JP4801242B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4801242B2
JP4801242B2 JP2000232507A JP2000232507A JP4801242B2 JP 4801242 B2 JP4801242 B2 JP 4801242B2 JP 2000232507 A JP2000232507 A JP 2000232507A JP 2000232507 A JP2000232507 A JP 2000232507A JP 4801242 B2 JP4801242 B2 JP 4801242B2
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semiconductor layer
island
shaped semiconductor
region
tft
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Japanese (ja)
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JP2002050761A5 (enExample
JP2002050761A (ja
Inventor
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000232507A 2000-07-31 2000-07-31 半導体装置の作製方法 Expired - Fee Related JP4801242B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000232507A JP4801242B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000232507A JP4801242B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

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JP2002050761A JP2002050761A (ja) 2002-02-15
JP2002050761A5 JP2002050761A5 (enExample) 2007-09-20
JP4801242B2 true JP4801242B2 (ja) 2011-10-26

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JP2000232507A Expired - Fee Related JP4801242B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014021356A1 (en) * 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI575663B (zh) 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
KR102691397B1 (ko) 2012-09-13 2024-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
WO2014103900A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112014006046T5 (de) * 2013-12-27 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3137839B2 (ja) * 1994-07-30 2001-02-26 株式会社半導体エネルギー研究所 アクティブマトリクス回路
JPH1195256A (ja) * 1997-09-25 1999-04-09 Sharp Corp アクティブマトリクス基板

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