JP4789580B2 - ANTENNA, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE HAVING THE ANTENNA, AND ITS MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to an antenna structure and a method for manufacturing the antenna. The present invention also relates to a semiconductor device including the antenna and a manufacturing method thereof.

  In recent years, IDs (individual identification numbers) are given to individual objects, and information is exchanged in a non-contact manner using a semiconductor device equipped with an antenna, thereby clarifying the history of the objects for production, management, etc. Solid-state recognition technology that is useful is attracting attention. As such a semiconductor device, a wireless chip (also referred to as an ID tag, an IC tag, an IC chip, an RF tag (Radio Frequency), a wireless tag, an electronic tag, or an RFID tag (Radio Frequency Identification)) or the like is used in the company, the market, or the like. Etc. are beginning to be introduced on a trial basis.

For example, there is an increasing need for wireless chip mounted cards and wireless chip mounted tags that can exchange data without contact in all fields that require automatic recognition, such as management of securities and products. A card on which a wireless chip is mounted reads and writes data with an external device via a loop antenna inside the card. A card equipped with a wireless chip has a larger storage capacity and better security than a magnetic card that records data by a magnetic recording method, and recently, a form that can be used in various fields has been proposed. (For example, Patent Document 1) Further, when a wireless chip is mounted on a securities or the like, it is required to reduce the thickness of the wireless chip.
JP 2001-260580 A

  An object of the present invention is to provide an antenna with improved adhesion strength of a conductor formed on a base film (also called a film or a substrate) and a semiconductor device including the antenna. Another object is to provide a highly reliable semiconductor device in which the element formation layer is not damaged due to the structure of the antenna even when the element formation layer and the antenna are attached to provide a semiconductor device. . Another object is to provide a method for manufacturing the antenna and a method for manufacturing a semiconductor device including the antenna.

  In order to solve the above problems, the present invention takes the following measures.

  The semiconductor device of the present invention includes an element formation layer provided on a substrate and an antenna provided on the element formation layer. The antenna includes a film and a conductor, and the element formation layer and the conductive layer are provided. The body is electrically connected, and at least a part of the conductor is embedded in the film.

  Further, as another configuration of the semiconductor device of the present invention, it has an element formation layer provided on a substrate and an antenna provided on the element formation layer, and the antenna has a film and a conductor, The element formation layer and the conductor are electrically connected, and the film has a recess on the surface, and the conductor is provided in the recess. The conductor does not need to be entirely embedded in the recess of the base film, and it is sufficient that at least a part of the conductor is embedded in the recess of the base film. In addition, the concave part here refers to the dent, and having a concave part on the surface of the film means that the film is partially concaved on the surface.

  In addition, another structure of the semiconductor device of the present invention includes an element formation layer provided over a substrate and an antenna provided over the element formation layer. The antenna includes a film and a conductor. The element formation layer and the conductor are electrically connected, the film has a recess on the surface, the conductor is provided on the surface and the recess of the film, and the conductor provided on the surface of the film and the recess is electrically It is characterized by being connected.

  In the structure of the semiconductor device, the element formation layer and the antenna can be electrically connected to each other through a connection terminal. A flexible substrate can be used as the substrate over which the element formation layer is formed.

  The antenna of the present invention has a film and a conductor, the film has a concave portion on the surface, the conductor is provided on the surface and the concave portion of the film, and the conductor provided on the surface and the concave portion of the film includes It is characterized by electrical connection. In addition, the conductor does not need to be completely embedded in the recess of the base film, and it is sufficient that at least a part of the conductor is embedded in the recess of the base film.

  The method for manufacturing an antenna of the present invention is characterized in that a recess is formed in a film and a conductor is formed in the recess of the film.

  Another method for manufacturing the antenna of the present invention is to form a recess in a film, and provide a conductor sheet bonded to the surface and the recess of the film, leaving the conductor sheet provided in the recess of the film. It is characterized by selectively etching a sheet. The term “conductor sheet” as used herein refers to a conductor film, a film-like metal plate, or a sheet obtained by extending a conductor thinly, and includes, for example, a metal foil.

  As another method for manufacturing the antenna of the present invention, a concave portion is formed in a film, and a conductive composition is selectively discharged to form a conductor in the concave portion of the film. That is, the conductor is directly formed in the concave portion of the film. As a method for directly forming the conductor, a droplet discharge method, a printing method such as screen printing, an atmospheric pressure plasma apparatus, or the like can be used. Note that the droplet discharge method is a method in which droplets (also referred to as dots) of a composition containing a material such as a conductive film or an insulating film are selectively discharged (jetted) to be formed at an arbitrary place. Depending on the method, it is also called an inkjet method.

  In the present invention, the concave portion of the film can be formed by pressing a mold on the film. In addition, the recess may be directly formed on the film by irradiating with laser light.

  As another method for manufacturing the antenna of the present invention, a conductor sheet is bonded to a film, a mold is pressed on the film and the conductor sheet to form a recess, and a conductor sheet provided in the recess of the film is left. Thus, the conductive sheet is selectively etched. Moreover, you may peel off selectively another conductor sheet using a physical means (physical force) so that the conductor sheet provided in the recessed part of the film may be left without performing an etching process. The physical means is a means recognized not by chemistry but by physics. Specifically, it means a mechanical means or a mechanical means having a process that can be applied to the laws of mechanics. It refers to a means of changing energy (mechanical energy). In other words, peeling using physical means means applying an impact (stress) from the outside using, for example, a human hand, a wind pressure of a gas blown from a nozzle, a load using an ultrasonic wave or a wedge-shaped member, or the like. Say to peel.

  As another method for manufacturing the antenna of the present invention, a conductor sheet is bonded to a film, the conductor sheet is selectively cut, and the cut conductor sheet and a film positioned below the conductor sheet are molded. Is formed by selectively etching the conductive sheet so as to leave the conductive sheet provided in the concave portion of the film. Moreover, you may peel off selectively another conductor sheet using a physical means so that the conductor sheet provided in the recessed part of the film may be left without performing an etching process.

  In the above configuration, when the concave portion is formed by pressing the mold on the film, the heating may be performed.

  In addition, a semiconductor device can be manufactured by electrically connecting an antenna formed using the above method for manufacturing an antenna and an element formation layer provided over a substrate. In addition, the element formation layer and the antenna can be connected through a connection terminal.

  According to the present invention, an antenna having a high adhesive strength of a conductor to a base film and a semiconductor device including the antenna can be obtained, so that the conductor can be prevented from peeling from the base film. In addition, by burying the conductor in the base film, damage to the adherend due to the structure of the antenna can be reduced when the antenna is bonded to the adherend.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings, and repetitive description may be omitted.

