CN109686684A - A kind of processing method of Silicon Wafer, control device and extension consersion unit - Google Patents
A kind of processing method of Silicon Wafer, control device and extension consersion unit Download PDFInfo
- Publication number
- CN109686684A CN109686684A CN201811612257.7A CN201811612257A CN109686684A CN 109686684 A CN109686684 A CN 109686684A CN 201811612257 A CN201811612257 A CN 201811612257A CN 109686684 A CN109686684 A CN 109686684A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- pedestal
- support rod
- marking
- duration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The embodiment of the present invention provides processing method, control device and the extension consersion unit of a kind of Silicon Wafer, this method comprises: after Silicon Wafer completes epitaxial deposition, the relative position for adjusting the marking and support rod on Silicon Wafer, support rod, which is contacted with Silicon Wafer, when being imprinted as loading Silicon Wafer to form；Silicon Wafer is raised to designated position from pedestal by support rod.In the embodiment of the present invention, after Silicon Wafer completes epitaxial deposition, first adjust the relative position of the marking and support rod on Silicon Wafer, then Silicon Wafer is raised to designated position by control support rod from pedestal, keep support rod consistent as far as possible in the position for loading Silicon Wafer with contacting when unloading Silicon Wafer with Silicon Wafer, to reduce the area of the Silicon Wafer back side marking, the quality of Silicon Wafer is improved.
Description
Technical field
The present embodiments relate to Silicon Wafer manufacture field, in particular to a kind of processing method of Silicon Wafer, control device
And extension consersion unit.
Background technique
In recent years, with the continuous development of manufacture of semiconductor technique, the most important silicon wafer of semicon industry is proposed more
High requirement.
The Silicon Wafer back support bar marking is one of extension reaction process typical defect, referring to Fig. 1 a to Fig. 1 c, such as
Shown in Fig. 1, Silicon Wafer 11 is placed on support rod 12 by manipulator (not shown), is declined by support rod 12, is made silicon wafer
Circle 11 is loaded into pedestal 13 and (executes according to the sequence of Fig. 1 a → Fig. 1 b → Fig. 1 c), then carries out epitaxial deposition reaction.To
After the reaction was completed, support rod rises for epitaxial deposition, Silicon Wafer is jacked up out of pedestal (i.e. according to the suitable of Fig. 1 c → Fig. 1 b → Fig. 1 a
Sequence executes), finally taken out by manipulator.
In the loading and uninstall process of Silicon Wafer, support rod is in contact with Silicon Wafer, under the conditions of pyroreaction,
The Silicon Wafer back side since the contact of support rod forms the marking, shown as in micromorphology silicon chip back side height stamp positions not
Uniformly.
In the processing method of existing Silicon Wafer, when Silicon Wafer carries out extension reaction, pedestal will in one direction at the uniform velocity
Rotation, in this course, can relatively move between Silicon Wafer and pedestal, lead to the loading and uninstall process in Silicon Wafer
In, there is larger offset in the position that support rod is contacted with Silicon Wafer, and then expands the support rod marking gross area.
Referring to Fig. 1 d, after unloading Silicon Wafer is shown in figure, in the marking that the Silicon Wafer back side is formed, wherein first marking
14 marking to leave in loading process, second marking 15 are the marking left in uninstall process, and Cong Tuzhong is it can be found that first
There are larger spaces between the marking 14 and second marking 15 so that the support rod marking gross area is larger, cause Silicon Wafer quality compared with
It is low.
Summary of the invention
The embodiment of the present invention provides processing method, control device and the extension consersion unit of a kind of Silicon Wafer, solves existing
During Silicon Wafer is processed, the larger problem of the marking formed on Silicon Wafer.
According to an embodiment of the present invention in a first aspect, providing a kind of processing method of Silicon Wafer, which comprises in silicon
After wafer completes epitaxial deposition, the relative position of the marking and support rod on the Silicon Wafer is adjusted, it is described to be imprinted as loading institute
The support rod, which is contacted with the Silicon Wafer, when stating Silicon Wafer to form；The Silicon Wafer is lifted from pedestal by support rod
To designated position.
