JP4761981B2 - Method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device, an electronic device, and a method for manufacturing the semiconductor device using a printing method.

A thin film transistor (hereinafter also referred to as “TFT”) and an electronic circuit using the thin film transistor are obtained by laminating various thin films such as a semiconductor, an insulator, and a conductor on a substrate and appropriately forming a predetermined pattern by a photolithography technique. It is manufactured. Photolithographic technology is a technology that uses a light to transfer a circuit pattern or other pattern formed on a transparent flat plate called a photomask onto a target substrate. It is widely used in the manufacturing process.

In the manufacturing process using the conventional photolithography technology, a multi-step process such as exposure, development, baking, and peeling is required only for handling a mask pattern formed using a photosensitive organic resin material called a photoresist. Become. Therefore, the manufacturing cost inevitably increases as the number of photolithography processes increases. In order to improve such problems, attempts have been made to manufacture TFTs by reducing the photolithography process (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 11-251259

The present invention reduces the number of photolithography processes in the manufacturing process of a TFT, an electronic circuit using the TFT, a display device formed by the TFT, and a semiconductor device, simplifies the manufacturing process, and increases the size of a side exceeding 1 meter. An object of the present invention is to provide a technology capable of manufacturing a substrate with a large area at a low cost and with a high yield.

It is another object of the present invention to provide a technique capable of forming components such as wirings constituting the semiconductor device and the display device in a complicated and fine shape.

    In the present invention, a conductive layer or a mask layer for forming a conductive layer is applied in several times to a formation region with controlled wettability after being applied in a liquid composition, and then fired, dried, etc. To form a conductive layer or an insulating layer. When the composition is ejected in several times, droplets are not aggregated and a stable pattern shape without disconnection is obtained. The shape of the conductive layer and the insulating layer formed in this manner is such that a droplet discharged later does not stay at the landing position due to the difference in wettability of the formation region, and moves to a region with high wettability. Or it becomes an insulating layer and is stabilized.

  In the present invention, as described above, a continuous conductive layer is formed by a plurality of ejection steps. By the first discharge step, droplets of the composition containing a conductive material adhere to the formation region, and island-shaped first conductive layers are formed on the line at regular intervals. The first conductive layer has a substantially circular shape reflecting the shape of the droplet, and the center thereof exists on the straight first center line. Next, a second discharge step is performed so as to fill the first conductive layer and connect the first conductive layer. Also in the second ejection step, droplets of the composition are ejected on the line at regular intervals in order to form the second conductive layer. At this time, the droplets ejected in the second ejection step are ejected while being shifted so that the center of the droplet does not overlap with the first center line (not coincident). Therefore, the second center line, which is a line connecting the centers of the droplets in the second ejection step, is parallel to the first center line with a certain interval.

    The first center line of the droplet in the first discharge step and the second center line of the droplet in the second discharge step are shifted in parallel with a constant interval, so that the conductive layer to be formed Is a conductive layer having a wavy pattern that is continuously repeated at the side end and meanders to the left and right. Therefore, when viewed from the upper surface, it looks like a zigzag wiring (conductive layer), and at least a part of the wiring is bent, and the side end portion appears to have a wavy shape that swells right and left.

  In addition, the conductive layer (wiring) or the insulating layer formed in the present invention has a portion having a different thickness not only in the side end portion but also in the thickness direction, and the surface has an uneven shape reflecting the shape of the droplet. Have. This is because a liquid composition containing a conductive material or an insulating material is discharged and then solidified by drying or baking to form a conductive layer. The same applies to the mask layer formed by using the present invention, and the mask layer has portions with different film thicknesses and has a concavo-convex shape on the surface. Therefore, a conductive layer or an insulating layer processed using such a mask layer also reflects the shape of the mask layer. The shape and size of the irregular shape on the surface varies depending on the viscosity of the liquid composition, the drying process when the solvent is removed and solidified.

  Note that in this specification, a semiconductor device refers to a device that can function by utilizing semiconductor characteristics. By using the present invention, a semiconductor device such as a multilayer wiring layer or a chip having a processor circuit (hereinafter also referred to as a processor chip) can be manufactured.

  The present invention can also be used for a display device that has a display function. The display device using the present invention includes an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”), or an organic substance. And a liquid crystal display device using a liquid crystal element having a liquid crystal material as a display element, and the like.

  One of the semiconductor devices of the present invention includes a wiring having a continuous wavy side end portion, and the wiring includes an organic material.

  One of the semiconductor devices of the present invention has wiring meandering from side to side, and the wiring contains an organic material.

  One embodiment of the semiconductor device of the present invention includes a wiring having periodic wavy side ends, and the wiring includes an organic material.

  One embodiment of the semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the gate electrode layer has a continuous wavy side end portion. .

  One embodiment of the semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the gate electrode layer meanders from side to side.

  One embodiment of a semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the gate electrode layer has a periodic wavy side end portion. Have.

  One embodiment of a semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the source electrode layer and the drain electrode layer are on a continuous wavy shape side. Has an end.

  One embodiment of a semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the source electrode layer and the drain electrode layer meander left and right. .

  One embodiment of the semiconductor device of the present invention includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer, and the source electrode layer and the drain electrode layer have a periodic wavy shape. It has a side end.

  According to one aspect of the semiconductor device of the present invention, the first has a center on a first line in a substrate surface ejected by a first ejection step of a plurality of droplets made of a composition containing a conductive material on a substrate. And a second droplet having a center on a second line having a certain distance from the first line ejected between the first droplets in the second ejection step of the plurality of droplets The wiring includes an organic material.

  In one embodiment of the method for manufacturing a semiconductor device of the present invention, a first discharge step of a plurality of droplets made of a composition containing a conductive material has a center on a first line in a substrate plane. The first droplet is discharged to the center, and the second discharge step of the plurality of droplets causes the first droplet to have a center on the second line having a certain distance from the first line between the first droplets. It is formed by discharging a second droplet.

  In one embodiment of the method for manufacturing a semiconductor device of the present invention, a conductive film is formed over a substrate, and a plurality of droplets made of a composition containing a mask layer material are formed over the conductive film. The first droplet is ejected so as to have a center on the first line, and a plurality of droplets are ejected by a second ejection step so that a certain distance from the first line is maintained between the first droplets. A mask layer is formed by discharging the second droplet so as to have the center on the second line, and the conductive film is processed using the mask layer to form a wiring.

  The wiring and mask layer formed by the above-described method of the present invention have a continuous wavy shape or a periodic wavy side end when viewed from above, or meander.

According to the present invention, components such as wirings constituting a semiconductor device, a display device and the like can be stably formed in a desired shape. Also. There is little loss of material, and cost reduction can be achieved. Therefore, a high-performance and highly reliable semiconductor device and display device can be manufactured with high yield.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
An embodiment of the present invention will be described with reference to FIG.

    The present invention provides at least one or more of components necessary for manufacturing a semiconductor device, a display device, and the like, such as a conductive layer for forming a wiring layer or an electrode, and a mask layer for forming a predetermined pattern. Are formed by a method that can be selectively formed into a desired shape, and a semiconductor device and a display device are manufactured. In the present invention, a component (also referred to as a pattern) refers to a conductive layer such as a wiring layer, a gate electrode layer, a source electrode layer, and a drain electrode layer, a semiconductor layer, a mask layer, an insulating layer, etc. that constitute a thin film transistor or a display device. Including all components formed with a predetermined shape. As a method that can selectively form a desired pattern with a desired pattern, droplets of a composition formulated for a specific purpose are selectively ejected (ejected) to form a conductive layer, insulating layer, etc. in a predetermined pattern A droplet discharge (ejection) method (also called an ink jet method depending on the method) can be used. In addition, a method in which the composition can be transferred or drawn in a desired pattern, for example, various printing methods (screen (stencil) printing, offset (flat plate) printing, letterpress printing, gravure (intaglio printing), etc.) ), A dispenser method, a selective coating method, and the like can also be used.

    In this embodiment, a method is used in which a composition containing a constituent forming material that is a fluid is ejected (ejected) as droplets to form a desired pattern. A droplet containing a component forming material is discharged onto a region where the component is to be formed, and fixed by firing, drying, or the like to form a component having a desired pattern.

    One mode of a droplet discharge apparatus used for the droplet discharge method is shown in FIG. The individual heads 1405 and 1412 of the droplet discharge means 1403 are connected to the control means 1407, which can be drawn in a pre-programmed pattern under the control of the computer 1410. The drawing timing may be performed with reference to a marker 1411 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the imaging means 1404, converted into a digital signal by the image processing means 1409, is recognized by the computer 1410, a control signal is generated, and sent to the control means 1407. As the imaging unit 1404, a charge coupled device (CCD), an image sensor using a complementary metal oxide semiconductor, or the like can be used. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. The heads 1412 can be individually controlled. The material to be discharged is supplied from the material supply source 1413 and the material supply source 1414 to the head 1405 and the head 1412 through piping.

  The inside of the head 1405 has a structure having a space filled with a liquid material as indicated by a dotted line 1406 and a nozzle that is a discharge port. Although not shown, the head 1412 has the same internal structure as the head 1405. When the nozzles of the head 1405 and the head 1412 are provided in different sizes, different materials can be drawn simultaneously with different widths. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is used from multiple nozzles to improve throughput. It is possible to discharge and draw at the same time. In the case of using a large substrate, the head 1405 and the head 1412 can freely scan on the substrate in the direction of the arrow to freely set a drawing area, and a plurality of the same pattern can be drawn on one substrate. it can.

  In the case of forming a conductive layer by using a droplet discharge method, a conductive layer is formed by discharging a composition containing a conductive material processed into a particulate form and fusing or fusion-bonding and solidifying by firing. In such a conductive layer (or insulating layer) formed by discharging and baking a composition containing a conductive material, the conductive layer (or insulating layer) formed by sputtering or the like is mostly a columnar structure. In many cases, a polycrystalline state having many grain boundaries is exhibited.

  The concept of the embodiment of the present invention will be described with reference to FIG. 1 using a method for forming a conductive layer. FIG. 1 is a top view of the conductive layer.

    As shown in FIG. 1, the conductive layer is formed on the substrate 50. Therefore, it is necessary to control the wettability of the surface of the substrate 50, which is a region where the conductive layer is formed, with respect to a liquid composition containing a conductive material forming the conductive layer. The degree of wettability may be set as appropriate depending on the line width and pattern shape of the conductive layer to be formed, and the wettability can be controlled by the following process. In this embodiment, when the conductive layer is formed, the contact angle of the formation region with respect to the composition containing a conductive material is preferably 20 degrees or more, more preferably 20 degrees or more and 40 degrees or less.

