JP4749422B2 - 静電的に引きつけられるイオンによるエッチング - Google Patents
静電的に引きつけられるイオンによるエッチング Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 83
- 150000002500 ions Chemical class 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 151
- 239000002184 metal Substances 0.000 claims description 151
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 95
- 229910052710 silicon Inorganic materials 0.000 claims description 95
- 239000010703 silicon Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 6
- 238000001636 atomic emission spectroscopy Methods 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000012320 chlorinating reagent Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 25
- 239000007789 gas Substances 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
金属ビアの製造例
本開示は、図1a〜図1dに関して、シリコン層に高いアスペクト比のビア開口を形成するために使用される製造技術の1つの実施形態について説明する。この製造技術は、支持金属ビア、相互接続金属ビア及び何らかの他の形式のビアを形成するために使用することができる。シリコン層に形成された開口としてビア開口を形成した後、ビア開口のまわりの表面領域を金属化することによって、図1dの支持金属ビア24のようなビアを形成することができる。ビアの外周部は、ビア開口を形成する壁によって形成/画定される。図1a、図1b、図1c、図1dの実施形態は、支持金属ビアの製造に関して記載するが、これらの概念は、図4を参照して記載するような相互接続ビア又はシリコン層内のビア開口に形成される任意の他の金属ビアの製造にも適用可能である。
図1d、図2、図3に関して記載したような支持金属ビア24をエッチングするのに使用されるエッチング技術の実施形態を利用して、図4に関して記載する相互接続金属ビア700をエッチングすることもできる。図1a、図1b、図1c、図1dに関して記載したような支持金属ビア製造の実施形態では、支持金属ビアが形成される犠牲シリコン層は最終的に除去されるが、相互接続金属ビア700を形成するのに使用されるシリコン層は後処理の後にも残る。支持金属ビア24は、反射板に導電性をもたらし、また反射板を物理的に支持する構造要素である。図4の相互接続金属ビア700は、複数の金属層204aと204bの間だけを導通すればよく、代わりにシリコン層によってもたらされる支持体を提供する必要はない。前述のようなプラズマによるエッチングの結果として支持金属ビアがより均一な断面形状を有するビア開口のエッチングの均一性によって、相互接続金属ビアの電気特性の一貫性が高まり予測可能になる。
結論
本発明を構造的特徴及び方法段階に対して固有の文言で説明したが、添付の特許請求の範囲に画定される本発明は、記載した特定の機能又は段階に必ずしも限定されないことを理解されたい。より正確に言うと、開示した特定の機能及び段階は、特許請求の範囲に記載した発明を実施する好ましい形態を表わす。
Claims (19)
- エッチング方法であって、
少なくとも、シリコンを含む第1の層206と、金属を含む第2の層204と、前記第1の層206と前記第2の層204との間に堆積され前記第1の層206のエッチング速度より遅いエッチング速度を有する拡散障壁層220とによって少なくとも部分的に覆われている基板202に、少なくとも第1及び第2のガスを含むプラズマを導き、
前記第1のガスのイオンを前記基板202に向けて静電的に引きつけ、前記第2のガスが、前記第1の層206を前記第2の層204に対して選択的にエッチングし、
前記エッチング速度の変化を検出し、
前記エッチング速度が低下したことを検出したときエッチングを停止することを含む方法。 - 前記第1のガスが少なくとも三塩化ホウ素(BCl3)を含む請求項1に記載の方法。
- 前記第2のガスが、SF6、NF3、CF4、CHF3、C3F8よりなる群から選択されている請求項
1に記載の方法。 - 前記第2のガスがフッ素前駆物質を含む請求項1に記載の方法。
- 前記基板202を接地することをさらに含む請求項1に記載の方法。
- 前記基板202に電気的バイアスを適用することをさらに含む請求項1に記載の方法
- 前記第1のガスが塩素化物質を含む請求項1に記載の方法。
- 前記第2の層204にまで延在する金属ビア24を形成するためにエッチングによって前記
第1の層206に形成された開口212を金属化することをさらに含み、前記シリコンが、前記第2の層と電気的に接触する金属ビア24を形成した後、除去される犠牲シリコンである請求項1に記載の方法。 - 前記第1のガスのイオンを前記基板202に向けて静電的に引きつけることが、エッチングの異方性をもたらす請求項1に記載の方法。
- 前記エッチング速度の変化が光放射分光法によって検出される請求項1に記載の
方法。 - マイクロミラー装置を製造する方法であって、
少なくとも、シリコンを含む第1の層206と、金属を含む第2の層204と、前記第1の層206と前記第2の層204との間に堆積され前記第1の層206のエッチング速度より遅いエッチング速度を有する拡散障壁層220とを有する基板202に少なくとも第1と第2のガスを含むプラズマを導き、
前記基板202に向けて前記第1の層内に前記第1のガスのイオンを静電的に引きつけることによって前記第1の層をエッチングし、前記第2のガスが、前記第1の層206を前記第2の層204に対して選択的にエッチングし、前記第1の層206が、前記第2の層204と電気的に接触する金属ビア24の形成後に除去されるシリコンを含む犠牲層であり、
前記エッチング速度の変化を検出し、
前記エッチング速度が低下したことを検出したときエッチングを停止し、
前記第1の層206を金属化し、エッチングの際に形成された開口212内に、前記第1の層206を貫通して前記第2の層204に接続される金属ビア24を形成し、
前記金属ビア24に物理的に取り付けられる反射板を形成し、前記金属ビア24が、前記第2の層204と前記反射板を物理的に接続して電気的に結合することを含む方法。 - 前記第1のガスが少なくとも三塩化ホウ素(BCl3)を含む請求項11に記載の方法。
