JP4761981B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4761981B2
JP4761981B2 JP2006017052A JP2006017052A JP4761981B2 JP 4761981 B2 JP4761981 B2 JP 4761981B2 JP 2006017052 A JP2006017052 A JP 2006017052A JP 2006017052 A JP2006017052 A JP 2006017052A JP 4761981 B2 JP4761981 B2 JP 4761981B2
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Japan
Prior art keywords
droplets
layer
line
electrode layer
conductive
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JP2006017052A
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Japanese (ja)
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JP2006237587A5 (enExample
JP2006237587A (ja
Inventor
敏行 伊佐
将文 森末
郁子 川俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006017052A priority Critical patent/JP4761981B2/ja
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Publication of JP2006237587A5 publication Critical patent/JP2006237587A5/ja
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Publication of JP4761981B2 publication Critical patent/JP4761981B2/ja
Expired - Fee Related legal-status Critical Current
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006017052A 2005-01-28 2006-01-26 半導体装置の作製方法 Expired - Fee Related JP4761981B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006017052A JP4761981B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005022248 2005-01-28
JP2005022248 2005-01-28
JP2006017052A JP4761981B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006260488A Division JP5171003B2 (ja) 2005-01-28 2006-09-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2006237587A JP2006237587A (ja) 2006-09-07
JP2006237587A5 JP2006237587A5 (enExample) 2006-11-09
JP4761981B2 true JP4761981B2 (ja) 2011-08-31

Family

ID=37044839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006017052A Expired - Fee Related JP4761981B2 (ja) 2005-01-28 2006-01-26 半導体装置の作製方法

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JP (1) JP4761981B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354724B2 (en) 2007-03-26 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5023764B2 (ja) * 2007-03-30 2012-09-12 ブラザー工業株式会社 パターン形成方法及びパターン形成装置。
JP5167685B2 (ja) * 2007-04-25 2013-03-21 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、及び電気光学装置の製造方法
JP5223294B2 (ja) * 2007-10-26 2013-06-26 株式会社リコー 有機薄膜トランジスタの製造方法
JP2009272511A (ja) * 2008-05-09 2009-11-19 Mimaki Engineering Co Ltd 配線形成装置及び配線形成方法
JP4697270B2 (ja) * 2008-07-14 2011-06-08 ソニー株式会社 電子装置およびその製造方法
EP2172977A1 (en) * 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
TWI633371B (zh) * 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
CN102576737B (zh) 2009-10-09 2015-10-21 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20110099422A (ko) * 2010-03-02 2011-09-08 삼성전자주식회사 박막 트랜지스터 및 이의 제조 방법
JP2016201439A (ja) * 2015-04-09 2016-12-01 ソニー株式会社 可撓性デバイス
KR102485787B1 (ko) 2016-12-23 2023-01-09 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 이를 포함하는 표시장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP4742487B2 (ja) * 2003-05-09 2011-08-10 セイコーエプソン株式会社 膜パターン形成方法

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Publication number Publication date
JP2006237587A (ja) 2006-09-07

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