JP4776767B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4776767B2
JP4776767B2 JP2000327179A JP2000327179A JP4776767B2 JP 4776767 B2 JP4776767 B2 JP 4776767B2 JP 2000327179 A JP2000327179 A JP 2000327179A JP 2000327179 A JP2000327179 A JP 2000327179A JP 4776767 B2 JP4776767 B2 JP 4776767B2
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Japan
Prior art keywords
island
layer
film
semiconductor layer
shaped
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Expired - Fee Related
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JP2000327179A
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English (en)
Japanese (ja)
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JP2001196599A (ja
JP2001196599A5 (enExample
Inventor
律子 河崎
健司 笠原
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000327179A priority Critical patent/JP4776767B2/ja
Publication of JP2001196599A publication Critical patent/JP2001196599A/ja
Publication of JP2001196599A5 publication Critical patent/JP2001196599A5/ja
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Publication of JP4776767B2 publication Critical patent/JP4776767B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000327179A 1999-10-26 2000-10-26 半導体装置の作製方法 Expired - Fee Related JP4776767B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000327179A JP4776767B2 (ja) 1999-10-26 2000-10-26 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999304719 1999-10-26
JP30471999 1999-10-26
JP11-304719 1999-10-26
JP2000327179A JP4776767B2 (ja) 1999-10-26 2000-10-26 半導体装置の作製方法

Publications (3)

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JP2001196599A JP2001196599A (ja) 2001-07-19
JP2001196599A5 JP2001196599A5 (enExample) 2007-12-06
JP4776767B2 true JP4776767B2 (ja) 2011-09-21

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JP2000327179A Expired - Fee Related JP4776767B2 (ja) 1999-10-26 2000-10-26 半導体装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
CN101217150B (zh) 2002-03-05 2011-04-06 株式会社半导体能源研究所 半导体元件和使用半导体元件的半导体装置
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
JP4631250B2 (ja) * 2003-04-22 2011-02-16 セイコーエプソン株式会社 半導体装置の製造方法及び半導体装置、並びにこれを備えた電気光学装置及び電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150840B2 (ja) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2001196599A (ja) 2001-07-19

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