JP4801406B2 - 液晶表示装置の作製方法 - Google Patents

液晶表示装置の作製方法 Download PDF

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Publication number
JP4801406B2
JP4801406B2 JP2005285796A JP2005285796A JP4801406B2 JP 4801406 B2 JP4801406 B2 JP 4801406B2 JP 2005285796 A JP2005285796 A JP 2005285796A JP 2005285796 A JP2005285796 A JP 2005285796A JP 4801406 B2 JP4801406 B2 JP 4801406B2
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Prior art keywords
insulating film
forming
gate
electrode
film
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JP2005285796A
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Japanese (ja)
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JP2006128665A (ja
JP2006128665A5 (enExample
Inventor
舜平 山崎
博信 小路
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005285796A priority Critical patent/JP4801406B2/ja
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Publication of JP2006128665A5 publication Critical patent/JP2006128665A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005285796A 2004-09-30 2005-09-30 液晶表示装置の作製方法 Expired - Fee Related JP4801406B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005285796A JP4801406B2 (ja) 2004-09-30 2005-09-30 液晶表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004287879 2004-09-30
JP2004287879 2004-09-30
JP2005285796A JP4801406B2 (ja) 2004-09-30 2005-09-30 液晶表示装置の作製方法

Publications (3)

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JP2006128665A JP2006128665A (ja) 2006-05-18
JP2006128665A5 JP2006128665A5 (enExample) 2007-11-08
JP4801406B2 true JP4801406B2 (ja) 2011-10-26

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JP2005285796A Expired - Fee Related JP4801406B2 (ja) 2004-09-30 2005-09-30 液晶表示装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007139209A1 (en) 2006-05-31 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP5148170B2 (ja) * 2006-05-31 2013-02-20 株式会社半導体エネルギー研究所 表示装置
WO2007139210A1 (en) 2006-05-31 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5172178B2 (ja) * 2007-03-15 2013-03-27 三菱電機株式会社 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法
JP5104057B2 (ja) * 2007-06-21 2012-12-19 セイコーエプソン株式会社 半導体装置の製造方法
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
TWI476921B (zh) * 2008-07-31 2015-03-11 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101579050B1 (ko) * 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
CN105513644B (zh) * 2009-09-24 2019-10-15 株式会社半导体能源研究所 驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4101340B2 (ja) * 1997-12-12 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000353666A (ja) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4741192B2 (ja) * 2003-01-17 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP2006128665A (ja) 2006-05-18

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