  An object of the present invention is to provide a highly reliable semiconductor device in which an element formation layer is not damaged due to the structure of an antenna even when an element formation layer and an antenna are attached to provide a semiconductor device. . For example, a case where a semiconductor device is manufactured by attaching an antenna 751 and an element formation layer 752 (also referred to as an IC chip) separately formed as illustrated in FIG. In this case, for example, when the structure of the antenna is provided with a conductor 754 attached to the base film 753 as shown in FIG. 15B, the base film and the conductor are made smaller as the antenna becomes smaller. There is a problem that the close contact portion 755 becomes small and the conductor 754 is easily peeled off from the base film 753. In addition, when the antenna 751 and the element formation layer 752 are bonded so as to overlap with each other in order to reduce the size of the semiconductor device, element formation located below the convex pattern of the antenna 751 (the portion where the conductor 754 is provided) is formed. There is local pressure on the layer. Therefore, as shown in FIG. 15C, the element formation layer provided below the convex pattern of the antenna is deformed or cracked, resulting in damage to the element formation layer. There are concerns about problems such as reduced reliability.

  Therefore, in the present invention, in the antenna including the base film 702 and the conductor 703, the surface of the antenna is flattened by embedding the conductor 703 in the base film 702 (see FIG. 8A). Then, the planarized antenna surface and the element formation layer 701 provided over the substrate 700 are attached to form a semiconductor device without damaging the element formation layer (see FIG. 8B).

  Note that in the present invention, the element formation layer uses a thin film transistor (TFT) on a substrate or a field effect transistor (FET) provided with a channel region on a semiconductor substrate such as Si, and the like. Various functional circuits such as means and a resonant capacitor are provided.

  In this manner, a highly reliable semiconductor device can be obtained by attaching an antenna without applying a load to the element formation layer. In the present invention, the antenna may have any shape. Hereinafter, the structure of the antenna and the manufacturing method thereof or the semiconductor device and the manufacturing method thereof will be described in detail with reference to the drawings.

(Embodiment 1)
In this embodiment, one embodiment of an antenna and a method for manufacturing the antenna will be described. Specifically, an antenna having a structure in which at least part of a conductor is embedded in a base film (also referred to as a film or a substrate) is formed. Hereinafter, the structure and manufacturing method of the antenna will be described with reference to the drawings.

  First, a base film 100 and a mold 101 used for forming a pattern on the surface of the base film 100 are prepared (FIG. 1A). As the base film 100, a thermoplastic resin such as a polyester type such as polyethylene terephthalate, a polyolefin type such as polyethylene, a polyvinyl alcohol type, a polyvinylidene chloride type, a polyvinyl chloride type, a nylon 6, nylon 66, or a nylon 8 polyamide type is used. The used film-like substrate can be used. In addition, a substrate obtained by coating the thermoplastic resin on a substrate made of thin glass or the like may be used. On the other hand, as the mold 101, a metal mold made of a metal such as nickel (Ni), cobalt (Co), copper (Cu), iron (Fe), zinc (Zn), or an alloy thereof, or silicon (Si) is used. A die or the like processed from can be used.

  Next, the mold 101 is pressed against the base film 100 (FIG. 1B), and the recesses 102 are selectively formed in the base film 100 (FIG. 1C). In this case, it is preferable to perform the heat treatment together with the pressure treatment because a pattern can be easily formed. Moreover, what kind of thing may be sufficient as the shape of a recessed part, Here, the example formed in a rectangular shape is shown as an example.

  Subsequently, the conductor sheet 103 is pressed onto the base film 100 in which the recesses 102 are formed (FIG. 1D), and is bonded to the surface of the base film 100 (FIG. 1E). In this case, the heat treatment may be performed together with the pressure treatment. As the conductor sheet, for example, a paper (for example, metal foil) obtained by thinly extending a metal such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au) can be used. .

  After that, the conductive sheet is selectively etched by leaving the conductive sheet bonded to the portion of the base film where the concave portion 102 is formed in the conductive sheet 103 bonded to the surface of the base film 100. Thus, an antenna in which the conductor 104 is embedded in the base film 100 is completed (FIG. 1F). In such an antenna, the area where the base film 100 and the conductor 104 are bonded is large and the conductor is embedded in the base film, so that the conductor 104 is difficult to peel off.

  Further, in the structure of the antenna shown in FIG. 1, the antenna is arranged such that the surface of the base film 100 (hereinafter referred to as the base film outermost surface) in which no recess is formed and the outermost surface of the conductor 104 are arranged at the same position. However, the present embodiment is not limited to such a structure. For example, a structure in which the position of the outermost surface of the base film and the outermost surface of the conductor 104 may be different, or a structure in which a conductor is formed on the outermost surface of the base film may be used. Specific examples of these are shown in FIG.

  The structure of the antenna illustrated in FIG. 2A has a structure in which the outermost surface of the conductor 104 is higher than the outermost surface of the base film, that is, a portion 105 where the conductor 104 protrudes from the base film 100. The structure shown in FIG. 2B has a structure in which the outermost surface of the conductor 104 is lower than the outermost surface of the base film, that is, a portion 106 in which the conductor is retracted from the outermost surface of the base film. In the structure shown in FIG. 2C, the conductor is higher than the outermost surface of the base film and has a portion 107 on which the conductor is formed on the outermost surface of the base film. These structures can be selectively formed by controlling the location and time of etching when the conductor sheet 103 in FIG. 1E is etched.

  The antenna structure shown in FIGS. 2A and 2C has a larger exposed portion of the conductor than the antenna structure shown in FIG. 1, so that the antenna and the object to be connected are made of a conductive adhesive or the like. Since the connection area is large when connecting with, it has the advantage that it is easy to connect. 2A and 2C, the conductor can have a wide cross-sectional area. As a result, the conduction resistance can be kept low, so that the communication distance of the semiconductor device can be increased. In addition, the structure of the antenna illustrated in FIG. 2B has an advantage that the conductor is less likely to be peeled than the structure of the antenna illustrated in FIG. The practitioner may select an appropriate antenna structure according to the use of the antenna.

  In addition, in the base film shown in FIGS. 1 and 2, the case where the rectangular cross section has a recess is shown. However, the present embodiment is not limited to this structure, and any structure in which a conductor is embedded can be used. Such a recess may be provided in the base film. For example, as shown in FIG. 3, a tapered cross-sectional structure in which the upper side of the cross section of the recess is longer than the lower side (FIG. 3A), and vice versa (the lower side is longer than the upper side). A taper-shaped cross-sectional structure (FIG. 3B) or a step-shaped cross-sectional structure (FIG. 3C) may be formed.

  In the present embodiment, since the shape of the concave portion formed in the base film 100 depends on the shape of the convex portion of the mold 101, a shape other than the rectangle described above can be easily formed by changing the shape of the mold 101. It is possible. Further, the structure shown in FIG. 3 can be freely combined with the structures shown in FIGS.

  As described above, by using the method for manufacturing an antenna described in this embodiment, an antenna with a flat surface and a conductor that is not easily peeled off from a base film can be obtained. In addition, by using an antenna with a flat surface, there is no local pressure on the adherend when it is bonded to the adherend, reducing damage to the adherend and improving yield in the manufacturing process. Can do. In addition, when a flexible semiconductor device with a small thickness is formed, warpage of the semiconductor device caused by stress can be prevented by providing the antenna. That is, in the structure of the antenna, the conductor may be formed with any thickness as long as it can be embedded in the base film.

(Embodiment 2)
In this embodiment, a method for manufacturing an antenna which is different from that in the above embodiment will be described with reference to drawings. Specifically, the case where the pressure treatment is performed after the conductor sheet is formed on the base film will be described.

