CN116377413A - Process method for growing silicon film and semiconductor device - Google Patents
Process method for growing silicon film and semiconductor device Download PDFInfo
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- CN116377413A CN116377413A CN202310404491.5A CN202310404491A CN116377413A CN 116377413 A CN116377413 A CN 116377413A CN 202310404491 A CN202310404491 A CN 202310404491A CN 116377413 A CN116377413 A CN 116377413A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000006243 chemical reaction Methods 0.000 claims abstract description 97
- 239000010408 film Substances 0.000 claims abstract description 50
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims description 58
- 238000000151 deposition Methods 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000003085 diluting agent Substances 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention provides a process method for growing a silicon film and semiconductor equipment, and relates to the field of semiconductors. Process for growing a silicon thin film the process for growing a silicon thin film comprises: pretreating a substrate slice; placing the substrate slice in a reaction chamber, and adjusting the pressure of the reaction chamber to a preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr; and carrying out silicon film deposition on the substrate sheet under the condition that the reaction chamber is under the preset pressure. The deposition is carried out on the substrate under the pressure state, so that the deposition uniformity of the substrate is high, the surface smoothness of the amorphous silicon film or the polycrystalline silicon film is ensured, the thickness is uniform, obvious concave-convex fluctuation does not exist, the amorphous silicon film or the polycrystalline silicon film is tightly combined with silicon dioxide on the surface of the substrate, no clearance cavity is generated, and the process requirement is met.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a process method for growing a silicon film and semiconductor equipment.
Background
In the process of forming polycrystalline silicon or amorphous silicon thin films, a lower chamber pressure is generally required to ensure that the reaction in the reaction apparatus proceeds forward. The gas flow is required to be lower when the chamber pressure is lower to ensure the stability of the chamber pressure, otherwise the reaction is interrupted due to the large pressure fluctuation. However, too small a gas flow rate will result in SiH 4 Insufficient transport, resulting in uneven deposition and ultimately affecting film qualityAmount of the components.
Disclosure of Invention
The invention provides a process method for growing a silicon film and semiconductor equipment, which can provide proper reaction pressure, ensure normal reaction and have better deposition uniformity.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a process for growing a silicon thin film, the process comprising:
pretreating a substrate slice;
placing the substrate slice in a reaction chamber, and adjusting the pressure of the reaction chamber to a preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr;
and carrying out silicon film deposition on the substrate sheet under the condition that the reaction chamber is under the preset pressure.
In an alternative embodiment, before the step of placing the substrate sheet in the reaction chamber and adjusting the pressure of the reaction chamber to a preset pressure, the method further includes:
and adjusting the temperature in the reaction chamber to a preset temperature.
In an alternative embodiment, the silicon thin film deposition on the substrate sheet under the condition that the reaction chamber is at the preset pressure further includes:
introducing 100% SiH into the reaction chamber under the condition that the temperature of the reaction chamber is a preset temperature 4 Gas and 100% concentration of diluent gas.
In an alternative embodiment, the preset temperatures include a first preset temperature ranging from 230 ℃ to 270 ℃ and a second preset temperature ranging from 600 ℃ to 700 ℃, and the 100% concentration of SiH is introduced into the reaction chamber 4 The step of gas and 100% concentration of diluent gas further comprises:
SiH is heated at a first predetermined temperature in the reaction chamber 4 The flow rate of the gas is 70 sccm-90 sccm, and the gas is dilutedThe flow is 900 sccm-1100 sccm;
SiH is heated at a second predetermined temperature in the reaction chamber 4 The flow rate of the gas is 110sccm to 130sccm, and the flow rate of the dilution gas is 1400sccm to 1600sccm.
In an alternative embodiment, a first polar plate is disposed in the reaction chamber, and the step of depositing the silicon film on the substrate sheet under the condition of preset pressure includes:
introducing 100% concentration SiH into the reaction chamber under the condition that the reaction chamber is under the preset pressure 4 And after the gas and the dilution gas with the concentration of 100% last for at least 10 seconds, applying radio frequency to the substrate sheet through the first polar plate for 140-160 seconds so as to deposit a silicon film on the substrate sheet, wherein the radio frequency power is 60-80W.
In an optional embodiment, a second polar plate is further disposed in the reaction chamber, and before the step of placing the substrate sheet in the reaction chamber and adjusting the pressure of the reaction chamber to a preset pressure, the method further includes:
and placing the substrate sheet on the second polar plate, positioning the substrate sheet between the first polar plate and the second polar plate, and adjusting the distance between the first polar plate and the second polar plate to be 300 mils-360 mils.
In an alternative embodiment, the step of preprocessing the substrate sheet includes:
placing the substrate sheet in a nitrogen environment for later use;
or placing the substrate slice in an air environment, cleaning the substrate slice by using hydrofluoric acid solution and deionized pure water in sequence, and spin-drying the moisture of the substrate slice for later use.
In an alternative embodiment, the process for growing a silicon thin film further includes:
stopping applying radio frequency to the substrate sheet and closing a vent valve of the reaction chamber to stop introducing the SiH 4 Gas and diluent gas, opening the exhaust valve of the reaction chamber to exhaust the reaction chamberExhaust gas within the reaction chamber.
In an alternative embodiment, the process for growing a silicon thin film further includes:
and (3) introducing inert gas into the reaction chamber for at least 60 seconds, and taking out the substrate slice after the silicon film deposition, wherein the flow rate of the inert gas is 2450-2550 sccm.
In a second aspect, the present invention provides a semiconductor device applied to the process for growing a silicon thin film according to any one of the preceding embodiments, the semiconductor device comprising:
the pretreatment device is used for pretreating the substrate slice;
and the reaction chamber is used for accommodating the substrate slice and carrying out silicon film deposition on the substrate slice under the condition that the reaction chamber is under the preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr.
The technological method for growing the silicon film and the semiconductor device provided by the embodiment of the invention have the beneficial effects that: the deposition is carried out on the substrate slice under the pressure state of 720 mTorr-880, so that the deposition uniformity of the substrate slice is high, the surface smoothness of the amorphous silicon film or the polycrystalline silicon film is ensured, the thickness is uniform, no obvious concave-convex fluctuation exists, the amorphous silicon film or the polycrystalline silicon film is tightly combined with silicon dioxide on the surface of the substrate slice, no clearance cavity is generated, and the process requirement is met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of steps S100-S300 of a process for growing a silicon thin film according to an embodiment of the present invention;
FIG. 2 is a flowchart showing the substeps of step S100 of the method for growing a silicon thin film according to the embodiment of the present invention;
fig. 3 is a flowchart of a process step S201 of growing a silicon thin film according to an embodiment of the present invention;
FIG. 4 is a flowchart showing the substeps of step S300 of the method for growing a silicon thin film according to the embodiment of the present invention;
FIG. 5 is a flowchart showing the substeps of step S320 of the method for growing a silicon thin film according to the embodiment of the present invention;
fig. 6 is a flowchart of steps S100 to S600 of a process for growing a silicon thin film according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
First embodiment
The present invention provides a semiconductor device (not shown) for growing an amorphous silicon thin film or a polycrystalline silicon thin film. The semiconductor device comprises a pretreatment device, a reaction chamber and the like, wherein the pretreatment device is used for pretreating the substrate slice, and the reaction chamber is used for accommodating the substrate slice and carrying out silicon film deposition on the substrate slice under the condition that the reaction chamber is under preset pressure.
In this embodiment, the pretreatment device includes a nitrogen cabinet, and the substrate sheet may be placed in the nitrogen cabinet for standby. The pretreatment device can also comprise an air cabinet and a spin dryer, wherein the substrate slice is placed in the air cabinet and is cleaned by adopting 5% hydrofluoric acid solution for at least one minute, deionized pure water is used for at least one minute to clean the hydrofluoric acid solution on the surface of the substrate slice, and the substrate slice is placed in the spin dryer to spin-dry the moisture on the substrate slice for later use.
Of course, the pretreatment device may also include other devices, and different pretreatment modes or devices may be selected according to actual requirements, which are not limited herein.
In this embodiment, the reaction chamber is provided with a first polar plate and a second polar plate, the second polar plate is used for carrying a substrate slice, the substrate slice is located between the first polar plate and the second polar plate, radio frequency is applied to the substrate slice through the first polar plate, and reaction gas is introduced into the reaction chamber so as to deposit a silicon film on the substrate slice.
In this embodiment, since the existing substrate is generally deposited under a smaller chamber pressure, an excessive gas flow rate may cause a larger chamber pressure fluctuation to affect the deposition reaction of the substrate, while an excessive gas flow rate may cause uneven deposition.
Therefore, under the condition that the preset pressure is controlled to be 720 mTorr-880 mTorr in multiple experiments of the inventor, the two conditions can be simultaneously considered, the deposition uniformity of the substrate slice is high, the surface smoothness of the amorphous silicon film or the polycrystalline silicon film is ensured, the thickness is uniform and has no obvious concave-convex fluctuation, the amorphous silicon film or the polycrystalline silicon film is tightly combined with the lower silicon dioxide, no-clearance cavity is generated, and the process requirement is met.
Second embodiment
The invention also provides a process method for growing the silicon film, which is applied to the semiconductor device in the embodiment.
Referring to fig. 1, in the present embodiment, the process for growing a silicon thin film includes the following steps:
step S100: and preprocessing the substrate slice.
In this embodiment, the substrate is pretreated before deposition, and the substrate is preserved for standby, so as to prevent the substrate from being polluted before deposition and affecting the deposition effect.
Specifically, an N-type <110> crystal orientation single-side polished 8-inch monocrystalline silicon wafer is used, and silicon dioxide with a thickness of about 600nm is grown thereon to form a substrate sheet, which may be a finished product or manufactured by other processes, and the manufacturing of the substrate sheet is not particularly limited.
The substrate sheet may be made of a material that is resistant to high temperature and does not generate a contaminant, such as alumina, and is not particularly limited.
Step S200: placing the substrate slice in a reaction chamber, and adjusting the pressure of the reaction chamber to a preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr.
In this embodiment, the substrate sheet subjected to pretreatment is put into the chuck structure of the reaction chamber, and a robot in the reaction chamber is manually or automatically operated to transfer the substrate sheet onto the reaction susceptor in the reaction chamber. The preset pressure of the reaction chamber is set to be 720mTorr to 880mTorr so as to be deposited.
In practice, the preset pressure of the reaction chamber is typically 800mTorr.
Step S300: and carrying out silicon film deposition on the substrate sheet under the condition that the reaction chamber is under the preset pressure.
In this embodiment, the substrate sheet performs the deposition reaction in the environment with the preset pressure of 720mTorr to 880mTorr, so that the problem that the stability of the pressure of the chamber is affected due to the overlarge gas flow can be avoided, and the phenomenon of uneven deposition caused by the overlarge gas flow can be overcome.
In practical application, the preset pressure is usually 800mTorr, and the substrate slice is deposited under the pressure state, so that the deposition uniformity of the substrate slice is high, the surface smoothness of the amorphous silicon film or the polycrystalline silicon film is ensured, the thickness is uniform and has no obvious concave-convex fluctuation, the amorphous silicon film or the polycrystalline silicon film is tightly combined with silicon dioxide on the surface of the substrate slice, no clearance cavity is generated, and the process requirement is met.
Referring to fig. 2, step S100 includes sub-step S110 and sub-step S120 in parallel.
Sub-step S110: the substrate sheet was placed in a nitrogen atmosphere for standby.
In this embodiment, the prepared substrate sheet may be directly placed in the nitrogen cabinet, so that the substrate sheet is in a clean environment, and the substrate sheet is prevented from being polluted.
It is to be noted that no other treatment of the surface of the substrate sheet is necessary in this case.
Substep S120: placing the substrate in an air environment, cleaning the substrate by using hydrofluoric acid solution and deionized pure water in sequence, and spin-drying the moisture of the substrate for later use.
In this embodiment, the substrate sheet may be placed in an air cabinet, in which case, the substrate sheet is cleaned with a 5% hydrofluoric acid solution for at least one minute, then is rinsed with deionized pure water for at least one minute, and after the surface of the substrate sheet is rinsed clean, the substrate sheet is placed in a spin dryer to spin-dry the water for later use.
Referring to fig. 3, step S201 is further included before step S200: and adjusting the temperature in the reaction chamber to a preset temperature.
In this embodiment, before the substrate sheet is placed in the reaction chamber, the apparatus is prepared to wait for loading, i.e., the temperature in the reaction chamber is adjusted to a preset temperature. After the temperature in the reaction chamber reaches the preset temperature, the temperature fluctuation range in the reaction chamber is ensured not to exceed 3 ℃.
The preset temperature in this embodiment includes a first preset temperature and a second preset temperature. The first preset temperature is 230-270 ℃, and the deposition reaction is carried out at the temperature range, so that the amorphous silicon film can be deposited on the surface of the substrate slice. The second preset temperature is 600-700 ℃, and the deposition reaction is carried out under the temperature range, so that the surface of the substrate slice can be deposited with the polysilicon film.
Specifically, the first preset temperature is 250 ℃, and the second preset temperature is 650 ℃.
Referring to fig. 4, step S300 further includes step S310, step S320, and step S330:
step S310: and placing the substrate sheet on the second polar plate, positioning the substrate sheet between the first polar plate and the second polar plate, and adjusting the distance between the first polar plate and the second polar plate to be 300 mils-360 mils.
In this embodiment, the second plate serves as a base to support the substrate sheet. The first polar plate is positioned above the second polar plate and the substrate slice so as to apply radio frequency to the substrate slice.
In practice, the first plate and the second plate are typically spaced 330mils apart.
Step S320: introducing SiH with concentration of 100% into the reaction chamber under the condition that the temperature of the reaction chamber is a preset temperature 4 Gas and 100% concentration of diluent gas.
In this embodiment, siH is simultaneously introduced into the reaction chamber 4 The gas and the dilution gas play a role in dilution and avoid the influence of other introduced impurities on the progress of the deposition reaction.
In practical applications, argon with a concentration of 100% is usually selected as the diluent gas, but hydrogen or other gases may be selected as well, which is not particularly limited herein.
Referring to fig. 5, step S320 may include sub-steps S321 and S322 in parallel.
Step S321: siH is heated at a first predetermined temperature in the reaction chamber 4 The flow rate of the gas is 70sccm to 90sccm, and the flow rate of the dilution gas is 900sccm to 1100sccm.
In this embodiment, siH is applied at a temperature of 250℃in the reaction chamber 4 Under the condition that the flow rate of the gas is set to 80sccm and the flow rate of the diluent gas is set to 1000sccm, an amorphous silicon film which has higher uniformity and uniform thickness and is closely attached to the surface of the substrate can be deposited on the substrate.
Step S322: in the case of a reaction chamber having a second predetermined temperature, siH 4 The flow rate of the gas is 110sccm to 130sccm, and the flow rate of the dilution gas is 1400sccm to 1600sccm.
In this embodiment, siH is applied at a temperature of 650℃in the reaction chamber 4 Under the condition that the flow rate of the gas is set to 120sccm and the flow rate of the diluent gas is set to 1500sccm, a polysilicon film which has higher uniformity and uniform thickness and is closely attached to the surface of the substrate can be deposited on the substrate.
Step S330: introducing SiH with 100% concentration into the reaction chamber under the condition that the reaction chamber is under the preset pressure 4 After the gas and the dilution gas with the concentration of 100% last for at least 10 seconds, applying radio frequency to the substrate sheet through the first polar plate for 140-160 seconds so as to deposit the silicon film on the substrate sheet, wherein the radio frequency power is 60-80W.
In this embodiment, at least SiH is continuously fed before RF is performed 4 And (3) the gas and the diluent gas are used for 10 seconds, so that the gas flow reaches a temperature state, and the radio frequency is continuously applied to the substrate sheet through the first polar plate for about 150 seconds in the state, so that amorphous silicon or polycrystalline silicon film deposition is carried out on the substrate sheet.
Specifically, the radio frequency power can be 70W.
Referring to fig. 6, the process for growing a silicon thin film may further include step S400, where step S400 is located after step 300.
Step S400: stopping applying radio frequency to the substrate sheet and closing the vent valve of the reaction chamber to stop the introduction of SiH 4 The gas and the diluent gas open an exhaust valve of the reaction chamber to exhaust the exhaust gas in the reaction chamber.
In this embodiment, after the amorphous silicon or polysilicon film deposition of the substrate sheet is completed, the first electrode plate is stopped from applying radio frequency to the substrate sheet, and the introduction of SiH is closed at the same time 4 The valves for gas and diluent gas stop introducing gas, and the reaction waste gas in the reaction chamber is pumped out through the exhaust valve and the air pump.
Further, the process for growing a silicon thin film may further include step S500, and step S500 is located after step S400.
Step S500: and (3) introducing inert gas into the reaction chamber for at least 60 seconds, and taking out the substrate slice after the silicon film deposition, wherein the flow rate of the inert gas is 2450-2550 sccm.
In this embodiment, the inert gas is usually nitrogen, and nitrogen is introduced into the reaction chamber to drive the residual gas and particulate impurities into the exhaust pipeline and exhaust them through the pump. And then operating the mechanical arm to take out the substrate slice after the deposition is completed from the process chamber, thereby completing the film deposition.
Specifically, the flow rate of the inert gas is 2500sccm.
In summary, the embodiment of the invention provides a process method for growing a silicon film and a semiconductor device, wherein the substrate slice is deposited under the pressure state of 800mTorr, so that the deposition uniformity of the substrate slice is high, the surface smoothness of an amorphous silicon film or a polycrystalline silicon film is ensured, the thickness is uniform and has no obvious concave-convex fluctuation, the amorphous silicon film or the polycrystalline silicon film is tightly combined with silicon dioxide on the surface of the substrate slice, no clearance cavity is generated, and the process requirement is met.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A process for growing a silicon thin film, comprising:
pretreating a substrate slice;
placing the substrate slice in a reaction chamber, and adjusting the pressure of the reaction chamber to a preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr;
and carrying out silicon film deposition on the substrate sheet under the condition that the reaction chamber is under the preset pressure.
2. The method of claim 1, wherein the step of placing the substrate sheet in a reaction chamber and adjusting the pressure of the reaction chamber to a predetermined pressure is preceded by the step of:
and adjusting the temperature in the reaction chamber to a preset temperature.
3. The process for growing a silicon thin film according to claim 2, wherein the silicon thin film deposition of the substrate sheet under the condition that the reaction chamber is at the preset pressure further comprises:
introducing 100% SiH into the reaction chamber under the condition that the temperature of the reaction chamber is a preset temperature 4 Gas and 100% concentration of diluent gas.
4. A process for growing a silicon thin film according to claim 3, wherein the preset temperature comprises a first preset temperature of 230 ℃ to 270 ℃ and a second preset temperature of 600 ℃ to 700 ℃, and the 100% concentration of SiH is introduced into the reaction chamber 4 The step of gas and 100% concentration of diluent gas further comprises:
in case the temperature of the reaction chamber is a first preset temperature，SiH 4 The flow rate of the gas is 70 sccm-90 sccm, and the flow rate of the diluent gas is 900 sccm-1100 sccm;
SiH is heated at a second predetermined temperature in the reaction chamber 4 The flow rate of the gas is 110sccm to 130sccm, and the flow rate of the dilution gas is 1400sccm to 1600sccm.
5. A process for growing a silicon thin film according to claim 3, wherein a first electrode plate is disposed in the reaction chamber, and the step of depositing the silicon thin film on the substrate sheet under a predetermined pressure comprises:
introducing 100% concentration SiH into the reaction chamber under the condition that the reaction chamber is under the preset pressure 4 And after the gas and the dilution gas with the concentration of 100% last for at least 10 seconds, applying radio frequency to the substrate sheet through the first polar plate for 140-160 seconds so as to deposit a silicon film on the substrate sheet, wherein the radio frequency power is 60-80W.
6. The method of claim 5, wherein a second electrode plate is further disposed in the reaction chamber, and the step of placing the substrate sheet in the reaction chamber and adjusting the pressure of the reaction chamber to a predetermined pressure is preceded by the step of:
and placing the substrate sheet on the second polar plate, positioning the substrate sheet between the first polar plate and the second polar plate, and adjusting the distance between the first polar plate and the second polar plate to be 300 mils-360 mils.
7. The method of claim 1, wherein the step of pre-treating the substrate sheet comprises:
placing the substrate sheet in a nitrogen environment for later use;
or placing the substrate slice in an air environment, cleaning the substrate slice by using hydrofluoric acid solution and deionized pure water in sequence, and spin-drying the moisture of the substrate slice for later use.
8. The process for growing a silicon thin film according to claim 1, further comprising:
stopping applying radio frequency to the substrate sheet and closing a vent valve of the reaction chamber to stop introducing the SiH 4 And the gas and the diluent gas open an exhaust valve of the reaction chamber to exhaust the exhaust gas in the reaction chamber.
9. The process for growing a silicon thin film according to claim 8, further comprising:
and (3) introducing inert gas into the reaction chamber for at least 60 seconds, and taking out the substrate slice after the silicon film deposition, wherein the flow rate of the inert gas is 2450-2550 sccm.
10. A semiconductor device, characterized in that it is applied to the process for growing a silicon thin film according to any one of claims 1 to 9, comprising:
the pretreatment device is used for pretreating the substrate slice;
and the reaction chamber is used for accommodating the substrate slice and carrying out silicon film deposition on the substrate slice under the condition that the reaction chamber is under the preset pressure, wherein the preset pressure is 720 mTorr-880 mTorr.
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