JP2003022992A - Device and method for producing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform suitable working by means of chemical and mechanical polishing corresponding to the distribution of film thickness before working. SOLUTION: In the semiconductor production device for performing working by means of chemical and mechanical polishing by executing scan operation by relatively moving a wafer 2 and a pad 1 smaller than the wafer 2 all over the surface of the wafer 2, this device is provided with a working control unit 5 and a working condition setting part 6, for correcting and calculating a polishing quantity required for each of points on the wafer 2 from the film thickness distribution of the wafer 2 before working and working the wafer 2 by the pad 1 corresponding to the calculated corrected polishing quantity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method, and more particularly to a chemical mechanical polishing method (hereinafter
The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for performing processing by CMP).

[0002]

2. Description of the Related Art In the prior art, as shown in FIG. 6, a pad 1 larger than a wafer 2 is brought into contact with the polishing surface of the wafer 2 and the pad 1 and the wafer 2 are rotated while spraying a slurry on the pad 1. By doing so, CMP is performed.

The conventional technique has a problem in that the polishing rate is higher in the central portion and the peripheral portion of the wafer. In addition, there is a problem in that the flatness is not improved by the CMP because the entire surface is uniformly polished except the peripheral portion, and the film thickness variation generated in the previous step remains almost unchanged even after the CMP. In order to CMP the entire surface of the wafer, it is necessary to use a softer pad, but in this case, dishing and erosion occur with respect to a large pattern in the chip.

[0004]

In the present invention, CMP is performed by scanning a pad smaller than the wafer on the wafer. Thereby, the central part / peripheral part of the wafer can be polished independently. Also, the amount of polishing at each point on the wafer surface can be controlled arbitrarily,
The variations generated in the previous process can be absorbed. Since the polishing area is small, a firm pad can be selected, and dishing and erosion can be reduced.

The present invention is intended to provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method capable of performing appropriate processing by a chemical mechanical polishing method according to a film thickness distribution before processing.

[0006]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus for performing a chemical mechanical polishing process by performing a scanning operation on the entire surface of a wafer with a pad smaller than the wafer. Detecting means for detecting the film thickness distribution in the pad and the film thickness distribution detected by the detecting means for correcting and calculating a necessary polishing amount at each point of the wafer, and the pad according to the calculated corrected polishing amount. The processing control means for processing the wafer by the above is provided.

A semiconductor manufacturing apparatus according to a second aspect of the present invention is the semiconductor manufacturing apparatus according to the first aspect, wherein a wafer having a concave pad shape is used to process a wafer.

A semiconductor manufacturing apparatus according to a third aspect of the present invention is the semiconductor manufacturing apparatus according to the first aspect, wherein a wafer having a convex pad shape is used to process a wafer.

In a semiconductor manufacturing apparatus according to a fourth aspect of the present invention, in the first to third aspects, a plurality of pads are provided, and a scanning operation is performed on the entire surface of the wafer with the plurality of pads to process the wafer. It is a thing.

In the semiconductor manufacturing apparatus according to the fifth aspect of the present invention, in the first to fourth aspects of the invention, the wafer itself is also rotated so as to move its processing surface.

In the semiconductor manufacturing method according to the sixth aspect of the present invention, by scanning the entire surface of the wafer with a pad smaller than the wafer, the film thickness distribution on the wafer is detected when processing by the chemical mechanical polishing method, The necessary polishing amount at each point of the wafer is corrected and calculated from the detected film thickness distribution, and the wafer is processed by the pad according to the calculated corrected polishing amount.

According to a seventh aspect of the present invention, there is provided a semiconductor manufacturing method according to the sixth aspect, wherein a wafer having a concave pad shape is used to process a wafer.

According to an eighth aspect of the present invention, there is provided a semiconductor manufacturing method according to the sixth aspect, wherein a wafer having a convex pad shape is used to process a wafer.

In the semiconductor manufacturing method according to the ninth invention, in the sixth to eighth inventions, pads of different materials, hardness and sizes are sequentially formed on the same polishing station.
Processing is performed by a chemical mechanical polishing method.