  First, the conductor sheet 103 is bonded to the base film 100 (FIG. 4A). Alternatively, a film in which the conductor sheet 103 is provided in advance on the base film 100 is prepared. For the bonding, for example, an adhesive such as an epoxy resin can be used. Note that any of the materials described in the above embodiments can be used for the material of the base film 100 and the conductor sheet 103.

  Subsequently, the mold 101 is prepared (FIG. 4B). As the mold 101, the mold shown in the above embodiment can be used. Next, the mold 101 is pressed against the conductor sheet 103 formed on the base film 100 to selectively form the recesses 102 in the base film 100 and the conductor sheet 103 (FIG. 4C). In this case, it is preferable to perform the heat treatment together with the pressure treatment because a pattern can be easily formed. Moreover, what kind of thing may be sufficient as the cross-sectional shape of a recessed part, and the example formed in a rectangular shape is shown here as an example.

  After that, by selectively etching the conductor sheet 103 formed on the surface of the base film 100 (FIG. 4D), an antenna in which the conductor 104 is embedded in the base film 100 is completed ( FIG. 4 (E)). In addition, by controlling the location and time of etching at this time, any structure of the antenna shown in FIG. 2 can be formed. Furthermore, by changing the shape of the mold 101, an antenna having the structure shown in FIG. 3 can be formed. As described above, after the conductor sheet is formed on the base film in advance, the conductor sheet is embedded in the base film even when a method of pressing the conductor and the base film by pressure treatment is used. An antenna can be formed.

  Moreover, it shows in FIG. 5 regarding the form different from the said method.

  First, the conductor sheet 103 is bonded to the base film 100 (FIG. 5A). Alternatively, a film in which the conductor sheet 103 is provided in advance on the base film 100 is prepared.

  Subsequently, using the pressing means 120 (FIG. 5B), a part of the conductor sheet 103 provided on the base film 100 is selectively subjected to pressure treatment (hereinafter referred to as conductive). Body sheet 124) is pushed into the base film 100 (FIG. 5C). At this time, the pressure treatment is performed while performing the heat treatment. The pressing means 120 includes at least a pressing part 121 and blade parts 122 and 123 provided at both ends of the pressing part 121. By using the pressing means 120, the conductor sheet 103 is first cut by the blade parts 122 and 123, and then the conductor sheet 124 from which the press part 121 has been cut is pushed. Through the above steps, a structure in which only the conductor sheet 124 is embedded in the base film 100 is obtained.

  After that, the conductive sheet 103 is selectively etched (FIG. 5D), and unnecessary portions are removed, whereby the antenna in which the conductive material 125 is embedded in the base film 100 is completed (FIG. 5E). )).

  5 can also be formed by changing the position of the outermost surface of the base film and the outermost surface of the conductor 125 as shown in FIG. For example, in order to obtain a structure in which the conductor 125 protrudes from the outermost surface of the base film (FIG. 2A), the pressure in the pressurizing process of the press unit 120 may be reduced. In order to obtain a structure in which the conductor 125 is embedded in the base film (FIG. 2B), the pressure in the pressurizing process of the press means 120 may be increased. In order for the conductor 125 to have a structure in which the conductor is higher than the outermost surface of the base film and is also formed on the outermost surface of the base film (FIG. 2C), the pressure in the pressurizing process of the pressing means 120 is reduced and etching In this case, etching may be selectively performed so as to leave the conductor on the base film. Further, by changing the shape of the press portion, the conductor having the concave portion shown in FIG. 3 can be provided on the base film.

  4 and 5 show an example in which the conductive sheet other than the conductive sheet provided in the recess is selectively removed by performing the etching process, but the present embodiment is not limited thereto. Absent. Instead of performing the etching treatment, other conductor sheets may be selectively peeled off using physical means so as to leave the conductor sheet provided in the concave portion of the base film. This is particularly effective when the conductor sheet embedded in the concave portion of the base film is cut from other conductor sheets (for example, FIG. 5D).

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 3)
In this embodiment, an antenna manufacturing method which is different from that in the above embodiment will be described. Specifically, a method for forming a recess in the base film and a method for forming a conductor on the base film in which the recess is formed will be described below.

  First, a manufacturing method different from the above embodiment of the concave portion of the base film will be described.

  In the above embodiment, a method of forming a recess in the base film by pressing a mold against the base film (FIGS. 1A to 1C) is shown. Here, the base film is irradiated with laser light. The case where the concave portion is directly formed will be described below with reference to FIG.

  First, the base film 300 is prepared. Next, by using a laser direct drawing apparatus 1001, the base film 300 is selectively irradiated with laser light to form a recess 301 (FIG. 6A).

  A laser direct drawing apparatus 1001 includes a computer (hereinafter referred to as a PC) 1002 that executes various controls when irradiating laser light, a laser oscillator 1003 that outputs laser light, a power source 1004 of the laser oscillator 1003, and a laser. An optical system (ND filter) 1005 for attenuating light, an acousto-optic modulator (AOM) 1006 for modulating the intensity of the laser light, a lens for reducing the cross section of the laser light, and An optical system 1007 configured with a mirror or the like for changing the optical path, a moving mechanism 1009 having an X-axis stage and a Y-axis stage, and a D / A converter 1010 for digital-analog conversion of control data output from the PC , Acousto-optic modulator according to analog voltage output from D / A converter A driver 1011 for controlling 006, a driver 1012 for outputting a driving signal for driving the moving mechanism 1009, and an autofocus mechanism 1013 for focusing the laser beam on the irradiated object (see FIG. 6). B)).

As the laser oscillator 1003, a laser oscillator that can oscillate ultraviolet light, visible light, or infrared light can be used. Examples of laser oscillators include excimer laser oscillators such as KrF, ArF, XeCl, and XeF, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, and YAlO _3. A solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the fundamental wave or the second to fifth harmonics.

  Next, an irradiation method using a laser direct drawing apparatus will be described. When the base film 300 is attached to the moving mechanism 1009, the PC 1002 detects the position of the marker attached to the base film by a camera (not shown). Next, the PC 1002 generates movement data for moving the movement mechanism 1009 based on the detected marker position data and drawing pattern data input in advance.

  Thereafter, the PC 1002 controls the output light amount of the acousto-optic modulator 1006 via the driver 1011, so that the laser light output from the laser oscillator 1003 is attenuated by the optical system 1005 and then the acousto-optic modulator 1006. The light amount is controlled so as to be a predetermined light amount. On the other hand, the laser light output from the acousto-optic modulator 1006 is changed in optical path and beam spot shape by the optical system 1007, condensed by a lens, and then irradiated on the base film.

  At this time, according to the movement data generated by the PC 1002, the movement mechanism 1009 is controlled to move in the X direction and the Y direction. As a result, a predetermined place is irradiated with laser light, the light energy density of the laser light is converted into thermal energy, and a pattern can be selectively formed on the base film. Thus, a pattern can be formed on the base film also by using a method of irradiating the base film with laser light. Note that, here, an example in which the moving mechanism 1009 is moved and laser light irradiation is performed is shown; however, the laser light may be moved in the X direction and the Y direction by adjusting the optical system 1007.

  In this way, it is possible to form a pattern on the base film by irradiating the laser beam. In the case of using laser light, it is only necessary to input data to the computer as to what shape pattern is formed, so that a plurality of patterns can be easily formed.

  Next, regarding a method for forming a conductor on a base film provided with a pattern, a manufacturing method different from the above embodiment mode will be described with reference to FIGS.

  First, a base film 400 on which a pattern is formed is prepared. The pattern formed on the base film may be formed by pressing a mold against the base film as described above, or may be formed by direct drawing by irradiating a laser beam or the like. Subsequently, the conductor 401 is formed on the pattern portion formed on the base film. In this embodiment mode, the conductor 401 is formed by selectively providing a conductive material in the pattern portion. Here, an example in which the conductor 401 is formed by a droplet discharge method is shown (FIGS. 7A and 7B). Note that the droplet discharge method is a method in which droplets (also referred to as dots) of a composition containing a material such as a conductive film or an insulating film are selectively discharged (jetted) to be formed at an arbitrary place. Depending on the method, it is also called an inkjet method.

  As a conductor formed by a droplet discharge method, a conductive material including one or more metals such as Ag, Au, Cu, and Pd and a metal compound is used. Note that a conductive material having one or more metals, such as Cr, Mo, Ti, Ta, W, and Al, or a metal compound, can be used as long as aggregation can be suppressed by a dispersant. is there. In addition, a structure in which a plurality of conductive films are stacked can be formed by performing film formation of a conductive material a plurality of times by a droplet discharge method. However, the composition discharged from the droplet discharge device 402 is preferably used by dissolving or dispersing any material of Au, Ag, and Cu in a solvent in consideration of the specific resistance value. More preferably, low resistance Ag or Cu is used. However, when Ag or Cu is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

  Note that in this embodiment mode, a recess pattern is provided in the base film 400 in advance, and a conductive material may be formed by discharging a conductive material into the recess pattern. Therefore, it is possible to prevent the conductive material from spreading when the conductive material discharged from the droplet discharge device 402 lands on the base film. Therefore, the conductor 401 can be accurately formed on the pattern portion of the base film 400 by using the droplet discharge method. In addition, since the conductor can be directly formed on the pattern of the base film, there is an advantage that an etching process is not necessary.

  Although FIG. 7 shows an example in which the conductor 401 is formed by a droplet discharge method, the present invention is not limited to this, and the conductor is selectively used by using various printing methods such as a screen printing method and a gravure printing method and an atmospheric pressure plasma apparatus. May be formed.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 4)
In this embodiment, the case where a semiconductor device is formed by connecting the antenna described in the above embodiment and an element formation layer will be described with reference to FIGS.

  First, a separately formed element formation layer and an antenna are prepared (FIG. 8A). Here, the element formation layer 701 is provided over the substrate 700, and the antenna is provided with a conductor 703 embedded in a base film 702. As the substrate 700, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a flexible substrate such as a quartz substrate, a ceramic substrate, or plastic is used, and an element formation layer 701 is provided thereon. Alternatively, the element formation layer 701 may be formed directly on the substrate 700 using a semiconductor substrate such as Si.

  Next, the element formation layer 701 and the antenna are connected (FIG. 8B). As for the connection between the element formation layer 701 and the antenna, a method using a conductive adhesive such as a silver paste, a copper paste, a carbon paste, an anisotropic conductive film, or a method of performing solder bonding is known. May be used. Here, a case where an anisotropic conductive film 705 including a conductor 704 is used is shown. At this time, a connection terminal 706 may be provided in order to easily connect the conductor 703 and the element formation layer 701 electrically.

  In the antenna used in this embodiment, since the conductor 703 is embedded in the base film 702, the conductor can be prevented from peeling from the base film when the element formation layer and the antenna are joined. Further, in the conventional antenna structure, the portion where the conductor is formed has a convex portion, so that the element forming layer located under the conductor is locally subjected to pressure, and the element forming layer is damaged. However, these problems can be prevented by using the antenna structure shown in this embodiment mode. In this manner, a highly reliable semiconductor device can be obtained by attaching the antenna to the element formation layer without applying a load.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 5)
In this embodiment, a method for manufacturing a semiconductor device including an antenna will be described.

  Here, as an example, a case where a plurality of semiconductor devices are formed over the substrate 800 will be described with reference to FIGS. 9A is a top view, FIG. 9B is a cross-sectional view taken along line ab in FIG. 9A, and FIG. 9C is a cross-sectional view taken along line cd in FIG. 9A. Each figure is shown.

  First, as illustrated in FIGS. 9B and 9C, a separation layer 801 and an element formation layer 802 are formed over a substrate 800.

  As the substrate 800, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a metal substrate containing stainless steel or a semiconductor substrate with an insulating film formed on the surface thereof may be used. A substrate made of a synthetic resin having flexibility such as plastic generally tends to have a lower heat resistant temperature than the above substrate, but can be used as long as it can withstand the processing temperature in the manufacturing process. . Further, a semiconductor substrate such as Si may be used. The surface of the substrate 800 may be planarized by polishing such as a CMP method. Note that a glass substrate is used as the substrate 800 in this embodiment.

  The peeling layer 801 is mainly composed of an element selected from W, Ti, Ta, Mo, Nb, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, and Si, or the aforementioned element. A single layer made of an alloy material or a compound material, or a laminate of these can be used. In this embodiment, a metal film containing W is used as the separation layer 801. Note that a metal film containing W can be formed by a CVD method, a sputtering method, an electron beam, or the like, and here, it is formed by a sputtering method. Alternatively, a film in which an oxide is formed over the metal film may be used as the peeling layer 801. The oxide may be formed on the metal film by a CVD method or a sputtering method, or a method of forming an oxide on the metal film by performing heat treatment or the like can be used. For example, as the metal film and the metal oxide film, W and WOx, Mo and MoOx, Nb and NbOx, Ti and TiOx (x = 2 to 3), or the like can be used.

  Here, the peeling layer 801 is formed directly on the substrate 800, but a base film may be formed between the substrate 800 and the peeling layer 801. The base film is a single insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like. A layer structure or a stacked structure thereof can be used. In particular, when there is a concern about contamination from the substrate, it is preferable to form a base film.

  The element formation layer 802 is formed using a thin film transistor (also referred to as a TFT) having a semiconductor film as an active region. The element formation layer 802 is provided over the insulating film, the semiconductor film 806 formed in a desired shape, an insulating film functioning as a gate insulating film (hereinafter referred to as a gate insulating film 807), and the gate insulating film 807. And an n-channel TFT 820 or a p-channel TFT 821 having a conductive film functioning as a gate electrode (hereinafter referred to as a gate electrode 808).

  The semiconductor film includes a channel formation region and an impurity region (including a source region, a drain region, and an LDD region), and can be distinguished from the n-channel TFT 820 or the p-channel TFT 821 depending on the impurity element added. Then, a wiring 810 provided over the interlayer insulating film 809 is connected to each impurity region.

  The insulating film may have a stacked structure. In this embodiment, the insulating film includes a first insulating film 803, a second insulating film 804, and a third insulating film 805. For example, a silicon oxide film is used as the first insulating film, a silicon oxynitride film is used as the second insulating film, and a silicon oxide film is used as the third insulating film.

