JP4780943B2 - レーザ照射装置及び半導体装置の作製方法 - Google Patents

レーザ照射装置及び半導体装置の作製方法 Download PDF

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Publication number
JP4780943B2
JP4780943B2 JP2004261235A JP2004261235A JP4780943B2 JP 4780943 B2 JP4780943 B2 JP 4780943B2 JP 2004261235 A JP2004261235 A JP 2004261235A JP 2004261235 A JP2004261235 A JP 2004261235A JP 4780943 B2 JP4780943 B2 JP 4780943B2
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laser
optical system
pulse
laser light
energy distribution
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Japanese (ja)
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JP2005109460A5 (enExample
JP2005109460A (ja
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幸一郎 田中
智昭 森若
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2004261235A 2003-09-09 2004-09-08 レーザ照射装置及び半導体装置の作製方法 Expired - Fee Related JP4780943B2 (ja)

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JP2004261235A JP4780943B2 (ja) 2003-09-09 2004-09-08 レーザ照射装置及び半導体装置の作製方法

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JP2003317049 2003-09-09
JP2003317049 2003-09-09
JP2004261235A JP4780943B2 (ja) 2003-09-09 2004-09-08 レーザ照射装置及び半導体装置の作製方法

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JP2005109460A JP2005109460A (ja) 2005-04-21
JP2005109460A5 JP2005109460A5 (enExample) 2007-10-25
JP4780943B2 true JP4780943B2 (ja) 2011-09-28

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100956339B1 (ko) 2003-02-25 2010-05-06 삼성전자주식회사 규소 결정화 시스템 및 규소 결정화 방법
KR101162575B1 (ko) 2008-01-07 2012-07-05 가부시키가이샤 아이에이치아이 레이저 어닐링 방법 및 장치
US8115137B2 (en) 2008-06-12 2012-02-14 Ihi Corporation Laser annealing method and laser annealing apparatus
JP7057922B2 (ja) * 2017-12-21 2022-04-21 ギガフォトン株式会社 レーザ照射システム
CN114659624B (zh) * 2022-02-24 2025-07-22 北京科益虹源光电技术有限公司 一种激光器能量测量装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179908A (ja) * 1988-01-11 1989-07-18 Fujitsu Ltd レーザビームの強度分布を均一化する方法
JP3116465B2 (ja) * 1991-10-04 2000-12-11 ソニー株式会社 エキシマレーザ光照射装置
JPH10256179A (ja) * 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光の照射装置及びレーザー光の照射方法
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
JP2001028346A (ja) * 1999-07-14 2001-01-30 Sumitomo Heavy Ind Ltd 精密照射用シャッタ機構と制御方法
JP2001257174A (ja) * 2000-03-13 2001-09-21 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法
JP4827305B2 (ja) * 2001-03-16 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100379361B1 (ko) * 2001-05-30 2003-04-07 엘지.필립스 엘시디 주식회사 실리콘막의 결정화 방법

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