. Specifically, the lift pins 42 protrude from the upper surface of the ESC 33 and move upward when the wafer embedded in the ESC 33 and carried out of the COR process when the wafer is sucked and held by the ESC 33 and unloaded from the container 32. lift.

  A counterbore 43 having a diameter larger than the diameter of the wafer by a predetermined value is applied to the mounting surface of the ESC 33 to form a wafer-type recess 43. Since the wafer is held in the wafer stop 43 during the COR process, the wafer does not move. Thereby, the COR processing can be performed more uniformly on the surface of the wafer.

  A predetermined surface treatment is performed on the inner surface of the container 32. Examples of the surface treatment to be applied include alumite coating treatment, OGF (Out Gas Free) alumite coating treatment, mechanical polishing, fluorine passivation treatment, and the like. The side surface of the container 32 may not be subjected to surface treatment, and aluminum may be exposed inside the container 32.

  Further, a wafer loading / unloading port 44 is provided inside the side wall of the container 32 at a position corresponding to the height of the wafer lifted upward from the ESC 33 by the lift pins 42, and a loading / unloading port 44 is disposed outside the side wall of the container 32. A gate valve 45 for opening and closing is attached. PM11 is connected to TM15 via the gate valve 45.

  The side wall of the container 32 and the gate valve 45 incorporate a heater (not shown), for example, a heating element, and prevent the ambient temperature in the container 32 and TM 15 from being lowered. Thereby, the reproducibility of the COR processing can be improved. The heating element in the side wall prevents the reaction by-product from adhering to the inside of the side wall by controlling the temperature of the side wall.

  The shower head 34 has a two-layer structure, and has a first buffer chamber 38 and a second buffer chamber 39 in each of the lower layer portion 36 and the upper layer portion 37. The first buffer chamber 38 and the second buffer chamber 39 communicate with the inside of the container 32 through gas vent holes 40 and 41, respectively. That is, the shower head 34 is composed of a plate-like body stacked in a layered manner having internal passages into the containers 32 for the gases supplied to the first buffer chamber 38 and the second buffer chamber 39, respectively.

  When performing the COR process on the wafer, a mixed gas containing ammonia gas is supplied to the first buffer chamber 38 from a mixing pipe 75 of an ammonia gas supply system 47 described later, and the supplied mixed gas passes through the gas vent 40. To be supplied into the container 32. In addition, a mixed gas containing hydrogen fluoride gas is supplied to the second buffer chamber 39 from a mixing pipe 62 of a hydrogen fluoride gas supply system 46 described later, and the supplied mixed gas passes through the gas vent hole 41. It is supplied into the container 32. The shower head 34 incorporates a heater (not shown), for example, a heating element. This heating element is preferably arranged on the upper layer portion 37 to control the temperature of the mixed gas containing the hydrogen fluoride gas in the second buffer chamber 39.

  In this chamber 23, the pressure in the container 32 and the volume flow ratio of ammonia gas and hydrogen fluoride gas are adjusted, and the COR process is performed on the wafer under appropriate conditions. The chamber 23 is designed so that a mixed gas containing ammonia gas and a mixed gas containing hydrogen fluoride gas are mixed in the container 32 for the first time (postmix design). Until the mixed gas is introduced, the two kinds of mixed gases can be prevented from being mixed, and the hydrogen fluoride gas and the ammonia gas can be prevented from reacting before being introduced into the container 32. .

  FIG. 4 is a piping diagram showing a gas supply system of the gas box in FIG.

  In FIG. 4, the gas box 21 includes a hydrogen fluoride gas supply system 46 and an ammonia gas supply system 47.

The hydrogen fluoride gas supply system 46 has introduction pipes 48, 49, and 50 for introducing hydrogen fluoride gas, nitrogen (N ₂ ) gas, and argon gas from the outside of the gas box 21, respectively. The introduction pipe 48 branches into branch pipes 51 and 52, and the branch pipes 51 and 52 have MFCs (Mass Flow Controllers) 53 and 54, respectively. The introduction pipe 49 branches into branch pipes 55 and 56, and the branch pipes 55 and 56 are connected to the branch pipes 51 and 52, respectively. Therefore, hydrogen fluoride gas and nitrogen gas are mixed in the branch pipes 51 and 52. The MFCs 53 and 54 control the flow rate of the mixed gas of hydrogen fluoride gas and nitrogen gas. The introduction pipe 50 is branched into branch pipes 57 and 58, and the branch pipes 57 and 58 have MFCs 59 and 60, respectively. The MFCs 59 and 60 control the flow rate of argon gas. In addition, the branch pipes 55 and 56 which do not have MFC have an orifice, and adjust the quantity of flowing gas.

  The branch pipes 51, 52, 57 and 58 are connected to the mixing pipe 62. Therefore, argon gas is further mixed with the mixed gas of hydrogen fluoride gas and nitrogen gas in the mixing tube 62. The mixing tube 62 communicates with the second buffer chamber 39 in the upper layer portion 37 of the shower head 34 and supplies a mixed gas of hydrogen fluoride gas, nitrogen gas, and argon gas to the second buffer chamber 39.

  Each branch pipe 51, 52, 55 to 58 is connected directly or indirectly to a vacuum drawing pipe (back line) 61. The vacuum tube 61 is connected to the TMP 25 (see FIG. 5). Accordingly, the branch pipes 51, 52, 55 to 58 can be evacuated by the TMP 25. For example, before the COR processing is performed on the wafer, the branch pipes 51, 52, 55 to 58 are evacuated to be contained in the pipes. Residual gas is removed.

  In the hydrogen fluoride gas supply system 46, hydrogen fluoride gas, nitrogen gas, and argon gas are mixed at a predetermined mixing ratio by controlling the flow rate using the MFCs 53, 54, 59, 60 and evacuating the branch pipes 51, 52, 55-58. Mixing can be performed accurately, and thus the amount of product produced in the COR process can be accurately controlled.

  In general, since hydrogen fluoride gas is liable to be liquefied by adiabatic expansion, the hydrogen fluoride gas supply system 46 may be liquefied in the vicinity of the MFCs 53 and 54. In the present embodiment, in response to this, the pipe through which the hydrogen fluoride gas flows, that is, the introduction pipe 48, the branch pipes 51 and 52, a part of the branch pipes 55 and 56, and the mixing pipe 62 are indicated by a wavy line in the figure. Covered by the heater 63 shown. The heater 63 maintains the temperature in each tube at a temperature equal to or higher than the boiling point of hydrogen fluoride, specifically, 40 ° C. or higher, preferably 60 ° C. Thereby, liquefaction of hydrogen fluoride in the hydrogen fluoride gas supply system 46 can be reliably prevented.

  In the hydrogen fluoride gas supply system 46, each pipe has a valve, and the opening and closing of these valves is controlled by the MC 101. Thereby, the flow path of each gas can be changed.

  The ammonia gas supply system 47 has introduction pipes 64 and 65 for introducing ammonia gas and nitrogen gas from the outside of the gas box 21, respectively. The introduction pipe 64 branches into branch pipes 66 and 67, and the branch pipes 66 and 67 have MFCs 68 and 69, respectively. The introduction pipe 65 is branched into branch pipes 70 to 73, and the branch pipes 70 and 71 are connected to the branch pipes 66 and 67, respectively. Therefore, ammonia gas and nitrogen gas are mixed in the branch pipes 66 and 67. The MFCs 68 and 69 control the flow rate of the mixed gas of ammonia gas and nitrogen gas. The branch pipe 72 has an MFC 74, and the branch pipes 70, 71, 73 each have an orifice. The MFC 74 controls the flow rate of nitrogen gas. The orifices of the branch pipes 70, 71, 73 adjust the amount of flowing gas.

  The branch pipes 66, 67, 72 and 73 are connected to the mixing pipe 75. The mixing tube 75 communicates with the first buffer chamber 38 in the lower layer portion 36 of the shower head 34 and supplies a mixed gas of ammonia gas and nitrogen gas to the first buffer chamber 38.

  Further, each branch pipe 66, 67, 70, 71 is connected to the vacuum drawing pipe 76 directly or indirectly. The evacuation tube 76 is also connected to the TMP 25 in the same manner as the evacuation tube 61 of the hydrogen fluoride gas supply system 46 (see FIG. 5). Accordingly, the branch pipes 66, 67, 70, 71 can be evacuated by the TMP 25. For example, before the COR processing is performed on the wafer, the branch pipes 66, 67, 70, 71 are evacuated, Residual gas is removed.

  In the ammonia gas supply system 46, the ammonia gas and the nitrogen gas can be accurately mixed at a predetermined mixing ratio by the flow rate control by the MFCs 68, 69, 74 and the evacuation of the branch pipes 66, 67, 70, 71. The amount of product produced in the COR process can be accurately controlled.

  In the ammonia gas supply system 47, each pipe has a valve, and the opening and closing of these valves is controlled by the MC 101. Thereby, the flow path of each gas can be changed.

  FIG. 5 is a piping diagram showing an exhaust system in the PM of FIG.

  In FIG. 5, the exhaust pipe 26 communicates with the inside of the container 32 and sequentially connects the APC valve 24, the TMP 25, the trap 27, and the DP 77 that is an exhaust pump. Further, the main exhaust pipe 26 branches into a bypass pipe 78 between the chamber 23 and the APC valve 24. The bypass pipe 78 bypasses the APC valve 24, the TMP 25, and the trap 27, and joins the main exhaust pipe 26 between the trap 27 and the DP 77.

  When roughing the inside of the container 32 or the like, the exhaust gas is exhausted only by the DP 77 by flowing the exhaust gas only through the bypass pipe 78. When evacuating the inside of the container 32 or the like, the exhaust gas is exhausted through the TMP 25 and DP 77 by flowing the exhaust gas through the main exhaust pipe 26, and the pressure inside the container 32 is controlled by the APC valve 24 disposed in the main exhaust pipe 26.

  The TMP 25 is connected to the evacuation pipes 61 and 76 of the hydrogen fluoride gas supply system 46 and the ammonia gas supply system 47 and evacuates the branch pipes 51, 52, 55 to 58, 66, 67, 70 and 71. The TMP 25 is also connected to a heat transfer gas supply system and evacuates the heat transfer gas supply system. The heat transfer gas supply system is connected to the main exhaust pipe 26 between the TMP 25 and the trap 27 and roughed by the DP 77.

  The trap 27 is cooled by the refrigerant supplied from the outside, and solidifies and collects the product (biprocess) in the exhaust. Thereby, it is possible to prevent the product from flowing out of the CVD processing apparatus 10, and thus it is possible to reliably protect the environment.

  In general, the product in the exhaust gas is liable to be liquefied when the temperature is low, and the liquefied product is deposited in each pipe as a deposition and obstructs the flow of the exhaust gas. In the present embodiment, in response to this, the pipe through which the exhaust from the container 32 flows, that is, the main exhaust pipe 26 and the bypass pipe 78 are covered with a heater 79 indicated by a wavy line in the drawing. Thereby, liquefaction of the product in the exhaust can be surely prevented.

  In this exhaust system, each pipe has a valve, and the opening and closing of these valves is controlled by the MC 101. As a result, the exhaust flow path (the main exhaust pipe 26 and the bypass pipe 78) can be changed.

  6 is a diagram showing a schematic configuration of a wafer lift device disposed in the chamber of FIG. 3, (A) is a plan view of the same device as viewed in the direction of arrow A in FIG. 3, and (B) is (A). It is sectional drawing in alignment with line BB in FIG.

  6A and 6B, a wafer lift device 80 (substrate lift device) includes an annular pin holder 81 (lifting member) disposed so as to surround the ESC 33 in the container 32, and the circumference of the pin holder 81. Three lift arms 83 (interlocking members) that are equally disposed along the direction and are connected to the pin holder 81 via three lift pin protrusion amount adjusters 82 (protrusion amount adjusting mechanisms) described later, and the lift arms 83 And three lift pins 42, which are round bar-like members, inserted into lift pin holes described later. Here, since the pin holder 81, the lift pin protrusion amount adjuster 82, the lift arm 83, and the lift pins 42, which are the components of the wafer lift device 80, are all disposed in the container 32, the wafer lift device 80 is disposed in the container 32 as a result. Is arranged.

  The pin holder 81 moves up and down due to a linear motion generated by converting a rotational motion of a motor (not shown) by a ball screw, that is, moves up and down in FIG. The ball screw and the motor are arranged outside the chamber 23, that is, on the atmosphere side. The linear motion generated by the ball screw and the motor is transmitted to a support member (not shown) that supports the pin holder 81, and the support member moves the pin holder 81 up and down. Therefore, a hole (not shown) for the support member communicates the atmosphere and the inside of the container 32, but the support member and the hole for the support member are covered with a bellows cover or the like. Thereby, the inside of the container 32 is sealed from the atmosphere without using grease.

  The lift arm 83 is an arm-shaped member, and has a through hole 97 (see FIG. 8) through which a screw for fastening the lift arm 83 to the lift pin protrusion amount adjuster 82 passes at one end, and a lower end of the lift pin 42 at the other end. And has a lift pin hole for receiving and carrying. Since the diameter of the lift pin hole is larger than the diameter of the lift pin 42 by a predetermined value, the lift pin hole is loosely coupled to the lower end of the lift pin 42. That is, the lift pin 42 is placed on the other end of the lift arm 83 substantially. The lift arm 83 is interposed between the pin holder 81 and the lift pin 42 to interlock the pin holder 81 and the lift pin 42. Therefore, the lift arm 83 moves up and down as the pin holder 81 moves up and down and raises and lowers the lift pin 42.

  Further, the three lift arms 83 project toward the center of the pin holder 81, and a part (the other end side) of the lift arms 83 is lift arm accommodation grooves 84 (perforated along the ascending / descending direction of the lift arm 83 on the side surface of the ESC 33). Is housed in the interlocking member housing groove). The lift arm accommodating groove 84 is formed corresponding to each lift arm 83, and the opening length of the lift arm 83 in the lifting direction is equal to or greater than the lifting range of the lift arm 83. Therefore, the lift arm 83 can freely move up and down in the lift arm accommodation groove 84.

  The ESC 33 has a lift pin accommodation hole 85 that communicates with the lift arm accommodation groove 84 at a position facing the lift pin hole of the lift arm 83 accommodated in the lift arm accommodation groove 84 and opens on the mounting surface of the ESC 33. The lift pin accommodation hole 85 is a circular hole and is provided corresponding to each lift arm 83. Further, the diameter of the lift pin accommodation hole 85 is larger than the diameter of the lift pin 42 by a predetermined value. Therefore, the lift pin accommodation hole 85 can accommodate the lift pin 42.

  The lift pin 42 is inserted into the lift pin hole of the lift arm 83 through the lift pin accommodation hole 85 from the mounting surface. Therefore, the lift pin 42 and the lift arm 83 are loosely coupled in the lift arm accommodating groove 84, and the lift pin 42 protrudes from or is embedded in conjunction with the lifting and lowering of the lift arm 83, that is, the pin holder 81.

  According to the wafer lift device 80, the wafer lift device 80 is disposed in the container 32 of the PM 11, and a lift pin 42 and an interlocking member that interlocks with the pin holder 81 that moves the lift pin 42 around the ESC 33 are connected to the pin holder 81 in the ESC 33. The lift pin 42 is loosely coupled in a lift arm receiving groove 84 drilled along the ascending / descending direction, and the lift pin 42 is received in a lift pin receiving hole 85 that communicates with the lift arm receiving groove 84 and opens on the mounting surface of the ESC 33. Therefore, it is not necessary to provide a lift pin accommodation hole for communicating the inside of the container 32 and the atmosphere in the ESC 33, and the necessity of using grease can be eliminated. Therefore, when the wafer is subjected to the CVD process, it is possible to prevent film formation defects from occurring on the wafer. Further, the lift pins 42 can freely protrude on the mounting surface, and thus the wafer can be stably lifted on the mounting surface.

  In the wafer lift device 80, the amount of protrusion of the three lift pins 42 from the mounting surface is determined by the pin holder 81. Therefore, when the pin holder 81 is inclined, the amount of protrusion of the three lift pins 42 becomes uneven, and the wafer is removed. There is a possibility that it cannot be lifted stably. Correspondingly, the wafer lift device 80 includes a lift pin protrusion amount adjuster 82 described below.

  7 is a diagram showing a schematic configuration of the lift pin protrusion amount adjuster in FIG. 6, (A) is an exploded perspective view, and (B) is an enlarged perspective view of a height adjusting block in the lift pin protrusion amount adjuster. .

  7A and 7B, the lift pin protrusion amount adjuster 82 includes a height adjusting block 86 (block material), a block fixing nut 87 (nut member), and a block angle fixing washer 88 (rotation restricting member). ), A flat washer 89, a spring washer 90, and a height restricting bolt 91 (height restricting member).

  The height adjusting block 86 is a quadrangular columnar member, and a male screw is formed at each corner of the side surface. Further, a screw hole 92 into which a bolt 98 for fastening the lift arm 83 to the lift pin protrusion amount adjuster 82 is screwed is formed on the upper surface of the height adjusting block 86, and a height restriction is formed on the lower surface of the height adjusting block 86. A screw hole 95 (see FIG. 8) into which the bolt 91 is screwed is formed.

  The block fixing nut 87 has a female screw that is screwed into the male screw of the height adjusting block 86. The inner peripheral shape of the block angle fixing washer 88 is a square having sides facing the four side surfaces of the height adjusting block 86, and the outer peripheral shape is determined by the width of the block angle fixing washer system stop groove 93 of the pin holder 81 described later. It is a substantially square with a small width only.

  The pin holder 81 has a block angle fixing washer system stop groove 93 and a height adjusting block receiving hole 94 at a position where each lift pin protrusion amount adjuster 82 is disposed. The block angle fixing washer system stop groove 93 is a shallow groove formed on the surface of the pin holder 81 from the outer periphery to the inner periphery of the pin holder 81 and has a uniform width from the outer periphery to the inner periphery. Further, the width of the block angle fixing washer system stop groove 93 is larger by a predetermined value than the width of the square formed by the outer shape of the block angle fixing washer 88. The height adjusting block receiving hole 94 is a bottomed cylindrical hole provided in the bottom of the block angle fixing washer system stop groove 93, and the diameter thereof is effective for the male screw of the height adjusting block 86. It is larger than the diameter by a predetermined value. Further, a through hole 96 (see FIG. 8) through which the height regulating bolt 91 can pass is provided at the bottom of the height adjusting block accommodating hole 94.

  FIG. 8 is a process diagram showing a lift pin protrusion amount adjusting method using the lift pin protrusion amount adjuster of FIG. This method is applied to all three lift pin protrusion amount adjusters 82 of the wafer lift device 80, but only one lift pin protrusion amount adjuster 82 will be described below.

  First, the lower portion of the height adjustment block 86 is accommodated in the height adjustment block accommodation hole 94 of the pin holder 81, and the height regulating bolt 91 is interposed from below in the figure of the pin holder 81 so as to sandwich the flat washer 89 and the spring washer 90. Is inserted into the through hole 96 at the bottom of the height adjusting block accommodating hole 94 (FIG. 8A).

  Next, the screw hole 95 on the lower surface of the height adjusting block 86 and the height regulating bolt 91 are screwed together. At this time, the screwing amount is adjusted so that the distance from the head of the height regulating bolt 91 to the height adjusting block 86 corresponds to the desired protruding amount of the lift pin. Thereafter, the block angle fixing washer 88 is loosely coupled to the height adjusting block 86 (FIG. 8B), and the block angle fixing washer 88 is lowered as it is in the drawing, and the block angle fixing washer 88 is moved to the block angle. The fixed washer system stop groove 93 is accommodated. At this time, even if the block angle fixing washer 88 attempts to rotate in the block angle fixing washer system stop groove 93, the side wall of the block angle fixing washer system stop groove 93 comes into contact with any side of the outer periphery of the block angle fixing washer 88. Therefore, the block angle fixing washer 88 does not rotate in the block angle fixing washer system stop groove 93. That is, the block angle fixed washer system stop groove 93 stops the block angle fixed washer 88.

  Next, the block fixing nut 87 is screwed into the height adjusting block 86. At this time, the height adjusting block 86 also tries to rotate by the tightening torque of the block fixing nut 87. However, each side surface of the height adjusting block 86 comes into contact with each side on the inner periphery of the block angle fixing washer 88. Further, since the block angle fixing washer 88 is stopped by the block angle fixing washer system stop groove 93 as described above, the height adjusting block 86 does not rotate. That is, the block angle fixing washer 88 restricts the rotation of the height adjusting block 86 with respect to the pin holder 81 (FIG. 8C). Therefore, even if the block fixing nut 87 is screwed to the height adjusting block 86, the height adjusting block 86 does not rotate, so the distance from the head of the height regulating bolt 91 to the height adjusting block 86. Will not change.

  Thereafter, when the block fixing nut 87 is seated on the pin holder 81 via the block angle fixing washer 88, the reaction force (upward force in the figure) received by the block fixing nut 87 from the pin holder 81 is the height adjusting block 86. The head of the height regulation bolt 91 is seated on the lower surface of the pin holder 81 via the flat washer 89 and the spring washer 90, and the height adjusting block 86 is moved to the height regulation bolt 91. And it is fixed to the pin holder 81 via the block fixing nut 87 (FIG. 8D). At this time, the height of the height adjusting block 86 from the pin holder 81 is regulated by the distance from the head of the height regulating bolt 91 to the height adjusting block 86. Therefore, the height of the height adjusting block 86 from the pin holder 81 can be adjusted by adjusting the distance from the head of the height regulating bolt 91 to the height adjusting block 86.

  Next, the bolt 98 is screwed into the screw hole 92 of the height adjusting block 86 through the through hole 97 at one end of the lift arm 83 (FIG. 8E).

  The head of the bolt 98 is seated on the lift arm 83 and the lift arm 83 is fastened to the lift pin protrusion amount adjuster 82. Thereafter, the lower end of the lift pin 42 is inserted into the lift pin hole at the other end of the lift arm 83 (FIG. 8F). At this time, the amount of protrusion of the lift pin 42 from the placement surface is regulated by the position of the lift arm 83, that is, the height of the height adjustment block 86 from the pin holder 81, so the protrusion of the lift pin 42 from the placement surface. The amount can be adjusted by adjusting the distance from the head of the restriction bolt 91 to the height adjustment block 86.

  According to the lift pin protrusion amount adjuster 82, a height adjusting block 86 which is a quadrangular columnar member which is connected to the lift arm 83 and has a male screw formed at each corner of the side surface, and the height adjusting block 86. A height regulating bolt 91 that regulates the height from the pin holder 81, a block fixing nut 87 that is screwed onto a male screw of the height adjusting block 86 and is seated on the pin holder 81, and a height adjusting block 86 Since it has a block angle fixing washer 88 that restricts rotation with respect to the pin holder 81, the block fixing nut 87 is screwed into the male screw of the height adjusting block 86 while the block fixing nut 87 is screwed into the pin holder 81. When the seat is seated, the rotation of the height adjustment block 86 is restricted and the height of the height adjustment block 86 from the pin holder 81 is changed. Therefore, the height adjustment block 86 can be fixed to the pin holder 81 without any problem, so that the height of the lift arm 83 from the pin holder 81 can be easily and reliably pulled. Can be adjusted.

  Further, since the wafer lift device 80 has a lift pin protrusion amount adjuster 82 that can adjust the protrusion amount of the lift pins 42 from the mounting surface on the pin holder 81, that is, around the ESC 33, the mounting surface of each lift pin 42 is provided. By adjusting the amount of protrusion from the wafer, it is possible to lift the wafer more stably on the mounting surface, and to eliminate the need to squeeze the ESC 33 greatly in order to dispose the lift pin protrusion amount adjuster directly below the ESC 33. Therefore, the coolant chamber 99 and the electrode plate 35 are built in the ESC 33, and the wafer can be stably subjected to COR processing.

  In addition to the chamber described above, the PM 12 in the CVD processing apparatus 10 of FIG. 1 is disposed in the chamber and a PHT chamber lid (not shown) as an openable / closable lid that shuts off the inside of the chamber and the external atmosphere. And a stage (not shown) as a mounting table on which the wafer is mounted.

  The PHT chamber lid is provided with a silicon rubber seat heater. Further, a cartridge heater (not shown) is built in the side wall of the chamber, and the cartridge heater controls the wall surface temperature of the side wall of the chamber to 25 to 80 ° C. This prevents reaction by-products from adhering to the side walls of the chamber, thereby preventing generation of particles due to the attached reaction by-products and extending the chamber cleaning cycle.

  Further, a stage heater is disposed on the stage, and the stage heater directly heats the wafer placed on the stage to 100 to 200 ° C., preferably about 135 ° C., for at least 1 minute. In addition, the outer periphery of the chamber of PM12 is covered with a heat shield.

  FIG. 9 is a diagram showing a schematic configuration of a system controller in the CVD processing apparatus of FIG.

  9, the system controller includes an EC (Equipment Controller) 100, a plurality of, for example, three MCs 101, 102, and 103, and a switching hub 104 that connects the EC 100 and the MCs 101, 102, and 103. The system controller is connected from the EC 100 via a LAN (Local Area Network) 105 to a PC 106 as a MES (Manufacturing Execution System) that manages the manufacturing process of the entire factory where the CVD processing apparatus 10 is installed. The MES cooperates with the system controller to feed back real-time information relating to processes in the factory to a core business system (not shown) and makes a determination relating to the process in consideration of the load of the entire factory.

  The EC 100 is a general control unit that controls the entire operation of the CVD processing apparatus 10 by controlling the MCs 101, 102, and 103. The EC 100 has a CPU, RAM, HDD, and the like, and the CPU transmits a control signal to the MCs 101, 102, and 103 in accordance with a menu of wafer processing methods designated by the user, that is, a program corresponding to the recipe. By doing so, the operations of PM11-14, TM15, LM16, etc. are controlled.

  The switching hub 104 switches the MC as a connection destination of the EC 100 according to a control signal from the EC 100.

  MC101,102,103 is a control part which controls operation | movement of PM11-14, TM15, LM16 grade | etc.,. The MCs 101, 102, and 103 also have a CPU, RAM, HDD, and the like, and transmit control signals to end devices that will be described later. The system controller included in the CVD processing apparatus 10 has a number of MCs corresponding to the number of modules in order to control each module of the CVD processing apparatus 10, but FIG. 9 shows three MCs.

  The MCs 101, 102, and 103 are connected to the respective I / O (input / output) modules 109, 110, and 111 via the GHOST network 108 by a DIST (Distribution) board 107. The GHOST network 108 is a network realized by an LSI called GHOST (General High-Speed Optimum Scalable Transceiver) mounted on the MC board of the MC. A maximum of 31 I / O modules can be connected to the GHOST network 108. In the GHOST network 108, the MC corresponds to the master and the I / O module corresponds to the slave.

  The I / O module 109 includes a plurality of I / O units 112 connected to each component of the PM 11 (hereinafter referred to as “end device”), and includes a control signal to each end device and an output from each end device. Transmits signals. The end device connected to the I / O unit 112 in the I / O module 109 includes, for example, the gas box 21, the ECS power source 22, the APC valve 24, the TMP 25, the DP 77, and further the components of the PM 11. The hydrogen fluoride gas supply system 46, the ammonia gas supply system 47, the valves in the exhaust system, and the like are applicable.

  The I / O modules 110 and 111 have the same configuration as that of the I / O module 109, and thus description thereof is omitted.

  Each GHOST network 108 is also connected to an I / O board (not shown) that controls input / output of digital signals, analog signals, and serial signals in the I / O unit 112.

  When the COR processing is performed in the CVD processing apparatus 10, the CPU of the EC 100 performs the I / O unit 112 in the switching hub 104, MC 101, GHOST network 108, and I / O module 109 according to a program corresponding to the processing. The COR process is executed in the PM 11 by transmitting a control signal to each end device of the PM 11 via.

  In the system controller of FIG. 9, a plurality of end devices are not directly connected to the EC 100, but the I / O unit 112 connected to the plurality of end devices is modularized to form an I / O module. Since the / O module is connected to the EC 100 via the MCs 101, 102, 103 and the switching hub 104, the communication system can be simplified.

  Further, the control signal transmitted by the CPU of the EC 100 includes the address of the I / O unit 112 connected to the desired end device and the address of the I / O module including the I / O unit 112. The switching hub 104 refers to the address of the I / O module in the control signal, and the GHOST of the MCs 101, 102, and 103 refers to the address of the I / O unit 112 in the control signal, so that the switching hub 104 and the MCs 101, 102, 103 can eliminate the necessity of inquiring the CPU about the transmission destination of the control signal, thereby realizing smooth transmission of the control signal.

  Further, the MC 101 monitors the PM 11 via the I / O unit 112 in the GHOST network 108 and the I / O module 109 in the COR processing, and when a predetermined error condition is detected, the MC 101 performs subsequent wafer transfer to the PM 11. An interlock (I / L) signal is transmitted to the EC 100 via the switching hub 104 for notifying that the carry-in is prohibited. The EC 100 that has received the interlock signal transmits, via the switching hub 104, a wafer loading prohibition signal that prohibits wafer loading to the MC (MC 103 in the figure) that controls the operation of the TM 15. The MC 103 that has received the wafer carry-in prohibition signal controls the operation of the end device related to the wafer carry-in, and stops the wafer carry-in to the PM 11.

  As described above, the PM 11 includes three lift pins 42, but the number of lift pins 42 is not limited to this, and four or more are preferable. Thereby, the wafer can be lifted more stably.

  The PM provided with the wafer lift device 80 is not limited to the PM that performs the COR processing on the wafer, and may be any PM that performs any processing.

  The height adjustment block 86 is a quadrangular columnar member, but the shape of the height adjustment block 86 is not limited to this, and may be at least a polygonal column shape. At this time, it goes without saying that the inner peripheral shape of the block angle fixing washer 88 is changed to a polygonal shape corresponding to the shape of the height adjusting block 86.

  Next, a substrate processing apparatus according to a second embodiment of the present invention will be described.

  This embodiment is basically the same in configuration and operation as the above-described first embodiment, and only the structure of the wafer lift apparatus is different from the above-described first embodiment. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 10 is a diagram showing a schematic configuration of a wafer lift apparatus disposed in a PM chamber as a substrate processing apparatus according to the present embodiment, (A) is a plan view of the apparatus, and (B) It is sectional drawing which follows the line CC in (A).

  10A and 10B, a wafer lift device 120 (substrate lift device) includes an annular pin holder 121 (elevating member) disposed so as to surround the ESC 113 in a chamber container, and a circle of the pin holder 121. Three lift arms 123 (interlocking members) that are equally disposed along the circumferential direction and are connected to the pin holder 121 via three lift pin protrusion amount adjusters 122 (protrusion amount adjusting mechanisms) described later, and each lift arm 123, and three lift pins 42, which are round bar-like members, placed on 123. Here, since all of the pin holder 121, the lift pin protrusion amount adjuster 122, the lift arm 123, and the lift pin 42 which are components of the wafer lift device 120 are disposed in the container, as a result, the wafer lift device 120 is disposed in the container. Has been.

  The pin holder 121 moves in the vertical direction in FIG. The lift arm 123 is an arm-shaped member, and has an end 123a having a through hole 123b (see FIG. 11) through which an adjuster assembly bolt 127 for fastening the lift arm 123 to the lift pin protrusion amount adjuster 122 passes. The lower end of the lift pin 42 is placed on the part. Further, the end 123a of the lift arm 123 has a quadrangular shape in plan view, and each corner of the quadrangular shape is chamfered. The lift arm 123 is interposed between the pin holder 121 and the lift pin 42 to interlock the pin holder 121 and the lift pin 42. Therefore, the lift arm 123 moves up and down as the pin holder 121 moves up and down and raises and lowers the lift pin 42.

  Further, the three lift arms 123 project toward the center of the pin holder 121, and a part (the other end) of the lift arms 123 is formed in the side surface of the ESC 113 along the lift arm 123 ascending / descending direction. It is accommodated in (interlocking member accommodation groove). The lift arm accommodation groove 124 is formed corresponding to each lift arm 123, and the opening length of the lift arm 123 in the lifting direction is equal to or greater than the lifting range of the lift arm 123. Therefore, the lift arm 123 can freely move up and down in the lift arm receiving groove 124.

  The ESC 113 has a lift pin accommodation hole 125 that communicates with the lift arm accommodation groove 124 at a position facing the other end of the lift arm 123 accommodated in the lift arm accommodation groove 124 and opens on the mounting surface of the ESC 113. . The lift pin accommodation hole 125 is a circular hole and is provided corresponding to each lift arm 123. Further, the diameter of the lift pin accommodation hole 125 is larger than the diameter of the lift pin 42 by a predetermined value. Therefore, the lift pin accommodation hole 125 can accommodate the lift pin 42.

  The lift pin 42 is placed on the other end of the lift arm 123 from the placement surface via the lift pin accommodation hole 125. Therefore, the lift pin 42 protrudes or is embedded from the placement surface in conjunction with the lifting and lowering of the lift arm 123, that is, the pin holder 121.

  FIG. 11 is an exploded perspective view showing a schematic configuration of the lift pin protrusion amount adjuster in FIG. 10.

  In FIG. 11, the lift pin protrusion amount adjuster 122 includes a height adjustment boss member 126 (height adjustment member), an adjuster assembly bolt 127, a lift arm rotation stopper 128 (rotation restriction member), and flat washers 129 and 130. Two rotation stopper bolts 131 and an assembly bolt washer 132 are provided.

  The height adjusting boss member 126 is a bolt member having an upper portion made of an octagonal prism and a lower portion made of a screw, and has a through hole 133 coaxial with the central axis. The inner diameter of the through hole 133 is larger than the diameter of the threaded portion of the adjuster assembly bolt 127 by a predetermined value.

  The lift arm rotation stopper 128 has a stopper wall portion 128a that has an L shape in the direction of arrow B, and a protruding portion 128b that protrudes perpendicularly to the direction of arrow B from the lower portion of the stopper wall portion 128a. The L-shape of the stopper wall 128a is adapted to the square shape of the end 123a of the lift arm 123. That is, the stopper wall portion 128a and the end portion 123a are in a complementary relationship in the direction of arrow B. Further, each L-shaped side of the stopper wall portion 128 a comes into contact with two side surfaces of the side surfaces of the octagonal column portion of the height adjusting boss member 126. That is, the upper shape (octagonal column shape) of the height adjustment boss member 126 engages with the L-shape of the stopper wall portion 128a. The protrusion 128b has two through holes 128c. The inner diameter of the through hole 128c is larger than the diameter of the thread portion of the rotation stopper bolt 131 by a predetermined value.

  The adjuster assembly bolt 127 cooperates with the assembly bolt washer 132 to fasten the washer 129, the lift arm 123, the height adjusting boss member 126, the pin holder 121, and the washer 130 to each other. The length of the threaded portion of the adjuster assembly bolt 127 is longer than the total thickness of the washer 129, lift arm 123, height adjustment boss member 126, pin holder 121, and washer 130.

  The pin holder 121 has a boss member screw hole 121a and two screw holes 121b for the rotation stopper bolt 131 at a position where each lift pin protrusion amount adjuster 122 is disposed. The boss member screw hole 121a is screwed with the screw portion of the height adjusting boss member 126. Each screw hole 121b is screwed with a threaded portion of the rotation stopper bolt 131.

  12 is a process diagram showing a lift pin protrusion amount adjusting method using the lift pin protrusion amount adjuster of FIG. This method is applied to all three lift pin protrusion amount adjusters 122 of the wafer lift device 120. Hereinafter, only one lift pin protrusion amount adjuster 122 will be described.

  First, the height adjustment boss member 126 is connected to the pin holder 121 by screwing the boss member screw hole 121a and the thread portion of the height adjustment boss member 126 together. At this time, the protruding amount of the height adjusting boss member 126 from the pin holder 121 is adjusted by the screwing amount between the boss member screw hole 121 a and the screw portion of the height adjusting boss member 126. Then, the end 123a of the lift arm 123 and the washer 129 are placed on the connected height adjusting boss member 126, and the boss member screw hole 121a, the through hole 133, the through hole 123b, and the washer 129 are formed. Place on a straight line. Next, the screw portion of the adjuster assembly bolt 127 is inserted into the hole of the washer 129, the through hole 123b, the through hole 133, and the screw hole 121a for the boss member from above (FIG. 12A).

  Thereafter, the washer 130 is loosely coupled to the threaded portion of the adjuster assembly bolt 127 protruding from the back surface of the pin holder 121, and the assembly bolt washer 132 is threadedly engaged with the threaded portion (FIG. 12C).

  Next, the rotation stopper bolt 131 is inserted into each through hole 128 c in the protrusion 128 b of the lift arm rotation stopper 128, and the screw portion of the rotation stopper bolt 131 protruding from the back surface of the protrusion 128 b is inserted into the screw hole 121 b of the pin holder 121. Screw together. Thereby, the lift arm rotation stopper 128 is fastened to the pin holder 121. Further, at this time, the two L-shaped sides of the stopper wall 128 a are in contact with two of the two sides of the end 123 a of the lift arm 123 and the side of the octagonal column of the height adjustment boss member 126. Touch. Thereafter, the adjuster assembly bolt 127 is tightened with a torque wrench (not shown) or the like, and the washer 129, the lift arm 123, the height adjusting boss member 126, the pin holder 121, and the washer 130 are fastened together. At this time, the tightening torque of the adjuster assembly bolt 127 is transmitted to the lift arm 123 and the height adjustment boss member 126, and the lift arm 123 and the height adjustment boss member 126 attempt to rotate around the axis of the adjuster assembly bolt 127. To do. However, as described above, the two L-shaped sides of the stopper wall portion 128 a of the lift arm rotation stopper 128 are the two rectangular sides of the end portion 123 a of the lift arm 123 and the octagonal column portion of the height adjusting boss member 126. Therefore, the lift arm 123 and the height adjusting boss member 126 do not rotate. That is, the lift arm rotation stopper 128 restricts the rotation of the lift arm 123 and the height adjusting boss member 126 with respect to the pin holder 121 (FIG. 12C).

  Thereafter, the lower end of the lift pin 42 is placed on the other end of the lift arm 123 (FIG. 12D). At this time, the amount of protrusion of the lift pin 42 from the mounting surface is regulated by the height of the lift arm 123 from the pin holder 121, that is, the amount of protrusion of the height adjusting boss member 126 from the pin holder 121. The amount of protrusion from the mounting surface is the amount of protrusion of the height adjusting boss member 126 from the pin holder 121, and by extension, the amount of screwing between the boss member screw hole 121 a and the screw portion of the height adjusting boss member 126. It can be adjusted by adjusting.

  According to the lift pin protrusion amount adjuster 122, a lift arm rotation stopper 128 having a stopper wall 128a that is fastened to the pin holder 121 and has an L-shape that is complementary to the square shape of the end 123a of the lift arm 123; The height adjusting boss member 126 connected to the pin holder 121 and mounting the end 123a of the lift arm 123, and the adjuster assembly bolt 127 for fastening the lift arm 123, the height adjusting boss member 126 and the pin holder 121 to each other. The height adjustment boss member 126 is connected to the pin holder 121, the end 123a of the lift arm 123 is placed on the height adjustment boss member 126, and the lift arm 123 is adjusted by the adjuster assembly bolt 127. The boss member 126 for height adjustment and the pin holder 121 are mutually connected. When to be fastened to, it is possible to restrict the rotation relative to the pin holder 121 of the lift arm 123. Further, by adjusting the protrusion amount of the height adjustment boss member 126 from the pin holder 121 (the screw engagement amount between the boss member screw hole 121a and the screw portion of the height adjustment boss member 126), the pin holder of the lift arm 123 is adjusted. The height from 121 can be adjusted. As a result, the amount of protrusion of the lift pin 42 from the mounting surface can be adjusted easily and reliably.

  Further, since the two L-shaped sides of the stopper wall 128a abut against two of the side surfaces of the octagonal column portion of the height adjustment boss member 126, the rotation of the height adjustment boss member 126 relative to the pin holder 121 is restricted. can do.

  The PM provided with the wafer lift device 120 is not limited to the PM that performs the COR processing on the wafer, and may be any PM that performs any processing.

  The end 123a of the lift arm 123 has a quadrangular shape. However, the shape of the end 123a is not limited to this, and may be at least complementary to the shape of the stopper wall 128a of the lift arm rotation stopper 128. Good. Further, the shape of the upper portion of the height adjustment boss member 126 is not limited to the octagonal prism shape, and may be any shape that engages with at least the shape of the stopper wall portion 128a of the lift arm rotation stopper 128.

  In the above-described CVD processing apparatus 10, the substrate to be processed is a wafer for a semiconductor device, but the substrate to be processed is not limited to this. For example, an LCD (Liquid Crystal Display), an FPD (Flat Panel Display), or the like is used. It may be a glass substrate.

It is a top view which shows schematic structure of the CVD processing apparatus as a substrate processing apparatus which concerns on embodiment of this invention. FIG. 2 is a perspective view showing a schematic configuration of a PM that performs COR processing on a wafer in FIG. 1. It is sectional drawing which shows schematic structure of the chamber in FIG. It is a piping diagram which shows the gas supply system of the gas box in FIG. It is a piping diagram which shows the exhaust system in PM of FIG. It is a figure which shows schematic structure of the wafer lift apparatus arrange | positioned in the chamber of FIG. 3, (A) is a top view of arrow A in FIG. 3 of the apparatus, (B) is line B- in (A). It is sectional drawing which follows B. It is a figure which shows schematic structure of the lift pin protrusion amount adjuster in FIG. 6, (A) is a disassembled perspective view, (B) is an expansion perspective view of the block for height adjustment in a lift pin protrusion amount adjuster. FIG. 8 is a process diagram illustrating a lift pin protrusion amount adjusting method using the lift pin protrusion amount adjuster of FIG. 7. It is a figure which shows schematic structure of the system controller in the CVD processing apparatus of FIG. It is a figure which shows schematic structure of the wafer lift apparatus arrange | positioned in the chamber of PM as a substrate processing apparatus which concerns on the 2nd Embodiment of this invention, (A) is a top view of the apparatus, (B) These are sectional drawings in alignment with line CC in (A). It is a disassembled perspective view which shows schematic structure of the lift pin protrusion amount adjuster in FIG. It is process drawing which shows the lift pin protrusion amount adjustment method using the lift pin protrusion amount adjuster of FIG.

Explanation of symbols

10 CVD processing equipment 11-14 PM
15 TM
16 LM
17, 18 LLM
19 Hoop mounting table 20 Oriental 21 Gas box 22 ECS power supply 23 Chamber 24 APC valve 25 TMP
26 Exhaust pipe 27 Trap 28 ESC chiller 29 Module temperature control unit 30 Frame 31 Chamber lid 32 Container 33 ESC
34 Shower head 35 Electrode plate 36 Lower layer portion 37 Upper layer portion 38 First buffer chamber 39 Second buffer chamber 40, 41 Gas vent hole
42 Lift pin 43 Wafer system stop recess 44 Unloading / inlet port 45 Gate valve 46 Hydrogen fluoride gas supply system 47 Ammonia gas supply system 48-50, 64, 65 Introduction pipe 51, 52, 55-58, 66, 67, 70-73 Branch Tube 53, 54, 59, 60, 68, 69, 74 MFC
61, 76 Vacuum suction pipe 62, 75 Mixing pipe 63, 79 Heater 77 DP
78 Bypass pipes 80, 120 Wafer lift device 81, 121 Pin holder 82, 122 Lift pin protrusion amount adjuster 83, 123 Lift arm 84, 124 Lift arm accommodation groove 85, 125 Lift pin accommodation hole 86 Height adjustment block 87 Block fixing nut 88 Block Angle fixing washer 89 Flat washer 90 Spring washer 91 Height regulating bolts 92, 95 Screw hole 93 Block angle fixing washer system retaining groove 94 Height adjusting block receiving hole 96, 97 Through hole 98 Bolt 99 Refrigerant chamber 100 EC
101, 102, 103 MC
104 switching hub 105 LAN
106 PC
107 DIST board 108 GHOST network 109, 110, 111 I / O module 112 I / O part 121a Screw hole 121b for boss member Screw hole 123a End part 123b, 133 Through hole 126 Boss member 127 for height adjustment Adjuster assembly bolt 128 Lift Arm rotation stopper 128a Stopper wall 128b Protruding portion 129, 130 Washer 131 Rotation stopper bolt 132 Assembly bolt washer

Claims (4)

Substrate processing comprising: a COR processing module that performs COR processing on a substrate; a CVD processing module that performs CVD processing on the substrate; and a transport module that connects the COR processing module and the CVD processing module and transports the substrate. A device,
The COR processing module includes a chamber for accommodating the substrate, a mounting table disposed in the chamber for mounting the substrate, and a substrate lift device disposed in the chamber for lifting the substrate from the mounting table. It has a door,
The substrate lift device includes a rod-shaped lift pin, a lifting member that moves up and down around the mounting table, and an interlocking member that interlocks the lift pin and the lifting member.
The mounting table is drilled along a lifting direction of the lifting member, and is connected to the interlocking member receiving groove for storing at least a part of the interlocking member, the interlocking member receiving groove, and Open to the mounting surface on which the substrate is mounted, and has a lift pin receiving hole for storing the lift pin,
The lift pin is placed on the interlocking member in the interlocking member receiving groove,
The elevating member has a protrusion amount adjusting mechanism capable of adjusting an amount of protrusion from the placement surface of the lift pin.
The protrusion amount adjusting mechanism is connected to the interlocking member and has a polygonal columnar block member having a screw on at least a part of a side surface thereof, and a height that defines the height of the block member from the lifting member. and defining member, which has a male thread screwed to the internal thread of the block member, a nut member seated on the lifting member, to have a a rotation regulating member for regulating the rotation with respect to the elevation member of said block member A substrate processing apparatus. Substrate processing comprising: a COR processing module that performs COR processing on a substrate; a CVD processing module that performs CVD processing on the substrate; and a transport module that connects the COR processing module and the CVD processing module and transports the substrate. A device,
The COR processing module includes a chamber for accommodating the substrate, a mounting table disposed in the chamber for mounting the substrate, and a substrate lift device disposed in the chamber for lifting the substrate from the mounting table. And
The substrate lift device includes a rod-shaped lift pin, a lifting member that moves up and down around the mounting table, and an interlocking member that interlocks the lift pin and the lifting member.
The mounting table is drilled along a lifting direction of the lifting member, and is connected to the interlocking member receiving groove for storing at least a part of the interlocking member, the interlocking member receiving groove, and Open to the mounting surface on which the substrate is mounted, and has a lift pin receiving hole for storing the lift pin,
The lift pin is placed on the interlocking member in the interlocking member receiving groove,
The elevating member has a protrusion amount adjusting mechanism capable of adjusting an amount of protrusion from the placement surface of the lift pin.
The interlocking member has an end portion having a predetermined shape,
The protrusion amount adjusting mechanism has a rotation restricting portion that has a shape complementary to a predetermined shape of the end portion, and is connected to the rotation restricting member fastened to the elevating member, to the elevating member, and a height adjusting member for mounting the end portion, the interlocking member, the base plate processor you; and a bolt for fastening together the height adjusting member and the lifting member. A substrate lift apparatus that is disposed in the chamber of a substrate processing module that includes a chamber that accommodates a substrate and a mounting table that is disposed in the chamber and mounts the substrate, and that lifts the substrate from the mounting table. Because
A rod-shaped lift pin, a lifting member that moves up and down around the mounting table, and an interlocking member that interlocks the lift pin and the lifting member,
The mounting table is drilled along a lifting direction of the lifting member, and is connected to the interlocking member receiving groove for storing at least a part of the interlocking member, the interlocking member receiving groove, and Open to the mounting surface on which the substrate is mounted, and has a lift pin receiving hole for storing the lift pin,
The lift pin is placed on the interlocking member in the interlocking member receiving groove ,
The elevating member has a protrusion amount adjusting mechanism capable of adjusting an amount of protrusion from the placement surface of the lift pin.
The protrusion amount adjusting mechanism is connected to the interlocking member and has a polygonal columnar block member having a screw on at least a part of a side surface thereof, and a height that defines the height of the block member from the lifting member. Rukoto that Yusuke and defining member, which has a male thread screwed to the internal thread of the block member, a nut member seated on the lifting member, and a rotation regulating member for regulating the rotation with respect to the elevation member of said block member A substrate lift device. A substrate lift apparatus that is disposed in the chamber of a substrate processing module that includes a chamber that accommodates a substrate and a mounting table that is disposed in the chamber and mounts the substrate, and that lifts the substrate from the mounting table. Because
A rod-shaped lift pin, a lifting member that moves up and down around the mounting table, and an interlocking member that interlocks the lift pin and the lifting member,
The mounting table is drilled along a lifting direction of the lifting member, and is connected to the interlocking member receiving groove for storing at least a part of the interlocking member, the interlocking member receiving groove, and Open to the mounting surface on which the substrate is mounted, and has a lift pin receiving hole for storing the lift pin,
The lift pin is placed on the interlocking member in the interlocking member receiving groove,
The elevating member has a protrusion amount adjusting mechanism capable of adjusting an amount of protrusion from the placement surface of the lift pin.
The interlocking member has an end portion having a predetermined shape,
The protrusion amount adjusting mechanism has a rotation restricting portion that has a shape complementary to a predetermined shape of the end portion, and is connected to the rotation restricting member fastened to the elevating member, to the elevating member, and a height adjusting member for mounting the end portion, the interlocking member, the base plate lifting device you; and a bolt for fastening together the height adjusting member and the lifting member.

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