JP5127176B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The invention disclosed in this specification relates to a semiconductor device and a manufacturing method thereof. In particular, the present invention relates to a semiconductor device capable of communicating data by wireless communication and a manufacturing method thereof.

  In recent years, development of semiconductor devices capable of communicating data by wireless communication has been actively promoted. Such semiconductor devices are called IC tags, ID tags, RF (Radio Frequency) tags, RFID (Radio Frequency Identification) tags, wireless tags, electronic tags, wireless processors, wireless memories, wireless chips, and the like. Hereinafter, a semiconductor device capable of communicating data by wireless communication may be referred to as “RFID tag”.

  The RFID tag has an antenna and an integrated circuit (IC chip). One of the problems required for the RFID tag is improvement of reliability.

In order to achieve improvement in reliability, there is a method of sealing both surfaces of a substrate on which components such as an IC chip, a capacitor, and an antenna coil are mounted using a sheet member (for example, see Patent Document 1). By controlling the distance between each surface of the substrate and the sheet member to a constant interval using an adhesive, the unevenness of the component is not exposed on the surface. As a result, breakage of the uneven portion is suppressed, and the reliability of the IC card is improved.
JP 2001-63256 A

  In the method described above, an adhesive is used when the substrate on which the IC chip is mounted and the sheet member are bonded together. That is, an adhesive layer exists between the substrate on which the IC chip is mounted and the sheet member. The adhesive layer has fluidity before curing, and has adhesiveness and tackiness after curing. Specifically, hot melt adhesives and ionizing radiation curable adhesives such as ultraviolet rays or electron beams are used. Such adhesives usually have low moisture resistance. In addition, the adhesive layer may melt under conditions of high temperature and high humidity, and there is a possibility that the mounting substrate will infiltrate from the melted portion. For this reason, it is necessary to develop a semiconductor device not only excellent in chemical and physical strength but also excellent in environmental resistance.

  In view of the above problems, an object of the present invention is to provide a semiconductor device having excellent chemical and physical strength and excellent environmental resistance.

  In one method for manufacturing a semiconductor device of the present invention, a first laminated film having a first base material and a first adhesive layer is bonded so as to cover one surface of a laminated body having an integrated circuit, A second laminated film having a second base material and a second adhesive layer is bonded so as to cover the other surface of the laminated body to seal the laminated body, and the first laminated film and The second laminated film is cut. And it irradiates with a laser beam with respect to the cut surface (side surface) of the 1st laminated | multilayer film exposed by the said cutting | disconnection, and a 2nd laminated | multilayer film.

  In one embodiment of the method for manufacturing a semiconductor device of the present invention, a separation layer is formed over a substrate, an element layer having a plurality of integrated circuits is formed over the separation layer, and an insulating film is formed over the element layer. A part of the element layer and the insulating film is removed to form an opening. At the same time, a stacked body including the element layer and a part of the insulating film is formed, and the stacked body is peeled from the substrate. And the 1st laminated film which has the 1st substrate and the 1st adhesive layer so that one side of the exfoliated layered product may be covered, and the other side of the exfoliated layered product The second laminated film having the second base material and the second adhesive layer is adhered so as to cover the laminated body to seal the first laminated film and the second laminated film. Disconnect. And it irradiates with a laser beam with respect to the cut surface (side surface) of the 1st laminated | multilayer film exposed by the said cutting | disconnection, and a 2nd laminated | multilayer film.

  In one embodiment of the method for manufacturing a semiconductor device of the present invention, an element layer having a plurality of integrated circuits is formed on one surface of a substrate, the other surface of the substrate is ground, and the other ground surface of the substrate is ground. The first substrate and the first substrate so as to cover one surface of the laminate, and to form a laminate having an integrated circuit by dividing the polished substrate and the element layer. The first laminated film having the adhesive layer is adhered, and the second laminated film having the second base material and the second adhesive layer is adhered so as to cover the other surface of the laminated body. The body is sealed, and the first laminated film and the second laminated film are cut. And it irradiates with a laser beam with respect to the cut surface (side surface) of the 1st laminated | multilayer film exposed by the said cutting | disconnection, and a 2nd laminated | multilayer film.

  In the above structure, the polished substrate has a thickness of 2 to 50 μm.

  Moreover, in the said structure, a laser beam is irradiated so that it may become an incident angle of 30 degree | times or more and 80 degrees or less with respect to the cut surface (side surface) of the 1st laminated film and the 2nd laminated film exposed by the said cutting | disconnection. It is characterized by that.

In the above structure, an ultraviolet (UV) laser, a CO ₂ laser, or a YAG laser is used as the laser light.

  Further, in the above configuration, the first adhesive layer and the first layer can be obtained by irradiating the cut surfaces (side surfaces) of the first laminated film and the second laminated film exposed by the cutting with laser light. The cut surface (side surface) of the second adhesive layer is sealed with the first base material and the second base material.

  In the above structure, the stacked body includes an antenna.

  Using the first laminated film having the first substrate and the first adhesive layer and the second laminated film having the second substrate and the second adhesive layer, a laminate having an integrated circuit is obtained. Seal and cut the first laminated film and the second laminated film. And by irradiating a laser beam with respect to the cut surface (side surface) of the 1st laminated film and the 2nd laminated film exposed by the said cutting | disconnection, a said 1st base material and a said 2nd base material are carried out. Weld. Since the adhesive layer is not exposed to the outside by laser light irradiation, it is possible to prevent moisture from being absorbed inside the semiconductor device, and to improve the reliability of the semiconductor device. As a result, the yield of the semiconductor device can be improved and the cost of the semiconductor device can be reduced.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments and examples below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

  Also, in this specification, various materials and numerical conditions are described below, but these are the target material and numerical conditions to be formed to the last, and the elemental composition of what was actually formed It is easily understood by those skilled in the art that some errors may occur in the physical property values. In addition, it is easily understood by those skilled in the art that the results themselves measured by various analysis methods usually include errors. Therefore, the present invention is not construed as being limited to the description of the embodiments and examples shown below, and includes some errors from conditions such as materials and numerical values described in this specification. Are also included in the scope of the present invention.

(Embodiment 1)
In this embodiment, one structure of a method for manufacturing a semiconductor device of the present invention will be described with reference to drawings.

First, the peeling layer 12 is formed over the substrate 11 (FIG. 1A). Note that an insulating film may be provided over the substrate 11 before the release layer 12 is formed. In particular, when there is a concern about contamination from the substrate, an insulating film is preferably formed between the substrate 11 and the release layer 12. The insulating film provided between the substrate 11 and the release layer 12 includes a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), and a silicon oxide film containing nitrogen (SiO _x N _y film) (x> y) ( x and y are positive numbers), a silicon nitride film containing oxygen (SiN _x O _y film) (x> y) (x and y are positive numbers), or a stack of these films What is necessary is just to make it the structure.

  As the substrate 11, a glass substrate, a quartz substrate, a silicon substrate (wafer), a metal substrate, a ceramic substrate, a stainless steel substrate, an acrylic substrate, or the like can be used. Alternatively, a heat-resistant plastic substrate that can withstand heat treatment in a manufacturing process of a semiconductor device can be used. Among these substrates, it is preferable to use a plastic substrate or a glass substrate having heat resistance. There is no big restriction | limiting in the area and shape of a glass substrate. For this reason, when a glass substrate is used as the substrate 11, for example, one side is 1 meter or longer and a rectangular shape can be easily used, and productivity can be significantly improved. This is a significant advantage compared to the case of using a circular silicon substrate. In view of the cost of the substrate itself, it is preferable to use a glass substrate rather than a quartz substrate, a silicon substrate, a metal substrate, a ceramic substrate, a stainless steel substrate, or the like. In particular, when it is required to increase the size of the substrate, this becomes remarkable, and it is preferable to use a glass substrate even in view of mass productivity. In the present embodiment, a glass substrate is used as the substrate 11.

As a material for forming the release layer 12, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), Use an element selected from zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or a compound material containing the element as a main component. Can do. As a film formation method, various CVD methods such as a sputtering method and a plasma CVD method can be used. The structure of the release layer 12 may be a single layer structure or a laminated structure. For example, it is preferable that the tungsten (W) film is formed to a thickness of 20 to 40 nm by a sputtering method and then the surface of the tungsten (W) film is oxidized. As a method for oxidizing the surface of the tungsten (W) film, after the tungsten (W) film is formed, the surface may be directly plasma oxidized, or after the tungsten (W) film is formed, the tungsten (W) film may be oxidized. There is a method of forming a silicon oxide film in contact with the film. In the latter case, when the silicon oxide film is formed, the surface of the tungsten (W) film is naturally oxidized to form a metal oxide film. Note that the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is 2.75. (W ₄ O ₁₁ ) and X is 3 (WO ₃ ). In forming the tungsten oxide, the value of X mentioned above is not particularly limited, and the composition ratio may be determined based on the etching rate or the like.

  Next, a layer 13 (hereinafter, referred to as “element layer 13”) provided with a plurality of integrated circuits including elements such as thin film transistors is formed over the separation layer 12 (FIG. 1B). In the case where there is a concern about contamination such as impurities from the substrate 11 to the element layer 13, it is preferable to form a base film between the substrate 11 and the element layer 13. For example, when a glass substrate is used as the substrate 11, it is possible to prevent an alkali metal such as sodium (Na) contained in the glass substrate from entering the element layer 13 by providing a base film.