In the semiconductor manufacturing method according to the tenth invention,
In the sixth to ninth inventions, the scanning operation is performed on the entire surface of the wafer by a plurality of pads.

In the semiconductor manufacturing method according to the eleventh invention,
In the sixth to tenth aspects, the wafer itself is also rotated so as to move its processing surface.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. Embodiment 1 according to the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the semiconductor manufacturing apparatus according to the first embodiment. FIG. 2 is a side view showing the configuration of the semiconductor manufacturing apparatus according to the first embodiment. In the figure, 1 is a pad,
Reference numeral 2 is a wafer, 4 is a pad receiver, 5 is a processing control unit, and 6 is a processing condition setting unit.

The disc-shaped pad 1 rotates about its axis, and is driven and controlled by the processing control section 5 so that the axis center follows the locus A shown in FIG. The pad 1 performs a CMP process by performing a scanning operation on the entire surface of the wafer 2 by moving the pad 2 relative to the wafer 2.
The polishing operation is performed. The processing condition setting unit 6 uses CMP
The film thickness distribution on the unprocessed wafer 2 is detected, the necessary polishing amount at each point on the wafer 2 is corrected and calculated from the detected film thickness distribution, and the pad 1 is used according to the calculated polishing amount. A control signal is supplied to the processing controller 5 so as to process the wafer 2. The processing control unit 5 drives and controls the pad 1 according to the control signal supplied from the processing condition setting unit 6,
The desired CMP processing is performed on the wafer 2.

In the first embodiment, a pad 1 smaller than the wafer 2 is used, and when the wafer 2 is scanned while rotating the pad 1, the required polishing amount at each point is determined from the film thickness distribution before CMP. Is calculated, and the polishing amount at each point on the surface of the wafer 2 is adjusted by scanning at a constant speed while adjusting the rotation speed and pressure of the pad 1.

Alternatively, the amount of polishing at each point on the surface of the wafer 2 is adjusted by keeping the rotation speed and pressure of the pad 1 constant and adjusting the scan speed of the pad.

In the first embodiment, since the amount of polishing at each point of the wafer 2 can be controlled, the CMP processing can be performed while improving and absorbing the variation in the previous process.

According to the first embodiment of the present invention, the pad 1 smaller than the wafer 2 is used to perform the scanning operation by the relative movement of the wafer 2 and the pad 1 on the entire surface of the wafer 2, thereby performing the chemical mechanical polishing method. In a semiconductor manufacturing apparatus for processing, a necessary polishing amount at each point of the wafer 2 is corrected and calculated from a film thickness distribution before processing on the wafer 2, and the wafer formed by the pad 1 according to the calculated corrected polishing amount. Since the processing control unit including the processing control unit 5 and the processing condition setting unit 6 for performing the processing 2 is provided, appropriate processing can be performed by the chemical mechanical polishing method according to the film thickness distribution before processing, and the wafer in the previous step It is possible to provide a semiconductor manufacturing apparatus capable of performing accurate processing by a chemical mechanical polishing method while improving and absorbing the variation in the film thickness.

Further, according to the first embodiment of the present invention, by performing the scanning operation on the entire surface of the wafer 2 with the pad 1 smaller than the wafer 2, the film thickness of the wafer 2 in performing the processing by the chemical mechanical polishing method. The distribution is detected, the required polishing amount at each point of the wafer 2 is corrected and calculated from the detected film thickness distribution, and the wafer 2 is processed by the pad 1 according to the calculated corrected polishing amount. Therefore, appropriate processing by chemical mechanical polishing method is performed according to the film thickness distribution before processing, and accurate processing by chemical mechanical polishing method can be performed while improving and absorbing the film thickness variation of the wafer in the previous process. A semiconductor manufacturing method can be provided.

Embodiment 2. A second embodiment according to the present invention will be described with reference to FIG. FIG. 3 is a side view showing the configuration of the semiconductor manufacturing apparatus according to the second embodiment. In the second embodiment, the configurations and methods other than the peculiar configurations and methods described here include the same configurations and methods as those of the first embodiment, and have the same operation.
In the drawings, the same or corresponding parts are designated by the same reference numerals.

In the second embodiment, the shape of the facing portion of the pad 1 in contact with the wafer 2 is improved.

In FIG. 3 (a), the shape of the facing portion of the pad 1 contacting the wafer 2 is ring-shaped, and the pad 1 has a concave pad shape so that the pad / wafer contact pressure is the same. Only by doing so, CMP processing is performed.

In FIG. 3B, by making the shape of the facing portion of the pad 1 in contact with the wafer 2 convex, the contact pressure on the wafer at the peripheral portion of the pad is reduced, so that the entire surface of the pad The amount of polishing is made equal.

In the second embodiment, the polishing amount within the pad / wafer contact can be made uniform.

According to the second embodiment of the present invention, in the structure of the first embodiment, since the wafer 1 is processed by the pad 1 having the concave pad shape, the wafer 1 is processed between the pad 1 and the wafer 2. It is possible to provide a semiconductor manufacturing apparatus that can perform processing only in a portion having the same contact pressure and can perform appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

Further, according to the second embodiment of the present invention, since the wafer is processed by the pad having the convex pad shape in the configuration of the first embodiment, the wafer 2 is entirely covered with the pad 1. It is possible to provide a semiconductor manufacturing apparatus capable of equalizing the amount of polishing and performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

Further, according to the second embodiment of the present invention, in the method according to the first embodiment, since the wafer is processed by the pad having the concave pad shape, the wafer between the pad 1 and the wafer 2 is processed. It is possible to provide a semiconductor manufacturing method capable of performing processing only in a portion having the same contact pressure and capable of performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

According to the second embodiment of the present invention, in the method of the first embodiment, since the wafer is processed by the pad having the convex pad shape, the wafer 2 is polished on the entire surface of the pad 1. It is possible to provide a semiconductor manufacturing method in which the amounts can be made equal and appropriate processing can be performed by the chemical mechanical polishing method according to the film thickness distribution before processing.

Embodiment 3. A third embodiment according to the present invention will be described with reference to FIG. FIG. 4 is a plan view showing the configuration of the semiconductor manufacturing apparatus according to the third embodiment. In the third embodiment, the configuration and method other than the peculiar configuration and method described here include the same configuration and method as those in the first embodiment, and have the same operation.
In the drawings, the same or corresponding parts are designated by the same reference numerals.

In the third embodiment, the pad 1 smaller than the wafer is used as in the first embodiment, and the pad 1 is used.
When the wafer 2 is scanned while rotating the
As shown in, after the scanning operation by the pad 1, the material, hardness, and
The pads 3 having different sizes are continuously scanned.
You may use three or more types of pads. Further, the number of rotations, the pressure, and the scanning speed during scanning are adjusted for each pad 1 and pad 3.

In the third embodiment, it is possible to selectively use a pad having a high rate in the middle stage and a pad in which dishing and erosion hardly occur in the final stage.

According to the third embodiment of the present invention, in the method of the first embodiment, the pads 1 and 3 having different materials, hardness and sizes are sequentially processed by the chemical mechanical polishing method on the same polishing station. Therefore, a semiconductor manufacturing method that can perform appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing and can perform accurate processing adapted to the processing step with a pad according to the processing step is provided. can do.

Fourth Embodiment A fourth embodiment according to the present invention will be described with reference to FIG. FIG. 5 is a plan view showing the structure of the semiconductor manufacturing apparatus according to the fourth embodiment. In the fourth embodiment, the configurations and methods other than the peculiar configurations and methods described here include the same configurations and methods as those in the first to third embodiments, and have similar operations. . In the drawings, the same or corresponding parts are designated by the same reference numerals.

In the fourth embodiment, as in the first to third embodiments, when the pad 1 smaller than the wafer is used and the pad 2 is rotated to scan the wafer 2, as shown in FIG. The pad supporting head 7 having a plurality of pads 1 scans the wafer 2 while contacting the plurality of pads 1 with the wafer 2 so as to be processed.

In this embodiment, in addition to the same effects as the first embodiment, the efficiency can be improved.

According to the fourth embodiment of the present invention, a plurality of pads 1 attached to the pad supporting head 7 are provided in the structure of the first to third embodiments,
Since the wafer 2 is processed by performing the scanning operation on the entire surface of the wafer with the plurality of pads 1, it is possible to perform the appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before the processing, and to perform the efficient processing. It is possible to provide a semiconductor manufacturing apparatus capable of performing the above.

Further, according to Embodiment 4 of the present invention, in the method of Embodiments 1 to 3,
Since the plurality of pads 1 attached to the pad support head 7 are configured to perform the scanning operation on the entire surface of the wafer, appropriate processing can be performed by the chemical mechanical polishing method according to the film thickness distribution before processing, and the efficiency can be improved. It is possible to provide a semiconductor manufacturing method capable of various processing.

Embodiment 5. A fifth embodiment according to the present invention will be described. In the fifth embodiment, the configurations and methods other than the peculiar configurations and methods described here include the same configurations and methods as those in the first to fourth embodiments, and have the same operation. .

In the fifth embodiment, in each of the first to fourth embodiments, the wafer 2 itself is also rotated so as to move its processing surface.

In the fifth embodiment, the first to fourth embodiments are provided.
In addition to the same effect as, you can increase the efficiency.

According to the fifth embodiment of the present invention, in the first to fourth inventions, the wafer 2 itself is also rotated so as to move its processing surface. It is possible to provide a semiconductor manufacturing apparatus that can perform appropriate processing by the chemical mechanical polishing method and can perform more efficient processing.

Further, according to the fifth embodiment of the present invention, in the sixth to tenth inventions, the wafer 2 itself is also rotated so as to move its processing surface. According to the above, it is possible to provide a semiconductor manufacturing method capable of performing appropriate processing by a chemical mechanical polishing method and performing more efficient processing.

[0047]

According to the first aspect of the present invention, a semiconductor manufacturing apparatus that performs processing by a chemical mechanical polishing method by performing a scanning operation on the entire surface of a wafer with a pad smaller than the wafer by the relative movement of the wafer and the pad. At
A processing control means is provided to correct and calculate the required polishing amount at each point of the wafer from the film thickness distribution before processing on the wafer, and process the wafer with the pad according to the calculated corrected polishing amount. A semiconductor manufacturing apparatus that can perform appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing, and can perform accurate processing by the chemical mechanical polishing method while improving and absorbing the film thickness variation of the wafer in the previous process. Can be provided.

According to the second aspect of the invention, in the first aspect of the invention, the wafer is processed by using the pad having the concave pad shape. Therefore, the processing is performed only at a portion having the same contact pressure between the pad and the wafer. Therefore, it is possible to provide a semiconductor manufacturing apparatus capable of performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

According to the third invention, in the first invention, since the wafer is processed by the pad having the convex pad shape, the polishing amount of the wafer can be made equal over the entire surface of the pad. It is possible to provide a semiconductor manufacturing apparatus capable of performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

According to a fourth aspect of the present invention, in the first to third aspects, a plurality of pads are provided, and the wafer is processed by performing a scanning operation on the entire surface of the wafer with the plurality of pads. It is possible to provide a semiconductor manufacturing apparatus that can perform appropriate processing by the chemical mechanical polishing method according to the previous film thickness distribution and can perform efficient processing.

According to the fifth invention, in the first to fourth inventions, the wafer itself is also rotated so as to move its processing surface, so that it is appropriate by the chemical mechanical polishing method according to the film thickness distribution before processing. It is possible to provide a semiconductor manufacturing apparatus that can perform various types of processing and can perform more efficient processing.

According to the sixth aspect of the present invention, by performing a scanning operation on the entire surface of the wafer with a pad smaller than the wafer, the film thickness distribution on the wafer is detected during the processing by the chemical mechanical polishing method, and the detected film is detected. The required polishing amount at each point of the wafer was corrected and calculated from the thickness distribution, and the wafer was processed by the pad according to the calculated corrected polishing amount. It is possible to provide a semiconductor manufacturing method capable of performing appropriate processing by the chemical mechanical polishing method, improving and absorbing the film thickness variation of the wafer in the previous process, and performing accurate processing by the chemical mechanical polishing method.

According to the seventh invention, in the sixth invention, since the wafer is processed by the pad having the concave pad shape, the processing is carried out only at a portion having the same contact pressure between the pad and the wafer. It is possible to provide a semiconductor manufacturing method capable of performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

According to the eighth invention, in the sixth invention, since the wafer having the convex pad shape is used to process the wafer, the entire surface of the pad can be processed in the same polishing amount. It is possible to provide a semiconductor manufacturing method capable of performing appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing.

According to a ninth invention, in the sixth to eighth inventions, the material, hardness, and
Since pads with different sizes are used to sequentially process by the chemical mechanical polishing method, it is possible to perform appropriate processing by the chemical mechanical polishing method according to the film thickness distribution before processing, and by the pad according to the processing stage. It is possible to provide a semiconductor manufacturing method capable of performing accurate processing adapted to the processing stage.

According to the tenth invention, in the sixth to ninth inventions, the scanning operation is performed on the entire surface of the wafer by the plurality of pads, so that the chemical mechanical polishing is performed according to the film thickness distribution before processing. It is possible to provide a semiconductor manufacturing method capable of performing appropriate processing by the method and performing efficient processing.

According to the eleventh invention, the sixth to tenth aspects are provided.
In the invention, since the wafer itself is also rotated so as to move the processing surface, a semiconductor manufacturing method capable of performing appropriate processing by a chemical mechanical polishing method according to the film thickness distribution before processing and further efficient processing. Can be provided.

[Brief description of drawings]

FIG. 1 is a plan view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a side view showing the configuration of the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a side view showing a configuration of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a plan view showing a configuration of a semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a plan view showing a structure of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 6 is a plan view showing a configuration of a semiconductor device according to a conventional technique.

[Explanation of symbols]

1 pad, 2 wafers, 3 pads, 4 pad receivers, 5 processing control section, 6 processing condition setting section, 7 pad support heads.

Claims (11)

[Claims] 1. A semiconductor manufacturing apparatus that performs a chemical mechanical polishing process by performing a scanning operation by a relative movement of the wafer and the pad on the entire surface of a wafer with a pad smaller than the wafer, and a film before processing on the wafer. Semiconductor manufacturing, characterized in that processing control means is provided for correcting and calculating a required polishing amount at each point of the wafer from the thickness distribution, and processing the wafer with the pad according to the calculated corrected polishing amount. apparatus. 2. The semiconductor manufacturing apparatus according to claim 1, wherein a wafer having a concave pad shape is used to process a wafer. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the wafer is processed by a pad having a convex pad shape. 4. The semiconductor manufacturing apparatus according to claim 1, wherein a plurality of pads are provided, and a scanning operation is performed on the entire surface of the wafer by the plurality of pads to process the wafer. . 5. The wafer itself is also rotated so as to move the processing surface of the wafer itself.
The semiconductor manufacturing apparatus according to any one of 1. 6. A film size distribution on the wafer is detected when performing a process by a chemical mechanical polishing method by performing a scanning operation on the entire surface of the wafer with a pad smaller than the wafer, and based on the detected film thickness distribution, each wafer is detected. A semiconductor manufacturing method characterized in that a necessary polishing amount at a point is corrected and calculated, and a wafer is processed by the pad according to the calculated corrected polishing amount. 7. The semiconductor manufacturing method according to claim 6, wherein the wafer is processed by using a pad having a concave pad shape. 8. The semiconductor manufacturing method according to claim 6, wherein the wafer is processed with a pad having a convex pad shape. 9. The method according to claim 6, wherein the same polishing station is used to sequentially perform processing by pads having different materials, hardnesses, and sizes by a chemical mechanical polishing method. Semiconductor manufacturing method. 10. The semiconductor manufacturing method according to claim 6, wherein a scanning operation is performed on the entire surface of the wafer with a plurality of pads. 11. The semiconductor manufacturing method according to claim 6, wherein the wafer itself is also rotated so as to move its processing surface.