JP4777078B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4777078B2
JP4777078B2 JP2006017033A JP2006017033A JP4777078B2 JP 4777078 B2 JP4777078 B2 JP 4777078B2 JP 2006017033 A JP2006017033 A JP 2006017033A JP 2006017033 A JP2006017033 A JP 2006017033A JP 4777078 B2 JP4777078 B2 JP 4777078B2
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Japan
Prior art keywords
layer
line
electrode layer
mask
droplets
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006017033A
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English (en)
Japanese (ja)
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JP2006237586A (ja
JP2006237586A5 (enExample
Inventor
敏行 伊佐
厳 藤井
将文 森末
郁子 川俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006017033A priority Critical patent/JP4777078B2/ja
Publication of JP2006237586A publication Critical patent/JP2006237586A/ja
Publication of JP2006237586A5 publication Critical patent/JP2006237586A5/ja
Application granted granted Critical
Publication of JP4777078B2 publication Critical patent/JP4777078B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006017033A 2005-01-28 2006-01-26 半導体装置の作製方法 Expired - Fee Related JP4777078B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006017033A JP4777078B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005022214 2005-01-28
JP2005022214 2005-01-28
JP2006017033A JP4777078B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006260304A Division JP4777203B2 (ja) 2005-01-28 2006-09-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2006237586A JP2006237586A (ja) 2006-09-07
JP2006237586A5 JP2006237586A5 (enExample) 2010-04-15
JP4777078B2 true JP4777078B2 (ja) 2011-09-21

Family

ID=37044838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006017033A Expired - Fee Related JP4777078B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4777078B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5196870B2 (ja) * 2007-05-23 2013-05-15 キヤノン株式会社 酸化物半導体を用いた電子素子及びその製造方法
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPWO2010038566A1 (ja) * 2008-09-30 2012-03-01 コニカミノルタホールディングス株式会社 薄膜トランジスタおよびその製造方法
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP5422972B2 (ja) * 2008-11-18 2014-02-19 コニカミノルタ株式会社 有機薄膜トランジスタアレイの製造方法、及び有機薄膜トランジスタアレイ
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
WO2011004755A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP3217435A1 (en) * 2009-09-16 2017-09-13 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5683179B2 (ja) * 2009-09-24 2015-03-11 株式会社半導体エネルギー研究所 表示装置の作製方法
CN102648525B (zh) * 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
JP5095865B2 (ja) * 2009-12-21 2012-12-12 シャープ株式会社 アクティブマトリクス基板及びそれを備えた表示パネル、並びにアクティブマトリクス基板の製造方法
KR20120101716A (ko) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP5899606B2 (ja) * 2010-03-04 2016-04-06 株式会社リコー 積層構造体の製造方法
WO2011125806A1 (en) * 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8809928B2 (en) * 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
JP2014060451A (ja) * 2013-12-18 2014-04-03 Semiconductor Energy Lab Co Ltd 発光装置
JP6652124B2 (ja) * 2015-03-02 2020-02-19 コニカミノルタ株式会社 パターン形成方法
CN110767672B (zh) * 2018-08-06 2020-11-17 云谷（固安）科技有限公司 显示面板、显示屏及显示终端
CN110808263B (zh) 2018-08-06 2020-09-22 云谷（固安）科技有限公司 显示面板、显示屏及显示终端
CN110767106B (zh) 2018-09-30 2020-09-08 云谷（固安）科技有限公司 显示面板、显示屏及显示终端
CN110767701B (zh) * 2018-12-29 2022-10-21 昆山国显光电有限公司 Oled阵列基板、显示屏及显示终端

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体

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Publication number Publication date
JP2006237586A (ja) 2006-09-07

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