The base film may have a single layer structure or a laminated structure. In addition, as a material for the base film, a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), and a silicon oxide film containing nitrogen (SiO _x N _y film) formed by sputtering, plasma CVD, or the like are used. (X> y) (x and y are positive numbers), a silicon nitride film containing oxygen (SiN _x O _y film) (x> y) (x and y are positive numbers), and the like can be used. For example, in the case where the base film has a two-layer structure, a silicon nitride film containing oxygen is preferably used as the first insulating film, and a silicon oxide film containing nitrogen is used as the second insulating film.

  The element layer 13 includes a plurality of integrated circuits, and each of the plurality of integrated circuits is divided later to become a part of the semiconductor device. That is, a later semiconductor device includes at least a layer provided with an integrated circuit. An integrated circuit includes at least an element typified by a thin film transistor (TFT) or a resistor. By using the element, any integrated circuit such as a CPU, a memory, or a microprocessor can be formed. The element layer 13 may take a form having an antenna in addition to an element such as a thin film transistor. For example, an integrated circuit including thin film transistors operates using an alternating voltage generated by an antenna, and can transmit to a reader / writer by modulating the alternating voltage applied to the antenna. The antenna may be formed together with the thin film transistor, or may be formed separately from the thin film transistor and electrically connected later.

  The thin film transistor can be formed using an amorphous semiconductor or a crystalline semiconductor; however, when a thin film transistor with higher characteristics is used, it is preferable to provide the thin film transistor using a crystalline semiconductor. For example, an amorphous semiconductor film may be formed on the base film by sputtering, LPCVD, plasma CVD, or the like, and the amorphous semiconductor film may be crystallized to form a crystalline semiconductor film.

  Further, the semiconductor film constituting the thin film transistor may have any structure. For example, an impurity region (including a source region, a drain region, and an LDD region) may be formed, or a P channel type or an N channel type may be formed. Alternatively, a CMOS circuit may be formed. In addition, an insulating film (side wall) may be formed so as to be in contact with a side surface of the gate electrode provided above or below the semiconductor film, and nickel, or both of the source region and the drain region and the gate electrode may be formed. A silicide layer such as molybdenum or cobalt may be formed.

  Next, an insulating film 14 is formed so as to cover the element layer 13 as needed (FIG. 1C). The insulating film 14 may function as a protective layer for ensuring the strength of the element layer 13 and is preferably provided over the entire surface so as to cover the element layer 13, but is not necessarily provided over the entire surface and is selectively provided. It may be provided. As a material of the insulating film 14, a film containing carbon such as DLC (diamond-like carbon), a silicon oxide film containing nitrogen, a silicon nitride film containing oxygen, or a film made of an organic material (for example, a resin material such as epoxy) is used. Can be used. As a method for forming the insulating film 14, various CVD methods such as a sputtering method and a plasma CVD method, a spin coating method, a droplet discharge method, a printing method, and the like can be used. Note that although the insulating film 14 is provided in this embodiment mode, the present invention can also be implemented as a structure in which the insulating film 14 is not provided.

  Next, part of the element layer 13 and the insulating film 14 is etched to form an opening 15 to expose the peeling layer 12 (FIG. 1D). By forming the opening 15, a plurality of layers (hereinafter, referred to as “stacked body 17”) including a part of the element layer 13 and the insulating film 14 are formed. Note that the element layer 13 divided by the opening 15 can be referred to as a layer provided with an integrated circuit.

  The formation of the opening 15 selectively reduces (partially) the adhesion between the peeling layer 12 and the element layer 13 and gives a trigger when peeling the element layer 13 and the insulating film 14 from the substrate 11 later. is there. The opening 15 can be formed by laser light irradiation, photolithography, or the like. The opening 15 is preferably provided in a region avoiding the thin film transistor or the like constituting the element layer 13 or in an end portion of the substrate 11.

  The laser is composed of a laser medium, an excitation source, and a resonator. Lasers are classified into gas lasers, liquid lasers, and solid lasers according to the type of medium. In the present invention, any laser can be used. Note that a gas laser or a solid laser is preferably used, and a solid laser is more preferably used.

Examples of the gas laser include a helium neon laser, a carbon dioxide (CO ₂ ) laser, an excimer laser, and an argon ion laser. The excimer laser includes a rare gas excimer laser and a rare gas halide excimer laser. A rare gas excimer laser oscillates by three types of excited molecules, argon, krypton, and xenon. Argon ion lasers include rare gas ion lasers and metal vapor ion lasers.

  Liquid lasers include inorganic liquid lasers, organic chelate lasers, and dye lasers. Inorganic liquid lasers and organic chelate lasers use rare earth ions such as neodymium, which are used in solid-state lasers, as laser media.

A laser medium used as a solid-state laser is obtained by doping a solid matrix with an active species that acts as a laser. As the matrix, crystals or glass can be used. Examples of the crystal include YAG (yttrium / aluminum / garnet crystal), YLF, YVO ₄ , YAlO ₃ , sapphire, ruby, and alexandrite. In addition, as the active species having a laser action, for example, trivalent ions (Cr ³⁺ , Nd ³⁺ , Yb ³⁺ , Tm ³⁺ , Ho ³⁺ , Er ³⁺ , Ti ³⁺ ) can be used.

  The laser oscillation method may be a continuous oscillation type or a pulse oscillation type. Laser beam irradiation conditions, such as frequency, power density, energy density, and beam profile, are adjusted as appropriate in consideration of the properties and thickness of the material provided in the element layer 13 and the insulating film 14.

  In the step of irradiating the laser beam, ablation processing is used. Ablation processing is processing using a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion that has absorbed the laser beam is cut, photodecomposed, vaporized and evaporated. That is, in this step, the opening 15 is formed by irradiating a laser beam to break molecular bonds such as an insulating film provided in the element layer 13 or the insulating film 14, photodecompose, vaporize and evaporate. Forming.

The laser may be a solid-state laser having a wavelength of 1 to 380 nm (more preferably 15 to 20 nm) which is an ultraviolet region. Preferably, an Nd: YVO ₄ laser with a wavelength of 1 to 380 nm is used. This is because the Nd: YVO ₄ laser having a wavelength of 1 to 380 nm is more easily absorbed by the substrate than other high-wavelength lasers and can be ablated. Moreover, it is because the workability is good without affecting the periphery of the processed part.

  Next, the film 16 is attached over the insulating film 14 (FIG. 2A). The film 16 plays a role of ensuring a gap between the integrated circuits when the integrated circuit is later separated from the film 16. An expanded film may be used as a film that plays such a role. Moreover, you may use the film which laminated | stacked the film which protects the element layer 13, and an expanded film. Moreover, it is preferable that the film 16 has the property that the adhesive force is strong in a normal state, and the adhesive force becomes weak when irradiated with light. For example, a UV tape whose adhesive strength is weakened when irradiated with ultraviolet light may be used.

  Next, the element layer 13 and the insulating film 14 are peeled from the substrate 11 using physical means (FIG. 2B). Since the opening 15 is formed before peeling, the adhesion between the peeling layer 12 and the element layer 13 is selectively (partially) lowered. Therefore, the element layer 13 and the insulating layer 13 are insulated from the substrate 11 by physical means. The film 14 can be easily peeled off. As an example of physical means, there is a method of applying an impact (stress) from the outside using a wind pressure of a gas blown from a nozzle, a load using an ultrasonic wave or a wedge-shaped member, or the like. Note that the stacked body 17 having a part of the element layer 13 and the insulating film 14 separated in this step is a part of a later semiconductor device.

  Note that since the peeled substrate 11 can be reused after the peeling layer 12 is removed, a semiconductor device can be manufactured at lower cost. For example, even when a high-cost quartz substrate is used, a semiconductor device can be manufactured at low cost by repeatedly using the quartz substrate.

Moreover, after forming the opening 15 as described above, not only the method of peeling using physical means, but also forming the opening 15 and introducing the etching agent into the opening 15 to remove the peeling layer 12. Then, a peeling method using physical means can be used. In this case, all of the release layer 12 may be removed, or may be selectively removed so as to leave a part of the release layer. By leaving a part of the release layer 12, the laminate 17 can be held on the substrate 11 even after the release layer is removed. Further, by performing the treatment without removing all of the release layer 12, the consumption of the etching agent can be reduced and the treatment time can be shortened, so that the cost and the efficiency can be improved. As the etchant, halogen fluoride such as chlorine trifluoride gas or a gas or liquid containing halogen can be used. Further, CF ₄ , SF ₆ , NF ₃ , F _{2 and the} like can be used.

  Next, a first laminated film (also referred to as “laminate film”) is provided on one surface of the laminate 17 peeled from the substrate 11. The first laminated film is provided by performing one or both of heat treatment and pressure treatment after adhering to the surface of the laminate 17 on which the element layer 13 is provided.

  Next, the second laminate is formed on the other surface of the laminate 17 (the surface opposite to the surface on which the first laminate film is provided, that is, the surface on the side of the laminate 17 on which the insulating film 14 is provided). Provide a film. In this case, in order to form a semiconductor device thinner, it is preferable to newly provide a second laminated film after removing the film 16. Moreover, it is preferable to use the thing of the same structure as a 1st laminated film for a 2nd laminated film.

  The first laminated film and the second laminated film have an adhesive layer on at least one surface, and may be bonded so that the adhesive layer and the laminated body 17 are in contact with each other. Moreover, the first laminated film and the second laminated film are constituted by a film in which a base material (base film) and an adhesive layer are laminated. In the present embodiment, the first laminated film has the first base material 18 and the first adhesive layer 20A, and the second laminated film has the second base material 19 and the second adhesive layer 20B. have. Then, in the vicinity of the side surface of the laminate 17, the first adhesive layer 20A of the first laminated film and the second adhesive layer 20B of the second laminated film are bonded together to form the adhesive layer 20. (FIG. 2 (C)).