Optionally, the relative position of the marking on the adjustment Silicon Wafer and support rod, comprising: obtain the silicon wafer
The second position of the first position of the marking on circle and presently described support rod；According to the first position and the second
It sets, adjusts the relative position of the marking and support rod on the Silicon Wafer.
Optionally, described according to the first position and the second position, adjust the marking and branch on the Silicon Wafer
The relative position of strut, comprising: determine the spacing between the first position and the second position；According to the spacing, adjust
The relative position of the marking and support rod on the whole Silicon Wafer.
Optionally, the relative position of the marking on the adjustment Silicon Wafer and support rod, comprising: control the pedestal
It is rotated in a first direction；Wherein, the first direction and second direction are on the contrary, the second direction is outside the Silicon Wafer carries out
Prolong the rotation direction of pedestal when deposition.
Optionally, the control pedestal is rotated in a first direction, comprising: controls the pedestal according to preset rotation speed edge
The first direction rotation.
Optionally, described by support rod by the Silicon Wafer before being raised to designated position in pedestal, the side
Method further include: obtain the duration that the pedestal is rotated along the first direction；Judge the duration whether be greater than or
Equal to preset time；When the duration being greater than or equal to the preset time, controls the pedestal and stop operating, then
Execute the step of obtaining the duration that the pedestal is rotated along the first direction；It is less than described preset when the duration
When the time, re-executes and described judge the pedestal along when the duration that the first direction rotates whether being more than or equal to default
Between the step of.
Optionally, the preset rotation speed is 27~29 revs/min；The preset time is 3.5~4.5 seconds.
Second aspect according to an embodiment of the present invention provides a kind of control device, comprising: adjustment module, in silicon wafer
After circle completes epitaxial deposition, the relative position of the marking and support rod on the Silicon Wafer is adjusted, it is described to be imprinted as described in loading
The support rod, which is contacted with the Silicon Wafer, when Silicon Wafer to form；First control module, for passing through support rod for the silicon
Wafer is raised to designated position from pedestal.
Optionally, the adjustment module, comprising: acquiring unit, for obtaining first of the marking on the Silicon Wafer
Set the second position with presently described support rod；Adjustment unit, for according to the first position and the second position, adjustment
The relative position of the marking and support rod on the Silicon Wafer.
Optionally, the adjustment unit, comprising: subelement is determined, for determining the first position and the second
Spacing between setting；Subelement is adjusted, is used to adjust the opposite of the marking and support rod on the Silicon Wafer according to the spacing
Position.
Optionally, the adjustment module, comprising: control unit is rotated in a first direction for controlling the pedestal；Its
In, the first direction and second direction are on the contrary, the second direction is that the Silicon Wafer carries out pedestal when epitaxial deposition
Rotation direction.
Optionally, described control unit is also used to control the pedestal and rotates according to preset rotation speed along the first direction.
Optionally, the control device further include: obtain module, rotated for obtaining the pedestal along the first direction
Duration；Judgment module, for judging whether the duration is greater than or equal to preset time；Second control module,
For controlling the pedestal and stopping operating, and indicate described first when the duration being more than or equal to the preset time
Control module executes the step of Silicon Wafer is raised to designated position from pedestal by support rod；Second control module,
It is also used to when the duration being less than the preset time, indicates that the acquisition module re-executes the acquisition base
The step of seat is along the duration of first direction rotation.
Optionally, the preset rotation speed is 27~29 revs/min；The preset time is 3.5~4.5 seconds.
The third aspect according to an embodiment of the present invention provides a kind of extension consersion unit, including pedestal and support rod, special
Sign is that the extension consersion unit further includes the control device as described in second aspect.
Optionally, the extension consersion unit further include: the first driving device being electrically connected with the control device respectively
With the second driving device, the first driving device and the pedestal are drivingly connected, second driving device and the support
Bar is drivingly connected, wherein the first driving device, for driving the pedestal to rotate along first direction or second direction, and institute
First direction and second direction are stated on the contrary, the second direction is the rotation that the Silicon Wafer carries out pedestal when epitaxial deposition
Direction；Second driving device, for driving the support rod that the Silicon Wafer is raised to specific bit from the pedestal
It sets.