  The semiconductor film 806 includes an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed, a microcrystalline semiconductor in which crystal grains of 0.5 nm to 20 nm can be observed in the amorphous semiconductor, and It may have any state selected from crystalline semiconductors. If a substrate that can withstand the film formation temperature, for example, a quartz substrate is used, a crystalline semiconductor film may be formed on the substrate by a CVD method or the like.

  In this embodiment, an amorphous semiconductor film is formed and a crystalline semiconductor film crystallized by heat treatment is formed. The heat treatment can be performed using a heating furnace, laser irradiation, irradiation of light emitted from a lamp instead of laser light (lamp annealing), or a combination thereof.

In the case of using laser irradiation, a continuous wave laser (CW laser) or a pulsed laser (pulse laser) can be used. As lasers, Ar laser, Kr laser, excimer laser, YAG laser, Y ₂ O ₃ laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser Alternatively, one or a plurality of gold vapor lasers can be used. By irradiating the fundamental wave of such a laser and the second to fourth harmonics of the fundamental wave, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. In this case, a power density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

  As another heat treatment, when a heating furnace is used, the amorphous semiconductor film is heated at 500 to 550 ° C. for 2 to 20 hours. At this time, the temperature may be set in multiple stages in the range of 500 to 550 ° C. so that the temperature gradually increases. In the first low-temperature heating step, hydrogen or the like of the amorphous semiconductor film comes out, so that so-called hydrogen dipping that reduces film roughness during crystallization can be performed. Furthermore, it is preferable to form a metal element that promotes crystallization, such as Ni, on the amorphous semiconductor film because the heating temperature can be reduced. Even crystallization using such a metal element may be heated to 600 to 950 ° C.

  The gate insulating film 807 is formed so as to cover the semiconductor film 806. The gate insulating film 807 can be formed by stacking a single layer or a plurality of films using, for example, silicon oxide, silicon nitride, silicon nitride oxide, or the like.

  The gate electrode 808 is formed over the gate insulating film 807. The gate electrode 808 can be formed using, for example, an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used. Furthermore, the combination may be selected as appropriate. The gate electrode 808 may have a single-layer structure or a stacked structure including a plurality of layers. In this embodiment mode, the gate electrode 808 is formed using a stacked structure of tantalum nitride (TaN) and tungsten (W).

  Next, an impurity imparting n-type or p-type conductivity is selectively added to the semiconductor film 806 using a gate electrode 808 or a resist formed in a desired shape as a mask. It has a semiconductor film 806, a channel formation region, and an impurity region (including a source region, a drain region, and an LDD region), and can be distinguished from the n-channel TFT 820 or the p-channel TFT 821 depending on the conductivity type of the added impurity element. .

  In FIG. 9, an n-channel TFT 820 has a sidewall on the side wall of the gate electrode 808, and a source region, a drain region, and an LDD region in which an impurity imparting n-type conductivity is selectively added to the semiconductor film 806. Is formed. In the p-channel TFT 821, a source region and a drain region to which an impurity imparting p-type conductivity is selectively added are formed in the semiconductor film 806. Here, a structure is shown in which a sidewall is provided on the sidewall of the gate electrode 808 and an LDD region is selectively formed in the n-channel TFT 820. However, the present invention is not limited to this structure, and the p-channel TFT 821 also forms an LDD region. Alternatively, the p-channel TFT 821 may not be provided with a sidewall.

  Next, an interlayer insulating film 809 is formed. As the interlayer insulating film 809, an inorganic insulating film or an organic insulating film can be used. As the inorganic insulating film, a silicon oxide film, silicon oxynitride formed by a CVD method, a silicon oxide film applied by a SOG (Spin On Glass) method, or the like can be used. As an organic insulating film, polyimide, polyamide, or the like can be used. A film of BCB (benzocyclobutene), acrylic or positive photosensitive organic resin, negative photosensitive organic resin, or the like can be used. Alternatively, a stacked structure of an acrylic film and a silicon oxynitride film may be used.

  Alternatively, the interlayer insulating film 809 may be formed using a siloxane material such as a siloxane resin. A siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Alternatively, the interlayer insulating film 809 may be formed using a material including a polymer having an Si—N bond (polysilazane).

  By using the above material, an interlayer insulating film having sufficient insulation and flatness can be obtained even when the film thickness is reduced. In addition, since the above material has high heat resistance, an interlayer insulating film that can withstand reflow processing in a multilayer wiring can be obtained. Further, since the hygroscopic property is low, an interlayer insulating film with a small amount of dehydration can be formed.

  Next, the interlayer insulating film 809 is etched, a contact hole reaching the impurity region of the semiconductor film 806 is formed, and a wiring 810 electrically connected to the impurity region is formed. As the wiring 810, a single layer or a laminated structure made of one kind of element selected from Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, and Mn or an alloy containing a plurality of such elements is used. Can do. Here, it is preferable to form a metal film containing Al. In this embodiment, a stacked film of a Ti film and an alloy film containing Al and Ti is formed. Of course, not only a two-layer structure but also a single-layer structure or a laminated structure of three or more layers may be used. Further, the wiring material is not limited to the laminated film of Al and Ti. For example, an Al film or Cu film may be formed on the TaN film, and a laminated film in which a Ti film is further formed may be formed.

  Note that an insulating film 811 is preferably provided to cover the wiring 810. In the element formation layer 802, part of the wiring 810 is connected to the antenna later, but there is a concern that the wiring 810 may be contaminated or deteriorated by that process. Therefore, it is preferable to form an insulating film over the wiring 810. As the insulating film 811, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like A single layer structure or a stacked structure of these can be used.

  Thereafter, a groove 815 is formed between the element formation layers 802. The groove can be formed by dicing, scribing, etching using a mask, or the like. In the case of dicing, a blade dicing method using a dicing apparatus (dicer) is common. The blade is a grindstone in which diamond abrasive grains are embedded. The width of the blade is about 30 to 50 μm, and a groove is formed in the element formation layer 802 by rotating the blade at a high speed. In the case of scribing, there are a diamond scribing method and a laser scribing method. In the case of etching, a mask pattern can be formed by exposure and development processes, and a groove can be formed in the element formation layer 802 by dry etching, wet etching, or the like. In dry etching, an atmospheric pressure plasma method may be used. In this manner, a groove is formed between the element formation layers 802.

  The grooves are not necessarily formed between the element formation layers, and may be formed between a plurality of element formation layers. Alternatively, the element formation layer may be formed in a portion where the thin film transistor is not formed.

  Next, as shown in FIG. 10, an antenna substrate 830 including a conductor 830a and a base film 830b is bonded to the element formation layer 802. 10A is a top view of the antenna substrate 830 attached thereto, FIG. 10B is a cross-sectional view taken along line ab in FIG. 10A, and FIG. ) Are cross-sectional views taken along line cd.

  As a means for attaching the element formation layer 802 and the antenna substrate 830, there is an anisotropic conductor 832 in which the conductor 831 is dispersed. The anisotropic conductor 832 can be conductive in the region where the connection terminal 833 is provided in the element formation layer 802 because the conductor 831 is pressure-bonded depending on the thickness of each connection terminal 833. In other regions, since the conductor is kept at a sufficient interval, it does not conduct. In addition to the anisotropic conductor, bonding may be performed using a conductive adhesive, an ultraviolet curable resin, a double-sided tape, or the like.

  Further, the antenna substrate 830 is provided with a conductor 834 at a position corresponding to the element formation layer 802 and an opening 835 at a position corresponding to the groove 815. Note that the opening 835 may be provided between the conductors 834 or between a plurality of antennas. FIG. 10 shows the case where the opening 835 has a circular shape, but the present invention is not limited to this. For example, the opening may be formed to have a slit shape. Thus, the shape and arrangement of the groove 815 and the opening 835 can be set as appropriate.

  Next, an etchant is introduced into the opening 835 to remove the separation layer 801 (FIG. 11A). Here, the peeling layer 801 is removed by chemically reacting the peeling layer and the etching agent. Note that the peeling layer 801 may be completely removed, but here, the peeling layer 801 is not completely removed, and at least a part of the peeling layer located below the element formation layer 802 is left. By leaving even part of the separation layer 801, the element formation layer 802 can be prevented from being separated completely from the substrate 800 even after the separation layer 801 is removed.

As the etchant, a gas or a liquid containing halogen fluoride (interhalogen compound) that easily reacts with the peeling layer 801 is preferably used. For example, when a W film is used as the peeling layer 801, it is preferable to use chlorine trifluoride gas (ClF ₃ ) that reacts well with W. In addition, CF ₄ , SF ₆ , NF ₃ , F ₂ or the like may be used as the etching agent, and the practitioner may select as appropriate.

  Next, one surface of the antenna substrate 830 bonded to the element formation layer 802 is attached to the first sheet material 841, and the element formation layer 802 is peeled from the substrate 800 (FIG. 11B). Note that here, since the substrate 800 and the element formation layer 802 are connected to each other by a part of the separation layer 801, the element formation layer 802 is physically separated from the substrate 800.

  As the first sheet material 841, a substrate or a film having an adhesive layer on at least one side can be used. Here, a flexible film having an adhesive on one surface is used. Specifically, a film in which a pressure-sensitive adhesive containing an acrylic resin or the like is provided on a film made of polyester or the like is used.

  Next, the second sheet material 842 is bonded to the surface of the element formation layer 802 which is separated from the substrate 800, and the element formation layer 802 and the antenna substrate 830 are separated from the first sheet material (FIG. 11C )). Subsequently, the third sheet material 843 is bonded to the surface of the antenna substrate 830 peeled from the first sheet material, and the element formation layer 802 and the antenna substrate 830 are bonded to the second sheet material 842 and the third sheet material 842. Sealing is performed with a sheet material 843 (FIG. 11D).

  As the second sheet material 842 and the third sheet material 843, a laminate film can be used. Here, what formed the hot-melt film on films, such as polyester, can be utilized. In addition, when the second sheet material 842 or the third sheet material 843 is bonded to the element formation layer 802 and the antenna substrate 830, bonding is performed efficiently by performing one or both of pressure treatment and heat treatment. can do. In addition, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (xx) is previously added to the second and third sheet materials so that moisture or the like does not enter the element formation layer through the film after sealing. > Y), a silicon nitride oxide (SiNxOy) (x> y) film is preferably coated.

  In addition, as the second sheet material 842 and the third sheet material 843, films provided with an antistatic measure for preventing static electricity (hereinafter referred to as an antistatic film) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, a surfactant such as metal, indium and tin oxide (ITO), an amphoteric surfactant, a cationic surfactant or a nonionic surfactant is used. it can. In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Thereafter, the second sheet material 842 and the third sheet material 843 between the element formation layers 802 are selectively cut by dicing, scribing, or laser cutting. As a result, a sealed semiconductor device is completed.

  Note that in this embodiment, the first sheet material 841 uses a sheet material having a lower adhesive strength than the second sheet material 842 and the third sheet material 843. This is because if a sheet material having a strong adhesive force is used when the element formation layer 802 is peeled from the substrate 800, it is difficult to peel the substrate 800 when the sheet material adheres to the substrate 800. Therefore, in this embodiment mode, the separation process is performed twice in order to provide the element formation layer 802 over the flexible substrate.

  In addition, when the element formation layer 802 is formed over a glass substrate, the shape of the base substrate is not limited as compared with the case where the element formation layer 802 is formed from a silicon substrate. Therefore, productivity can be improved and mass production can be performed. In the above process, the peeled substrate can be reused, and cost reduction can be achieved. For example, a quartz substrate has advantages such as excellent flatness and high heat resistance, but has a problem of high cost. However, by reusing the substrate, cost reduction can be achieved even when a quartz substrate having a higher cost than the glass substrate is used.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 6)
In this embodiment, the case where peeling and sealing are performed on a semiconductor device provided over a substrate using a laminating apparatus will be described with reference to drawings. Here, as an example, a case where a semiconductor device provided over a rigid substrate such as glass is peeled from the substrate and then sealed with a flexible film is described. The schematic diagram will be described with reference to FIG. 12A illustrates a manufacturing process of a semiconductor device, and FIG. 12B illustrates a schematic view of a semiconductor device in each process.

  The laminating apparatus described in this embodiment mode includes a transport unit 870 that transports a substrate 800 provided with an element formation layer 802 and an antenna substrate 830, a first sheet material 861 having an adhesive layer on at least one surface, A second sheet material 862 and a third sheet material 863 that seal the element formation layer 802 and the antenna substrate 830 are provided. Further, a first peeling means 871 for peeling the element formation layer 802 and the antenna substrate 830 from the substrate 800, a second peeling means 872 for peeling the element formation layer 802 and the antenna substrate 830 from the first sheet material 861, and an element A structure such as a sealing unit 873 for sealing the formation layer 802 and the antenna substrate 830 is provided. Note that all these configurations may be provided, or some configurations may be combined. The overall flow will be described below.

  First, the element formation layer 802 provided on the substrate 800 is transported by the transport unit 870. The element formation layer 802 that has been conveyed flows in the direction of the first peeling means 871.

  Next, the first sheet material 861 is bonded to the surface of the antenna substrate 830 by the first peeling means 871 provided with a roller, and the element formation layer 802 and the antenna substrate 830 are peeled from the substrate 800. Thereafter, the peeled element forming layer 802 and the antenna substrate 830 are bonded to the first sheet material 861 and flow toward the second peeling means 872.

  Next, the second sheet material 862 is adhered to the surface of the element formation layer 802 by the second peeling means 872 provided with a roller, and the element formation layer 802 and the antenna substrate 830 are peeled from the first sheet material 861. To do. At this time, it is preferable to perform one or both of pressure treatment and heat treatment. Thereafter, the peeled element formation layer 802 and antenna substrate 830 are bonded to the second sheet material 862 and flow toward the sealing means 873.

  Subsequently, the third sheet material 863 is bonded to the surface of the antenna substrate 830 by the sealing unit 873, and the element formation layer 802 and the antenna substrate 830 are bonded to the second sheet material 862 and the third sheet material 863. Seal with. In the sealing unit 873, the surface of the antenna substrate 830 that has been transported by being bonded to the second sheet material 862 is adhered to the third sheet material 863 and sandwiched, and one of the pressure treatment and the heat treatment or Do both.

  The transport unit 870 transports the substrate 800 provided with the element formation layer 802, and may have any configuration as long as it can transport the substrate 800. For example, a belt conveyor, a plurality of rollers, a robot arm, or the like is used. Can do. The robot arm transports the substrate 800 as it is, or transports the stage on which the substrate 800 is provided.

  The first sheet material 861 is made of a flexible film, and a surface having an adhesive is provided on at least one surface. Specifically, an adhesive is provided on a base film used as a base material such as polyester. As the adhesive, a material made of a resin material containing an acrylic resin or the like or a synthetic rubber material can be used. The first sheet material 861 is preferably a film having a low adhesive strength (adhesive strength is preferably 0.01 N to 1.0 N, more preferably 0.05 N to 0.5 N). This is because the element forming portion is again bonded to the second sheet material after the element forming layer provided on the substrate is bonded to the first sheet material. The thickness of the adhesive can be 1 μm to 100 μm, preferably 1 μm to 30 μm. Moreover, as a base film, since it becomes easy to handle at the time of processing, it is preferable if it forms in 10 micrometers-1 mm using films, such as polyester.

  The second sheet material 862 and the third sheet material 863 are made of a flexible film and correspond to, for example, a laminate film or paper made of a fibrous material. Laminate film refers to all films that can be used for laminating treatment, and is made of materials such as polypropylene, polystyrene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, methyl methacrylate, nylon, polycarbonate, etc., and its surface is embossed, etc. The processing may be performed.

  Moreover, in this Embodiment, it is preferable to seal an element formation layer using a hot-melt-adhesive. A hot-melt adhesive is a chemical substance that does not contain water or a solvent, is made of a solid and non-volatile thermoplastic material at room temperature, and adheres to an object by being applied and cooled in a molten state. In addition, the bonding time is short, pollution-free, safe and hygienic, energy saving, and low cost.

  Since the hot-melt adhesive is solid at room temperature, it can be used in the form of a film or fiber, or a film obtained by forming an adhesive layer in advance on a base film such as polyester. Here, a sheet material in which a hot melt film is formed on a base film made of polyethylene terephthalate is used. The hot melt film is made of a resin having a softening point lower than that of the base film. When heated, only the hot melt film is melted to form a rubber-like adhesive and is cured when cooled. As the hot melt film, for example, a film mainly composed of ethylene / vinyl acetate copolymer (EVA), polyester, polyamide, thermoplastic elastomer, polyolefin, or the like can be used. In addition, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (silicon oxide (SiOx), silicon oxynitride (SiOxNy) ( It is preferable to coat a film such as x> y) or silicon nitride oxide (SiNxOy) (x> y).

  As shown in FIG. 12, by performing a series of steps continuously using a laminating apparatus, the peeling / sealing process can be performed efficiently.

  Note that this embodiment can be freely combined with the above embodiment.

(Embodiment 7)
In this embodiment, FIG. 13 illustrates one mode in which the semiconductor device including the antenna described in the above embodiment is used as a wireless chip.

  The wireless chip described in this embodiment includes an element formation layer 920, an antenna 921, a substrate 922, and a cover material 923. The element formation layer 920 and the antenna are provided between the substrate 922 and the cover material 923. The antenna 921 is electrically connected to the element formation layer 920 (FIG. 13A).

  FIG. 13B is a block diagram illustrating one mode of a functional structure of the wireless chip illustrated in FIG.

  In FIG. 13B, the element formation layer 920 includes a demodulation circuit 909, a modulation circuit 904, a rectifier circuit 905, a microprocessor 906, a memory 907, and a switch 908 for applying load modulation to the antenna 921. The antenna 921 is electrically connected to the element formation layer 920, and a capacitor 903 is provided between both terminals of the antenna 921. Note that the number of memories 907 is not limited to one, and a plurality of memories 907 may be used, such as SRAM, flash memory, ROM, or FeRAM.

  A signal transmitted as a radio wave from the reader / writer is converted into an AC electrical signal by electromagnetic induction in the antenna 921. The demodulation circuit 909 demodulates the alternating electrical signal and transmits it to the microprocessor 906 at the subsequent stage. The rectifier circuit 905 generates a power supply voltage using an alternating electrical signal and supplies the power supply voltage to the subsequent microprocessor 906. The microprocessor 906 performs various arithmetic processes according to the input signal. The memory 907 stores programs and data used in the microprocessor 906, and can also be used as a work area during arithmetic processing.

  When data is sent from the microprocessor 906 to the modulation circuit 904, the modulation circuit 904 can control the switch 908 and apply load modulation to the antenna 921 in accordance with the data. The reader / writer can read the data from the microprocessor 906 as a result of receiving the load modulation applied to the antenna 921 by radio waves.

  Note that the wireless chip does not necessarily have the microprocessor 906. The signal transmission method is not limited to the electromagnetic coupling method shown in FIG. 13B, and an electromagnetic induction method, a microwave method, or other transmission methods may be used. In addition, the wireless chip may use a passive type in which the power supply voltage is supplied to the element formation layer by radio waves without mounting a power source (battery), or the power supply voltage is supplied to the element formation layer instead of the antenna. An active type in which a power source (battery) is mounted may be used, or a power source voltage may be supplied by radio waves and a power source.

  As described above, the wireless chip has a point of performing contactless communication, a point of being able to read a plurality of points, a point of being able to write data, a point of being able to be processed into various shapes, and a direction depending on a selected frequency. It has advantages such as wide applicability and wide recognition range. Wireless chips can be used for IC tags that can identify individual information about people and things by wireless communication without contact, labels that can be attached to target objects by label processing, wristbands for events and amusements, etc. Can be applied. Further, the wireless chip may be molded using a resin material, or may be directly fixed to a metal that hinders wireless communication. Furthermore, the wireless chip can be used for system operations such as an entrance / exit management system and a payment system.

  Next, one mode when the above-described wireless chip is actually used will be described. A reader / writer 320 is provided on the side surface of the portable terminal including the display portion 321, and a wireless chip 323 is provided on the side surface of the article 322 (FIG. 14A). When the reader / writer 320 is held over the wireless chip 323 included in the product 322, the display unit 321 displays information about the product, such as a description of the product, such as the raw material and origin of the product, the inspection result for each production process, and the history of the distribution process. The Further, when the product 326 is conveyed by the belt conveyor, the product 326 can be inspected using the reader / writer 324 and the wireless chip 325 provided in the product 326 (FIG. 14B). In this manner, by using a wireless chip in the system, information can be easily acquired, and high functionality and high added value are realized.

  In this manner, a semiconductor device including an antenna can be used as a wireless memory or a wireless processor because it can communicate with external information.

  Note that this embodiment can be freely combined with the above embodiment.

(Embodiment 8)
In this embodiment, an application in the case where the semiconductor device including the antenna described in the above embodiment is used as a wireless chip will be described. Wireless chips include, for example, banknotes, coins, securities, bearer bonds, certificate documents (driver's license, resident's card, etc., FIG. 16A), packaging containers (wrapping paper, bottles, etc. )), Recording media such as DVD software, CD and video tape (FIG. 16C), vehicles such as cars, motorcycles and bicycles (FIG. 16D), personal items such as bags and glasses (FIG. 16 E)), can be used in foods, clothing, daily necessities, electronic devices and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions or television receivers), cellular phones, and the like.

  Note that the wireless chip can be fixed to the article by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Forgery can be prevented by providing wireless chips on banknotes, coins, securities, bearer bonds, certificates, etc. In addition, by providing wireless chips in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. In addition, forgery and theft can be prevented by providing a wireless chip in vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by burying a wireless tag in a living creature such as livestock, it is possible to easily identify the year of birth, sex, type, or the like.

  As described above, the semiconductor device of the present invention can be provided and used for any article (including a living thing). Note that this embodiment can be freely combined with the above embodiment.

4A and 4B illustrate a method for manufacturing an antenna of the present invention. The figure which shows the structure of the antenna of this invention. The figure which shows the structure of the antenna of this invention. 4A and 4B illustrate a method for manufacturing an antenna of the present invention. 4A and 4B illustrate a method for manufacturing an antenna of the present invention. A method for manufacturing an antenna using a laser direct drawing apparatus. A method for manufacturing an antenna using a droplet discharge method. The figure which shows bonding of an element formation layer and an antenna. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B show a peeling / sealing process of a semiconductor device of the present invention. The block diagram at the time of using a semiconductor device as a radio | wireless chip. The figure which shows the articles | goods which mounted the semiconductor device of this invention. The figure which shows the structure of the conventional radio | wireless chip. The figure which shows the articles | goods which mounted the semiconductor device of this invention.

Explanation of symbols

100 Base film 101 Mold 102 Recess 103 Conductor sheet 104 Conductor 105 Projected part 106 Recessed part 107 Formed part 120 Press means 121 Press part 122 Blade part 123 Blade part 124 Conductor sheet 125 Conductor

Claims (26)

An element forming layer provided on the substrate;
An antenna provided on the element formation layer,
The antenna has a film and a conductor,
The element formation layer and the conductor are electrically connected,
The said film has a recessed part in the surface, The said conductor is provided in the said recessed part, The semiconductor device characterized by the above-mentioned. An element forming layer provided on the substrate;
An antenna provided on the element formation layer,
The antenna has a film and a conductor,
The element formation layer and the conductor are electrically connected,
The film has a recess on the surface, the conductor is provided in a part of the surface of the film and the recess, and the conductor provided in a part of the surface of the film and the recess is formed in the element forming layer. A semiconductor device which is electrically connected. In claim 1 or claim 2,
The semiconductor device is characterized in that the antenna is provided so as to overlap with the element formation layer. In any one of claims 1 to 3, the cross-sectional structure of the recess, the recess of the cross section of the upper side is longer tapered than the lower edge, the long tapered lower sides than the upper side Or a semiconductor device characterized by being stepped. In any one of Claims 1 thru | or 4 ,
The semiconductor device , wherein the element formation layer and the antenna are electrically connected through a connection terminal between the element formation layer and the antenna . In any one of Claims 1 thru | or 5 ,
The semiconductor device, wherein the substrate is a flexible substrate. Having a film and a conductor,
The film has a recess on the surface,
The conductor is provided on the surface and recess of the film,
An antenna, wherein a conductor provided on the surface of the film and the recess is electrically connected.   8. The cross-sectional structure of the concave portion according to claim 7, wherein the upper side of the cross section of the concave portion is a tapered shape having a longer side than the lower side, a tapered side having a lower side longer than the upper side, or a step shape. Characteristic antenna. Forming a recess in the film,
An antenna is formed by providing a conductor in the concave portion of the film,
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Forming a recess in the film,
An antenna is formed by selectively etching the conductor sheet so as to leave the conductor sheet provided in the concave portion of the film, and a conductive sheet is provided on the surface and the concave portion of the film.
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Forming a recess in the film, selectively discharging the conductive composition to form an antenna by providing a conductor in the recess of the film,
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Bonding a conductor sheet to the film, pressing the mold on the film and the conductor sheet to form a recess,
Forming an antenna by selectively etching the conductor sheet to leave a conductor sheet provided in the recess of the film;
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Bonding a conductor sheet to the film, pressing the mold on the film and the conductor sheet to form a recess,
Forming an antenna by selectively peeling off the conductor sheet using physical means so as to leave the conductor sheet provided in the recess of the film;
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Bonding a conductor sheet to the film,
Selectively cutting the conductor sheet;
Press the mold on the cut conductor sheet and the film located below the conductor sheet to form a recess,
Forming an antenna by selectively etching the conductor sheet to leave a conductor sheet provided in the recess of the film;
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. Bonding a conductor sheet to the film,
Selectively cutting the conductor sheet;
Press the mold on the cut conductor sheet and the film located below the conductor sheet to form a recess,
Forming an antenna by selectively peeling off the conductor sheet using physical means so as to leave the conductor sheet provided in the recess of the film;
A method for manufacturing a semiconductor device, wherein the antenna and an element formation layer formed over a substrate are electrically connected. In any one of Claims 9 to 15,
A method for manufacturing a semiconductor device, wherein the element formation layer and the antenna are connected to each other through a connection terminal between the element formation layer and the antenna . Forming a recess in the film,
Provided by bonding a conductor sheet to the surface and recesses of the film,
A method for manufacturing an antenna, wherein the conductor sheet is selectively etched so as to leave a conductor sheet provided in a concave portion of the film. Forming a recess in the film,
A method for manufacturing an antenna, comprising selectively discharging a conductive composition to form a conductor in a concave portion of the film. In claim 17 or claim 18,
The concave portion of the film is
A method for manufacturing an antenna, wherein the film is formed by pressing a mold. In claim 19,
The method for manufacturing an antenna, wherein the pressing of the mold on the film is performed while heating. In claim 17 or claim 18,
The concave portion of the film is
A method for manufacturing an antenna, wherein the film is formed by irradiating a laser beam. Bonding a conductor sheet to the film,
Pressing a mold on the film and the conductor sheet to form a recess,
A method for manufacturing an antenna, wherein the conductor sheet is selectively etched so as to leave a conductor sheet provided in a concave portion of the film. Bonding a conductor sheet to the film,
Pressing a mold on the film and the conductor sheet to form a recess,
A method for manufacturing an antenna, wherein the conductor sheet is selectively peeled off using physical means so as to leave the conductor sheet provided in the concave portion of the film. Bonding a conductor sheet to the film,
Selectively cutting the conductor sheet;
Press the mold on the cut conductor sheet and the film located below the conductor sheet to form a recess,
A method for manufacturing an antenna, wherein the conductor sheet is selectively etched so as to leave a conductor sheet provided in a concave portion of the film. Bonding a conductor sheet to the film,
Selectively cutting the conductor sheet;
Press the mold on the cut conductor sheet and the film located below the conductor sheet to form a recess,
A method for manufacturing an antenna, wherein the conductor sheet is selectively peeled off using physical means so as to leave the conductor sheet provided in the concave portion of the film. In any one of Claims 22 to 25,
A method for manufacturing an antenna, which comprises performing heating while pressing a mold on the film and the conductor sheet.