JP4754918B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4754918B2
JP4754918B2 JP2005281280A JP2005281280A JP4754918B2 JP 4754918 B2 JP4754918 B2 JP 4754918B2 JP 2005281280 A JP2005281280 A JP 2005281280A JP 2005281280 A JP2005281280 A JP 2005281280A JP 4754918 B2 JP4754918 B2 JP 4754918B2
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Japan
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semiconductor
region
film
semiconductor film
insulating film
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Expired - Fee Related
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JP2005281280A
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Japanese (ja)
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JP2006128654A (ja
JP2006128654A5 (enExample
Inventor
舜平 山崎
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005281280A priority Critical patent/JP4754918B2/ja
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Publication of JP2006128654A5 publication Critical patent/JP2006128654A5/ja
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005281280A 2004-09-30 2005-09-28 半導体装置の作製方法 Expired - Fee Related JP4754918B2 (ja)

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JP2005281280A JP4754918B2 (ja) 2004-09-30 2005-09-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004287976 2004-09-30
JP2004287976 2004-09-30
JP2005281280A JP4754918B2 (ja) 2004-09-30 2005-09-28 半導体装置の作製方法

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JP2006128654A JP2006128654A (ja) 2006-05-18
JP2006128654A5 JP2006128654A5 (enExample) 2007-11-08
JP4754918B2 true JP4754918B2 (ja) 2011-08-24

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JP2005281280A Expired - Fee Related JP4754918B2 (ja) 2004-09-30 2005-09-28 半導体装置の作製方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034578A (ja) * 2006-07-28 2008-02-14 Sony Corp 半導体装置およびその製造方法
JP5480554B2 (ja) * 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR102391280B1 (ko) * 2009-03-12 2022-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2449595B1 (en) * 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4101340B2 (ja) * 1997-12-12 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4115583B2 (ja) * 1998-03-27 2008-07-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000353666A (ja) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2006128654A (ja) 2006-05-18

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