In the embodiment of the present invention, after Silicon Wafer completes epitaxial deposition, position of the Silicon Wafer in pedestal is first adjusted, then
It controls support rod and Silicon Wafer is raised to designated position from pedestal, support rod can be made to load Silicon Wafer and unloading Silicon Wafer
When the position that is contacted with Silicon Wafer it is consistent as far as possible, to reduce the area of the Silicon Wafer back side marking, improve the quality of Silicon Wafer.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, needed in being described below to the embodiment of the present invention
Attached drawing to be used is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention,
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
Other attached drawings.
Fig. 1 a is existing loading/unloading Silicon Wafer one of schematic diagram of a scenario；
Fig. 1 b is the two of existing loading/unloading Silicon Wafer schematic diagram of a scenario；
Fig. 1 c is the three of existing loading/unloading Silicon Wafer schematic diagram of a scenario；
Fig. 1 d is existing Silicon Wafer back side marking schematic diagram；
Fig. 2 is one of the flow diagram of processing method of Silicon Wafer provided in an embodiment of the present invention；
Fig. 3 is the two of the flow diagram of the processing method of Silicon Wafer provided in an embodiment of the present invention；
Fig. 4 a is the three of the flow diagram of the processing method of Silicon Wafer provided in an embodiment of the present invention；
Fig. 4 b is the correspondence diagram of pedestal revolving speed and marking interval provided in an embodiment of the present invention；
Fig. 4 c is the correspondence diagram of pedestal rotation duration and marking interval provided in an embodiment of the present invention；
Fig. 5 is controling device structure diagram provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Referring to fig. 2, the embodiment of the present invention provides a kind of processing method of Silicon Wafer, the specific steps are as follows:
Step 201: after Silicon Wafer completes epitaxial deposition, adjusting the relative position of the marking and support rod on Silicon Wafer；
In embodiments of the present invention, after Silicon Wafer completes epitaxial deposition, to the marking and support rod on Silicon Wafer
Relative position is adjusted, the position for contacting support rod with Silicon Wafer when unloading Silicon Wafer, is loading silicon wafer with support rod
The position that bowlder is contacted with Silicon Wafer keeps consistent as far as possible, in this way, support rod contacts the position for leaving the marking with Silicon Wafer twice
It is identical, it realizes and reduces the Silicon Wafer back side marking.
Step 202: Silicon Wafer is raised to by designated position from pedestal by support rod.
In the embodiment of the present invention, after Silicon Wafer completes epitaxial deposition, position of the Silicon Wafer in pedestal is first adjusted, then
Control support rod and Silicon Wafer be raised to designated position from pedestal, make support rod when loading Silicon Wafer and unloading Silicon Wafer with
The position of Silicon Wafer contact is consistent as far as possible, to reduce the area of the Silicon Wafer back side marking, improves the quality of Silicon Wafer.
Referring to Fig. 3, the embodiment of the present invention provides a kind of processing method of Silicon Wafer, the specific steps are as follows:
Step 301: after Silicon Wafer completes epitaxial deposition, obtaining first position and the support rod of the marking on Silicon Wafer
The second position；
In embodiments of the present invention, the position of the marking left when support rod loading Silicon Wafer when first position, due to base
Seat rotation, so that shifting between the first position and the second position of support rod, therefore, it is necessary to obtain the print on Silicon Wafer
The first position of note and the second position of support rod.Existing method can be used and obtain the first position and the second position, such as:
Image collecting device etc. is set on pedestal, and the embodiment of the present invention does not do specifically the mode for obtaining the first position and the second position
It limits.
Step 302: according to first position and the second position, adjusting the relative position of the marking and support rod on Silicon Wafer；
In embodiments of the present invention, according to first position and the second position, the adjustment amount to Silicon Wafer position is determined.Specifically
Ground is adjusted Silicon Wafer position according to the spacing between first position and the second position.
Step 303: Silicon Wafer is raised to by designated position from pedestal by support rod.
In the embodiment of the present invention, according to the second position of the first position of the marking on Silicon Wafer and support rod, to adjustment
The relative position of the marking and support rod on Silicon Wafer is adjusted, make support rod load Silicon Wafer and unloading Silicon Wafer when with
The position of Silicon Wafer contact is consistent as far as possible, to reduce the area of the Silicon Wafer back side marking, improves the quality of Silicon Wafer.
A referring to fig. 4, the embodiment of the present invention provides the process of position of another adjustment Silicon Wafer in pedestal, specific to walk
It is rapid as follows:
Step 401: after Silicon Wafer completes epitaxial deposition, control pedestal is rotated in a first direction；
In embodiments of the present invention, first direction and second direction are on the contrary, the second direction is that Silicon Wafer progress extension is heavy
The rotation direction of pedestal when product.After Silicon Wafer completes epitaxial deposition, control pedestal is inverted, and is rotated backward by pedestal,
The positional shift of Silicon Wafer is compensated.
Preferably, control pedestal is rotated in a first direction according to preset rotation speed.
Further, b referring to fig. 4 is shown by pair between the determining pedestal revolving speed of test and marking spacing in figure
It should be related to, as seen from the figure, when setting 27~29 revs/min for preset rotation speed, marking spacing can be made minimum, wherein most preferably pre-
If revolving speed is 28 revs/min.
Step 402: obtaining the duration that pedestal is rotated in a first direction；
Step 403: judging whether the duration is more than or equal to preset time, if so, executing step 404, otherwise, return is held
Row step 402；
Step 404: control pedestal stops operating, and then executes step 405；
In embodiments of the present invention, the duration that pedestal is rotated in a first direction is monitored, it is big when the duration
When being equal to preset time, indicate to have reached requirement to the positional shift compensation of Silicon Wafer by pedestal reversion, control pedestal stops
Rotation stop is dynamic.
C referring to fig. 4 is shown in figure when pedestal revolving speed is 28 revs/min, by the determining rotation duration of test with
Corresponding relationship between the marking spacing when setting 3.5~4.5 seconds for preset time, can make marking spacing most as seen from the figure
It is small, wherein most preferably preset time is 4 seconds.
Step 405: Silicon Wafer is raised to by designated position from pedestal by support rod.
In the embodiment of the present invention, rotated backward by control pedestal according to preset rotation speed, and rotation time is more than or equal in advance
If the time, positional shift of the Silicon Wafer in pedestal is compensated, makes support rod when loading Silicon Wafer and unloading Silicon Wafer
The position contacted with Silicon Wafer is consistent as far as possible, to reduce the area of the Silicon Wafer back side marking, improves the quality of Silicon Wafer.
Referring to Fig. 5, the embodiment of the present invention provides a kind of control device 500, comprising:
Module 501 is adjusted, for adjusting the marking and support rod on the Silicon Wafer after Silicon Wafer completes epitaxial deposition
Relative position, the support rod described when being imprinted as loading the Silicon Wafer is contacted with the Silicon Wafer to be formed；
First control module 502, for the Silicon Wafer to be raised to designated position from pedestal by support rod.
Optionally, the adjustment module 501, comprising:
Acquiring unit 5011, for obtaining the first position of the marking on the Silicon Wafer and the second of the support rod
It sets, the support rod described when being imprinted as loading the Silicon Wafer is contacted with the Silicon Wafer to be formed；
Adjustment unit 5012, for adjusting the print on the Silicon Wafer according to the first position and the second position
The relative position of note and support rod.
Optionally, the adjustment unit 5012, comprising:
Subelement 50121 is determined, for determining the spacing between the first position and the second position；
Subelement 50122 is adjusted, is used to adjust the opposite of the marking and support rod on the Silicon Wafer according to the spacing
Position.
Optionally, the adjustment module 501, comprising:
Control unit 5013 is rotated in a first direction for controlling the pedestal；
Wherein, the first direction and second direction are on the contrary, the second direction is that the Silicon Wafer carries out epitaxial deposition
The rotation direction of Shi Suoshu pedestal.
Optionally, described control unit 5013 are also used to control the pedestal according to preset rotation speed along the first direction
Rotation.
Optionally, the control device 500 further include:
Obtain module 503, the duration rotated for obtaining the pedestal along the first direction；
Judgment module 504, for judging whether the duration is greater than or equal to preset time；
Second control module 505, for controlling the pedestal and stopping when the duration being greater than or equal to preset time
Rotation stop is dynamic, and it is specified to indicate that the Silicon Wafer is raised to by the execution of the first control module 502 by support rod from pedestal
The step of position；
Second control module 505 is also used to indicate the acquisition module when the duration being less than preset time
503 re-execute described the step of obtaining the duration that the pedestal is rotated along the first direction.
Optionally, the preset rotation speed is 27~29 revs/min；The preset time is 3.5~4.5 seconds.
In the embodiment of the present invention, after Silicon Wafer completes epitaxial deposition, the marking and support rod on Silicon Wafer are first adjusted
Then relative position controls support rod and Silicon Wafer is raised to designated position from pedestal, make support rod load Silicon Wafer with
The position contacted when unloading Silicon Wafer with Silicon Wafer is consistent as far as possible, to reduce the area of the Silicon Wafer back side marking, improves silicon wafer
Round quality.
The embodiment of the present invention also provides a kind of extension consersion unit, including pedestal and support rod, the extension consersion unit
It further include such as above-mentioned control device.
Optionally, the extension consersion unit further include: the first driving device being electrically connected with the control device respectively
With the second driving device, the first driving device and the pedestal are drivingly connected, second driving device and the support
Bar is drivingly connected；
Wherein, the first driving device, for driving the pedestal to rotate along first direction or second direction, described the
One direction and second direction are on the contrary, the second direction is the rotation side that the Silicon Wafer carries out pedestal when epitaxial deposition
To；
Second driving device, it is specified for driving the support rod to be raised to the Silicon Wafer from the pedestal
Position.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form belongs within protection of the invention.
Claims (16)
1. a kind of processing method of Silicon Wafer, which is characterized in that the described method includes:
After Silicon Wafer completes epitaxial deposition, the relative position of the marking and support rod on the Silicon Wafer, the marking are adjusted
The support rod contacts to be formed with the Silicon Wafer when loading the Silicon Wafer；
The Silicon Wafer is raised to designated position from pedestal by support rod.
2. processing method according to claim 1, which is characterized in that the marking and support on the adjustment Silicon Wafer
The relative position of bar, comprising:
Obtain the first position of the marking on the Silicon Wafer and the second position of presently described support rod；
According to the first position and the second position, the relative position of the marking and support rod on the Silicon Wafer is adjusted.
3. according to the method described in claim 2, it is characterized in that, described according to the first position and the second position,
Adjust the relative position of the marking and support rod on the Silicon Wafer, comprising:
Determine the spacing between the first position and the second position；
According to the spacing, the relative position of the marking and support rod on the Silicon Wafer is adjusted.
4. processing method according to claim 1, which is characterized in that the marking and support on the adjustment Silicon Wafer
The relative position of bar, comprising:
The pedestal is controlled to be rotated in a first direction；
Wherein, the first direction and second direction are on the contrary, the second direction carries out epitaxial deposition when institute for the Silicon Wafer
State the rotation direction of pedestal.
5. according to the method described in claim 4, it is characterized in that, the control pedestal is rotated in a first direction, comprising:
It controls the pedestal and is rotated according to preset rotation speed along the first direction.
6. according to the method described in claim 5, it is characterized in that, it is described by support rod by the Silicon Wafer from pedestal
It is raised to before designated position, the method also includes:
Obtain the duration that the pedestal is rotated along the first direction；
Judge whether the duration is greater than or equal to preset time；
When the duration being greater than or equal to the preset time, controls the pedestal and stop operating, then execute acquisition
The step of duration that the pedestal is rotated along the first direction；
When the duration being less than the preset time, re-executes the judgement pedestal and turn along the first direction
The step of whether dynamic duration is more than or equal to preset time.
7. according to the method described in claim 6, it is characterized in that,
The preset rotation speed is 27~29 revs/min；
The preset time is 3.5~4.5 seconds.
8. a kind of control device characterized by comprising
Module is adjusted, for after Silicon Wafer completes epitaxial deposition, adjusting the opposite of the marking on the Silicon Wafer and support rod
Position, the support rod described when being imprinted as loading the Silicon Wafer is contacted with the Silicon Wafer to be formed；
First control module, for the Silicon Wafer to be raised to designated position from pedestal by support rod.
9. control device according to claim 8, which is characterized in that the adjustment module, comprising:
Acquiring unit, for obtaining the first position of the marking on the Silicon Wafer and the second position of presently described support rod；
Adjustment unit, for adjusting the marking on the Silicon Wafer and support according to the first position and the second position
The relative position of bar.
10. control device according to claim 9, which is characterized in that the adjustment unit, comprising:
Subelement is determined, for determining the spacing between the first position and the second position；
Subelement is adjusted, for adjusting the relative position of the marking and support rod on the Silicon Wafer according to the spacing.
11. control device according to claim 8, which is characterized in that the adjustment module, comprising:
Control unit is rotated in a first direction for controlling the pedestal；
Wherein, the first direction and second direction are on the contrary, the second direction carries out epitaxial deposition when institute for the Silicon Wafer
State the rotation direction of pedestal.
12. control device according to claim 11, which is characterized in that
Described control unit is also used to control the pedestal and rotates according to preset rotation speed along the first direction.
13. control device according to claim 12, which is characterized in that the control device further include:
Obtain module, the duration rotated for obtaining the pedestal along the first direction；
Judgment module, for judging whether the duration is greater than or equal to preset time；
Second control module stops turning for when the duration being more than or equal to the preset time, controlling the pedestal
It is dynamic, and indicate that first control module executes the step that the Silicon Wafer is raised to designated position by support rod from pedestal
Suddenly；
Second control module is also used to indicate the acquisition module again when the duration being less than the preset time
Execute described the step of obtaining the duration that the pedestal is rotated along the first direction.
14. control device according to claim 13, which is characterized in that
The preset rotation speed is 27~29 revs/min；
The preset time is 3.5~4.5 seconds.
15. a kind of extension consersion unit, including pedestal and support rod, which is characterized in that the extension consersion unit further include as
The described in any item control devices of claim 8 to 14.
16. extension consersion unit according to claim 15, which is characterized in that the extension consersion unit further include: point
The first driving device and the second driving device not being electrically connected with the control device, the first driving device and the pedestal
It is drivingly connected, second driving device and the support rod are drivingly connected, wherein
The first driving device, for driving the pedestal to rotate along first direction or second direction, the first direction with
Second direction is on the contrary, the second direction is the rotation direction that the Silicon Wafer carries out pedestal when epitaxial deposition；
Second driving device, for driving the support rod that the Silicon Wafer is raised to specific bit from the pedestal
It sets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811612257.7A CN109686684B (en) | 2018-12-27 | 2018-12-27 | Silicon wafer processing method, control device and epitaxial reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811612257.7A CN109686684B (en) | 2018-12-27 | 2018-12-27 | Silicon wafer processing method, control device and epitaxial reaction equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109686684A true CN109686684A (en) | 2019-04-26 |
| CN109686684B CN109686684B (en) | 2020-08-28 |
Family
ID=66190534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811612257.7A Active CN109686684B (en) | 2018-12-27 | 2018-12-27 | Silicon wafer processing method, control device and epitaxial reaction equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109686684B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101261285A (en) * | 2007-03-06 | 2008-09-10 | 台湾积体电路制造股份有限公司 | Method and system for automatically managing probe mark shifts |
| JP2008276919A (en) * | 2007-03-30 | 2008-11-13 | Pioneer Electronic Corp | Imprint device and imprint method |
| CN101351878A (en) * | 2006-09-05 | 2009-01-21 | 东京毅力科创株式会社 | Substrate transfer device, substrate processing apparatus and substrate transfer method |
| CN103021919A (en) * | 2012-12-27 | 2013-04-03 | 上海交通大学 | Wafer prealignment device |
| CN105097609A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thimble mechanism, reaction cavity and semiconductor processing apparatus |
| CN107851560A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal, epitaxial growth device and epitaxial wafer |
| CN107851561A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal and epitaxial growth device |
| CN107863311A (en) * | 2017-11-03 | 2018-03-30 | 上海华力微电子有限公司 | It is a kind of to detect and correct wafer and the device and method of cavity objective table skew |
| CN108336000A (en) * | 2018-01-22 | 2018-07-27 | 德淮半导体有限公司 | epitaxial device |
-
2018
- 2018-12-27 CN CN201811612257.7A patent/CN109686684B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101351878A (en) * | 2006-09-05 | 2009-01-21 | 东京毅力科创株式会社 | Substrate transfer device, substrate processing apparatus and substrate transfer method |
| CN101261285A (en) * | 2007-03-06 | 2008-09-10 | 台湾积体电路制造股份有限公司 | Method and system for automatically managing probe mark shifts |
| JP2008276919A (en) * | 2007-03-30 | 2008-11-13 | Pioneer Electronic Corp | Imprint device and imprint method |
| CN103021919A (en) * | 2012-12-27 | 2013-04-03 | 上海交通大学 | Wafer prealignment device |
| CN105097609A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thimble mechanism, reaction cavity and semiconductor processing apparatus |
| CN107851560A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal, epitaxial growth device and epitaxial wafer |
| CN107851561A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal and epitaxial growth device |
| CN107863311A (en) * | 2017-11-03 | 2018-03-30 | 上海华力微电子有限公司 | It is a kind of to detect and correct wafer and the device and method of cavity objective table skew |
| CN108336000A (en) * | 2018-01-22 | 2018-07-27 | 德淮半导体有限公司 | epitaxial device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109686684B (en) | 2020-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9863977B2 (en) | Method of contacting substrate with probe card | |
| CN109741784B (en) | Memory wafer test method | |
| US7362116B1 (en) | Method for probing impact sensitive and thin layered substrate | |
| CN105983904B (en) | Grinding device and its control method and finishing condition output method | |
| GB2579756A (en) | Optimization method for integrated circuit wafer test | |
| US20100040779A1 (en) | Liquid processing apparatus, liquid processing method and storage medium | |
| CN109786284A (en) | Substrate processing method using same and substrate board treatment | |
| JP2005203786A (en) | Substrate processing method and apparatus | |
| KR20010067151A (en) | Piezo-actuated cmp carrier | |
| US10434621B2 (en) | Workpiece processing apparatus and workpiece processing method | |
| CN106663597B (en) | The manufacturing method of SOI wafer | |
| CN101838848A (en) | The production method of epitaxially coated silicon wafer and epitaxially coated silicon wafer | |
| CN109686684A (en) | A kind of processing method of Silicon Wafer, control device and extension consersion unit | |
| KR100441336B1 (en) | Apparatus and method for lapping magnetic heads | |
| US20200269383A1 (en) | Substrate polishing device and substrate polishing method | |
| DE102007016553A1 (en) | Device and method for the electrical contacting of semiconductor devices on a wafer | |
| CN111443320A (en) | Probe self-calibration system and method thereof | |
| CN103972139B (en) | It is a kind of to improve the calibration method of wafer spike annealing homogeneity | |
| CN101894775B (en) | Method for detecting stability of spike anneal processing device | |
| CN105225995B (en) | Wafer transmission set and processing chamber | |
| JP2009142973A (en) | Grinding device | |
| KR101453683B1 (en) | Apparatus and method of griding wafer edge | |
| TW201030875A (en) | Method and machine for examining wafers | |
| JP2003022992A (en) | Device and method for producing semiconductor | |
| JPH04224037A (en) | Apparatus and method for setting coil spring |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |