CN112216636A - Wafer epitaxial reaction equipment - Google Patents
Wafer epitaxial reaction equipment Download PDFInfo
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- CN112216636A CN112216636A CN202010881036.0A CN202010881036A CN112216636A CN 112216636 A CN112216636 A CN 112216636A CN 202010881036 A CN202010881036 A CN 202010881036A CN 112216636 A CN112216636 A CN 112216636A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 121
- 238000006073 displacement reaction Methods 0.000 claims abstract description 91
- 238000000407 epitaxy Methods 0.000 claims abstract description 14
- 238000012544 monitoring process Methods 0.000 claims abstract description 13
- 230000001960 triggered effect Effects 0.000 claims abstract description 12
- 230000008093 supporting effect Effects 0.000 claims description 55
- 238000012546 transfer Methods 0.000 claims description 9
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- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
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- 239000002184 metal Substances 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The application discloses wafer epitaxy reaction equipment includes: the conveying blade is used for conveying the wafer to a first designated position in the reaction chamber and taking the wafer away from the first designated position after the growth of the wafer is finished; a wafer lifting device and a displacement sensor are arranged in the reaction chamber; the wafer lifting device is used for driving the wafer to move between a first designated position and a second designated position, and carrying the wafer for epitaxial growth; the displacement sensor is used for monitoring position data of the wafer at the second appointed position; the controller is used for judging whether the wafer generates transverse displacement according to the position data; triggering an alarm when the judgment result is yes; the controller is also used for adjusting the first designated position according to the position data when the alarm is triggered so as to enable the first designated position and the second designated position to be vertically corresponding. The method and the device can ensure that the wafer lifting device can place the wafer on the designated position without position deviation, thereby reducing the reject ratio of the wafer when the epitaxial layer grows in the epitaxial reaction equipment.
Description
Technical Field
The application belongs to the technical field of silicon wafer manufacturing, and particularly relates to a wafer epitaxial reaction device.
Background
In the epitaxial layer production process, the wafer is grown with the epitaxial layer in the reaction chamber of the epitaxial reaction equipment. In the process, the wafer is required to be arranged on a designated position in the reaction chamber for epitaxial layer growth by means of a wafer lifting device in the reaction chamber. When the position for placing the wafer deviates from the designated position, the thickness of the grown epitaxial layer is uneven, which affects the quality of the wafer.
In the related art, a wafer lifting device is used for supporting the wafer to perform lifting motion, so that the wafer is placed on a specified position to perform epitaxial growth. Specifically, this wafer elevating gear includes: the wafer lifting device comprises a base, a base supporting shaft, a wafer lifting shaft and a wafer lifting pin; the base is used for bearing the wafer, and the central position of the base is the designated position for arranging the wafer; the wafer lifting pin supports the wafer to do lifting movement under the supporting action of the supporting arm of the wafer lifting shaft, so that the wafer is placed on the base and is separated from the base after the epitaxial layer is grown; the base support shaft supports the base. The supporting arm of the wafer lifting shaft supports the wafer lifting pin to move up and down through a platform structure at the tail end of the supporting arm.
However, when the supporting arm of the wafer lift spindle supports the wafer lift pins for lifting movement, the wafer lift pins may tilt due to point contact between the wafer lift pins and the supporting arm of the wafer lift spindle, which may cause the wafer to be off-center when placed on the susceptor. At this time, the thickness of the epitaxial layer grown on the wafer is not uniform, which affects the quality of the wafer. Therefore, how to ensure that the wafer lifting device places the wafer on the designated position without position deviation, so as to effectively reduce the reject ratio of the wafer when growing the epitaxial layer in the epitaxial reaction equipment, is a technical problem to be solved.
Disclosure of Invention
In order to ensure that the wafer lifting device places the wafer on the assigned position and does not generate position deviation, thereby effectively reducing the reject ratio of the wafer when growing the epitaxial layer in the epitaxial reaction equipment, the application provides the wafer epitaxial reaction equipment.
The technical problem to be solved by the application is realized by the following technical scheme:
a wafer epitaxial reaction apparatus, comprising: a transfer blade, a reaction chamber and a controller; wherein,
the conveying blade is used for conveying a wafer to a first designated position in the reaction chamber and carrying the wafer away from the reaction chamber from the first designated position after the epitaxial growth of the wafer is completed;
the reaction chamber is used for providing an epitaxial growth environment for the wafer; wherein, a wafer lifting device and a displacement sensor are arranged in the reaction chamber; the wafer lifting device is used for driving the wafer to move between the first designated position and the second designated position so as to load the wafer at the second designated position for epitaxial growth; the displacement sensor is used for monitoring position data of the wafer at the second appointed position;
the controller is used for judging whether the wafer generates transverse displacement at the second appointed position according to the position data; triggering an alarm when the judgment result is yes; the controller is further configured to adjust the first designated position according to the position data when the alarm is triggered, so that the first designated position and the second designated position correspond up and down.
