JP4748884B2 - レベルシフタ - Google Patents

レベルシフタ Download PDF

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Publication number
JP4748884B2
JP4748884B2 JP2001187689A JP2001187689A JP4748884B2 JP 4748884 B2 JP4748884 B2 JP 4748884B2 JP 2001187689 A JP2001187689 A JP 2001187689A JP 2001187689 A JP2001187689 A JP 2001187689A JP 4748884 B2 JP4748884 B2 JP 4748884B2
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JP
Japan
Prior art keywords
transistor
signal
source
input
current
Prior art date
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Expired - Fee Related
Application number
JP2001187689A
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English (en)
Japanese (ja)
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JP2002118458A5 (enExample
JP2002118458A (ja
Inventor
潤 小山
宗広 浅見
豊 塩野入
知昭 熱海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001187689A priority Critical patent/JP4748884B2/ja
Publication of JP2002118458A publication Critical patent/JP2002118458A/ja
Publication of JP2002118458A5 publication Critical patent/JP2002118458A5/ja
Application granted granted Critical
Publication of JP4748884B2 publication Critical patent/JP4748884B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001187689A 2000-06-27 2001-06-21 レベルシフタ Expired - Fee Related JP4748884B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001187689A JP4748884B2 (ja) 2000-06-27 2001-06-21 レベルシフタ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000193498 2000-06-27
JP2000-193498 2000-06-27
JP2000193498 2000-06-27
JP2001187689A JP4748884B2 (ja) 2000-06-27 2001-06-21 レベルシフタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011102946A Division JP5386536B2 (ja) 2000-06-27 2011-05-02 半導体装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2002118458A JP2002118458A (ja) 2002-04-19
JP2002118458A5 JP2002118458A5 (enExample) 2008-08-21
JP4748884B2 true JP4748884B2 (ja) 2011-08-17

Family

ID=26594809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001187689A Expired - Fee Related JP4748884B2 (ja) 2000-06-27 2001-06-21 レベルシフタ

Country Status (1)

Country Link
JP (1) JP4748884B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI277057B (en) 2000-10-23 2007-03-21 Semiconductor Energy Lab Display device
US6927753B2 (en) 2000-11-07 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4087229B2 (ja) * 2002-03-11 2008-05-21 三菱電機株式会社 振幅変換回路およびそれを用いた半導体装置
JP4440100B2 (ja) 2002-12-13 2010-03-24 株式会社半導体エネルギー研究所 半導体装置
JP4573544B2 (ja) * 2004-03-09 2010-11-04 三菱電機株式会社 表示装置
JP4800781B2 (ja) * 2006-01-31 2011-10-26 セイコーインスツル株式会社 電圧レベルシフト回路、および半導体集積回路
US7443202B2 (en) 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
JP2014195241A (ja) * 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
CN112860001B (zh) * 2021-01-19 2022-04-29 烽火通信科技股份有限公司 一种快速电流镜电路
CN119380647A (zh) * 2023-07-26 2025-01-28 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
US12333986B2 (en) 2023-07-26 2025-06-17 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panels and display devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103215A (ja) * 1990-08-23 1992-04-06 Toshiba Corp 半導体集積回路の入力回路
JP3144166B2 (ja) * 1992-11-25 2001-03-12 ソニー株式会社 低振幅入力レベル変換回路
JPH09294062A (ja) * 1996-04-25 1997-11-11 Seiko Epson Corp 入力回路
JPH11214979A (ja) * 1998-01-28 1999-08-06 Hitachi Ltd 半導体集積回路
JP3174027B2 (ja) * 1998-04-23 2001-06-11 松下電器産業株式会社 信号レベル変換回路
JPH11355122A (ja) * 1998-06-09 1999-12-24 Mitsubishi Electric Corp 半導体装置の入力バッファ

Also Published As

Publication number Publication date
JP2002118458A (ja) 2002-04-19

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