- 前記第2のガスが、SF6、NF3、CF4、CHF3、C3F8よりなる群から選択される請求項11に記載の方法。
- 前記エッチング速度の変化が光放射分光法によって検出される請求項11に記載
の方法。 - 前記第2のガスがフッ素前駆物質を含む請求項11に記載の方法。
- 前記基板202を接地することをさらに含む請求項11に記載の方法。
- 前記基板202に電気バイアスを適用することをさらに含む請求項11に記載の方法。
- 前記第1のガスが塩素化物質を有する請求項11に記載の方法。
- 前記基板202に向けて前記第1のガスのイオンを静電的に引きつけることが、エッチングの異方性をもたらす請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/895,733 US7183215B2 (en) | 2004-07-21 | 2004-07-21 | Etching with electrostatically attracted ions |
US10/895,733 | 2004-07-21 | ||
PCT/US2005/023925 WO2006019572A1 (en) | 2004-07-21 | 2005-07-06 | Etching with electrostatically attracted ions |
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JP2008507416A JP2008507416A (ja) | 2008-03-13 |
JP4749422B2 true JP4749422B2 (ja) | 2011-08-17 |
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JP2007522529A Active JP4749422B2 (ja) | 2004-07-21 | 2005-07-06 | 静電的に引きつけられるイオンによるエッチング |
Country Status (6)
Country | Link |
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US (1) | US7183215B2 (ja) |
JP (1) | JP4749422B2 (ja) |
DE (1) | DE112005001713B4 (ja) |
GB (1) | GB2431129B (ja) |
TW (1) | TWI368257B (ja) |
WO (1) | WO2006019572A1 (ja) |
Families Citing this family (5)
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US20060066932A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of selective etching using etch stop layer |
WO2008103632A2 (en) * | 2007-02-20 | 2008-08-28 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
JP2011501874A (ja) * | 2007-09-14 | 2011-01-13 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Mems製造において使用されるエッチングプロセス |
JP5310897B2 (ja) * | 2012-04-02 | 2013-10-09 | 株式会社リコー | 情報処理装置、ソフトウェア更新方法及び記録媒体 |
CN106716636B (zh) | 2014-09-17 | 2021-05-28 | 英特尔公司 | 具有使用穿硅过孔(tsv)的集成麦克风器件的管芯 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01130529A (ja) * | 1987-10-22 | 1989-05-23 | Siemens Ag | チタン/窒化チタン層上のタングステンのもどしエツチング方法 |
JPH0487332A (ja) * | 1990-07-31 | 1992-03-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH0555220A (ja) * | 1991-08-26 | 1993-03-05 | Nec Corp | 半導体装置の製造方法 |
JPH06252106A (ja) * | 1993-03-01 | 1994-09-09 | Hitachi Ltd | 非晶質シリコン膜のドライエッチング方法及び該方法を用いて作製した薄膜トランジスタ |
JPH0888215A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2001059944A (ja) * | 1999-08-23 | 2001-03-06 | Seiko Epson Corp | 光変調デバイス及び表示装置 |
US20040100677A1 (en) * | 2000-12-07 | 2004-05-27 | Reflectivity, Inc., A California Corporation | Spatial light modulators with light blocking/absorbing areas |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2214870B (en) | 1988-02-20 | 1991-09-11 | Stc Plc | Plasma etching process |
US5094712A (en) | 1990-10-09 | 1992-03-10 | Micron Technology, Inc. | One chamber in-situ etch process for oxide and conductive material |
US5176790A (en) | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US5728619A (en) | 1996-03-20 | 1998-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective reactive Ion etch (RIE) method for forming a narrow line-width high aspect ratio via through an integrated circuit layer |
