CN108336000A - epitaxial device - Google Patents
epitaxial device Download PDFInfo
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- CN108336000A CN108336000A CN201810058600.1A CN201810058600A CN108336000A CN 108336000 A CN108336000 A CN 108336000A CN 201810058600 A CN201810058600 A CN 201810058600A CN 108336000 A CN108336000 A CN 108336000A
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- base station
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Abstract
A kind of epitaxial device, including：Processing chamber；Base station in processing chamber, the base station is for fixing wafer and the wafer being driven to rotate；Position detection unit, whether the wafer that the position detection unit is used to detect the placement on base station shifts, and obtains deviation post of the wafer on base station；Gas supply unit positioned at base station side, the gas supply unit is for supplying process gas into processing chamber, to form film layer on the surface of wafer, detect that the wafer on base station has offset in position detection unit, when forming film layer, when the deviation post of wafer rotates to the side towards gas supply unit, gas supply unit increases the amount that process gas is supplied into processing chamber.The epitaxial device of the present invention can form film layer in homogeneous thickness on the surface of offset wafer.
Description
Technical field
The present invention relates to field of semiconductor fabrication, and a kind of epitaxial device is especially arranged.
Background technology
Extension (Epitaxy, abbreviation Epi) technique refers to growing one layer in single crystalline substrate to arrange with identical lattice with substrate
The monocrystal material of row, epitaxial layer can be homogeneity epitaxial layer (Si Grown Si epitaxial layers), can also be epitaxially deposited layer
(SiC epitaxial layer on Si Grown SiGe epitaxial layers or Si Growns)；It is same to realize that epitaxial growth also has many sides
Method, including molecular beam epitaxy, ultra-high vacuum CVD, normal pressure and reduced pressure epitaxy etc..
Epitaxy technique is carried out in epitaxial device, referring to FIG. 1, existing epitaxial device generally comprises processing chamber
(not shown), the base station 101 being located in processing chamber, the base station 101 are located at base station 101 1 for loading wafer 102
The gas supply unit 103 of side, the gas supply unit 103 are used to supply process gas 104 into processing chamber, and wafer passes
Unit (not shown), the wafer transmission unit is sent to be used to that the wafer 102 for carrying out process will to be needed to be sent to technique
On the base station 101 of chamber.
Using epitaxial device carry out epitaxy technique main process include：Wafer is sent to work by wafer transmission unit
On the base station of skill chamber；Gas supply unit supplies process gas into processing chamber, and the crystal column surface on base station forms outer
Prolong layer, during forming epitaxial layer, base station drives the wafer rotation.Existing epitaxial device forms the scheme of epitaxial layer
There are the non-uniform problems of the epitaxy layer thickness of formation.
Invention content
Problems solved by the invention be how offset wafer surface form epitaxial film in homogeneous thickness.
To solve the above problems, the present invention provides a kind of epitaxial devices, including：
Processing chamber；
Base station in processing chamber, the base station is for fixing wafer and the wafer being driven to rotate；
Whether position detection unit, the wafer that the position detection unit is used to detect the placement on base station shift,
And obtain deviation post of the wafer on base station；
Gas supply unit positioned at base station side, the gas supply unit is for supplying process gas into processing chamber
Body detects that the wafer on base station has offset in position detection unit, is forming film layer to form film layer on the surface of wafer
When, when the deviation post of wafer rotates to the side towards gas supply unit, gas supply unit increases to processing chamber
The amount of middle supply process gas.
Optionally, wafer deviation post on base station is that offset of the wafer on base station is ascending and then by big
To small distributing position, the offset is the air line distance at the edge and base station edge of wafer.
Optionally, the base station includes the driving unit being connect with base station, for driving the base station to rotate.
Optionally, the position detection unit includes laser sensing unit, and the laser sensing unit includes Laser emission
Unit and light receiving unit, the laser emission element is for emitting laser, and the light receiving unit is for receiving reflected light production
Raw electric signal, the laser sensor is located at the surface of base station, and when base station rotates, the laser of laser emission element transmitting exists
The center of the projection on base station surface is overlapped with the center of base station, and the laser is equal to wafer in the size of the projection on base station surface
Size or laser are less than 0.5 centimetre in the absolute value of the difference of the size of the projection on base station surface and the size of wafer.
Optionally, the laser is different from laser in the reflectance factor on base station surface, light in the reflectance factor of crystal column surface
Receiving unit receive crystal column surface reflected light and base station surface reflected light when generate varying level electric signal.
Optionally, the position detection unit further includes base station initial position detection unit, the base station initial position inspection
Survey unit be used for detect base station rotation when initial position, the base station initial position detection unit relative to laser sensing
Distance is fixed between device, base station and gas supply unit, and the position detection unit further includes control unit, and the control is single
Base station is at the uniform velocity rotated a circle from initial position and base station is carried out 0 degree to 360 degree of position mark when returning to initial position by member, and
Obtain laser sensing unit and the corresponding position mark of gas supply unit.
Optionally, when carrying out the detection of deviation post, the laser sensing cell position is kept fixed, and the base station exists
At least one week is at the uniform velocity rotated under the driving of driving unit, the electricity for the electric signal that described control unit is detected according to laser sensing unit
The signal of flat mutation and the detection of base station initial position detection unit obtains the position mark of two different angles, two different angles
The region spent between position mark is deviation post.
Optionally, control unit is supplied single when deviation post rotates to the corresponding position of gas supply unit to gas
Member sends the instruction for adjusting gas supply, and the gas supply unit increases when receiving the instruction for adjusting gas supply
The amount of process gas is supplied greatly into processing chamber.
Optionally, the amount process for increasing the supply process gas into processing chamber includes：Gradually increase gas technology
Amount, be then gradually reduced gas supply amount.
Optionally, gas supply unit is passed through mouth including master and auxiliary is passed through mouth, and described increase is supplied into processing chamber
The amount process of process gas includes：When forming film layer, master is passed through mouth and is passed through process gas to processing chamber always, when wafer
When deviation post rotates to the side towards gas supply unit, auxiliary is passed through mouth and starts to be passed through process gas to processing chamber.
Compared with prior art, technical scheme of the present invention has the following advantages：
Whether the wafer that the epitaxial device of the present invention is used to detect the placement on base station by the position detection unit is sent out
Raw offset, and obtain deviation post of the wafer on base station；Gas supply unit is used to supply process gas into processing chamber,
To form film layer on the surface of wafer, detect that the wafer on base station has offset in position detection unit, when forming film layer,
When the deviation post of wafer rotates to the side towards gas supply unit, gas supply unit increases to be supplied into processing chamber
Answer the amount of process gas.Thus when offset has occurred on base station in wafer, due to obtaining the deviation post of wafer, bits of offset
It sets when rotating to the side towards gas supply unit, gas supply unit, which increases, supplies process gas into processing chamber
Amount so that the thickness of the film layer on the surface of the corresponding wafer of deviation post is relative to the relatively film layer on existing offset wafer
Thickness can increased (i.e. so that relatively thin thickness is compensated) so that deviating the thickness of the film layer of all directions of wafer can protect
It holds consistent or thickness and differs smaller, to improve the uniformity that offset crystal column surface forms thicknesses of layers.
Description of the drawings
Fig. 1~Fig. 2 is the structural schematic diagram of the epitaxial device of the prior art；
Fig. 3~Fig. 4 is the structural schematic diagram of epitaxial device in the embodiment of the present invention；
Fig. 5 is the signal graph of each unit of the epitaxial device of the embodiment of the present invention.
Specific implementation mode
As described in the background art, there is the epitaxy layer thickness unevenness formed in the scheme that existing epitaxial device forms epitaxial layer
Even problem, the uneven of epitaxy layer thickness are easy so that making scrapping for wafer.
The study found that existing epitaxy layer thickness it is uneven be presented as on one side thickness it is thin while thickness thickness, further
The study found that existing before forming epitaxial layer, when wafer is transferred into base station surface, due to transmission arm offset or
Be used to support on base station the thimble of wafer height is inconsistent etc. that reasons, position of the wafer when being adsorbed on base station surface will produce
Offset (i.e. the edge of a direction of wafer at a distance from base edge of table farther out, and the edge and base of opposite other direction
The distance of edge of table is closer), it is specific referring to FIG. 2, the edge of the side of close the gas supply unit 103 of wafer 102 and
Farther out, and the edge of the side far from gas supply unit 103 and base station 101 is remoter than that for the distance at the edge of base station 101
Distance is closer.Since process gas 104 is to be passed through processing chamber from 101 side of base station and wafer 102 is in base when forming epitaxial layer
It is rotation, offset of the wafer 102 on base station 101 so that one side of the epitaxial layer formed on wafer under the drive of platform 101
The thinner thickness on (one side of the edge of wafer and the Edge Distance of base station farther out), and opposite another side (edge of wafer with
The closer one side of the Edge Distance of base station) thickness it is thicker.
Thus, the present invention provides a kind of epitaxial device, the epitaxial device can form thickness on the surface of offset wafer
Uniform epitaxial layer.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.When describing the embodiments of the present invention, for purposes of illustration only, schematic diagram can disobey general proportion
Make partial enlargement, and the schematic diagram is example, should not limit the scope of the invention herein.In addition, in reality
In making should include length, width and depth three-dimensional space.
Fig. 3~Fig. 4 is the structural schematic diagram of epitaxial device in the embodiment of the present invention；Fig. 5 is the extension of the embodiment of the present invention
The signal graph of each unit of equipment
With reference to figure 3, an embodiment of the present invention provides a kind of epitaxial devices, including：
Processing chamber (not shown)；
Base station 201 in processing chamber, the base station 201 is for fixing wafer 202 and the wafer 202 being driven to revolve
Turn；
Position detection unit 220, the wafer 202 that the position detection unit 220 is used to detect the placement on base station 201 are
It is no to shift, and obtain deviation post of the wafer 202 on base station 201；
Gas supply unit 203 positioned at 201 side of base station, the gas supply unit 203 are used for into processing chamber
Process gas is supplied, to form film layer on the surface of wafer 202, the wafer on base station 201 is detected in position detection unit 220
202 have offset, when forming film layer, when the deviation post of wafer 202 rotates to the side towards gas supply unit 203
When, gas supply unit 203 increases the amount that process gas is supplied into processing chamber.
The processing chamber is chamber when carrying out epitaxy technique.The processing chamber is closed chamber, as needed may be used
To adjust the parameters such as the pressure in processing chamber, temperature.
There are several through-holes in the base station 201, be provided with thimble 205 in the through-hole, the thimble 205 can on move down
It is dynamic, so that the surface of base station 201 can be placed and be detached to the wafer 202 being placed on thimble 205, when wafer 202 is being placed on base
When the surface of platform, the base station 202 generates suction and wafer 202 is made to be absorbed and fixed at the surface of base station 201.
The epitaxial device further includes transmission unit (not shown), and the transmission unit is used for wafer from outer extended
It is standby to be sent to outside on the base station 201 in epitaxial device processing chamber.In one embodiment, wafer is transferred into 201 surface of base station
Process include：Transmission unit receives the wafer 202 outside epitaxial device；Thimble 205 rises；Transmission unit is by wafer 202
It is positioned on the thimble 205 of rise；Then, thimble 205 declines so that wafer 202 is placed on the surface of base station 201, base station 201
Generate suction so that wafer 202 is absorbed and fixed at the surface of base station 201.
Transmission unit generally includes transmission arm, and in actual technique, due to transmitting the offset of arm, wafer 202 exists
When being sent on the thimble 205 of rise, wafer 202 has offset by scheduled position, after the decline of thimble 205,202 quilt of wafer
It is absorbed and fixed at the position offset generated when the surface of base station 201.Alternatively, since 205 height of thimble is inconsistent so that thimble
The center of gravity of wafer 202 on 205 can change, and during thimble 205 declines and wafer 202 with base station 201 when contacting, brilliant
The offset of position can also occur for circle 202.
The epitaxial device further includes：The driving unit 209 being connect with base station 201, for driving the base station 201 to revolve
Turn.In one embodiment, the driving unit 209 includes stepper motor.
Whether the wafer 202 that the position detection unit 220 is used to detect the placement on base station 201 shifts, and obtains
Deviation post of the wafer 202 on base station 201 is obtained, the deviation post on base station 201 of the wafer 202 is wafer in base station 201
On the ascending and then descending distributing position of offset, the offset is the straight of edge and the base station edge of wafer
Linear distance.The beginning and end for determining deviation post is detected by position detection unit 220.
In the present embodiment, the position detection unit 220 includes laser sensing unit 206, the laser sensing unit 206
Including laser emission element and light receiving unit, for emitting laser, the light receiving unit is used for the laser emission element
It receives reflected light and generates electric signal, the laser sensor 260 is located at the surface of base station 201, when base station 201 rotates, swashs
Formation of the laser that light emitting unit 260 emits on base station surface projects 210, projects center and the base station of 210 (with reference to figures 4)
201 center 20 overlaps, the laser the size of the projection on 201 surface of base station be equal to wafer size or laser in base
The absolute value of the difference of the size of the projection on platform surface and the size of wafer is less than 0.5 centimetre, and the laser is on 202 surface of wafer
Reflectance factor is different from laser in the reflectance factor on base station surface, the reflected light and base on 202 surface of light receiving unit reception wafer
The electric signal of varying level, thus the level of the electric signal generated by light receiving unit are generated when the reflected light on 201 surface of platform
Variation can be obtained the beginning and end position of deviation post so that position detection unit 220 accurate and easy can obtain
Obtain deviation post of the wafer on base station 201.
In the present embodiment, the reflectance factor on the base station surface is more than the reflectance factor of crystal column surface.In other embodiment
In, the reflectance factor on the base station surface is less than the reflectance factor of crystal column surface.
Specifically, referring to FIG. 4, wafer on base station 201 when shifting, the edge of wafer 201 is also offset laser
Projection 210 of the laser that sensing unit 206 emits on base station 201 so that there are two intersection points with projection 210 at the edge of wafer
(intersection point 21 and intersection point 22 shown in Fig. 4), when measuring, the position of laser sensing unit 206 is fixed, base station
201 drive wafer rotation, when base station rotates a circle, the telecommunications that light receiving unit receives when measuring of laser sensing unit 206
The mutation of level twice number is will produce, intersection point 21 and intersection point 22 are the beginning and end position as deviation post.The present embodiment
In, the signal that when surface for the laser irradiation base station 201 that the laser sensing unit 206 emits senses is high level signal, is swashed
The signal sensed when the surface for the laser irradiation wafer 202 that light sensing unit 206 emits is low level signal (with specific reference to Fig. 5
In laser sensing unit detection signal)
In conjunction with reference to figure 3, Fig. 4 and Fig. 5, the position detection unit 220 further includes base station initial position detection unit
208, the base station initial position detection unit 208 is used to detect initial position when base station 201 rotates, the base station initial bit
It sets the distance between laser sensor 206, base station 201 and gas supply unit 203 of detection unit 208 to fix, institute
It further includes control unit 207 to state position detection unit 220, and base station is at the uniform velocity rotated one by described control unit 207 from initial position
Base station is carried out to 0 degree to 360 degree of position mark when returning to initial position week, and obtains laser sensing unit 206 and gas confession
Answer unit 203 relative to the location information of 0 degree of position mark.
The base station initial position detection unit 208 includes photoelectric sensor, magnetic induction sensor or image sensing sense of touch
Device, in one embodiment, when the base station initial position detection unit 208 is photoelectric sensor, the photoelectric sensor packet
Catch and photographic department are included, the catch is set on base station 201 and (is such as set in the shaft of the motor of driving unit 209), sense
Light portion is set on the fixed component outside shaft, and the photographic department will produce the mutation of level when being blocked by catch
(being put down by high level to low spot or by low level to high level), when into the measurement of line home position, catch is with base station one
Rotation is played, when catch rotates to photographic department position, the transmission of light in photographic department is blocked, the prominent of level is generated in photographic department
Become, specifically please refer to the signal that base station initial position detection unit detects in Fig. 5, base station 202 rotates a circle (to be revolved from initial position
Turn 360 ° and return to initial position) it will produce the mutation of level twice.
In the present embodiment, the driving unit 209, base station initial position detection unit 208,220 and of position detection unit
Gas supply unit 203 is using identical clock signal (with reference to figure 5).
Described control unit 207 base station 202 is at the uniform velocity rotated a circle from initial position when returning to initial position by base station into
The position mark that 0 degree to 360 degree of row is rotated clockwise with base station as an example, referring to FIG. 5, base station in one embodiment
202 positions for rotating to base station initial position detection unit 208 are initial position, which is that 0 ° of (zero degree) position is marked
Note, in the present embodiment due to the rate that base station rotates a circle be at the uniform velocity, i.e., the angle of the rotation in the unit interval be it is certain,
The time that control unit 207 rotates a circle according to base station can proceed by from initial position base station 0 degree to 360 degree of position
Label (position mark has the correspondence with clock signal intensity with the signal that base station initial position detection unit 208 detects,
The signal of base station initial position detection unit detection in Fig. 5 is corresponding with 0 degree to 360 degree of angle mark), for example pressed in Fig. 4
Anticlockwise 0 °, 90 °, 180 °, 280 °, 360 ° of 5 position marks, the quantity of position mark can be according to actual need
It is set, and since base station initial position detection unit 208 is relative to laser sensing unit 206 and gas supply unit
203 position is fixed, and control unit 207 can easily obtain laser sensing unit 206 and gas supply unit 203
(straight line 30 is along clockwise to straight line 33 for A ° of corresponding position mark (straight line 30 is along clockwise to the angle between straight line 31) and B °
Between angle).
When carrying out the detection of deviation post, 208 position of laser sensing unit is kept fixed, and the base station 201 exists
At least one week is at the uniform velocity rotated under the driving of driving unit, the electricity for the electric signal that described control unit is detected according to laser sensing unit
The signal of flat mutation and the detection of base station initial position detection unit obtains the position mark of two different angles, two different angles
The region spent between position mark is deviation post, to realize the precise marking to deviation post.
In one embodiment, the process of control unit acquisition deviation post is：Incorporated by reference to reference to figure 4 and Fig. 5, base station is initial
Position detection unit (208) and laser sensing unit (206) carry out the detection of signal (at the t1 moment) simultaneously, and acquisition is believed with clock
Number variation base station initial position detection unit detection signal and laser sensing unit detection signal, laser sensing unit inspection
At t2 time points and t3 time points level mutation, t2 time points (intersection point 21) corresponding relative angular position mark occur for the signal of survey
It is denoted as d °, t3 time points (intersection point 22) corresponding relative angular position is labeled as e °, laser sensing unit 206 and base station initial bit
The angle for setting detection unit difference is A °, then 21 actual angle position of intersection point marks D ° to be equal to d ° and adds A °, and intersection point 22 is real
The angle position on border marks E ° to add A ° for e °, and the time that control unit 207 rotates a circle according to base station can carry out 0 to base station
The position mark to 360 degree is spent, the region (angular regions between 34 arrow of straight line 32 and straight line) between D ° and E ° is offset
Position.
In another embodiment, when described laser sensing unit (206) lag base station initial position detection unit (208) T3
Between carry out the detection of signal, T3 is equal to the at the uniform velocity angular velocity of rotation of A ° divided by base station, and the signal of laser sensing unit detection is in t4
Level mutation occurs for time point and t5 time points, and t4 time points and t5 time corresponding angles are that intersection point 21 and intersection point 22 are corresponding
Actual angle position label.
Control unit 207 is sent out when deviation post rotates to the corresponding position of gas supply unit to gas supply unit
Send the instruction for adjusting gas supply 203, the gas supply unit 203 when receiving the instruction for adjusting gas supply,
Increase the amount that process gas is supplied into processing chamber.
Control unit 207 judges that the mode that the corresponding position of gas supply unit is rotated in deviation post is：Due to inclined
The actual angle position label of two intersection points (21,22) of pan position, which has detected, to be known, and at the beginning of gas supply unit and base station
The position of beginning position detection unit (208) is fixed thus as a reference point with base station initial position detection unit (208)
When, deviation post (two intersection points 21 and 22) and the angle of gas supply unit 203 are also fixed, when forming film layer,
After obtaining deviation post, when base station rotates to initial position again, base station initial position detection unit 208 is detected into an electricity
Flat jump signal, which is used as, refers to time point, and base station 202 continues rotation T1 chronomeres, and (T1 is equal to intersection point 21 and gas supply unit
The rotary speed of angle divided by base station between 203) when control unit 207 to gas supply unit 203 send adjust gas supply
203 instruction should be measured, the gas supply unit 203 increases when receiving the instruction for adjusting gas supply to process cavity
The amount of process gas is supplied in room.
Described increase supplies the amount foregoing description gas supply unit 203 of process gas into processing chamber to processing chamber
The amount of middle supply process gas is the first value.
In one embodiment, the amount process for increasing the supply process gas into processing chamber is：From deviation post
One intersection point (21) rotates to towards gas supply unit 203, will directly supply the amount of process gas to a certain setting value (from
One value directly increases to second value).
In another embodiment, the amount process for increasing the supply process gas into processing chamber includes：When from offset
When one intersection point (21) of position rotates to another intersection point (22) towards gas supply unit 203, first gradually increase gas
Then the amount (being gradually increased to another value (third value) from some value (the first value)) of technique is gradually reduced gas supply
It measures (gradually decreasing to the first value from third value) so that can be more accurate to the compensation of deviation post film thickness, further increase film layer
The uniformity of thickness.
In one embodiment, when the deviation post of wafer 203 rotates to the side towards gas supply unit 203, gas
Body supply unit increase into processing chamber supply process gas amount (from the first value to second value), deviation post (such as
Intersection point 22) far from gas supply unit 203 when, gas supply unit 203 reduce into processing chamber supply process gas amount
(from second value to the first value) so that the position except deviation post is correspondingly formed the thickness of the thickness and deviation post film layer of film layer
Degree can be consistent or differ smaller, further increase the uniformity of thicknesses of layers.Described control unit 207 is supplied single to gas
First 203 send the instruction for stopping adjusting gas supply 203, and the gas supply unit 203 is receiving stopping adjusting gas
When the instruction of supply, reduce the amount that process gas is supplied into processing chamber.Described control unit 207 is to gas supply unit
When 203 opportunitys for sending the instruction for stopping adjusting gas supply 203 were the T2 after sending the instruction for adjusting gas supply 203
Between the unit angular range divided by rotary speed of deviation post (T2 be equal to).
In one embodiment, if there is the gas supply unit 203 dry gas to be passed through mouth, mouth is passed through by adjusting gas
The flow velocity of middle gas adjusts the amount that process gas is supplied into processing chamber, specifically, increasing the stream that gas is passed through gas in mouth
Speed, increases the amount that process gas is supplied into processing chamber, and the corresponding flow velocity for reducing gas and being passed through gas in mouth reduces to work
The amount of process gas is supplied in skill chamber.
In another embodiment, the gas supply unit include it is main be passed through mouth and auxiliary is passed through mouth, the main mouth and auxiliary of being passed through
It helps and is passed through mouth and can supply process gas into processing chamber, it is described to increase the amount mistake that process gas is supplied into processing chamber
Journey includes：When forming film layer, master is passed through mouth and is passed through process gas to processing chamber always, when the deviation post of wafer rotates to
When side towards gas supply unit, auxiliary is passed through mouth and starts to be passed through process gas to processing chamber.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of epitaxial device, which is characterized in that including：
Processing chamber；
Base station in processing chamber, the base station is for fixing wafer and the wafer being driven to rotate；
Position detection unit, whether the wafer that the position detection unit is used to detect the placement on base station shifts, and obtains
Obtain deviation post of the wafer on base station；
Gas supply unit positioned at base station side, the gas supply unit are used to supply process gas into processing chamber,
To form film layer on the surface of wafer, detect that the wafer on base station has offset in position detection unit, when forming film layer,
When the deviation post of wafer rotates to the side towards gas supply unit, gas supply unit increases to be supplied into processing chamber
Answer the amount of process gas.
2. epitaxial device as described in claim 1, which is characterized in that wafer deviation post on base station is wafer in base
The ascending and then descending distributing position of offset on platform, the offset are the edge and base station edge of wafer
Air line distance.
3. epitaxial device as claimed in claim 2, which is characterized in that the base station includes the driving unit being connect with base station,
For driving the base station to rotate.
4. epitaxial device as claimed in claim 2, which is characterized in that the position detection unit includes laser sensing unit,
The laser sensing unit includes laser emission element and light receiving unit, and the laser emission element is for emitting laser, institute
It states light receiving unit and generates electric signal for receiving reflected light, the laser sensor is located at the surface of base station, when base station revolves
When turning, the laser of laser emission element transmitting overlaps at the center of projection on base station surface with the center of base station, and the laser exists
The size of the projection on base station surface be equal to wafer size or laser in the size of the projection on base station surface and the size of wafer
Absolute value of the difference be less than 0.5 centimetre.
5. epitaxial device as claimed in claim 4, which is characterized in that the laser is different from the reflectance factor of crystal column surface
Laser base station surface reflectance factor, light receiving unit receive crystal column surface reflected light and base station surface reflected light when produce
The electric signal of raw varying level.
6. epitaxial device as claimed in claim 5, which is characterized in that the position detection unit further includes base station initial position
Detection unit, the base station initial position detection unit are used to detect initial position when base station rotation, the base station initial bit
Detection unit distance between laser sensor, base station and gas supply unit is set to fix；The position testing unit
Member further includes control unit, and described control unit at the uniform velocity rotates a circle base station base station from initial position when returning to initial position
0 degree to 360 degree of position mark is carried out, and obtains laser sensing unit and the corresponding position mark of gas supply unit.
7. epitaxial device as claimed in claim 6, which is characterized in that when carrying out the detection of deviation post, the laser
Sense cell position is kept fixed, and the base station at the uniform velocity rotates at least one week under the driving of driving unit, described control unit root
Two are obtained according to the signal of mutation and the detection of base station initial position detection unit of the level of the electric signal of laser sensing unit detection
The position mark of a different angle, the region between two Difference angles mark is deviation post.
8. epitaxial device as claimed in claim 7, which is characterized in that described control unit rotates to gas in deviation post and supplies
When answering the corresponding position of unit, the instruction for adjusting gas supply is sent to gas supply unit, the gas supply unit exists
When receiving the instruction for adjusting gas supply, increase the amount that process gas is supplied into processing chamber.
9. epitaxial device as claimed in claim 9, which is characterized in that described increase supplies process gas into processing chamber
Amount process includes：The amount for gradually increasing gas technology, is then gradually reduced the amount of gas supply.
10. epitaxial device as described in claim 1, which is characterized in that gas supply unit includes that main mouth and the auxiliary of being passed through is led to
Entrance, the amount process for increasing the supply process gas into processing chamber include：When forming film layer, it is main be passed through mouth always to
Processing chamber is passed through process gas, and when the deviation post of wafer rotates to the side towards gas supply unit, auxiliary is passed through
Mouth starts to be passed through process gas to processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810058600.1A CN108336000A (en) | 2018-01-22 | 2018-01-22 | epitaxial device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810058600.1A CN108336000A (en) | 2018-01-22 | 2018-01-22 | epitaxial device |
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| Publication Number | Publication Date |
|---|---|
| CN108336000A true CN108336000A (en) | 2018-07-27 |
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| CN201810058600.1A Pending CN108336000A (en) | 2018-01-22 | 2018-01-22 | epitaxial device |
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| CN (1) | CN108336000A (en) |
Cited By (4)
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| CN109686684A (en) * | 2018-12-27 | 2019-04-26 | 西安奕斯伟硅片技术有限公司 | A kind of processing method of Silicon Wafer, control device and extension consersion unit |
| CN112201587A (en) * | 2020-09-18 | 2021-01-08 | 全芯智造技术有限公司 | Wafer measuring method |
| CN112216636A (en) * | 2020-08-27 | 2021-01-12 | 西安奕斯伟硅片技术有限公司 | Wafer epitaxial reaction equipment |
| CN114293250A (en) * | 2021-12-29 | 2022-04-08 | 西安奕斯伟材料科技有限公司 | System and method for adjusting silicon wafer position and epitaxial equipment |
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| CN109686684A (en) * | 2018-12-27 | 2019-04-26 | 西安奕斯伟硅片技术有限公司 | A kind of processing method of Silicon Wafer, control device and extension consersion unit |
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| CN114293250B (en) * | 2021-12-29 | 2023-01-06 | 西安奕斯伟材料科技有限公司 | System and method for adjusting position of silicon wafer and epitaxial equipment |
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