    The wettability of the solid surface is affected by the surface condition. When a substance having low wettability is formed with respect to the liquid composition, the surface of the liquid composition becomes a region with low wettability with respect to the liquid composition (hereinafter also referred to as a low wettability region). When a highly wettable substance is formed, the surface thereof becomes a highly wettable region (hereinafter also referred to as a highly wettable region) with respect to the liquid composition. In the present invention, the treatment of controlling the wettability of the surface is to make the adhesion region of the liquid composition suitable for forming a desired shape of the liquid composition.

    The degree of wettability also affects the value of the contact angle. A region where the contact angle of the liquid composition is large is a region with lower wettability (hereinafter also referred to as a low wettability region), and a region with a small contact angle is a region with high wettability (hereinafter also referred to as a high wettability region). It becomes. When the contact angle is large, the liquid composition having fluidity does not spread on the surface of the region and is repelled, so that the surface is not wetted. However, when the contact angle is small, the composition having fluidity spreads on the surface. This is because the surface is often wetted. Therefore, regions having different wettability also have different surface energies. The surface energy of the surface in the region with low wettability is small, and the surface energy at the surface of the region with high wettability is large.

First, a method is shown in which a material with low wettability is formed and control is performed so as to reduce the wettability of the surface of the formation region. As such a low wettability substance, a substance containing a fluorocarbon group (fluorocarbon chain) or a substance containing a silane coupling agent can be used. The silane coupling agent is represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3). Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

Further, as a representative example of the silane coupling agent, wettability can be further reduced by using a fluorine-based silane coupling agent (fluoroalkylsilane (FAS)) having a fluoroalkyl group in R. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. As typical FAS, fluoroalkylsilanes (hereinafter also referred to as FAS) such as heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane. ).

    As the substance having low wettability, a substance having no fluorocarbon chain and having an alkyl group in R of the silane coupling agent can be used. For example, octadecyltrimethoxysilane or the like can be used as the organic silane.

As a solvent of a solution containing a substance having low wettability, n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, Hydrocarbon solvents such as decahydronaphthalene and squalane or tetrahydrofuran are used.

In addition, as an example of a composition that controls wettability to be low and forms a low wettability region, a material having a fluorocarbon chain (fluorine resin) can be used. Examples of fluorine resins include polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), and perfluoroethylene propene copolymer (PFEP; four fluoropolymer). Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene (PCTFE; trifluoroethylene chloride resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodioxide Rukoporima (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin), or the like can be used.

In addition, when an inorganic material or an organic material is treated with CF ₄ plasma or the like, wettability can be reduced. For example, a material obtained by mixing a water-soluble resin such as polyvinyl alcohol (PVA) in a solvent such as H ₂ O as an organic material can be used. Moreover, you may use combining PVA and another water-soluble resin. An organic material (organic resin material) (polyimide, acrylic) or a siloxane material may be used. Note that the siloxane material corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

    In the present embodiment, FAS is formed on the surface of the substrate 50 by spin coating, and the wettability of the surface of the substrate 50 is adjusted. This wettability is with respect to a composition containing a liquid conductive material constituting a conductive layer formed in a later step.

  When the conductive layer is formed, if it is formed by one discharge, the liquid droplets aggregate to form a liquid pool called a bulge, and the conductive layer may be disconnected. In the present invention, the conductive layer is formed by a plurality of ejections. That is, in the first discharge step, a liquid composition containing a conductive material is attached so as to be scattered in a region where the droplets are not in contact with each other. Next, a continuous conductive layer is formed by filling the gap between the conductive material droplets discharged in the first discharge step with the composition containing the conductive material discharged by the second discharge. Since the composition containing the conductive material discharged in the first discharge step has elapsed, it is solidified by drying, and thus does not aggregate with the conductive material in the second discharge step. When a conductive layer is manufactured in this way, a stable conductive layer can be formed regardless of whether it is a thin line.

  A droplet of a composition containing a conductive material is discharged onto a line by using a droplet discharge method as a first discharge step on a substrate 50 whose surface wettability is controlled, and an island-shaped conductive layer 51a, A conductive layer 51b, a conductive layer 51c, a conductive layer 51d, and a conductive layer 51e are formed (see FIG. 1A). The island-like conductive layer 51a, conductive layer 51b, conductive layer 51c, conductive layer 51d, and conductive layer 51e reflect the shape of the droplet, and the line connecting the centers thereof is the first center line Q1-R1. is there.

  Next, as a second ejection step, the conductive layer 51a is formed such that the droplet of the composition containing the conductive material is located at a position where the center of the droplet is shifted from the first center line Q1-R1 by the distance d. The conductive layer 51b, the conductive layer 51c, the conductive layer 51d, and the conductive layer 51e are discharged (see FIG. 1B). The droplets ejected in the second ejection step form the conductive layer 52a, the conductive layer 52b, the conductive layer 52c, and the conductive layer 52d immediately after landing (attachment) on the substrate 50, and the conductive layer 51a, the conductive layer 51b, and the conductive layer are formed. A continuous conductive layer 53 is formed by filling the space between the layer 51c, the conductive layer 51d, and the conductive layer 51e (see FIG. 1C). The line connecting the centers of the droplets ejected in the second ejection process is the second center line Q2-R2, which is located in parallel with the first center line Q1-R1 with a constant distance d. ing.

    Since the center line of the droplet to be ejected is shifted between the first ejection step and the second ejection step, the conductive layer 53 meanders left and right having a wavy shape continuous to the side end portion 54a and the side end portion 54b. It becomes the shape. The side end has a wavy shape having an amplitude. The meandering range (the range in the line width direction of the conductive layer) is preferably 4 times or less the droplet diameter. Connecting the centers of the conductive layers 51a to 51e discharged in the first discharge step and the conductive layers 52a to 52d discharged in the second discharge step is not a straight line but a line that bends periodically to the left and right. The conductive layer 53 which is the wiring formed in this manner has at least a part that is bent, and has unevenness at the side end. Therefore, when viewed from the upper surface, it looks like a zigzag wiring (conductive layer), and at least a part of the wiring is bent, and the side end portion appears to have a wavy shape that swells right and left. In the present embodiment, the convex portion of the side end portion 54a of the conductive layer 53 and the concave portion of the side end portion 54b correspond to the concave portion of the side end portion 54a and the convex portion of the side end portion 54b across the center line. Therefore, the line width of the conductive layer 53 is substantially constant.

  However, the conductive layer 53 may have a non-uniform line width. The surface of the conductive layer solidified with the composition containing the conductive material discharged in the first discharge step and the surface of the substrate 50 with controlled wettability are wettability with respect to the composition containing the liquid conductive material. Is different. The composition containing the liquid conductive material discharged for the second time is discharged to both of the conductive layer and the surface of the substrate 50 by the first discharge process. A part of the composition containing a liquid conductive material that is greatly affected by the wettability of the surface moves so as to flow onto the conductive layer formed by the discharge in the first discharge step with higher wettability. As a result, the line width of the conductive layer in the region formed by the first discharge process may be increased, and the line width of the conductive layer in the region formed by the second discharge process may be reduced. In such a case, a conductive layer having a nonuniform line width and a periodically changing line width may be formed.

  When the conductive layer having a wavy shape is formed adjacent to the side end portion, meandering left and right as described above, if the convex portions are adjacent to each other, the interval between the conductive layers in the convex portion is narrowed, and the concave portions are adjacent to each other. Then, there is a possibility that the gap between the conductive layers in the concave portion becomes narrow and the gap between the conductive layers becomes non-uniform. In addition, it may be difficult to form a finely designed conductive layer and insulating layer at a stable interval, which may cause a problem of shape failure in which the conductive layers come into contact with each other.

    An example in which conductive layers are formed adjacent to each other will be described with reference to FIGS. In this embodiment, as shown in FIG. 2, first, the conductive layers 61a to 61e and the conductive layers 61f to 61j are formed by the first discharge process. At this time, the centers of the droplets of the conductive layers 61a to 61e, which are part of the first conductive layer, and the centers of the conductive layers 61f to 61j, which are parts of the adjacent second conductive layer, are lines. Do not overlap in the width direction. The center of the conductive layer 61f is located between the center of the conductive layer 61a and the center of the conductive layer 61b, preferably in the line width direction of the central region obtained by dividing the center of the conductive layer 61a and the center of the conductive layer 61b into three. To do.

    Next, as shown in FIG. 2B, the conductive layer is formed by the second discharge step of the composition containing a conductive material so as to fill between the conductive layers 61a to 61e formed in the first discharge step. 62a to 62d are formed, and the first conductive layer 63a is formed. Similarly, the conductive layer 62e to the conductive layer 62h are formed by the second discharging step of the composition containing the conductive material so as to fill the space between the conductive layer 61f and the conductive layer 61j, and the second conductive layer 63b is formed. To do. As shown in FIG. 2B, a second line having a center line on the outer side of each of the center lines of the conductive layers 61a to 61e and the center lines of the conductive layers 61f to 61i formed in the first discharge step. Conductive layers 62a to 62d and conductive layers 62e to 62h are formed in the discharging step.

  Then, it solidifies by drying, baking, etc., and the 1st conductive layer 63a and the 2nd conductive layer 63b which have a continuous waveform shape periodically are formed like FIG.2 (C). The first conductive layer 63a and the second conductive layer 63b are formed so that the convex portions are not adjacent to each other and are shifted by the discharge method of the present invention. The distance between the first conductive layer 63a and the second conductive layer 63b is the distance between the center lines in the first discharge process and the second discharge process of the first conductive layer and the second conductive layer, respectively. It can be made narrower than the sum of distances. Therefore, the first conductive layer 63a and the second conductive layer 63b can be stably formed even at a narrow interval. An insulating layer can also be formed by discharging an insulating material in the same manner. Since it can be formed at a uniform interval, fine and accurate processing can be performed by using the mask layer formed in this way. Since a desired shape can be obtained by fine processing, the channel width can be narrowed if this conductive layer is used as a source electrode layer and a drain electrode layer. Therefore, a high-performance and highly reliable semiconductor device capable of high-speed operation can be manufactured. Since defects due to shape defects are reduced at the time of manufacturing, the yield is improved and the productivity is increased.

    In this embodiment mode, the conductive layer 53, the first conductive layer 63a, and the second conductive layer 63b are formed using a droplet discharge unit. The droplet discharge means is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The nozzle diameter of the droplet discharge means is set to 0.02 to 100 μm (preferably 0.02 μm to 30 μm), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl ( Preferably, it is set to 0.1 pl or more and 40 pl or less, more preferably 0.1 pl or more and 10 pl or less. The discharge amount increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably 0.1 to 3 mm (preferably 0.1 mm to 1 mm). Set to the following level.

    A composition in which a conductive material is dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. The conductive material corresponds to fine particles or dispersible nanoparticles of one or more kinds of metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al. Further, the conductive material is mixed with metal sulfides of Cd and Zn, oxides such as Fe, Ti, Ge, Si, Zr, and Ba, one or more kinds of fine particles of silver halide, or dispersible nanoparticles. May be. As the conductive material, indium tin oxide (ITO) used as a transparent conductive film, indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide, titanium nitride, or the like may be used. . As the conductive material, particles of a single element or a plurality of kinds of elements can be mixed and used. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

  The composition to be discharged is obtained by dissolving or dispersing a conductive material in a solvent, but may contain a dispersant or a thermosetting resin called a binder. In particular, the binder has a function of preventing the occurrence of cracks and unevenness in the fused state during firing. Thus, the formed conductive layer may contain an organic material. The organic material contained varies depending on the heating temperature, atmosphere, and time. This organic material is an organic resin that functions as a binder of metal particles, a solvent, a dispersant, and a coating agent. Typically, a polyimide resin, an acrylic resin, a novolac resin, a melamine resin, a phenol resin, an epoxy resin, Organic resins such as silicon resin, furan resin and diallyl phthalate resin can be used.

    Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone, and water are used. The viscosity of the composition is preferably 20 mPa · s or less, in order to prevent drying during discharge or to allow the composition to be smoothly discharged from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 20 mPa · s, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · s, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 5 to 20 mPa · s.

    The conductive layer may be formed by stacking a plurality of conductive materials. Alternatively, first, silver may be used as a conductive material, and a conductive layer may be formed by a droplet discharge method, followed by plating with copper or the like. Plating may be performed by electroplating or chemical (electroless) plating. Plating may be performed by immersing the substrate surface in a container filled with a solution having a plating material. However, the substrate is placed at an angle (or vertically) and a solution having a material to be plated is allowed to flow over the substrate surface. It may be applied as follows. When plating is performed such that the solution is applied while standing the substrate, there is an advantage that the apparatus used in the process can be downsized even if the substrate is a large area.

    Although it depends on the diameter of each nozzle and the pattern shape of the desired conductive layer, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. A diameter of 0.1 μm or less is preferable. The particles of the conductive material in the composition are formed by a method such as an electrolytic method, an atomizing method, or a wet reduction method, and the particle size is generally about 0.01 to 10 μm. However, when formed by a gas evaporation method, the nanoparticles protected by the dispersant are as fine as about 7 nm, and these nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

    The step of discharging the liquid composition may be performed under reduced pressure. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. After discharging the composition, one or both steps of drying and baking are performed. The drying and firing steps are both heat treatment steps. For example, drying is performed at 100 degrees (C) for 3 minutes, and firing is performed at 200 to 550 degrees (C) for 15 minutes to 60 minutes. Its purpose, temperature and time are different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. Note that the timing of performing this heat treatment and the number of heat treatments are not particularly limited. In order to carry out the drying and firing steps satisfactorily, the substrate may be heated, and the temperature at that time depends on the material such as the substrate, but is generally 100 to 800 ° C. (° C.) ( Preferably, it is 200 to 550 degrees (° C.). By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to bring the nanoparticles into contact with each other, thereby accelerating fusion and fusion.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG, YVO ₄ , and GdVO ₄ doped with Cr, Nd, or the like. . Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. Further, a laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds so as not to destroy the substrate. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that irradiates ultraviolet light or infrared light in an inert gas atmosphere, and rapidly raises the temperature for several minutes to several microseconds. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, only the outermost thin film can be heated substantially without affecting the lower layer film. That is, it does not affect a substrate having low heat resistance such as a plastic substrate.

    Alternatively, after the composition is discharged by a droplet discharge method to form a conductive layer, an insulating layer, or the like, the surface may be pressed and flattened by pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed vertically with a flat plate-shaped object. A heating step may be performed when pressing. Alternatively, the surface may be softened or dissolved with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

    According to the present invention, even if the wiring and the like are densely and complicatedly arranged by downsizing and thinning, they can be stably formed in a desired pattern with a good shape, and reliability and productivity can be improved. Can be improved. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable semiconductor device and display device can be manufactured with high yield.

(Embodiment 2)
In this embodiment mode, an example of a display device to which the present invention is applied will be described.

FIG. 6A is a top view illustrating a structure of a display panel according to the present invention. A pixel portion 2701 in which pixels 2702 are arranged in a matrix over a substrate 2700 having an insulating surface, a scanning line side input terminal 2703, a signal A line side input terminal 2704 is formed. The number of pixels may be provided in accordance with various standards. For full color display using XGA and RGB, 1024 × 768 × 3 (RGB), and for full color display using UXGA and RGB, 1600 × 1200. If it corresponds to x3 (RGB) and full spec high vision and is full color display using RGB, it may be 1920 x 1080 x 3 (RGB).

The pixels 2702 are arranged in a matrix by a scan line extending from the scan line side input terminal 2703 and a signal line extending from the signal line side input terminal 2704 intersecting. Each of the pixels 2702 includes a switching element and a pixel electrode connected to the switching element. A typical example of the switching element is a TFT, and the gate electrode of the TFT is connected to the scanning line and the source electrode or the drain electrode is connected to the signal line, so that each pixel is controlled independently by a signal input from the outside. It is possible.

A TFT includes a semiconductor layer, a gate insulating layer, and a gate electrode layer as main components, and a wiring layer connected to a source region and a drain region formed in the semiconductor layer is attached to the TFT. Structurally, the top gate type in which the semiconductor layer, the gate insulating layer and the gate electrode layer are arranged from the substrate side, and the bottom gate type in which the gate electrode layer, the gate insulating layer and the semiconductor layer are arranged from the substrate side are representative. In the present invention, any of those structures may be used.

    As shown in FIG. 6A, a driver IC 2751 for inputting a signal to the scan line and the signal line may be mounted on the substrate 2700 by a COG (Chip on Glass) method. As another mounting mode, a TAB (Tape Automated Bonding) method as shown in FIG. 6B may be used. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate. In FIG. 6, the driver IC 2751 is connected to the FPC 2750.

    In addition, in the case where a TFT provided in a pixel is formed using a polycrystalline (microcrystalline) semiconductor with high crystallinity, a scan line driver circuit can be formed over the substrate. In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor, a single crystal semiconductor, or the like with high mobility, a scan line driver circuit and a signal line driver circuit can be formed over the substrate.

    Embodiments of the present invention will be described with reference to FIGS. More specifically, a method for manufacturing a light-emitting display device having a light-emitting element to which the present invention is applied will be described. FIG. 4 is a top view of the display device pixel portion, and a cross-sectional view taken along line AB in FIG. 4 is shown in FIG. 14A is a top view of the display device, and FIG. 14B is a cross-sectional view taken along line LK (including IJ) in FIG. 14A.

As the substrate 100, a glass substrate made of barium borosilicate glass, alumino borosilicate glass, or the like, a quartz substrate, a metal substrate, or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process is used. Further, polishing may be performed by a CMP method or the like so that the surface of the substrate 100 is planarized. Note that an insulating layer may be formed over the substrate 100. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by a method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 100.

    A gate electrode layer 103 and a gate electrode layer 104 are formed over the substrate 100. The gate electrode layer 103 and the gate electrode layer 104 can be formed by a CVD method, a sputtering method, a droplet discharge method, or the like. The gate electrode layer 103 and the gate electrode layer 104 are composed mainly of an element selected from Ag, Au, Ni, Pt, Pd, Ir, Rh, Ta, W, Ti, Mo, Al, and Cu, or the above elements. What is necessary is just to form with an alloy material or a compound material. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Alternatively, a single-layer structure or a multi-layer structure may be used, for example, a two-layer structure of a tungsten nitride (WN) film and a molybdenum (Mo) film, a tungsten film with a thickness of 50 nm, aluminum with a thickness of 500 nm, and A three-layer structure in which a silicon alloy (Al—Si) film and a titanium nitride film with a thickness of 30 nm are sequentially stacked may be employed. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.

When the gate electrode layer 103 and the gate electrode layer 104 need to be processed, a mask may be formed and processed by dry etching or dry etching. Using an ICP (Inductively Coupled Plasma) etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) are appropriately set. By adjusting, the electrode layer can be etched into a tapered shape. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., a fluorine-based gas typified by CF ₄ , SF _6, NF _3, etc., or O ₂ is appropriately used. be able to.

A mask for processing can be formed by selectively discharging a composition. When the mask is selectively formed in this way, there is an effect that the processing step is simplified. For the mask, a resin material such as an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, permeable polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer Formed by a droplet discharge method using a material or the like. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

    The gate electrode layer 103 and the gate electrode layer 104 may be formed by forming a conductive film and then processing into a desired shape using a mask layer.

Next, the gate insulating layer 114 is formed over the gate electrode layer 103 and the gate electrode layer 104. The gate insulating layer 114 may be formed of a material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer. In this embodiment, a two-layer stack of a silicon nitride film and a silicon oxide film is used. Alternatively, a single layer of silicon oxynitride film or a stack of three or more layers may be used. A silicon nitride film having a dense film quality is preferably used. In addition, when silver or copper is used for a conductive layer formed by a droplet discharge method, if a silicon nitride film or a NiB film is formed thereon as a barrier film, diffusion of impurities can be prevented and the surface can be planarized. is there. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film.

Next, a semiconductor layer is formed. A semiconductor layer having one conductivity type may be formed as necessary. In addition, an n-type semiconductor layer is formed, an n-channel TFT NMOS structure, a p-channel TFT PMOS structure having a p-type semiconductor layer, and an n-channel TFT and p-channel TFT CMOS structure. Can be produced. Further, in order to impart conductivity, an n-channel TFT or a p-channel TFT can be formed by adding an element imparting conductivity by doping and forming an impurity region in the semiconductor layer. Instead of forming an n-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with a PH ₃ gas.

As a material for forming the semiconductor layer, an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor crystallized using energy or thermal energy, a semi-amorphous (also referred to as microcrystal or microcrystal, hereinafter, also referred to as “SAS”) semiconductor, or the like can be used. The semiconductor layer can be formed by various means (a sputtering method, an LPCVD method, a plasma CVD method, or the like).

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. In order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times, the pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or lower, and can be formed even at a substrate heating temperature of 100 to 200 ° C. Here, as an impurity element mainly taken in at the time of film formation, impurities derived from atmospheric components such as oxygen, nitrogen, and carbon are preferably 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 5. It is preferable to be ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor layer.

    A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Of course, as described above, a semi-amorphous semiconductor or a semiconductor including a crystal phase in a part of the semiconductor layer can also be used.

As a semiconductor material, a compound semiconductor such as GaAs, InP, SiC, ZnSe, GaN, or SiGe can be used in addition to a simple substance such as silicon (Si) or germanium (Ge). Zinc oxide (ZnO) can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer may be Y ₂ O _x , Al ₂ O ₃ , TiO ₂ , a stacked layer thereof, or the like. ITO, Au, Ti, or the like is preferably used for the source electrode layer and the drain electrode layer. In addition, In, Ga, or the like can be added to ZnO.

In the case where a crystalline semiconductor layer is used as a semiconductor layer, a crystalline semiconductor layer can be formed by various methods (laser crystallization method, thermal crystallization method, or heat using an element that promotes crystallization such as nickel). A crystallization method or the like may be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the amorphous semiconductor film (for example, an amorphous silicon film) is heated at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous semiconductor film (for example, an amorphous silicon film) with laser light. The concentration of hydrogen contained in the film is preferably reduced to 1 × 10 ²⁰ atoms / cm ³ or less. This is because the amorphous semiconductor film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor layer or inside the amorphous semiconductor layer. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor layer and to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

The crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser light irradiation, or may be performed multiple times by heat treatment or laser light irradiation alone.

    Alternatively, the crystalline semiconductor layer may be directly formed over the substrate by a plasma method. Alternatively, the crystalline semiconductor layer may be selectively formed over the substrate by a plasma method.

As a semiconductor, an organic semiconductor material can be used and formed by a printing method, a dispenser method, a spray method, a spin coating method, a droplet discharge method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. As the organic semiconductor, a low molecular material, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

In addition, as an organic semiconductor material that can be used in the present invention, there is a material that can form a semiconductor layer by processing after forming a soluble precursor. Examples of such an organic semiconductor material include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

When converting the precursor into an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added as well as heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2) -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF), THF (tetrahydrofuran), or the like can be applied.

The semiconductor layer 105 and the semiconductor layer 106 are formed over the gate insulating layer 114. In this embodiment, an amorphous semiconductor layer is crystallized as the semiconductor layer 105 and the semiconductor layer 106 to form a crystalline semiconductor layer. In the crystallization step, an element (also referred to as a catalyst element or a metal element) that promotes crystallization is added to the amorphous semiconductor layer, and crystallization is performed by heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours). As metal elements for promoting crystallization of the semiconductor layer, iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osnium (Os), iridium ( One or a plurality of types selected from Ir), platinum (Pt), copper (Cu), and gold (Au) can be used. In this embodiment, nickel is used.

In order to remove or reduce an element that promotes crystallization from the crystalline semiconductor layer, a semiconductor layer containing an impurity element is formed in contact with the crystalline semiconductor layer and functions as a gettering sink. As the impurity element, an impurity element imparting n-type conductivity, an impurity element imparting p-type conductivity, a rare gas element, or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony (Sb ), Bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton), and Xe (xenon) can be used. In this embodiment, a semiconductor layer containing argon is formed as the semiconductor layer containing an impurity element that functions as a gettering sink. A semiconductor layer containing argon is formed over the crystalline semiconductor layer containing an element that promotes crystallization, and heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours) is performed. The element that promotes crystallization contained in the crystalline semiconductor layer moves into the semiconductor layer containing argon, and the element that promotes crystallization in the crystalline semiconductor layer is removed or reduced. After that, the semiconductor layer containing argon that has become a gettering sink is removed. An n-type semiconductor layer including phosphorus (P) which is an impurity element imparting n-type is formed over the semiconductor layer. The semiconductor layer having n-type functions as a source region and a drain region. In this embodiment, an n-type semiconductor layer is formed using a semi-amorphous semiconductor. The semiconductor layer and the n-type semiconductor layer formed in the above steps are processed into a desired shape, so that the semiconductor layer 105, the semiconductor layer 106, and the n-type semiconductor layer are formed. The n-type semiconductor layer over the semiconductor layer 105 becomes an n-type semiconductor layer 115a and an n-type semiconductor layer 115b by subsequent processing. When a droplet discharge method is used for a semiconductor layer or a mask layer used for processing an n-type semiconductor layer, the shape of the semiconductor layer is reflected in a shape having a wavy shape at a side end portion.

A mask made of an insulator such as resist or polyimide is formed using a droplet discharge method, and a through-hole is formed in a part of the gate insulating layer 114 by etching using the mask, and the mask is disposed on the lower layer side. A part of the gate electrode layer 104 is exposed. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. As an etching gas, a fluorine-based or chlorine-based gas such as CF ₄ , NF ₃ , Cl ₂ , or BCl ₃ may be used, and an inert gas such as He or Ar may be appropriately added. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

A mask used for processing for forming the through hole can also be formed by selectively discharging the composition. When the mask is selectively formed in this way, there is an effect that the processing step is simplified. For the mask, a resin material such as an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, permeable polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer Formed by a droplet discharge method using a material or the like. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

In this embodiment mode, when a mask for processing into a desired shape is formed by a droplet discharge method, it is preferable to control wettability of a formation region as a pretreatment. By controlling the wettability and the droplet diameter at the time of ejection, it can be stably formed in a desired shape (line width or the like). This step can be applied as a pretreatment of any formed material (insulating layer, conductive layer, mask layer, wiring layer, etc.) when a liquid material is used.

    The source or drain electrode layer 107, the source or drain electrode layer 108, the electrode layer 109, the source or drain electrode layer 110, and the source or drain electrode layer 111 are formed over the n-type semiconductor layer. To do.

  In this embodiment, the present invention is applied to the power supply line 112a, the power supply line 112b, and the power supply line 112c. The power supply line 112a, the power supply line 112b, and the power supply line 112c are formed by a droplet discharge method using the method shown in Embodiment Mode 1 and have a shape meandering left and right. This is because the center line of the droplet ejected in the first ejection process and the center line of the droplet ejected in the second ejection process are shifted in the line width direction. Since such a meandering power line can pass a larger current than a linear power line, it can supply a larger amount of power.

    Before forming the power supply line 112a, the power supply line 112b, and the power supply line 112c, the material formed for controlling the wettability of the formation region may leave the remaining material after forming the power supply line. Necessary parts may be removed. The removal may be performed by ashing or etching with oxygen or the like. The power supply line 112a, the power supply line 112b, and the power supply line 112c can also be used as a mask.

After forming the source or drain electrode layer 107, the source or drain electrode layer 108, the electrode layer 109, the source or drain electrode layer 110, and the source or drain electrode layer 111, the semiconductor layer or n-type The semiconductor layer is processed into a desired shape. In this embodiment mode, a mask is formed by a droplet discharge method and processed; however, a semiconductor layer and an n-type semiconductor layer may be processed by etching using the source electrode layer and the drain electrode layer as a mask.

Examples of the conductive material for forming the source or drain electrode layer and the power supply line include Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), and Mo (molybdenum). A composition composed mainly of metal particles can be used. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

In the through-hole formed in the gate insulating layer 114, the source or drain electrode layer 108 and the gate electrode layer 104 are electrically connected. The electrode layer 109 forms a capacitor element.

    By combining the droplet discharge method, material loss can be prevented and costs can be reduced as compared to the entire surface coating formation by spin coating or the like. According to the present invention, wirings and the like can be stably formed even if they are designed to be densely and complicatedly arranged due to downsizing and thinning.

Subsequently, the first electrode layer 113 is formed over the gate insulating layer 114. Light emitted from the light emitting element performs any one of bottom emission, top emission, and dual emission. When light is emitted from the substrate 100 side, the first electrode layer 113 is made of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), and indium zinc oxide containing zinc oxide (ZnO). A predetermined pattern is formed by a composition containing a material (IZO (indium zinc oxide)), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), etc. May be.

Further, it is preferably formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), or the like by a sputtering method. More preferably, indium tin oxide containing silicon oxide formed by a sputtering method using a target containing 2 to 10% by weight of silicon oxide in ITO is used. In addition, a conductive material obtained by doping ZnO with gallium (Ga), and an indium zinc oxide (IZO (IZO) formed using a target in which silicon oxide is included and indium oxide is mixed with 2 to 20 wt% zinc oxide (ZnO). indium zinc oxide)) film may be used. After the first electrode layer 113 is formed by a sputtering method, a mask layer may be formed by a droplet discharge method and formed into a desired pattern by etching. In this embodiment, the first electrode layer 113 is formed using a light-transmitting conductive material by a droplet discharge method, and specifically includes indium tin oxide, ITO, and silicon oxide. It is formed using ITSO.

The first electrode layer 113 can also be selectively formed over the gate insulating layer 114 before the source or drain electrode layer 111 is formed. In this case, in this embodiment mode, the connection structure of the source or drain electrode layer 111 and the first electrode layer 113 is a structure in which the source or drain electrode layer 111 is stacked on the first electrode layer. It becomes. When the first electrode layer 113 is formed before the source electrode layer or the drain electrode layer 111, the first electrode layer 113 can be formed in a flat formation region. Therefore, the first electrode layer 113 can be formed in a flat formation region. .

Alternatively, an insulating layer serving as an interlayer insulating layer may be formed over the source or drain electrode layer 111 and electrically connected to the first electrode layer 113 with a wiring layer. In this case, instead of forming the opening (contact hole) by removing the insulating layer, a material having low wettability with respect to the insulating layer can be formed over the source or drain electrode layer 111. After that, when a composition including an insulating layer is applied by a coating method or the like, the insulating layer is formed in a region excluding a region where a substance having low wettability is formed.

After the insulating layer is solidified by heating, drying, or the like, a substance with low wettability is removed to form an opening. A wiring layer is formed so as to fill the opening, and a first electrode layer 113 is formed so as to be in contact with the wiring layer. When this method is used, there is an effect of simplifying the process because it is not necessary to form an opening by etching.

In addition, when a structure in which emitted light is emitted to the side opposite to the substrate 100 side and a top emission type EL display panel is manufactured, Ag (silver), Au (gold), Cu (copper), A composition containing metal particles such as W (tungsten) or Al (aluminum) as a main component can be used for the first electrode layer 113. As another method, a transparent conductive film or a light reflective conductive film is formed by a sputtering method, a mask pattern is formed by a droplet discharge method, and the first electrode layer 113 is formed by combining etching processes. Also good.

The first electrode layer 113 may be wiped with a CMP method or a polyvinyl alcohol-based porous material and polished so that the surface thereof is planarized. Further, after polishing using the CMP method, the surface of the first electrode layer 113 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

  Through the above process, a TFT substrate for a display panel in which the bottom gate TFT and the first electrode layer 113 are connected to the substrate 100 is completed. The TFT of this embodiment mode is an inverted stagger type.

Next, an insulating layer 121 (also referred to as a partition wall or a bank) is selectively formed. The insulating layer 121 is formed over the first electrode layer 113 so as to have an opening. In this embodiment mode, the insulating layer 121 is formed over the entire surface, and is etched into a desired shape using a mask such as a resist. When the insulating layer 121 is formed by a droplet discharge method, a printing method, a dispenser method, or the like that can be directly and selectively formed, the etching process is not necessarily required. The insulating layer 121 can also be formed in a desired shape by the pretreatment of the present invention.

The insulating layer 121 is formed using silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or other inorganic insulating materials, acrylic acid, methacrylic acid, and derivatives thereof, polyimide, aromatic, or aromatic. Bonded to heat-resistant polymers such as polyamide, polybenzimidazole, or inorganic siloxanes containing Si-O-Si bonds among silicon, oxygen, and hydrogen compounds formed from siloxane-based materials as starting materials It can be formed of an organic siloxane insulating material in which hydrogen is substituted with an organic group such as methyl or phenyl. You may form using photosensitive and non-photosensitive materials, such as an acryl and a polyimide. The insulating layer 121 preferably has a shape in which the radius of curvature continuously changes, and the coverage of the electroluminescent layer 122 and the second electrode layer 123 formed thereon is improved.

Alternatively, after the insulating layer 121 is formed by discharging a composition by a droplet discharge method, the surface may be pressed and flattened by pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed vertically with a flat plate-like object. Alternatively, the surface may be softened or dissolved with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method. When flatness is improved by this step, display unevenness of the display panel can be prevented and a high-definition image can be displayed.

A light emitting element is formed over a substrate 100 which is a TFT substrate for a display panel.

Before forming the electroluminescent layer 122, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in the first electrode layer 113 and the insulating layer 121 or on the surface thereof. In addition, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 122 by vacuum deposition or droplet discharge under reduced pressure without being exposed to the air as it is. .

As the electroluminescent layer 122, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask or the like. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied. A second electrode layer 123 is stacked over the electroluminescent layer 122 to complete a display device having a display function using a light emitting element. The luminescence may be luminescence (fluorescence) when returning from the singlet excited state to the ground state, or luminescence (phosphorescence) when returning from the triplet excited state to the ground state. (Phosphorescence) The latter two colors may be a combination of phosphorescence (or fluorescence). Phosphorescence may be used only for R, and fluorescence may be used for G and B. Specifically, a laminated structure in which a 20 nm thick copper phthalocyanine (CuPc) film is provided as a hole injection layer and a 70 nm thick tris-8-quinolinolato aluminum complex (Alq ₃ ) film is provided thereon as a light emitting layer. It is good. Quinacridone Alq _3, it is possible to control the luminescent color by adding a fluorescent dye such as perylene or DCM1.

  However, the above example is an example of an organic light emitting material that can be used as an electroluminescent layer, and is not necessarily limited to this. As a material for the electroluminescent layer, an organic material (including a low molecule or a polymer), a composite material of an organic material and an inorganic material, or the like can be used. An electroluminescent layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, although an example in which a low molecular weight organic light emitting material is used as a light emitting layer is described in this embodiment mode, a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer.

Although not shown, it is effective to provide a passivation film so as to cover the second electrode layer 123. The protective film provided when forming the display device may have a single layer structure or a multilayer structure. As the passivation film, silicon nitride (SiN), silicon oxide (SiO ₂ ), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), nitrogen content is oxygen An insulating film containing aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), or nitrogen-containing carbon (CN _X ) having a content higher than the content, or a single layer or a combination of the insulating films can be used. . For example, a laminate such as a nitrogen-containing carbon film (CN _x ) or silicon nitride (SiN), or an organic material can be used, and a laminate of polymers such as a styrene polymer may be used. A siloxane material may also be used.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the electroluminescent layer having low heat resistance. The DLC film is formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, a hot filament CVD method, etc.), a combustion flame method, a sputtering method, or an ion beam evaporation method. It can be formed by laser vapor deposition. The reaction gas used for film formation was hydrogen gas and a hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as reaction gases. The DLC film has a high blocking effect against oxygen and can suppress oxidation of the electroluminescent layer. Therefore, the problem that the electroluminescent layer is oxidized during the subsequent sealing process can be prevented.

As shown in FIG. 14B, a sealant 136 is formed and sealed with a sealing substrate 140. After that, a flexible wiring board may be connected to a gate wiring layer formed by being electrically connected to the gate electrode layer 103 to be electrically connected to the outside. The same applies to the source wiring layer formed in electrical connection with the source or drain electrode layer 107.

    A filler 135 is sealed between the substrate 100 having elements and the sealing substrate 140 for sealing. A dripping method can be used to enclose the filler as in the case of the liquid crystal material. Instead of the filler 135, an inert gas such as nitrogen may be filled. Further, by installing the desiccant in the display device, the light emitting element can be prevented from being deteriorated by moisture. The desiccant may be placed on the sealing substrate 140 side or on the substrate 100 side having elements, and may be placed in a region where the sealant 136 is formed with a recess formed in the substrate. In addition, when it is installed in a location corresponding to a region that does not contribute to display, such as a drive circuit region or a wiring region of the sealing substrate 140, the aperture ratio is not lowered even if the desiccant is an opaque substance. The filler 135 may be formed so as to include a hygroscopic material and may have a function of a desiccant. Thus, a display device having a display function using a light-emitting element is completed (see FIG. 14).

Further, an FPC 139 is bonded to a terminal electrode layer 137 for electrically connecting the inside and the outside of the display device with an anisotropic conductive film 138, and the terminal electrode layer 137 and the FPC 139 are electrically connected.

    FIG. 14A shows a top view of a display device. As shown in FIG. 14A, the pixel region 150, the scanning line driving region 151a, the scanning line driving region 151b, and the connection region 153 are sealed between the substrate 100 and the sealing substrate 140 with a sealant 136. A signal line driver circuit 152 formed by an IC driver is provided on the substrate 100. A thin film transistor 133 and a thin film transistor 134 are provided in the driver circuit region, and a thin film transistor 101 and a thin film transistor 102 are provided in the pixel region, respectively.

Note that in this embodiment mode, a case where a light-emitting element is sealed with a glass substrate is shown; however, the sealing process is a process for protecting the light-emitting element from moisture and is mechanically sealed with a cover material. Either a method, a method of encapsulating with a thermosetting resin or an ultraviolet light curable resin, or a method of encapsulating with a thin film having a high barrier ability such as a metal oxide or a nitride is used. As the cover material, glass, ceramics, plastic, or metal can be used. However, when light is emitted from the cover material side, the cover material must be translucent. In addition, the cover material and the substrate on which the light emitting element is formed are bonded together using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. Form. It is also effective to provide a hygroscopic material typified by barium oxide in this sealed space. This hygroscopic material may be provided in contact with the sealing material, or may be provided on the partition wall or in the peripheral portion so as not to block light emitted from the light emitting element. Further, the space between the cover material and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a moisture absorbing material typified by barium oxide in the thermosetting resin or the ultraviolet light curable resin.

In this embodiment mode, the switching TFT has a single gate structure, but a multi-gate structure such as a double gate structure may be used. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, the vicinity of the channel region of the semiconductor layer and the region stacked with the gate electrode layer may be low-concentration impurity regions, and the outer region may be high-concentration impurity regions.

  The present invention can also be applied to thin film transistors. FIG. 16 shows an example in which a thin film transistor is manufactured using the meandering conductive layer as manufactured in Embodiment Mode 1. FIG. 16A illustrates a thin film transistor including a gate electrode layer 401, a semiconductor layer 402, a source or drain electrode layer 403a, and a source or drain electrode layer 403b. In the thin film transistor in FIG. 16A, the present invention is used for the gate electrode layer 401, and the gate electrode layer 401 is a conductive layer having a wavy shape with continuous side edges. Also. FIG. 16B illustrates a thin film transistor including a gate electrode layer 411, a semiconductor layer 412, a source or drain electrode layer 413a, and a source or drain electrode layer 413b. In the thin film transistor in FIG. 16B, the present invention is applied to the source or drain electrode layer 413a and the source or drain electrode layer 413b, and the source or drain electrode layer 413a and the source or drain electrode layer are used. Reference numeral 413b denotes a conductive layer having a wavy shape with continuous side edges. The source or drain electrode layer 413a and the source or drain electrode layer 413b are stably formed with a certain interval. In addition, the present invention can be applied only to the semiconductor layer, or one of the source electrode layer and the drain electrode layer, depending on the characteristics and shape of the thin film transistor required.

As described above, in the present embodiment, various patterns are directly formed on the substrate by using the droplet discharge method, thereby using a glass substrate of the fifth generation or later in which one side exceeds 1000 mm. However, a display panel can be easily manufactured.

According to the present invention, a desired pattern having a necessary function can be stably formed by fine processing. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 3)
An embodiment of the present invention will be described with reference to FIGS. More specifically, a method for manufacturing a display device to which the present invention is applied will be described. 3 is a top view of the display device pixel portion, and FIG. 13B is a cross-sectional view taken along line EF in FIG. 13A is also a top view of the display device, and FIG. 13B is a cross-sectional view taken along line OP (including U-W) in FIG. Note that in this embodiment, an example of a liquid crystal display device using a liquid crystal material as a display element is described. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

As the substrate 200, a glass substrate made of barium borosilicate glass, alumino borosilicate glass, or the like, a quartz substrate, a metal substrate, or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process is used. Note that an insulating layer may be formed over the substrate 200. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by a method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 200.

    A gate electrode layer 202 is formed over the substrate 200. In addition, the capacitor wiring layer 203a, the capacitor wiring layer 203b, and the capacitor wiring layer 203c are formed using meandering conductive layers using the present invention. The gate electrode layer 202 can be formed by a CVD method, a sputtering method, a droplet discharge method, or the like. The material of the gate electrode layer 202, the capacitor wiring layer 203a, the capacitor wiring layer 203b, and the capacitor wiring layer 203c is selected from Ag, Au, Ni, Pt, Pd, Ir, Rh, Ta, W, Ti, Mo, Al, and Cu. These elements may be formed of an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Alternatively, a single layer structure or a multi-layer structure may be used, for example, a two-layer structure of a tungsten nitride (WN) film and a molybdenum (Mo) film, or a tungsten film, an alloy of aluminum and silicon (Al—Si). A three-layer structure in which a film and a titanium nitride film are sequentially stacked may be employed.

    In this embodiment, a mask layer is formed over the conductive film by a droplet discharge method, the conductive film is processed into a desired shape, and the capacitor wiring layer 203a, the capacitor wiring layer 203b, and the capacitor wiring layer 203c are formed. . Therefore, as shown in Embodiment Mode 1, a meandering mask layer is formed. The wettability with respect to the composition containing the mask layer forming material on the surface of the conductive film is controlled. The contact angle of the formation region with respect to the mask layer forming material is preferably 20 degrees or more, more preferably 20 degrees or more and 40 degrees or less. In this embodiment mode, a substance containing a fluorocarbon chain or a substance containing a silane coupling agent is formed to control the wettability of the mask layer formation region.

    The composition containing the mask layer forming material is ejected in two stages by shifting the center line of the droplets by a droplet ejection device, thereby forming a meandering mask layer. The conductive film is processed into a desired shape using the mask layer, so that the capacitor wiring layer 203a, the capacitor wiring layer 203b, and the capacitor wiring layer 203c are formed. More capacity can be obtained by the meandering capacitor wiring layer. In addition, since defects due to shape defects are reduced during production, the yield is improved and the productivity is increased. Therefore, when viewed from the top surface, the capacitor wiring layer in this embodiment is like a zigzag wiring (conductive layer), and at least a part of the capacitor wiring layer is bent and has a wavy shape that swells right and left at the side end. Looks like.

    In this embodiment, after the capacitor wiring layer 203a, the capacitor wiring layer 203b, and the capacitor wiring layer 203c are formed, the mask layer is removed, and then ultraviolet rays are irradiated to irradiate a substance containing a fluorocarbon chain, or a silane coupling agent. Decompose and remove substances containing.

A gate insulating layer 208 is formed; a semiconductor layer 204; an n-type semiconductor layer 209a; an n-type semiconductor layer 209b; a source / drain electrode layer 205; a source / drain electrode layer 206; 201 is produced.

A pixel electrode layer 207 is formed in connection with the source or drain electrode layer 206. The pixel electrode layer 207 can be formed using a material similar to that of the first electrode layer 113 in Embodiment 2. When a transmissive liquid crystal display panel is manufactured, indium tin oxide (ITO), silicon oxide is used. It may be formed in a predetermined pattern by a composition containing indium tin oxide (ITSO) containing zinc, zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by baking.

Next, an insulating layer 261 called an alignment film is formed by a printing method, a dispenser method, or a spin coating method so as to cover the pixel electrode layer 207 and the thin film transistor 201. Note that the insulating layer 261 can be selectively formed by a screen printing method or an offset printing method. Then, rubbing is performed. Subsequently, a sealant 282 is formed in a peripheral region where pixels are formed by a droplet discharge method.

    After that, an insulating substrate 263 functioning as an alignment film, a colored layer 264 functioning as a color filter, a conductor layer 265 functioning as a counter electrode, a counter substrate 266 provided with a polarizing plate 267 and a substrate 200 having TFTs are connected to a spacer 281. And a liquid crystal layer 262 is provided in the gap, whereby a liquid crystal display device can be manufactured. A polarizing plate 268 is also formed on the side of the substrate 200 that does not have a TFT. A filler may be mixed in the sealing material, and a shielding film (black matrix) or the like may be formed on the counter substrate 266. Note that as a method for forming the liquid crystal layer, a dispenser type (dropping type) or a dip type (pumping type) in which liquid crystal is injected using a capillary phenomenon after the counter substrate 266 is bonded can be used.

    The spacer may be provided by dispersing particles of several μm, but in this embodiment, a method of forming a resin film on the entire surface of the substrate and then processing it into a desired shape is adopted. After applying such a spacer material with a spinner, it is formed into a predetermined pattern by exposure and development processing. Further, it is cured by heating at 150 to 200 ° C. in a clean oven or the like. The spacers produced in this way can have different shapes depending on the conditions of exposure and development processing, but preferably, the spacers are columnar and the top is flat, so that the opposite substrate is When combined, the mechanical strength of the liquid crystal display device can be ensured. The shape can be a conical shape, a pyramid shape, or the like, and there is no particular limitation.

A connection portion is formed to connect the inside of the display device formed by the above steps and an external wiring board. The insulator layer in the connection portion is removed by ashing using oxygen gas at or near atmospheric pressure. This treatment is performed using oxygen gas and one or more selected from hydrogen, CF ₄ , NF ₃ , and CHF ₃ . In this step, in order to prevent damage and destruction due to static electricity, ashing is performed after sealing using the counter substrate. However, if there is little influence from static electricity, it may be performed at any timing. .

    Subsequently, an FPC 286 that is a wiring board for connection is provided over the terminal electrode layer 287 electrically connected to the pixel portion with an anisotropic conductive layer 285 interposed therebetween (see FIG. 13B). The FPC 286 plays a role of transmitting an external signal or potential. Through the above steps, a liquid crystal display device having a display function can be manufactured.

    FIG. 13A shows a top view of a liquid crystal display device. As shown in FIG. 13A, the pixel region 290, the scan line drive region 291a, and the scan line drive region 291b are sealed between the substrate 200 and the counter substrate 280 by a sealant 282, and are formed on the substrate 200. A signal line driver circuit 292 formed by an IC driver is provided. A driving circuit including a thin film transistor 283 and a thin film transistor 284 is provided in the driving region.

    In the peripheral driver circuit in this embodiment, the thin film transistor 283 is an n-channel thin film transistor, the thin film transistor 284 is a p-channel thin film transistor, and a CMOS circuit including the thin film transistor 283 and the thin film transistor 284 is provided.

    In this embodiment mode, a CMOS structure is used in the drive circuit area to function as an inverter. In the case of the configuration of only PMOS and NMOS, the gate electrode layer and the source electrode layer or drain electrode layer of some TFTs are connected.

    In this embodiment mode, the switching TFT has a single gate structure, but may have a double gate structure or a plurality of multi-gate structures. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, a region near the channel region of the semiconductor layer and a region overlapping with the gate electrode layer may be a low concentration impurity region, and a region outside the region may be a high concentration impurity region.

As described above, in the present embodiment, by forming various conductive layers and insulating layers directly on the substrate using a droplet discharge method, glass of the fifth generation or later in which one side exceeds 1000 mm. Even when a substrate is used, a display panel can be easily manufactured.

  According to the present invention, desired conductive layers and insulating layers having necessary functions can be stably formed by fine processing. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 4)
In this embodiment mode, an example of an IPS (In-Plane-Switching) mode liquid crystal display device to which the present invention is applied is described.

  The liquid crystal display module uses a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, an ASM (Axial Symmetrical Aligned Micro mode, etc.). Can do.

  The IPS mode has excellent viewing angle characteristics because the liquid crystal molecules are rotated in the substrate plane by aligning the liquid crystal molecules substantially parallel to the substrate and generating an electric field parallel to the substrate surface. A top view of the liquid crystal display device of the present embodiment is shown in FIG.

  The liquid crystal display device in FIG. 8 includes a gate electrode layer 401, a common electrode layer 402a, a common electrode layer 402b, a common electrode layer 402c, a semiconductor layer 403, a source or drain electrode layer 404a, a source or drain electrode layer 404b, A thin film transistor 405, a pixel electrode layer 406a, a pixel electrode layer 406b, and a pixel electrode layer 406c are provided.

  The common electrode layer 402a, the common electrode layer 402b, and the common electrode layer 402c are continuously formed, and the pixel electrode layer 406a, the pixel electrode layer 406b, and the pixel electrode layer 406c are also continuously formed. In this embodiment mode, the present invention is used for the common electrode layer and the pixel electrode layer. Therefore, the common electrode layer 402a, the common electrode layer 402b, the common electrode layer 402c, the pixel electrode layer 406a, the pixel electrode layer 406b, and the pixel electrode layer 406c are formed by a droplet discharge method as described in Embodiment 1, and the side The end has a continuous wavy shape.

    When the side end has a continuous wavy shape, the direction of the electric field generated in the vertical direction of the bending point is different, and therefore the direction of rotation of the liquid crystal molecules is different. Therefore, viewing angle characteristics are improved. The wavy shapes of the common electrode layer and the pixel electrode layer of this embodiment can be manufactured by fine processing. Therefore, it is more effective in improving viewing angle characteristics. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 5)
An example of a protection circuit using the present invention will be described.

    As shown in FIG. 6, a protection circuit 2713 can be formed between the external circuit and the internal circuit. The protection circuit is composed of one or more elements selected from a TFT, a diode, a resistance element, a capacitance element, and the like. By providing the protection circuit, a sudden change in potential is prevented and the element is destroyed. Or damage can be prevented and reliability is improved.

    In the protection circuit manufactured in this embodiment, part of the wiring layer is formed in a meandering shape by using the present invention. An example of a wiring layer of the protection circuit manufactured in this embodiment will be described with reference to FIGS.

    7A, 7 </ b> B, and 7 </ b> C are wiring layers meandering and meandering as manufactured in the first embodiment. The wiring layer 301a, the wiring layer 301b, the wiring layer 301c, and the wiring layer 301d in FIG. 7A have meandering shapes and are adjacent to each other with a certain interval as described in Embodiment Mode 1.

    In FIGS. 7B and 7C, the wiring layer 311 and the wiring layer 321 themselves are also uneven in the periphery, have a meandering shape, and are rectangular. When the wiring layer is provided in a rectangular shape, a capacitance is formed between the wiring layers. As shown in FIGS. 7B and 7C, the size of the capacitance can be determined by appropriately controlling the spacing between the wiring layers.

  When the meandering shape and the rectangular shape so that the wiring layer is bent in this way, the resistance of the wiring layer can be increased and the function as a protection circuit is achieved. It is possible to block static electricity and prevent defects in the semiconductor device such as electrostatic breakdown. The protective circuit is not limited to this embodiment mode, and a TFT, a capacitor, a diode, or the like may be used in appropriate combination. The reliability of the semiconductor device is further improved by the protection circuit.

    This embodiment mode can be used in combination with each of Embodiment Modes 1 to 4.

(Embodiment 6)
A television device can be completed with the display device formed according to the present invention. The liquid crystal display module using liquid crystal shown in Embodiment Mode 3 and the EL display module using the EL element shown in Embodiment Mode 2 are assembled in a housing as shown in FIGS. Thus, the television device can be completed. When an EL display module is used, an EL television device can be completed. When a liquid crystal display module is used, a liquid crystal television device can be completed. A main screen 2003 is formed by the display module, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. Thus, a television device can be completed according to the present invention.

A display panel 2002 is incorporated in a housing 2001, and general television broadcasting is received by a receiver 2005, and connected to a wired or wireless communication network via a modem 2004 (one direction (from a sender to a receiver)). ) Or bi-directional (between the sender and the receiver, or between the receivers). The television device can be operated by a switch incorporated in the housing or a separate remote control device 2006, and the remote control device 2006 also includes a display unit 2007 for displaying information to be output. good.

  In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like. In this configuration, the main screen 2003 may be formed using an EL display panel with an excellent viewing angle, and the sub screen may be formed using a liquid crystal display panel that can display with low power consumption. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

FIG. 9B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, a display portion 2011, a remote control device 2012 that is an operation portion, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2011. The television device in FIG. 9B is a wall-hanging type and does not require a large installation space.

  Of course, the present invention is not limited to a television device, but can be applied to various uses such as a monitor for a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

(Embodiment 7)
Various display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices in which these display devices are incorporated in a display portion.

  Such electronic devices include cameras such as video cameras and digital cameras, projectors, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, game machines, personal digital assistants (mobile computers, mobile phones or And an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as Digital Versatile Disc (DVD) and displaying the image). Examples thereof are shown in FIG.

  FIG. 10A illustrates a personal computer, which includes a main body 2101, a housing 2102, a display portion 2103, a keyboard 2104, an external connection port 2105, a pointing mouse 2106, and the like. The present invention is applied to manufacturing the display portion 2103. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

  FIG. 10B shows an image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2201, a housing 2202, a display portion A 2203, a display portion B 2204, and a recording medium (DVD etc.) reading portion 2205. , An operation key 2206, a speaker portion 2207, and the like. The display portion A 2203 mainly displays image information, and the display portion B 2204 mainly displays character information. The present invention is applied to the manufacture of the display portion A 2203 and the display portion B 2204. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

FIG. 10C illustrates a mobile phone, which includes a main body 2301, an audio output portion 2302, an audio input portion 2303, a display portion 2304, operation switches 2305, an antenna 2306, and the like. By applying the display device manufactured according to the present invention to the display portion 2304, a highly reliable and high-quality image can be displayed even in a mobile phone that is downsized and wiring and the like are precise.

  FIG. 10D illustrates a video camera, which includes a main body 2401, a display portion 2402, a housing 2403, an external connection port 2404, a remote control receiving portion 2405, an image receiving portion 2406, a battery 2407, an audio input portion 2408, operation keys 2409, and the like. . The present invention can be applied to the display portion 2402. By applying the display device manufactured according to the present invention to the display portion 2402, a highly reliable and high-quality image can be displayed even with a video camera that is downsized and wiring and the like are precise. This embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 8)
In this embodiment mode, in a chip having a processor circuit such as a wireless chip, a wireless tag, a wireless IC, an RFID, or an IC tag, the antenna according to the present invention is used as an antenna for wirelessly receiving or transmitting data or performing bidirectional transmission / reception. An example using layers is shown.

    FIG. 5A is a perspective view showing one mode of a chip having a processor circuit which is one of the semiconductor devices of the present invention. As the integrated circuit, a processor which is an aggregate having various signal processing functions and a system processor having the processor as a system can be used. Reference numeral 1101 denotes an integrated circuit, 1105 denotes an antenna, and the antenna 1105 is connected to the integrated circuit 1101. Reference numeral 1103 denotes a support that also functions as a cover material, and 1104 corresponds to a cover material. The integrated circuit 1101 and the antenna 1105 are formed over the support 1103, and the cover material 1104 overlaps the support 1103 so as to cover the integrated circuit 1101 and the antenna 1105. Note that the cover material 1104 is not necessarily used, but the mechanical strength of the chip including the processor circuit can be increased by covering the integrated circuit 1101 and the antenna 1105 with the cover material 1104.

As a semiconductor element used for the integrated circuit 1101, a thin film transistor, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, or the like can be used.

  The integrated circuit 1101 has a processor circuit whose reliability is improved without being contaminated by moisture or the like by providing a protective film between the integrated circuit 1101 and the support 1103 and the integrated circuit 1101. A chip can be provided. As the protective film, a film having a barrier function such as a silicon nitride film may be used.

A top view in which the region 1102 in the antenna 1105 is enlarged is illustrated in FIG. In the region 1102, an antenna 1105a, an antenna 1105b, an antenna 1105c, and an antenna 1105d are provided adjacent to each other. These antennas 1105 are manufactured by a droplet discharge method using the method shown in Embodiment Mode 1 and have a shape meandering left and right. This is because the center line of the liquid droplet ejected in the first stage and the center line of the liquid droplet ejected in the second stage are shifted in the line width direction. As shown in Embodiment Mode 1, the adjacent antenna 1105a, antenna 1105b, antenna 1105c, and antenna 1105d can be stably formed in a desired shape at uniform intervals. With the antenna 1105 formed in this manner, a highly reliable semiconductor device can be manufactured without causing poor electrical characteristics due to a defective shape. By forming the antenna by a droplet discharge method, the number of steps can be reduced, and the cost can be reduced accordingly.

The characteristics of the antenna depend on the form of the antenna. The electromotive force generated when the antenna resonates with the reader / writer depends on the frequency, number of turns, area, etc. of the coil of the antenna, and the resonance frequency, which is the frequency when the electromotive force is high, depends on the inductance and capacitance of the coil. . This is because the coil inductance depends on the coil configuration such as the coil size, shape, number of turns, and distance between adjacent coils. When the present invention is used, the shape of the antenna can be processed more finely, so that the degree of freedom and selectivity of the antenna shape are improved. Thus, a semiconductor device having characteristics that match the required function can be manufactured.

In this embodiment mode, an example in which a stacked body including an integrated circuit and an antenna formed over an interlayer insulating film of the integrated circuit is bonded with different cover materials is described; however, the present invention is not limited thereto, and an antenna is formed. The cover material and the integrated circuit may be fixed with an adhesive. At this time, the integrated circuit and the antenna are connected by performing UV treatment or ultrasonic treatment using an anisotropic conductive adhesive or an anisotropic conductive film, but the present invention is not limited to this method, and various Can be used. Further, the antenna is not necessarily equal to the size of the chip having the processor circuit, and may be larger or smaller and may be set as appropriate. For signal transmission / reception, radio waves such as electromagnetic waves and light can be used.

The integrated circuit may be formed directly on the support and covered with a dense film such as silicon nitride as the cover film, or the integrated circuit may be formed by a peeling process and bonded to the support and the cover material. As the support and the cover material, materials having flexibility such as plastic, organic resin, paper, fiber, carbon graphite, and the like can be used. By using a biodegradable resin for the cover material, it is decomposed into bacteria and reduced to the soil. Furthermore, since the integrated circuit of this embodiment is formed using silicon, aluminum, oxygen, nitrogen, or the like, a chip having a pollution-free processor circuit can be formed. Further, by using an incineration-free pollution material such as paper, fiber, carbon graphite or the like for the cover material, it is possible to incinerate or cut a chip having a used processor circuit. Further, a chip having a processor circuit using these materials does not generate toxic gas even if it is incinerated, and is therefore pollution-free.

When the integrated circuit formed by the peeling process is bonded to the support and the cover material, the thickness of the integrated circuit sandwiched between the support and the cover material is 5 μm or less, preferably 0.1 μm to 3 μm. It is good to form like this. Further, when the thickness when the support and the cover material are overlapped is defined as d, the thickness of the support and the cover material is preferably (d / 2) ± 30 μm, more preferably (d / 2) ± 10 μm. And The thickness of the support 1103 and the second cover material is desirably 10 μm to 200 μm. Furthermore, the area of the integrated circuit 1101 is 5 mm square (25 mm ² ) or less, and desirably has an area of 0.3 mm square to 4 mm square (0.09 mm ^{2 to} 16 mm ² ). When the support 1103 and the cover material are formed of an organic resin material, they have a strong characteristic against bending. In addition, an integrated circuit formed by a separation process has stronger resistance to bending than a single crystal semiconductor. Since the integrated circuit, the support, and the cover material can be brought into close contact with each other so that there is no gap, the chip having the completed processor circuit itself has a strong characteristic against bending. Such an integrated circuit surrounded by a support and a cover material may be disposed on the surface or inside of another solid object, or may be embedded in paper.

This embodiment mode can be freely combined with any of Embodiment Modes 1 to 8.
(Embodiment 9)

As described in Embodiment 8, a semiconductor device functioning as a chip having a processor circuit (also referred to as a wireless chip, a wireless processor, a wireless memory, or a wireless tag) can be formed using the present invention. The semiconductor device of the present invention has a wide range of uses. For example, banknotes, coins, securities, certificates, bearer bonds, packaging containers, books, recording media, personal items, vehicles, foods, clothing It can be used in health supplies, daily necessities, medicines and electronic devices.

Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, and the like, and can be provided with a chip 90 having a processor circuit (see FIG. 11A). The certificate refers to a driver's license, a resident's card, and the like, and can be provided with a chip 91 having a processor circuit (see FIG. 11B). The vehicles refer to vehicles such as bicycles, ships, and the like, and can be provided with a chip 97 including a processor circuit (see FIG. 11C). Bearer bonds refer to stamps, gift cards, and various gift certificates. Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like, and can be provided with a chip 93 having a processor circuit (see FIG. 11D). Books refer to books, books, and the like, and can be provided with a chip 94 including a processor circuit (see FIG. 11E). The recording medium refers to DVD software, video tape, or the like, and can be provided with a chip 95 including a processor circuit (see FIG. 11F). Personal belongings refer to bags, glasses, and the like, and can be provided with a chip 96 including a processor circuit (see FIG. 11G). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

    Forgery can be prevented by providing a chip having a processor circuit on bills, coins, securities, certificates, bearer bonds, and the like. In addition, by installing chips with processor circuits in personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, electronic devices, etc., the efficiency of inspection systems and rental store systems can be improved. Can be planned. By providing a chip having a processor circuit to vehicles, health supplies, medicines, and the like, counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicine. As a method for providing a chip having a processor circuit, the chip is provided on the surface of an article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

Further, by applying a chip having a processor circuit that can be formed according to the present invention to an object management or distribution system, the function of the system can be enhanced. For example, by reading information recorded on a chip having a processor circuit provided on a tag with a reader / writer provided on the side of the belt conveyor, information such as a distribution process and a delivery destination is read out. Package distribution can be performed easily.

    In this example, an example in which a mask layer is manufactured using the present invention over a substrate having a surface with controlled wettability is shown.

    Two conductive films to be processed were stacked on the substrate, and a mask layer was formed thereon. Assuming that two parallel conductive layers are formed by processing the conductive film, the mask layer is formed into a desired shape of the conductive layer.

    A glass substrate was used as the substrate, and a first conductive film made of TaN and a second conductive film made of W were laminated. FAS was formed on the second conductive film by a coating method, and the wettability of the formation region of the mask layer was controlled. A liquid composition containing a mask layer forming material was discharged onto the surface of the second conductive film whose wettability was controlled using a droplet discharge method. The substrate was heated and the heating temperature was 45 degrees (° C.). The main component of the composition containing the mask layer forming material is polyimide, and surflon and ethylene glycol-n-monobutyl ether were mixed as a solvent. The droplet diameter immediately after adhering to the droplet formation region was 70 μm, and the overlap of the droplets was 20 μm. An optical micrograph of the prepared mask layer is shown in FIG. As shown in FIG. 15A, a mask layer 83 and a mask layer 84 are formed adjacent to each other.

    A droplet discharge method will be described in detail with reference to FIG. FIG. 15B is a schematic diagram schematically illustrating the formed mask layer and the shape immediately after the droplets are attached to the formation region. The droplet discharge is roughly divided into four stages. As shown in the side of the schematic diagram, the first stage is a circle with an oblique diagonal line on the left, and the second stage is A circle with a diagonal line to the right is shown, the third stage is a circle indicated by a one-dot chain line, and the fourth stage is a circle indicated by a dotted line. A line 85 indicates a line connecting the centers of the droplets discharged in the first stage, a line 86 indicates a line connecting the centers of the droplets discharged in the second stage, and a line 87 is discharged in the third stage. A line connecting the centers of the droplets is shown, and a line 88 shows a line connecting the centers of the droplets discharged in the fourth stage.

    In each stage, the droplets ejected in the same stage are ejected so as not to contact each other. In this embodiment, the interval between droplets ejected at the same stage is 100 μm. In the third stage and the fourth stage, ejection is performed so that the center of the droplet is positioned on each line 87 and line 88 corresponding to the center between the droplets ejected in the first stage and the second stage. did.

    The mask layer 83 and the mask layer 84 are not formed as a continuous mask layer by one discharge, but as a continuous mask layer by a two-step discharge process. In this embodiment, the mask layer 83 is formed by the first-stage and third-stage ejection processes, and the mask layer 84 is formed by the second-stage and fourth-stage ejection processes. The liquid droplet ejected by the first stage ejection process has a center on the line 85, and the liquid droplet ejected by the third stage ejection process has a center on the line 87. Similarly, the droplet ejected by the second stage ejection process has a center on the line 86, and the droplet ejected by the fourth stage ejection process has a center on the line 88. The A line 85 and a line 87 connecting the centers of the droplets ejected in the first stage and the third stage have a constant interval of 15 μm, and both the line 86 and the line 88 have an interval of 15 μm. Therefore, since the center line of the droplet is shifted, the mask layer 83 and the mask layer 84 have a meandering shape having a wavy shape continuous to the side end portion.

    In this embodiment, when forming adjacent mask layers, the droplets are first ejected so that the centers of the droplets are positioned on the lines 85 and 86, and then shifted from the lines 85 and 86 in the line width direction. The liquid droplets are ejected so that the center of the liquid droplet is positioned on the line 87 and the line 88 respectively located at the locations. Accordingly, since the positions of the wavy convex portions and the concave portions at the side end portions of the mask layer 83 and the mask layer 84 are also shifted, the mask layer 83 and the mask layer 84 are formed with an interval without contacting each other. . Therefore, in this example, it was confirmed that a finely processed mask layer could be produced.

  When the first conductive film and the second conductive film are processed using the mask layer 83 and the mask layer 84 as described above, a conductive layer processed into a fine shape with a small interval is formed. can do. Since the distance between the conductive layers can be reduced, the channel width can be reduced by using the conductive layers as a source electrode layer and a drain electrode layer. Therefore, a high-performance and highly reliable semiconductor device capable of high-speed operation can be manufactured. Since defects due to shape defects are reduced at the time of manufacturing, the yield is improved and the productivity is increased.

The conceptual diagram explaining this invention. The conceptual diagram explaining this invention. FIG. 6 is a top view illustrating a display device of the present invention. FIG. 6 is a top view illustrating a display device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. FIG. 6 is a top view illustrating a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 3A and 3B each illustrate a protection circuit using the present invention. FIG. 11 illustrates an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. 1 is a diagram showing a semiconductor device to which the present invention is applied. 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. The experimental data of the sample produced in Example 1. FIG. 6 is a top view illustrating a semiconductor device of the present invention.

Claims (15)

In the first ejection step, a plurality of first droplets made of a composition containing a conductive material are ejected at intervals around the first line,
A composition comprising the conductive material centered around a second line having a constant interval and parallel to the first line between the plurality of first droplets by the second ejection step. By discharging a plurality of second droplets made of an object, a conductive layer in which the plurality of first droplets and the plurality of second droplets meander continuously is formed. A method for manufacturing a semiconductor device. In the first ejection step, a plurality of first droplets made of a composition containing a conductive material are ejected at intervals around the first line,
Drying the plurality of first droplets;
A composition comprising the conductive material centered around a second line having a constant interval and parallel to the first line between the plurality of first droplets by the second ejection step. By discharging a plurality of second droplets made of an object, a conductive layer in which the plurality of first droplets and the plurality of second droplets meander continuously is formed. A method for manufacturing a semiconductor device.   3. The method for manufacturing a semiconductor device according to claim 1, wherein the meandering conductive layer is a pixel electrode used in an IPS mode.   3. The method for manufacturing a semiconductor device according to claim 1, wherein the meandering conductive layer is a common electrode used in an IPS mode. In the first ejection step, a plurality of first droplets made of a composition containing a mask material are ejected onto the conductive film with an interval around the first line,
A composition comprising the mask material centered around a second line having a constant interval and parallel to the first line between the plurality of first droplets by the second ejection step. Forming a mask in which the plurality of first droplets and the plurality of second droplets meander continuously, by discharging a plurality of second droplets comprising:
A method for manufacturing a semiconductor device, wherein the conductive film is processed using the mask to form a wiring. In the first ejection step, a plurality of first droplets made of a composition containing a mask material are ejected onto the conductive film with an interval around the first line,
Drying the plurality of first droplets;
A composition comprising the mask material centered around a second line having a constant interval and parallel to the first line between the plurality of first droplets by the second ejection step. Forming a mask in which the plurality of first droplets and the plurality of second droplets meander continuously, by discharging a plurality of second droplets comprising:
A method for manufacturing a semiconductor device, wherein the conductive film is processed using the mask to form a wiring. According to claim 5 or claim 6, wherein the wiring method for manufacturing a semiconductor device which is a capacitor wiring layer. A gate electrode layer;
A gate insulating layer formed on the gate electrode layer;
A semiconductor layer formed on the gate insulating layer;
A method for manufacturing a semiconductor device having a source electrode layer and a drain electrode layer formed on the semiconductor layer,
In the first ejection step, a plurality of first droplets made of a composition containing a conductive material are ejected at intervals around the first line, and at a certain distance from the first line. And discharging a plurality of second droplets made of a composition containing the conductive material around a second line that is parallel,
In the second ejection step, the conductive material is centered around the third line that is outside and parallel to the first line and the second line between the plurality of first droplets. A plurality of third droplets made of the composition containing the liquid droplets, and between the plurality of second droplets, outside the first line and the second line, By ejecting a plurality of fourth droplets made of the composition containing the conductive material around a fourth line that is different from the line and parallel to the plurality of first droplets, A wiring in which the plurality of third droplets meander continuously and a wiring in which the plurality of second droplets and the plurality of fourth droplets meander are connected to the source electrode. A method for manufacturing a semiconductor device, wherein the semiconductor device is formed as a layer and a drain electrode layer. A gate electrode layer;
A gate insulating layer formed on the gate electrode layer;
A semiconductor layer formed on the gate insulating layer;
A method for manufacturing a semiconductor device having a source electrode layer and a drain electrode layer formed on the semiconductor layer,
After forming a conductive layer on the semiconductor layer,
The first discharge step discharges a plurality of first droplets made of a composition containing a mask material with a space around the first line, and has a constant distance from the first line. And ejecting a plurality of second droplets made of a composition containing the mask material around a second line that is parallel,
In the second ejection step, the mask material is formed between the plurality of first droplets with the third line outside the first line and the second line and being parallel to the center. A plurality of third droplets made of a composition containing the liquid droplets, and between the plurality of second droplets, outside the first line and the second line, and the third line The plurality of first droplets and the plurality of droplets are ejected around a fourth line that is in a different position and parallel to each other, and a plurality of fourth droplets made of the composition containing the mask material are ejected. A first mask in which the third droplets meander continuously and a second mask in which the plurality of second droplets and the plurality of fourth droplets meander continuously Forming,
A method for manufacturing a semiconductor device, wherein the conductive layer is etched using the first mask and the second mask to form the source electrode layer and the drain electrode layer.   10. The method for manufacturing a semiconductor device according to claim 8, wherein the source electrode layer and the drain electrode layer are formed with a certain interval.   The process for controlling wettability with respect to the composition containing the conductive material is performed on a region to which the plurality of first droplets adhere, according to any one of claims 1 to 4 and claim 8. A method for manufacturing a semiconductor device.   12. The wettability with respect to the composition containing the conductive material is controlled in a region where the plurality of second droplets adhere to each other according to any one of claims 1 to 4, 8, and 11. A method for manufacturing a semiconductor device, characterized by performing the processing described above.   The process for controlling wettability with respect to the composition containing the mask material is performed on a region to which the plurality of first droplets adhere, according to any one of claims 5 to 7 and claim 9. A method for manufacturing a semiconductor device.   The wettability with respect to the composition containing the mask material is controlled in a region where the plurality of second droplets adhere to each other according to any one of claims 5 to 7, 9, and 13. A method for manufacturing a semiconductor device, characterized in that treatment is performed.   15. The semiconductor device according to claim 11, wherein a substance having a fluorocarbon group or a substance containing a silane coupling agent is formed as the treatment for controlling the wettability. Manufacturing method.