DE19707886C2 (de) | 1997-02-27 | 2003-12-18 | Micronas Semiconductor Holding | Verfahren zum Erzeugen von Kontaktlöchern in einer Halbleiteranordnung |
US6162583A (en) | 1998-03-20 | 2000-12-19 | Industrial Technology Research Institute | Method for making intermetal dielectrics (IMD) on semiconductor integrated circuits using low dielectric constant spin-on polymers |
US6174451B1 (en) | 1998-03-27 | 2001-01-16 | Applied Materials, Inc. | Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons |
WO1999067817A1 (en) * | 1998-06-22 | 1999-12-29 | Applied Materials, Inc. | Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion |
US6217786B1 (en) | 1998-12-31 | 2001-04-17 | Lam Research Corporation | Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry |
US6203715B1 (en) | 1999-01-19 | 2001-03-20 | Daewoo Electronics Co., Ltd. | Method for the manufacture of a thin film actuated mirror array |
US6383938B2 (en) * | 1999-04-21 | 2002-05-07 | Alcatel | Method of anisotropic etching of substrates |
US6656847B1 (en) | 1999-11-01 | 2003-12-02 | Taiwan Semiconductor Manufacturing Company | Method for etching silicon nitride selective to titanium silicide |
US7083997B2 (en) | 2000-08-03 | 2006-08-01 | Analog Devices, Inc. | Bonded wafer optical MEMS process |
US6838452B2 (en) * | 2000-11-24 | 2005-01-04 | Vascular Biogenics Ltd. | Methods employing and compositions containing defined oxidized phospholipids for prevention and treatment of atherosclerosis |
EP1364396A4 (en) | 2001-02-05 | 2005-08-31 | Becton Dickinson Co | MICROVORSPRUNGSARRAY AND METHOD FOR THE PRODUCTION OF A MICROVORPHUNGS |
US20050057792A1 (en) * | 2003-09-12 | 2005-03-17 | Shen-Ping Wang | Method of forming a micromechanical structure |
-
2004
- 2004-07-21 US US10/895,733 patent/US7183215B2/en active Active
-
2005
- 2005-06-21 TW TW094120576A patent/TWI368257B/zh active
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2007
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01130529A (ja) * | 1987-10-22 | 1989-05-23 | Siemens Ag | チタン/窒化チタン層上のタングステンのもどしエツチング方法 |
JPH0487332A (ja) * | 1990-07-31 | 1992-03-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH0555220A (ja) * | 1991-08-26 | 1993-03-05 | Nec Corp | 半導体装置の製造方法 |
JPH06252106A (ja) * | 1993-03-01 | 1994-09-09 | Hitachi Ltd | 非晶質シリコン膜のドライエッチング方法及び該方法を用いて作製した薄膜トランジスタ |
JPH0888215A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2001059944A (ja) * | 1999-08-23 | 2001-03-06 | Seiko Epson Corp | 光変調デバイス及び表示装置 |
US20040100677A1 (en) * | 2000-12-07 | 2004-05-27 | Reflectivity, Inc., A California Corporation | Spatial light modulators with light blocking/absorbing areas |
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TW200605192A (en) | 2006-02-01 |
GB0703252D0 (en) | 2007-03-28 |
GB2431129A (en) | 2007-04-18 |
US7183215B2 (en) | 2007-02-27 |
US20060016784A1 (en) | 2006-01-26 |
GB2431129B (en) | 2009-08-12 |
WO2006019572A1 (en) | 2006-02-23 |
TWI368257B (en) | 2012-07-11 |
DE112005001713B4 (de) | 2012-04-12 |
DE112005001713T5 (de) | 2007-06-14 |
JP2008507416A (ja) | 2008-03-13 |
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