JP4789322B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4789322B2
JP4789322B2 JP2000400280A JP2000400280A JP4789322B2 JP 4789322 B2 JP4789322 B2 JP 4789322B2 JP 2000400280 A JP2000400280 A JP 2000400280A JP 2000400280 A JP2000400280 A JP 2000400280A JP 4789322 B2 JP4789322 B2 JP 4789322B2
Authority
JP
Japan
Prior art keywords
film
insulating film
forming
amorphous semiconductor
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000400280A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002202734A5 (https=
JP2002202734A (ja
Inventor
最史 藤川
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000400280A priority Critical patent/JP4789322B2/ja
Priority to TW090129340A priority patent/TW525216B/zh
Priority to MYPI20015500A priority patent/MY144716A/en
Priority to SG200400945-2A priority patent/SG147270A1/en
Priority to SG200400836-3A priority patent/SG132505A1/en
Priority to SG200400807-4A priority patent/SG144707A1/en
Priority to SG200107527A priority patent/SG125060A1/en
Priority to SG200502824-6A priority patent/SG155034A1/en
Priority to CNB011431571A priority patent/CN1279576C/zh
Priority to CN201210110904.0A priority patent/CN102646685B/zh
Priority to CN 200810127926 priority patent/CN101604696B/zh
Priority to US10/011,813 priority patent/US6953951B2/en
Priority to KR1020010078043A priority patent/KR100880437B1/ko
Publication of JP2002202734A publication Critical patent/JP2002202734A/ja
Priority to US11/181,923 priority patent/US7459352B2/en
Priority to KR1020080009542A priority patent/KR100871891B1/ko
Publication of JP2002202734A5 publication Critical patent/JP2002202734A5/ja
Priority to US12/323,724 priority patent/US8421135B2/en
Application granted granted Critical
Publication of JP4789322B2 publication Critical patent/JP4789322B2/ja
Priority to US13/792,381 priority patent/US9059216B2/en
Priority to US14/739,159 priority patent/US9666601B2/en
Priority to US15/607,863 priority patent/US10665610B2/en
Priority to US16/881,054 priority patent/US20200286925A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000400280A 2000-12-11 2000-12-28 半導体装置及びその作製方法 Expired - Fee Related JP4789322B2 (ja)

Priority Applications (20)

Application Number Priority Date Filing Date Title
JP2000400280A JP4789322B2 (ja) 2000-12-28 2000-12-28 半導体装置及びその作製方法
TW090129340A TW525216B (en) 2000-12-11 2001-11-27 Semiconductor device, and manufacturing method thereof
MYPI20015500A MY144716A (en) 2000-12-11 2001-12-03 Semiconductor device, and manufacturing method thereof
SG200400836-3A SG132505A1 (en) 2000-12-11 2001-12-05 Semiconductor device, and manufacturing method thereof
SG200400807-4A SG144707A1 (en) 2000-12-11 2001-12-05 Semiconductor device, and manufacturing method thereof
SG200107527A SG125060A1 (en) 2000-12-11 2001-12-05 Semiconductor device, and manufacturing method thereof
SG200502824-6A SG155034A1 (en) 2000-12-11 2001-12-05 Semiconductor device, and manufacturing method thereof
SG200400945-2A SG147270A1 (en) 2000-12-11 2001-12-05 Semiconductor device, and manufacturing method thereof
US10/011,813 US6953951B2 (en) 2000-12-11 2001-12-11 Semiconductor device, and manufacturing method thereof
CN 200810127926 CN101604696B (zh) 2000-12-11 2001-12-11 半导体设备及其制造方法
CNB011431571A CN1279576C (zh) 2000-12-11 2001-12-11 半导体设备及其制造方法
KR1020010078043A KR100880437B1 (ko) 2000-12-11 2001-12-11 반도체장치 및 그의 제조방법
CN201210110904.0A CN102646685B (zh) 2000-12-11 2001-12-11 半导体设备及其制造方法
US11/181,923 US7459352B2 (en) 2000-12-11 2005-07-15 Semiconductor device, and manufacturing method thereof
KR1020080009542A KR100871891B1 (ko) 2000-12-11 2008-01-30 표시장치 및 그의 제조방법
US12/323,724 US8421135B2 (en) 2000-12-11 2008-11-26 Semiconductor device, and manufacturing method thereof
US13/792,381 US9059216B2 (en) 2000-12-11 2013-03-11 Semiconductor device, and manufacturing method thereof
US14/739,159 US9666601B2 (en) 2000-12-11 2015-06-15 Semiconductor device, and manufacturing method thereof
US15/607,863 US10665610B2 (en) 2000-12-11 2017-05-30 Semiconductor device, and manufacturing method thereof
US16/881,054 US20200286925A1 (en) 2000-12-11 2020-05-22 Semiconductor device, and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000400280A JP4789322B2 (ja) 2000-12-28 2000-12-28 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007315900A Division JP4850168B2 (ja) 2007-12-06 2007-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2002202734A JP2002202734A (ja) 2002-07-19
JP2002202734A5 JP2002202734A5 (https=) 2008-01-31
JP4789322B2 true JP4789322B2 (ja) 2011-10-12

Family

ID=18864905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000400280A Expired - Fee Related JP4789322B2 (ja) 2000-12-11 2000-12-28 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP4789322B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
US7045861B2 (en) 2002-03-26 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, liquid-crystal display device and method for manufacturing same
JP4578826B2 (ja) * 2004-02-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4850168B2 (ja) * 2007-12-06 2012-01-11 株式会社半導体エネルギー研究所 半導体装置
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387981B2 (ja) * 1992-10-09 2003-03-17 富士通株式会社 薄膜トランジスタマトリクス装置の製造方法
JPH07110495A (ja) * 1993-10-14 1995-04-25 Hitachi Ltd アクティブマトリクス型液晶表示装置
JPH10319431A (ja) * 1997-05-15 1998-12-04 Advanced Display:Kk 薄膜トランジスタアレイ基板
JP2000131707A (ja) * 1998-10-27 2000-05-12 Citizen Watch Co Ltd 液晶表示パネル
JP3480697B2 (ja) * 1999-05-10 2003-12-22 ナノックス株式会社 Ｃｏｇ型液晶表示装置の製造方法

Also Published As

Publication number Publication date
JP2002202734A (ja) 2002-07-19

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