  As the base material (base film), at least a material having a melting point higher than that of the material used as the adhesive may be used, and a material suitable for the purpose may be used. That is, not only a single-layer film but also films having different properties may be appropriately laminated. Specifically, the film that can be used as the substrate is polyethylene, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), nylon, ethylene / vinyl alcohol copolymer film (EVOH), polypropylene, polystyrene, AS resin, ABS resin ( Resin in which three of acrylonitrile, butadiene and styrene are polymerized), methacrylic resin (also called acrylic), polyvinyl chloride, polyacetal, polyamide, polycarbonate, modified polyphenylene ether, polybutylene terephthalate (PBT), polysulfone, polyethersulfone ( PES), polyphenylene sulfide, polyamideimide, polymethylpentene, phenol resin, urea resin, melamine resin, epoxy resin, diallyl phthalate resin Unsaturated polyester resin, polyimide, a material such as polyurethane, fibrous materials (e.g. paper), and the like antistatic subjected to film (antistatic film).

  Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film on which an antistatic material is attached may be a film in which an antistatic material is attached to one side of the base film, or an antistatic material may be attached to both sides. It may be a film. In addition, the film with the antistatic material attached on one side may be attached so that the surface with the antistatic material attached is on the outer side of the film, but preferably on the inner side of the film. Paste like so. The antistatic material may be attached to the entire surface of the film or a part of the surface. Antistatic materials include metals such as aluminum, oxides containing ITO and indium (ITO), metal salts of amphoteric surfactants, imidazoline-type amphoteric surfactants, side chains with carboxyl groups and quaternary ammonium bases. Examples thereof include a resin material containing a crosslinkable copolymer polymer. By using the antistatic film as the first base material 18 and the second base material 19, it is possible to prevent the integrated circuit from being adversely affected by external static electricity.

  As the adhesive, at least a material having a lower melting point than the material used as the substrate may be used. For example, a polyethylene resin, a polyester resin, a thermoplastic resin such as ethylene vinyl acetate (EVA), a material mainly composed of a thermosetting resin, an ultraviolet curable resin, or the like can be used. When the film is adhered to the element layer by performing heat treatment and pressure treatment, the adhesive layer provided on the outermost surface of the laminated film or the layer provided on the outermost layer (in the adhesive layer) No) is melted by heat treatment and bonded by pressure.

  Further, in order to further prevent moisture from entering the semiconductor device (laminated body 17) to be finally formed, silicon dioxide (silica) powder is interposed between the base material and the adhesive layer. It is preferable to coat. By coating, the moisture resistance can be further enhanced even in a high temperature and high humidity environment. For the same purpose, a film mainly composed of silicon oxide, silicon nitride, silicon nitride containing oxygen, silicon oxide containing nitrogen, or ceramics (for example, aluminum oxide) is formed between the base material and the adhesive layer. However, by using a laminated film formed by a CVD method, a sputtering method, a vapor deposition method, or the like, moisture or the like may be further prevented from entering the semiconductor device (laminated body 17) to be finally formed. Further, in order to increase the physical strength of the finally formed semiconductor device, carbon is a main component on the surface opposite to the surface of the base material on which the adhesive layer is provided (exposed side). A material (for example, diamond-like carbon) may be coated by a CVD method, a sputtering method, a vapor deposition method, or the like. Alternatively, a mixture of silicon dioxide (silica) powder, silicon nitride containing oxygen, or silicon oxide containing nitrogen and a material containing carbon as a main component may be coated. In addition, these processes may perform only one of a 1st laminated | multilayer film and a 2nd laminated | multilayer film, and may perform both.

  Next, the first laminated film and the second laminated film are cut by a cutting means. The cutting means corresponds to a dicer, laser, wire saw or the like. 2C, the adhesive layer 20 covers the periphery of the laminate 17, and both sides of the adhesive layer 20 are the first base material 18 and the second base material 19, respectively. A sealed structure is obtained. At this time, the side surface of the adhesive layer 20 is structured to be exposed to the outside.

  Next, laser light is irradiated to the cut surfaces (side surfaces) of the first laminated film and the second laminated film (FIG. 2C). The first base material 18 and the second base material 19 are welded to form the third base material 21 by the laser light irradiation, and the cut surface (side surface) of the adhesive layer 20 is sealed by the third base material 21. A stopped structure is obtained. At this time, at least one of the first base material 18 and the second base material 19 may be melted by laser light irradiation and welded to each other. Preferably, the first base material 18 and the second base material are used. 19 may be melted together and welded together. A semiconductor device in which the cut surface (side surface) of the adhesive layer 20 is covered is formed by the third base material 21 (FIG. 2D). In addition, the shape of the 3rd base material 21 shown to FIG. 2 (D) is typical, and is not limited to this shape.

The conditions of the laser beam used in the above steps are not particularly limited, and any conditions may be used as long as the first substrate 18 and the second substrate 19 can be welded. For example, a CO ₂ laser can be used. A laser having a wavelength of 100 to 380 nm (UV) (for example, a solid laser such as a third harmonic of an Nd: YVO ₄ laser) can also be used. If an ultraviolet laser is used, the power density may be ² W / cm ² or more and 3 W / cm ² or less. The scanning speed of the laser beam is 0.5 mm / sec. 1.5 mm / sec. What is necessary is as follows. The scanning speed of the laser light is a speed at which the laser light moves relative to the cut surfaces (side surfaces) of the first laminated film and the second laminated film. Further, the shape of the beam spot of the laser beam to be irradiated is not particularly limited, and may be a circle, an ellipse, a rectangle, or the like.

  Next, the irradiation angle of laser light will be described. The irradiation direction of the laser beam with respect to the cut surface (side surface) of the first laminated film and the second laminated film, and the perpendicular (or the laminated body 17) with respect to the cut surface (side surface) of the first laminated film and the second laminated film. The angle formed with the plane parallel to one surface), that is, the incident angle of the laser beam with respect to the cut surface (side surface) of the first laminated film and the second laminated film (θ: 0 ° ≦ θ ≦ 90 °) Is preferably irradiated obliquely with respect to the cut surfaces (side surfaces) of the first laminated film and the second laminated film as shown in FIG. If θ is less than 30 degrees, if the first laminated film and the second laminated film cannot sufficiently absorb the laser beam, there is a possibility that the element provided in the laminated body 17 may be destroyed. It is preferable to set it to a degree or more. Moreover, since it becomes difficult to seal the cut surface of the adhesive layer 20 when θ = 80 degrees, it is preferable that θ = 80 degrees or less. For the above reasons, it is preferable that θ = 30 degrees or more and 80 degrees or less (more preferably, θ = 45 degrees or more and 65 degrees or less), but the cut surfaces of the first laminated film and the second laminated film ( Irradiation (that is, θ = 90 degrees) may be performed in parallel to the side surface. Note that although a method of irradiating laser light is used in this embodiment, other methods are used as long as the adhesive layer 20 can be sealed with the first base material 18 and the second base material 19. May be.

  As mentioned above, after sealing the laminated body 17 using the 1st and 2nd laminated film which has an adhesive bond layer, the cut surface (side surface) of the exposed 1st laminated film and 2nd laminated film The first base material 18 and the second base material 19 are welded to each other by irradiating a laser beam with the laser beam. By adopting a structure in which the cut surface (side surface) of the adhesive layer is not exposed to the outside, it is possible to suppress the intrusion of moisture and substances that cause contamination into the semiconductor device, and the chemical and physical strength. It is possible to obtain a semiconductor device that is excellent in environmental resistance and excellent in environmental resistance. As a result, the yield of the semiconductor device can be improved and the cost of the semiconductor device can be reduced. In addition, the semiconductor device manufactured in this embodiment is formed by being peeled from a substrate that is not usually flexible because of its thickness. Therefore, a flexible semiconductor device can be obtained, and the semiconductor device can be provided in various places such as a curved portion of an article.

(Embodiment 2)
In this embodiment, a method for manufacturing a semiconductor device, which is different from the method described in Embodiment 1, will be described.

  First, a layer 13 (hereinafter referred to as “element layer 13”) provided with a plurality of integrated circuits each including an element such as a thin film transistor is formed over one surface of the substrate 11 (FIG. 1B). In this specification, “one surface of the substrate 11” refers to the surface on which the element layer 13 is provided. In addition, since the material of the board | substrate 11 and the element layer 13, the formation method, etc. were demonstrated in Embodiment 1, the process after it is demonstrated in detail.

  When there is a concern about contamination such as impurities from the substrate 11 to the element layer 13, it is preferable to form a base film between the substrate 11 and the element layer 13. The base film described in Embodiment 1 can be used as appropriate.

  Further, an insulating film may be formed so as to cover the element layer 13 as a protective layer for ensuring the strength of the element layer 13. This insulating film is preferably provided over the entire surface so as to cover the element layer 13, but it is not necessarily provided over the entire surface and may be selectively provided. As a material for the insulating film, a film containing carbon such as DLC (diamond-like carbon), a silicon oxide film containing nitrogen, a silicon nitride film containing oxygen, or a film made of an organic material (for example, a resin material such as epoxy) is used. be able to. As a method for forming the insulating film, various CVD methods such as a sputtering method and a plasma CVD method, a spin coating method, a droplet discharge method, a printing method, and the like can be used.