Optionally, the wafer lifting device includes:
the base is used for bearing the wafer;
a base support shaft located below the base, around which a plurality of base support arms are evenly arranged for supporting the base;
the wafer supporting shaft is positioned below the base, a plurality of wafer supporting arms and a plurality of wafer lifting pins are uniformly arranged around the wafer supporting shaft, one ends of the wafer lifting pins penetrate through holes in the base, and the wafer lifting pins move along the vertical direction to enable the wafer to be loaded on the base or separated from the base;
one end of the wafer supporting arm is connected with the wafer supporting shaft, the other end of the wafer supporting arm is provided with a protruding structure, and the protruding structure is provided with an opening for being connected with the wafer lifting pin; the wafer supporting arm and the protruding structure are integrally formed quartz structures.
Optionally, one end of the wafer lifting pin is used for supporting the wafer, and the other end of the wafer lifting pin is inserted into the opening of the protruding structure and is in threaded connection with the protruding structure, so that the wafer lifting pin moves along with the protruding structure.
Optionally, the reaction chamber further comprises: a top bell jar and a bottom bell jar; the wafer lifting device is positioned between the top bell jar and the bottom bell jar;
the displacement sensors are distributed above the top bell jar in the reaction chamber so as to monitor the wafer loaded on the base through the top bell jar.
Optionally, a pit is formed in the upper surface of the base, and the pit is used for bearing the wafer;
the location data includes: a distance between an edge of the wafer and an edge of the pocket.
Optionally, the displacement sensor comprises: a first displacement sensor, a second displacement sensor and a third displacement sensor; wherein,
the first displacement sensor is used for monitoring the distance at a gas injection port of the reaction chamber;
the second displacement sensor is used for monitoring the distance at the exhaust port of the reaction chamber;
the third displacement sensor is used for monitoring the distance of the slit valve of the reaction chamber.
Optionally, the controller is specifically configured to:
judging whether the wafer generates transverse displacement at the second appointed position or not according to the position data and the corresponding upper and lower limits; triggering an alarm when the judgment result is yes; adjusting the extension length and/or displacement parameters of the conveying blade according to the position data when the alarm is triggered, so that the first designated position and the second designated position are vertically corresponding to each other through the conveying blade adjusted by the extension length and/or the displacement parameters;
the displacement parameter is used for representing the displacement of the conveying blade in a preset direction; the preset direction is perpendicular to the direction of the conveying blade entering and exiting the reaction chamber.
Optionally, the vertical projection of the susceptor support arm and the vertical projection of the wafer support arm are not overlapped on the moving path of the wafer lifting pin, so that the one end of the wafer lifting pin passes through the through hole in the susceptor to be in contact with the wafer.
Optionally, the susceptor support arm is located above the wafer support arm or the susceptor support arm is located below the wafer support arm.
Optionally, the susceptor support arm and the wafer support arm are respectively inclined at a predetermined angle toward the wafer.
In the wafer epitaxial reaction equipment provided by the application, the position data of the wafer in the epitaxial growth at the second appointed position is monitored by arranging the displacement sensor in the reaction chamber, and whether the wafer generates transverse displacement at the second appointed position is judged according to the position data; and triggering alarm data when the judgment result is yes, so as to avoid the wafer epitaxial reaction equipment from continuously growing the wafer with the poor epitaxial layer. And the controller can also adjust the first designated position when the wafer is sent into the reaction chamber by the transmission blade 1 according to the position data when the alarm is triggered so as to enable the first designated position and the second designated position to be vertically corresponding, thereby avoiding the transverse displacement when the subsequent wafer is placed at the second position and reducing the reject ratio of the wafer when the epitaxial layer grows in the epitaxial reaction equipment. Compared with the current situation that the wafer epitaxial reaction equipment needs to be shut down and the reaction chamber needs to be opened to correct the transverse displacement in the prior art, the wafer epitaxial reaction equipment does not need to be shut down, and the transverse displacement can be corrected without opening the reaction chamber.
In the wafer lifting device used by the wafer epitaxial reaction equipment, one end of the wafer supporting arm is provided with a convex structure, the convex structure is provided with an opening for connecting with the wafer lifting pin, and the convex structure and the wafer supporting arm are of an integrally formed quartz structure; therefore, the wafer lifting pin is not easy to incline when moving along the vertical direction, and the wafer can be accurately placed at the center of the base, so that the thickness of the epitaxial layer grown on the wafer is uniform, and the reject ratio of the wafer when the epitaxial layer grows in the epitaxial reaction equipment is further reduced.
In the application, the wafer lifting pin can be ensured not to incline without adding other metal guide devices, and the pollution to the reaction chamber is not increased.
The present application will be described in further detail below with reference to the attached drawings.
Drawings
Fig. 1 is a schematic structural diagram of a wafer epitaxy reaction apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a wafer lifting device used in a wafer epitaxial reaction apparatus according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a displacement sensor arrangement in a reaction chamber of the wafer epitaxy reaction apparatus shown in FIG. 1;
FIG. 4 is a schematic view of the wafer lift apparatus of FIG. 2 showing the distribution of the wafer lift pins, the wafer support arm, and the susceptor support arm when at least a portion of the vertical projection of the susceptor support arm and the vertical projection of the wafer support arm overlap;
FIG. 5 is a schematic view of the wafer lift apparatus shown in FIG. 2, showing the wafer lift pins, the wafer support arm, and the susceptor support arm when the vertical projection of the susceptor support arm and the vertical projection of the wafer support arm do not overlap in the moving path of the wafer lift pins;
fig. 6 is a schematic structural diagram of another wafer lifting device used in a wafer epitaxial reaction apparatus according to an embodiment of the present disclosure;
FIGS. 7, 8 and 9 are schematic diagrams illustrating three other distributions of the wafer lift pins, the wafer support arm and the susceptor support arm when the vertical projection of the susceptor support arm and the vertical projection of the wafer support arm do not overlap on the moving path of the wafer lift pins in the wafer lift apparatus shown in FIG. 6;
fig. 10 is a schematic view of an internal structure of a reaction chamber of a wafer epitaxial reaction apparatus according to an embodiment of the present disclosure.
Reference numerals: 1-a transfer blade; 2-a reaction chamber; 3-a controller; 4-a wafer; 21-a wafer lifting device; 22-a displacement sensor; 23-top bell; 24-bottom bell; 25-a heating device; 26-a pyrometer; 211-a base; 212-base support shaft; 213-base support arm; 214-wafer support axis; 215-wafer support arm; 216-wafer lift pins; 217-fixed pins; 218-raised structures; 2121-a first support shaft; 2122-a first lifting cylinder; 2141-a second support shaft; 2142-second lifting cylinder.
Detailed Description
The present application will be described in further detail with reference to specific examples, but the embodiments of the present application are not limited thereto.
In order to ensure that the wafer lifting device places the wafer on the designated position without position deviation, and therefore the reject ratio of the wafer when the epitaxial layer grows in the epitaxial reaction equipment is effectively reduced, the embodiment of the application provides the wafer epitaxial reaction equipment. As shown in fig. 1, the wafer epitaxial reaction apparatus may include: a transfer blade 1, a reaction chamber 2, and a controller 3. Wherein,
a transfer blade 1 for transferring the wafer 4 to a first designated position within the reaction chamber 2 and for taking the wafer 4 from the first designated position away from the reaction chamber 2 after the epitaxial growth of the wafer 4 is completed.
A reaction chamber 2 for providing an epitaxial growth environment for the wafer 4; wherein, a wafer lifting device 21 and a displacement sensor 22 are arranged in the reaction chamber 2; the wafer lifting device 21 is used for driving the wafer 4 to move between a first designated position and a second designated position so as to carry the wafer 4 to carry out epitaxial growth at the second designated position; the displacement sensor 22 is used to monitor the position data of the wafer 4 at the second designated position.
In practical applications, the wafer epitaxial reaction apparatus may include a plurality of reaction chambers 2, as shown in fig. 1, each reaction chamber 2 may further include, in addition to the wafer lifting device 21 and the displacement sensor 22: a top bell 23, a bottom bell 24, a heating device 25, a pyrometer 26, etc. The top bell jar 23 and the bottom bell jar 24 form a closed space, and the wafer lifting device 21 is located in the closed space, so that the wafer 4 can grow an epitaxial layer in a clean and sealed environment. The displacement sensors 22 are disposed above the top bell jar 23, so that the wafer 4 carried on the wafer lifting device 21 can be monitored through the top bell jar 23 without introducing pollution to the growth environment of the wafer 4. The heating device 25 may be embodied as a lamp which emits heat. In fig. 1, the left arrow represents a position where the transfer blade 1 carries the wafer 4 into the reaction chamber 2, and the right arrow represents a position where the transfer blade 1 carries the wafer 4 out of the reaction chamber 2.
The displacement sensor 22 in the reaction chamber 2 may be a laser displacement sensor, but is not limited thereto. The laser displacement sensor can directly transmit the monitored position data to the controller 3, or the monitored data of the laser displacement sensor can be sent to the controller 3 as the position data after being preliminarily processed by additionally arranging a data processing unit outside the reaction chamber, and the specific implementation modes are various and are not limited to the mode shown here.
The controller 3 is configured to determine whether the wafer 4 generates lateral displacement at the second designated position according to the position data monitored by the displacement sensor 22; triggering an alarm when the judgment result is yes; the controller 3 is further configured to adjust the first designated position according to the position data when the alarm is triggered, so that the first designated position and the second designated position vertically correspond to each other.
It is understood that the first designated position is located above the wafer lift 21, and the second designated position is located below the first designated position and above the wafer lift 21.
In practical application, the controller 3 may automatically adjust the first designated position according to the position data when the alarm is triggered when it is determined that the wafer 4 generates the lateral displacement at the second designated position; or, when determining that the wafer 4 generates the lateral displacement at the second designated position, the controller 3 may trigger an alarm first; then, it is reasonable to adjust the first designated location according to the location data when the alarm is triggered, in response to the first designated location adjustment instruction or in response to the wafer epitaxy reaction apparatus entering the idle mode. The first designated position adjustment instruction may be issued to the controller 3 by a manager of the wafer epitaxy reaction apparatus.
In the wafer epitaxial reaction equipment provided by the embodiment of the application, the position data of the wafer in the epitaxial growth at the second appointed position is monitored by arranging the displacement sensor in the reaction chamber, and whether the wafer generates transverse displacement at the second appointed position is judged according to the position data; and triggering alarm data when the judgment result is yes, so as to avoid the wafer with poor epitaxial layer continuously growing in the wafer epitaxial reaction equipment. And the controller can also adjust the first designated position when the wafer is sent into the reaction chamber by the transmission blade according to the position data when the alarm is triggered so as to enable the first designated position and the second designated position to be vertically corresponding, thereby avoiding the transverse displacement when the wafer which is subsequently processed is placed at the second position and reducing the reject ratio when the wafer grows the epitaxial layer in the wafer epitaxial reaction equipment. Compared with the current situation that the wafer epitaxial reaction equipment needs to be shut down and the reaction chamber needs to be opened to correct the transverse displacement in the prior art, the wafer epitaxial reaction equipment does not need to be shut down, and the transverse displacement can be corrected without opening the reaction chamber.
In order to further reduce the reject ratio of the wafer when the epitaxial layer grows in the epitaxial reaction equipment, the wafer lifting device in the wafer epitaxial reaction equipment can be improved, so that each wafer cannot generate transverse displacement when being placed at the second appointed position.
Specifically, as shown in fig. 2, the wafer lifting device 21 used in the epitaxial reaction apparatus provided in the embodiment of the present application may include: a susceptor 211, a susceptor support shaft 212, susceptor support arms 213, a wafer support shaft 214, wafer support arms 215, and wafer lift pins 216; wherein,
the susceptor 211 is used for carrying the wafer 4; wafer 4 has an epitaxial layer grown on pedestal 211.
The base support shaft 212 is positioned below the base 211, and a plurality of base support arms 213 are uniformly arranged around the base support shaft 212, and the base support arms 213 are used for supporting the base 211; each base support arm 213 may be secured to the base 211 by a securing pin 217.
It is understood that the plurality of base support arms 213 are evenly disposed about the base support shaft 212, meaning that the angle at which each two adjacent base support arms 213 are spaced apart is equal.
The wafer supporting shaft 214 is located below the susceptor 211, and a plurality of wafer supporting arms 215 and a plurality of wafer lift pins 216 are uniformly arranged around the wafer supporting shaft 214, one ends of the wafer lift pins 216 penetrate through holes located in the susceptor 211, and the wafer lift pins 216 move in a vertical direction to cause the wafer 4 to be placed on the susceptor 211 or separated from the susceptor 211.
Similarly, the wafer support arms 215 are uniformly arranged around the wafer support shaft 214, which means that the angles between every two adjacent wafer support arms 215 are equal.
Wherein one end of the wafer supporting arm 215 is connected to the wafer supporting shaft 214, and the other end of the wafer supporting arm 215 is provided with a protrusion 218, and the protrusion 218 is provided with an opening for connecting with the wafer lifting pin 216.
In one embodiment, the wafer support shaft 214 drives the wafer support arm 215 to move in a vertical direction, and the wafer lift pins 216 move in a vertical direction with the wafer support arm 215, so that the wafer 4 is placed on the susceptor 211 or separated from the susceptor 211.
In the wafer lifting device 21, there are various specific structures of the protrusion structure 218. For example, the protrusion 218 may be a vertical column structure, a boss structure, or a spherical structure, which has a larger vertical dimension than the wafer support arm 215. Also, when the raised structure 218 is a post structure or a boss structure, the direction of the protrusion may be upward and/or downward. The shaded portion of fig. 2 illustratively shows a raised structure 218 in the form of an upwardly raised post structure.
The wafer lift pins 216 have one end supporting the wafer 4 and the other end inserted into the openings of the raised structures 218 to move with the raised structures 218. It is understood that, due to the long dimension of the protrusion 218 in the vertical direction, the depth of the opening can be deep, so that the wafer lift pin 216 is not tilted or shaken after being inserted. Therefore, the wafer lifting pin 216 can place the wafer 4 in the center of the susceptor 211, so as to ensure that the thickness of the epitaxial layer grown on the wafer 4 is uniform, and reduce the fraction defective of the wafer 4 when the epitaxial layer is grown in the reaction chamber 2.
The end of the wafer lift pin 216 that engages the raised structure 218 is sized and shaped to match the opening of the raised structure 218 to improve the stability of the engagement between the wafer lift pin 216 and the raised structure 218.
In addition, in order to further improve the connection stability between the wafer lift pin 216 and the protrusion 218, one end of the wafer lift pin 216 is used to support the wafer 4, and the other end of the wafer lift pin can be inserted into the opening of the protrusion 218 and threadedly connected with the protrusion 218, so that the wafer lift pin 216 moves along with the protrusion 218. At this time, the opening of the protruding structure 218 may be a threaded hole; accordingly, the end of the wafer lift pin 216 coupled to the raised structure 218 may be threaded to mate with the threaded hole.
It will be appreciated that when the wafer lift pins 216 are later repaired or replaced, the wafer lift pins 216 may be withdrawn from the openings of the raised structures 218. Therefore, the wafer lifting device 21 also has the advantage of simple maintenance. In addition, the wafer lifting device 21 shown in fig. 2 is adopted, and other metal guide devices are not required to be added in the reaction chamber 2, so that the pollution risk of the reaction chamber 2 is not increased.
Preferably, the wafer support arm 215 and the protrusion 218 are integrally formed of quartz to further improve the connection stability between the wafer lift pins 216 and the protrusion 218 and to avoid introducing additional accessories to the reaction chamber 2 to increase the risk of contamination.
It can be understood that, based on the cooperation of the displacement sensor 22 in the reaction chamber 2, the controller 3 and the wafer lifting device 21 shown in fig. 2, it is ensured that the wafer lifting device 21 places the wafer 4 at the second designated position without position deviation, thereby effectively reducing the defect rate of the wafer 4 during the epitaxial layer growth in the epitaxial reaction apparatus.
A plurality of displacement sensors 22 may be disposed in the reaction chamber 2, and the displacement sensors 22 are distributed above the top bell jar 23 in the reaction chamber 2, so that the wafer 4 carried on the pedestal 211 can be monitored through the top bell jar 23. The upper surface of the base 211 may be provided with a pocket in which the wafer 4 may be specifically carried.
Accordingly, the displacement sensor 22 can monitor the distance between the edge of the wafer 4 and the edge of the pit, and the distance can be used as the position data monitored by the displacement sensor 22.
In one embodiment, the displacement sensor 22 inside the reaction chamber 2 may include: a first displacement sensor, a second displacement sensor and a third displacement sensor; as shown in fig. 3, a first displacement sensor for monitoring the distance between the edge of the wafer 4 and the edge of the pit at the Gas injection port (Gas injection) of the reaction chamber 2; a second displacement sensor for monitoring the distance between the edge of the wafer 4 and the edge of the pit at the Exhaust port (Gas Exhaust) of the reaction chamber 2; and a third displacement sensor for monitoring the distance between the edge of the wafer 4 and the edge of the pit at a Slit valve (Slit valve) of the reaction chamber 2. The slit valve is an inlet and an outlet for the wafer 4 to enter and exit the reaction chamber 2.
In another embodiment, effective monitoring may be achieved using only two displacement sensors 22; preferably, assuming that the center of the wafer 4 is used as the origin and the plane of the wafer 4 is used as the plane of the rectangular coordinate system, the connection lines between the positions monitored by the two displacement sensors 22 and the origin may be perpendicular or approximately perpendicular to each other. For example, one displacement sensor 22 monitors the edge of the wafer 4 and the edge of the pocket at the slit valve, and the other monitors the edge of the wafer 4 and the edge of the pocket at the gas inlet or gas outlet of the reaction chamber 2.
In actual use, the position data monitored by the displacement sensor 22 corresponds to upper and lower limits; for example, in the embodiment in which 3 displacement sensors 22 are disposed in the reaction chamber 2, the distance between the edge of the wafer 4 and the edge of the pit monitored by each displacement sensor 22 may have respective upper and lower limits of the distance; when the distance monitored by any one of the displacement sensors 22 exceeds the corresponding upper and lower limits, the controller 3 triggers an alarm.
In addition, in an alternative implementation, the controller 3 may have a display panel associated therewith, or the controller 3 may communicate with a computer; in this way, the configuration data and its corresponding upper and lower limits, as well as the alarms triggered by the controller 3, may be visually displayed on a display panel associated with the controller 3 or on a display panel of a computer.
The controller 3 determines whether the wafer 4 generates lateral displacement at the second designated position according to the position data, and the specific implementation manner of adjusting the first designated position may include:
judging whether the wafer 4 generates transverse displacement at the second appointed position or not according to the position data monitored by the displacement sensor 22 and the corresponding upper and lower limits; triggering an alarm when the judgment result is yes;
adjusting the extension length and/or displacement parameters of the transmission blade 1 according to the position data when the alarm is triggered, so that the first designated position and the second designated position are vertically corresponding to each other through the transmission blade 1 adjusted by the extension length and/or the displacement parameters; wherein, the displacement parameter is used for representing the displacement of the conveying blade 1 in the preset direction; the predetermined direction is perpendicular to the direction in which the transfer blade 1 moves into and out of the reaction chamber 2. Thus, by adjusting the extension length and/or displacement parameters of the transfer blade 1, any lateral displacement of the wafer 4 on the susceptor 211 may be corrected.
It can be understood that, in practical applications, the functions implemented by the controller 3 are not limited to determining whether the wafer 4 generates lateral displacement and adjusting the extension length and displacement parameters of the transmitting blade 1, and may also control the temperature, the air intake amount, the air output amount, the epitaxial growth time, and the like of the reaction chamber 2, which are not the invention points of the embodiments of the present application, and therefore, the embodiments of the present application are not described in detail.
In order to more clearly illustrate the principle that the wafer lifting device of the embodiment of the present application ensures that the wafer lifting device places the wafer at the designated position without position deviation, the following provides a further detailed description of the wafer lifting device used in the wafer epitaxial reaction apparatus provided in the embodiment of the present application.
Alternatively, in the wafer lifting device 21, the susceptor supporting shaft 212 may drive the susceptor supporting arm 213 to move in the vertical direction, and the susceptor 211 may move in the vertical direction under the support of the susceptor supporting arm 213, so as to cooperate with the wafer supporting shaft 214, the wafer supporting arm 215 and the wafer lifting pin 216 to realize the loading of the wafer 4 on the susceptor 211 or the separation from the susceptor 211. Of course, the base support shaft 212 may also be stationary; that is, the position of the base 211 under support of the base support arm 213 may be fixed.
Wherein the pedestal support arm 213 may be positioned above the wafer support arm 215, and at least a portion of a vertical projection of the pedestal support arm 213 overlaps with a vertical projection of the wafer support arm 215;
accordingly, the susceptor support arm 213 is opened with a through hole on the moving path of the wafer lift pin 216, so that one end of the wafer lift pin 216 passes through the susceptor support arm 213 and contacts the wafer 4 through the through hole of the susceptor 211.
At this time, the height of the upwardly protruding portion of the protrusion 218 is less than the minimum relative distance between the susceptor support arm 213 and the wafer support arm 215. Thus, when the wafer lift pins 216 move in the vertical direction, the raised structures 218 connected to the wafer lift pins 216 do not contact the upper susceptor support arm 213.
For example, assuming the protrusion 218 is a post structure and the minimum relative distance between the base support arm 213 and the wafer support arm 215 is 5 cm, the height of the post structure can be set between 1 cm and 5 cm. Accordingly, the depth of the opening in the pillar structure may be less than or equal to the height of the pillar structure.
Fig. 4 schematically shows the distribution of the susceptor support arm 213, the wafer lift pins 216, and the wafer support arm 215 when the wafer lift apparatus 21 is viewed from above. In fig. 4, the rectangle represents the pedestal support arm 213, the black dots represent the wafer lift pins 216 passing through the pedestal support arm 213, and the circle hidden below the rectangle represents the raised structures 218 to which the wafer lift pins 216 are connected. In figure 4, the wafer support arm 215 is shielded from the upper susceptor support arm 213 and is not shown in figure 4.
It will be appreciated that the susceptor support arm 213 is positioned above the wafer support arm 215, and that the susceptor support shaft 212 is also positioned above the wafer support shaft 214.
In another implementation, the vertical projection of the susceptor support arm 213 and the vertical projection of the wafer support arm 215 do not overlap in the moving path of the wafer lift pins 216, so that the wafer lift pins 216 hold the end of the wafer 4 through the through holes of the susceptor 211 to contact the wafer 4.
In this implementation, the susceptor support arm 213 may be positioned above the wafer support arm 215 or below the wafer support arm 215. The vertical positional relationship between the susceptor support shaft 212 and the wafer support shaft 214 is matched with the vertical positional relationship between the susceptor support arm 213 and the wafer support arm 215.
Wherein when the susceptor support arms 213 are above the wafer support arms 215, the wafer lift pins 216 supported by the underlying wafer support arms 215 may pass through the gaps between the susceptor support arms 213 and then through the through holes of the susceptor 211 to contact the wafer 4. Figure 5 schematically illustrates the distribution of the susceptor support arm 213, the wafer lift pins 216, and the wafer support arm 215 when the susceptor support arm 213 is above the wafer support arm 215. In fig. 5, the longer rectangle represents the susceptor support arm 213, the black dots represent the wafer lift pins 216, the circles represent the raised structures 218 to which the wafer lift pins 216 are attached, and the shorter rectangle, which is obscured by the circles, represents the wafer support arm 215.
It will be appreciated that in this implementation, the wafer lift pins 216 only need to avoid the susceptor support arm 213 to contact the wafer 4 through the through holes of the susceptor 211, and thus the implementation requires less precision in the relative positions of the susceptor support arm 213 and the wafer support arm 215; moreover, the susceptor support arm 213 need not have through holes for the wafer lift pins 216 to pass through; furthermore, the height of the raised structures 218 is also not limited; this reduces the complexity of the structure of the wafer lifting device 21.
When the susceptor support arm 213 is under the wafer support arm 215, the susceptor support arm 213 does not cause any obstruction to the wafer support arm 215 and the wafer lift pins 216; the wafer support arm 215 is movable in the vertical direction between the upper susceptor 211 and the lower susceptor support arm 213. Figure 6 schematically illustrates the wafer lift apparatus 21 when the susceptor support arm 213 is below the wafer support arm 215.
As can be seen from the wafer lift apparatus 21 shown in fig. 6, the relative distribution positions of the susceptor support arm 213 and the wafer support arm 215 may be arbitrary; the relationship between the number of susceptor support arms 213 and the number of wafer support arms 215 may be arbitrary. This further reduces the structural complexity of the wafer lifting device 21.
Fig. 7, 8 and 9 respectively show schematically the distribution of the susceptor support arm 213, the wafer lift pins 216 and the wafer support arm 215 when the wafer lift device 21 is viewed from above. Wherein the longer rectangle represents the susceptor support arm 213, the black dots represent the wafer lift pins 216, the circles represent the raised structures 218 to which the wafer lift pins 216 are attached, and the shorter rectangle, which is obscured by the circles, represents the wafer support arm 215. As can be seen from fig. 7 and 8, the vertical projection of the wafer support arm 215 and the vertical projection of the susceptor support arm 213 may be uniformly distributed and not overlapped with each other, or may be non-uniformly distributed and partially overlapped with each other. In addition, as shown in fig. 9, the number of wafer support arms 215 may also be different from the number of susceptor support arms 213.
It should be noted that fig. 4, 5, 7, 8, and 9 are only intended to illustrate the distribution of the wafer support arm 215, the wafer lift pins 216, and the susceptor support arm 213, and are not intended to illustrate the connection relationship between the wafer support arm 215, the wafer lift pins 216, and the susceptor support arm 213, nor the specific structure of the wafer support arm 215, the wafer lift pins 216, and the susceptor support arm 213.
Alternatively, each of the susceptor support arms 213 and each of the wafer support arms 215 may be tilted at a predetermined angle toward the wafer 4 in order to improve the stability of the susceptor support arms 213 when supporting the susceptor 211 and the stability of the wafer support arms 215 when supporting the wafer 4 by the wafer lift pins 216. It will be appreciated that the wafer 4 is oriented in an upward direction.
In the various wafer lifting/lowering devices 21 described above, the wafer lifting/lowering pins 216 may be made of silicon carbide, or the outer surfaces of the wafer lifting/lowering pins 216 made of other materials may be made of silicon carbide.
In addition, in the embodiment where the base support shaft 212 drives the base support arms 213 to move in the vertical direction, as shown in fig. 2, the base support shaft 212 may include a first support shaft 2121 and a first lift cylinder 2122 sleeved on the first support shaft 2121, and each base support arm 213 is connected to the first lift cylinder 2122; the first elevating barrel 2122 is movable up and down along the first support shaft 2121 to move the respective base support arms 213 up and down.
Similarly, the wafer supporting shaft 214 may include a second supporting shaft 2141 and a second lifting cylinder 2142 sleeved on the second supporting shaft 2141, and each wafer supporting arm 215 is connected to the second lifting cylinder 2142; the second lift cylinder 2142 is movable up and down along the second support shaft 2141 to thereby move the respective wafer support arms 215 up and down. Of course, in embodiments where the susceptor support shaft 212 is stationary, the specific structure of the wafer support shaft 214 can also be referred to.
Preferably, in order to place the wafer 4 at the center of the susceptor 211 when the wafer supporting arm 215 supports the wafer 4 by the wafer lift pins 216, the axial line of the first supporting shaft 2121 may coincide with the axial line of the second supporting shaft 2141.
In particular applications, the first support shaft 2121 and the second support shaft 2141 may be two portions of the same support shaft. Alternatively, the first support shaft 2121 and the second support shaft 2141 may be two different support shafts whose axes are overlapped with each other, which is not limited in the embodiment of the present application.
It should be noted that the specific structure of the susceptor support shaft 212 and the specific structure of the wafer support shaft 214 are shown only as examples and should not be construed as limiting the present application, and any susceptor support shaft 212 capable of supporting the susceptor 211 by the susceptor support arm 213 and any wafer support shaft 214 capable of moving the wafer support arm 215 in the vertical direction are applicable to the present application.
In a preferred embodiment, the number of the susceptor support arms 213 in any of the wafer lift devices 21 described above may be three, the number of the wafer support arms 215 may be three, and the number and positions of the wafer lift pins 216 may correspond to the wafer support arms 215 as shown in fig. 4.
Fig. 10 schematically shows a detailed structure of the interior of the reaction chamber 2, based on the wafer lifting device 21 shown in fig. 2; as shown in fig. 10, the reaction chamber 2 includes: a displacement sensor 22, a pyrometer 26, a base 211, a base support shaft 212, a plurality of base support arms 213, a wafer support shaft 214, a plurality of wafer support arms 215, a plurality of wafer lift pins 216, a top bell jar 23, a bottom bell jar 24, and a heating device 25. Wherein, one end of each wafer support arm 215 is provided with a protrusion 218; a susceptor 211, a susceptor support shaft 212, a susceptor support arm 213, a wafer support shaft 214, a wafer support arm 215, a wafer lift pin 216, and a protrusion structure 218, constituting a wafer lift device 21; the structure labeled 4 represents a wafer and the structure labeled 217 is a retaining pin that connects the pedestal support arm 213 to the pedestal. The left arrow represents the position where the wafer 4 enters the reaction chamber 2, and the right arrow represents the position where the wafer 4 is withdrawn from the reaction chamber 2.
When the wafer 4 grows an epitaxial layer in the reaction chamber 2, the ambient temperature in the reaction chamber 2 can be 1100-1200 ℃; after the epitaxial layer growth is completed, the reaction chamber 2 may be cooled to about 800 ℃ to take out the wafer 4.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims.
The foregoing is a more detailed description of the present application in connection with specific preferred embodiments and it is not intended that the present application be limited to these specific details. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.
Claims (10)
1. A wafer epitaxial reaction apparatus, comprising: a transfer blade, a reaction chamber and a controller; wherein,
the conveying blade is used for conveying a wafer to a first designated position in the reaction chamber and carrying the wafer away from the reaction chamber from the first designated position after the epitaxial growth of the wafer is completed;
the reaction chamber is used for providing an epitaxial growth environment for the wafer; wherein, a wafer lifting device and a displacement sensor are arranged in the reaction chamber; the wafer lifting device is used for driving the wafer to move between the first designated position and the second designated position so as to load the wafer at the second designated position for epitaxial growth; the displacement sensor is used for monitoring position data of the wafer at the second appointed position;
the controller is used for judging whether the wafer generates transverse displacement at the second appointed position according to the position data; triggering an alarm when the judgment result is yes; the controller is further configured to adjust the first designated position according to the position data when the alarm is triggered, so that the first designated position and the second designated position correspond up and down.
2. The wafer epitaxy reaction apparatus of claim 1, wherein the wafer lifting device comprises:
the base is used for bearing the wafer;
a base support shaft located below the base, around which a plurality of base support arms are evenly arranged for supporting the base;
the wafer supporting shaft is positioned below the base, a plurality of wafer supporting arms and a plurality of wafer lifting pins are uniformly arranged around the wafer supporting shaft, one ends of the wafer lifting pins penetrate through holes in the base, and the wafer lifting pins move along the vertical direction to enable the wafer to be loaded on the base or separated from the base;
one end of the wafer supporting arm is connected with the wafer supporting shaft, the other end of the wafer supporting arm is provided with a protruding structure, and the protruding structure is provided with an opening for being connected with the wafer lifting pin; the wafer supporting arm and the protruding structure are integrally formed quartz structures.
3. Wafer epitaxy reaction apparatus according to claim 2,
one end of the wafer lifting pin is used for supporting the wafer, and the other end of the wafer lifting pin is inserted into the opening of the protruding structure and is in threaded connection with the protruding structure, so that the wafer lifting pin moves along with the protruding structure.
4. Wafer epitaxy reaction apparatus according to claim 2 or 3, characterised in that the reaction chamber further comprises: a top bell jar and a bottom bell jar; the wafer lifting device is positioned between the top bell jar and the bottom bell jar;
the displacement sensors are distributed above the top bell jar in the reaction chamber so as to monitor the wafer loaded on the base through the top bell jar.
5. Wafer epitaxy reaction apparatus according to claim 4,
the upper surface of the base is provided with a pit, and the pit is used for bearing the wafer;
the location data includes: a distance between an edge of the wafer and an edge of the pocket.
6. Wafer epitaxy reaction apparatus according to claim 5, characterised in that the displacement sensor comprises: a first displacement sensor, a second displacement sensor and a third displacement sensor; wherein,
the first displacement sensor is used for monitoring the distance at a gas injection port of the reaction chamber;
the second displacement sensor is used for monitoring the distance at the exhaust port of the reaction chamber;
the third displacement sensor is used for monitoring the distance of the slit valve of the reaction chamber.
7. Wafer epitaxy reaction apparatus according to claim 4, wherein the controller is specifically configured to:
judging whether the wafer generates transverse displacement at the second appointed position or not according to the position data and the corresponding upper and lower limits; triggering an alarm when the judgment result is yes; adjusting the extension length and/or displacement parameters of the conveying blade according to the position data when the alarm is triggered, so that the first designated position and the second designated position are vertically corresponding to each other through the conveying blade adjusted by the extension length and/or the displacement parameters;
the displacement parameter is used for representing the displacement of the conveying blade in a preset direction; the preset direction is perpendicular to the direction of the conveying blade entering and exiting the reaction chamber.
8. Wafer epitaxy reaction apparatus according to claim 2,
the vertical projection of the base supporting arm and the vertical projection of the wafer supporting arm are not overlapped on the moving path of the wafer lifting pin, so that one end of the wafer lifting pin penetrates through the through hole in the base to be in contact with the wafer.
9. Wafer epitaxy reaction apparatus according to claim 8,
the susceptor support arm is located above the wafer support arm or the susceptor support arm is located below the wafer support arm.
10. Wafer epitaxy reaction apparatus according to claim 9,
the susceptor supporting arm and the wafer supporting arm are respectively inclined towards the direction of the wafer by a preset angle.
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| CN202010881036.0A CN112216636A (en) | 2020-08-27 | 2020-08-27 | Wafer epitaxial reaction equipment |
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| CN202010881036.0A CN112216636A (en) | 2020-08-27 | 2020-08-27 | Wafer epitaxial reaction equipment |
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Cited By (1)
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| CN114293250A (en) * | 2021-12-29 | 2022-04-08 | 西安奕斯伟材料科技有限公司 | System and method for adjusting silicon wafer position and epitaxial equipment |
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Effective date of registration: 20210926 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710000 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |