TWI415182B - A substrate processing device, a chemical type oxide removal (COR) processing module, and a substrate raising device - Google Patents

Abstract

This invention provided substrate treatment equipment capable of preventing the generation of a defective film formation. The PM of CVD treatment equipment has a chamber; and the chamber has a vessel,an ESC (33) arranged in the vessel, and a wafer lifting device (80) arranged in the vessel. The wafer lifting device (80) has an annular pin holder (81) disposed so as to surround the ESC (33) in thevessel, three lift arms (83) connected to the pin holder (81), and three lift pins (42) movably fitted and connected and carried to each lift arm (83). Each lift pin (42) is lifted and lowered in aninterlocking with the lifting and lowering of the pin holder (81).

Description

Substrate processing device, chemical oxide removal (COR) processing module, and substrate raising device

The present invention relates to a substrate processing apparatus, a chemical oxide removal (COR) processing module, and a substrate raising apparatus; and more particularly to a substrate raising apparatus provided in a COR processing module in which a COR processing is applied to a substrate.

Conventionally, a CVD apparatus in which a substrate, for example, a surface of a wafer for a semiconductor device (hereinafter referred to as "wafer"), has been formed by CVD (Chemical Vapor Deposition Chemical Vapor Deposition) to form a desired film has been known.

The CVD apparatus includes a plurality of processing modules (hereinafter referred to as "PM") for performing CVD processing and accompanying processing (for example, wafer cleaning processing or heat treatment). Each PM system stores a wafer, and applies a CVD process or a process to the accommodated wafer. Further, each PM is radially connected to a transport module (hereinafter abbreviated as "TM"), and a transfer arm for transporting the wafer is placed therein. After the respective substrates are subjected to the corresponding processing, the PM is carried in via the TM. Next PM.

In recent years, the wiring layer formed on the semiconductor device has a multilayer wiring structure in accordance with the increase in density and high integration of the circuit. The electrical connection between the semiconductor device and the wiring layer is performed by using one of the wiring layers in the lamination direction to reach the contact hole of the semiconductor device; and the electrical connection between the wirings in the wiring layer is used to penetrate the wiring layer toward the lamination direction. Through hole. The contact holes or the through holes are formed by etching, and each of the holes is filled with a metal such as aluminum (Al) or tungsten (W) or an alloy containing the metal as a main component. In order to ensure the metal or alloy filled in each hole, contact with the bismuth (Si) substrate or the polysilicon layer in the semiconductor device is formed on the inside of each hole before filling the metal or alloy. A titanium (Ti) layer is further formed thereon with a titanium nitride (TiN) layer. In general, the film formed by CVD does not increase the electric resistance, and the film thickness is also average (the step coverage is good), so that the film formation of the Ti layer or the TiN layer can be performed by CVD. In particular, CVD using TiCL ₄ causes Ti to react with Si of the substrate while the Ti film is grown, and self-couplingly selects TiSi ₂ on the Si diffusion layer at the bottom of the hole. Thereby, the ohmic resistance with respect to conductivity at the bottom of the hole can be reduced.

However, the coupling energy of TiCL ₄ is very high. When only TiCL ₄ is decomposed by thermal energy, the ambient temperature must be above 1200 °C. Therefore, the film formation of the Ti film is performed by using TiCl _{4 to} decompose not only thermal energy but also plasma CVD using plasma energy. This plasma CVD may be performed at an ambient temperature of about 650 °C.

On the other hand, since a natural oxide film is easily formed on the substrate or on the polysilicon layer, in order to reduce the contact resistance between the Ti layer and the germanium formed, it is necessary to remove the natural oxide film before the plasma CVD described above. deal with.

Conventionally, as a treatment for removing a natural oxide film, a removal treatment by a dilute hydrofluoric acid gas or a hydrogen (H ₂ ) gas and an argon (Ar) gas are used to form an inductively coupled plasma, and the plasma is removed by the plasma. Processing (for example, refer to Patent Document 1.).

However, in recent years, with the miniaturization of the semiconductor device, the thickness (depth) of the Si diffusion layer is also small, and the growth of the TiSi ₂ film in the CVD of the Ti film is not advanced, and it is difficult to reduce the contact resistance to a desired value. In order to achieve a lower contact resistance for a thin TiSi ₂ film, it is necessary to form a large amount of TiSi ₂ having a C54 phase (crystal structure) in the film; however, since the ambient temperature in the CVD using only thermal energy is high, it is difficult More C54 phase TiSi ₂ crystals which are easily formed at low temperatures are formed. In particular, when the argon plasma is used to perform the natural oxide film removal treatment before the Ti film CVD, the Si diffusion layer is damaged by the plasma during the removal process, and becomes unevenly amorphous, so that it is formed in the film. TiSi TiSi ₂ Si diffusion layer on the film ₂ is formed, each of which will be greatly different grain size. The TiSi ₂ film formed by the TiSi ₂ crystal having a large difference in particle size has a loose crystal density, a high relative electric resistance, and an unstable contact with the Si diffusion layer. As a result, the contact resistance is increased.

Therefore, it is currently reviewed to apply a COR (Chemical Oxide Removal) treatment to the Si diffusion layer (Diffusion layer) to remove the natural oxide film by a chemical reaction.

A PM for applying a COR treatment to a wafer includes a reaction chamber for accommodating a wafer, and a placement table (platform) for arranging the wafer in the reaction chamber; the placement table has a wafer when the wafer is carried in and out Raise the higher number of needles. Each of the raising needles is passed through the placing table, and is raised and lowered by the raising needle assembly (elevating the needle lifting device) disposed under each of the raising pins (for example, refer to Patent Document 2). In this PM, the raising needle assembly is disposed in the outside of the reaction chamber, that is, in the atmosphere, and the raising needle protrudes in the decompression environment, that is, in the reaction chamber, so that the lifting needle receiving hole in the standing chamber is connected to the atmosphere and the reaction chamber. Therefore, the lubricating oil should be filled in the raising needle receiving hole to isolate the reaction chamber from the atmosphere.

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei-4-336426 [Patent Document 2] US Patent Application Publication No. 2004/0182315

However, in the CVD apparatus, each PM is connected via TM, so that the lubricant which is evaporated from the COR treatment PM, that is, the lubricating oil, invades the CVD-treated PM which forms the Ti layer or the TiN layer, and generates the Ti layer or TiN. The problem of poor film formation of the layer.

An object of the present invention is to provide a substrate processing apparatus, a chemical oxide removal (COR) processing module, and a substrate raising apparatus which can prevent film formation defects.

In order to achieve the above object, the substrate processing apparatus according to the first aspect of the invention includes a COR processing module that applies a COR (chemical oxide removal) treatment to the substrate, and a CVD processing module that applies a CVD treatment to the substrate. And a transport module that connects the COR processing module and the CVD processing module and transports the substrate; wherein the COR processing module has a reaction chamber that houses the substrate, and is disposed in the reaction chamber to place the substrate And a placing table and a substrate raising device for raising the substrate from the placing table; the substrate raising device is disposed in the reaction chamber.

The substrate processing apparatus according to the first aspect of the invention, wherein the substrate raising apparatus has a rod-shaped raising needle and surrounding the placing table. a lifting member for lifting and lowering, and an interlocking member for interlocking the raising pin with the lifting member; wherein the placing table has a linking member receiving groove that is disposed along the lifting direction of the lifting member and accommodates at least a part of the linking member; And a lifting needle receiving hole that is connected to the interlocking member receiving groove and in which the placing surface of the substrate is placed in the placing table, and accommodates the raising needle; the lifting needle is placed in the interlocking member receiving groove and is placed in the interlocking member.

The substrate processing apparatus according to claim 2, wherein the lifting member has an amount of protrusion that can be adjusted from the placement surface. Prominent adjustment mechanism.

The substrate processing apparatus according to claim 4, wherein the projection amount adjustment mechanism is connected to the interlocking member, and at least a part of the side surface has a common a polygonal columnar member having a thread; and a predetermined member defining a height of the block from the lifting member; and a female thread having a female thread that is screwed to the male thread of the block, and being seated on the lifting member a cap member; and a rotation gauge member that regulates rotation of the above-described block member to the elevating member.

The substrate processing apparatus according to claim 5, wherein the interlocking member has an end portion having a specific shape, and the protrusion amount adjusting mechanism has a rotation specification. a member having a rotation gauge portion having a shape complementary to a specific shape of the end portion, and is defined by the elevation member; and a height adjustment member coupled to the elevation member and placing the end portion; and a bolt, which are mutually The interlocking member, the height adjusting portion, and the lifting member are connected.

In order to achieve the above object, the chemical oxide removal (COR) processing module described in claim 6 is connected to a CVD processing module that applies a CVD process to the substrate via a transfer module that transports the substrate. The substrate is subjected to COR treatment, and characterized in that: a reaction chamber for accommodating the substrate, a placement table placed in the reaction chamber to place the substrate, and a substrate raising device for raising the substrate from the placement table; The high device is disposed in the reaction chamber.

In order to achieve the above object, the substrate raising apparatus according to claim 7 is disposed in a substrate processing module having a reaction chamber in which a substrate is housed and a placement table in which the substrate is placed in the reaction chamber. In the reaction chamber, the substrate is raised from the placement table; and the method includes: a rod-shaped elevation needle, and a lifting member that moves up and down around the placement table; and an interlocking member that interlocks the elevation needle with the lifting member; The placing table has a linking member receiving groove that is disposed along the lifting direction of the lifting member, and accommodates at least a part of the linking member, and a placement surface that communicates with the linking member receiving groove and places the substrate in the placing table And a lifting needle receiving hole for accommodating the raising needle; the lifting needle is placed in the linking member in the interlocking member receiving groove.

The substrate raising device according to claim 7, wherein the lifting member has a protrusion that can adjust the height of the lifting needle from the placement surface. The amount of protrusion adjustment mechanism.

The substrate raising device according to claim 8, wherein the protrusion amount adjusting mechanism is coupled to the interlocking member and has at least a part of a side surface. a polygonal column-shaped block having a male thread; and a predetermined member defining a height of the block from the lifting member; and a female thread having a male thread that is screwed to the block, and being seated on the lifting member a nut member; and a rotation specification member that regulates rotation of the above-described block member to the lifting member.

The substrate raising device according to claim 8, wherein the interlocking member has an end portion having a specific shape, and the protruding amount adjusting mechanism has a rotation gauge member having a rotation gauge portion that exhibits a shape complementary to a specific shape of the end portion, and is coupled to the lift member; and a height adjustment member coupled to the lift member and placing the end portion; and a bolt, The interlocking member, the height adjusting portion, and the lifting member are connected to each other.

The substrate processing apparatus according to claim 5, wherein the one of the height adjustment members has a shape that is complementary to a complementary shape of the rotation specification unit. .

The substrate raising device according to claim 12, wherein the one of the height adjusting members is in a complementary shape to the rotating specification portion. shape.

According to the substrate processing apparatus according to the first aspect of the patent application and the chemical oxide removal (COR) processing module described in claim 6 of the patent application, the CVD processing module to which the CVD treatment is applied to the substrate is carried by the transfer mold. The COR processing module connected to the group has a reaction chamber for accommodating the substrate, a placement table for placing the substrate disposed in the reaction chamber, and a substrate raising device for lifting the substrate from the placement table, and the substrate raising device is configured In the reaction chamber, it is not necessary to provide a hole connecting the reaction chamber and the atmosphere at the placing table, and it is not necessary to use lubricating oil. Therefore, when a CVD process is applied to the substrate, film formation failure can be prevented from occurring on the substrate.

According to the substrate processing apparatus of the second aspect of the patent application, the rod-shaped raising needle is placed in the groove in the linking member which is disposed along the lifting and lowering direction of the lifting member in the placing table, and the raising needle is placed on the interlocking member. The lifting member is connected to the lifting member that is raised and lowered around the placing table; and the lifting needle is received in the lifting needle receiving hole, which communicates with the linking member receiving groove, and the placing surface of the substrate is placed in the placing table; therefore, the lifting needle is placed on the placing surface. It is free to protrude, so that the substrate can be raised and raised on the placement surface.

According to the substrate processing apparatus of the third aspect of the patent application and the substrate raising apparatus of claim 8, the lifting member has a protruding amount adjusting mechanism capable of adjusting the protruding amount of the raising needle from the placement surface. Therefore, when a plurality of raising needles are arranged, by adjusting the protruding amount of each raising needle from the placing surface, the substrate can be raised more stably on the placing surface; and the protruding amount adjusting mechanism is not required to be disposed under the placing board. Therefore, it is not necessary to dig a large hole in the placing table. Therefore, it is possible to install a cooling system or an electrode plate for electrostatic adsorption in the placing table to stably apply a desired treatment to the substrate.

According to the substrate processing apparatus of the fourth aspect of the invention, and the substrate raising apparatus of the ninth aspect of the invention, the protruding amount adjusting mechanism has a polygonal shape in which at least a part of the side surface has a male thread. a columnar block; and a predetermined member that defines a height from the lifting member of the block; and a nut member having a female thread that is screwed to the male thread of the block, and is seated on the lifting member; and a gauge block a rotating specification member for rotating the lifting member; therefore, when the nut member is screwed to the block and the nut member is seated on the lifting member, the rotation of the block is regulated to increase the height of the block from the lifting member. The lifting member can be stopped without change, and the height of the interlocking member from the lifting member can be adjusted more easily and surely, so that the amount of protrusion of the raising needle from the placing surface can be adjusted.

According to the substrate processing apparatus of the fifth aspect of the patent application and the substrate raising apparatus of claim 10, since the interlocking member has an end portion having a specific shape, and then the protrusion amount adjusting mechanism has a rotation specification a member having a rotation gauge portion that presents a shape complementary to a specific shape of an end portion of the interlocking member, and is associated with the elevation member; and a height adjustment member coupled to the elevation member and placing the end portion of the linkage member; and a bolt When the interlocking member, the height adjusting portion, and the elevating member are mutually connected, the elevating member is coupled to the height adjusting member, and when the end portion of the interlocking member is placed at the height adjusting member, and the interlocking member, the height adjusting portion, and the elevating member are mutually connected by bolts, The rotation of the lifting member to the lifting member can be regulated. Further, by adjusting the amount of protrusion of the height adjusting member from the elevating member, the amount of protrusion of the interlocking member from the elevating member can be adjusted. As a result, it is possible to more easily and surely adjust the amount of protrusion of the raising needle from the placement surface.

According to the substrate raising device described in claim 7 of the patent application, since the substrate raising device is disposed in the reaction chamber in the substrate processing module having the reaction chamber and the placing table; the rod-shaped lifting needle is placed along the placing table. In the interlocking member accommodating groove through which the lifting member is moved in the lifting direction, the raising pin is placed on the linking member, and the lifting member is moved in conjunction with the lifting member around the placing table; and the raising pin is received in the raising pin receiving hole. It is connected to the interlocking member accommodation groove, and the placement surface of the substrate placed in the placement table is opened; therefore, it is not necessary to provide a hole connecting the reaction chamber and the atmosphere to the placement table, and it is not necessary to use lubricating oil. Therefore, when a CVD process is applied to the substrate, film formation failure can be prevented from occurring on the substrate. Moreover, the raising needle is freely protruded on the placement surface, whereby the substrate can be stably raised on the placement surface.

The substrate processing apparatus according to claim 11 or the substrate raising apparatus according to claim 12, wherein one of the height adjusting members has a shape that is engaged with a complementary shape of the rotation specification portion; Therefore, the rotation of the lifting member can be regulated by the height adjusting member.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, a substrate processing apparatus according to a first embodiment of the present invention will be described.

FIG. 1 is a plan view showing a schematic configuration of a CVD processing apparatus as a substrate processing apparatus according to the present embodiment.

In the first embodiment, the CVD processing apparatus 10 includes four processing modules (hereinafter referred to as "PM") 11 to 14, and a transport module (hereinafter referred to as "TM") 15, and a loading module (hereinafter referred to as It is "LM") 16, and two load-fixing modules (hereinafter referred to as "LLM") 17, 18. In the CVD processing apparatus 10, four PMs 11 to 14 are radially connected to the TM 15 , and TM 15 and LM 16 are connected via two LLMs 17 and 18.

In addition to the LLMs 17 and 18 described above, the LM16 is connected to three FOUP placement stations 19, which are respectively placed with FOUPs (Front Opening Unified) for accommodating 25 wafers for semiconductor devices (hereinafter referred to as "wafers"). Pod, wafer transfer cassette; and locator 20 that pre-aligns the wafer position that is carried out from the FOUP. Further, the LM16 is provided with a transfer arm (not shown) for transporting the wafer, and the transfer arm transports the unprocessed or processed wafer between the FOUP, the positioner 20, and the LLMs 17, 18.

The PM 11 has a reaction chamber 23 to be described later, and applies a COR treatment to the wafer accommodated in the reaction chamber 23. The PM 12 also has a reaction chamber (not shown), and a PHT (Post Heat Treatment) treatment to be described later is applied to the wafer accommodated in the reaction chamber. Further, the PM 13 also has a reaction chamber (not shown), and a CVD treatment for forming a Ti layer is applied to the surface of the wafer accommodated in the reaction chamber. Further, the PM 13 also has a reaction chamber (not shown), and a CVD treatment for forming a TiN layer is applied to the surface of the wafer accommodated in the reaction chamber.

The TM15 is equipped with a transfer arm (not shown) for transporting the wafer, and the transfer arm transports the unprocessed or processed wafer between PMs 11 to 14 and LLMs 17, 18. Each of the LLMs 17 and 18 is provided with a placing table (not shown) on which the wafer is placed, and the wafer carried by the transfer arm of the LM 16 or the transfer arm of the TM 15 is temporarily stored.

In the CVD apparatus 10, the wafer loaded by the transfer arm of the TM15 is carried in and out in the order of PM11 to 14. Thereby, the wafer is sequentially subjected to the CVD treatment required for the COR treatment, the PHT treatment, the Ti layer formation, and the CVD treatment required for the TiN layer formation. Further, these series of processes are performed by a system controller (not shown) of the CVD apparatus 10 to be described later, which executes a program that is subjected to a series of processes.

The COR process is to treat foreign matter on the diffusion layer of the wafer, and even if the oxide film chemically reacts with the gas molecules to produce a product; the PHT process heats the wafer after the COR treatment, and the chemical reaction of the COR treatment The resulting product is vaporized. Thermal Oxidation and removal from the wafer. As described above, since the COR treatment and the PHT treatment are treatments for removing the oxide film on the diffusion layer without using a water component, they correspond to a dry cleaning treatment (Dry-Cleaning).

In the PM 11 of the CVD processing apparatus 10, ammonia gas and hydrogen fluoride (anhydrous HF) gas are used as the system. Here, the hydrogen fluoride system promotes the corrosion of the oxide film on the diffusion layer, and the ammonia gas restricts the reaction between the oxide film and the hydrogen fluoride as necessary, and finally, the reaction by-product (By-product) is stopped. Specifically, the COR treatment and PHT treatment in PM11 removes an oxide film such as SiO ₂ by using the following chemical reaction.

(COR treatment) SiO ₂ +4HF → SiF ₄ +2H ₂ O SiF ₄ +2NH ₃ → (NH ₄ ) ₂ SiF ₆ (PHT treatment) (NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑+2NH ₃ +2HF ↑

In addition, a number of N ₂ and H ₂ are also produced in the PHT process. Further, the COR treatment and the PHT treatment using the above chemical reaction have the following characteristics.

1) The selection ratio (removal speed) of the thermal oxide film is high. Specifically, in the COR treatment and the PHT treatment, the thermal oxide film is selected to be relatively high, and the ruthenium selection ratio is low. Therefore, the foreign matter mainly composed of the thermal oxide film can be effectively removed.

2) The surface of the diffusion layer after removal of foreign matter has a slow growth rate of the natural oxide film. Specifically, the upper diffusion layer is removed by COR treatment and PHT treatment, and the surface thereof is covered with hydrogen or fluorine (the diffusion layer is hydrogen or Fluorine is blocked, so the surface is inactivated and chemically stable. As a result, the surface of the natural oxide film is inhibited from growing, specifically, thickness 3 The growth time of the natural oxide film is 2 hours or more. Therefore, an unnecessary oxide film is not generated in the manufacturing process of the semiconductor device, and conduction failure can be prevented in the semiconductor device to improve reliability.

3) The reaction is carried out in a dry environment. Specifically, water is not used in the COR treatment, and the water produced by the COR treatment is also vaporized by the PHT treatment, so that the surface of the diffusion layer on which the upper layer is removed is not disposed with OH. base. Therefore, the surface of the diffusion layer does not have hydrophilicity, so that the surface does not absorb water, so that the wiring reliability of the semiconductor device can be prevented from being lowered.

4) The amount of produced product is saturated after a certain period of time. Specifically, after a certain period of time, even if the diffusion layer is continuously exposed to a mixed gas of ammonia gas and hydrogen fluoride, the amount of produced product will not be generated. increase. Further, the amount of generated matter can be determined by a mixed gas parameter such as a mixed gas pressure and a volume flow ratio. Thereby, the amount of removal of the oxide film on the diffusion layer can be easily controlled.

5) Very little particle production.

Specifically, in the PM 11 , even if a large amount of wafers are removed from the oxide film on the wafer diffusion layer, the inside of the side walls of the reaction chamber 23 and the like are hardly observed to adhere to the particles causing the foreign matter. Therefore, the semiconductor device does not cause conduction failure, and the reliability of the semiconductor device can be improved.

As described above, in the CVD processing apparatus 10, COR processing and PHT processing are applied to the wafer before the CVD process for forming the Ti layer and the TiN layer is applied to the wafer. Thereby, generation of fine particles can be suppressed, and the gate of the polysilicon can be prevented from being removed, and foreign matter (oxide film) on the diffusion layer of the wafer can be removed. Therefore, it is possible to surely suppress occurrence of conduction failure in the semiconductor device.

Fig. 2 is a perspective view showing a schematic structure of a PM to which a COR process is applied to a wafer in Fig. 1;

In Fig. 2, the PM 11 includes a reaction chamber 23 that stores a wafer, applies a COR treatment to the wafer, and a gas supply device that supplies ammonia gas and hydrogen fluoride gas to the inside of the container 32 in the reaction chamber 23, that is, the gas tank 21 And an ECS power source 22 for applying a DC voltage to the electrode plate 35 of the ESC 33, which is disposed in the container 32 as a wafer placement stage, and an automatic pressure for controlling the pressure in the container 32 by a variable butterfly valve. An automatic pressure control valve (hereinafter referred to as "APC valve") 24; and a turbo pump that is used to evacuate the inside of the container 32 via the APC valve 24, that is, a turbo pump (Turbo Molecular Pump) Hereinafter, it is referred to as "TMP") 25; and the present exhaust pipe 26 that connects the TMP 25 to a DP (Dry Pump) 77 to be described later; and the exhaust pipe 26 disposed in the middle of the exhaust pipe 26 to capture the product in the exhaust gas a trap 27; and an ESC cooler 28 that supplies a specific temperature refrigerant to the refrigerant reaction chamber 99 described later in the ESC 33, for example, a cooling water supply; and a module temperature control unit 29 that controls the overall temperature of the PM 11; and each component of the control PM 11 (21) ~29) The action of MC (Module Controller module) Controller) 101. Further, each of the components (21 to 29) of the PM 11 is fixed to the frame 30 and is regarded as one module.

In the PM 11, the TMP 25, the APC valve 24, the reaction chamber 23, and the gas box 21 are arranged in a vertical line in the vertical direction in the drawing. Thereby, the size of the PM 11 can be reduced, and the arrangement of the PM 11 in the CVD processing apparatus 10 can be simplified.

The upper part of the reaction chamber 23 has a reaction chamber top cover (cover) 31, and has a gauge (not shown) for monitoring the state inside the container 32 at the side. The switching angle of the reaction chamber top cover 31 is 180°, and the maintenance of the reaction chamber 23 does not hinder the maintenance work of the operator, such as wet cleaning or replacement of the reaction chamber parts, so that the reaction chamber top cover 31 can improve the reaction chamber. 23 maintainability.

Fig. 3 is a cross-sectional view showing a schematic structure of a reaction chamber in Fig. 2;

In the third drawing, the reaction chamber 23 has a cylindrical container 32 made of aluminum, a cylindrical ESC 33 disposed below the inside of the container 32, and a shower head 34 disposed above the inside of the container 32. The ESC 33 has a structure in which an aluminum member, an Al ₂ O ₃ member, and an aluminum member are laminated from the lower side in the drawing.

The ESC 33 has an internal electrode plate 35 to which a DC voltage from the ECS power source 22 is applied, and the Coulomb force or Johnson generated by the applied DC voltage. Johnsen-Rahbek forces to hold the wafer. Further, the ESC 33 has, for example, an annular refrigerant reaction chamber 99 extending in the circumferential direction. The refrigerant reaction chamber 99 is circulated and supplied to a specific temperature refrigerant (for example, cooling water) via a refrigerant pipe (not shown) from the ESC cooler 28, and is controlled to be adsorbed and held on the ESC 33 by the temperature of the refrigerant. The processing temperature of the wafer W. Further, the ESC 33 system has a heat conduction gas supply system (not shown) that supplies a heat transfer gas (helium gas) between the upper surface of the ESC 33 and the back surface of the wafer. During the COR process, the heat transfer system performs heat exchange between the ESC 33 and the wafer maintained at a predetermined temperature by the refrigerant to uniformly and efficiently cool the wafer.

Further, in the ESC 33, a plurality of raising pins 42 are protruded from the upper surface on which the wafer is placed (hereinafter referred to as "placement surface"). These raising pins 42 are constituent elements of the wafer raising device 80 described later, and are interlocked with the lifting and lowering of the needle holder 81 which is a component of the wafer lifting device 80 in the container 32, and are protruded from the placement surface, or Buried into the placement surface. Specifically, when the wafer is adsorbed and held by the ESC 33, the lift pin 42 is buried in the ESC 33, and when the wafer subjected to the COR treatment is carried out of the container 32, the wafer is lifted upward from the upper surface of the ESC 33.

The placement surface of the ESC 33 is subjected to a hole punching process having a diameter larger than a specific value of the wafer diameter to form a wafer locking recess 43. The wafer is held in the wafer locking recess 43 while the wafer is being subjected to the COR process, so that the wafer does not move. Thereby, a more even COR treatment can be applied to the wafer surface.

The inner side of the container 32 is coated with a specific surface treatment. As the surface treatment to be applied, there are an anodic oxide coating treatment, an OGF (Out Gas Free) anodic oxide coating treatment, or a mechanical polishing, a fluorine passivation treatment, or the like. In addition, the surface of the container 32 is not subjected to a surface treatment, and the aluminum can be exposed to the inside of the container 32.

Further, a wafer carry-in/out port 42 is provided inside the side wall of the container 32, which corresponds to a position at which the raising needle 42 is lifted from the ESC 33 to the upper wafer height; and outside the side wall of the container 32, a loading/unloading port 44 is attached and closed. Gate valve 45. The PM 11 is connected to the TM 15 via the gate valve 45.

A heater (not shown), such as a heating element, is mounted in the side wall of the container 32 and the gate valve 45 to prevent a decrease in ambient temperature within the container 32 or within the TM15. Thereby, the reproducibility of the COR process can be improved. Further, the heating element in the side wall prevents the reaction by-product from adhering to the inside of the side wall by controlling the temperature of the side wall.

The shower head 34 has a two-layer structure, and the lower layer portion 36 and the upper layer portion 37 have a first buffer reaction chamber 38 and a second buffer reaction chamber 39, respectively. The first buffer reaction chamber 38 and the second buffer reaction chamber 39 communicate with each other through the gas vent holes 40 and 41 in the container 32. That is, the shower head 34 is composed of a plate-like body which is stacked in a stepped shape, and has internal passages for supplying the gas supplied to the first buffer reaction chamber 38 and the second buffer reaction chamber 39 into the container 32, respectively.

When the COR process is applied to the wafer, the first buffer reaction chamber 38 is supplied with a mixed gas containing ammonia gas from the mixing pipe 75 of the ammonia gas supply system 47 to be described later, and the supplied mixed gas is supplied through the gas vent 40. It is supplied into the container 32. In addition, the second buffer reaction chamber 39 is supplied with a mixed gas containing hydrogen fluoride gas from a mixing tube 62 of a hydrogen fluoride gas supply system 46 to be described later, and the supplied mixed gas is supplied into the container 32 via the gas vent 41. Further, the shower head 34 is provided with a heater (not shown), for example, a heating element. The heating element is desirably disposed on the upper portion 37, and controls the temperature of the mixed gas containing hydrogen fluoride in the second buffer reaction chamber 39.

In the reaction chamber 23, the pressure in the vessel 32 is adjusted, and the volume flow ratio of ammonia gas and hydrogen fluoride gas is applied, and COR treatment is applied to the wafer under appropriate conditions. Further, the reaction chamber 23 is designed to initially mix the ammonia-containing gas mixture and the fluorine-containing hydrogen gas mixture in the vessel 32 (post-mixing design), so that before introducing the above two kinds of mixed gas into the vessel 32, The mixing of the two types of mixed gases is prevented, and the reaction between the hydrogen fluoride gas and the ammonia gas before being introduced into the vessel 32 can be prevented.

Fig. 4 is a piping diagram showing a gas supply system of a gas box in Fig. 2;

In Fig. 4, the gas tank 21 is provided with a hydrogen fluoride supply system 46 and an ammonia gas supply system 47.

The hydrogen fluoride gas supply system 46 has introduction pipes 48, 49, and 50 for introducing hydrogen fluoride gas, nitrogen gas (N ₂ ), and argon gas from the outside of the gas tank 21, respectively. The introduction pipe 48 is branched into the branch pipes 51 and 52, and the branch pipes 51 and 52 respectively have MFC (Mass Flow Controller) controllers 53, 54. The introduction pipe 49 is divided into branch pipes 55 and 56, and the branch pipes 55 and 56 are connected to the branch pipes 51 and 52, respectively. Thus, hydrogen fluoride gas and nitrogen gas are mixed in the branch pipes 51, 52. Further, MCFs 53 and 54 control the flow rate of the mixed gas of hydrogen fluoride gas and nitrogen gas. The introduction tube 50 is divided into branch pipes 57 and 58, and the branch pipes 57 and 58 have MFCs 59 and 60, respectively. MFC 59 and 60 control the flow rate of argon gas. In addition, the manifolds 55 and 56 having no MFC have orifices to control the amount of gas flowing.

The branch pipes 51, 52, 57, 58 are connected to the mixing pipe 62. Therefore, in the mixed tube 62, a mixed gas of hydrogen fluoride and nitrogen gas is further mixed with argon gas. The mixing pipe 62 communicates with the second buffer chamber 39 in the upper portion 37 of the cloak head 34, and supplies a mixed gas of hydrogen fluoride gas, nitrogen gas, and argon gas to the second buffer chamber 39.

Further, each of the branch pipes 51, 52, 55 to 58 is directly or indirectly connected to a vacuum suction line 61. The vacuum suction pipe 61 is connected to the TMP 25 (refer to Fig. 5). Therefore, each of the manifolds 51, 52, 55-58 can be evacuated by the TMP 5. For example, before the COR treatment is applied to the wafer, the manifolds 51, 52, 55-58 can be evacuated to remove the residues in the tubes. gas.

The hydrogen fluoride supply system 46 is controlled by the flow rate of the MFCs 53, 54, 59, 60 and the vacuum of the branch pipes 51, 52, 55-58, and the hydrogen fluoride, nitrogen gas and argon gas can be mixed with the correct mixing ratio. Correctly control the amount of produced matter in the COR process.

In general, since hydrogen fluoride is easily liquefied by thermal expansion and expansion, the fluorinated hydrogen supply system 46 is liquefied near the MFCs 53 and 54. In order to cope with this, the present embodiment covers a tube in which hydrogen fluoride gas flows, that is, a portion of the introduction tube 48, the branch tubes 51, 52, and the branch tubes 55, 56, by a heater 63 indicated by a wavy line in the figure. Mix tube 62. The heater 63 maintains the temperature in each tube at or above the boiling point of hydrogen fluoride, specifically 40 ° C or higher, and desirably 60 ° C. Thereby, it is possible to surely prevent liquefaction in the hydrogen fluoride refluorination hydrogen supply system 46.

Further, in the hydrogen fluoride supply system 46, each tube has a valve, and the open relationship of these valves is controlled by the MC101. Thereby, the flow path of each gas can be changed.

The ammonia supply system 47 has introduction pipes 64 and 65 for introducing ammonia gas and nitrogen gas to the outside of the gas tank 21, respectively. The introduction pipe 64 is divided into branch pipes 66 and 67, and the branch pipes 66 and 67 have MFCs 68 and 69, respectively. The introduction pipe 65 is branched into the branch pipes 70 to 73, and the branch pipes 70 and 71 are connected to the branch pipes 66 and 67, respectively. Thus, ammonia gas and nitrogen gas are mixed in the manifolds 66, 67. Further, MFCs 68 and 69 control the flow rate of a mixed gas of ammonia gas and nitrogen gas. The manifold 72 has an MFC 74, and the manifolds 70, 71, 73 each have an orifice. MFC74 controls the flow of nitrogen. The orifices of the manifolds 70, 71, 73 adjust the amount of flowing gas.

The branch pipes 66, 67, 72, 73 are connected to the mixing pipe 75. The mixing tube 75 is connected to the first buffer chamber 38 in the lower portion 36 of the shower head 34, and supplies a mixed gas of ammonia gas and nitrogen gas to the first buffer chamber 38.

Further, each of the branch pipes 66, 67, 70, and 71 is directly or indirectly connected to the vacuum suction pipe 76. The vacuum suction pipe 76 is also connected to the TMP 25 like the vacuum suction pipe 61 of the hydrogen fluoride supply system 46 (refer to Fig. 5). Thus, the manifolds 66, 67, 70, 71 can be evacuated by the TMP 25. For example, before the COR treatment is applied to the wafer, the manifolds 66, 67, 70, 71 can be evacuated to remove residual gases in each tube.

The ammonia gas supply system 46 is controlled by the flow rate of the MFCs 68, 69, and 74 and the vacuum of the manifolds 66, 67, 70, and 71, and the ammonia fluoride gas and the nitrogen gas can be mixed with the correct mixing ratio, so that the COR can be properly controlled. The amount of produced matter in the treatment.

Further, in the ammonia supply system 46, each tube also has a valve, and the open relationship of these valves is controlled by the MC101. Thereby, the flow path of each gas can be changed.

Fig. 5 is a piping diagram showing the exhaust system in the PM of Fig. 2.

In Fig. 5, the exhaust pipe 26 is connected to the inside of the container 32, and the APC valve 24, the TMP 25, the trap 27, and the exhaust pump, that is, the DP77, are sequentially connected. Further, the exhaust pipe 26 is branched into the bypass pipe 78 between the reaction chamber 23 and the APC valve 24. The bypass pipe 78 bypasses the APC valve 24, the TMP 25, and the trap 27, and merges between the trap 27 and the DP 77 to the exhaust pipe 26.

When the inside of the container 32 is substantially attracted, the exhaust gas flows only through the bypass pipe 78, and is exhausted only by the DP77. When the inside of the container 32 is evacuated, the exhaust gas flows through the exhaust pipe 26, and is exhausted by the TMP 25 and the DP 77, and the pressure in the container 32 is controlled by the APC 24 disposed in the exhaust pipe 26. .

The TMP 25 is connected to the vacuum suction pipes 61 and 76 of the hydrogen fluoride supply system 46 and the ammonia supply system 47, and evacuates the manifolds 51, 52, 55 to 58, 66, 67, 70, and 71. Further, the TMP 25 is also connected to the heat transfer gas supply system, and the heat transfer gas supply system is evacuated. Further, the heat transfer gas supply system is connected to the exhaust pipe 26 between the TMP 25 and the trap 27, and is substantially attracted by the DP 77.

The trap 27 is cooled by a refrigerant supplied from the outside, and the generated product (By-process) in the exhaust gas is solidified and captured. Thereby, it is possible to prevent the generated matter from flowing out to the outside of the CVD processing apparatus 10, so that environmental maintenance can be surely performed.

Generally, the product in the exhaust gas is liable to be liquefied when the temperature is low, and the liquefied product is deposited as a precipitate in each tube to hinder the flow of the exhaust gas. In order to cope with this, in the present embodiment, the heaters 79 shown by the wavy lines in the figure cover the tubes through which the exhaust gas from the container 32 flows, that is, the exhaust pipe 26 and the bypass pipe 78. Thereby, it is possible to surely prevent the liquefaction of the product in the exhaust gas.

In addition, in the present exhaust system, each tube has a valve, and the open relationship of these valves is controlled by the MC101. Thereby, the flow path of the exhaust gas (the present exhaust pipe 26 and the bypass pipe 78) can be changed.

Fig. 6 is a view showing a schematic structure of a wafer raising device disposed in a reaction chamber in Fig. 3; (A) is a plan view of the device in the arrow angle A of Fig. 3, and (B) is in (A) A cross-sectional view along line B-B.

In FIGS. 6(A) and (B), the wafer raising device 80 (substrate raising device) has an annular needle holder 81 (elevating member) disposed in the container 32 so as to surround the ESC 33; And equally arranged along the circumferential direction of the needle holder 81, and connected to the three elevation arms 83 of the needle holder 81 via three elevation needle protrusion amount adjusters 82 (projecting amount adjustment mechanisms) to be described later (coupling members) And inserting each of the raising arms 83 and then raising the three needles 42 of the round bar member in the raising of the needle hole. Here, the constituent elements of the wafer raising device 80, that is, the needle holder 81, the raising needle protrusion amount adjuster 82, the raising arm 83, and the raising needle 42, are disposed in the container 32, so that the result is crystal The circular lifting device 80 is disposed in the container 32.

The needle holder 81 is configured such that the rotational motion of the motor (not shown) is converted by a ball screw to generate a linear motion, thereby moving up and down, that is, moving in the vertical direction in FIG. 6(B). The ball screw and the motor are disposed outside the reaction chamber 23, that is, on the atmosphere side. Further, the linear motion generated by the ball screw and the motor is transmitted to a support member (not shown) that supports the needle holder 81, and the support member lifts and lowers the needle holder 81. Therefore, the hole for supporting the member (not shown) communicates with the atmosphere and the inside of the container 35, but the support member and the hole for the support member are covered with a bellows cover or the like. Thereby, the container 32 can be isolated from the atmosphere without using lubricating oil.

The raising arm 82 is a wrist-shaped member, and one end has a through hole 97 through which the screw that connects the raising arm 83 to the raising needle protrusion amount adjuster 82 (refer to FIG. 8), and the other end has a receiving and supporting lifting needle. Lift the needle at the lower end of 42. The diameter of the raising needle is only a certain value larger than the diameter of the raising needle 42, so that the raising of the needle is combined with the lower end of the raising needle 42. That is, substantially, the other end of the raising arm 83 is placed with the raising needle 42. The raising arm 83 is inserted between the needle holder 81 and the raising needle 42, and the needle holder 81 and the raising needle 42 are interlocked. Therefore, the raising needle 83 is lifted and lowered as the needle holder 81 is raised and lowered, and the raising needle 42 is raised and lowered.

Further, the three elevation arms 83 project toward the center of the needle holder 81, and a part (the other end side) is placed on the side of the ESC 33, and is housed in the elevation arm which is inserted along the elevation direction of the elevation arm 83. The receiving groove 84 (the interlocking member accommodation groove) is in the middle. The raising arm accommodation groove 84 is provided corresponding to each of the raising arms 83, and the opening length of the raising arm 83 in the lifting direction is equal to or higher than the lifting range of the raising arm 83. Thereby, the raising arm 83 can freely move up and down in the raising arm accommodation groove 84.

The ESC 33 is a raised needle receiving pocket 85 that communicates with the raising arm receiving groove 84 and opens on the placement surface of the ESC 33 in a position where the raising arm 83 accommodated in the raising arm accommodation groove 84 raises the needle hole. The raising needle receiving pocket 85 is a circular hole and is provided corresponding to each of the raising arms 83. Further, the diameter of the raising needle receiving pocket 85 is only a certain value larger than the diameter of the raising needle 42. Thus, raising the needle receiving pocket 85 can accommodate the raising needle 42.

The raising needle 42 is inserted into the raising needle of the raising arm 83 from the placement surface via the raising needle receiving pocket 85. Therefore, the raising needle 42 and the raising arm 83 are engaged and engaged in the raising arm receiving groove 84, and the raising needle 42 and the raising arm 83, that is, in conjunction with the lifting of the needle holder 81, protrude or embed from the placement surface. .

According to the wafer raising device 80, the wafer raising device 80 is disposed in the container 32 of the PM 11, and raises the needle 42 and moves the lifting needle 42 around the ESC 33 and interlocks with the needle holder 81. The member is inserted and joined in the raising arm receiving groove 84 of the ESC 33 along the lifting direction of the needle holder 81; then the lifting needle 42 is connected to the raising arm receiving groove 84 and is placed in the ESC 33. Since the surface of the elevating needle receiving pocket 85 is opened, it is not necessary to have the elevating needle accommodating hole in the communicating container 32 and the atmosphere in the opening of the ESC 33, and it is not necessary to use lubricating oil. Therefore, when a CVD process is applied to the wafer, film formation failure can be prevented. Further, the raising needle 42 is freely protruded on the placement surface, whereby the wafer can be stably raised on the placement surface.

In the wafer raising device 80, the amount of protrusion of the three raising pins 42 from the placement surface is determined by the needle holder 81. Therefore, when the needle holder 81 is tilted, the amount of protrusion of the three raising pins 42 may be uneven. And there is no way to stabilize the wafer. In order to cope with this, the wafer raising device 80 is provided with a raised needle protrusion amount adjuster 82 as follows.

Fig. 7 is a view showing a schematic configuration of a raised needle projection amount adjuster in Fig. 6; (A) is an exploded perspective view, and (B) is an enlarged perspective view of a height adjusting block in the raised needle projection amount adjuster.

In the seventh (A) and (B), the raising needle protrusion amount adjuster 82 is provided with a height adjusting block 86 (block), a block fixing nut 87 (nut member), and a block angle fixing washer. 88 (rotation gauge member), flat washer 89, and spring washer 90, and height gauge bolt 91 (height gauge member).

The height adjusting block 86 is a square columnar member, and male corners are formed at each corner portion of the side surface. Further, the height adjusting block 86 has a screw hole 92 pierced therein, and a bolt 98 is screwed to connect the raising arm 83 to the raising needle protrusion amount adjuster 82. Under the height adjusting block 86, the perforation is useful for screwing the height. The screw hole 95 of the bolt 91 is specified (refer to Fig. 8).

The block fixing nut 87 has a female screw that is screwed to the male screw of the height adjusting block 86. The inner peripheral shape of the block angle fixing washer 88 is a square formed by the side opposite to the side surface of the height adjusting block 86; the outer peripheral shape is also fixed to the washer locking groove 93 by the block angle of the needle holder 81 as will be described later. The width, with a slightly square that is only a small width of a particular value.

The needle holder 81 has a block angle fixing washer locking groove 93 and a height adjusting block receiving pocket 94 at a position where each of the raising needle protrusion amount adjusters 82 is disposed. The block angle fixing washer locking groove 93 is a shallow groove formed on the surface of the needle holder 81 from the outer circumference of the needle holder 81 toward the inner circumference; the width from the outer circumference to the inner circumference is average. Further, the block angle fixing the width of the washer locking groove 93 is only a certain value larger than the square width exhibited by the block angle fixing washer 88. The height adjusting block receiving pocket 94 is provided by perforating the bottom of the block angle fixing washer locking groove 93, and has a bottomed cylindrical hole; the diameter thereof is only larger than the effective diameter of the male thread of the height adjusting block 86 by a specific value. . Further, a bottom portion of the height adjusting block receiving pocket 94 is provided with a through hole 96 through which the height gauge bolt 91 can pass (refer to Fig. 8).

Fig. 8 is a view showing a construction method of the raising needle projection amount adjusting method using the raising needle projection amount adjuster of Fig. 7. This method is applied to all of the three raised needle protrusion amount adjusters 82 provided in the wafer raising apparatus 80. However, only one raising needle protrusion amount adjuster 82 will be described below.

First, the lower portion of the height adjusting block 86 is housed in the height adjusting block receiving pocket 94 of the needle holder 81, and at the same time, the flat washer 89 and the elastic washer 90 are sandwiched from the lower side of the needle holder 81, and the height is standardized. The plug 91 is inserted into the through hole 96 at the bottom of the height adjusting block receiving pocket 94 (Fig. 8(A)).

Next, the screw hole 95 below the height adjusting block 86 and the height gauge bolt 91 are screwed together. At this time, the amount of screwing is adjusted so that the distance from the head of the height gauge bolt 91 to the height adjustment block 86 corresponds to the desired amount of protrusion of the lift needle. Thereafter, the height adjusting block 86 is fitted into the joint block angle fixing washer 88 (Fig. 8(B)), so that the block angle fixing washer 88 is lowered to the lower side in the figure as it is, and the block angle fixing washer 88 is accommodated at the block angle. The gasket is locked to the groove 93. At this time, even if the block angle fixing washer 88 is to be rotated in the block angle fixing washer locking groove 93, the side wall of the block angle fixing washer locking groove 93 will contact either side of the outer circumference of the block angle fixing washer 88, so the block angle fixing washer 88 does not rotate in the block angle fixing washer locking groove 93. That is, the block angle fixing washer locking groove 93 locks the block angle fixing washer 88.

Next, the height adjusting block 86 is screwed to the block fixing nut 87. At this time, the height adjusting block 86 also rotates by the tightening torque of the block fixing nut 87. However, each side of the height adjusting block 86 is in contact with each side of the inner circumference of the block angle fixing washer 88. Further, since the block angle fixing washer 88 is locked by the block angle fixing washer locking groove 93 as described above, the height adjusting block 86 does not rotate. That is, the block angle fixing washer 88 regulates the rotation of the height adjusting block 86 to the needle holder 81 (Fig. 8(C)). Therefore, even if the block fixing nut 87 is screwed to the height adjusting block 86, the height adjusting block 86 does not rotate, so the distance from the head of the height gauge bolt 91 to the height adjusting block 86 does not change. .

Thereafter, when the block fixing nut 87 is seated on the needle holder 81 via the block angle fixing washer 88, the reaction force (upward force in the drawing) received by the block fixing nut 87 from the needle holder 81 is via The height adjustment block 86 is transmitted to the height gauge bolt 91 such that the head of the height gauge bolt 91 is seated under the needle holder 81 by the flat washer 89 and the elastic washer 90, and the height adjustment block 86 is passed through the height gauge bolt 91. The block fixing nut 87 is fixed to the needle holder 81 (Fig. 8(D)). At this time, the height from the needle holder 81 of the height adjustment block 86 is specified by the distance from the head of the height gauge bolt 91 to the height adjustment block 86. Therefore, by adjusting the distance from the head of the height gauge bolt 91 to the height adjustment block 86, the height of the height adjustment block 86 from the needle holder 81 can be adjusted.

Next, the bolt 98 is screwed to the screw hole 92 of the height adjusting block 86 via the through hole 97 at one end of the raising arm 83 (Fig. 8(E)).

The head of the bolt 98 is seated on the raising arm 83, and the raising arm 83 is tied to the raising needle amount adjuster 82. Thereafter, the raising needle at the other end of the raising arm 83 is inserted into the lower end of the raising needle 42 (Fig. 8(F)). At this time, the amount of protrusion of the raising needle 42 from the placement surface is regulated by the position of the raising arm 83, that is, the height from the needle holder 81 by the height adjusting block 86. Therefore, the raising needle 42 is calculated from the placement surface. The amount of protrusion can be adjusted by adjusting the distance from the head of the height gauge bolt 91 to the height adjustment block 86.

If the height-adjusting amount adjuster 82 is attached, the height-adjusting block 86 is formed by being connected to the raising arm 83, and the corner-shaped corner portions are formed at the corner portions, that is, the height adjusting block 86; a height-adjusting bolt 91 having a height from the needle holder 81 by a block 86; and a block fixing nut 87 seated on the needle holder 81; and a gauge height adjustment The block 86 is fixed to the block angle of the rotation of the needle holder 81 by the block 86; therefore, the female screw of the block fixing nut 87 is screwed to the male screw of the height adjusting block 86, so that the block fixing nut 87 is seated. When the needle holder 81 is dropped, the rotation of the height adjustment block 86 can be regulated, so that the height adjustment block 86 is fixed to the needle holder 81 without changing the height from the needle holder 81. The height of the raising arm 83 from the needle holder 81 can be adjusted more easily and surely, so that the amount of protrusion of the raising needle 42 from the placement surface can be adjusted.

Further, the wafer raising device 80 has an elevated needle protrusion amount adjuster 82 on the needle holder 81, that is, around the ESC 33, which can adjust the amount of protrusion of the raising needle 42 from the placement surface, thereby adjusting each lifting The height of the high needle 42 from the placement surface can be used to stabilize the wafer on the placement surface. At the same time, it is not necessary to arrange the elevation needle protrusion adjuster directly under the ESC33, so it is not necessary to dig a large hole in the ESC33, so it can be used in ESC33. A refrigerant chamber 99 or an electrode plate 35 is housed to stably apply a COR treatment to the substrate.

Further, in addition to the processing chamber, the PM 12 of the CVD processing apparatus 10 of Fig. 1 further includes a PHT reaction chamber top cover (not shown) that separates the inside of the processing chamber from the external environment and is a cover for the free switch, and is disposed in the reaction chamber. It serves as a platform (not shown) for placing the wafer placement table.

The top cover of the PHT reaction chamber is provided with a sheet heater of silicone rubber. Further, a side heater (not shown) is disposed in the side wall of the reaction chamber, and the crucible heater controls the wall surface temperature of the side wall of the reaction chamber to 25 to 80 °C. Thereby, it is possible to prevent the reaction by-product from adhering to the side wall of the reaction chamber, thereby preventing generation of particles due to the attached reaction by-product, and prolonging the cleaning period of the reaction chamber.

Moreover, the platform is equipped with a platform heater, which will directly heat the wafer placed on the platform to 100-200 ° C, preferably about 135 ° C, for a minimum of 1 minute. In addition, the outdoor periphery of the reaction of PM12 is covered with a heat shield.

Fig. 9 is a view showing a schematic configuration of a system controller in the CVD processing apparatus of Fig. 1.

In Fig. 9, the system controller includes an EC (Equipment Controller device controller) 100, and a plurality of, for example, three MCs 101, 102, and 103, and a switching hub 104 that connects the EC 100 and the MCs 101, 102, and 103. The system controller is connected to the PC 106 as an MES (Manufacturing Execution System) from the EC 100 via a LAN (Local Area Network) 105, and manages the manufacturing process of the entire plant in which the CVD processing apparatus 10 is installed. The MES system is linked to the system controller to feed back the real-time information about the project in the plant to the backbone business system (not shown), and to judge the project based on the overall load of the plant.

The EC 100 is an integrated control unit that controls the overall operation of the CVD processing apparatus 10 by the MCs 101, 102, and 103. In addition, the EC100 has a CPU, a RAM, an HDD, etc., wherein the CPU cooperates with a menu of a wafer processing method specified by a user, that is, a program corresponding to the recipe, and sends control signals to the MC 101, 102, and 103, thereby controlling Actions such as PM11~14, TM15 and LM16.

The switching hub 104 cooperates with the control signal from the EC 100 to switch the MC that is the connection destination of the EC 100.

The MCs 101, 102, and 103 are control units that control the operations of the PMs 11 to 14, TM15, and LM16. The MCs 101, 102, and 103 also have a CPU, a RAM, an HDD, and the like, and transmit control signals to an end device to be described later. Further, the system controller of the CVD processing apparatus 10 has MCs corresponding to the number of modules in order to control the respective modules of the CVD processing apparatus 10, but FIG. 9 shows that there are three MCs.

The MCs 101, 102, and 103 are connected to the respective I/O (input and output) modules 109, 110, and 111 via the DIST (Distribution Distribution) board 107 via the GHOST network 108, respectively. The GHOST network 108 is a network realized by an LSI called a GHOST (General High-Speed Optimum Scalable Transceiver) which is mounted on an MC board provided by the MC. The GHOST network 108 can connect up to 31 I/O modules, while the GHOST network 108MC is equivalent to the master (Master), and the I/O module is equivalent to the slave (Slave).

The I/O module 109 is composed of a plurality of I/O units 112 connected to respective components of the PM 11 (hereinafter referred to as "terminal devices"), and performs control signals for the respective end devices and the respective end devices. The transmission of the output signal. In the I/O module 109, the terminal device connected to the I/O unit 112 corresponds to each component of the PM 11, that is, the gas box 21, the ECS power source 22, the APC penalty 24, the TMP25, the DP77, and the hydrogen fluoride gas. Each of the supply system 46, the ammonia supply system 47, and the valve system.

Further, since the I/O modules 110 and 111 have the same structure as the I/O module 109, the description thereof will be omitted.

Further, each GHOST network 108 is also connected to an I/O board (not shown) that controls the input and output of the digital signal, the analog signal, and the serial signal of the I/O unit 112.

In the CVD processing apparatus 10, when the COR processing is executed, the CPU of the EC 100 cooperates with the I/O unit 112 in the hub 104, the MC 101, the GHOST network 108, and the I/O module 109 in accordance with the program corresponding to the processing. A control signal is sent to each end device of the PM 11 to perform COR processing on the PM 11.

In the system controller of FIG. 9, instead of directly connecting the plurality of terminal devices to the EC 100, the I/O portion 112 to which the plurality of terminal devices are connected is modularized to constitute an I/O module. The group is connected to the EC 100 via the MCs 101, 102, 103 and the switching hub 104, so that the communication system can be simplified.

Moreover, the control signal sent by the CPU of the EC100 includes an address of the I/O unit 112 connected to the desired end device, and an address of the I/O module including the I/O unit 112, so switching The hub 104 refers to the address of the I/O module in the control signal, and the GHOST of the MC 101, 102, and 103 refers to the address of the I/O unit 112 in the control signal, thereby switching the hub 104 or MC 101, 102, and 103. There is no need to inquire the CPU for the control signal transmission target, so that the smooth control of the control signal can be realized.

Moreover, in the COR process, the MC 101 monitors the PM 11 via the I/O unit 112 in the GHOST network 108 and the I/O module 109. When a specific error condition is detected, the PM 11 is prohibited from being carried into the wafer. The required internal lock (I/L, Inter-Lock) signal is sent to the EC 100 via the switching hub 104. The EC 100 that has received the internal lock signal transmits a prohibition signal for carrying in the wafer to the MC (in the figure, MC103) that controls the operation of the TM 15 via the switching hub 104. The MC103 that has received the wafer carry-in inhibit signal controls the operation of the terminal device for wafer loading, and stops the wafer loading of the PM11.

As described above, although the PM 11 has three lift pins 42, the number of the lift pins 42 is not limited thereto, and it is preferably four or more. In this way, it is safer to raise the wafer.

Further, the PM including the wafer raising device 80 is not limited to the PM to which the COR process is applied to the wafer, and may be a PM to which any treatment is applied.

Further, the height adjusting block 86 is a quadrangular columnar member, but the shape of the height adjusting block 86 is not limited thereto, and may be at least a polygonal columnar member. At this time, the inner circumferential shape of the block angle fixing washer 88 may be changed to a polygonal shape that matches the shape of the height adjusting block 86.

Next, a substrate processing apparatus according to a second embodiment of the present invention will be described.

In the present embodiment, the structure or operation is basically the same as that of the above-described first embodiment, and only the structure of the wafer raising device is different from that of the first embodiment. Therefore, the description of the structure and function of the repetition will be omitted, and the description of the different structures and operations will be made below.

FIG. 10 is a view showing a schematic configuration of a wafer raising apparatus disposed in a PM as a substrate processing apparatus according to a second embodiment of the present invention; (A) is a plan view of the apparatus, and (B) is a (A) A section along the line C-C.

In FIGS. 10(A) and (B), the wafer raising device 120 (substrate raising device) is provided with an annular needle holder 121 (elevating member) disposed in a container of the reaction chamber surrounding the ESC 113. And are equally arranged along the circumferential direction of the needle holder 121, and are connected to the three elevation arms 123 of the needle holder 121 via three elevation needle protrusion amount adjusters 122 (projecting amount adjustment mechanisms) which will be described later ( The interlocking member); and the three raising pins 42 placed on each of the raising arms 123 and the round bar members. Here, the constituent elements of the wafer raising device 120, that is, the needle holder 121, the raising needle protrusion amount adjuster 122, the raising arm 123, and the raising pin 42, are disposed in the container, so that the wafer is resultant. The lifting device 120 is disposed in the container.

The needle holder 121 is moved in the up and down direction in FIG. 10(B), that is, ascending and descending. The raising arm 123 is a wrist-shaped member, and has a through hole 123b at an end portion 123a (refer to FIG. 11) through which the adjuster assembly bolt 127 that connects the raising arm 123 to the raising needle protrusion amount adjuster 122 is penetrated; The lower end of the raising needle 42 is placed at one end. Further, the end portion 123a of the raising arm 123 has a quadrangular shape in plan view, and the corner portions of the four-corner shape are cross-sectioned. The raising arm 123 is inserted between the needle holder 121 and the raising needle 42 to interlock the needle holder 121 and the raising needle 42. Thereby, the raising arm 123 is lifted and lowered as the needle holder 121 is raised and lowered, and the raising needle 42 is raised and lowered.

Further, the three elevation arms 123 project toward the center of the needle holder 121, and a part (the other end side) is placed on the side of the ESC 113, and is housed in the elevation arm that is inserted along the elevation direction of the elevation arm 123. The receiving groove 124 (the interlocking member accommodation groove) is in the middle. The raising arm receiving groove 124 is provided corresponding to each of the raising arms 123, and the opening length of the raising arm 123 in the lifting direction is equal to or higher than the lifting range of the raising arm 123. Therefore, the raising arm 123 can freely move up and down in the raising arm accommodation groove 124.

The ESC 113 has a raising needle receiving hole 125 that communicates with the raising arm receiving groove 124 and is opened on the placement surface of the ESC 113 at a position opposite to the other end portion of the raising arm 123 housed in the raising arm accommodation groove 124. The raising needle receiving hole 125 is a circular hole and is provided corresponding to each raising arm 123. Further, the diameter of the raising needle receiving pocket 125 is only a certain value larger than the diameter of the raising needle 42. Thus, raising the needle receiving pocket 125 can accommodate the raising needle 42.

The raising needle 42 is placed at the other end of the raising arm 123 via the raising needle receiving pocket 125. Thus, the raising needle 42 is engaged with the raising arm 123, that is, with the needle holder 121, and protrudes or is buried from the placement surface.

Fig. 11 is an exploded perspective view showing the schematic structure of the raising needle projection amount adjuster in Fig. 10.

In Fig. 11, the raising needle projection amount adjusting device 122 is provided with a height adjusting boss member 126 (height adjusting member), and an adjuster assembly bolt 127, and an elevation arm rotation stopper 128 (rotation specification member), and a plain washer. 129, 130, and two bolts 131 for the spin stopper, and a washer 132 for assembling the bolt.

The height adjusting hub member 126 has an upper portion formed of an octagonal column, and a bolt member having a lower portion formed of a screw has a through hole 133 coaxial with the central axis. The inner diameter of the through hole 133 is only a specific value larger than the diameter of the screw portion of the adjuster assembly bolt 127.

The raising arm rotation stopper 128 has a stopper wall portion 128a that exhibits an L shape at an arrow angle B of the arrow, and a protruding portion 128b that protrudes perpendicularly to the arrow angle B direction from the stopper wall portion 128a. The L-shape of the stopper wall portion 128a is suitable for raising the square shape of the end portion 123a of the arm 123. That is, the stopper wall portion 128a and the end portion 123a have a complementary relationship at an arrow angle B. Further, each side of the L-shape of the stopper wall portion 128a is in contact with two of the side faces of the octagonal column portion of the height adjusting boss member 126. That is, the shape of the upper portion of the height adjusting hub member 126 (octagonal column shape) is engaged with the L shape of the stopper wall portion 128a. The protruding portion 128b has two through holes 128c. The inner diameter of the through hole 128c is larger than the diameter of the screw portion of the bolt 131 for the rotation preventing stopper by a specific value.

The adjuster assembly bolt 127 is operated in conjunction with the assembly bolt washer 132, and the washer 129, the lift arm 123, the height adjustment hub member 126, the needle support 121, and the washer 130 are mutually coupled. The length of the screw portion of the adjuster assembly bolt 127 is longer than the total thickness of the washer 129, the lift arm 123, the height adjusting hub member 126, the needle holder 121, and the washer 130.

The needle holder 121 has a hub member screw hole 121a and two screw holes 121b for the rotation stopper bolt 131 at a position where each of the elevation needle protrusion amount adjusters 122 is disposed. The hub member screw hole 121a is screwed to the screw portion of the height adjustment boss member 126. Further, each of the screw holes 121b is screwed to the screw portion of the rotation stopper bolt 131.

Fig. 12 is a view showing a construction method of the raising needle projection amount adjusting method using the raising needle projection amount adjuster of Fig. 11. This method is applied to all of the three elevated needle protrusion amount adjusters 122 provided in the wafer raising apparatus 120. However, only one raising needle protrusion amount adjuster 122 will be described below.

First, the hub member screw hole 121a and the screw portion of the height adjusting hub member 126 are screwed together, whereby the height adjusting hub member 126 is coupled to the needle holder 121. At this time, the amount of protrusion of the height adjusting boss member 126 from the needle holder 121 is adjusted by the screwing amount of the screw portion 121a of the hub member and the screw portion of the height adjusting hub member 126. Then, the end portion 123a of the raising arm 123 and the washer 129 are placed on the connected height adjusting boss member 126, and the hub member hole 121a, the through hole 133, the through hole 123b, and the washer 129 are arranged in a straight line. on. Next, the screw portion of the adjuster assembly bolt 127 is inserted into the hole of the washer 129, the through hole 123b, the through hole 133, and the screw hole 121a for the hub member from above.

Thereafter, the washer portion of the adjuster assembly bolt 127 that protrudes from the back surface of the needle holder 121 is fitted with the washer 130, and the bolt washer 132 is screwed to the screw portion (Fig. 12(C)).

Then, the rotation preventing stopper bolts 131 are inserted into the respective through holes 128c of the protruding portions 128b of the raising arm rotation preventing device 128, and the screw portions of the rotation preventing stopper bolts 131 projecting from the back surface of the protruding portion 128b are screwed to the needles. The screw hole 121b of the holder 121. Thereby, the raising arm rotation stopper 128 can be contracted to the needle holder 121. Further, at this time, both sides of the L-shape of the stopper wall portion 128a touch the two sides of the square shape of the end portion 123a of the raising arm 123, and the two sides of the side surface of the octagonal column portion of the height adjusting boss member 126. . Thereafter, the adjuster assembly bolt 127 is locked by a torque wrench (not shown) or the like, and the washer 129, the raising arm 123, the height adjusting hub member 126, the needle holder 11, and the washer 130 are mutually coupled. At this time, the tightening torque of the adjuster assembly bolt 127 is transmitted to the raising arm 123 and the height adjusting hub member 126, and the raising arm 123 and the height adjusting hub member 126 are at the adjuster assembling bolt 127. It is intended to rotate near the axis. However, as described above, both sides of the L-shape of the stopper wall portion 128b in the raising arm rotation stopper 128 may touch both sides of the quadrangular shape of the end portion 123a of the raising arm 123, and the octagonal column of the height adjusting boss member 126. The two side faces of the side of the portion do not rotate the raising arm 123 and the height adjusting hub member 126. That is, the raising arm rotation stopper 128 regulates the rotation of the raising arm 123 and the height adjusting boss member 126 to the needle holder 121 (Fig. 12(C)).

Thereafter, the other end of the raising arm 123 is placed at the lower end of the raising needle 42 (Fig. 12(D)). At this time, the amount of protrusion of the raising needle 42 from the placement surface is regulated by the amount of protrusion of the raising arm 123 from the needle holder 121, that is, the amount of protrusion from the needle holder 121 by the height adjusting hub member 126. Therefore, the amount of protrusion of the raising needle 42 from the placement surface is adjusted by adjusting the amount of protrusion of the height adjusting hub member 126 from the needle holder 121, that is, adjusting the screw for the hub member 121a and the height adjusting hub member 126. The amount of screwing in the part can be adjusted.

If the needle protrusion adjuster 122 is raised, it has an elevation arm rotation stopper 128 which is connected to the needle holder 121 and has an L shape which is complementary to the square shape of the end portion 123a of the elevation arm 123. a wall portion 128a; and a height adjusting hub member 126 coupled to the needle holder 121 and having an end portion 123a of the raising arm 123; and an adjuster assembly bolt 127 which mutually engages the raising arm 123 and height adjustment The hub member 126 and the needle holder 121 are coupled to the needle holder 121, and the end portion 123a of the raising arm 123 is placed on the height adjusting hub member 126, and then the bolt is assembled by the adjuster. When the raising arm 123, the height adjusting hub member 126, and the needle holder 121 are engaged with each other, the rotation of the raising arm 123 to the needle holder 121 can be regulated. Further, by adjusting the amount of protrusion of the height adjusting boss member 126 from the needle holder 121 (the amount of screwing of the screw portion of the hub member screw hole 121a and the height adjusting hub member 126), the raising arm 123 can be adjusted. The height from the needle holder 121. As a result, the amount of protrusion of the raising needle 42 from the placement surface can be easily and surely adjusted.

Further, since both sides of the L-shaped shape of the stopper wall portion 128a are in contact with two of the side faces of the octagonal column portion of the height adjusting boss member 126, the rotation of the needle holder 121 by the height adjusting boss member 126 can be regulated. .

Further, the PM provided with the wafer raising apparatus 120 is not limited to the PM to which the COR processing is applied to the wafer, and may be a PM to which any treatment is applied.

Further, although the end portion 123a of the raising arm 123 has a square shape, the shape of the end portion 123a is not limited thereto, and at least the shape complementary to the shape of the stopper wall portion 128a of the raising arm rotation stopper 128 is can. Further, the shape of the upper portion of the height adjusting hub member 126 is not limited to the octagonal column shape, and may be at least a shape that is engaged with the shape of the stopper wall portion 128a of the raising arm rotation preventing device 128.

In the above-described CVD processing apparatus 10, the substrate to be processed is a substrate for a semiconductor device, but the substrate that can be processed is not limited thereto, and may be, for example, an LCD (Liquid Crystal Display) or an FPD (Flat Panel Display). Glass substrate

10. . . CVD processing unit

11~14. . . PM

15. . . TM

16. . . LM

17, 18. . . LLM

19. . . FOUP placement table

20. . . Locator

twenty one. . . Gas box

twenty two. . . ECS power supply

twenty three. . . Reaction chamber

twenty four. . . APC valve

25. . . TMP

26. . . Exhaust pipe

27. . . trap

28. . . ESC cooler

29. . . Module temperature control unit

30. . . frame

31. . . Reaction chamber top cover

32. . . container

33. . . ESC

34. . . Shower head

35. . . Electrode plate

36. . . Lower part

37. . . Upper department

38. . . First buffer reaction chamber

39. . . Second buffer reaction chamber

40, 41. . . Gas vent

42. . . Raise the needle

43. . . Wafer locking recess

44. . . Move out of the entrance

45. . . gate

46. . . Hydrogen fluoride gas supply system

47. . . Ammonia supply system

48~50, 64, 65. . . Inlet tube

51, 52, 55~58, 66, 67, 70~73. . . Branch tube

53, 54, 59, 60, 68, 69, 74. . . MFC

61, 76. . . Vacuum extraction tube

62, 75. . . Mixing tube

63, 79. . . Heater

77. . . DP

78. . . Bypass

80, 120. . . Wafer raising device

81, 121. . . Needle support

82, 122. . . Raise the needle amount adjuster

83, 123. . . Raise the arm

84, 124. . . Raising arm

85, 125. . . Raise the needle

86. . . Height adjustment block

87. . . Block fixing nut

88. . . Block angle fixing washer

89. . . Flat Washers

90. . . Elastic washer

91. . . Height gauge bolt

92, 95. . . Screw hole

93. . . Block angle fixed washer locking groove

94. . . Height adjustment block

96, 97. . . Through hole

98. . . bolt

99. . . Refrigerant reaction chamber

100. . . EC

101, 102, 103. . . MC

104. . . Switch hub

105. . . LAN

106. . . PC

107. . . DIST埠

108. . . GHOST network

109, 110, 111. . . I/O module

112. . . I/O Department

121a. . . Bolt hole for hub member

121b. . . Screw hole

123a. . . Ends

123b, 133. . . Through hole

126. . . Height adjustment hub member

127. . . Adjuster assembly bolt

128. . . Raise arm rotation preventer

128a. . . Blocker wall

128b. . . Protruding

129, 130. . . washer

131. . . Rotary blocker bolt

132. . . Assembly bolt washer

[Fig. 1] is a plan view showing a schematic configuration of a CVD processing apparatus as a substrate processing apparatus according to the present embodiment.

[Fig. 2] Fig. 1 is a perspective view showing a schematic structure of a PM to which a COR process is applied to a wafer.

[Fig. 3] Fig. 2 is a cross-sectional view showing a schematic structure of a reaction chamber.

[Fig. 4] Fig. 2 is a piping diagram showing a gas supply system of a gas box.

Fig. 5 is a piping diagram showing an exhaust system in the PM of Fig. 2;

Fig. 6 is a view showing a schematic structure of a wafer raising device disposed in a reaction chamber in Fig. 3; (A) is a plan view of the device in the arrow angle A of Fig. 3, and (B) is in (A) A cross-sectional view along line B-B.

[Fig. 7] Fig. 7 is a view showing a schematic configuration of a raised needle projection amount adjuster in Fig. 6; (A) is an exploded perspective view, and (B) is an enlarged perspective view of a height adjusting block in the raised needle projection amount adjuster.

[Fig. 8] (A) to (F) show the drawings of the method of adjusting the raising needle projection amount using the raising needle projection amount adjuster of Fig. 7.

[Fig. 9] Fig. 9 is a view showing a schematic configuration of a system controller in the CVD processing apparatus of Fig. 1.

[10] A substrate processing apparatus according to a second embodiment of the present invention is a diagram showing a schematic structure of a wafer raising apparatus disposed in a PM; (A) is a plan view of the apparatus, and (B) is a (A) A section along the line C-C.

[Fig. 11] is an exploded perspective view showing a schematic structure of a raised needle protrusion amount adjuster in Fig. 10.

[Fig. 12] (A) to (D) show the drawings of the method for adjusting the amount of protrusion of the raising needle using the raising needle protrusion adjuster of Fig. 11.

33. . . ESC

42. . . Raise the needle

80. . . Wafer raising device

81. . . Needle support

82. . . Raise the needle amount adjuster

83. . . Raise the arm

84. . . Raising arm

85. . . Raise the needle

Claims (8)

A substrate processing apparatus includes a COR processing module that applies a COR (chemical oxide removal) treatment to a substrate, and a CVD processing module that applies a CVD (Chemical Vapor Deposition) treatment to the substrate, and connects the COR processing module And a transport module for transporting the substrate by the CVD processing module; wherein the COR processing module includes a reaction chamber for accommodating the substrate, and a placement table disposed in the reaction chamber to place the substrate, and the above a substrate raising device for raising the substrate; the substrate raising device is disposed in the reaction chamber; the substrate lifting device has a rod-shaped elevation needle, and a lifting member that moves up and down around the placing table, and An interlocking member that interlocks the raising pin with the lifting member; the placing table has a linking member receiving groove that is bored along the lifting and lowering direction of the lifting member, and accommodates at least a part of the linking member, and communicates with the linking member Storing the groove, and placing the opening surface of the substrate in the placing table, and accommodating the raising needle of the raising needle The lifting hole is placed in the interlocking member in the interlocking member receiving groove; and the lifting member has a protruding amount adjusting mechanism that can adjust a protruding amount of the raising pin from the placing surface. The substrate processing apparatus according to claim 1, wherein the protrusion amount adjustment mechanism is coupled to the linkage structure a member having a polygonal columnar shape having at least a part of a side surface at the same time; and a predetermined member defining a height of the block from the lifting member; and a female thread having a screw thread with the male thread of the block, a nut member seated on the elevating member; and a rotation specification member that regulates rotation of the block member to the elevating member. The substrate processing apparatus according to claim 1, wherein the interlocking member has an end portion having a specific shape, and the protrusion amount adjusting mechanism has a rotation regulating member having a complementary shape to the specific shape of the end portion. The shape rotation regulating portion is connected to the lifting member; and the height adjusting member is coupled to the lifting member and placed the end portion; and a bolt that connects the linking member, the height adjusting portion, and the lifting member to each other. A substrate raising device is disposed in the reaction chamber having a reaction chamber for accommodating a substrate, and a substrate processing module disposed in the reaction chamber disposed in the reaction chamber, and the substrate is raised from the placement table; The utility model has a rod-shaped raising needle, and a lifting member which is raised and lowered around the placing table, and an interlocking member for interlocking the lifting needle with the lifting member; the placing table has a lifting direction along the lifting member a connecting member accommodating groove for accommodating at least a part of the interlocking member, and a connecting groove for communicating with the interlocking member receiving groove, and placing a placement surface of the substrate in the placing table, and accommodating the raising needle receiving hole of the raising pin; The raising needle is placed in the above-mentioned interlocking member receiving groove The interlocking member includes a protrusion amount adjusting mechanism that adjusts a protrusion amount of the elevation needle from the placement surface. The substrate raising device according to claim 4, wherein the protrusion amount adjusting mechanism has a polygonal columnar member that is connected to the interlocking member and has at least a part of a side surface having a male screw; a predetermined member having a height from the lifting member; and a nut member having a female thread screwed to the male thread of the block and seated on the lifting member; and a specification of the block to the lifting member Rotating rotating gauge component. The substrate raising device according to claim 4, wherein the interlocking member has an end portion having a specific shape; and the protrusion amount adjusting mechanism has a rotation regulating member having a complementary shape to the specific shape of the end portion And a rotation regulating portion of the shape, and the height adjusting member is coupled to the lifting member and placing the end portion; and a bolt that mutually connects the linking member, the height adjusting member, and the lifting member . The substrate processing apparatus according to claim 3, wherein one of the height adjustment members has a shape that is engaged with a complementary shape of the rotation specification portion. The substrate raising device according to claim 6, wherein one of the height adjusting members has a shape that is engaged with a complementary shape of the rotation regulating portion.