  Next, the film 26 is pasted on the element layer 13. Subsequently, the film 26 is placed on the suction jig using the substrate fixing jig 51 (frame) (FIG. 3A). The suction jig is composed of a porous chuck 52 and a stage 53, for example. The porous chuck 52 is made of a porous material and has a vacuum chuck mechanism. Further, in order to prevent the substrate fixing jig 51 itself from being ground and polished, one surface of the substrate 11 (the surface on which the film 26 is provided) is more than one surface of the substrate fixing jig 51. The film 26 is installed so as to be higher.

  The film 26 serves to fix the substrate when the substrate is ground and polished later, to protect the element layer 13, and to secure a gap between the semiconductor devices when the semiconductor device is separated from the film 26. Fulfill. An expanded film may be used as a film that plays such a role. Moreover, you may use the film which laminated | stacked the film which protects the element layer 13, and an expanded film. Moreover, it is preferable that the film 26 has the property that the adhesive force is strong in a normal state and the adhesive force is weakened when irradiated with light. For example, a UV tape whose adhesive strength is weakened when irradiated with ultraviolet light may be used.

  Next, the other surface of the substrate 11 is ground by the grinding means 41. At this time, the substrate 11 is ground to a thickness of 100 μm or less. Generally, in this grinding process, the other surface of the substrate 11 is ground by rotating one or both of the stage 53 to which the substrate 11 is fixed and the grinding means 41. The grinding means 41 corresponds to, for example, a grindstone. In this specification, “the other surface of the substrate 11” is a surface opposite to the surface on which the element layer 13 is provided, and refers to a surface to be ground by the grinding means 41. In addition, in order to remove the dust produced by the grinding process, you may wash | clean as needed. In this case, water droplets generated by washing are naturally dried or dried using a drying means. Specific examples of the drying means include a method of rotating the substrate 11 and a method of blowing air (atmosphere) or a gas such as a rare gas to the substrate 11 using a blower.

  Next, the other surface of the ground substrate 11 is polished by the polishing means 42 (FIG. 3B). The substrate 11 may be polished so as to be thinner than 100 μm, but is preferably polished to be 2 μm to 50 μm (more preferably 4 μm to 30 μm). By grinding and polishing the substrate 11 in this manner, the substrate 11 becomes flexible, and a flexible semiconductor device can be manufactured without using a method of peeling the element layer from the substrate 11. It becomes possible. Also in this polishing step, the other surface of the substrate 11 is polished by rotating one or both of the stage 53 to which the substrate 11 is fixed and the polishing means 42 as in the above-described grinding step. The polishing means 42 corresponds to, for example, a polishing pad coated with polishing abrasive grains (such as cerium oxide). In addition, in order to remove the dust produced | generated by the grinding | polishing process, you may wash | clean as needed. In this case, water droplets generated by washing are naturally dried or dried using a drying means. Specific examples of the drying means include a method of rotating the substrate 11 and a method of blowing air (atmosphere) or a gas such as a rare gas to the substrate 11 using a blower.

  Next, the film 26 is removed from the suction jig. Subsequently, the substrate 11 and the element layer 13 are cut by the cutting means 43 without cutting the film 26 (FIG. 3C). At this time, a boundary line between the integrated circuits (between the integrated circuits) is cut so that each of the plurality of integrated circuits included in the element layer 13 is separated. Further, the element provided in the element layer 13 is not cut, and the insulating film provided in the element layer 13 is cut. Through this cutting step, a plurality of stacked bodies 27 each having a thinned substrate 11 and a layer 13 provided with integrated circuits are formed. The cutting means corresponds to, for example, a dicer, a laser, or a wire saw.

  Next, the film 26 is stretched so that a gap is formed between the stacked bodies 27 (FIG. 4A). At this time, in order to make the gaps between the laminated bodies 27 uniform, it is preferable that the film 26 is stretched uniformly in the surface direction (pulled uniformly in the surface direction). Subsequently, the film 26 is irradiated with light. When the film 26 is a UV tape, ultraviolet light is irradiated. By irradiating light, the adhesive force of the film 26 is weakened, and the adhesion between the film 26 and the laminate 27 is weakened. Then, the laminate 27 can be separated from the film 26 by physical means.

  In the above step, the step of irradiating the film 26 with light is performed after the step of stretching the film 26, but the present invention is not limited to this order. A step of stretching the film 26 may be performed after the step of irradiating the film 26 with light.

  Next, the sealing process of the laminated body 27 is performed. There are two methods for the sealing process. First, the first method will be described.

  In the first method, first, the laminate 27 is separated from the film 26 by the transfer means 44 (FIG. 4B). Subsequently, in order to adhere one surface of the laminated body 27 to the first laminated film 61, the laminated body 27 is placed on the first laminated film 61 by the transfer means 44. Note that the transfer means 44 specifically includes contact transfer means such as lift-up using a pin, pickup using an arm, vacuum suction using a vacuum mechanism, magnetic force, Non-contact transfer means using air pressure or electrostatic force as adsorption force or levitation force.

  Next, the other surface of the laminated body 27 is bonded to the second laminated film 62 (FIG. 4C). This step is performed using an adhesive device (hereinafter referred to as “laminating device”). The laminating device includes a first roll 45 having one or both of a heating unit and a pressing unit, The second laminated film 62 is wound around and the second laminated film 62 is supplied to the first roll 45.

  The first laminated film 61 provided with a plurality of laminated bodies 27 is sequentially conveyed by the conveying means 47. Moreover, the 1st roll 45 and the 2nd roll 46 are rotating sequentially, respectively, and perform the sealing process of the laminated body 27 continuously. The sealing process performed here is one of the pressure process and the heat process when the first laminated film 61 to which the laminated body 27 is bonded passes between the first roll 45 and the conveying means 47. It corresponds to the process which adhere | attaches the 1st laminated film 61 and the 2nd laminated film 62 to the laminated body 27 by performing both. When the heat treatment is performed by the first roll 45 and the conveying means 47, the first roll 45 has a heating means corresponding to a heater or oil of a heating wire. Moreover, when performing both heat processing and pressurization processing, the adhesive bond layer provided in the outermost surface of the laminated | multilayer film is melt | dissolved by heat processing, and it adhere | attaches by pressurization. The transport means 47 corresponds to a belt conveyor, a plurality of rollers, or a robot arm.

  The first laminated film 61 used for sealing has a first base material and a first adhesive layer, and the second laminated film 62 has a second base material and a second adhesive layer. As the base material and the adhesive, those described in Embodiment Mode 1 can be used as appropriate. The first laminated film 61 and the second laminated film 62 are bonded to the laminated body 27 by thermocompression bonding (heat treatment and pressure treatment).

  Next, the first laminated film 61 and the second laminated film 62 are cut by the cutting means 48 (FIG. 4D). The cutting means 48 corresponds to a dicer, laser, wire saw or the like. Through this cutting process, a structure in which the adhesive layer covers the periphery of the laminate 27 and both surfaces of the adhesive layer are sealed with the first base material and the second base material is obtained. At this time, the side surface of the adhesive layer is exposed to the outside.

  Next, laser light is irradiated to the surface where the adhesive layer is exposed (side surface of the adhesive layer). By the laser light irradiation, the first base material and the second base material are welded to form a third base material. Then, a semiconductor device in which the side surface of the adhesive layer is also covered with the third base material is formed.

The conditions of the laser beam used in the above step are not particularly limited, and any conditions may be used as long as the first base material and the second base material can be welded. For example, a CO ₂ laser can be used. A solid laser (for example, Nd: YVO ₄ laser) having a wavelength of 100 to 380 nm (UV) can also be used. The irradiation angle (θ) of the laser beam with respect to the side surface of the adhesive layer may be irradiated obliquely with respect to the side surface of the adhesive layer (preferably θ = 10 degrees or more and 60 degrees or less (more preferably θ = 25 degrees or more and 45 degrees or less)) may be irradiated in parallel to the side surface of the adhesive layer (that is, θ = 90 degrees). In particular, in the case of using a laser when cutting the first laminated film 61 and the second laminated film 62 described above, by appropriately setting the laser conditions, the adhesive layer can be formed simultaneously with the cutting of the first substrate and the first substrate. It can also be set as the structure sealed with the 2nd base material.

  Next, the second method will be described.

  First, in order to reduce the adhesion between the film 26 and the laminate 27, the film 26 is irradiated with light. Next, a first laminated film 61 is provided so as to cover one surface of the laminated body 27 (FIG. 5A). Subsequently, the first laminated film 61 is heated by the heating means 49, thereby bonding one surface of the laminated body 27 to the first laminated film 61. Subsequently, the laminated body 27 is separated from the film 26 (FIG. 5B).

  In the second method, the first laminated film 61 is provided so as to cover one surface of the laminated body 27 after the film 26 is irradiated with light. However, the present invention is not limited to this order. For example, the first laminated film 61 may be provided so as to cover one surface of the laminated body 27, and the film 26 may be irradiated with light after the first laminated film 61 is heated.

  Next, the other surface of the laminated body 27 is bonded to the second laminated film 62. Subsequently, the first laminated film 61 and the second laminated film 62 are cut. The cutting means corresponds to a dicer, laser, wire saw or the like. Through this cutting process, a structure in which the adhesive layer covers the periphery of the laminate 27 and both surfaces of the adhesive layer are sealed with the first base material and the second base material is obtained. At this time, the side surface of the adhesive layer is exposed to the outside.

  Next, laser light is irradiated to the surface where the adhesive layer is exposed (side surface of the adhesive layer). By the laser light irradiation, the first base material and the second base material are welded to form a third base material. Then, a semiconductor device in which the side surface of the adhesive layer is also covered with the third base material is formed.

The conditions of the laser beam used in the above step are not particularly limited, and any conditions may be used as long as the first base material and the second base material can be welded. For example, a CO ₂ laser can be used. A solid laser (for example, Nd: YVO ₄ laser) having a wavelength of 100 to 380 nm (UV) can also be used. The irradiation angle (θ) of the laser beam with respect to the side surface of the adhesive layer may be applied obliquely to the side surface of the adhesive layer (preferably, θ = 10 degrees to 60 degrees (more preferably, θ = 25). Degrees to 45 degrees)) may be irradiated parallel to the side of the adhesive layer (ie, θ = 90 degrees). In particular, in the case of using a laser when cutting the first laminated film 61 and the second laminated film 62 described above, by appropriately setting the laser conditions, the adhesive layer can be formed simultaneously with the cutting of the first substrate and the first substrate. It can also be set as the structure sealed with the 2nd base material.

  A semiconductor device completed through the above steps can suppress the intrusion of moisture or a substance that causes contamination, and can obtain a semiconductor device having excellent chemical and physical strength and excellent environmental resistance. Can do. As a result, the yield of the semiconductor device can be improved and the cost of the semiconductor device can be reduced. Further, as a result of the thin substrate, this semiconductor device can be provided in various places such as a curved surface portion of an article. Further, as a result of the thin substrate, the thickness of the semiconductor device as a whole is reduced, and even if the semiconductor device is mounted on an article, the design is not deteriorated.

  This embodiment can be freely combined with the above embodiment. That is, the material and the formation method described in the above embodiment can be used in this embodiment, and the material and the formation method described in this embodiment can be used in the above embodiment.

  In this embodiment, a method for manufacturing a semiconductor device including a thin film transistor and an antenna will be described with reference to drawings. In particular, the structure of the element layer will be described in detail.

  First, the separation layer 702 is formed over the substrate 701 (FIG. 6A). Subsequently, a base film 703 is formed over the peeling layer 702 (FIG. 6B). As the materials and the formation method of the substrate 701, the separation layer 702, and the base film 703, those described in Embodiment Mode 1 can be used, and description thereof is omitted here. Hereinafter, a process of forming an element layer on the base film 703 will be described. Note that the present invention can be implemented even when the base film 703 is not provided.

  First, an amorphous semiconductor film 704 (eg, a film containing amorphous silicon as a main component) is formed over the base film 703 (FIG. 6C). The amorphous semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by various CVD methods such as a sputtering method and a plasma CVD method. Subsequently, the amorphous semiconductor film 704 is crystallized to form a crystalline semiconductor film. As crystallization methods, laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, thermal crystallization using a metal element that promotes crystallization A method combining a laser crystallization method and a laser crystallization method can be used. After that, the obtained crystalline semiconductor film is processed into a desired shape to form crystalline semiconductor films 706 to 710 (FIG. 7A). Note that the base film 703 and the amorphous semiconductor film 704 can be formed successively without being exposed to the air.

  An example of a manufacturing process of the crystalline semiconductor films 706 to 710 will be briefly described below. As a method for crystallizing an amorphous semiconductor film, a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or a metal that promotes crystallization Examples include a combination of a thermal crystallization method using an element and a laser crystallization method. As another crystallization method, crystallization may be performed by applying a DC bias to generate thermal plasma and applying the thermal plasma to the semiconductor film.

  In this embodiment, after an amorphous semiconductor film with a thickness of 25 to 200 nm is formed by a plasma CVD method, the amorphous semiconductor film is crystallized by heat treatment to form crystalline semiconductor films 706 to 710. As the heat treatment, a laser heating furnace, laser irradiation, irradiation of light emitted from a lamp instead of laser light (hereinafter referred to as lamp annealing), or a combination thereof can be used.

When laser irradiation is used, continuous wave laser light (CW laser light) or pulsed laser light (pulse laser light) can be used. Usable laser beams include gas lasers such as Ar laser, Kr laser, and excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as dopants are added as a medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, copper vapor lasers, and gold vapor lasers that oscillate from one or more types can be used. By irradiating the fundamental wave of such laser light and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. The Nd: YVO ₄ laser can be pulsated or continuously oscillated, but in the case of continuous oscillation, the laser power density is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ^2). cm ² ) is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, one or more added lasers, Ar ion lasers, and Ti: sapphire lasers that are continuously oscillated. It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When laser light is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

  In the case of crystallization using the above-described continuous wave laser or laser light oscillated at a frequency of 10 MHz or more, the surface of the crystallized semiconductor film can be made flat. As a result, it is possible to reduce the thickness of the gate insulating film 705 to be formed later, and contribute to improving the breakdown voltage of the gate insulating film.

  In addition, when ceramic (polycrystal) is used as a medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

  Since it is difficult to change the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission, whether it is single crystal or polycrystal, there is a certain limit to improving the laser output by increasing the dopant concentration. . However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, a great improvement in output can be expected.

  Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. Further, since the laser light emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser light by using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become. In addition, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the long side direction.

  By irradiating the semiconductor film with this linear beam, the semiconductor film can be heated more uniformly. When uniform heating to both ends of the linear beam is necessary, it is sufficient to arrange a slit at both ends to shield the energy attenuation portion.

  When a semiconductor film is heated using a linear beam having a uniform intensity obtained in this way and a semiconductor device is manufactured using the semiconductor film, the characteristics of the semiconductor device are made good and uniform. Can do.

Next, a gate insulating film 705 covering the crystalline semiconductor films 706 to 710 is formed. The gate insulating film 705 may be formed by various CVD methods such as a sputtering method and a plasma CVD method. Specifically, a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), a silicon oxide film containing nitrogen (SiO _x N _y film) (x> y) (x and y are positive numbers), oxygen A silicon nitride film containing Si (SiN _x O _y film) (x> y) (x and y are positive numbers) is formed as a single layer structure, or these films are stacked as appropriate. Further, the surface of the crystalline semiconductor films 706 to 710 is oxidized or nitrided by performing high density plasma treatment on the crystalline semiconductor films 706 to 710 in an atmosphere containing oxygen, nitrogen, or oxygen and nitrogen. A gate insulating film may be formed. A gate insulating film formed by high-density plasma treatment has excellent uniformity in film thickness, film quality, and the like as compared with a film formed by a CVD method, a sputtering method, or the like, and can form a dense film.

In this specification, “high density plasma treatment” means that the electron density of plasma is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and the electron temperature of plasma is 0.5 eV or more and 1.5 eV or less. It is characterized by being. Hereinafter, in the present specification, when simply described as “high-density plasma treatment”, the plasma treatment is performed under the above-described conditions. Although the electron density of the plasma is high, the electron temperature in the vicinity of the object to be processed (metal film) formed on the substrate is low, so that plasma damage to the substrate can be prevented. Further, since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or more, a dense film with excellent film thickness uniformity of an oxide formed by oxidation treatment can be formed. In addition, since the electron temperature of plasma is as low as 1.5 eV or less, the oxidation treatment can be performed at a lower temperature than the plasma treatment or the thermal oxidation method. For example, even if the plasma treatment is performed at a temperature lower than the strain point temperature of the glass substrate by 100 degrees or more (typically 250 to 550 ° C.), the plasma oxidation treatment can be sufficiently performed. Note that a microwave (2.45 GHz) is used as a frequency for forming plasma. Further, the plasma potential is as low as 5 V or less, and excessive dissociation of source molecules can be suppressed.

As an atmosphere containing oxygen, oxygen (O ₂ ), nitrogen dioxide (NO ₂ ), a mixed gas of dinitrogen monoxide (N ₂ O) and a rare gas, or oxygen (O ₂ ) and nitrogen dioxide ( A mixed gas of NO ₂ ) or dinitrogen monoxide (N ₂ O), a rare gas, and hydrogen (H ₂ ) can be used. As the atmosphere containing nitrogen, nitrogen _{(N 2)} or ammonia (NH _3), a mixed gas of a rare gas or a nitrogen _{(N 2)} or ammonia (NH _3), and a rare gas, hydrogen ( A mixed gas with H ₂ ) can be used. The surfaces of the crystalline semiconductor films 706 to 710 can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by high-density plasma.

  In the case where the gate insulating film 705 is formed by performing high-density plasma treatment, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the crystalline semiconductor films 706 to 710. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the crystalline semiconductor films 706 to 710 can be extremely low. Further, since the crystalline semiconductor films 706 to 710 are directly oxidized or nitrided, the thickness of the formed gate insulating film 705 can ideally be extremely small. Furthermore, since strong oxidation does not occur even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, by subjecting the surface of the semiconductor film to solid phase oxidation by the high-density plasma treatment shown here, the insulating film has a good uniformity and low interface state density without causing an abnormal oxidation reaction at the crystal grain boundary. Can be formed.

  Note that the gate insulating film 705 may be formed using only an insulating film formed by high-density plasma treatment. In addition, silicon oxide, silicon nitride containing oxygen, or nitrogen may be formed by a CVD method using plasma or thermal reaction. An insulating film such as silicon oxide may be deposited and stacked. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Further, the crystalline semiconductor films 706 to 710 which are crystallized by scanning in one direction while irradiating the amorphous semiconductor film 704 with a continuous wave laser or laser light oscillated at a frequency of 10 MHz or more are scanned with the beam. The crystal grows in the direction. Therefore, by arranging the transistor so that the scanning direction matches the channel length direction (the direction in which carriers flow when the channel formation region is formed) and combining the gate insulating film 705 formed by high-density plasma treatment, characteristic variation can be obtained. Thus, a transistor having a smaller field-effect mobility can be obtained.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 705. The first conductive film and the second conductive film may be formed by various CVD methods such as a sputtering method and a plasma CVD method. In this embodiment, the first conductive film is formed to a thickness of 20 to 100 nm, and the second conductive film is formed to a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), It can be formed using an element selected from niobium (Nb) or the like, or an alloy material or a compound material containing these elements as main components. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride (TaN) film and a tungsten (W) film, a tungsten nitride (WN) film and a tungsten film, a molybdenum nitride (MoN) film and molybdenum ( Mo) film etc. are mentioned. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. Further, instead of the two-layer structure including the first conductive film and the second conductive film, a single-layer structure or a three-layer structure may be employed. In the case of using a single-layer structure or a three-layer structure, a material similar to the above-described first conductive film and second conductive film can be freely selected as a conductive film material.

  Next, a resist mask is formed using a photolithography method, and etching treatment for forming a gate electrode and a gate line is performed, so that conductive films 716 to 725 functioning as the gate electrode (hereinafter, referred to in this specification) Sometimes referred to as “gate electrode”).

  Next, after forming a resist mask by photolithography, an impurity element imparting N-type is added to the crystalline semiconductor films 706 and 708 to 710 at a low concentration by ion doping or ion implantation. . In this manner, N-type impurity regions 711 and 713 to 715 and channel formation regions 780 and 782 to 784 are formed. The impurity element imparting N-type may be an element belonging to Group 15, for example, phosphorus (P) or arsenic (As).

  Next, a resist mask is formed by photolithography, and an impurity element imparting P-type conductivity is added to the crystalline semiconductor film 707 to form a P-type impurity region 712 and a channel formation region 781. For example, boron (B) is used as the impurity element imparting P-type. Note that the order of forming the N-type impurity regions 711 and 713 to 715 and the P-type impurity region 712 is the same as that of the present embodiment, in which the P-type impurity regions 712 are formed after the N-type impurity regions 711 and 713 to 715 are formed. Alternatively, the N-type impurity regions 711 and 713 to 715 may be formed after the P-type impurity region 712 is formed.

  Next, an insulating film is formed so as to cover the gate insulating film 705 and the conductive films 716 to 725. The insulating film is a single layer formed of a film made of an inorganic material such as silicon, an oxide of silicon, or a nitride of silicon, or a film made of an organic material such as an organic resin by various CVD methods such as a sputtering method or a plasma CVD method. Alternatively, they are stacked. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction to form insulating films (also referred to as sidewalls) 739 to 743 that are in contact with the side surfaces of the conductive films 716 to 725 (FIG. 7 (B)). Simultaneously with the formation of the insulating films 739 to 743, insulating films 734 to 738 (hereinafter also referred to as “gate insulating films”) formed by etching the gate insulating film 705 are formed. The insulating films 739 to 743 are used as a mask for doping when an LDD (Lightly Doped Drain) region is formed later.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 706 and 708 to 710 using a resist mask formed by a photolithography method and the insulating films 739 to 743 as masks. N-type impurity regions (also referred to as LDD regions) 727, 729, 731 and 733, and second N-type impurity regions 726, 728, 730 and 732 are formed. The concentration of the impurity element contained in the first N-type impurity regions 727, 729, 731, and 733 is lower than the concentration of the impurity element in the second N-type impurity regions 726, 728, 730, and 732. Through the above steps, N-type thin film transistors 744 and 746 to 748 and a P-type thin film transistor 745 are completed.

  In order to form the LDD region, the gate electrode has a laminated structure of two or more layers, and the gate electrode is subjected to etching having a taper shape or anisotropic etching to form a lower layer constituting the gate electrode. There are a method using a conductive film as a mask and a method using an insulating film on a sidewall as a mask. The thin film transistor formed by employing the former method has a structure in which the LDD region is disposed so as to overlap the gate electrode through the gate insulating film. This structure has a tapered shape in the gate electrode. Since etching and anisotropic etching are used, it is difficult to control the width of the LDD region, and the LDD region may not be formed unless the etching process is performed well. On the other hand, the latter method using the sidewall insulating film as a mask makes it easier to control the width of the LDD region than the former method, and the LDD region can be formed reliably. Note that “etching in which the gate electrode has a tapered shape” means etching in which the side surface of the gate electrode becomes tapered.

After removing the natural oxide film formed on the exposed N-type impurity regions 726, 728, 730, and 732 and the surface of the P-type impurity region 785, a silicide region is appropriately formed using a metal film. Also good. As the metal film, a nickel film, a titanium film, a cobalt film, a platinum film, or a film made of an alloy containing at least two of these elements can be used. More specifically, for example, a nickel film is used as a metal film, and after a nickel film is formed by sputtering at a film formation power of 500 W to 1 kW at room temperature, a silicide region is formed by heat treatment. As the heat treatment, RTA, furnace annealing, or the like can be used. At this time, by controlling the film thickness, heating temperature, and heating time of the metal film, only the surfaces of the N-type impurity regions 726, 728, 730, and 732 and the P-type impurity region 785 can be made silicide regions. The entire surface can be a silicide region. Finally, unreacted nickel is removed. For example, unreacted nickel is removed using an etching solution of HCl: HNO ₃ : H ₂ O = 3: 2: 1.

  Note that in this embodiment, the example in which the thin film transistors 744 to 748 are the top gate type is described, but it is needless to say that each may be a bottom gate type thin film transistor. Further, the single gate structure in which one channel formation region of each of the thin film transistors 744 to 748 is formed has been described, but a double gate structure in which two channel formation regions are formed or a triple gate structure in which three channel formation regions are formed. Also good. Alternatively, a dual gate type or other structure having two gate electrodes disposed above and below the channel formation region with a gate insulating film interposed therebetween may be used.

  The structure of the semiconductor film forming the thin film transistors 744 to 748 may be different from that described in this embodiment. For example, impurity regions (including a source region, a drain region, and an LDD region) are formed. Alternatively, a P channel type, an N channel type, or a CMOS circuit may be formed. In addition, an insulating film (side wall) may be formed so as to be in contact with the side surface of the gate electrode provided above or below the semiconductor film.

  After completing the N-type thin film transistors 744 and 746 to 748 and the P-type thin film transistor 745 through the above steps, the purpose is to restore the crystallinity of the semiconductor film and to activate the impurity element added to the semiconductor film. Heat treatment may be performed.

Next, an insulating film is formed as a single layer or a stacked layer so as to cover the thin film transistors 744 to 748 (FIG. 7C). An insulating film covering the thin film transistors 744 to 748 is formed by an SOG method, a droplet discharge method, or the like, an inorganic material such as silicon oxide or silicon nitride, or an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, or siloxane. Depending on the material or the like, it is formed as a single layer or a laminate. In this specification, siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O), and an organic group containing at least hydrogen (for example, an alkyl group or aromatic hydrocarbon) is used as a substituent. . Further, as a substituent, a fluoro group may be used, or an organic group containing at least hydrogen and a fluoro group may be used. For example, when the insulating film covering the thin film transistors 744 to 748 has a three-layer structure, a film containing silicon oxide as a main component is formed as the first insulating film 749 and a resin is used as the main insulating film 750 in the second layer. A film containing silicon nitride as a main component is preferably formed as the third-layer insulating film 751. In the case where the insulating film covering the thin film transistors 744 to 748 has a single-layer structure, a silicon nitride film or a silicon nitride film containing oxygen is preferably formed. At this time, hydrogen is preferably applied to the surface of the silicon nitride film or the silicon nitride film containing oxygen by performing high-density plasma treatment in an atmosphere containing hydrogen on the silicon nitride film or the silicon nitride film containing oxygen. Make it contain. This is because this hydrogen can be used when a subsequent step of hydrogenating the semiconductor film is performed. Alternatively, the semiconductor film can be hydrogenated by performing high-density plasma treatment in an atmosphere containing hydrogen while heating the substrate at 350 to 450 ° C. Note that as the atmosphere containing hydrogen, a gas in which hydrogen (H ₂ ) or ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) are mixed can be used. In the case where a mixed gas of ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) is used as an atmosphere containing hydrogen, the surface is nitrided simultaneously with hydrogenation of the surfaces of the gate insulating films 734 to 738. You can also.

  Note that before the insulating films 749 to 751 are formed or after one or more thin films of the insulating films 749 to 751 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, a method using a laser, an RTA method, or the like is preferably applied. For example, for the purpose of activating the impurity element, thermal annealing at 500 ° C. or higher may be performed. In addition, when the semiconductor film is to be hydrogenated, thermal annealing at 350 to 450 ° C. may be performed.

  Next, the insulating films 749 to 751 are etched by photolithography to form contact holes that expose the N-type impurity regions 726, 728, 730, and 732, and the P-type impurity region 785. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is patterned to form conductive films 752 to 761 functioning as source or drain wirings.

  The conductive films 752 to 761 are formed using a conductive film containing aluminum (Al) as a main component by various CVD methods such as a sputtering method and a plasma CVD method. The conductive film containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Since a conductive film containing aluminum as a main component generally has a difficulty in heat resistance, it is preferable that a conductive film containing aluminum as a main component be sandwiched between barrier films. A barrier film refers to a film having a function of suppressing hillocks of a conductive film mainly composed of aluminum and improving heat resistance. Materials having such functions include chromium, tantalum, tungsten, molybdenum, titanium, and silicon. , Nickel or a nitride thereof.

As an example of the structure of the conductive films 752 to 761, a structure in which a titanium film, an aluminum film, and a titanium film are sequentially stacked from the substrate side can be given. Since the titanium film is a highly reducing element, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film can be reduced to make good contact with the crystalline semiconductor film. it can. In addition, it is preferable to nitride the surface of the titanium film formed between the crystalline semiconductor film and the aluminum film by performing high-density plasma treatment in an atmosphere containing nitrogen. As the atmosphere containing nitrogen, and _{N 2} or NH _3, mixed gas of a noble gas or a _{N 2} or NH _3, a rare gas, may be used a mixed gas of _{H 2.} By nitriding the surface of the titanium film, it is possible to prevent titanium and aluminum from being alloyed in the subsequent heat treatment process, etc., and to prevent the aluminum from diffusing into the crystalline semiconductor film by breaking through the titanium film. it can. Although an example in which an aluminum film is sandwiched between titanium films has been described here, the same can be said when a chromium film, a tungsten film, or the like is used instead of the titanium film. More preferably, using a multi-chamber apparatus, the titanium film is formed, the titanium film surface is nitrided, the aluminum film is formed, and the titanium film is continuously formed without being exposed to the atmosphere.

  Next, an insulating film 762 is formed so as to cover the conductive films 752 to 761 (FIG. 8A). The insulating film 762 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like. In this embodiment, the insulating film 762 is formed to a thickness of 0.75 to 3 μm.

  Next, the insulating film 762 is etched by photolithography to form a contact hole that exposes the conductive film 761. Subsequently, a conductive film 763 is formed so as to fill the upper surface of the insulating film 762 and the contact hole. Since the conductive film 763 functions as an antenna, it may be hereinafter referred to as “antenna”. Note that the conductive film 763 is not limited to a single layer structure, and may have a stacked structure.

  The shape of the conductive film 763 functioning as an antenna is described. As a signal transmission method in a semiconductor device (RFID tag) having an antenna (conductive film 763) and capable of exchanging contactless data, an electromagnetic coupling method, an electromagnetic induction method, or a microwave method can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be appropriately provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape.

  When a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, an antenna is used in consideration of the wavelength of an electromagnetic wave used for signal transmission. The shape such as the length of the conductive film functioning as a film may be set as appropriate. For example, the conductive film 763 can be formed into a linear shape (for example, a dipole antenna) or a flat shape (for example, a patch antenna). Further, the shape of the conductive film 763 is not limited to a linear shape, and may be a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  Next, a method and a material for forming the conductive film 763 functioning as an antenna will be described. As a method for forming the conductive film 763, a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like can be used. As a material of the conductive film 763, aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum An element selected from (Ta) and molybdenum (Mo), or an alloy material or a compound material containing these elements as main components can be used. Further, fine particles mainly composed of solder (preferably lead-free solder) may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder has the advantage of low cost. Moreover, ceramic, ferrite, or the like can be applied to the antenna.

  For example, when the conductive film 763 is formed using a screen printing method, a conductive paste in which conductive particles having a particle diameter of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selectively printed. Can be provided. As the conductive particles, silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), and titanium (Ti) 1) or more metal particles, silver halide fine particles, or dispersible nanoparticles. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins functioning as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film 763, it is preferable to fire after the conductive paste is extruded. For example, in the case where fine particles containing silver as a main component (for example, a particle size of 1 nm to 100 nm) is used as a conductive paste material, the conductive film 763 is formed by baking and curing in a temperature range of 150 to 300 degrees. Can be formed.

  In addition, when an electromagnetic coupling method or an electromagnetic induction method is applied and a semiconductor device having an antenna (RFID tag) is provided in contact with a metal, a magnetic permeability is provided between the semiconductor device and the metal. It is preferable to provide a magnetic material. When a semiconductor device including an antenna is provided in contact with a metal, an eddy current flows in the metal with a change in the magnetic field, and the change in the magnetic field is weakened by the eddy current, so that a communication distance is reduced. Therefore, by providing a material having magnetic permeability between the semiconductor device and the metal, it is possible to suppress the eddy current of the metal and suppress the decrease in the communication distance. As the magnetic material, ferrite or metal thin film having high magnetic permeability and low high-frequency loss can be used.

  The element layer is completed through the above steps.

  Note that in this embodiment, the structure in which the antenna (conductive film 763) is formed as part of the element layer has been described; however, a base material provided with an antenna is prepared separately, and the base material provided with the antenna Alternatively, a structure in which a substrate provided with an element layer is attached may be used. That is, as illustrated in FIG. 9, a structure in which a base material 781 provided with an antenna 782 and a substrate 701 provided with an element layer are bonded to each other may be employed. In FIG. 9, an anisotropic conductive material is used as a bonding means. The anisotropic conductive material has conductive particles 783 and a fluid, and the fluid becomes an adhesive layer 784 by baking and curing. The conductive film 763 and the antenna 782 can be electrically connected to each other by pressing the conductive particles 783. In other regions, since the conductive particles 783 are kept at a sufficient interval, they are not electrically connected. In addition to the method of bonding using an anisotropic conductive material, a method of bonding metal to metal by ultrasonic waves (referred to as “ultrasonic bonding”), an ultraviolet curable resin, a double-sided tape, or the like is used. Can also be used. In FIG. 9, the conductive film 763 functions as a wiring for electrically connecting the antenna 782 and the thin film transistor.

  Next, an insulating film 772 is formed by an SOG method, a droplet discharge method, or the like so as to cover the conductive film 763 functioning as an antenna (FIG. 8B). The insulating film 772 functions as a protective layer for ensuring the strength of the element layer. The insulating film 772 is preferably formed so as to cover the base film 703 and the side surfaces of the element layer. In this embodiment, the insulating film 772 is provided over the entire surface so as to cover the base film 703 and the element layer. However, the insulating film 772 is not necessarily provided over the entire surface and may be selectively provided. In addition, the present invention can be implemented even when the insulating film 772 is not provided.

  The insulating film 772 is a film containing carbon such as DLC (diamond-like carbon), a silicon oxide film containing nitrogen, a silicon nitride film containing oxygen, a film made of an organic material (for example, a film made of a resin material such as epoxy), or the like. What is necessary is just to form using. As a method for forming the insulating film 772, various CVD methods such as a sputtering method and a plasma CVD method, a spin coating method, a droplet discharge method, or a screen printing method can be used.

  Thereafter, the method described in Embodiment 1 or 2 may be applied to the step after the formation of the insulating film 772 (protective layer). That is, after part of the element layer and the insulating film 772 is etched to form an opening, the stacked body including the part of the element layer and the insulating film 772 is peeled from the substrate, and the adhesive layer and the base material are provided. The laminated body is sealed using the laminated film 1 and the second laminated film, and the adhesive layer may be sealed with the first base material and the second base material. In this way, the semiconductor device is completed.

  This example can be freely combined with the above embodiment mode. That is, the material and the formation method described in the above embodiment can be used in this embodiment, and the material and the formation method described in this embodiment can be used in the above embodiment.

  In this embodiment, a substrate provided with antennas of various shapes and a chip having an integrated circuit (hereinafter referred to as “chip”) are connected, and the substrate and the chip are sealed using a laminated film. The structure of the stopped semiconductor device will be described.

  A structure of a semiconductor device in which a dipole antenna is used as one of shapes that the antenna can take will be described with reference to FIGS. 10A is a top view of the semiconductor device, and FIG. 10B is a cross-sectional view taken along line AB in FIG. 10A.

  A chip 150 provided with an integrated circuit is electrically connected to a dipole antenna 151 provided on a base material 152. The dipole antenna 151 is connected to the active layer of the thin film transistor through a first conductive film 161, a second conductive film 162, and conductive particles 163, for example, as shown in FIG. The chip 150 and the base material 152 provided with the dipole antenna 151 are bonded using an anisotropic conductive material having conductive particles 163 and a fluid. The fluid becomes the adhesive layer 164 by baking and curing. Note that a method of electrically connecting the chip 150 and the dipole antenna 151 is not limited to a method using an anisotropic conductive material, and a method using a conductive adhesive or a TAB (Tape Automated Bonding) method is used. Also good.

  In this embodiment, as shown in FIG. 10B, the dipole antenna 151 bonded to the base material 152 only on one surface is used. However, the other surface of the dipole antenna 151 (where the chip 150 is electrically connected) And those whose side surfaces are also bonded to the base material, that is, those where the region other than the portion that conducts with the chip 150 is not exposed to the outside can also be used.

  The chip 150 and the base material 152 are sealed using two laminated films. As the sealing method, the method described in Embodiment Mode 1 or Embodiment Mode 2 may be used. In this way, the chip 150 and the base material 152 are sealed by the base material 154 through the adhesive layer 153. In the semiconductor device manufactured using the present invention, not only the chip 150 but also the adhesive layer 153 bonded to the chip 150 is sealed with the base material 154, so that a substance that causes moisture or contamination enters. It is excellent in chemical and physical strength and environmental resistance.

  A structure of a semiconductor device in which a loop antenna is used as one of shapes that the antenna can take will be described with reference to FIGS. 11A is a top view of the semiconductor device, and FIG. 11B is a cross-sectional view taken along line AB in FIG. 11A.

  The chip 250 provided with the integrated circuit is electrically connected to a loop antenna 251 provided on the base material 252. The chip 250 and the base material 252 are sealed using two laminated films. As the sealing method, the method described in Embodiment Mode 1 or Embodiment Mode 2 may be used. In this manner, the chip 250 and the base material 252 are sealed by the base material 254 with the adhesive layer 253 interposed therebetween. In the semiconductor device manufactured using the present invention, not only the chip 250 but also the adhesive layer 253 bonded to the chip 250 is sealed by the base material 254, so that a substance that causes moisture or contamination enters. It is excellent in chemical and physical strength and environmental resistance.

  A structure of a semiconductor device in which a patch antenna is used as one of shapes that the antenna can take will be described with reference to FIGS. 12A is a top view of the semiconductor device, and FIG. 12B is a cross-sectional view taken along line AB in FIG. 12A.

  A chip 350 provided with an integrated circuit is electrically connected to a patch antenna 351 provided on a base material 352. The chip 350 and the base material 352 are sealed using two laminated films. As the sealing method, the method described in Embodiment Mode 1 or Embodiment Mode 2 may be used. In this manner, the chip 350 and the base material 352 are sealed by the base material 354 with the adhesive layer 353 interposed therebetween. In the semiconductor device manufactured using the present invention, not only the chip 350 but also the adhesive layer 353 bonded to the chip 350 is sealed with the base material 354, so that moisture or a substance that causes contamination enters. It is excellent in chemical and physical strength and environmental resistance.

  This embodiment can be freely combined with the above embodiment modes and embodiments. That is, the materials described in the embodiment and examples can be used freely as the base material and the adhesive layer material used in this example.

  In this embodiment, an embodiment in which the semiconductor device of the present invention is used as an RFID tag capable of transmitting and receiving data without contact will be described with reference to FIG.

  The RFID tag 2020 has a function of communicating data without contact, and includes a power supply circuit 2011, a clock generation circuit 2012, a data demodulation / modulation circuit 2013, a control circuit 2014 for controlling other circuits, an interface circuit 2015, a memory 2016, A data bus 2017 and an antenna (antenna coil) 2018 are included (FIG. 13A).

  The power supply circuit 2011 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device, based on the AC signal input from the antenna 2018. The clock generation circuit 2012 is a circuit that generates various clock signals to be supplied to each circuit in the semiconductor device based on the AC signal input from the antenna 2018. The data demodulation / modulation circuit 2013 has a function of demodulating / modulating data communicated with the reader / writer 2019. The control circuit 2014 has a function of controlling the memory 2016. The antenna 2018 has a function of transmitting and receiving electromagnetic waves. The reader / writer 2019 controls communication with the semiconductor device, control, and processing related to the data. Note that the RFID tag is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and cryptographic processing dedicated hardware are added.

  In addition, the RFID tag may be of a type that supplies power to each circuit by radio waves without using a power source (battery), or a type that uses a power source (battery) without using radio waves. The power supply voltage may be supplied to each circuit by radio waves and a power supply.

  When the semiconductor device of the present invention is used for an RFID tag or the like, the point of performing contactless communication, the point that multiple reading is possible, the point that data can be written, the point that it can be processed into various shapes, and the selection Depending on the frequency to be used, there are advantages such as wide directivity and wide recognition range. RFID tags can be used for IC tags that can identify individual information about people and objects by wireless communication without contact, labels that can be attached to target objects by label processing, wristbands for events and amusements, etc. Can be applied. Further, the RFID tag may be molded using a resin material, or may be directly fixed to a metal that hinders wireless communication. Further, the RFID tag can be used for system operations such as an entrance / exit management system, a payment system, a CD (Compact Disc) or a DVD (Digital Versatile Disc) rental system.

  Next, one mode when the semiconductor device of the present invention is actually used as an RFID tag will be described. A reader / writer 2030 is provided on the side surface of the portable terminal including the display portion 2031, and an RFID tag 2033 is provided on the side surface of the article 2032 (FIG. 13B). The RFID tag 2033 manufactured according to the present invention can suppress intrusion of moisture or a substance that causes contamination, has excellent chemical and physical strength, and excellent environmental resistance. When the reader / writer 2030 is placed over the RFID tag 2033 provided on the product 2032, information about the product such as the description of the product, such as the raw material and origin of the product, the inspection result for each production process, the history of the distribution process, and the like are displayed on the display unit 2031. Is displayed. In addition, when the product 2036 is conveyed by the belt conveyor, the product 2036 can be inspected using the reader / writer 2034 and the RFID tag 2035 provided in the product 2036 (FIG. 13C). The RFID tag 2035 manufactured according to the present invention can suppress intrusion of moisture and substances that cause contamination, has excellent chemical and physical strength, and excellent environmental resistance. In this manner, by using the RFID tag in the system, information can be easily acquired, and high functionality and high added value are realized.

  This embodiment can be freely combined with the above embodiment modes and embodiments.

  The semiconductor device of the present invention can be used as an RFID tag. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These specific examples will be described with reference to FIG. The RFID tag is indicated by 2720 in FIG. The RFID tag manufactured according to the present invention can suppress intrusion of moisture or a substance that causes contamination, has excellent chemical and physical strength, and excellent environmental resistance.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (FIG. 14A). Certificates refer to driver's licenses, resident's cards, etc. (FIG. 14B). Bearer bonds refer to stamps, gift tickets, various gift certificates, etc. (FIG. 14C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (FIG. 14D). Books refer to books, books, and the like (FIG. 14E). The recording media refer to DVD software, video tapes, and the like (FIG. 14F). The vehicles refer to vehicles such as bicycles, ships, and the like (FIG. 14G). Personal belongings refer to bags, glasses, and the like (FIG. 14H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, thin television receivers), cellular phones, and the like.

  Forgery can be prevented by providing RFID tags on bills, coins, securities, certificates, bearer bonds, and the like. In addition, it is possible to improve the efficiency of inspection systems and rental store systems by providing RFID tags for personal items such as packaging containers, books, and recording media, foods, daily necessities, and electronic devices. it can. By providing RFID tags on vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. In addition, by embedding RFID tags in creatures such as animals, individual creatures can be easily identified. For example, by burying an RFID tag in a living creature such as livestock, it is possible to easily identify the year of birth, sex, type, or the like.

  The RFID tag is provided by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

  As described above, the semiconductor device of the present invention can be provided and used for any product. This embodiment can be freely combined with the above embodiment modes and embodiments.

8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 2). FIG. 4 is a diagram showing a usage pattern of a semiconductor device of the present invention (Example 3). FIG. 11 is a diagram showing a usage pattern of a semiconductor device of the present invention (Example 4).

Explanation of symbols

11 Substrate 12 Release layer 13 Element layer 14 Insulating film (protective layer)
15 Opening 16 Film 17 Laminated Body 18 First Base Material 19 Second Base Material 20 Adhesive Layer 21 Third Base Material

Claims (10)

Bonding the first laminated film having the first base material and the first adhesive layer so as to cover one surface of the layer having the element ,
So as to cover the other surface of the layer with the element, sealing the layers having adhered to the element a second laminated film having a second base member and the second adhesive layer,
Cutting the first laminated film and the second laminated film;
By irradiating the cut surface of the first laminated film and the cut surface of the second laminated film exposed by the cutting with laser light , the first base material and the second base material are welded. A method for manufacturing a semiconductor device. Forming a release layer on the substrate,
Forming a layer having an element on the release layer;
Forming an insulating layer on the layer having the element ;
Openings are formed by removing part of the layer and the insulating layer having the element, to form a laminate having a portion of a part and the insulating layer of a layer having the element,
Peeling the laminate from the substrate;
Adhering the first laminated film having the first base material and the first adhesive layer so as to cover one surface of the peeled laminate,
A second laminated film having a second base material and a second adhesive layer is adhered so as to cover the other surface of the peeled laminated body, and the laminated body is sealed,
Cutting the first laminated film and the second laminated film;
By irradiating the cut surface of the first laminated film and the cut surface of the second laminated film exposed by the cutting with laser light , the first base material and the second base material are welded. A method for manufacturing a semiconductor device. Forming a layer having elements on one side of the substrate;
Grinding the other side of the substrate,
Polishing the other ground surface of the substrate;
The layer having the polished substrate and the element is divided to form a laminate having a part of the polished substrate and a part of the layer having the element ,
Adhering the first laminated film having the first base material and the first adhesive layer so as to cover one surface of the laminated body,
A second laminated film having a second base material and a second adhesive layer is adhered and the laminated body is sealed so as to cover the other surface of the laminated body,
Cutting the first laminated film and the second laminated film;
By irradiating the cut surface of the first laminated film and the cut surface of the second laminated film exposed by the cutting with laser light , the first base material and the second base material are welded. A method for manufacturing a semiconductor device. In claim 3,
A method for manufacturing a semiconductor device, wherein the polished substrate has a thickness of 2 μm to 50 μm. In any one of Claims 1 thru | or 4,
A method for manufacturing a semiconductor device, wherein a coating using silicon dioxide is applied between the first base material and the first adhesive layer. In any one of Claims 1 thru | or 5,
A method for manufacturing a semiconductor device, wherein a coating using carbon is applied to a surface of the first base material. In any one of Claims 1 thru | or 6 ,
And irradiating the first cut surface and the laser beam such that the incident angle of 80 degrees or less than 30 degrees with respect to the cut surface of the second laminate film of the laminated film which is exposed by the cutting A method for manufacturing a semiconductor device. In any one of Claims 1 thru | or 7 ,
A method for manufacturing a semiconductor device, wherein an ultraviolet laser, a CO ₂ laser, or a YAG laser is used as the laser light. In any one of Claims 1 thru | or 8 ,
By irradiating the laser beam with respect to the cutting surface and the cutting surface of the second laminated film of the first laminated film, which is exposed by the cutting, the cut surface and the second of said first adhesive layer A method for manufacturing a semiconductor device, wherein a cut surface of an adhesive layer is sealed with the first base material and the second base material. In any one of Claims 1 thru | or 9 ,
The method for manufacturing a semiconductor device is characterized in that the layer including the element includes an antenna.

Images